CN1023347C - Measuring system for transient charges - Google Patents
Measuring system for transient charges Download PDFInfo
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- CN1023347C CN1023347C CN 91100410 CN91100410A CN1023347C CN 1023347 C CN1023347 C CN 1023347C CN 91100410 CN91100410 CN 91100410 CN 91100410 A CN91100410 A CN 91100410A CN 1023347 C CN1023347 C CN 1023347C
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Abstract
The present invention belongs to semiconductor measurement technology which is suitable for the measurement of the electrical characteristics of semiconductors and the measurement of the electrical characteristics of insulator/semiconductor interfaces. Because the present invention uses the new measurement technology of a pulse charge method, a novel electrical leakage compensating feedback circuit formed by sequentially connecting an amplifier, a sampling circuit, an integrator and a feedback element, and microcomputer control, the present invention becomes a practical measuring system integrating a time domain mode, transient charge measurement and electrical leakage compensation which respectively have obvious advantages. The present invention can replace various existing measuring methods and devices, can measure thin grid media and MOS or MIS samples with large electrical leakage, can obtain all information, and has the advantages of high measuring precision, etc.
Description
The invention belongs to semiconductor measurement technology, be applicable to the measurement of semiconductor electricity characteristic and insulator/interface electrology characteristic (below be referred to as semiconductor electricity characteristic).
In the electrology characteristic that semiconductor measurement technology can be measured, belong to having of insulator/interface characteristic: accurate insulant electric capacity; The relation that surface potential and canopy are pressed; Flat-band voltage; Fixing and movable charge density in the insulant; The distribution of interface state in surperficial forbidden band; The capture time constant or the capture cross-section of interface state.Belong to having of semiconductor material character: minority carrier lifetime; Doping concentration distributes; Deep level density and level of energy.The measurable sample structure of this technology comprises the MOS(Metal-Oxide-Semiconductor Metal-oxide-semicondutor) diode, MIS(Metal-Insulator-Semiconductor metal-insulator semiconductor) diode, PN junction diode, schottky diode, PIN diode, SOI(Semiconductor-on-Insulator insulant semiconductor-on-insulator) structure, semi insulating semiconductor material etc.Relatively authority's semiconductor electricity characteristic measurement method is the conductance for alternating current method at present, its principle is that the ac small signal that adds different frequency (ω) at MOS or MIS diode two ends comes the electricity in the measuring samples admittance to lead component G(ω), when insulant/interface exists when having the interface state of certain hour constant, electricity is derived existing corresponding spectrum peak, this is a kind of frequency domain measurement method of small signal driving, in order to guarantee measured is that electricity is led, and needs accurate phase locking in the measurement.The conductance for alternating current method is uniquely in the prior art can obtain the insulant/dynamic perfromance of interface attitude and the method for capture cross-section reliably (" metal-insulator-silicon conductance technology is measured Si-SiO
2The interface electrical properties " author Ni Gulian, Ku Zibeige, be stated from 1055 pages of (The SI-SiO in 1967 of " Bell System Technical Journal " 46 volumes
2Interface-Electrical properties as Determined by the Netal-Insulator-silicon conductance Technique " E.H.Nicollian and A.Goetzberger; Bell System Technical Journal Vol; 46; 1055.1967) but in real work, be not widely used; its main cause is the restriction of frequency domain measurement pattern; in this pattern, to measure the electricity that needs to obtain to reach under tens bias values to certain interface state dynamic perfromance and lead G(ω) curve, every curve needs tens electricity under the discrete frequencies to lead the G measurement again, and test volume is excessive.Phase place under the different frequency is very difficult again than standard, measurement result also lacks intuitive, these all make the measurement of the conductance for alternating current of entire spectrum extremely bother and difficulty, the method scope of application of conductance for alternating current is very narrow simultaneously, it can only obtain the dynamic perfromance of interface state, can not the surface measurements gesture, interface state total amount and various material behavior.Also need other measuring technique to cooperate even measure the interface state dynamic perfromance.Analyze from measured angle, the size of the conductance for alternating current G that interface state produced of same quantity is directly proportional with the interface state characteristic frequency, that is to say, interface state is " slowly " more, and detectable signal is weak more, and this also is a significant drawbacks of conductance for alternating current method.Another kind of important prior art is quasistatic capacitance-voltage method (Quasi-Static Capacitane Voltage), is called for short the QSCV method, this be use one of interface electricity characteristic measuring method the most widely.It is to measure the surface potential of insulant/interface and the standard method of interface state, its principle is slowly to scan near the condition of static when static (grid voltage should fix) its grid voltage of ordering keeping MOS or MIS sample, measure its displacement current, in order to the quasistatic capacitor C (V) of decision sample.