CN102333409B - 大气压等离子装置及其制造方法 - Google Patents
大气压等离子装置及其制造方法 Download PDFInfo
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- CN102333409B CN102333409B CN201110164519XA CN201110164519A CN102333409B CN 102333409 B CN102333409 B CN 102333409B CN 201110164519X A CN201110164519X A CN 201110164519XA CN 201110164519 A CN201110164519 A CN 201110164519A CN 102333409 B CN102333409 B CN 102333409B
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- plasma
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- 238000000034 method Methods 0.000 claims description 11
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- 238000004140 cleaning Methods 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 230000008030 elimination Effects 0.000 abstract 6
- 238000003379 elimination reaction Methods 0.000 abstract 6
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 241000272161 Charadriiformes Species 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- 238000009826 distribution Methods 0.000 description 4
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- 210000003850 cellular structure Anatomy 0.000 description 3
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/40—Surface treatments
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (5)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110164519XA CN102333409B (zh) | 2011-06-17 | 2011-06-17 | 大气压等离子装置及其制造方法 |
US13/318,354 US8564199B2 (en) | 2011-06-17 | 2011-07-01 | Atmospheric plasma apparatus and manufacturing method thereof |
PCT/CN2011/076750 WO2012171235A1 (zh) | 2011-06-17 | 2011-07-01 | 大气压等离子装置及其制造方法 |
DE112011105377.0T DE112011105377B4 (de) | 2011-06-17 | 2011-07-01 | Plasmagerät des Atmosphärendrucks und dessen Herstellungsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110164519XA CN102333409B (zh) | 2011-06-17 | 2011-06-17 | 大气压等离子装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102333409A CN102333409A (zh) | 2012-01-25 |
CN102333409B true CN102333409B (zh) | 2013-01-02 |
Family
ID=45484967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110164519XA Expired - Fee Related CN102333409B (zh) | 2011-06-17 | 2011-06-17 | 大气压等离子装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN102333409B (zh) |
DE (1) | DE112011105377B4 (zh) |
WO (1) | WO2012171235A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107072023B (zh) * | 2017-01-23 | 2023-03-21 | 中科新天地(合肥)环保科技有限公司 | 一种高效率低温等离子发生器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3606959A1 (de) * | 1986-03-04 | 1987-09-10 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung |
US5911832A (en) * | 1996-10-10 | 1999-06-15 | Eaton Corporation | Plasma immersion implantation with pulsed anode |
US6036821A (en) * | 1998-01-29 | 2000-03-14 | International Business Machines Corporation | Enhanced collimated sputtering apparatus and its method of use |
DE10108717C1 (de) * | 2001-02-23 | 2002-07-11 | Bosch Gmbh Robert | Vorrichtung und Verfahren zur Entladung von dielektrischen Oberflächen |
TW554420B (en) * | 2001-08-06 | 2003-09-21 | Anelva Corp | Surface processing device |
US6664737B1 (en) * | 2002-06-21 | 2003-12-16 | Axcelis Technologies, Inc. | Dielectric barrier discharge apparatus and process for treating a substrate |
JP2004227990A (ja) * | 2003-01-24 | 2004-08-12 | Kunihide Tachibana | プラズマ処理方法およびプラズマ処理装置 |
WO2004110583A2 (en) * | 2003-06-07 | 2004-12-23 | Sheehan Edward W | Ion enrichment aperture arrays |
JP2005217300A (ja) * | 2004-01-30 | 2005-08-11 | Toshiba Corp | 半導体製造装置 |
JP2006120872A (ja) * | 2004-10-21 | 2006-05-11 | Matsushita Electric Ind Co Ltd | ガス拡散プレート |
US20060185720A1 (en) * | 2005-02-22 | 2006-08-24 | Pentam, Inc. | Method of recycling a nuclear-cored battery |
EP1907596A4 (en) * | 2005-07-26 | 2009-09-16 | Psm Inc | PLASMA TREATMENT DEVICE AND METHOD OF INJECTION TYPE |
CN201002015Y (zh) * | 2007-01-11 | 2008-01-09 | 武汉理工大学 | 锥齿形介质阻挡放电等离子体化学反应器 |
CN100595902C (zh) * | 2007-10-11 | 2010-03-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于半导体设备的直流电极 |
CN101472384B (zh) * | 2007-12-28 | 2012-02-08 | 财团法人工业技术研究院 | 大气压等离子反应器 |
CN102017057B (zh) * | 2008-05-02 | 2012-11-28 | 欧瑞康太阳能股份公司(特吕巴赫) | 用于基板的等离子体辅助处理的等离子体处理装置和方法 |
CN101835336A (zh) * | 2010-05-21 | 2010-09-15 | 江苏大学 | 一种双介质阻挡放电低温等离子体发生器 |
-
2011
- 2011-06-17 CN CN201110164519XA patent/CN102333409B/zh not_active Expired - Fee Related
- 2011-07-01 WO PCT/CN2011/076750 patent/WO2012171235A1/zh active Application Filing
- 2011-07-01 DE DE112011105377.0T patent/DE112011105377B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE112011105377T5 (de) | 2014-03-13 |
CN102333409A (zh) | 2012-01-25 |
DE112011105377B4 (de) | 2017-02-09 |
WO2012171235A1 (zh) | 2012-12-20 |
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Denomination of invention: Atmospheric plasma device and manufacturing method thereof Effective date of registration: 20190426 Granted publication date: 20130102 Pledgee: Bank of Beijing Limited by Share Ltd. Shenzhen branch Pledgor: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: 2019440020032 |
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Date of cancellation: 20201016 Granted publication date: 20130102 Pledgee: Bank of Beijing Limited by Share Ltd. Shenzhen branch Pledgor: Shenzhen China Star Optoelectronics Technology Co.,Ltd. Registration number: 2019440020032 |
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