CN102356211B - Backfilled polycrystalline diamond cutter with high thermal conductivity - Google Patents
Backfilled polycrystalline diamond cutter with high thermal conductivity Download PDFInfo
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- CN102356211B CN102356211B CN201080012177.3A CN201080012177A CN102356211B CN 102356211 B CN102356211 B CN 102356211B CN 201080012177 A CN201080012177 A CN 201080012177A CN 102356211 B CN102356211 B CN 102356211B
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- 239000010432 diamond Substances 0.000 title claims abstract description 156
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 156
- 239000000463 material Substances 0.000 claims abstract description 150
- 239000003054 catalyst Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000011230 binding agent Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 57
- 238000002386 leaching Methods 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 18
- 238000005245 sintering Methods 0.000 claims description 12
- 239000011800 void material Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052582 BN Inorganic materials 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 229910052580 B4C Inorganic materials 0.000 claims description 5
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910034327 TiC Inorganic materials 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 239000002253 acid Substances 0.000 abstract description 6
- 239000010941 cobalt Substances 0.000 description 36
- 229910017052 cobalt Inorganic materials 0.000 description 36
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 36
- 238000012545 processing Methods 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 5
- 229910001573 adamantine Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003426 co-catalyst Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000005213 imbibition Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000010813 municipal solid waste Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910001338 liquidmetal Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002490 spark plasma sintering Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910001430 chromium ion Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000003863 metallic catalyst Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 210000001138 tear Anatomy 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4572—Partial coating or impregnation of the surface of the substrate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
- C04B35/528—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B10/00—Drill bits
- E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
- E21B10/56—Button-type inserts
- E21B10/567—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/427—Diamond
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
- C22C2026/003—Cubic boron nitrides only
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
- C22C2026/006—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes with additional metal compounds being carbides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
- C22C2026/008—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes with additional metal compounds other than carbides, borides or nitrides
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Geology (AREA)
- Structural Engineering (AREA)
- Mechanical Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Environmental & Geological Engineering (AREA)
- Physics & Mathematics (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Metallurgy (AREA)
- Fluid Mechanics (AREA)
- Earth Drilling (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Catalysts (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
A front face of a diamond table mounted to a substrate is processed, for example through an acid leach, to remove interstitial catalyst binder and form a thermal channel. A material is then introduced to the front face of the diamond table, the introduced material backfilling the front face of the diamond table to fill interstitial voids left by removal of the catalyst binder in the thermal channel to a desired depth. The material is selected to be less thermally expandable than the catalyst binder and/or more thermally conductive than the catalyst binder and/or having a lower heat capacity than the catalyst binder.
Description
Priority request
The application requires the rights and interests of Application No. 12/716,208 of submitting on March 2nd, 2010, and this patent application requires the priority of the U.S. Provisional Patent Application submitted on March 27th, 2009 number 61/164,155, and it is disclosed in this and is merged in by reference.
Technical field
Present invention relates in general to polycrystalline diamond cutters (gauge glass cutter, diamond cutter).
Background of invention
Polycrystalline diamond cutters, also referred to as polycrystalline diamond composite sheet (Polycrystalline Diamond Compacts) (PDCs), by the diamond synthesizing or natural diamond crystal,---it is fixed in the substrate of being made up of tungsten carbide---makes.Sintering process for the manufacture of these devices is started by high-quality cutting level (saw-grade) diamond crystal conventionally.The liquid metal synthetic catalyst---modal is cobalt---that diamond crystal is served as to adhesive in existence, under the pressure of the temperature of about 1400 DEG C and about 61 kilobars (kbar), be sintered together.Can use other catalyzer, comprise that element (and alloy of group VIII metal), silicon and other alloy from group VIII metal is as magnesium carbonate.The temperature of 1400 DEG C keeps about 5 to 10 minutes conventionally.Then by system cools and last decompression.Rate of pressure rise (pressure rate), the rate of heat addition and cooldown rate depend on the device type (belt or cubic hinge press (cubic press)) of use, the concrete catalyzer using and the cutting grade diamond crystal of use.Conventionally, during identical high temperature, HIGH PRESSURE TREATMENT, diamond is adhered to tungsten carbide substrate.