(" steam grown silicon-silicon dioxide interface " author's Burger is reined in, and is stated from international electric electronic engineering teacher.Electron device divided 701 pages of periodical 13 volumes 1966, (C.N.Berglund " Surface States at Steam-Grown Silicon-Silicon Oxide Interface " IEEE ED-13,701 1966).The weak point of this method is: 1. electric leakage has strict restriction to sample, if electric leakage is greater than 10
-13～10
-14A just is difficult to obtain reliable result, because modern crafts require thin gate medium, satisfies this restriction and more and more is not easy; 2. measuring accuracy is low, and only about 1%, this makes its energy range surveyed have only 50%～60% of surperficial forbidden band; 3. whether be not easy judgement sample near static.Except that above-mentioned two kinds of methods, also have some kinds of measuring methods, but in all existing measuring techniques, do not have a kind of measurement comprehensively, fast and reliably that can solve semiconductor electricity character simultaneously.The analysis showed that and to accomplish comprehensive, quick, measurement reliably, need reform Design of Measurement System thought, realize time domain measurement under the large and small pulse, compensate such three targets with transient charges as measuring object and automatic electric leakage, this is that prior art can't realize.The main inventor of present patent application in 1984 has proposed a kind of " pulse charge method ", this is a kind of time-domain measurement technique, accompanying drawing 1 has provided concrete measurement mechanism, it is by bias voltage and signal source, current/voltage transducer, integrator, and compositions such as the electric leakage compensation feedback that constitutes of amplifier, sampling/holding circuit, feedback element, automatic/hand compensated regulator, clock circuit, waveform recording measurement mechanism.The square pulse that signal source produces acts on sample (MOS) and goes up generation displacement current I(t), I(t) behind current/voltage converter and integrator, obtain output voltage V
o(t).
Vo(t)= (Q(t))/(C
1) + VF
Q(t in the formula)=f
I＜t
Dt is quantity of electric charge of extremely going up of sample,
C
IBe instrument constant
V
FIt is the baseline suspension level of output waveform
The electric leakage compensation feedback of being made up of amplifier and sampling/holding circuit, feedback element is each cycle end (φ=1) sampling, adopt V
o(t) value, i.e. V
FValue converts feedback current I to
C, the total electric leakage of equivalence of establishing factors such as comprising sample electric leakage, measurement mechanism input electric leakage and imbalance is I
o, when feedback gain A satisfies
C
IR
F/（｜A｜T）≥1
The time, I
O+ I
C=1, V
O(t) waveform can be stablized.
R in the formula
FBe feedback resistance
T is the cycle
When feedback gain A does not satisfy C
IR
F/ (| A|T) 〉=1 o'clock, V
O(t) waveform can produce vibration, and A is when too small, V
O(t) waveform can be random fluctuation again.
Waveform is (" Si/SiO as shown in Figure 2
2The pulse Q(V that is aided with pulse and constant infrared light photograph in the interface state research) method " author Zheng Xinshe, Li Zhijian, be stated from the 457th page of " semiconductor journal " 1984 the 5th volume).The advantage of this pulse charge method is respectively to have the factor of remarkable advantage to combine the time domain pattern in the semiconductor electricity feature measurement, transient charges measurement and such three of electric leakage compensation for the first time, makes it have a series of superiority on principle.But the pulse charge method that was proposed in 1984 is still immature, can not become a kind of measuring technique that can practical application, this be because: 1. output waveform V
oBe " suspension ", its baseline level VF floats with the variation of sample electric leakage, and waveform acquisition at this moment all is inconvenient with processing;
2. the waveform stabilization condition is relatively harsher, when recurrence interval T changes, needs feedback gain A simultaneously;
3. the compensation ability of leaking electricity a little less than, need to eliminate most of electric leakage with manual compensation earlier, change automatic feedback again over to, complicated operation;
4. by above-mentioned reason, be difficult to make practical measurement mechanism, and be difficult to realize the computerize of measuring process.
