CN102331616A - Fully-spherical projection objective - Google Patents
Fully-spherical projection objective Download PDFInfo
- Publication number
- CN102331616A CN102331616A CN201110187035A CN201110187035A CN102331616A CN 102331616 A CN102331616 A CN 102331616A CN 201110187035 A CN201110187035 A CN 201110187035A CN 201110187035 A CN201110187035 A CN 201110187035A CN 102331616 A CN102331616 A CN 102331616A
- Authority
- CN
- China
- Prior art keywords
- lens
- positive
- negative
- combination
- meniscus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a fully-spherical projection objective which is used for forming an image of an object plane into an image plane. The fully-spherical projection objective, along the direction of an optical axis, comprises a first lens group, a second lens group, a third lens group, a fourth lens group and a fifth lens group; and in a sequence of the incident direction of a light beam, the first lens group G1 has a positive focal power, the second lens group G2 has a negative focal power, the third lens group G3 has the positive focal power, the fourth lens group G4 has the negative focal power, and the fifth lens group G5 has the positive focal power. All lenses in the fully-spherical projection objective are spherical lenses, not aspherical lenses. By adoption of the fully-spherical projection objective, aberration can be better compensated, imaging quality is improved, system resolution is improved, and photoetching efficiency is improved.
Description
Technical field
The present invention relates to a kind of global face projection objective, relate in particular to a kind of high resolution light projection photoetching objective lens system.
Background technology
Optical projection lithography is to utilize the principle of optical projection imaging, with IC figure on the mask repeat with substep or the mode of step-scan exposure with the optical exposure process of high resolution figure transfer to the gluing silicon chip.The optical projection lithography technology grows up in contact with near formula photoetching technique basis.Adopt projection lithography, can prolong mask serviceable life,, also be convenient to mask manufacture if adopt the projection objective of reduction magnification.Optical projection lithography has experienced the evolution that repeats photoetching (stepper) and step-scan photoetching (scanner) step by step.
Photolithography resolution can improve through the numerical aperture that shortens wavelength, reduction process constant and raising light projection photoetching objective lens.Facts have proved, shorten exposure wavelength and be valid approach the most.The optical projection lithography technology has successively experienced 436nm (g line), 365nm (i line), 248nm (KrF PRK), 193nm several technological phases such as (ArF PRKs) since 1978 are born.Except shortening exposure wavelength, constantly reducing technological coefficient k1 also is the crucial factor that further improves resolving power.The approach that reduces the k1 value comprises several aspects such as improving lighting condition, raising resist performance, employing optical proximity correction and phase shifting mask.Through nearly 10 years effort, made technological coefficient factor k1 value in big production environment, be reduced to 0.4 from 0.7.The better combination of above-mentioned factor will make the k1 value be reduced to 0.3 and even littler, and this will become a strategic measure of an optical lithography development in period from now on.When k1=0.25, just near the physics limit of optical lithography.Increasing numerical aperture also is the important channel of improving photolithography resolution, and the numerical aperture of camera lens increases to 0.82 by initial 0.28,0.4,0.6 gradually, even 0.85, almost arrived the limit.Projection photoetching objective lens with 193 nanometer work wavelength is a core component of making the projection lithography device of superfine graph.Japanese Nikon (Nikon), Canon (Canon) and the Zeiss, Germany disclosed projection photoetching objective lens with 193 nanometer work wavelength of company such as (Zeiss), resolution is higher, but these objective lens arrangement are complicated, make difficulty, cost an arm and a leg.Numerical aperture reaches 0.75 system and has the high-order aspheric surface mostly, and conjugate distance is longer, and system bulk is bigger.
Summary of the invention
The technical matters that the present invention will solve provides a kind of global face projection objective device, to improve the light projection photoetching objective lens resolving power, reduces the lens difficulty of processing simultaneously.
Global face projection objective of the present invention; Comprise first lens combination, second lens combination, the 3rd lens combination, the 4th lens combination and the 5th lens combination along its optical axis direction, said lens all are in same optical axis, it is characterized in that: have positive light coke from light beam incident direction order first lens combination; Second lens combination has negative power; The 3rd lens combination has positive light coke, and the 4th lens combination has negative power, and the 5th lens combination has positive light coke.And all eyeglasses are exactly sphere in the described global face projection lens group.
Said first lens combination comprises first positive lens, second positive lens, first negative lens and first meniscus lens.
