CN102336567A - Ternary system high-temperature piezoelectric ceramic of magnesium bismuth titanate, bismuth zinc-based perovskite and lead titanate and preparation method thereof - Google Patents
Ternary system high-temperature piezoelectric ceramic of magnesium bismuth titanate, bismuth zinc-based perovskite and lead titanate and preparation method thereof Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 title abstract description 5
- ONVGHWLOUOITNL-UHFFFAOYSA-N [Zn].[Bi] Chemical compound [Zn].[Bi] ONVGHWLOUOITNL-UHFFFAOYSA-N 0.000 title abstract 2
- SKKNACBBJGLYJD-UHFFFAOYSA-N bismuth magnesium Chemical compound [Mg].[Bi] SKKNACBBJGLYJD-UHFFFAOYSA-N 0.000 title abstract 2
- 229910002115 bismuth titanate Inorganic materials 0.000 title abstract 2
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000010287 polarization Effects 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 238000000498 ball milling Methods 0.000 claims abstract description 5
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 239000002253 acid Substances 0.000 claims description 31
- IYNWNKYVHCVUCJ-UHFFFAOYSA-N bismuth Chemical compound [Bi].[Bi] IYNWNKYVHCVUCJ-UHFFFAOYSA-N 0.000 claims description 25
- SXSVTGQIXJXKJR-UHFFFAOYSA-N [Mg].[Ti] Chemical compound [Mg].[Ti] SXSVTGQIXJXKJR-UHFFFAOYSA-N 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 11
- 238000001354 calcination Methods 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 229910052573 porcelain Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229920002545 silicone oil Polymers 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- -1 metals ion Chemical class 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 14
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 abstract 1
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000005501 phase interface Effects 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 description 22
- UDRRLPGVCZOTQW-UHFFFAOYSA-N bismuth lead Chemical compound [Pb].[Bi] UDRRLPGVCZOTQW-UHFFFAOYSA-N 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- QAKMMQFWZJTWCW-UHFFFAOYSA-N bismuth titanium Chemical compound [Ti].[Bi] QAKMMQFWZJTWCW-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Abstract
The invention discloses a ternary system high-temperature piezoelectric ceramic of magnesium bismuth titanate, bismuth zinc-based perovskite and lead titanate and a preparation method thereof. The composition of the piezoelectric ceramic is expressed by a general formula (1-n) [uBi(Mg0.5Ti0.5)O3 + vBi(ZnxDy)O3 + (1-u-v) PbTiO3] + nM; and the preparation method comprises the steps of mixing, ball milling, pre-sintering, blank making, sintering, silver coating and polarization. The composition of the piezoelectric ceramic has perovskite structure and has similar phase interface of a rhombic ferroelectric phase and a foursquare ferroelectric phase, so the piezoelectric ceramic has excellent piezoelectric performance and high Curie temperature, is more suitable for high-temperature field, and has low dielectric loss; the electric polarization process is easier and more convenient; and the piezoelectric ceramic can be prepared by adopting a preparation technology of the traditional piezoelectric ceramic, particularly adopting cheap industrial raw materials, and has practicability.
Description
One, technical field
The present invention relates to a kind of piezoelectric ceramics and preparation method thereof, exactly is titanium magnesium acid bismuth-bismuth zinc-base uhligite-lead titanate three component system high-temperature piezoelectric pottery and preparation method thereof, belongs to electronic devices and components manufacturing technology field.
Two, background technology
The high-temperature piezoelectric stupalith has been widely used in numerous scientific researches and industrial sectors such as aerospace, automobile, petrochemical industry, metallurgy, address exploration.Along with rapid development of science and technology, many electronicss propose requirements at the higher level to the usage range and the applied environment of piezoelectric ceramic devices.It is considerably less that at present excellent property, use temperature are higher than 400 ℃ high-temperature piezoelectric stupalith.For a long time, monocrystalline piezoelectric material such as LiNbO
3Monocrystalline has become the important component part of high-temperature piezoelectric material owing to have good piezoelectric property and high temperature stability, but the monocrystalline piezoelectric material complex process, and cost is very high, makes this material be difficult to wide popularization and application.It is simple that people hope to obtain technology, the high-temperature piezoelectric stupalith that cost is low and piezoelectric property is good.
