CN102346164B - Method for constructing uric acid sensor on the basis of super-long zinc oxide nano-wire - Google Patents
Method for constructing uric acid sensor on the basis of super-long zinc oxide nano-wire Download PDFInfo
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- CN102346164B CN102346164B CN 201110185357 CN201110185357A CN102346164B CN 102346164 B CN102346164 B CN 102346164B CN 201110185357 CN201110185357 CN 201110185357 CN 201110185357 A CN201110185357 A CN 201110185357A CN 102346164 B CN102346164 B CN 102346164B
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Abstract
The invention provides a method for constructing a uric acid sensor on the basis of a super-long zinc oxide nano-wire. The method sequentially comprises the steps of: first preparing a super-long zinc oxide nano-wire; then evaporating a layer of Ti/Au electrodes on an insulating silicon wafer; bridging the electrodes with the nano-wire, which is fixed by silver paste, and leading out a copper lead simultaneously; etching impurities on the surface of the zinc oxide nano-wire with oxygen plasma, and fixing a layer of bio-enzyme by a chemical modification method; finally adjusting the bovine serum albumin (BSA) concentration in the reaction solution, thus realizing uric acid molecule detection according to concentration from low to high. The main points of the invention lie in that: the method provided in the invention has no need for a catalyst of Au and other precious metals and also has no need for using a vacuum pump to maintain a reaction chamber in a low pressure state; and the uric acid field effect transistor sensor constructed by the super-long zinc oxide nano-wire in the invention has low cost and large detection scope, thus being suitable for actual human body uric acid concentration detection.
Description
Technical field
The invention belongs to preparation and the application of one-dimensional nano line, a kind of preparation method of zinc oxide nanowire of overlength particularly is provided, by under the reactant high concentration at the uniform zinc oxide nanowire of the silicon chip of catalyst-free growth, adopt the zinc oxide nanowire of this overlength to make up uric acid field effect transistor sensing device then.
Background technology
ZnO is II-VI compounds of group, is a kind of broad stopband direct band-gap semicondictor material, and energy gap is 3.37 eV under the room temperature.Have high fusing point and thermal conductivity, good chemical stability, high-specific surface area, electrochemical activity, characteristics such as high isopotential point and good biocompatibility, be fit to a large amount of absorption and have low isoelectric point protein or enzyme, and for fixing enzyme provides a good microenvironment, can keep the active and stable of enzyme well.Have broad application prospects at aspects such as ultra-violet light-emitting device, feds, surface acoustic wave device, piezoelectric transducer, solar cell, sensors.(Y. Cui, Q.Wei, H. Park, C.M. Lieber, Science 293 (2001) 1289; F. Patlsky, B.P. Timko, G. Yu, Y. Fang, A.B. Greytak, G. Zheng, C.M. Lieber, Science313 (2006) 1100; S. Lee, A. Choi, C.J. Kim, K.J. Jeon, M.H. Jo, H.I. Jung, W. Lee, JKPS 55 (2009) 232; M. Hern á ndez-V é lez, Thin Solid Films 495 (2006) 51; E. Comini, G. Faglia, G. Sberveglieri, Z. Pen, Z.L.Wang, Appl. Phys. Lett. 81 (2002) 1869; D.C. Look, Mater. Sci. Eng. B80 (2001) 383; J.X.Wang, X.W. Sun, A.Wei, Y. Lei, P. Cai, C.M. Li, Z.L. Dong, Appl. Phys. Lett. 88 (2006) 233106.) the ZnO appearance of nano material is various, comprises nano wire, nanometer band, four-acicular nanometer rod, nanotube etc.Different nanostructureds all can have its potential using value in different fields.In recent years, along with receiving the carrying out in a deep going way of research of sensor, the ZnO nano material it seems it is best nano biological sensor material at present.Therefore, but preparation purity height large area deposition, pattern homogeneous, controllable size, specific surface area ZnO nano wire big, overlength are to make up to receive one of necessary condition of biology sensor.