Said second lens combination comprises second negative lens, the 3rd negative lens and the 4th negative lens.
Said the 3rd lens combination comprises second meniscus lens, the 3rd meniscus lens, the 4th meniscus lens, the 3rd positive lens, the 4th positive lens, the 5th meniscus lens, the 6th meniscus lens and the 7th meniscus lens.
Said the 4th lens combination comprises the 5th negative lens and the 6th negative lens.
Said the 5th lens combination comprises the 8th meniscus lens, the 9th meniscus lens, the 5th positive lens, the 6th positive lens, the 7th negative lens, the 7th positive lens, the tenth meniscus lens, the 11 meniscus lens, the 12 meniscus lens, the 8th negative lens and the 8th positive lens.
Between said the 9th meniscus lens and the 5th positive lens aperture diaphragm is set.
Said lens are fused quartz glass, and its refractive index is 1.560326.
The global face projection objective that the present invention proposes is for being suitable for the deep ultraviolet illuminator; Its numerical aperture reaches 0.75 light projection photoetching objective lens, and compact, the big visual field of this objective lens arrangement, image quality are good, and each eyeglass all uses sphere; Do not comprise aspheric surface; Greatly reduce difficulty of processing, be convenient to make, and compact conformation.Its objective system both sides heart far away, the radius of each lens element, thickness spacing all change in optimization to some extent, better aberration for compensation and obtain good structural parameters, and final picture element distorts less than 1nm, and wave aberration is less than 1nm.Compared with prior art, global face projection objective of the present invention has the following advantages:
1, five mirror groups of the present invention focal power adopts positive and negative, positive and negative, positive layout, and the corrective system aberration improves image quality well;
2, all lens of the present invention are all used sphere, do not use aspheric surface, do not have the gummed part, and all lens use commaterials, and are therefore simple in structure, compact, simplified the object lens manufacture craft, reduced cost of manufacture, improved the object lens quality simultaneously.
3, objective system of the present invention, its numerical aperture is very big, can reach 0.75,0.8, and operation wavelength is at deep ultraviolet, and objective angular field is bigger, and its objective system resolving power is higher, and photoetching efficient is higher.
4, objective system of the present invention is two telecentric systems, and object space heart degree far away and picture Fang Yuanxin degree are high, even mask graph and silicon chip depart from and tilt, also can not change the multiplying power of projection lithography.
Description of drawings
Fig. 1 is the structural representation of global face projection objective of the present invention;
Fig. 2 is global face projection objective optical-modulation transfer function synoptic diagram in whole audience scope;
Fig. 3 is the global face projection objective curvature of field and distortion synoptic diagram.
Among the figure: 1-first positive lens, 2-second positive lens, 3-first negative lens; 4-first meniscus lens, 5-second negative lens, 6-the 3rd negative lens, 7-the 4th negative lens, 8-second meniscus lens, 9-the 3rd meniscus lens, 10-the 4th meniscus lens, 11-the 3rd positive lens, 12-the 4th positive lens, 13-the 5th meniscus lens, 14-the 6th meniscus lens, 15-the 7th meniscus lens, 16-the 5th negative lens, 17-the 6th negative lens, 18-the 8th meniscus lens, 19-the 9th meniscus lens, 20-the 5th positive lens, 21-the 6th positive lens, 22-the 7th negative lens, 23-the 7th positive lens, 24-the tenth meniscus lens, 25-the 11 meniscus lens, 26-the 12 meniscus lens, 27-the 8th negative lens, 28-the 8th positive lens, 29-image planes.
Embodiment
Do to describe in further detail below in conjunction with the accompanying drawing specific embodiments of the invention.
Fig. 1 is the present invention whole world face projection objective schematic layout pattern; 28 global face lens form the first lens combination G1, the second lens combination G2, the 3rd lens combination G3, the 4th lens combination G4 and the 5th lens combination G5; The whole pair waist structures that form are set from the light beam incident direction successively.
The first lens combination G1 comprises first positive lens 1, second positive lens 2, first negative lens 3 and first meniscus lens 4., the first lens combination G1 has positive light coke, and incident beam is assembled.Wherein, To second positive lens 2, second positive lens 2 continues convergence of rays first positive lens 1 with convergence of rays, and light is on first negative lens 3 and first meniscus lens 4; The focal power of first negative lens 3 and first meniscus lens 4 is negative, thereby has guaranteed the balance aberration.
