CN102566011A - Projection optical system - Google Patents
Projection optical system Download PDFInfo
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- CN102566011A CN102566011A CN2012100277570A CN201210027757A CN102566011A CN 102566011 A CN102566011 A CN 102566011A CN 2012100277570 A CN2012100277570 A CN 2012100277570A CN 201210027757 A CN201210027757 A CN 201210027757A CN 102566011 A CN102566011 A CN 102566011A
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Abstract
The invention discloses a projection optical system which is used for imaging images in an object plane into an image plane. The projection optical system sequentially comprises a first lens unit (L1), a second lens unit (L2), a third lens unit (L3), a fourth lens unit (L4) and a fifth lens unit (L5) which are arranged in the direction of the optical axis of the system; the lens units are positioned in the same optical axis; the first lens unit (L1) has negative refractive power; the second lens unit (L2) has positive refractive power; the third lens unit (L3) has negative refractive power; the fourth lens unit (L4) has positive refractive power; the fifth lens unit (L5) has positive refractive power; and all lenses adopt spherical surfaces. The projection optical system can better compensate aberration, improve the imaging quality, enhance the system resolution and improve the photolithography efficiency.
Description
Technical field
The present invention relates to a kind of deep ultraviolet whole world face projection optical system that is used for lithography process, semiconductor element producing device, belong to high resolving power projection optical system technical field.
Background technology
Photoetching is a kind of ic manufacturing technology, and it is to utilize the optical projection based on image principle that the IC figure on the mask plate is transferred to high graphics on the gluing silicon chip with Exposure mode, and the manufacturing of nearly all integrated circuit all is to adopt the optical projection lithography technology.At first, the semiconductor devices manufacturing, employing be the contact photolithography technology that mask and silicon chip stick together.Nineteen fifty-seven, the contact photolithography technology has realized that characteristic dimension (Feature Size) is the manufacturing of 20 microns dynamic RAM (DRAM, Dynamic Random Access Memory).Afterwards, semicon industry introduce have between mask and silicon chip certain interval near the formula photoetching technique, and respectively at producing the DRAM that characteristic dimension is 10 microns and 6 microns in 1971 and 1974.1978, U.S. GCA company researched and developed first distribution repetition projection mask aligner in the world, and resolution can reach 2 microns, and distribution repetition projection mask aligner becomes the main flow in the semiconductor fabrication rapidly.The alignment precision of distribution repetition projection mask aligner can reach ± and 0.5 micron, compare the alignment precision when steppers has greatly improved resolution and the mask of system/silicon chip alignment with litho machine before this.
Photoetching technique is one of important support type technology of China's chip industry development; The projection lithography device is the key equipment of large scale integrated circuit manufacturing process; High resolving power high precision projection optical system is the core component of high most advanced and sophisticated litho machine, and its performance is directly determining the precision of litho machine.The projection optical system practical research of present domestic wavelength 193 nanometers of just having started working, the design value aperture was also all not really high in the past, and best result distinguishes that power is the 0.35-0.5 micron.Because resolution is low, can not produce the figure of high-accuracy high-resolution, can not satisfy the demand of large scale integrated circuit manufacturing and research.
The formula that can be obtained the litho machine resolving power by Rayleigh diffraction theorem is following:
R＝k
1λ/NA
R is the resolving power of litho machine in the following formula, k
1Be the technological coefficient factor, λ is an operation wavelength, and NA is the numerical aperture of light projection photoetching objective lens.Therefore; In order to satisfy higher resolution; Need the wavelength decreases of light source and the numerical aperture that increases projection optical system be realized, but during the wavelength decreases of light source because optical glass to the absorption of light and the material category that is used for projection optical system can be very limited.
It is 0.85 that the safe great submission in the big village of Japanese Nikon company has provided several numerical apertures at the patent CN03121915 of Patent Office of the People's Republic of China; The projection optical system that is used for photoetching resolution 70 nanometers; Not only contain a lot of high-order aspheric surfaces in its structure, and in system, also be useful on the catoptron of the light path of turning back, such system's processing cost can be very big; And detect relatively more difficult; Though can shorten the length of projection optical system with the catoptron light path of turning back, need the very high precision of debuging be proposed to system simultaneously, the present invention proposes the global face projection exposure optical system that a kind of easy processing that realizes ultrahigh resolution is debug; Can be used on the photoetching resolution that reaches 70nm in the litho machine, this photoetching technique for China has significance.
