CN102354084A - Flow field pressure transducer of immersion lithography machine based on PVDF (polyvinylidene fluoride) - Google Patents
Flow field pressure transducer of immersion lithography machine based on PVDF (polyvinylidene fluoride) Download PDFInfo
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- CN102354084A CN102354084A CN2011101687883A CN201110168788A CN102354084A CN 102354084 A CN102354084 A CN 102354084A CN 2011101687883 A CN2011101687883 A CN 2011101687883A CN 201110168788 A CN201110168788 A CN 201110168788A CN 102354084 A CN102354084 A CN 102354084A
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Abstract
The invention discloses a flow field pressure transducer of an immersion lithography machine based on PVDF. The transducer comprises a PVDF pressure sensing element containing a shielding film and a signal processing means composed of a voltage amplifier circuit, a charge amplifier circuit and a filter circuit. The PVDF pressure sensing element containing the shielding film generates charge signals which pass through a circuit formed by connection between the output terminal of a charge amplifier and the input terminal of a voltage amplifier, between the output terminal of a voltage amplifier and the input terminal of the filter circuit and between a matching BNC interface of the input terminal of the charge amplifier circuit and an BNC interface of the PVDF pressure sensing element containing the shielding film. The PVDF pressure sensing element containing the shielding film provided in the invention has the characteristics of high sensitivity, low impedance, good flexibility and the like, is simple and convenient to install and produces little disturbance to a flow field. The signal processing means conditions the charge signals output by the PVDF pressure sensing element to become acquirable voltage signals of -5 to 5 V, and effectively inhibits null drift and noise interference.
Description
Technical field
The present invention relates to the fluid field pressure sensor in a kind of liquid immersion lithography (Immersion Lithography) system, particularly relates to a kind of immersed photoetching machine fluid field pressure sensor based on PVDF (PVF partially).
Background technology
Modern dry lithography machine utilizes optical system; Scribbling accurately projection of the pattern on the mask plate, exposure on the silicon chip of photoresist; Liquid immersion lithography then meets the immersion liquid that optical characteristics requires through filling one deck in the space between lens combination and the silicon chip in the dry lithography system; Improve the light wave refractive index in this sheaf space, increase numerical aperture and system's depth of focus of projection objective, thereby reach the purpose of the littler live width of acquisition.
Immersion lithography has improved the resolution and the depth of focus of exposure system; Make the lines that etch 65 to 22nm characteristic dimensions become possibility; But because the fluctuation of fluid injection speed, silicon chip step-scan campaign are to the influence of the generation of bubble in the action of traction of liquid, flow field height change that the adjustment of silicon chip upright position causes and the immersion flow field and factor such as crumble and fall; The projection objective lower surface can receive the effect of stress; Occurrence positions squints and deformation, even up-down vibration, has had a strong impact on the exposure accuracy of system.Therefore, the dynamic pressure of research immersion flow field is significant to optimizing immersion system structure and running parameter.
Micro gap flow field pressure detection method commonly used commonly used at present is to adopt aperture impulse method or miniature diffuse si piezoresistance sensor.Aperture impulse method is meant opens an aperture at the measured zone place, and is connected with pressure transducer through one section conduit, and the effect of conduit is to transmit pressure, and its length is looked the installation needs and decided, and is usually used in the measurement of curved surface pressure or narrow and small area inner pressure distribution.The diffuse si piezoresistive pressure sensor adopts the diffusion technique of integrated circuit, mixes silicon chip to boron impurity and forms that pressure-sensitive bridge processes, and its measuring principle is based on the piezoresistive effect of semiconductor gauge.
These pressure measurement methods exist deficiency separately.
1) for aperture impulse method:
A) bubble is difficult to drain in the pressure guiding pipe, and when bubble was compressed, measured value can be much larger than actual value;
B) pressure surge of immersion flow field is less, and the error that the pressure guiding pipe damping action causes can not be ignored;
C) still need take bigger space owing to place the usual pressure sensor, so the density of measurement point can be restricted.