The piezoceramic material that has at present than high-curie temperature can be divided into the piezoceramic material of calcium titanium ore structure and the piezoceramic material of non-calcium titanium ore structure basically on structure.And the latter such as tungsten bronze structure with contain bismuth laminated (CN101265093B, CN1239431C), though have high Curie temperature, yet its piezoelectric activity is not enough, piezoelectric constant is low and bigger anisotropy is arranged, and greatly limits its application.In having the piezoelectric ceramics of calcium titanium ore structure, though be the piezoelectric ceramics superior performance of base with Pb-based lanthanumdoped zirconate titanates-lead titanate, Tc is difficult to above 400 ℃.Remove this, study the more high curie point uhligite piezoelectric ceramics that has at present and mainly contain scandium acid bismuth-lead titanate, and the two component system solid solution ceramic material of titanium magnesium acid bismuth-lead titanate.Though the former has high Curie temperature, suitable piezoelectric property and electromechanical coupling performance and be used as candidate target (W.Zhao, X. Wang, J.Hao, H. Wen, L.Li, J.Am.Ceram.Soc., 89, the 1200-4 (2006) of high-temperature piezoelectric stupalith; CN101857432), obtain than extensive studies.Yet its starting material Sc
2O
3Cost an arm and a leg, be difficult to obtain large-scale industrialization and use; Though the latter also has high Curie temperature, yet the specific conductivity of the piezoelectric ceramics of this composition is higher, and dielectric loss is high, is difficult to polarization, although can improve to a certain extent through mixing, is difficult to take into account its over-all properties.
Bismuth zinc-base uhligite such as titanium zincic acid bismuth, niobic zincic acid bismuth etc.; Has the calcium titanium ore structure that is similar to titanium magnesium acid bismuth and scandium acid bismuth; Have simultaneously than the better insulation characterisitic of titanium magnesium acid bismuth, it is same can to form sosoloid with lead titanate, and the Tc that significantly improves of acquisition.Therefore, titanium magnesium acid bismuth, bismuth zinc-base uhligite and lead titanate form ternary system piezoelectric ceramics sosoloid, and be expected to obtain higher Tc, thereby improve the high-temperature stability of piezoelectric ceramics, and lower dielectric loss and easier electropolarization technology.Also not seeing in the regrettably existing document has titanium magnesium acid bismuth-bismuth zinc-base uhligite-lead titanate to form the electrical property of ternary system solid solution body piezoelectric ceramics and preparation technology's research report.
Three, summary of the invention
The present invention is for avoiding above-mentioned existing in prior technology weak point, and a kind of have good piezoelectric property, dielectric loss is low, Tc is high, cheap titanium magnesium acid bismuth-bismuth zinc-base uhligite-lead titanate three component system high-temperature piezoelectric pottery and preparation method thereof are provided.This ternary system piezoelectric ceramics is formed and is had calcium titanium ore structure and have the accurate homotype phase boundary of rhombus ferroelectric phase and cubic ferroelectric phase.