Be well known that, PDC cutter weares and teares according to three kinds of different modes, its sign of temperature by cutter spike (referring to, Ortega and Glowka, " Studies of the Frictional Heating of Polycrystalline Diamond Compact Drag Tools During Rock Cutting, " June 1982; And Ortega and Glowka, " Frictional Heating and Convective Cooling of Polycrystalline Diamond Drag Tools During Rock Cutting, " Soc.of Petr.Eng.Journal, April 1984; It is disclosed in this and is merged in by reference).Below 750 DEG C, main abrasive manner is the microchipping of sintered diamond (micro-chipping).More than 750 DEG C, abrasive manner becomes more serious wear form from the microchipping of each diamond particles.This more serious wear form is caused by following reason: 1) along the stress of diamond crystals boundary (diamond grain boundary), it is caused by differentiated thermal expansion between diamond and kish field trash, with 2) along with approaching 800 DEG C, the chemical reaction of diamond and cobalt makes diamond become graphite again.
Prior art instruction by utilize acid attack by Co catalysts from PDC diamond table be removed to be less than 100 μ m or perhaps between 100 to 200 μ m or more than the degree of depth extend the method for cutter life.Acid goes out the cobalt in substantially all gaps to the degree of depth of expecting, leaving gap opening from the surperficial leaching of diamond layer.This processing suppresses the possibility of differentiated thermal expansion between diamond and catalyst metals, and at least increases thermal diffusion coefficient in the region of the leaching degree of depth from diamond table front surface.These products are known to those skilled in the art as the PDC of leaching, and the PDC of their more non-leachings has the improvement in performance of industry approved.The acid that Leaching process needs can be harsh and be difficult to safety operation.
The cutter that the PDC cutter of leaching has been considered to more non-leaching has improved performance, because following reason:
First: be arranged in along the passage of heat cobalt very close to each other of the front surface of diamond table and improve the heat transfer to drilling fluids, stride across the heat transfer on diamond table surface, and the heat transfer to cutter inside to the existence of diamond combination by diamond.Contribute to make the temperature of cutter spike to remain on below critical-temperature along the heat transfer of the passage of heat, exceed this critical-temperature because diamond is cracked, will be destroyed.This is owing to lacking remarkable differentiated thermal conductivity characteristic (annotation: adamantine thermal conductivity is 2000W m at least partly
-1k
-1, by comparison, the thermal conductivity of cobalt is 60W m
-1k
-1).In addition, although cobalt has been removed and by the space in the cutter gap of leaching substitute, the thermal scattering that space but (it also has poor thermal scattering characteristic) is combined with diamond to striding across diamond, that while existence compared with the cobalt in gap, experiences presents the less interference of generation.This cutting performance of cutter more non-leaching of having explained to a certain extent why leaching is better.
Second: the region that cobalt has been removed does not present the bond fission that caused by cobalt thermal expansion.This is owing to lacking remarkable differentiated thermal expansion character (annotation: the coefficient of thermal expansion of cobalt is 13 μ m m at least partly
-1k
-1, by comparison, adamantine coefficient of thermal expansion is 1 μ m m
-1k
-1).According to common practise, this second point has been the successful key reason of PDC cutter of leaching.
The 3rd, be positioned at along the thermal capacitance reduction of the passage of heat of diamond table front surface, this causes the substance of thermal diffusion coefficient to improve.
Although the advantage of the cutting-tool engineering of aforementioned and leaching, existence needs are improved to the PDC cutter by the leaching with better thermal property is provided in this area.
With reference to following prior art file: U.S. Patent number 4,016,736; 4,124,401; 4,184,079; 4,605,343; 4,940,180; 5,078,551; 5,609,926; 5,769,986; 5,857,889; 6,779,951; 6,887,144 and 7,635,035; Disclosed PCT application WO 01/79583; Wang, " A Study on the Oxidation Resistance of Sintered Polycrystalline Diamond with Dopants, " Science and Technology of New Diamond, pp 437-439,1990; Salvadori, " Metal Ion Mixing in Diamond, " Surface and Coatings Technology, June 2000, p.375; Pu, " The Application of Ion Beam Implantation for Synthetic Diamond Surface Modification, " IEEE Int.Conf.on Plasma Science, 1197; Weishart, " N-type Conductivity in High-fluence Si-implanted Diamond, " Journal of Applied Physics, vol.97, issue 10,2005; Vankar, " Ion Irradiation Effects in Diamond and Diamond Like Carbon Thin Films, " 1995; Dearnaley, " The Modification of Material by Ion Implantation, " Physics in Technology 14,1983; Stock, " Characterization and Mechanical Properties of Ion-implanted Diamond Surfaces, " Surface and Coatings Technology, vols.146-147,2001; " Modification of Diamond Single Crystals by Chromium Ion Implantation with Sacrificial Layers, " Analytical and Bioanalytical Chemistry, vol.374, nos.7-8,2002; It is disclosed in this and is merged in by reference.