Present stage in the world the researchist mainly make up field effect transistor with one-dimensional nano line and receive biology sensor, but at least also there are four aspect deficiencies: one, because liquid such as the water-soluble and alcohol of ZnO nano material, therefore seldom there is report to make biology sensor with the ZnO nano material, so the research of its performance is also lacked relatively; Two, the nano wire of preparation is all very short, thereby corresponding FET passage is also relatively very short; Three, the concentration sensing range of biomolecule is all very little; Four, when biomolecule concentration increased, curve was not that step increases (or reducing), therefore can't practical application at every turn.For example, the biology sensor sensing range based on the One-Dimensional ZnO nano wire of Korea S scientist Sang Yeol Lee report only is confined to 2.5nM-250nM, and when each concentration increases, does not have tangible step curve to occur.And detect for the human body uric acid concentration of reality, can't distinguish the curve of concentration like this can't use, therefore this device also very haves much room for improvement.
Summary of the invention
The object of the present invention is to provide a kind of field effect transistor biology sensor based on single overlength zinc oxide nanowire.Have that method is simple, cost is low, efficient is high, product quality is high and many advantages such as suitable large-scale production.
The present invention proposes a kind of construction method of the uric acid sensor based on the overlength zinc oxide nanowire, comprise the preparation process of overlength zinc oxide nanowire and the building process of field effect transistor uric acid sensor.
The preparation process of overlength zinc oxide nanowire is according to following steps:
1. will wait zinc paste and the activated carbon powder of molal quantity to mix as raw material;
2. substrate: silicon chip is cleaned repeatedly with acetone, absolute ethyl alcohol and deionized water, at last with its oven dry as growth substrate;
3. the above-mentioned raw meal of handling well is put in right amount in the middle of the little porcelain boat of aluminium oxide, then the substrate left-hand thread directly over little porcelain boat, and pinion with fine copper wire;
4. this little porcelain boat is pushed to CVD stove highest temperature district with finer wire, temperature remains between 980 ℃-1080 ℃ constant;
5.15 after a minute reaction finishes little porcelain boat is taken out, takes off the zinc oxide nanowire that obtains overlength behind the silicon chip.
The building process of field effect transistor uric acid sensor is according to following steps:
1. evaporation last layer Ti/Au electrode on silicon-on-insulator at first;
2. then single overlength zinc oxide nanowire is connected across between the electrode, and fixes with the silver slurry, draw copper conductor simultaneously;
3. fall the impurity on single overlength zinc oxide nanowire surface again with oxygen plasma etch, be immersed in ((3-aminopropyl) triethoxy silane 3% that contains 3-APTES then, DI water 5%) in the alcohol mixed solution 24 hour, then under 37 ℃ of environment, utilize bifunctional reagent glutaraldehyde (glutaraldehyde, GAD) the fixing one deck uricase of saturated vapour;
4. last by regulating and control the concentration of bovine serum albumin (BSA) in the reaction solution, the signal to noise ratio (S/N ratio) of reduction field effect transistor uric acid sensor is finished the preparation of field effect transistor uric acid sensor.
The sensor source drain voltage is set at-1V, so just can be used for detecting the uric acid molecule from low to high according to concentration.
At present, for answering transistor sensor also rarely found based on the biological field of single One-Dimensional ZnO nano wire.Among the present invention, on the basis that utilizes preparation superlong ZnO nano wire, the method for a kind of surface chemical modification method of creationary employing and bovine serum albumin(BSA) has successfully detected uric acid molecule under low concentration and the high concentration.By the present invention, successfully prepared the ZnO nano wire of good crystallinity, favorable orientation, uniform component, overlength, and successfully made up single superlong ZnO nano wire biological field and answer the transistor uric acid sensor.This kind method technology is simple, and is with low cost, is fit to large-scale production.
Compared with prior art, a kind of field effect transistor biology sensor based on single overlength zinc oxide nanowire provided by the invention has the following advantages:
1. Zhi Bei nanowire length is very long, can reach 1mm at most;
2. corresponding FET passage is relatively very big;
3. the concentration sensing range of biomolecule is very big, can be used for the actual human body uric acid concentration and detects;
4. at every turn when biomolecule concentration increases, curve electric conductivity value step increases.
Description of drawings
Fig. 1 adopts the large tracts of land superlong ZnO nano wire low power field emission scanning electron microscope photo of CVD method preparation for the present invention.Gained nanowire size homogeneous, area are big, length is very long.
