CN102355223B - 一种单芯片gsm射频天线开关模块及gsm射频前端 - Google Patents
一种单芯片gsm射频天线开关模块及gsm射频前端 Download PDFInfo
- Publication number
- CN102355223B CN102355223B CN201110228391.9A CN201110228391A CN102355223B CN 102355223 B CN102355223 B CN 102355223B CN 201110228391 A CN201110228391 A CN 201110228391A CN 102355223 B CN102355223 B CN 102355223B
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- Prior art keywords
- pass filter
- low pass
- radio
- inductance
- antenna switch
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- 238000010295 mobile communication Methods 0.000 title abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000001914 filtration Methods 0.000 claims abstract description 12
- 230000005669 field effect Effects 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 27
- 238000003475 lamination Methods 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- 239000003990 capacitor Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 17
- 238000003780 insertion Methods 0.000 description 11
- 230000037431 insertion Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000001105 regulatory effect Effects 0.000 description 8
- 238000003466 welding Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110228391.9A CN102355223B (zh) | 2011-08-10 | 2011-08-10 | 一种单芯片gsm射频天线开关模块及gsm射频前端 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110228391.9A CN102355223B (zh) | 2011-08-10 | 2011-08-10 | 一种单芯片gsm射频天线开关模块及gsm射频前端 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102355223A CN102355223A (zh) | 2012-02-15 |
CN102355223B true CN102355223B (zh) | 2014-08-27 |
Family
ID=45578737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110228391.9A Active CN102355223B (zh) | 2011-08-10 | 2011-08-10 | 一种单芯片gsm射频天线开关模块及gsm射频前端 |
Country Status (1)
Country | Link |
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CN (1) | CN102355223B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110299618B (zh) | 2014-01-23 | 2022-09-30 | 荣耀终端有限公司 | 一种天线系统以及终端 |
CN103825571B (zh) * | 2014-03-05 | 2017-04-05 | 锐迪科创微电子(北京)有限公司 | 实现阻抗匹配的射频天线开关电路 |
CN103973291B (zh) | 2014-04-22 | 2017-02-01 | 华为技术有限公司 | 射频天线开关 |
CN104467776A (zh) * | 2014-11-18 | 2015-03-25 | 锐迪科创微电子(北京)有限公司 | 一种单芯片射频天线开关模块及射频前端 |
US9565768B2 (en) * | 2015-03-25 | 2017-02-07 | Infineon Technologies Americas Corp. | Semiconductor package with integrated output inductor on a printed circuit board |
CN105514094A (zh) * | 2016-01-29 | 2016-04-20 | 宜确半导体(苏州)有限公司 | 一种射频天线开关芯片 |
CN109241578B (zh) * | 2018-08-14 | 2023-04-07 | 上海东软载波微电子有限公司 | 低通滤波器设计方法及装置 |
CN111294067B (zh) * | 2020-01-16 | 2022-07-12 | 上海闻泰信息技术有限公司 | 分集接收模组、辐射杂散的处理方法及电子设备 |
CN112367057A (zh) * | 2020-11-09 | 2021-02-12 | 中国科学院微电子研究所 | 一种复合结构跳频滤波器及其调节方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1282139A (zh) * | 1999-07-22 | 2001-01-31 | 摩托罗拉公司 | 基于存储器的放大器负载调整系统 |
CN101847627A (zh) * | 2010-05-31 | 2010-09-29 | 锐迪科科技有限公司 | 集成无源器件的半导体芯片及功率放大器器件 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006121736A (ja) * | 2002-10-25 | 2006-05-11 | Hitachi Metals Ltd | 高周波部品及び高周波モジュール並びにこれらを用いた通信機 |
JP4892253B2 (ja) * | 2006-02-28 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 電子装置 |
-
2011
- 2011-08-10 CN CN201110228391.9A patent/CN102355223B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1282139A (zh) * | 1999-07-22 | 2001-01-31 | 摩托罗拉公司 | 基于存储器的放大器负载调整系统 |
CN101847627A (zh) * | 2010-05-31 | 2010-09-29 | 锐迪科科技有限公司 | 集成无源器件的半导体芯片及功率放大器器件 |
Non-Patent Citations (1)
Title |
---|
JP特开2006-121736A 2006.05.11 |
Also Published As
Publication number | Publication date |
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CN102355223A (zh) | 2012-02-15 |
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Effective date of registration: 20181106 Address after: 201203 Building 1, exhibition hall, 2288 lane, 2288 Chong, road, Zhangjiang hi tech park, Shanghai Patentee after: SPREADTRUM COMMUNICATIONS (SHANGHAI) Co.,Ltd. Address before: 100086 Beijing Haidian District Zhichun Road 113 silver net center A block 1105-1108 Patentee before: RDA MICROELECTRONICS (BEIJING) Co.,Ltd. |
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Effective date of registration: 20190326 Address after: 361006 Xiamen Free Trade Pilot Area, Xiamen, Fujian Province, Unit X, 8th Floor, Unit 05, Building D, Xiamen International Shipping Center, 97 Xiangyu Road, Xiamen Section Patentee after: Xinxin Finance Leasing (Xiamen) Co.,Ltd. Address before: 201203 Building 1, exhibition hall, 2288 lane, 2288 Chong, road, Zhangjiang hi tech park, Shanghai Patentee before: SPREADTRUM COMMUNICATIONS (SHANGHAI) Co.,Ltd. |
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Application publication date: 20120215 Assignee: SPREADTRUM COMMUNICATIONS (SHANGHAI) Co.,Ltd. Assignor: Xinxin Finance Leasing (Xiamen) Co.,Ltd. Contract record no.: X2021110000009 Denomination of invention: A single chip GSM RF antenna switch module and GSM RF front end Granted publication date: 20140827 License type: Exclusive License Record date: 20210317 |
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Effective date of registration: 20221019 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech park, Spreadtrum Center Building 1, Lane 2288 Patentee after: SPREADTRUM COMMUNICATIONS (SHANGHAI) Co.,Ltd. Address before: 361006 Xiamen Free Trade Pilot Area, Xiamen, Fujian Province, Unit X, 8th Floor, Unit 05, Building D, Xiamen International Shipping Center, 97 Xiangyu Road, Xiamen Section Patentee before: Xinxin Finance Leasing (Xiamen) Co.,Ltd. |
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