The technical scheme that technical solution problem of the present invention is adopted is:
The characteristics of titanium magnesium acid bismuth of the present invention-bismuth zinc-base uhligite-lead titanate three component system high-temperature piezoelectric pottery are: its composition is expressed by following general formula (1):
(1-n)[uBi(Mg
0.5Ti
0.5)O
3+v?Bi(Zn
xD
y)O
3+(1-u-v)PbTiO
3]+nM..................(1)
N in the general formula (1), u, v, x, y are each element shared x in material component, and value is all less than 1,0≤n＜0.05,0＜u＜1,0＜v＜1, and 2x+ay=3, and wherein a is the valence number of element D;
Wherein, M is selected from one or more in the MOX of Cu, Fe, Mn, Nd, Sm, La, and when M was multiple MOX, the nM in the general formula (1) represented with general formula (2):
n(m
1M
1+m
2M
2+……+m
mM
m)..............................(2)
General formula (2) expression M is made up of m kind MOX, respectively by M
1, M
2..., M
mExpression; m
1Expression M
1Account for the x of M, by that analogy, m
1+ m
2+ ...+m
m=1;
D is selected from Ti
4+, Zr
4+, Nb
5+, Ta
5+, W
6+A kind of in the metals ion;
The preparation method of titanium magnesium acid bismuth of the present invention-bismuth zinc-base uhligite-lead titanate three component system high-temperature piezoelectric pottery; Comprise mixing and ball milling, pre-burning, making blank, sintering, quilt silver and polarization; It is characterized in that: said mixing and ball milling is each raw materials mix with proportional quantity, is that the medium wet ball mill got wet feed in 6-12 hour with the deionized water; Said pre-burning is that said wet feed drying is placed in the alumina crucible in 800-950 ℃ of calcining 1-4 hour, and calcining is accomplished back repetition wet ball mill and calcining process once, obtains the precalcining powder; Said making blank is to be medium wet ball mill 6-12 hour with the deionized water with gained precalcining powder, and the 100-150 mesh sieve is crossed in dry back, and is blank at the forming under the pressure of 50-200MPa; Said sintering is that the gained blank is placed two crucibles of putting upside down, in air, adopts the powder entrapping method to get the porcelain base in 1000-1150 ℃ of sintering 1-4 hour under the normal pressure; Said is the porcelain base to be polished in silicone oil, to be polarized after the silver electrode handled 5-15 minute by silver, polarizing voltage 3-6kV/mm, and the polarization temperature is 25-120 ℃.
The preparing method's of titanium magnesium acid bismuth of the present invention-bismuth zinc-base uhligite-lead titanate three component system high-temperature piezoelectric pottery characteristics are: the temperature rise rate in the said sintering process is 3-6 ℃/min.
Described proportional quantity is meant the amount that takes by weighing after the ratio metering in composition shown in general formula (1) and the general formula (2) and qualification thereof.
Concrete preparation technology is following:
1, each raw material is selected from Bi by the composition and the proportioning of general structure
2O
3, ZnO, MgO, Pb
3O
4, Nb
2O
5, Ta
2O
5, WO
3, ZrO
2, TiO
2, CuO, Fe
2O
3, MnO
2, Nd
2O
3, Sm
2O
3, La
2O
3, according to the composition of general formula (1) and the ratio batching of qualification;
2, confected materials is medium with the deionized water, and the wet ball mill through 6-12 hour gets wet feed, after the gained wet feed drying in alumina crucible in 800-950 ℃ of calcining 1-4 hour, repeat wet ball mill and calcining process once, obtain the precalcining powder;
3, the precalcining powder is medium wet ball mill 6-12 hour after crushed with the deionized water, and dry back is crossed the 100-150 mesh sieve and is blank at the forming under the pressure of 50-200MPa;
4, the gained blank is placed two crucibles of putting upside down, in air, adopt the powder entrapping method to get the porcelain base in 1000-1150 ℃ of sintering 1-4 hour under the normal pressure, temperature rise rate is 3-6 ℃/min;
5, the porcelain base is polished by processing 5-15 minute that in silicone oil, polarizes after the silver electrode, polarizing voltage 3-6kV/mm, the polarization temperature is 25-150 ℃.
6, according to the standard of IRE the ternary system piezoelectric ceramics sample for preparing is carried out the test of piezoelectricity and electromechanical coupling performance.
Compared with present technology, beneficial effect of the present invention is embodied in:
1, ternary system piezoelectric ceramics of the present invention has more excellent piezoelectric property, and high Curie temperature makes it be more suitable for the high temperature field.
