CN102354907B - Multi-wavelength integrated infrared semiconductor laser light source - Google Patents
Multi-wavelength integrated infrared semiconductor laser light source Download PDFInfo
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- CN102354907B CN102354907B CN 201110280621 CN201110280621A CN102354907B CN 102354907 B CN102354907 B CN 102354907B CN 201110280621 CN201110280621 CN 201110280621 CN 201110280621 A CN201110280621 A CN 201110280621A CN 102354907 B CN102354907 B CN 102354907B
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Abstract
The invention relates to a multi-wavelength integrated infrared semiconductor laser light source, which structurally comprises a coding control module 1, an integrated driving power supply 2, an integrated laser emission unit 3, a rotational positioning transmitting objective lens group 4 and a stepped motor driving system 5. The laser light source has the four emission wavelengths of 0.865 mu m, 0.9 mu m, 1.06 mu m and 1.55 mu m and frequency characteristics, and is mainly characterized in that: the high integration of a plurality of infrared wavelength laser light source transmission units is realized by adopting a novel laser diode (LD)/light-emitting diode (LED) machining process, so the configuration of different wavelength infrared semiconductor laser light sources is reduced, a laser transmitter has a smaller volume, a lighter weight and lower cost and is more convenient to operate, and the user requirements of practical work such as comprehensive photoelectric detection, photoelectric equipment acceptance and the like are met. The laser light source has high integration and automation degrees, high transmission efficiency, convenience of online detection, high universality and high cost performance.
Description
Technical field
The present invention relates to a kind of semiconductor laser light resource, specifically a kind of Multi-wavelength integrated infrared semiconductor laser light source.
Background technology
Infrared semiconductor laser light source is a kind of important photoelectric instrument that is widely used in the engineering fields such as laser ranging, laser guidance, optical fiber communication and laser pick-off Performance Detection.Wherein, be the application that the adapts to current continuous expansion demand to the different infrared semiconductor laser light source of performance, the laser that has multiple different emission and spectral characteristic becomes an important research direction of infrared semiconductor laser light source gradually.Development multiple wavelength laser light source most important key technical problem is integration, namely how to realize luminescent device, driver module, optical system and mechanical-optical setup integrated of different LASER Light Source.
Though have the multiwavelength laser transmitting illuminant to succeed in developing at present, not yet realize aspect multi-wavelength generating device and the driver module thereof integrated.In these multiwavelength laser transmitting illuminants, for different luminescent devices, be mostly that the mode that adopts apportion to install is solidified, the mode by the internal optics system, coupled is switched realizes the integrated of transmitting illuminant.So just caused inevitably multiple wavelength laser light source to have that volume mass is large, light path is complicated and emission effciency and the low inferior problem of launch accuracy.
In order to reach the purpose of being convenient to modulate and optimize mechanical-optical setup, existing laser transmitter normally adopts the electroluminescent devices such as LD, LED as transmitting illuminant.Therefore, realize that the multi-wavelength of LD, LED luminescent device is integrated, become the key that addresses the above problem, further improves the integrated of multi-wavelength infrared semiconductor laser light source and synthesization degree.And realize the integrated key problem of multi-wavelength is how to solve on the diverse location of same substrate, the semiconductor epitaxial layers of growth different materials and thickness (emission wavelength, luminous focal plane), and how to avoid multi-wavelength emission from the problem of axle.
Summary of the invention
Purpose of the present invention just provides a kind of Multi-wavelength integrated infrared semiconductor laser light source, to solve the low and emission of launch accuracy that existing multiple wavelength laser light source exists from the problem of axle.
The present invention is achieved in that a kind of Multi-wavelength integrated infrared semiconductor laser light source, includes:
Coding control module, join with integrated driving power, for the different coding signal that sends to described integrated driving power corresponding to four road LD/LED transmitting illuminants, for above-mentioned Multi-wavelength integrated infrared semiconductor laser light source provides required laser light field information;
Integrated driving power, join with described coding control module and integrated laser transmitter unit respectively, be used for sending the required driving current signal of a certain road LD/LED transmitting illuminant work in four road LD/LED transmitting illuminants according to the code signal that receives to the integrated laser transmitter unit;
The integrated laser transmitter unit joins with described integrated driving power and rotational positioning transmitting objective lens group respectively, is used for according to the driving current signal that receives, and the road LD/LED transmitting illuminant that drives in four road LD/LED transmitting illuminants gives off laser beam; In described integrated laser transmitter unit, comprise have 0.86 μ m, 0.9 μ m, four road LD/LED transmitting illuminants of 1.06 μ m and four kinds of infrared wavelengths of 1.55 μ m;
Rotational positioning transmitting objective lens group is joined with described integrated laser transmitter unit and driving system of stepping motor respectively, and the laser beam datum that is used for each road LD/LED transmitting illuminant of described integrated laser transmitter unit is launched is collimated light beam; And
Driving system of stepping motor joins with described rotational positioning transmitting objective lens group, is used for controlling described rotational positioning transmitting objective lens group rotation and navigates to the road LD/LED transmitting illuminant that described integrated laser transmitter unit is worked.