Summary of the invention
The present invention is for solving the existing low deficiency of projection optical system resolution; And processing cost is big, and accuracy of detection is high, the problem that resetting difficulty is big; A kind of deep UV projection optical system has been proposed; This projection optical system compact conformation, big visual field, image quality are good, and all eyeglasses are spherical mirror all, have reduced processing and resetting difficulty.
A kind of projection optical system; Comprise the first lens unit L1, the second lens unit L2, the 3rd lens unit L3, the 4th lens unit L4 and the 5th lens unit L5 successively along its optical axis direction, said lens unit all is in same optical axis, it is characterized in that; The first lens unit L1 has negative refracting power; The second lens unit L2 has positive refracting power, and the 3rd lens unit L3 has negative refracting power, and the 4th lens unit L4 has positive refracting power; The 5th lens unit L5 has positive refracting power, and said lens are sphere.
Described a kind of projection optical system is characterized in that, the first lens unit L1 comprises first positive lens 1, second positive lens 2, first negative lens 3, second negative lens 4, first meniscus lens 5 and second meniscus lens 6.
Described a kind of projection optical system is characterized in that, the second lens unit L2 comprises the 3rd positive lens 7, the 3rd meniscus lens 8, the 4th meniscus lens 9 and the 3rd negative lens 10.
Described a kind of projection optical system is characterized in that, the 3rd lens unit L3 comprises the 4th negative lens 11, the 5th negative lens 12, the 5th meniscus lens 13, the 4th positive lens 14 and the 5th positive lens 15.
Described a kind of projection optical system is characterized in that, the 4th lens unit L4 comprises the 6th meniscus lens 16, the 6th positive lens 17, the 7th positive lens 18 and the 8th positive lens 19.
Described a kind of projection optical system is characterized in that, the 5th lens unit L5 comprises the 9th positive lens 20, the 6th negative lens 21, the tenth positive lens 22 and the 11 positive lens 23.
Described a kind of projection optical system; It is characterized in that; Lens in the first lens unit L1, the second lens unit L2, the 3rd lens unit L3, the 4th lens unit L4 and the 5th lens unit L5 all are the monolithic mirrors, with the relative position between fixing each lens of the mechanical component on the lens housing.
Described a kind of projection optical system is characterized in that: the lighting source of described projection optical system is that operation wavelength is the F2 excimer laser of 157nm.
The present invention has the following advantages:
1, the numerical aperture NA of projection optical system of the present invention is 0.85, and operation wavelength is 157 nanometers, and is bigger as square visual field; Be 26mm * 10.5mm; Because numerical aperture of objective is big, has overcome the low deficiency of existing projection optical system resolution, has improved photoetching resolution.
2, projection optical system integral body of the present invention is made up of 23 lens, all is spherical mirror, and eyeglass all is one-piece construction, and adopts the gummed optical element, and is simple and compact for structure.
3. projection optical system of the present invention all adopts spherical mirror, has simplified the manufacture craft of projection optical system greatly, has reduced cost of manufacture, has improved the object lens quality simultaneously, owing to do not use aspheric surface, has also reduced the work and the difficulty of context of detection in addition.
4. 23 lens in the projection optical system of the present invention are made up of five lens units, do not use catoptron that light path is turned back, and all mirrors all is coaxial, greatly reduces resetting difficulty and precision.
5, projection optical system of the present invention has adopted two telecentric systems, can guarantee the reduction magnification of projection exposure optical system, and heart degree far away is high, as Fang Yuanxin reach 2.98mrad, the object space heart far away is 1.4mrad.
Description of drawings
Fig. 1 is the structural representation of a kind of projection optical system of the present invention;
Fig. 2 is projection optical system of the present invention optical-modulation transfer function (MTF) synoptic diagram in full field range;
Fig. 3 is projection optical system spherical aberration of the present invention, the curvature of field and distortion synoptic diagram.
Label declaration: 1-first positive lens; 2-second positive lens; 3-first negative lens; 4-second negative lens; 5-first meniscus lens; 6-second meniscus lens; 7-the 3rd positive lens; 8 the 3rd meniscus lens; 9-the 4th meniscus lens; 10-the 3rd negative lens; 11-the 4th negative lens; 12-the 5th negative lens; 13-the 5th meniscus lens; 14-the 4th positive lens; 15-the 5th positive lens; 16-the 6th meniscus lens; 17-the 6th positive lens; 18-the 7th positive lens; 19-the 8th positive lens; 20-the 9th positive lens; 21-the 6th negative lens; 22-the tenth positive lens; 23-the 11 positive lens; The 24-image planes.