2, ternary system piezoelectric ceramics of the present invention has lower dielectric loss (electrical insulation characteristics of improvement) with respect to traditional titanium magnesium acid bismuth-lead titanate piezoelectric ceramics, and electropolarization technology is easier and convenient.
3, ternary system piezoelectric ceramics of the present invention can adopt the particularly cheap industrial feedstock production of technology of preparing of conventional piezoelectric pottery with respect to traditional scandium acid bismuth-lead titanate piezoelectric ceramics, has more practicality.
Four, description of drawings
Fig. 1 is the X ray diffracting data of the ternary system piezoelectric ceramic of the embodiment of the invention 2 preparations.
Fig. 2 is the stereoscan photograph of the ternary system piezoelectric ceramic of the embodiment of the invention 5 preparations.
Five, embodiment
In the practical implementation, the composition of titanium magnesium acid bismuth-bismuth zinc-base uhligite-lead titanate three component system high-temperature piezoelectric pottery is represented by following general formula (1):
(1-n)[uBi(Mg
0.5Ti
0.5)O
3+vBi(Zn
xD
y)O
3+(1-u-v)PbTiO
3]+nM..................(1)
N in the general formula (1), u, v, x, y are each element shared x in material component, and value is all less than 1,0≤n＜0.05,0＜u＜1,0＜v＜1, and 2x+ay=3, and wherein a is the valence number of element D;
M is selected from one or more in the MOX of Cu, Fe, Mn, Nd, Sm, La, and when M was multiple MOX, the nM in the general formula (1) represented with general formula (2):
n(m
1M
1+m
2M
2+......+m
mM
m)..............................(2)
M is made up of m kind MOX, respectively by the M in the general formula (2)
1, M
2..., M
mExpression; m
1Expression M
1Account for the x of M, by that analogy, m
1+ m
2+ ...+m
m=1.
D is selected from Ti
4+, Zr
4+, Nb
5+, Ta
5+, W
6+A kind of in the metals ion;
The preparation method of titanium magnesium acid bismuth of the present invention-bismuth zinc-base uhligite-lead titanate three component system high-temperature piezoelectric pottery is:
1, with commercially available chemical pure Bi
2O
3, ZnO, MgO, Pb
3O
4, Nb
2O
5, Ta
2O
5, WO
3, ZrO
2, TiO
2, CuO, Fe
2O
3, MnO
2, Nd
2O
3, Sm
2O
3, La
2O
3Be raw material, prepare burden according to the composition of general formula (1) and general formula (2);
2, confected materials is medium with the deionized water, and the wet ball mill through 6-12 hour gets wet feed, after the gained wet feed drying in alumina crucible in 800-950 ℃ of calcining 1-4 hour, repeat wet ball mill and calcining process once, obtain the precalcining powder;
3, the precalcining powder is medium wet ball mill 6-12 hour after crushed with the deionized water, and dry back is crossed the 100-150 mesh sieve and is blank at the forming under the pressure of 50-200MPa;
4, the gained blank is placed two crucibles of putting upside down, in air, adopt the powder entrapping method to get the porcelain base in 1000-1150 ℃ of sintering 1-4 hour under the normal pressure, temperature rise rate is 3-6 ℃/min;
5, the porcelain base is polished by processing 5-15 minute that in silicone oil, polarizes after the silver electrode, polarizing voltage 3-6kV/mm, the polarization temperature is 25-150 ℃.
6, according to the standard of IRE the ternary system piezoelectric ceramics sample for preparing is carried out the test of piezoelectricity and electromechanical coupling performance.