Described coding control module comprises and is solidified with the FPGA integrated chip that comprises four road LD/LED transmitting illuminant coded messages and joins with described FPGA integrated chip and the interface circuit of outupt coded signal.This coding control module is a kind of four road transmitting illuminant coding controllers based on fpga chip, be respectively four road LD/LED transmitting illuminants Transistor-Transistor Logic level is provided, through a shared interface circuit, control logic is input to integrated driving power, thereby reaches the purpose of control LASER Light Source output pulse width.
Described integrated laser transmitter unit is to utilize MOCVD technique to grow semiconductor epitaxial layers as four road LD/LED transmitting illuminants in four sides of GaN square substrate; Described GaN square substrate and described semiconductor epitaxial layers are embedded in the center of laser emission element encapsulating structure, and the light-emitting area of described semiconductor epitaxial layers is positioned on the position of optical focal plane.The growth thickness of each semiconductor epitaxial layers on the described GaN square substrate, can realize accurate control according to the geometrical model of integrated laser transmitter unit, thereby the light-emitting area that makes each semiconductor epitaxial layers is positioned on the focal plane position of optical system, to guarantee that the transmitting objective lens group is to the collimation effect of the laser beam of the various infrared wavelengths launched.
Be provided with four control signal ends and four LASER Light Source feeder ears corresponding to four road LD/LED transmitting illuminants at described integrated driving power; Described control signal end is connected with described coding control module respectively, and described four LASER Light Source feeder ears are connected on four semiconductor epitaxial layers on the described GaN square substrate.Integrated driving power is a kind of integrated drive current source of the partial pressure type that boosts with any adjustable function of electric current, it realizes wide voltage (5-15V) boosting to high voltage (60-120V) by the single core of a slice chip that boosts, then realize continuously adjustable dividing potential drop based on the Digital PWM mode, the LD/LED semiconductor epitaxial layers that requires for four kinds of different threshold values provides work required drive current.
Described rotational positioning transmitting objective lens group comprises base, be arranged on the described base front surface eccentric position and the light beam of four road LD/LED transmitting illuminants is all had the transmitting objective lens of good emission collimation effect and is connected to assembly pulley on four jiaos of the described base back surface; Described assembly pulley joins by transmission mechanism and described driving system of stepping motor.Stepping locate mode transmitting objective lens group is the transmitting objective lens system that a kind of laser beam of 0.865 μ m, 0.9 μ m, 1.06 μ m and the four kinds of infrared wavelengths of 1.55 μ m that four road LD/LED transmitting illuminants are launched all has good emission collimation effect.This transmitting objective lens system links to each other with stepping motor with conveyer belt by the assembly pulley of base back surface, can realize the rotation on 360 ° on plane.Thus so that rotational positioning transmitting objective lens group can guarantee the alignment of four road LD/LED transmitting illuminant institute Emission Lasers light beams on GaN square substrate diverse location, thereby satisfied the required precision of multi-wavelength integrated laser light source.The present invention is by being arranged on the pulley mechanism of base back surface, utilize the step motor control transmitting objective lens, can rotate respectively to the utilizing emitted light shaft position of four road LD/LED transmitting illuminants (i.e. four semiconductor epitaxial layers), thereby the emission that has solved well the multiwavelength laser light beam is from the axle problem.
The present invention has 0.865 μ m(LED), 0.9 μ m, 1.06 μ m and four kinds of emission wavelengths of 1.55 μ m and frequency characteristic, its main feature is by adopting new LD/LED processing technology, the height of having realized multiple infrared wavelength LASER Light Source transmitter unit is integrated, both reduced the configuration of different wave length infrared semiconductor laser light source, can make again the volume of laser transmitter less, weight is lighter, cost is cheaper, more convenient to operate, satisfied the use needs of the real works such as comprehensive Photoelectric Detection and optoelectronic device examination.Characteristics of the present invention are that the integrated and automaticity of emission wavelength, drive circuit and optical system is high, and emission effciency is good, is convenient to online detection, and versatility is good, and cost performance is high.
