CN102346074B - Readout circuit biasing structure - Google Patents
Readout circuit biasing structure Download PDFInfo
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- CN102346074B CN102346074B CN2011101893645A CN201110189364A CN102346074B CN 102346074 B CN102346074 B CN 102346074B CN 2011101893645 A CN2011101893645 A CN 2011101893645A CN 201110189364 A CN201110189364 A CN 201110189364A CN 102346074 B CN102346074 B CN 102346074B
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- operational amplifier
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/33—Transforming infrared radiation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
- H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
Abstract
The invention discloses a readout circuit biasing structure, which comprises a first MOS (Metal Oxide Semiconductor) pipe, a second MOS pipe, a reference resistance, a thermistor, an operational amplifier, a temperature compensating resistance, a first current source, a second current source, a third MOS pipe and a fourth MOS pipe, wherein one end of the temperature compensating resistance is connected between the first MOS pipe and the second MOS pipe, the other end of the temperature compensating resistance is connected with the output end of the first current source, the output end of the first current source is connected with the third MOS pipe, the output end of the second current source is connected with the fourth MOS pipe, a drain electrode of the fourth MOS pipe is connected with a grid electrode of the fourth MOS pipe and is connected with a drain electrode of the third MOS pipe, the non-inverting input end of the operational amplifier is connected between the first MOS pipe and the second MOS pipe, the inverting input end of the operational amplifier is connected to the output end of the second current source through a resistance, and a first integral reuse capacitance and a second integral reuse capacitance are connected in parallel between the inverting input end of the operational amplifier and the inverting output end of the operational amplifier.
Description
Technical field
The present invention relates to the infrared focal plane read-out circuit technical field, be specifically related to the sensing circuit bias structure of a kind of TEC of need not (semiconductor cooler).
Background technology
All objects are all launched the heat radiation relevant with substance characteristics with its temperature, and the heat radiation of object is positioned at infrared band mostly near the environment temperature, and wavelength is 1 μ m to about the 24 μ m.Infrared radiation provides the abundant information of objective world, converts sightless infrared radiation to measurable signal, and making full use of these information is targets that people pursue.Infrared focal plane array is the important photoelectric device that obtains scenery infrared radiation information.Since U.S.'s sieve door Air Development Center in 1973 at first proposed to be used for the silicide Schottky barrier detector array of infrared thermal imaging, infrared focal plane detector had obtained development rapidly.Hi-tech with numerous is the same, and infrared technique also is owing to military tight demand traction is able to develop rapidly.Infrared thermoviewer can be equipped all kinds of Strategy & Tactics weapons, is usually used in infrared reconnaissance, early warning, tracking and precise guidance, is to obtain one of major technique of information in electronic warfare, the information war.It also is widely used in fields such as industrial automatic control, medical diagnosis, chemical process monitoring, infrared astronomy except that being applied to traditional military affairs imaging.
The micro-metering bolometer detector is most widely used a kind of infrared focal plane array, and it is a kind of thermistor property detector.Its principle of work is that thermo-sensitive material is transformed into resistance variations to the temperature variation that the infrared radiation of incident produces, through the size of measuring resistance change detection infrared radiation signal.The micro-metering bolometer focal plane arrays (FPA) is to utilize micromachining technology on the silicon sensing circuit, to make heat insulating construction, and forms the micro-metering bolometer as detector cells in the above, realizes single chip architecture.The micro-metering bolometer focal plane arrays (FPA) is as the outstanding person of second generation non-refrigeration focal surface technology; With it is that non refrigerating infrared imaging system that core is made compares with the refrigerating infrared imaging system and has volume advantage little, low in energy consumption; And the ratio of performance to price of system increased substantially, greatly promoted the application during infrared imaging system is in a lot of fields.
Sensing circuit is the integrated treatment circuit of a kind of digital-to-analogue mixed signal of special use, is reading before integrated circuit (ROIC) occurs, and the hybrid circuit of prime amplifier is made up of resistance, electric capacity and the transistor of separation.Very responsive such as high impedance detectors photovoltaic type, extrinsic silicon, platinum silicon and many photoconduction types to electromagnetic interference (EMI), require to be placed on the influence that reduces very much EMI near the place of prime amplifier.Use discrete component to require a large amount of areas, and in a given optics visual field, the number of active lanes that realizes has been proposed harsh restriction.ROIC helps to have reduced the EMI problem.Reading integrated circuit (ROIC) method also provides detector calorifics/mechanical interface, signal Processing and comprises the image charge conversion and the function of gain, frequency band limits and multipath conversion and output driving.Along with integrated circuit technology and the integrated manufacturing technology of development, especially MOS of technology and the maturation of technology, make ROIC obtain swift and violent development.
The function of sensing circuit is to extract the resistance variations of detector thermo-sensitive material, converts electric signal to and carries out the parallel/serial row conversion of pre-process (like integration, amplification, filtering and sampling/maintenance etc.) and signal.Mainly contain CCD type readout circuit type sensing circuit at present.Along with the continuous maturation of CMOS technology, perfect and development, the CMOS sensing circuit becomes the main developing direction of current sensing circuit because of its numerous advantage.
Along with the development in thermal imaging market, the detector of small size, low-power consumption more and more receives the favor in market, and traditional detector is at the fixing underlayer temperature of focal plane of when work.A non-refrigerated infrared detector system that has TEC, only the power consumption of TEC is at 500 to 2000 mW, and volume increases by 3 to 10 cm
3So there is not the non-refrigerated infrared detector system of TEC is the inexorable trend of development.
Having under the situation of TEC, because the influence of thermal capacitance, thermal conductance and unit spontaneous radiation, TCR (temperature-coefficient of electrical resistance) is along with underlayer temperature changes, and the resistance of picture dot also can change.Finally cause signal output to change, had a strong impact on imaging effect with underlayer temperature.Seem particularly significant so study the sensing circuit bias structure of a kind of TEC of need not.
Summary of the invention
To above-mentioned prior art, problem to be solved by this invention is, the sensing circuit bias structure of a kind of TEC of need not is provided, and this circuit is when underlayer temperature changes, and signal output is unaffected.
In order to solve the problems of the technologies described above; The present invention adopts following technical scheme: a kind of sensing circuit bias structure, comprise first metal-oxide-semiconductor, second metal-oxide-semiconductor, reference resistance, thermistor, operational amplifier, and also comprise thermo-compensator; First current source of low temperature drift and second current source; The 3rd metal-oxide-semiconductor and one the 4th metal-oxide-semiconductor, wherein an end of thermo-compensator is connected between first metal-oxide-semiconductor and second metal-oxide-semiconductor, and the other end connects the output terminal of first current source; The output terminal of first current source connects the 3rd metal-oxide-semiconductor; The output terminal of second current source connects the 4th metal-oxide-semiconductor, and the drain and gate of said the 4th metal-oxide-semiconductor is connected and is connected with the drain electrode of the 3rd metal-oxide-semiconductor, and the in-phase input end of operational amplifier is connected between first metal-oxide-semiconductor and second metal-oxide-semiconductor; Inverting input is connected the output terminal of second current source, multiplexing electric capacity of parallelly connected first integral and the multiplexing electric capacity of second integral between the inverting input of said operational amplifier and output terminal through a resistance.
Further, said reference resistance and thermo-compensator are the resistor-type bolometer with the hot short circuit of adjacent mos pipe substrate, and thermistor is to be adjacent the resistor-type bolometer that metal-oxide-semiconductor substrate heat is isolated.
Further, said first metal-oxide-semiconductor is the NMOS pipe, and second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are the PMOS pipe; Wherein, the first metal-oxide-semiconductor grid connects an operational amplifier, and the in-phase input end of this operational amplifier connects the first integrated DAC; The inverting input of this operational amplifier is connected the source electrode of first metal-oxide-semiconductor; Be connected with the second integrated DAC between the source electrode of second metal-oxide-semiconductor and the reference resistance, the grid of second metal-oxide-semiconductor connects another integrated transporting discharging, and the in-phase input end of this integrated transporting discharging connects one the 3rd integrated DAC; Inverting input is connected with the source electrode of second metal-oxide-semiconductor, and the grid of said the 3rd metal-oxide-semiconductor connects the 4th integrated DAC.
Compare with existing sensing circuit bias structure, advantage of the present invention has:
(1) adopts this kind sensing circuit bias structure, need not use TEC, can realize low-power consumption, the non-refrigerated infrared detector system of small size.
(2) adopt this kind sensing circuit bias structure, be provided with thermo-compensator R
Ts, need not outside sheet, the output signal to be done temperature compensation and proofread and correct, reduce the complicacy of system.
(3) adopt this kind sensing circuit bias structure, the positive terminal voltage of integrator amplifier
V B Variation with underlayer temperature is very little, has guaranteed that out-put dynamic range can not receive the influence of underlayer temperature.
(4) adopt this kind sensing circuit bias structure, all suitable to the infrared focus plane of various array size, highly versatile.
Description of drawings
Fig. 1 is the resistance and the temperature variant characteristic of TCR of resistor-type bolometer;
Fig. 2 is traditional sensing circuit bias structure synoptic diagram;
Fig. 3 is the sensing circuit bias structure synoptic diagram among the present invention.
Embodiment
To combine accompanying drawing and embodiment that the present invention is further described below:
As shown in Figure 1, the resistance of resistor-type bolometer and TCR are with the variation characteristic of underlayer temperature, wherein; Curve a representes resistance; Curve b representes TCR, because the influence of thermal capacitance, thermal conductance and unit spontaneous radiation, TCR and resistance are all along with underlayer temperature changes.
To existing sensing circuit bias structure, as shown in Figure 2, when underlayer temperature changes, reference resistance R s and thermistor R
bResistance variation has all taken place, in the time of infrared radiation, produced marking current and when different underlayer temperatures, variation taken place also, shown in (8):
Wherein
V b Be the reference resistance R
bBias voltage,
V s Be thermistor R
sOn bias voltage.
A kind of sensing circuit bias structure that need not TEC of the present invention is as shown in Figure 3: to traditional bias circuit construction, the bias structure among the present invention has increased a thermo-compensator R
Ts, this resistance and reference resistance all are the resistor-type bolometer.Increase by the first current source I of low temperature drift simultaneously
Sink1With the second current source I
Sink2, accomplish conversion to integration current.Shown in (1).
Wherein
T INT Be integral time,
C INT Be integrating capacitor,
C INT_SH1 For integration, adopt multiplexing electric capacity,
V B Be the positive terminal voltage of integrator amplifier,
V A Be the voltage of node A,
R A Be conventional semiconductor resistor.Behind over-sampling,
V B The signal voltage that is eliminated to the end.Magnitude of voltage V in the formula (1)
AFix, its magnitude of voltage is by the second current source I of low temperature drift
Sink2Characteristic decision with the 4th metal-oxide-semiconductor M4 of P type.The operated by rotary motion second current source I
Sink2Current value for flowing through R
AThe several times of electric current, so V
ABe fixed value.
Behind over-sampling,
V B The signal voltage that is eliminated to the end.So final output voltage is:
From formula (2), find out
V A ,
R A ,
T INT ,
C INT And
C INT_SH1 All irrelevant with underlayer temperature, so output voltage
VoutBe mainly reflected in the relation of temperature
V B On the temperature characterisitic of point.
V B Point voltage can have following formula to represent:
Wherein,
V SK ,
V Fid With
V Eb Be the bias voltage of correspondence, this voltage can be provided outward by sheet, also can biasing be provided by integrated DAC on the sheet.
R b Be reference resistance, promptly with the resistor-type bolometer of the hot short circuit of substrate.
R Ts Being thermo-compensator, also is the resistor-type bolometer with the hot short circuit of substrate.
RsBe thermistor, with the resistor-type bolometer of substrate heat isolation.
When extraneous radiation and underlayer temperature change,
V B The voltage of point can be expressed from the next:
(4)
Wherein α 1 (Tsub) is the reference resistance R b and the second integrated DAC R
DACThe combination back is TCR effectively, and α 2 (Tsub) is the TCR of thermistor Rs, and α 3 (Tsub) is the TCR of thermo-compensator Rts.The three is relevant with underlayer temperature.T1 is the initial temperature of substrate, and T2 is thermistor R
sInitial temperature, Δ Tsub is the temperature rise of substrate.Δ T is extraneous radiation-induced thermistor R
sTemperature rise.
Through regulating
V SK ,
V Fid With
V Eb Value, can so that following formula set up:
Therefore,
V B The voltage of point can be converted into formula (6):
Since the existence of self-heating effect, thermistor R
sTemperature than underlayer temperature a temperature rise is arranged, as thermistor R
sResistance be 60K, V
FidBe 1.2V, offset time is every frame 20 μ s, thermal conductance G=1 * 10
-7W/K, thermal capacitance C=1 * 10
-8In the time of J/K, thermistor R
sOn temperature rise be 0.3K.α 2 (Tsub) has changed 0.2% than α 3 (Tsub), i.e. α 3 (Tsub) ≈ α 2 (Tsub).So it is final
V B The voltage of point is:
(7)
When underlayer temperature was 300K, the representative value of α 2 (Tsub) was-0.02, and when underlayer temperature changed 20K, α 2 (Tsub) changed 0.002.So
V B The voltage of point is very little with the variation of underlayer temperature.
In addition, magnitude of voltage Vr1 fixes in the formula (7), and its magnitude of voltage is by the first current source I of low temperature drift
Sink1, the P type characteristic and the 4th integrated DAC V of the 3rd metal-oxide-semiconductor M3
DAC3Voltage decision.The operated by rotary motion first current source I
Sink1Current value be the several times that flow through the electric current of thermo-compensator Rts, so Vr1 is a fixed value.
The present invention all can use the infrared focal plane array of different array size, for example: 160*120,320*240,384*288 or the like.