Specific embodiment is following:
Embodiment 1:
U=0.666, v=0.044, n=0, filling a prescription is 0.666Bi (Mg
0.5Ti
0.5) O
3+ 0.044Bi (Zn
0.5Ti
0.5) O
3+ 0.29PbTiO
3
Embodiment 2:
U=0.625, v=0.11, n=0, filling a prescription is 0.625Bi (Mg
0.5Ti
0.5) O
3+ 0.11Bi (Zn
0.5Ti
0.5) O
3+ 0.265PbTiO
3
Embodiment 3:
U=0.575, v=0.15, n=0, filling a prescription is 0.575Bi (Mg
0.5Ti
0.5) O
3+ 0.15Bi (Zn
0.5Ti
0.5) O
3+ 0.275PbTiO
3
Embodiment 4:
U=0.625, v=0.11, n=0.005, filling a prescription does
0.995[0.625Bi(Mg
0.5Ti
0.5)O
3+0.11Bi(Zn
0.5Ti
0.5)O
3+0.265PbTiO
3]+0.005MnO
2
Preparation technology as previously mentioned; Calcined temperature is 850 ℃, 1030 ℃ of sintering temperatures, the performance such as the table 1 of the three component system high-temperature piezoelectric that makes pottery; U=0.625 among the embodiment 2 wherein; V=0.11, the X ray diffracting data of the piezoelectric ceramics of n=0 is as shown in Figure 1, shows that its structure is the calcium titanium ore structure of the two-phase coexistent of rhombus ferroelectric phase and cubic ferroelectric phase.
Can find out that from table 1 titanium magnesium acid bismuth-titanium zincic acid bismuth-lead titanate ternary system piezoelectric ceramics has high Curie temperature, titanium magnesium acid bismuth-lead titanate binary system (～420 ℃) of reporting in the document relatively, Tc effectively improves; In addition, it can also be seen that titanium zincic acid bismuth to the substituting of titanium magnesium acid bismuth, and a small amount of MnO
2Doping, can effectively reduce the dielectric loss of material.
Table 1
| d 33(pC/N) | kp(％) | tanδ | ε 33 T/εo | T c(℃) | |
| Execute example 1 | 192 | 29 | 0.030 | 978 | 427 |
| Embodiment 2 | 250 | 37 | 0.042 | 1350 | 447 |
| Embodiment 3 | 201 | 31 | 0.030 | 1010 | 458 |
| Embodiment 4 | 210 | 33 | 0.021 | 1210 | 438 |
Embodiment 5:
U=0.615, v=0.13, n=0, filling a prescription does
[0.615Bi(Mg
0.5Ti
0.5)O
3+0.13Bi(Zn
0.667Nb
0.333)O
3+0.255PbTiO
3]
Embodiment 6:
U=0.615, v=0.13, n=0.0025, filling a prescription does
0.9975[0.615Bi(Mg
0.5Ti
0.5)O
3+0.13Bi(Zn
0.667Nb
0.333)O
3+0.255PbTiO
3]+0.0025CuO
Embodiment 7:
U=0.605, v=0.085, n=0, filling a prescription is 0.605Bi (Mg
0.5Ti
0.5) O
3+ 0.085Bi (Zn
0.75W
0.25) O
3+ 0.31PbTiO
3
Embodiment 8:
U=0.605, v=0.085, the n=0.005 prescription does
0.995[0.605Bi(Mg
0.5Ti
0.5)O
3+0.085Bi(Zn
0.75W
0.25)O
3+0.29PbTiO
3]+0.005(0.4La
2O
3+0.6MnO
2)
Preparation technology as previously mentioned, calcined temperature is 850 ℃, 1050 ℃ of sintering temperatures; The performance such as the table 2 of the three component system high-temperature piezoelectric that makes pottery, u=0.615 among the embodiment 5 wherein, v=0.13; The stereoscan photograph of the piezoelectric ceramics of n=0 is as shown in Figure 2, can find out that ceramic structure is fine and close.
Can find out that from table 2 niobic zincic acid bismuth or tungsten zincic acid bismuth add in titanium magnesium acid bismuth-lead titanate two component system composition, form the ternary system solid solution body, have not only improved the Tc of material to a certain extent, and have improved the piezoelectricity and the electromechanical properties of material.Compare with table 1, can find out that titanium zincic acid bismuth is better relatively to the titanium magnesium acid optimization effect that bismuth-the lead titanate two component system is formed.