Fig. 2 is the actual optical photograph of superlong ZnO nano-wire field effect transistor.
Fig. 3 for the present invention to the uric acid molecular conecentration from low to high detected electricity lead-time changing curve.
Embodiment
Below in conjunction with example technical scheme of the present invention is further specified:
Example 1
1. mix with mol ratio 1:1 with ZnO and activated carbon powder, and baking and banking up with earth 1h more than 100 ℃;
2. take by weighing the 0.2g mixed-powder and place the aluminium oxide porcelain boat, and the silicon chip left-hand thread directly over little porcelain boat, pinion with fine copper wire;
3. this little porcelain boat is pushed to CVD stove highest temperature district with finer wire, temperature remain on 980 the degree or more than;
4. wait for after reaction in 15 minutes finishes little porcelain boat is taken out, take off the zinc oxide nanowire that obtains overlength behind the silicon chip;
5. learn following single overlength zinc oxide nanowire of microscopical probe station and be connected across between the electrode being furnished with high luminous intensity distribution, and fix with the silver slurry, draw copper conductor simultaneously;
6. fall the impurity on single overlength zinc oxide nanowire surface with oxygen plasma etch, the fixing one deck biology enzyme of the method by chemical modification is then finished the structure of field effect transistor uric acid sensor;
7. last by regulating and control the concentration of bovine serum albumin (BSA) in the reaction solution; So just can be used for detecting the uric acid molecule from low to high according to concentration.
The One-Dimensional ZnO nano-wire field effect transistor sensor passage of this method preparation is long, signal to noise ratio (S/N ratio) is little, sensing range is very big, is fit to the actual human body uric acid concentration and detects.
Claims (6)
1. the construction method based on the uric acid sensor of overlength zinc oxide nanowire is characterized in that,
1). overlength zinc oxide nanowire preparation process is:
(1). will wait the zinc paste of molal quantity and activated carbon powder to mix as raw material;
(2). substrate: silicon chip is cleaned repeatedly with acetone, absolute ethyl alcohol and deionized water, at last it is dried as growth substrate;
(3). the raw meal that step (1) is handled well is put in the middle of the little porcelain boat of aluminium oxide in right amount, then the substrate left-hand thread directly over little porcelain boat, and pinion with fine copper wire;
(4). this little porcelain boat is pushed to CVD stove highest temperature district with finer wire, and temperature remains between 980 ℃-1080 ℃ constant;
(5). wait for after reaction in 15 minutes finishes little porcelain boat is taken out, obtain the overlength zinc oxide nanowire after taking off silicon chip;
2). the building process of uric acid field effect transistor is:
(1). evaporation last layer Ti/Au electrode on silicon-on-insulator at first;
(2). then the overlength zinc oxide nanowire is connected across between the electrode, and fixes with the silver slurry, draw copper conductor simultaneously;
(3). fall the impurity on overlength zinc oxide nanowire surface again with oxygen plasma etch, be immersed in the alcohol mixed solution that contains 3-APTES 24 hours then, then under 37 ℃ of environment, utilize fixedly one deck uricase of bifunctional reagent glutaraldehyde saturated vapour;
(4). at last by the concentration of bovine serum albumin (BSA) in the regulation and control reaction solution, reduce the signal to noise ratio (S/N ratio) of field effect transistor uric acid sensor, finish the preparation of field effect transistor uric acid sensor.
2. the construction method of the uric acid sensor based on the overlength zinc oxide nanowire as claimed in claim 1, it is characterized in that: zinc paste and activated carbon powder blending ratio are mol ratio 1:1.
3. the construction method of the uric acid sensor based on the overlength zinc oxide nanowire as claimed in claim 1, it is characterized in that: the growth substrate of selecting for use is the silicon chip of no catalysis; And laying method is for being inverted on the little porcelain boat.
4. the construction method of the uric acid sensor based on the overlength zinc oxide nanowire as claimed in claim 1, it is characterized in that: step (4) temperature of reaction is constant between 980 ℃-1080 ℃; Reaction time is 15min.
5. the construction method of the uric acid sensor based on the overlength zinc oxide nanowire as claimed in claim 1 is characterized in that: by the concentration of bovine serum albumin (BSA) in the regulation and control reaction solution, reduce the signal to noise ratio (S/N ratio) of field effect transistor uric acid sensor.