Summary of the invention
The inventor thinks that the major defect of current available PDC cutter is not because cobalt is with respect to the inconsistent hot expansion property of diamond, shows the heat conductivity away from the difference of diamond spike on work plane but---even have the diamond table of leaching---due to the fact that PDC cutter.According to the present invention, being constructed or processing---especially along the work plane (along the passage of heat) before diamond table---to significantly improve the cutter of thermal conductivity, will not only surpass conventional PDC cutter, and surpasses the PDC cutter of leaching.The thermal conductivity improving reduces following dangerous: 1) along the stress of diamond crystals boundary, it causes by differentiated thermal expansion between diamond and kish field trash, and 2) chemical reaction of diamond and cobalt makes diamond become graphite again.
According to embodiment, be provided for being created on the method for the heat-staple diamond table using in PDC cutter.The method comprises the thermal conductivity that increases diamond table by backfill PDC cutter, and wherein synthesis catalyst material (as cobalt) has been removed to the degree of depth of expectation, has the inflatable and/or more thermal conductivity of less heat and/or lower thermal capacitance material.In other words inflatable and/or more thermal conductivity and/or the lower thermal capacitance material of less heat, providing filled the interstitial void being stayed by the catalyst material of removing in diamond table to the degree of depth of expecting along front surface.The degree of depth of expectation above-mentioned can be, for example, and between 0.010mm to 1.0mm.
Material material standed for for the application is cubic boron nitride (cubic boron nitide), and it has the 200W of being greater than m
-1k
-1thermal conductivity (referring to, Nature volume 337, January 26,1989) and 1.2 μ m m
-1k
-1coefficient of thermal expansion.These values are advantageously comparable to adamantine thermal property compatible with it, and it is better can to implement the value that obtains according to the cutter of prior art leaching.
Other element material material standed for for the application comprises: carbon, germanium, zinc, aluminium, silicon, molybdenum, boron, phosphorus, copper, silver and golden.Can use the combination of these elements and other element and comprise one or more the alloy in these elements.In addition, the thermal property of these material material standed fors is better than in the cutter of leaching the gap catalyzer or the interstitial void that exist.
Material selectively comprises: alkaline earth carbonate, sulfate, hydroxide, tungsten oxide, boron carbide, titanium carbide, ferriferous oxide, double oxide (double oxides), intermetallic compound and pottery.
Can other suitable method micronize or the material selected of preparation this method to be applied to the front surface of target diamond table.Then process, it causes that the material of selection moves into diamond table, fills at least partly the interstitial void (lattice voids, interstitial voids) being stayed by the Co catalysts of removing gap.Relevant with this process, some residual gap synthesis catalyst materials (as cobalt) can be replaced at least in part.In any case, compare with enforcement non-leaching with prior art leaching, form the passage of heat of the thermal property (as conductibility or expansion or thermal capacitance) with raising along the existence of the material in the diamond table of front surface.This passage of heat provides away from the better hot possibility of conducting and reducing diamond destruction in cutter operating period diamond table of cutter spike.
In one embodiment, comprise imbibition processing for realizing the processing that material is incorporated into diamond table.
In another embodiment, comprise that for realizing the processing that material is incorporated into diamond table high temperature insostatic pressing (HIP) (HIPing) processes.
In another embodiment, comprise and colding pressing or K cryogenic treatment (cryogenic treatment) or the two combination for realizing the processing that material is incorporated into diamond table.
In another embodiment, comprise discharge plasma sintering (spark plasma sintering) for realizing the processing that material is incorporated into diamond table.