2) for the diffuse si piezoresistance sensor
A) complex manufacturing technology of diffuse si piezoresistance sensor, cost an arm and a leg (10,000 RMB/ only), when measurement point more for a long time, the cost of sensor is higher;
B) though that the diffuse si piezoresistance sensor is easy to realize is microminiaturized, these two indexs of sensor bulk and sensitivity are mutual restriction still: when highly sensitive, and range hour, sensor bulk is still bigger, is difficult to satisfy installation requirement; And when sensor bulk hour, its range is much larger than the pressure surge scope of immersion flow field.So, be difficult to the diffuse si piezoresistance sensor that finds volume and range all to meet the demands.
Summary of the invention
The purpose of this invention is to provide a kind of immersed photoetching machine fluid field pressure sensor, be used to detect the dynamic pressure distribution in immersed photoetching machine flow field based on PVDF.
For achieving the above object, the technology that the present invention adopts as follows:
It is to be attached to projecting lens model lower surface and to be immersed in the fluid field pressure sensor in the liquid film for the present invention; Described fluid field pressure sensor comprises PVDF pressure sensor and the signal processing apparatus that contains screened film; Wherein:
1) contain the PVDF pressure sensor of screened film:
All there is the pressure survey district of symmetrical distribution on the two sides of PVDF film one end of PVDF pressure sensor, and two pressure survey districts have an aluminium electrode of arranging in the same way respectively, two aluminium electrode, symmetrical distributions in the opposite direction along pressure survey zone centerline separately; Wherein the aluminium electrode of one side also is fixedly connected with first rivet with an end in contact of the wire stylet of low noise shielding line; Coat whole PVDF pressure sensor with insulation course then; The aluminium electrode of another side is wiped partial insulative layer off; With an end in contact of the screen layer of low noise shielding line and be fixedly connected, whole PVDF pressure sensor, insulation course, first rivet and second rivet are coated fully and be fixedly connected with the 3rd rivet with the screen layer of low noise shielding line with the aluminum screened film with second rivet; Wire stylet is connected bnc interface with the other end that screen layer is formed;
2) signal processing apparatus: comprise voltage amplifier circuit, charge amplifying circuit and filtering circuit; Voltage amplifier circuit is that the amplifier AD627 that low-power consumption, high precision appearance are used is built; Charge amplifying circuit comprises the dc feedback network that imported amplifier AD745 of low noise high speed FET and high speed BiFET operational amplifier A D711 build; Filtering circuit is that eight rank elliptic filter MAX293 are built the road; Charge signal is through charge amplifier output termination voltage amplifier input end; Voltage amplifier output termination filtering circuit input end; The charge amplifying circuit input end has supporting bnc interface and is connected with the bnc interface of the PVDF pressure sensor that contains screened film; The 9V battery tension is converted into+5V and-5V DC voltage through micropower low-dropout regulator LT1121 and reversed charge pump MAX1697, to above circuit power supply is provided.
The beneficial effect that the present invention has is;
1) the PVDF film has low-density, highly sensitive characteristic (higher more than 10 times than piezoelectric ceramics),
And impedance is low, as a kind of sensor, can more effectively tiny signal be delivered in the signal supervisory instrument and go.Compare with piezoelectric ceramics, the PVDF film also has very high resilient flexibility, can directly stick on body surface and does not influence its mechanical motion.The PVDF pressure sensor thickness that the present invention adopted is merely about 200 μ m, can stick on the lower surface of projecting lens model with common viscose agent, and easy for installation simple, it is little to take up room, and stream field disturbs very little.
2) selected for use the imported amplifying circuit AD745 of low noise high speed FET to build charge amplifying circuit, its high input impedance can effectively improve the signal to noise ratio (S/N ratio) of PVDF pressure sensor, output voltage with the input electric charge relation be,
3) select low-power consumption, high precision instrumentation amplifier AD627 to build voltage amplifier circuit, enlargement factor is confirmed by the measurement point area of PVDF pressure transducer, the pressure limit of actual detected and the voltage range of signal acquiring system.If enlargement factor is too little, can cause measuring accuracy to descend; If enlargement factor is too big, noise and drift also can be amplified thereupon.Satisfy following relational expression,
Picking and placeing big multiple is 105 o'clock, and the sensor output sensitivity is 1.32mv/Pa, if adopt MSP430 to carry out data acquisition, the collection voltage range is 0～2.5V, and the range of sensor is about-1KPa～1KPa, meets better with the actual pressure fluctuation range.