Embodiment
For objects and advantages of the present invention are described better, the present invention is described further below in conjunction with accompanying drawing and specific embodiment.
Fig. 1 is the present invention whole world face projection objective schematic layout pattern, and 23 global face lens form the first lens unit L1, the second lens unit L2, the 3rd lens unit L3, the 4th lens unit L4 and the 5th lens unit L5, are provided with from the light beam incident direction successively.
The first lens unit L1 is the lens combination with negative refracting power, comprises first positive lens 1, second positive lens 2, first negative lens 3, second negative lens 4, first meniscus lens 5 and second meniscus lens 6.Ray cast to first positive lens 1 after first positive lens 1 assemble; Assemble the back through second positive lens 2 again and arrive first negative lens 3;, first negative lens 3 incides second negative lens 4 after dispersing; Disperse entering first meniscus lens 5 through second negative lens 4, bigger through the dispersion angle of dispersing arrival second meniscus lens 6, the second meniscus lens 6 once more of first meniscus lens 5.
The second lens unit L2 is the lens combination with positive refracting power, comprises the 3rd positive lens 7, the 3rd meniscus lens 8, the 4th meniscus lens 9 and the 3rd negative lens 10.After dispersing from second meniscus lens 6 of the first lens unit L1, light assembles entering the 3rd meniscus lens 8 through the 3rd positive lens 7; After the convergence once more of the 3rd meniscus lens 8, the 4th meniscus lens 9, enter into the 3rd negative lens 10, by leaving the second lens unit L2 behind 10 pairs of divergence of beam of the 3rd negative lens.
The 3rd lens unit L3 is the lens combination with negative refracting power, comprises the 4th negative lens 11, the 5th negative lens 12, the 5th meniscus lens 13, the 4th positive lens 14 and the 5th positive lens 15.Light enters into the 4th positive lens 14 by the 4th negative lens 11, the 5th negative lens 12,13 3 mirrors of the 5th meniscus lens after dispersing continuously; After the 4th positive lens 14 is assembled, project on the 5th positive lens 15,15 pairs of light of the 5th positive lens are assembled the diaphragm that the back arrives optical system.
The 4th lens unit L4 is the lens combination with positive refracting power, comprises the 6th meniscus lens 16, the 6th positive lens 17, the 7th positive lens 18 and the 8th positive lens 19.The light beam that is come out by diaphragm is dispersed the back through the 6th meniscus lens 16 and is got into the 6th positive lens 17, and the bore of assembling the back systems through the 6th positive lens 17, the 7th positive lens 18 and the 8th positive lens 19 three times obviously reduces.
The 5th lens unit L5 is the lens combination with positive refracting power, comprises the 9th positive lens 20, the 6th negative lens 21, the tenth positive lens 22 and the 11 positive lens 23.The beam convergence that the 5th lens combination will be dispersed is surface, silicon chip place on image planes 24.Light beam gets into the 6th negative lens 21 after the 9th positive lens 20 is assembled, reach on the silicon chip at last through twice convergence through the tenth positive lens 22 and the 11 positive lens 23 after the 6th negative lens 21 small the dispersing.
Lens in above-mentioned five lens units all are in same optical axis, the mechanical component on 23 lens scioptics housings in five lens units fixing between them relative position and link together.What all mirrors used among the present invention all is calcium fluoride material, and the refractive index of calcium fluoride glass is 1.5593 when centre wavelength 157.6244 nanometers.
For satisfying the structural parameters requirement; And further improve picture element; System is continued to optimize, change at interval through optimizing each surperficial radius of back and thickness, the concrete optimized Measures of present embodiment is an Applied Optics Design software construction majorized function; And add aberration and structural limitations parameter, progressively be optimized for existing result.
Present embodiment is realized through following technical measures: lighting source operation wavelength 157.6244 nanometers; Visual field, picture side 26mm * 10.5mm; The numerical aperture of projection exposure optical system (NA) is 0.85, photolithography resolution (R)=70 nanometer, and the optical system reduction magnification is 4 times; Projection exposure optical system first mirror is apart from mask 56.43mm, and last a slice mirror is 9.3mm to the distance of silicon chip.