The second lens combination G2 comprises second negative lens 5, the 3rd negative lens 6, the 4th negative lens 7; Second lens combination is positioned at first waist of the two waist structures of object lens, so focal power makes the divergence of beam of the first lens combination G1 for negative.Second all power of lens of lens combination G2 are negative, to strengthen the effect of divergence of beam.
The 3rd lens combination G3 comprises second meniscus lens 8, the 3rd meniscus lens 9, the 4th meniscus lens 10, the 3rd positive lens 11, the 4th positive lens 12, the 5th meniscus lens 13, the 6th meniscus lens 14 and the 7th meniscus lens 15; The first half of the 3rd lens combination bends towards object space, and first face of each lens is concave surface, reducing the incident angle of light, thereby reduces the senior aberration of system, to guarantee second waist of convergence of rays in the two waist structures of object lens.
The 4th lens combination G4 comprises the 5th negative lens 16, the 6th negative lens 17; The 4th lens combination G4 is positioned at second waist of the two waist structures of object lens, and focal power makes divergence of beam for negative.The 4th all power of lens of lens combination G4 are negative, to strengthen the effect of divergence of beam.
The 5th lens combination G5 comprises the 8th meniscus lens 18, the 9th meniscus lens 19, the 5th positive lens 20, the 6th positive lens 21, the 7th negative lens 22, the 7th positive lens 23, the tenth meniscus lens the 24, the 11 meniscus lens the 25, the 12 meniscus lens 26, the 8th negative lens 27 and the 8th positive lens 28, wherein between the 9th meniscus lens 19 and the 5th positive lens 20 aperture diaphragm is set.The beam convergence that the 5th lens combination will be dispersed is on image planes.
Said lens all is in same optical axis.The first lens combination G1 has positive light coke; The second lens combination G2 has negative power; The 3rd lens combination G3 has positive light coke; The 4th lens combination G4 has negative power; The 5th lens combination G5 has positive light coke.Image planes 29 are surfaces, silicon chip place.
28 lens that global face projection objective of the present invention has and all be in same optical axis utilize the fixing relative position between them of the mechanical component of lens housing.The present invention has used fused quartz as lens material, and (refractive index is 1.560326 during the system centre wavelength) is as lens material.
The course of work of global face projection objective of the present invention is: with object plane is that mask places first positive lens, 1 preceding 92 millimeters places; Each visual field central ray vertical incidence first positive lens 1; Light rays is through the first lens combination G1, the second lens combination G2, the 3rd lens combination G3, the 4th lens combination G4 and the 5th lens combination G5, and at last the mask imaging being contracted to 1/4th image planes that are imaged on behind the 8th positive lens 28 is on the silicon chip.Each visual field central ray vertical incidence image planes, this optical projection system are the two core structures far away in object space and picture side.
For satisfying the structural parameters requirement; And further improve picture element; System is continued to optimize, change at interval through optimizing each surperficial radius of back and thickness, the concrete optimized Measures of present embodiment is an Applied Optics Design software construction majorized function; And add aberration and structural limitations parameter, progressively be optimized for existing result.
Present embodiment is realized through following technical measures: lighting source is the ArF laser instrument, the numerical aperture NA=0.75 of light projection photoetching objective lens, and distortion is less than 1nm, and the root mean square wave aberration is less than 1nm, and the optical system reduction magnification is 4 times.