The objective of the invention is in order to overcome the deficiency of prior art, adopt new principle and method to constitute a kind of system that the semiconductor electrical properties is measured comprehensively.
The present invention is made up of bias voltage and signal source, current/voltage transducer, integrator 1, the major technique feature is to be connected to a sample circuit and an integrator 2 successively between electric leakage amplifier of compensation feedback and the feedback element, the termination that goes out at integrator 1 has an analog-digital converter A/D, the termination of going in bias voltage and signal source has a D-A converter D/A, A/D, D/A link to each other with microcomputer interface respectively, D/A, A/D and sample circuit are by the microcomputer synchro control, as shown in Figure 3.
Describe the present invention below in conjunction with accompanying drawing 3, after the bias level of sample MOS and pulse height are produced respectively by system controlled by computer D-A converter D/A, be combined into the bias pulse signal by bias voltage and signal source, pulse signal acts on sample MOS and produces displacement current I
t, obtain output voltage V through current/voltage transducer and integrator 1
O(t)
V
0（t）＝Q（t）/C
I
In the formula: Q(t) be quantity of electric charge of extremely going up of sample
C
IIt is instrument constant
This formula V
O(t)=Q(t)/C
IFormula V with pulse charge method
O(t)=Q(t)/C
I+ V
FDifference be; Its baseline level is stabilized in null value and no longer suspends, waveform as shown in Figure 4, feedback signal is proportional to V in the pulse charge method
F, required feedback current is big more, suspension level V
FJust big more.And the maintenance function of sample-and-hold circuit recedes into the background in the present invention, and only uses sample circuit, adds an integrator 2 thereafter, and microcomputer produces a sampling pulse φ in each end of term in week, and sample circuit is gathered φ=" 1 " V constantly
O(t) value and zero deviation are carried out ratio and integral operation by integrator 2 with it.So that feedback current I to be provided
CAnalysis and experiment show that this is the feedback circuit of a first order pole, can keep the charge integration of balance without the manual compensation electric leakage automatically.Just because of these characteristics, a series of shortcomings of pulse charge method have been eliminated.Certainly the present invention also can adopt Voltage Feedback, and as shown in Figure 5, electric current, two kinds of feedback methods of voltage come down to equivalent, and its dissimilarity is that feedback phase is just the opposite, needs be noted in circuit design.Amplifier in the compensation feedback of leaking electricity in addition can not established.
Advantage of the present invention is:
One, can replace the comprehensive measurement target of multiple existing techniques in realizing
Commutable method has:
1. quasistatic capacitance voltage method.Compare with this technology, the invention has the advantages that and to measure direct capacitance voltage curve rather than quasistatic capacitance voltage curves;
2. low-and high-frequency capacitive method.Compare with this technology, the invention has the advantages that with waveform measurement several times just to cover whole frequency spectrums from the high frequency tremendously low frequency;
3. frequency conversion capacitive method, advantage of the present invention is with 2;
4. the conductance for alternating current method is compared with this technology, the invention has the advantages that physical significance is more clear, and does not have the difficulty of phase locking, measures with the data processing work amount to significantly reduce;
5. charge pump method.Compare with this technology, the invention has the advantages that and not only can measure the mean charge amount that pumps but also can measure the instantaneous value that pumps electric charge;
6. electric current DLTS method the invention has the advantages that response amplitude and time constant are irrelevant, and the response amplitude and the time constant of electric current DLTS method is inversely proportional to;
7. photocurrent DLTS method, advantage of the present invention is with 6.
Two, possesses the multiple outstanding advantage that prior art does not possess
1. can compensate the electric leakage of sample direct current automatically, therefore can measure thin dielectric film and bigger MOS or the MIS sample of electric leakage;
2. can under small signal driving, realize the instantaneous measurement on the time domain, thereby obtain the full detail of MOS or MIS sample;
3. the electric charge waveform has clear physical meaning, can differentiate procedural nature and cause easily, and determine that according to charge variation semiconductor parameter is more rational physically, therefore, the present invention can measure in the current frontier that extremely important meaning arranged at SOI, PIN, semi insulating material, heterojunction structure etc.;
4. measuring accuracy can reach per mille or higher, owing to semiconductor parameter measurement under a lot of situations depends on the subtle change of data (measuring as the band edge surface potential).These characteristics are of great significance, and the measurement range that it distributes the silicon/silicon dioxide interface attitude expands 0.9～1.0eV to from 0.5～0.6eV;
5. the parameter that is obtained can comprise the each side information of obtaining semiconductor electricity parameter mutually from being in harmony, and does not need multiple survey instrument of integrated use and method.