Table 2
| d 33(pC/N) | kp(％) | tanδ | ε 33 T/εo | T c(℃) | |
| Embodiment 5 | 235 | 35 | 0.045 | 1045 | 438 |
| Embodiment 6 | 210 | 32 | 0.031 | 1000 | 433 |
| Embodiment 7 | 229 | 33 | 0.050 | 996 | 440 |
| Embodiment 8 | 230 | 32 | 0.041 | 980 | 427 |
Claims (3)
1. titanium magnesium acid bismuth-bismuth zinc-base uhligite-lead titanate three component system high-temperature piezoelectric is ceramic, and it is characterized in that: its composition is expressed by following general formula (1):
(1-n)[uBi(Mg
0.5Ti
0.5)O
3+v?Bi(Zn
xD
y)O
3+(1-u-v)PbTiO
3]+nM..................(1)
N in the general formula (1), u, v, x, y are each element shared x in material component, and value is all less than 1,0≤n＜0.05,0＜u＜1,0＜v＜1, and 2x+ay=3, and wherein a is the valence number of element D;
Wherein, M is selected from one or more in the MOX of Cu, Fe, Mn, Nd, Sm, La, and when M was multiple MOX, the nM in the general formula (1) represented with general formula (2):
n(m
1M
1+m
2M
2+……+m
mM
m)..............................(2)
General formula (2) expression M is made up of m kind MOX, respectively by M
1, M
2..., M
mExpression; m
1Expression M
1Account for the x of M, by that analogy, m
1+ m
2+ ...+m
m=1;
D is selected from Ti
4+, Zr
4+, Nb
5+, Ta
5+, W
6+A kind of in the metals ion.
2. the preparation method of titanium magnesium as claimed in claim 2 acid bismuth-bismuth zinc-base uhligite-lead titanate three component system high-temperature piezoelectric pottery; Comprise mixing and ball milling, pre-burning, making blank, sintering, quilt silver and polarization; It is characterized in that: said mixing and ball milling is each raw materials mix with proportional quantity, is that the medium wet ball mill got wet feed in 6-12 hour with the deionized water; Said pre-burning is that said wet feed drying is placed in the alumina crucible in 800-950 ℃ of calcining 1-4 hour, and calcining is accomplished back repetition wet ball mill and calcining process once, obtains the precalcining powder; Said making blank is to be medium wet ball mill 6-12 hour with the deionized water with gained precalcining powder, and the 100-150 mesh sieve is crossed in dry back, and is blank at the forming under the pressure of 50-200MPa; Said sintering is that the gained blank is placed two crucibles of putting upside down, in air, adopts the powder entrapping method to get the porcelain base in 1000-1150 ℃ of sintering 1-4 hour under the normal pressure; Said is the porcelain base to be polished in silicone oil, to be polarized after the silver electrode handled 5-15 minute by silver, polarizing voltage 3-6kV/mm, and the polarization temperature is 25-150 ℃.
3. preparation method according to claim 2 is characterized in that: the temperature rise rate in the said sintering process is 3-6 ℃/min.
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| CN105624791A (en) * | 2014-10-28 | 2016-06-01 | 中国科学院上海硅酸盐研究所 | Preparation method of tetragonal phase bismuth magnesium titanate-lead titanate base piezoelectric monocrystals |
| CN105645955A (en) * | 2014-11-18 | 2016-06-08 | 中国科学院上海硅酸盐研究所 | A preparing method of tetragonal bismuth magnesium titanate-lead titanate based piezoelectric ceramic |
| US10056539B2 (en) | 2014-04-30 | 2018-08-21 | Oregon State University | Electrocaloric device |
| CN109956748A (en) * | 2019-03-29 | 2019-07-02 | 合肥工业大学 | A kind of lead zirconate titanate-manganese bismuthino perovskite-polynary low-temperature sintered of lead base composite perofskite and preparation method thereof |
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