6. the construction method of the uric acid sensor based on the overlength zinc oxide nanowire as claimed in claim 1 is characterized in that: the uric acid sensor source-drain voltage is set at-1V, is used for detecting the uric acid molecule from low to high according to concentration then.
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| CN103441154B (en) * | 2013-06-26 | 2015-08-12 | 北京科技大学 | A kind of ZnO nanometer array ultraviolet detector and preparation method thereof |
| CN103382550B (en) * | 2013-07-18 | 2016-05-11 | 哈尔滨工业大学 | A kind of method of preparing copper doped zinc oxide nano-comb |
| CN107492583A (en) * | 2017-08-08 | 2017-12-19 | 淮阴工学院 | A kind of preparation method of the UV sensor based on zinc oxide nano-belt |
| CN107561041B (en) * | 2017-08-29 | 2020-06-23 | 中国科学院海洋研究所 | Photoelectrochemical detection method of Sulfate Reducing Bacteria (SRB) |
| CN108018329A (en) * | 2017-11-03 | 2018-05-11 | 中山大学 | Control and in-situ detection method of a kind of electron beam irradiation to enzymatic activity |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005023700A2 (en) * | 2003-09-03 | 2005-03-17 | The Regents Of The University Of California | Nanoelectonic devices based on nanowire networks |
| US7192802B2 (en) * | 2004-10-29 | 2007-03-20 | Sharp Laboratories Of America, Inc. | ALD ZnO seed layer for deposition of ZnO nanostructures on a silicon substrate |
| CN101350364A (en) * | 2008-09-04 | 2009-01-21 | 复旦大学 | Method for preparing nano zinc oxide field-effect transistor |
| CN101592626A (en) * | 2009-03-19 | 2009-12-02 | 苏州纳米技术与纳米仿生研究所 | Quasi-one-dimensional metal oxide nano-material biosensor and preparation method thereof |
| WO2010044932A9 (en) * | 2008-07-11 | 2010-06-17 | Cornell University | Nanofluidic channels with integrated charge sensors and methods based thereon |
| CN101776639A (en) * | 2010-01-15 | 2010-07-14 | 长春理工大学 | ZnO nanowire biosensor and preparation method thereof |
-
2011
- 2011-07-01 CN CN 201110185357 patent/CN102346164B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005023700A2 (en) * | 2003-09-03 | 2005-03-17 | The Regents Of The University Of California | Nanoelectonic devices based on nanowire networks |
| US7192802B2 (en) * | 2004-10-29 | 2007-03-20 | Sharp Laboratories Of America, Inc. | ALD ZnO seed layer for deposition of ZnO nanostructures on a silicon substrate |
| WO2010044932A9 (en) * | 2008-07-11 | 2010-06-17 | Cornell University | Nanofluidic channels with integrated charge sensors and methods based thereon |
| CN101350364A (en) * | 2008-09-04 | 2009-01-21 | 复旦大学 | Method for preparing nano zinc oxide field-effect transistor |
| CN101592626A (en) * | 2009-03-19 | 2009-12-02 | 苏州纳米技术与纳米仿生研究所 | Quasi-one-dimensional metal oxide nano-material biosensor and preparation method thereof |
| CN101776639A (en) * | 2010-01-15 | 2010-07-14 | 长春理工大学 | ZnO nanowire biosensor and preparation method thereof |
Non-Patent Citations (4)
| Title |
|---|
| ZnO 一维纳米结构在生物传感方面的研究进展;方铉等;《长春理工大学学报》;20090315;第32卷(第1期);138-141,131 * |
| ZnO超长微米线制备及其在压电应力传感器方面的应用;孙开通;《中国优秀硕士学位论文全文数据库 工程科技I辑》;20101015(第10期);21-23,31 * |
| 孙开通.ZnO超长微米线制备及其在压电应力传感器方面的应用.《中国优秀硕士学位论文全文数据库 工程科技I辑》.2010,(第10期),21-23,31. |
| 方铉等.ZnO 一维纳米结构在生物传感方面的研究进展.《长春理工大学学报》.2009,第32卷(第1期),138-141,131. |
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