Description of drawings
Fig. 1 is principle structure block diagram of the present invention.
Fig. 2 is the internal structure schematic diagram of integrated laser transmitter unit.
Fig. 3 is the side direction structural representation of integrated laser transmitter unit.
Fig. 4 is the forward structure schematic diagram of integrated laser transmitter unit.
Fig. 5 is the geometrical model figure of integrated laser transmitter unit principle of compositionality.
Fig. 6 is the Facad structure schematic diagram of rotational positioning transmitting objective lens group.
Fig. 7 is the operation principle schematic diagram of rotational positioning transmitting objective lens group.
Fig. 8 is the structure schematic diagram of rotational positioning transmitting objective lens group.
Fig. 9 is the circuit structure block diagram of driving system of stepping motor.
Figure 10 is the electrical schematic diagram of integrated driving power.
Embodiment
As shown in Figure 1, Multi-wavelength integrated infrared semiconductor laser light source of the present invention includes coding control module 1, integrated driving power 2, integrated laser transmitter unit 3, rotational positioning transmitting objective lens group 4 and driving system of stepping motor 5 totally five parts.
Coding control module 1 comprises and is solidified with the FPGA integrated chip 11 that comprises four road LD/LED transmitting illuminant coded messages and the interface circuit 12 of outupt coded signal; Interface circuit 12 is the shared interface circuit of TTL, its four tunnel inputs termination FPGA integrated chip 11, the integrated driving power 2 of its output termination sends code signal to integrated driving power 2, for the multi-wavelength infrared semiconductor laser light source provides four kinds of required laser light field information.
Such as Fig. 2-shown in Figure 4, integrated laser transmitter unit 3 is to utilize MOCVD technique to grow semiconductor epitaxial layers 32 as four road LD/LED transmitting illuminants in four sides of GaN square substrate 31; GaN square substrate 31 and semiconductor epitaxial layers 32 are embedded in the center of laser emission element encapsulating structure 33, and the light-emitting area of semiconductor epitaxial layers 32 is positioned on the position of optical focal plane.During making, it is the geometrical model (Fig. 5) according to the integrated laser transmitter unit, the growth thickness of each semiconductor epitaxial layers 32 on the accurate control GaN square substrate 31, thereby make each light-emitting area be positioned at the focal plane position of optical system, to guarantee that the transmitting objective lens group is to the collimation effect of each wavelength light beam.
Integrated laser transmitter unit 3 is to adopt the MOCVD(metallo-organic compound chemical vapor deposition Metal-organic Chemical Vapor DePosition of being convenient to control outer layer growth thickness) technique, main with the organic compound of III family element and the hydride of group Ⅴ element etc. as crystal growth source material, the gas epitaxy of semiconductors layer (AlGaAs and InGaAsP) that consisted of by Ⅲ-Ⅴ compound semiconductor of symmetric growth respectively on four sides of GaN square substrate 31, thereby as producing 0.865 μ m(LED), 0.9 μ m, 1.06 the bar bar of μ m and four kinds of infrared wavelength LASER Light Source of 1.55 μ m.The light output end of the resonant cavity on each bar bar is parallel with the upper surface of GaN square substrate 31, thereby guarantees four tunnel emission light beams and be consistent perpendicular to the primary optical axis on integrated laser transmitter unit 3 surfaces.
By Fig. 3, Fig. 4 as seen, integrated laser transmitter unit 3 adopts the blocking packaging technology, GaN square substrate 31, semiconductor epitaxial layers 32 and leading-out terminal thereof are integrated in the very little encapsulating structure 33, centered by the semiconductor light emitting district, 10 leading-out terminals are with the circumference mode periphery that is distributed in encapsulating structure 33 symmetrically.10 leading-out terminals are respectively four tunnel control signal input IN, four road supply power voltage input V2, share prime amplification supply power voltage input V1 and ground terminal.
The growth thickness of each semiconductor epitaxial layers 32 on the GaN square substrate 31 is to realize accurate control according to the geometrical model of integrated laser transmitter unit.As shown in Figure 5,
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Represent respectively the luminous point of four road LD/LED transmitting illuminants in the integrated laser transmitter unit 3, S is the circumference (being the foursquare inscribed circle of substrate surface) on the interarea of optical transmitting system,
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4 are positioned on this circumference; Z axis is the emission optical axis, can do 360 ° of rotations at the optical system interarea along circumference S, rotate 90 ° at every turn, make Z axis and
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The emission optical axis coincidence.In the growth course of each semiconductor epitaxial layers 32, must be right
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Thickness along Z-direction is accurately controlled, thereby the light-emitting area that guarantees four kinds of wavelength all is positioned on the focal plane position of optical transmitting system.