4) carried out the signal shielding processing effectively, guaranteed to gather with the output signal undistorted to greatest extent.At first, the screened film of PVDF pressure transducer is the method for isolating electromagnetic interference (EMI) from the source; Secondly, because the pressure signal of actual measurement belongs to low frequency signal, before every grade of amplifier, connect a simple RC low-pass filter, effective attenuation has got into the high frequency interference of sensor; At last, the signal processing circuit afterbody is designed to the precipitous low-pass filter of attenuation characteristic, farthest to reduce to export the interference in the signal.
Description of drawings
Fig. 1 is the present invention and projecting lens model assembling synoptic diagram.
Fig. 2 is a PVDF pressure sensor vertical view of the present invention.
Fig. 3 is a PVDF pressure sensor front elevation of the present invention.
Fig. 4 is the cut-open view P-P of PVDF pressure sensor vertical view of the present invention.
Fig. 5 is the PVDF pressure sensor synoptic diagram that contains screened film of the present invention.
Fig. 6 is voltage amplifier circuit figure of the present invention.
Fig. 7 is charge amplifying circuit figure of the present invention.
Fig. 8 is filtering circuit figure of the present invention.
Among the figure: 1, projecting lens model, 2, the fluid field pressure detecting sensor, 3, liquid film, A, contain the PVDF pressure sensor of screened film, B, signal processing apparatus; A01, PVDF film, A02, aluminium electrode, A03, aluminium electrode, A0, PVDF pressure sensor; A1, wire stylet, A2, insulation course, A3, screen layer, A4, screened film; A5, first rivet, A6, second rivet, A7, the 3rd rivet.
Embodiment
Below in conjunction with accompanying drawing and example in detail practical implementation process of the present invention.
As shown in Figure 1, the present invention is the fluid field pressure sensor 2 that is attached to projecting lens model 1 lower surface and is immersed in 3 li of liquid films; Described fluid field pressure sensor 2 comprises PVDF pressure sensor A and the signal processing apparatus B that contains screened film; The present invention can use in lithographic equipments such as substep repetition or step-scan formula; During use; Projecting lens model 1 does not move; The PVDF pressure sensor A that contains screened film accepts the pressure surge excitation generation pressure signal of liquid film 3, outputs to signal processing apparatus B, outputs to monitoring devices such as oscillograph at last.
Like Fig. 2, Fig. 3, Fig. 4, shown in Figure 5, represented the PVDF pressure sensor A that contains screened film of embodiment of the present invention, utilize photoetching electrode method on a slice PVDF film, to produce needed electrode pattern; All there is the pressure survey district of symmetrical distribution on the two sides of PVDF film A01 one end, and two pressure survey districts have the aluminium electrode A 02, the A03 that arrange in the same way respectively, and two aluminium electrode A 02, A03 be in the opposite direction along pressure survey zone centerline separately, be symmetrically distributed; Wherein the aluminium electrode A 02 of one side also is fixedly connected with the first rivet A5 with the end in contact of the wire stylet A1 of low noise shielding line; Coat whole PVDF pressure sensor A0 with insulation course A2 then; The aluminium electrode A 03 of another side is wiped partial insulative layer off; With the end in contact of the screen layer A3 of low noise shielding line and be fixedly connected, whole PVDF pressure sensor A0, insulation course A2, the first rivet A5 and the second rivet A6 are coated fully and be fixedly connected with the 3rd rivet A7 with the screen layer A3 of low noise shielding line with aluminum screened film A4 with the second rivet A6; Wire stylet A1 is connected bnc interface with the other end that screen layer A3 forms.