Multiple technologies can be used for material to be applied to the front surface of target diamond table, comprising: the chemical vapour deposition (CVD) that paint painting, coating, immersion, dipping, plasma gas phase deposition, chemical vapour deposition (CVD) and plasma strengthen.Other technology is known to one skilled in the art.Recognize, can assist in addition and simultaneously implementation material to move into diamond table for some technology that material are applied to diamond table front surface.For example, above-described deposition technique, can combine with Cement Composite Treated by Plasma and selective heating, can cause and move into diamond table to fill at least partly the interstitial void staying by approaching the synthesis catalyst material (as cobalt) that is removed in the surf zone of diamond table.
Under suitable energy level, utilize ion implantation, this material can be applied alternatively and insert.In the method, the front surface that the dopant species (for example, boron) of selecting is injected into target diamond table is to certain depth.Subsequently and optional annealing process can be used for making the dopant species injected to be diffused into the case depth of increase and/or for eliminating the defect of the diamond crystal structures being caused by injection method.
To further understand, other machinery or chemical transfer method or process can be alternatively for inject or move the inflatable and/or high conductivity material of less heat with the diamond table of backfill leaching the object to the degree of depth of expectation.
It is also understood that, process described herein and technology not only can be applicable to the cutter of the diamond table with the substrate of being fixed to, and can be applicable to stand alone type (free-standing) diamond table main body (it can be fixed to substrate subsequently as tungsten carbide).
Accompanying drawing summary
The PDC cutter of Fig. 1 illustration conventional configurations;
The PDC cutter of the conventional configurations of Fig. 2 illustration leaching;
Compared with the cutter of Fig. 3 illustration and Fig. 1 and 2, there is the PDC cutter of the thermal property of raising;
Figure 4 and 5 illustration is applied to the thermal property material of improvement in the pattern of tool surface;
Fig. 6 illustration is applied to cutter according to manufacture method by coating material;
The enforcement of the treatment step in Fig. 7 illustration method; With
Fig. 8 illustration K cryogenic treatment mechanism and process.
Accompanying drawing describes in detail
With reference to figure 1, illustrate the PDC cutter 10 of conventional configurations.Be noted that Fig. 1 does not draw with any special ratios.This cutter comprises the diamond table 12 that is fixed to substrate 14.Diamond table 12 is formed by the diamond crystal (by " x " instruction) being sintered together under high pressure and high temperature under liquid metal catalyst (by " " instruction)---modal is cobalt---existence." x " and " " represents is the example of character, not represent the real crystal structure of explanation diamond table, but show that the cobalt binder " " in diamond crystal " x " and gap exists (cobalt content can be changed to 12% from 3) in the distribution of whole diamond table 12.Substrate 14 is formed by tungsten carbide conventionally.Recognize, comprising substrate 14 is optional (,, if needed, diamond table can be free-standing main body).
In the time that PDC cutter 10 uses in cutting application, the significant heat of its experience exposes.Modal, heat produces at the diamond edge of table (on work plane) cutting.The heat radiation being produced by cutting action is through diamond table 12 and perhaps arrive substrate 14.At elevated temperatures, due to other cracked with relevant to the ill-effect of diamond table structure to heat destruction, diamond table 12 starts to destroy.
In order to address this problem, prior art instruction utilizes cobalt that acid attack removes gap from PDC diamond table to the degree of depth that is less than 100 μ m, or perhaps between 100 to 200 μ m or more than the degree of depth.The cobalt that acid attack goes out substantially all gaps from diamond layer surface leaching is to the degree of depth of expecting.The PDC cutter 10 of the leaching of conventional configurations carries out illustration in Fig. 2.Be noted that in addition Fig. 2 does not draw with special ratios.But, should be realized that, the result of leaching operation is the metallic catalyst (by " " instruction) that the end face (work plane) that approaches diamond table 12 lacks gap.The leaching degree of depth 16 limits the passage of heat 18, does not seriously suffer known thermal property difference between the diamond of the passage of heat 18 and cobalt, has therefore shown the performance that provides superior compared with the conventional PDC cutter showing in Fig. 1.
The invention provides the PDC cutter with the passage of heat, its thermal property is better than the PDC cutter of Fig. 2 leaching.The present invention further provides the method for manufacturing this PDC cutter with the improved passage of heat.The thermal conductivity improving has reduced following risk: 1) along the stress of diamond crystals boundary, it causes by differentiated thermal expansion between diamond and kish field trash, and/or 2) chemical reaction of diamond and cobalt makes diamond become graphite again.