" sequence number " in the following table is to begin to arrange from light incident end, and the beam incident surface of first positive lens 1 is sequence number S1, and the light beam exit facet is sequence number S2, and other minute surface sequence number by that analogy; " radius " provides the pairing spherical radius in each corrugated respectively; " spacing " provides between adjacent two surfaces along the centre distance of optical axis, if two surfaces belong to same eyeglass, then spacing is represented the thickness of this eyeglass.The concrete parameter of lens combination is following:
| Sequence number | Radius | Spacing | Material |
| Object plane | ∞ | 92.00 | |
| S1 | 1416.71 | 66.14 | SiO 2 |
| S2 | -172.28 | 0.25 | |
| S3 | -545.63 | 20.44 | SiO 2 |
| S4 | -267.67 | 0.10 | |
| S5 | 351.05 | 12.00 | SiO 2 |
| S6 | 176.65 | 0.68 | |
| S7 | 122.97 | 15.45 | SiO 2 |
| S8 | 127.93 | 13.41 | |
| S9 | 380.66 | 14.65 | SiO 2 |
| S10 | 224.38 | 21.88 | |
| S11 | -179.57 | 24.67 | SiO 2 |
| S12 | 196.94 | 25.17 | |
| S13 | -201.60 | 23.30 | SiO 2 |
| S14 | -1350.00 | 38.12 | |
| S15 | -121.19 | 25.02 | SiO 2 |
| S16 | -144.47 | 0.10 | |
| S17 | -255.54 | 26.10 | SiO 2 |
| S18 | -205.64 | 0.10 | |
| S19 | -791.96 | 30.48 | SiO 2 |
| S20 | -333.73 | 0.10 | |
| S21 | 1017.63 | 53.82 | SiO 2 |
| S22 | -405.43 | 0.10 | |
| S23 | 1295.45 | 35.00 | SiO 2 |
| S24 | -670.00 | 1.00 | |
| S25 | 398.13 | 21.11 | SiO 2 |
| S26 | 559.10 | 1.26 | |
| S27 | 186.96 | 50.82 | SiO 2 |
| S28 | 273.30 | 0.13 | |
| S29 | 164.01 | 31.02 | SiO 2 |
| S30 | 133.24 | 42.14 | |
| S31 | -2719.78 | 12.00 | SiO 2 |
| S32 | 167.46 | 42.13 | |
| S33 | -209.26 | 12.00 | SiO 2 |
| S34 | 352.47 | 43.33 | |
| S35 | -144.94 | 52.89 | SiO 2 |
| S36 | -193.96 | 0.10 | |
| S37 | -926.38 | 31.92 | SiO 2 |
| S38 | -303.12 | 0.10 | |
| STO | Infinitely great | 1.96 | |
| S40 | 557.03 | 85.35 | SiO 2 |
| S41 | -727.66 | 2.82 | |
| S42 | 636.15 | 28.46 | SiO 2 |
| S43 | -6396.29 | 0.10 | |
| S44 | 516.82 | 12.00 | SiO 2 |
| S45 | 286.91 | 17.07 | |
| S46 | 645.16 | 28.30 | SiO 2 |
| S47 | -2179.38 | 0.10 | |
| S48 | 338.63 | 22.93 | SiO 2 |
| S49 | 603.97 | 0.10 | |
| S50 | 144.15 | 93.82 | SiO 2 |
| S51 | 299.67 | 5.41 | |
| S52 | 131.96 | 46.74 | SiO 2 |
| S53 | 259.50 | 6.70 | |
| S54 | -1978.56 | 19.90 | SiO 2 |
| S55 | 355.86 | 8.01 | |
| S56 | 179.74 | 29.20 | SiO 2 |
| S57 | Infinitely great | 10.00 | |
| Image planes | ∞ | 0.0000 |
More than the concrete parameter of each lens in practical operation, can adjust to satisfy different systematic parameter requirements.
The deep ultraviolet whole world face object lens that present embodiment is made adopt following three kinds of evaluation meanses to test and assess:
1, optical-modulation transfer function evaluation
Fig. 2 is projection objective optical-modulation transfer function synoptic diagram in whole audience scope, and optical-modulation transfer function (MTF) is the direct evaluation of confirming resolving power of lens and depth of focus.Horizontal ordinate shown in Figure 2 is a spatial frequency, unit be line right/millimeter, ordinate is a modulating function, system MTF reaches diffraction limit basically.Face lithographic objective optical-modulation transfer function (MTF) figure in whole audience scope in the described deep ultraviolet of the present embodiment as shown in Figure 2 whole world shows, during MTF ≈ 40%, systemic resolution reaches 3795 lines right/millimeter, cutoff frequency be 7820 lines right/millimeter.
2, the astigmatism and the curvature of field and distortion
Fig. 3 is the light projection photoetching objective lens curvature of field and distortion synoptic diagram, and the left side is a curvature of field synoptic diagram, and horizontal ordinate is a defocusing amount, and unit is a millimeter, and ordinate is an object height; The right side is the distortion synoptic diagram, horizontal ordinate distortion number percent, and ordinate is an object height.As can be seen from the figure, system's focal plane shift all less than 30nm, is represented always to depart from the difference of maximum deviation value and minimum deviation value, i.e. F on the sagitta of arc and meridian ellipse
Tot=F
Max-F
Min, its maximal value F
Tot=30nm.Distortion changes with the visual field, and the marginal distortion maximum is 7e-8, so full the visual field maximum distortion is 1nm.