Such as Fig. 6-shown in Figure 8, rotational positioning transmitting objective lens group 4 comprises a foursquare base 41, eccentric position is provided with transmitting objective lens 42 in the front of base 41, on four jiaos at the back side of base 41, a pulley is set respectively, four pulleys consist of assembly pulley 43, and this assembly pulley 43 joins with driving system of stepping motor 5.Transmitting objective lens 42 links to each other with stepping motor with conveyer belt by the assembly pulley 43 at base 41 back sides, can realize the rotation on 360 ° on plane, with the some semiconductor epitaxial layers 32 on the corresponding GaN square substrate 31, make corresponding to 0.865 μ m on four semiconductor epitaxial layers 32,0.9 μ m, 1.06 the laser beam of μ m and four kinds of infrared wavelengths of 1.55 μ m has good emission collimation effect, guarantee that with this semiconductor epitaxial layers 32 laser beam of being sent out on GaN square substrate 31 diverse locations keeps alignment, thereby satisfied the requirement of integrated multi-wavelength semiconductor laser light source launch accuracy.Transmitting objective lens 42 is a kind of optical transmitting systems that the light beam of 0.865 μ m, 0.9 μ m, 1.06 μ m, four kinds of infrared wavelengths of 1.55 μ m is all had good coaxial emission effciency.
The size of the base 41 of transmitting objective lens group 4 and the installation site of transmitting objective lens 42 should be corresponding with the growth position of semiconductor epitaxial layers 32, thereby the optical axis that guarantees the semiconductor epitaxial layers 32 light emitted bundles on GaN square substrate 31 diverse locations does not depart from.As shown in Figure 8, the rotation of base 41 is to be finished by the pulley block mechanism of step motor control, and this pulley block mechanism comprises four pulleys, a driving wheel and the great conveyer belt of coefficient of friction.Be connected to each rotation of the driving wheel on the stepping motor rotating shaft, all make conveyer belt turn over a fixed length distance, even base 41 half-twists are positioned on the emission optical axis of a certain wavelength transmitting objective lens 42.By above-mentioned treatment measures, can guarantee the alignment of the laser beam emission of diverse location.
A kind of circuit implementation of driving system of stepping motor 5 is to be made of Hair Fixer switch, pulse generator, feedback and protective circuit, driving chip and stepping motor as shown in Figure 9.Wherein, external Hair Fixer switch whenever by sending out once, just provides a triggering signal of driving system of stepping motor work; Control chip comprises pulse generator and feedback and protective circuit two parts, and the control wave that provides stepping motor to rotate is provided; Drive the pulse current that chip is used for providing the Driving Stepping Motor rotation, with the stepping motor direct-coupling.
System flow of the present invention is: coding control module 1 is according to the coding characteristic of four kinds of different LASER Light Source, four kinds of digitally encoded signals that comprise corresponding laser light field information are provided, this digitally encoded signal is input in the integrated driving power 2 through interface circuit 12, make integrated driving power 2 outputs can satisfy LASER Light Source and drive the electric pulse driving signal that requires, four semiconductor epitaxial layers 32(that are controlled at growth on the same square substrate 31 are the PN junction of four laser diodes on the integrated laser transmitter unit 3), correspondence is launched 0.865 μ m(LED), 0.9 μ m, 1.06 the pulsed laser beam of μ m or 1.55 these four kinds of infrared wavelengths of μ m.The rotational positioning transmitting objective lens group 4 that the laser pulse of above-mentioned four kinds of infrared wavelengths is had higher transmit efficient, control by driving system of stepping motor 5, can 360 ° of rotations in the interarea of optical system place, each half-twist, make transmitting objective lens 42 on the rotational positioning transmitting objective lens group 4 aim at the emission optical axis of the LD/LED transmitting illuminant of certain wavelength, thereby the pulsed laser beam of this wavelength is collimated and launches.