With reference to figure 3, PDC cutter 20 according to the present invention comprises the diamond table 22 that is fixed to substrate 24.Diamond table 22 is formed by the diamond crystal being sintered together under high pressure and high temperature under the existence liquid metal catalyst (by " " instruction)---modal is cobalt---(by " x " instruction)." x " and " " expression is the example of character, not represents the real crystal structure of explanation diamond table, but shows that the distribution of the cobalt " " adhesive in the interior diamond crystal " x " of diamond table and gap exists.Substrate 24 is formed by tungsten carbide conventionally, and is optional (,, if needed, diamond table can be free-standing main body).
Relevant to its work plane, PDC cutter 20 further comprises the passage of heat 28, in this passage of heat, exist the inflatable and/or more thermal conductivity of less heat and/or lower thermal capacitance material (by "
*" instruction, and be referred to herein as " material ").As shown in Figure 2, starting point is the PDC cutter of leaching, material (by "
*" instruction) be introduced into, for example synthesize the Co catalysts material interstitial void that stay to desired depth 26 with backfill by removing by covering, inject, move and/or be implanted to front surface." x ", " " and "
*" represent it is the example of character, not represent the real crystal structure of explanation diamond table, but show with respect to material in the passage of heat 28 of the diamond crystal " x " of diamond table 22 and the cobalt " " adhesive in gap "
*" the existence of distribution.The passage of heat 28 is limited by the degree of depth 26, and material (work) face or end face from diamond table extend to the degree of depth 26.Existence to the material of the degree of depth 26 provides the passage of heat 28, and Fig. 2 passage 18 only providing by go out the cobalt in gap from diamond table leaching is provided its thermal property.The thermal conductivity improving in passage 28 has reduced following risk: 1) along the stress of diamond crystals boundary, it causes by differentiated thermal expansion between diamond and kish field trash, and/or 2) chemical reaction of diamond and cobalt makes diamond become graphite again.
Material in the application, for example, replaces the cobalt binder of 26 leachings from diamond table to the degree of depth.The degree of depth 26 can be, for example, and the scope of 0.010mm to 1.0mm.
Therefore, the thermal diffusion coefficient of the passage of heat 28 ratio of heat capacity of volume (thermal conductivity with) increases.This can be by the molecule of increase ratio (for example, by thering is the existence of material of high thermal conductivity) or reduce the denominator (for example,, by thering is the existence of material of lower specific heat capacity) of ratio or increase molecule and reduce denominator that the two combines to realize.Be noted that leaching goes out cobalt binder and causes that thermal conductivity increases approximately 2%, and thermal capacitance declines approximately 63%, cause the overall increase approximately 43% of diffusion coefficient.This illustrates the advantage of the diamond table (referring to, Fig. 2) of leaching to a certain extent.As discussed above, the further raising (increase) of diffusion coefficient is provided provide with the cutter of material backfill leaching, and the material of wherein selecting contributes to effectively to increase the molecule of thermal diffusion coefficient ratio and/or the denominator of reduction thermal diffusion coefficient ratio about the passage of heat 28.
This material can provide (referring to, Fig. 4) on the whole end face (front surface) of diamond table 22, or on diamond table 22 end faces (front surface), provides (referring to, Fig. 5) according to the pattern of expecting.The pattern of selecting for material clip foreign material can more effectively assist and be striden across diamond table work plane from cutting spike and carry out passage heat conduction (guiding hot, channeling heat).By applying conventional stamping technique (masking techniques), can provide and limit this pattern.In an illustrative embodiments, material is provided with the pattern shown in Fig. 5, and this pattern comprises the region of multiple radiated entends, and these regions comprise the material that is backfilling into desired depth.
Material material standed for for the application is cubic boron nitride, and it has the 200W of being greater than m
-1k
-1thermal conductivity (referring to, Nature, rolls up on January 26th, 337,1989) and 1.2 μ m m
-1k
-1coefficient of thermal expansion.These thermal propertys are comparable to adamantine thermal property compatible with it, and are the improvement (it will be suitable in the leaching cobalt cutter of Fig. 2) that exceedes interstitial void thermal property.Use according to cubic boron nitride as coating or cladding material, to make the passage of heat 28 heat and mechanical performance improve, this material supports composition material boron to inject, move and/or be incorporated into interstitial void that diamond table stays by leaching synthesis catalyst material (as cobalt) with the backfill degree of depth to expectation.