3, the root mean square corrugated is poor
The lithographic objective that present embodiment designed is that the minimum value of the monochromatic root mean square wave aberration of reference is that 0.0039 λ (F0.50) is 0.75nm with the barycenter, and maximal value is that 0.0055 λ (F1) is 1.06nm.
The present invention selects global face lens through increasing eyeglass, optimizes the radius and the thickness parameter of each lens, and it is good to have obtained picture element, the new system that is easy to make.The high-order aspheric surface has been removed by new system, and compact conformation is two core structures far away and heart degree height far away, and picture element is good.
Those of ordinary skill in the art will be appreciated that; Above embodiment is used for explaining the present invention; And be not to be used as qualification of the present invention; As long as in connotation scope of the present invention, the above embodiment is changed, modification all will drop in the scope of claims of the present invention.
Claims (8)
1. global face projection objective; Comprise first lens combination (G1), second lens combination (G2), the 3rd lens combination (G3), the 4th lens combination (G4) and the 5th lens combination (G5) along its optical axis direction; Said lens all are in same optical axis, it is characterized in that: have positive light coke from light beam incident direction order first lens combination (G1), second lens combination (G2) has negative power; The 3rd lens combination (G3) has positive light coke; The 4th lens combination (G4) has negative power, and the 5th lens combination (G5) has positive light coke, and said lens are sphere.
2. a kind of global face projection objective according to claim 1 is characterized in that first lens combination (G1) comprises first positive lens (1), second positive lens (2), first negative lens (3) and first meniscus lens (4).
3. a kind of global face projection objective according to claim 1 is characterized in that second lens combination (G2) comprises second negative lens (5), the 3rd negative lens (6) and the 4th negative lens (7).
4. a kind of global face projection objective according to claim 1; It is characterized in that the 3rd lens combination (G3) comprises second meniscus lens (8), the 3rd meniscus lens (9), the 4th meniscus lens (10), the 3rd positive lens (11), the 4th positive lens (12), the 5th meniscus lens (13), the 6th meniscus lens (14) and the 7th meniscus lens (15).
5. a kind of global face projection objective according to claim 1 is characterized in that the 4th lens combination (G4) comprises the 5th negative lens (16) and the 6th negative lens (17).
6. a kind of global face projection objective according to claim 1; It is characterized in that the 5th lens combination (G5) comprises the 8th meniscus lens (18), the 9th meniscus lens (19), the 5th positive lens (20), the 6th positive lens (21), the 7th negative lens (22), the 7th positive lens (23), the tenth meniscus lens (24), the 11 meniscus lens (25), the 12 meniscus lens (26), the 8th negative lens (27) and the 8th positive lens (28).
7. a kind of global face projection objective according to claim 6 is characterized in that, between described the 9th meniscus lens (19) and the 5th positive lens (20) aperture diaphragm is set.
8. a kind of global face projection objective according to claim 1 is characterized in that said lens are fused quartz glass, and its refractive index is 1.560326.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101870357A CN102331616B (en) | 2011-07-06 | 2011-07-06 | Fully-spherical projection objective |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101870357A CN102331616B (en) | 2011-07-06 | 2011-07-06 | Fully-spherical projection objective |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102331616A true CN102331616A (en) | 2012-01-25 |
| CN102331616B CN102331616B (en) | 2012-11-07 |
Family
ID=45483449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101870357A Expired - Fee Related CN102331616B (en) | 2011-07-06 | 2011-07-06 | Fully-spherical projection objective |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102331616B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102566011A (en) * | 2012-02-08 | 2012-07-11 | 中国科学院光电技术研究所 | Projection optical system |
| CN103389564A (en) * | 2012-05-11 | 2013-11-13 | 上海微电子装备有限公司 | Projection object lens |
| CN103472586A (en) * | 2013-09-18 | 2013-12-25 | 中国科学院光电技术研究所 | Projection optical system |
| CN103499876A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院光电技术研究所 | Large numerical aperture pure refraction type projection optical system |