Claims (1)
1. a Multi-wavelength integrated infrared semiconductor laser light source is characterized in that, includes:
Coding control module is joined with integrated driving power, is used for sending to described integrated driving power the different coding signal of corresponding four road LD/LED transmitting illuminants, for above-mentioned Multi-wavelength integrated infrared semiconductor laser light source provides required laser light field information;
Integrated driving power, join with described coding control module and integrated laser transmitter unit respectively, be used for sending the required driving current signal of a certain road LD/LED transmitting illuminant work in four road LD/LED transmitting illuminants according to the code signal that receives to the integrated laser transmitter unit;
The integrated laser transmitter unit joins with described integrated driving power and rotational positioning transmitting objective lens group respectively, is used for according to the driving current signal that receives, and the road LD/LED transmitting illuminant that drives in four road LD/LED transmitting illuminants gives off laser beam; In described integrated laser transmitter unit, comprise have 0.86 μ m, 0.9 μ m, four road LD/LED transmitting illuminants of 1.06 μ m and four kinds of infrared wavelengths of 1.55 μ m;
Rotational positioning transmitting objective lens group is joined with described integrated laser transmitter unit and driving system of stepping motor respectively, and the laser beam datum that is used for each road LD/LED transmitting illuminant of described integrated laser transmitter unit is launched is collimated light beam; And
Driving system of stepping motor joins with described rotational positioning transmitting objective lens group, is used for controlling described rotational positioning transmitting objective lens group rotation and navigates to the road LD/LED transmitting illuminant that described integrated laser transmitter unit is worked;
Described coding control module comprises and is solidified with the FPGA integrated chip that comprises four road LD/LED transmitting illuminant coded messages and joins with described FPGA integrated chip and the interface circuit of outupt coded signal; Described interface circuit is the shared interface circuit of TTL, the described FPGA integrated chip of its four tunnel input termination, the described integrated driving power of its output termination sends code signal to described integrated driving power, for the multi-wavelength infrared semiconductor laser light source provides four kinds of required laser light field information;
Described integrated laser transmitter unit is to utilize MOCVD technique to grow semiconductor epitaxial layers as four road LD/LED transmitting illuminants in four sides of GaN square substrate; Described GaN square substrate and described semiconductor epitaxial layers are embedded in the center of laser emission element encapsulating structure, and the light-emitting area of described semiconductor epitaxial layers is positioned on the position of optical focal plane;
Be provided with four control signal ends and four LASER Light Source feeder ears corresponding to four road LD/LED transmitting illuminants at described integrated driving power; Described control signal end is connected with described coding control module respectively, and described four LASER Light Source feeder ears are connected on four semiconductor epitaxial layers on the described GaN square substrate;
Described rotational positioning transmitting objective lens group comprises a foursquare base, eccentric position is provided with transmitting objective lens in the front of described base, on four jiaos at the back side of described base, a pulley is set respectively, four described pulleys consist of assembly pulley, and described assembly pulley and driving system of stepping motor join; Described transmitting objective lens links to each other with stepping motor with conveyer belt by the described assembly pulley of described base back surface, realize the rotation on 360 ° on plane, with the some described semiconductor epitaxial layers on the described GaN square of the correspondence substrate, make the laser beam corresponding to 0.865 μ m on four described semiconductor epitaxial layers, 0.9 μ m, 1.06 μ m and four kinds of infrared wavelengths of 1.55 μ m have good emission collimation effect, guarantee that with this laser beam that described semiconductor epitaxial layers is sent out on described GaN square substrate diverse location keeps alignment.
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| CN 201110280621 CN102354907B (en) | 2011-09-21 | 2011-09-21 | Multi-wavelength integrated infrared semiconductor laser light source |
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| CN 201110280621 CN102354907B (en) | 2011-09-21 | 2011-09-21 | Multi-wavelength integrated infrared semiconductor laser light source |
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| CN102354907B true CN102354907B (en) | 2013-03-27 |
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| CN106206849B (en) * | 2016-08-24 | 2017-11-21 | 中山德华芯片技术有限公司 | Temperature monitoring method when prepared by six joint solar cells containing dbr structure |
| CN109541545B (en) * | 2018-11-02 | 2023-04-14 | 中国航空工业集团公司西安飞行自动控制研究所 | Multi-wavelength laser space positioning system and method |
| CN116345299A (en) * | 2023-02-20 | 2023-06-27 | 安徽庆宇光电科技有限公司 | Multi-wavelength light source driving control circuit |
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| US7889422B2 (en) * | 2005-06-02 | 2011-02-15 | Panasonic Corporation | Two-dimensional image display device |
| JP2009105106A (en) * | 2007-10-22 | 2009-05-14 | Hitachi Ltd | Optical transmitter/receiver module |
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