Three, application characteristic is good
1. the present invention simplifies measurement owing to realize computerize greatly, survey crew is required to reduce, and data processing precision is improved;
2. insensitive to distribution parameters such as cable, electric capacity, can be used for the measurement under the ultra-low temperature surroundings;
3. not only can be used for precision measurement but also can be used for process-monitor and qualitative analysis, for example monitor the quality control situation of processing line;
4. owing to can obtain full detail, and computerize, in data processing, can adopt Digital Signal Processing, further improve precision, eliminate error and noise effect;
5. by design different measuring software and data processing software, expanded application scope.
Description of drawings:
Accompanying drawing 1 pulse charge method measuring system block diagram
Accompanying drawing 2 pulse charge method oscillograms
Accompanying drawing 3 measuring system for transient charges (current feedback) block diagram
Accompanying drawing 4 transient charges measured waveform figure
Accompanying drawing 5 measuring system for transient charges (voltage and feedback) block diagram
Accompanying drawing 6 electric leakage compensation feedback embodiment 1(current feedback)
Accompanying drawing 7 electric leakage compensation feedback embodiment 2(Voltage Feedback)
Embodiment 1
Accompanying drawing 6 has provided electric leakage compensation current feedback circuit embodiments.
Accompanying drawing 7 has provided electric leakage bucking voltage feedback circuit embodiment.
Claims (3)
1, a kind of measuring system for transient charges, constitute by bias voltage and signal source, current/voltage transducer, integrator 1, it is characterized in that leaking electricity and be connected to a sample circuit and an integrator 2 successively between the amplifier of compensation feedback and the feedback element, the termination that goes out at integrator 1 has a mould one number converter A/D, the termination of going in bias voltage and signal source has a number one weighted-voltage D/A converter D/A, analog-digital converter A/D, D-A converter D/A link to each other with microcomputer interface circuit respectively, and D-A converter D/A, analog-digital converter A/D and sample circuit are by the microcomputer synchro control.
2,, it is characterized in that said feedback element can form current feedback circuit according to the said measuring system for transient charges of claim 1.
3,, it is characterized in that said feedback element also can form voltage feedback circuit according to the said measuring system for transient charges of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91100410 CN1023347C (en) | 1991-01-24 | 1991-01-24 | Measuring system for transient charges |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91100410 CN1023347C (en) | 1991-01-24 | 1991-01-24 | Measuring system for transient charges |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1063557A CN1063557A (en) | 1992-08-12 |
| CN1023347C true CN1023347C (en) | 1993-12-29 |
Family
ID=4904607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 91100410 Expired - Fee Related CN1023347C (en) | 1991-01-24 | 1991-01-24 | Measuring system for transient charges |
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| CN (1) | CN1023347C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101641777B (en) * | 2007-03-29 | 2012-05-23 | 富士通株式会社 | Semiconductor device and bias generating circuit |
| CN102353888A (en) * | 2011-09-30 | 2012-02-15 | 上海宏力半导体制造有限公司 | Method for obtaining charge density of effective thin layer |
| CN102313867A (en) * | 2011-09-30 | 2012-01-11 | 上海宏力半导体制造有限公司 | Method for acquiring charge density of effective thin layer |
| CN109358239A (en) * | 2018-10-17 | 2019-02-19 | 国网天津市电力公司电力科学研究院 | A kind of phase matched circuit for the test of ac cable space charge |
| CN111855704B (en) * | 2020-07-28 | 2024-01-12 | 哈尔滨工业大学 | Method for detecting ionization damage sensitive part of bipolar transistor |
| CN111766497B (en) * | 2020-07-28 | 2023-01-17 | 哈尔滨工业大学 | High-precision weak transient current testing system and method |
| CN113702724A (en) * | 2021-09-10 | 2021-11-26 | 常州同惠电子股份有限公司 | Circuit and method for eliminating leakage current of charge test circuit |
-
1991
- 1991-01-24 CN CN 91100410 patent/CN1023347C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1063557A (en) | 1992-08-12 |
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