| TWI723714B (en) * | 2018-12-30 | 2021-04-01 | 大陸商上海微電子裝備（集團）股份有限公司 | Lithography projection objective |
| CN114563866A (en) * | 2022-03-14 | 2022-05-31 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Projection objective system |
| WO2023198096A1 (en) * | 2022-04-12 | 2023-10-19 | 上海微电子装备（集团）股份有限公司 | Photolithography projection objective lens and photolithography machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5978150A (en) * | 1995-06-01 | 1999-11-02 | Nikon Corporation | Zoom lens |
| JP2000305013A (en) * | 1999-04-16 | 2000-11-02 | Tochigi Nikon Corp | Zoom lens |
-
2011
- 2011-07-06 CN CN2011101870357A patent/CN102331616B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5978150A (en) * | 1995-06-01 | 1999-11-02 | Nikon Corporation | Zoom lens |
| JP2000305013A (en) * | 1999-04-16 | 2000-11-02 | Tochigi Nikon Corp | Zoom lens |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102566011A (en) * | 2012-02-08 | 2012-07-11 | 中国科学院光电技术研究所 | Projection optical system |
| CN102566011B (en) * | 2012-02-08 | 2013-09-18 | 中国科学院光电技术研究所 | Projection optical system |
| CN103389564A (en) * | 2012-05-11 | 2013-11-13 | 上海微电子装备有限公司 | Projection object lens |
| CN103389564B (en) * | 2012-05-11 | 2016-04-20 | 上海微电子装备有限公司 | A kind of projection objective |
| CN103472586A (en) * | 2013-09-18 | 2013-12-25 | 中国科学院光电技术研究所 | Projection optical system |
| CN103472586B (en) * | 2013-09-18 | 2015-06-24 | 中国科学院光电技术研究所 | Projection optical system |
| CN103499876B (en) * | 2013-10-10 | 2015-07-29 | 中国科学院光电技术研究所 | A kind of pure refractive projection optics system of large-numerical aperture |
| CN103499876A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院光电技术研究所 | Large numerical aperture pure refraction type projection optical system |
| TWI723714B (en) * | 2018-12-30 | 2021-04-01 | 大陸商上海微電子裝備（集團）股份有限公司 | Lithography projection objective |
| US11899181B2 (en) | 2018-12-30 | 2024-02-13 | Shanghai Micro Electronics Equipment (Group) Co., Ltd. | Lithography projection objective |
| CN114563866A (en) * | 2022-03-14 | 2022-05-31 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Projection objective system |
| CN114563866B (en) * | 2022-03-14 | 2024-02-20 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Projection objective system |
| WO2023198096A1 (en) * | 2022-04-12 | 2023-10-19 | 上海微电子装备（集团）股份有限公司 | Photolithography projection objective lens and photolithography machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102331616B (en) | 2012-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102331616B (en) | Fully-spherical projection objective | |
| CN102207609B (en) | Catadioptric projection objective | |
| CN103499877B (en) | A kind of projection optical system of large-numerical aperture | |
| US7317571B2 (en) | Catadioptric projection optical system, exposure apparatus having the same, device fabrication method | |
| US8970964B2 (en) | Projection objective lens system | |
| US6198576B1 (en) | Projection optical system and exposure apparatus | |
| KR20040089688A (en) | Refractive projection lens | |
| JPH08304705A (en) | Reflection refractive optical system | |
| KR20130024957A (en) | Projection optical system, and exposure apparatus and exposure method | |
| US6903804B2 (en) | Projection optical system and projection and light exposure apparatus using it | |
| KR102266723B1 (en) | Projection optical system, exposure apparatus, and article manufacturing method | |
| JPH07140384A (en) | Projection optical system and projection aligner | |
| JP5105743B2 (en) | Refractive projection objective for immersion lithography | |
| CN103499876B (en) | A kind of pure refractive projection optics system of large-numerical aperture | |
| CN103353669B (en) | High-numerical aperture immersion projection objective lens | |
| JP2008527403A (en) | Projection optical system | |
| JP2006267383A (en) | Projection optical system, exposure device and exposure method | |
| US9436103B2 (en) | Wynne-Dyson projection lens with reduced susceptibility to UV damage | |
| CN102662307B (en) | High-resolution projection optical system | |
| CN104035187B (en) | Pure reflecting dry type projection optical system with large numerical aperture | |
| CN102200624B (en) | Photo-etching projection lens | |
| CN102645730A (en) | Experimental immersed projective lithography objective lens | |
| CN101950065B (en) | Fully-spherical deep ultraviolet lithography objective | |
| US20020167650A1 (en) | Projection optical system and exposure apparatus with the same | |
| CN103713379B (en) | A kind of catadioptric dry type projection optical system of large-numerical aperture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121107 Termination date: 20210706 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |