CN102339772A - Method for detecting defects of through holes - Google Patents
Method for detecting defects of through holes Download PDFInfo
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- CN102339772A CN102339772A CN2010102332338A CN201010233233A CN102339772A CN 102339772 A CN102339772 A CN 102339772A CN 2010102332338 A CN2010102332338 A CN 2010102332338A CN 201010233233 A CN201010233233 A CN 201010233233A CN 102339772 A CN102339772 A CN 102339772A
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Abstract
The invention provides a method for detecting defects of through holes. The method comprises the following steps of: carrying out heat-treatment on wafers with the through holes; carrying out wet-etching on the through holes; and detecting the through holes on the wafers to obtain the gray scale of the through holes by using an electron-beam defect scanner. When the gray scale of the through holes is less than a set gray scale, the through holes are normal through holes; and when the gray scale of the through holes is more than the set gray scale, the through holes are under-etching through holes. With the adoption of the method provided by the invention for detecting the through holes, the through holes which even have an smaller size and defects, i.e. under-etching, can be clearly determined.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of method that detects defective hole.
Background technology
At present, the electron beam detection technique is through electron beam defective scanner (E-Beam defect scan tool), the detection means of coming detecting defects with the electron beam of vernier focusing.Its testing process is: one, produce electron beam through high pressure, irradiate wafer inspires (being mainly secondary electron) such as secondary electron, backscattered electron and auger electrons; Two, secondary electron is by detector induction and be sent to image processor; Three, handle the back and form enlarged image.The electron beam detection technique is as one of detection means of catching wafer defect, and its resolution is high, is often used in faults in material such as detecting the through hole undercut.
Along with semiconductor fabrication is advanced to more advanced deep sub-micron technique, the number of plies of semiconductor metal line is more and more, and corresponding via etch process is also many more, and the size that is accompanied by through hole is along with the designs size is progressively dwindled.Be fabricated to example with DRAM, when memory space developed into 512M by 4M, design rule narrowed down to 0.16 μ m by 1 μ m, and wherein the size of through hole has also dropped to 0.25 μ m from 0.8 μ m.Clear size of opening is more little, and the difficulty of etching is also increasing, if etching is not in place, the open circuit between metal line just possibly occur, directly causes component failure.So-called via etch; Etch the process of a series of through holes exactly in the interlayer film between two-layer interconnect metallization lines; The interconnecting metal that is used between the double layer of metal line is inserted in the through hole the inside, is linked to be thousands of transistor in the device loop with certain function through these metal wires.The interlayer film all is various dielectric films usually, and therefore, via etch belongs to the dielectric film etching.
It among Fig. 1 the comparison sketch map of normal through-hole and undercut through hole.Normal through-hole 101 stops on etch stop layer (stop layer) 103 for etching intermetallic dielectric layer (IMD) 102; Open the metal level 104 that etch stop layer 103 manifests lower floor then, thereby form normal through-hole 101.Because the restriction of factors such as etching apparatus, the situation of undercut can appear in the through hole that has, and promptly etching stop layer 103 is not opened; Thereby do not manifest the metal level 104 of lower floor yet; That is to say, in this case, even insert the metal that is used to interconnect in the through hole; Also can't connect two metal levels up and down, the open circuit between metal line promptly occur.The through hole 100 of normal through-hole 101 and undercut is compared; The secondary electron number that detector receives is different; The via bottoms of undercut is the etch stop layer of insulation, and the secondary electron that inspires can't conduct away, so can reflect to detector; The number of electrons that detector receives is many more, and then enlarged image is bright more; Normal via bottoms is opened; Manifest the metal level of lower floor; Therefore the secondary electron that inspires can be conducted away, and compares with the through hole of undercut, and reflection will lack for the secondary electron of detector; The number of electrons that receives of detector is just lacked relatively so, and the image that finally obtains is just dark relatively.
Based on foregoing description, when the bright dark difference of the image of undercut through hole and normal through-hole acquires a certain degree, be assumed to be δ, then electron beam defective scanner can detect this difference, is the through hole of undercut thereby which is determined.But; Along with constantly reducing of clear size of opening; For less via openings, no matter normally still be that the quantity variance that secondary electron that excites and reflection are come out is very little in the undercut through hole; Therefore there is not notable difference basically in the bright dark degree that causes normal through-hole and undercut through hole to be reflected on the image, so be difficult to confirm that therefrom which is the through hole of undercut.
Summary of the invention
In view of this, the technical problem of the present invention's solution is: how to adopt electron beam defective scanner to detect the defective hole of undercut.
For solving the problems of the technologies described above, technical scheme of the present invention specifically is achieved in that
The invention discloses a kind of method that detects defective hole, this method comprises:
Wafer to having through hole is heat-treated;
Said through hole is carried out wet etching;
Adopt electron beam defective scanner, the through hole on the wafer detected obtaining the gray scale of through hole, when the gray scale of through hole when setting gray scale, said through hole is a normal through-hole, when the gray scale of through hole when setting gray scale, said through hole is the undercut through hole.
Said heat treatment comprises heat-treats wafer in oxygen atmosphere.
Said heat treatment comprises heat-treats wafer in the fluorine gas environment.
Said heat treated temperature is 100～300 degrees centigrade, and the time is 10～50 minutes.
Said heat treated temperature is preferably 150～200 degrees centigrade, and the time is 20～40 minutes.
Adopt hydrofluoric acid that said through hole is carried out wet etching, etch period is 60～90 seconds.
The ratio of said hydrofluoric acid and water is 1: 400～1: 200.
The pixel model of said electron beam defective scanner is 20～50 nanometers; Electron beam energy is 1500～2000 electronvolt; Electric current is 14～30 to receive peace.
Visible by above-mentioned technical scheme, the present invention heat-treats the wafer with through hole, then said through hole is carried out wet etching; Get rid of the part metals of normal through-hole bottom; Make normal through-hole than the through hole of undercut, depth difference between the two is bigger and since the secondary electron that excites in the normal through-hole than before the etching not more difficulty reflect out; So the image brightness that finally obtains is than etching is not darker before; When the bright dark difference of the image of undercut through hole and normal through-hole acquired a certain degree δ, then electron beam defective scanner can detect this difference, was standard with predefined gray value; To confirm as normal through-hole less than the through hole of setting gray value, will confirm as the through hole of undercut greater than the through hole of setting gray value.Adopt the method for detection defective hole of the present invention, even, also can detect exactly for the through hole of smaller szie.
Description of drawings
Fig. 1 is the comparison sketch map of normal through-hole and undercut through hole;
The schematic flow sheet of the method that Fig. 2 handles through hole for the embodiment of the invention;
Fig. 3 is through after the processing method of the present invention, the comparison sketch map of normal through-hole and undercut through hole;
Fig. 4 is the bright dark difference sketch map of the image of undercut through hole and normal through-hole;
Fig. 5 is the undercut through hole of electron beam defective scanner demonstration and the image sketch map of normal through-hole.
Embodiment
For make the object of the invention, technical scheme, and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
For making the through hole of normal through-hole than undercut; Depth difference between the two is bigger, thereby makes both bright dark difference of image more obvious, need be after forming through hole; Continue to remove the part metals of normal through-hole bottom; Make normal through-hole have the bigger degree of depth, correspondingly, have darker image.Increased the bright dark difference of image between normal through-hole and the undercut through hole, just can confirm also which is the undercut through hole with defective.
The embodiment of the invention is as shown in Figure 2 to the schematic flow sheet of the method that through hole is handled, and may further comprise the steps:
Wherein, heat treated temperature is 100～300 degrees centigrade, and the time is 10～50 minutes; Preferably, optimum temperature is 150～200 degrees centigrade, and the time is 20～40 minutes;
Usually, metal wire is a copper, thus need be under higher temperature, with metallic copper become copper compound and with its removal, so multiple implementation is arranged here:
For instance, a kind of in oxygen atmosphere, wafer is heat-treated, metallic copper becomes cupric oxide; A kind of in the fluorine gas environment, wafer is heat-treated, metallic copper becomes copper fluoride; Certainly implementation is not limited to above-mentioned two kinds, as long as can form the compound of copper, finally being corroded to remove gets final product.
For the compound of copper, generally adopt the compound of hydrofluoric acid and copper to react and remove.Wherein, the ratio of hydrofluoric acid and water is 1: 400～1: 200; The wet method removal time is 60～90 seconds.
Need to prove; In above-mentioned processing procedure, the through hole 100 of undercut does not manifest the metal level 104 of lower floor, and is as shown in Figure 1; So the through hole 100 of undercut can not change in heat treatment process, above-mentioned processing is only carried out to normal through-hole.And; After handling; The metal level 104 of the lower floor corresponding with normal through-hole is removed by part; Because the back extended meeting continues to fill metal in through hole, in lower metal layer 104 repairings that this part is removed, so above-mentioned treatment step can not have influence on the wafer the performance of the semiconductor device that will form.Simultaneously, when adopting the hydrofluoric acid wet method to remove metallic compound, can not have influence on the undercut through hole, promptly hydrofluoric acid can not erode to the etch stop layer of undercut via bottoms, and the degree of depth of undercut through hole is changed yet.Wherein, etch stop layer is generally nitration case.