Other element material material standed for for the application comprises: carbon, germanium, zinc, aluminium, silicon, molybdenum, boron, phosphorus, copper, silver and golden.The combination of these elements and other element and comprise that one or more the alloy in these elements can be used as material.In addition, every kind of these material all have can be comparable to adamantine thermal property and the thermal property compatible with it, if there is free unoccupied place to be included in diamond table, these materials will present the improvement (it will be suitable in the cutter of the leaching cobalt of Fig. 2) that exceedes interstitial void thermal property.
Other material material standed for for the application comprises that one or more alkaline earth carbonates are as Li alternatively
2cO
3, NaCO
3, MgCO
3, SrCO
3, K
2cO
3and similar item.
Other material material standed for for the application comprises that one or more sulfate are as Na alternatively
2sO
4, MgSO
4, CaSO
4and similar item.
Other material material standed for for the application comprises that one or more hydroxide are as Mg (OH) alternatively
2, Ca (OH)
2and similar item.
Another kind of material material standed for for the application comprises tungsten oxide (WO alternatively
3).
Another kind of material material standed for for the application comprises boron carbide (B alternatively
4c).
Another kind of material material standed for for the application comprises TiC alternatively
0.6.
Another kind of material material standed for for the application comprises that one or more ferriferous oxides or double oxide are as FeTiO alternatively
3, Fe
2siO
4, Y
3fe
5o
12, Fe
5o
12with similar item etc.
Another kind of material material standed for for the application comprises one or more intermetallic material alternatively.
Another kind of material material standed for for the application comprises one or more ceramic materialss alternatively.
Multiple diverse ways can be used for manufacturing PDC cutter 20.
In first method, the coating of material 30 (being also known as " passage of heat material ") is applied to the front surface of diamond table 22, and the catalyzed dose adhesive material of diamond table 22 leaches into the degree of depth 16 (as indicated in dotted line).This is presented in Fig. 6.Multiple technologies can be used for material to be applied to the front surface of target diamond table, comprising: the chemical vapour deposition (CVD) that paint painting, coating, immersion, dipping, plasma gas phase deposition, chemical vapour deposition (CVD) and plasma strengthen.
Then process, this processing causes that material 30 (or special component) in this material backfill goes out the space staying at the synthesis catalyst material (as cobalt) approaching in diamond table surf zone 32 by leaching, form the passage of heat 28.This is presented in Fig. 7.If need, can remove unreacted material 30.
In one embodiment, the processing of application comprises imbibition processing.Imbibition processing procedure is disclosed in disclosed U.S. Patent application 2008/0240879 and 2009/0032169, and it is disclosed in this and is merged in by reference.These imbibition processes are moved to be associated and are disclosed with realizing cobalt in tungsten carbide substrate, are also suitable but be considered to realize the degree of depth that material (or component of this material) introduced or moved to expectation from diamond table front surface.Related to this, the material of introducing (or component) in this material backfill is by the interstitial void that is approaching synthesis catalyst material (as cobalt) that the interior leaching of diamond table surf zone 32 goes out and stay.
In another embodiment, the processing of application comprises high temperature insostatic pressing (HIP) (HIPing) processing.Operation and characteristic that the known HIPing of those skilled in the art processes.This process make component in high pressure sealing container (high pressure containment vessel), stand raise temperature and etc. static air pressure (isostatic gas pressure).The temperature of this rising and etc. static air pressure be considered to that to introduce diamond table front surface be useful to realizing material (or component of this material).In the preferred embodiment of utilizing the method, tungsten carbide substrate and the part that approaches the diamond layer of tungsten carbide substrate most can be wrapped or shelter to prevent that these regions are processed, retain the processing to diamond layer work plane.The in the situation that of Co catalysts adhesive and cubic boron nitride material, in the time of the temperature standing more than 750 DEG C, under the effect of isostatic pressure, cobalt expands with the speed in the hole in permission cubic boron nitride material (or its element boron component) diffusion and filling gap.