Like Fig. 6, Fig. 7, shown in Figure 8, represented that the signal processing apparatus B of embodiment of the present invention comprises voltage amplifier circuit, charge amplifying circuit and filtering circuit; Voltage amplifier circuit is that the amplifier AD627 that low-power consumption, high precision appearance are used is built; Charge amplifying circuit comprises the dc feedback network that imported amplifier AD745 of low noise high speed FET and high speed BiFET operational amplifier A D711 build; Filtering circuit is that eight rank elliptic filter MAX293 are built the road; Charge signal is through charge amplifier output termination voltage amplifier input end; Voltage amplifier output termination filtering circuit input end; The charge amplifying circuit input end has supporting bnc interface and is connected with the bnc interface of the PVDF pressure sensor A that contains screened film; The 9V battery tension is converted into+5V and-5V DC voltage through micropower low-dropout regulator LT1121 and reversed charge pump MAX1697, to above circuit power supply is provided.
Select for use AD745 to build charge amplifying circuit, select for use AD711 to build dc feedback network, connect the input end and the output terminal of amplifying circuit, output voltage is linearly proportional with the input charge signal.
Select for use AD627 to build voltage amplifier circuit, the gain-adjusted scope is at 5～1000 times, and excessive then noise of enlargement factor and drift aggravation too smallly then have a strong impact on sensitivity, are 105 times through the selected enlargement factor of test.
Select for use MAX293 to build low-pass filter circuit, filtering high band noise signal.
The 9V battery tension is converted into+5V and-5V DC voltage through micropower low-dropout regulator LT1121 and reversed charge pump MAX1697, offers each circuit.
To contain the input interface that low noise shielding line that the PVDF pressure sensor A of screened film draws is connected on signal processing apparatus B; The low noise shielding line of pick-up units such as oscillograph is connected on the delivery outlet of signal processing apparatus B; Switch controlling signal treating apparatus on/off, device is by 9V storage battery power supply (can uninterruptedly use 4 days under the normal condition).
Contain screened film PVDF pressure sensor A screened film A03 and signal processing apparatus B aluminium box, detecting instrument altogether.
(1) PVDF pressure sensor A0 utilizes photoetching electrode method that required electrode pattern etching is come out; Photoetching technique is to adopt the method for photographic copying; Figure on the mask accurately duplicated scribbling on the metal evaporation layer of photoresist; Utilize the protective effect of photoresist then, metal level is carried out the selective chemical corrosion, on metal level, obtain and the corresponding figure of mask plate.In the present invention, through cleaning-fix-get rid of film-preceding baking-exposure-development-after dry by the fire-corrode-go these steps of photoresist after, just can obtain the PVDF pressure sensor A0 of required single-point or multiple spot.
(2) core component of signal processing apparatus B comprises charge amplifying circuit, voltage amplifier circuit and filtering circuit; Its component relationship is; The 9V battery tension is converted into+5V and-5V DC voltage through micropower low-dropout regulator and reversed charge pump; Offer each circuit, the PVDF pressure sensor A that contains screened film receives to be input to charge amplifying circuit behind the dynamic pressure excitation generation charge signal, after the voltage signal of the alternation of output amplifies through voltage amplifier; Further be input to and carry out filtering in the filtering circuit, at last by amplitude of filtering circuit output-3～+ voltage signal of 3V.The signal that will contain on the PVDF pressure sensor A of screened film is incorporated into the input bnc interface on the signal processing apparatus B, and this interface is connected to the input end of charge amplifying circuit; The voltage signal of the last output of filtering circuit is outputed on each monitoring instrument the work of on-off switch control signal treating apparatus B through the output bnc interface on the signal processing apparatus B.