Through above-mentioned processing, the metal of normal through-hole bottom is removed by part, and its depth ratio normal condition is darker, as shown in Figure 3, and Fig. 3 is through after the processing method of the present invention, the comparison sketch map of normal through-hole and undercut through hole.In conjunction with Fig. 4, the bright dark difference of image of undercut through hole and normal through-hole is described.Abscissa is represented through-hole spacing among Fig. 4, the bright dark degree of ordinate presentation video, i.e. and gray scale, gray scale is more little, and then image is dark more.Before without processing of the present invention, undercut through hole (the right) is δ with the bright dark difference of image of normal through-hole (left side)
0, this difference is not enough to detected by electron beam defective scanner, after processing of the present invention; Normal through-hole (left side) has the darker degree of depth, and therefore the secondary electron number that reflects relatively still less is reflected on the image then darker; Image brightness with the through hole (the right) of undercut; Form bigger difference, when this difference reaches δ, then can clearly be detected by electron beam defective scanner.For distinguishing the through hole of normal through-hole and undercut, preestablish a gray value, when the gray scale of through hole during, confirm that said through hole is a normal through-hole less than the setting gray value; When the gray scale of through hole when setting gray value, confirm that said through hole is a normal through-hole.Therefore, those have the pairing through hole of image of big brightness greater than setting gray value, then are the through hole of undercut.
Wherein, said setting gray value is according to the difference of semiconductor device and different, that is, the corresponding different said gray values of semiconductor device is different, and in addition, for similar semiconductor device, because the difference of technology, setting gray value also may be different.Those skilled in the art can obtain said setting gray value through the experiment of limited number of time; As repeatedly measure gray value and the gray value of improper through hole (through hole of undercut) of the normal through-hole of certain semiconductor device; Get the average of gray value of average and improper through hole of the gray value of normal through-hole respectively, the difference of two averages is said setting gray value.
Preferably, selecting the pixel model of electron beam defective scanner is 20～50 nanometers; Electron beam energy is 1500～2000 electronvolt; Electric current is 14～30 to receive peace (nA).The electron beam defective scanner of setting under this parameter can be known the through hole that detects undercut effectively more.
In sum, adopt after the method processing of the present invention,, also can clearly see the through hole of undercut through electron beam defective scanner even for the littler through hole of size, as shown in Figure 5.Fig. 5 is the undercut through hole of electron beam defective scanner demonstration and the image sketch map of normal through-hole.Wherein, indicated brighter image is the undercut through hole in the circle, and darker image is a normal through-hole relatively on every side.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being made, is equal to replacement, improvement etc., all should be included within the scope that the present invention protects.
Claims (8)
1. method that detects defective hole, this method comprises:
Wafer to having through hole is heat-treated;
Said through hole is carried out wet etching;
Adopt electron beam defective scanner, the through hole on the wafer detected obtaining the gray scale of through hole, when the gray scale of through hole when setting gray scale, said through hole is a normal through-hole, when the gray scale of through hole when setting gray scale, said through hole is the undercut through hole.
2. the method for claim 1 is characterized in that, said heat treatment comprises heat-treats wafer in oxygen atmosphere.
3. the method for claim 1 is characterized in that, said heat treatment comprises heat-treats wafer in the fluorine gas environment.
4. like claim 2 or 3 described methods, it is characterized in that said heat treated temperature is 100～300 degrees centigrade, the time is 10～50 minutes.
5. method as claimed in claim 4 is characterized in that, said heat treated temperature is preferably 150～200 degrees centigrade, and the time is 20～40 minutes.
6. method as claimed in claim 5 is characterized in that, adopts hydrofluoric acid that said through hole is carried out wet etching, and etch period is 60～90 seconds.
7. method as claimed in claim 6 is characterized in that, the ratio of said hydrofluoric acid and water is 1: 400～1: 200.
8. the method for claim 1 is characterized in that, the pixel model of said electron beam defective scanner is 20～50 nanometers; Electron beam energy is 1500～2000 electronvolt; Electric current is 14～30 to receive peace.
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Cited By (4)
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| CN103500720A (en) * | 2013-09-30 | 2014-01-08 | 上海华力微电子有限公司 | Testing structure and testing method for matching degree of electron beam flaw scanner |
| CN105826249A (en) * | 2016-04-11 | 2016-08-03 | 京东方科技集团股份有限公司 | Metal layer manufacturing method, functional substrate and manufacturing method thereof, and display device |
| CN107731704A (en) * | 2017-10-10 | 2018-02-23 | 信利（惠州）智能显示有限公司 | Via is against angle detection method and device |
| CN110634759A (en) * | 2019-09-03 | 2019-12-31 | 武汉新芯集成电路制造有限公司 | Method for detecting wet etching defects |
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| CN110634759A (en) * | 2019-09-03 | 2019-12-31 | 武汉新芯集成电路制造有限公司 | Method for detecting wet etching defects |
| CN110634759B (en) * | 2019-09-03 | 2022-02-25 | 武汉新芯集成电路制造有限公司 | Method for detecting wet etching defects |
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