In another embodiment, the processing of application comprises cold stamping or K cryogenic treatment.The enforcement of this processing of Fig. 8 illustration, in this processing, remains on by the diamond table front surface of material coating the period that continues selection in liquid nitrogen case, and remains in vacuum environment.The shell of heating is used for holding tungsten carbide substrate and some protections is provided, and prevents the infringement to tungsten carbide substrate and/or diamond table combination of excessive cold due to liquid nitrogen case.Low temperature and vacuum pressure are considered to promote material (or specific components) in this material to introduce diamond table front surface.In the preferred embodiment of the method, the surface that the micronised particles of material (or specific components) in this material is pressed into diamond layer by available piston mechanism enters diamond layer further to cause material (or component of this material).
In another embodiment, the processing of application comprises discharge plasma sintering or auxiliary sintering (field assisted sintering) or a pulse electric current sintering.About the details of these processes be to one skilled in the art known (referring to, for example, Shen, " Spark Plasma Sintering Assisted Diamond Formation From Carbon Nanotubes At Very Low Pressure; " 2006 Nanotechnology 17 pages 2187-2191 (2206), it is openly merged in by reference).The application of the pulse current of sintering technology causes high-speed spot heating, and this heat promotes material (or component of this material) migration to enter and fill the hole in the gap of vacating being stayed by leaching diamond table surface.
In another method, provide some materials to penetrate into diamond table for being coated with the plasma gas phase deposition, chemical vapour deposition (CVD) of diamond table front surface and chemical vapour deposition (CVD) that plasma strengthens, go out synthesis catalyst material (as cobalt) for backfill by leaching and the interstitial void that stays.Material is condensed at heating the temperature in the temperature lower than previous but more than 750 DEG C at the temperature of evaporation enough high.In the time standing to exceed the temperature of 750 DEG C, the hole in the gap that the vapor diffusion of material (or component of this material) and filling are stayed by leaching diamond table surface.
In another method, do not carry out being coated with material.Replace, the selection material because it is suitable for Implantation especially well.Preferably select boron or phosphorus (or other known p-type or n-type adulterant) as the possible material standed for for Implantation, because the use of these dopant species is well-known in semiconductor integrated circuit manufacture field.PDC cutter shown in Fig. 2 is placed on to Implantation indoor, and the ion of the Selective type that comprises this material is injected with high-energy, the synthesis catalyst material (as cobalt) going out to substitute leaching for backfill.The infringement of the diamond crystal structures that the heat treatment of can annealing after injecting is caused by injection with further diffusing, doping agent kind and/or reparation.
To further understand, other machinery or chemical transfer method or process can be alternatively for injecting or the object of the synthesis catalyst material (as cobalt) that transport materials (or component of this material) is removed with backfill.
It is also understood that, the product of method, technology and gained not only can be applicable to the cutter of the diamond table with the substrate of being fixed to, and can be applicable to free-standing diamond table main body (it can be fixed to substrate subsequently as tungsten carbide).Therefore, above-described method can only be applied to diamond table (lacking while supporting tungsten carbide substrate).
Embodiments of the present invention have been described above with example.The invention is not restricted to disclosed embodiment.
Claims (24)
1.PDC cutter, it comprises:
Substrate; With
Be fixed to the diamond table of described substrate, described diamond table comprises diamond crystal and gap catalyst binder, described diamond table further has the front surface with the passage of heat, wherein said gap catalyst binder has been removed and has formed in the described passage of heat, to comprise in addition material in addition, the more described gap of described material catalyst binder has less thermal expansion and more described gap catalyst binder has more thermal conductivity, described material is introduced into fill at least some interstitial voids that stay by removing gap catalyst binder described in the described passage of heat to the degree of depth of expecting, and
Wherein said material is selected from carbon, boron, molybdenum, cubic boron nitride, boron carbide and TiC
0.6.
2. PDC cutter according to claim 1, wherein said material is the component of cubic boron nitride or cubic boron nitride.
3. PDC cutter according to claim 1, wherein said material be in the element material listed of claim 1 two or more combination or comprise one or more one of the alloy in the element material that claim 1 lists.
4. PDC cutter according to claim 1, wherein said material is boron carbide.
5. PDC cutter according to claim 1, wherein said material is TiC
0.6.
6. PDC cutter according to claim 1, wherein said material is introduced in the described diamond table passage of heat by high temperature insostatic pressing (HIP).
7. PDC cutter according to claim 1, wherein said material is introduced in the described diamond table passage of heat by low temperature method or cold pressing method or the two combination.
8. PDC cutter according to claim 1, wherein said material is introduced in the described diamond table passage of heat by Implantation.