Adopt the sensing circuit bias structure of a kind of TEC of need not of the present invention; To remove the use of TEC; Realize low-power consumption, the non-refrigerated infrared detector system of small size has guaranteed that simultaneously out-put dynamic range can not receive the influence of underlayer temperature; And need not outside sheet, the output signal to be done temperature compensation and proofread and correct, reduce the complicacy of system.
Claims (1)
1. a sensing circuit bias structure comprises first metal-oxide-semiconductor (M1), second metal-oxide-semiconductor (M2), reference resistance (R
b), thermistor (R
s), first operational amplifier, it is characterized in that: also comprise thermo-compensator (R
Ts), the first current source (I of low temperature drift
Sink1) and the second current source (I
Sink2), the 3rd metal-oxide-semiconductor (M3) and one the 4th metal-oxide-semiconductor (M4), wherein thermo-compensator (R
Ts) an end be connected between first metal-oxide-semiconductor (M1) and second metal-oxide-semiconductor (M2), the drain electrode of first metal-oxide-semiconductor (M1) connects the drain electrode of second metal-oxide-semiconductor (M2), thermo-compensator (R
Ts) the other end connect the first current source (I
Sink1) output terminal, the first current source (I
Sink1) output terminal connect the source electrode of the 3rd metal-oxide-semiconductor (M3), the second current source (I
Sink2) output terminal connect the source electrode of the 4th metal-oxide-semiconductor (M4); The drain and gate of the 4th metal-oxide-semiconductor (M4) is connected and is connected with the drain electrode of the 3rd metal-oxide-semiconductor (M3); The in-phase input end of first operational amplifier is connected between first metal-oxide-semiconductor (M1) and second metal-oxide-semiconductor (M2), and the inverting input of first operational amplifier is through a resistance (R
A) be connected the second current source (I
Sink2) output terminal, the multiplexing electric capacity of parallelly connected first integral between the inverting input of first operational amplifier and output terminal (
C INT_SH1 ) and the multiplexing electric capacity of second integral (
C INT_SH2 ); Said reference resistance (R
b) and thermo-compensator (R
Ts) be the resistor-type bolometer with the hot short circuit of adjacent mos pipe substrate, thermistor (R
s) for being adjacent the resistor-type bolometer that metal-oxide-semiconductor substrate heat is isolated; Said first metal-oxide-semiconductor (M1) is the NMOS pipe; Second metal-oxide-semiconductor (M2), the 3rd metal-oxide-semiconductor (M3) and the 4th metal-oxide-semiconductor (M3) are the PMOS pipe; Wherein, first metal-oxide-semiconductor (M1) grid connects two operational amplifiers, and the in-phase input end of second operational amplifier connects the first integrated DAC (V
DAC1), the inverting input of second operational amplifier is connected the source electrode of first metal-oxide-semiconductor (M1), thermistor (R
s) be connected between the drain electrode of source electrode and the 3rd metal-oxide-semiconductor (M3) of first metal-oxide-semiconductor (M1) source electrode of second metal-oxide-semiconductor (M2) and reference resistance (R
b) between be connected with the second integrated DAC (R
DAC2), the grid of second metal-oxide-semiconductor (M2) connects an integrated transporting discharging, and the in-phase input end of this integrated transporting discharging connects one the 3rd integrated DAC (V
DAC), the inverting input of this integrated transporting discharging is connected with the source electrode of second metal-oxide-semiconductor (M2), and the grid of said the 3rd metal-oxide-semiconductor (M3) connects the 4th integrated DAC (V
DAC3).
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| CN2011101893645A CN102346074B (en) | 2011-07-07 | 2011-07-07 | Readout circuit biasing structure |
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| CN102346074B true CN102346074B (en) | 2012-08-08 |
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| CN102735344B (en) * | 2012-07-10 | 2014-04-30 | 电子科技大学 | Reading circuit of infrared focal plane array detector |
| CN103234642B (en) * | 2013-04-15 | 2015-07-22 | 电子科技大学 | Integrating pre-circuit of reading circuit in infrared focal plane array detector |
| CN104251741B (en) * | 2014-09-18 | 2017-07-18 | 电子科技大学 | A kind of self adaptation infrared focal plane array reading circuit |
| CN104819779B (en) * | 2015-04-03 | 2018-05-22 | 无锡艾立德智能科技有限公司 | A kind of micro-metering bolometer type infrared reading circuit with biasing thermal compensation function |
| CN105181754B (en) * | 2015-06-29 | 2019-02-12 | 电子科技大学 | Offset-type resistance-type integrated gas sensors array and preparation method thereof |
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| US6953932B2 (en) * | 1999-10-07 | 2005-10-11 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
| CN101943606A (en) * | 2010-08-20 | 2011-01-12 | 电子科技大学 | Infrared focal plane reading circuit and method thereof |
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