Claims (1)
1. immersed photoetching machine fluid field pressure sensor based on PVDF, it is characterized in that: it is the fluid field pressure sensor (2) that is attached to projecting lens model (1) lower surface and is immersed in liquid film (3) lining; Described fluid field pressure sensor (2) comprises PVDF pressure sensor (A) and the signal processing apparatus (B) that contains screened film; Wherein:
1) contain the PVDF pressure sensor (A) of screened film:
All there is the pressure survey district of symmetrical distribution on the two sides of PVDF film (A01) end of PVDF pressure sensor (A0); Two pressure survey districts have an aluminium electrode (A02, A03) of arranging in the same way respectively, two aluminium electrodes (A02, A03), symmetrical distribution in the opposite direction along pressure survey zone centerline separately; Wherein the aluminium electrode (A02) of one side also is fixedly connected with first rivet (A5) with an end in contact of the wire stylet (A1) of low noise shielding line; Use insulation course (A2) to coat whole PVDF pressure sensor (A0) then; The aluminium electrode (A03) of another side is wiped partial insulative layer off; With an end in contact of the screen layer (A3) of low noise shielding line and be fixedly connected, whole PVDF pressure sensor (A0), insulation course (A2), first rivet (A5) and second rivet (A6) are coated fully and be fixedly connected with the 3rd rivet (A7) with the screen layer (A3) of low noise shielding line with aluminum screened film (A4) with second rivet (A6); Wire stylet (A1) is connected bnc interface with the other end that screen layer (A3) is formed;
2) signal processing apparatus (B): comprise voltage amplifier circuit, charge amplifying circuit and filtering circuit; Voltage amplifier circuit is that the amplifier AD627 that low-power consumption, high precision appearance are used is built; Charge amplifying circuit comprises the dc feedback network that imported amplifier AD745 of low noise high speed FET and high speed BiFET operational amplifier A D711 build; Filtering circuit is that eight rank elliptic filter MAX293 are built the road; Charge signal is through charge amplifier output termination voltage amplifier input end; Voltage amplifier output termination filtering circuit input end; The charge amplifying circuit input end has supporting bnc interface and is connected with the bnc interface of the PVDF pressure sensor (A) that contains screened film; The 9V battery tension is converted into+5V and-5V DC voltage through micropower low-dropout regulator LT1121 and reversed charge pump MAX1697, to above circuit power supply is provided.
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| CN 201110168788 CN102354084B (en) | 2011-06-22 | 2011-06-22 | Flow field pressure transducer of immersion lithography machine based on PVDF (polyvinylidene fluoride) |
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| CN 201110168788 CN102354084B (en) | 2011-06-22 | 2011-06-22 | Flow field pressure transducer of immersion lithography machine based on PVDF (polyvinylidene fluoride) |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103471765A (en) * | 2013-09-06 | 2013-12-25 | 北京遥测技术研究所 | Underwater dynamic pressure sensor signal conditioning circuit |
| CN107644522A (en) * | 2017-10-16 | 2018-01-30 | 河南汇纳科技有限公司 | A kind of wireless sensing system of the direct current transportation environmental monitoring based on LoRa |
| CN112665781A (en) * | 2020-12-16 | 2021-04-16 | 广东电网有限责任公司 | Pressure sensing monitoring device |
| CN112781781A (en) * | 2020-12-29 | 2021-05-11 | 浙江启尔机电技术有限公司 | Disturbance force measuring device of immersion control unit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113049173B (en) * | 2019-12-27 | 2022-07-01 | 上海微电子装备（集团）股份有限公司 | High-frequency-response precision force measuring device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103471765A (en) * | 2013-09-06 | 2013-12-25 | 北京遥测技术研究所 | Underwater dynamic pressure sensor signal conditioning circuit |
| CN107644522A (en) * | 2017-10-16 | 2018-01-30 | 河南汇纳科技有限公司 | A kind of wireless sensing system of the direct current transportation environmental monitoring based on LoRa |
| CN112665781A (en) * | 2020-12-16 | 2021-04-16 | 广东电网有限责任公司 | Pressure sensing monitoring device |
| CN112781781A (en) * | 2020-12-29 | 2021-05-11 | 浙江启尔机电技术有限公司 | Disturbance force measuring device of immersion control unit |
| CN112781781B (en) * | 2020-12-29 | 2022-04-22 | 浙江启尔机电技术有限公司 | Disturbance force measuring device of immersion control unit |
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