9. PDC cutter according to claim 1, wherein said material is introduced in the described diamond table passage of heat by one of discharge plasma sintering, an auxiliary sintering or pulse electric current sintering.
10. PDC cutter according to claim 1, the degree of depth of wherein said expectation is between 0.010mm to 1.0mm.
The 11. heat-staple diamond table methods that use for being created on PDC cutter, comprising:
Remove described gap catalyst binder to form the passage of heat from being fixed to the front surface---described diamond table comprises diamond crystal and gap catalyst binder---of diamond table of substrate; With
Material is introduced to the described front surface of described diamond table, described in described material backfill, the described front surface of diamond table is to fill the interstitial void staying by removing gap catalyst binder described in the described passage of heat to the degree of depth of expecting, the more described gap of described material catalyst binder has less thermal expansion and more described gap catalyst binder has more thermal conductivity; And
Wherein introduce described material and comprise that described material introduced the described passage of heat by the method by being selected from Implantation, discharge plasma sintering, low temperature process and cold pressing.
12. methods according to claim 11, wherein remove and comprise from gap catalyst binder described in the described front surface leaching of described diamond table.
13. methods according to claim 11, wherein said material is cubic boron nitride.
14. methods according to claim 11, wherein said material is the element material that is selected from carbon, molybdenum and boron.
15. methods according to claim 14, wherein said material be in the described element material listed of claim 14 two or more combination or comprise one or more one of the alloy in the described element material that claim 14 lists.
16. methods according to claim 11, wherein said material is boron carbide.
17. methods according to claim 11, wherein said material is TiC
0.6.
18. methods according to claim 11, wherein said material is one of ferriferous oxide or double oxide.
19. methods according to claim 11, wherein said material is intermetallic material.
20. methods according to claim 11, wherein said material is ceramic materials.
21. methods according to claim 11, wherein introduce described material and comprise and carry out chilling process or cold pressure procedure or carry out this two kinds of processes.
22. methods according to claim 11, wherein introduce described material and comprise and carry out Implantation.
23. methods according to claim 11, wherein introduce described material and comprise discharge plasma sintering.
24. methods according to claim 11, the degree of depth of wherein said expectation is between 0.010mm to 1.0mm.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16415509P | 2009-03-27 | 2009-03-27 | |
| US61/164,155 | 2009-03-27 | ||
| US12/716,208 US8662209B2 (en) | 2009-03-27 | 2010-03-02 | Backfilled polycrystalline diamond cutter with high thermal conductivity |
| US12/716,208 | 2010-03-02 | ||
| PCT/US2010/028807 WO2010111578A1 (en) | 2009-03-27 | 2010-03-26 | Backfilled polycrystalline diamond cutter with high thermal conductivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102356211A CN102356211A (en) | 2012-02-15 |
| CN102356211B true CN102356211B (en) | 2014-09-17 |
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ID=42781537
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080012177.3A Expired - Fee Related CN102356211B (en) | 2009-03-27 | 2010-03-26 | Backfilled polycrystalline diamond cutter with high thermal conductivity |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8662209B2 (en) |
| EP (1) | EP2396494A4 (en) |
| CN (1) | CN102356211B (en) |
| RU (1) | RU2521681C2 (en) |
| WO (1) | WO2010111578A1 (en) |
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- 2010-03-26 WO PCT/US2010/028807 patent/WO2010111578A1/en active Application Filing
- 2010-03-26 EP EP10756899.0A patent/EP2396494A4/en not_active Withdrawn
- 2010-03-26 CN CN201080012177.3A patent/CN102356211B/en not_active Expired - Fee Related
- 2010-03-26 RU RU2011118924/03A patent/RU2521681C2/en not_active IP Right Cessation
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| CN1906266A (en) * | 2003-12-18 | 2007-01-31 | 3M创新有限公司 | Alumina-yttria particles and methods of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010111578A1 (en) | 2010-09-30 |
| US20100243336A1 (en) | 2010-09-30 |
| US8662209B2 (en) | 2014-03-04 |
| RU2521681C2 (en) | 2014-07-10 |
| CN102356211A (en) | 2012-02-15 |
| EP2396494A4 (en) | 2016-11-02 |
| EP2396494A1 (en) | 2011-12-21 |
| RU2011118924A (en) | 2012-11-27 |
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