Deep ultraviolet of the present invention whole world face projection optical system be first positive lens, 1 preceding 56.43 millimeters places that mask places objective system with object plane; Each visual field central ray vertical incidence first positive lens 1; This projection optical system is the object space heart far away at object space, and light is dispersed the back through the first lens unit L1 and got into the second lens unit L2, the second lens unit L2 with light focusing after; This moment, the clear aperture of optical system reached minimum; The 3rd lens unit L3 converges at the diaphragm place after with divergence of beam, and twice refraction through the 4th lens unit L4 and the 5th lens unit L5 focuses on then, and dwindling four times of image planes 24 that are imaged on behind the 11 positive lens 23 is on the silicon chip.The chief ray vertical incidence image planes of five visual fields of projection optical system, system is a telecentric beam path in image space.
All mirrors all adopts spherical mirror among the present invention, does not comprise aspheric surface, is convenient to make, and the distance of deep ultraviolet whole world face projection optical system from the mask face to the silicon chip face is 1336mm, compact conformation.The object space of this system heart degree far away is 2.98mrad; As the Fang Yuanxin degree is 1.4mrad; The heart degree far away of object space picture side is all very high; Radius-of-curvature, thickness through optimizing each lens and change the various aberrations that interval between each lens reduces optical system, the final distortion of system is that wave aberration is less than 3nm less than 1nm.
Below table 1 listed the concrete parameter on each surface of projection exposure optical system, " sequence number " in the table is to begin to arrange from light incident end, the beam incident surface of first positive lens 1 is a sequence number 1, the light beam exit facet is a sequence number 2, other minute surface sequence number is by that analogy; " radius-of-curvature " provides the pairing spherical radius in each corrugated respectively; " spacing " provides between adjacent two surfaces along the centre distance of optical axis, if two surfaces belong to same eyeglass, then spacing is represented the thickness of this eyeglass, and the 31st face is the aperture diaphragm of system, and aperture diaphragm is being controlled the size that gets into the optical system light beam.The concrete parameter of lens combination is following:
The concrete parameter of table 1 projection exposure optical system
In practical operation, more than the concrete parameter (like radius-of-curvature, lens thickness, lens are at interval) of each lens can do certain adjustment and satisfy different systematic parameter requirements.
The deep ultraviolet whole world face projection optical system that present embodiment is made adopts following three kinds of evaluation meanses to test and assess:
1, modulation transfer function (MTF) evaluation
The working resolution of projection exposure optical system is every millimeter demand pairs that on silicon chip, can access the clear distinct lines of high-contrast.Modulation transfer function (MTF) is the direct evaluation of confirming projection exposure optical system resolution.The MTF that can know this system from Fig. 2 has reached diffraction limit, explains that this projection exposure optical system has the resolution near diffraction limit on whole image planes.The described deep ultraviolet of present embodiment shown in Figure 2 whole world face projection optical system shows that at whole audience scope internal modulation transport function (MTF) figure the cutoff frequency of optical system is 10560 lp/mm, has high resolution.
2, root mean square wave aberration
Wave aberration is the optical assessment index that all will use of the very high optical system of image quality, and it can intuitively react the situation of low order aberration and higher order aberratons.It is the root mean square wave aberration of each visual field of reference with the barycenter that the projection optical system that present embodiment designed, table 2 have been listed each visual field, and wherein ω representes full visual field, and λ representes wavelength.
The root mean square wave aberration of each visual field of table 2
| The visual field | The root mean square wave aberration |
| 0 | 0.0008λ |
| 0.3ω | 0.0017λ |
| 0.5ω | 0.0022λ |
| 0.9ω | 0.0048λ |
| ω | 0.0061λ |
3, spherical aberration, astigmatism, the curvature of field and distortion
Distortion can make a picture point squint from ideal position, and in order to guarantee alignment precision, distortion causes the displacement of picture point should be no more than the width of the extra fine wire bar that will scribe.Fig. 3 has provided the various aberration curve figure of the described projection optical system of present embodiment.As can be seen from the figure, the distortion maximum of optical system is 8.2e-8, and full visual field maximum distortion is less than 1nm.
The present invention optimizes radius-of-curvature, thickness parameter and the lens interval of each lens through selecting global face lens, has obtained the novel projection optical system that high resolving power, good, the easy processing detection of picture element are debug.New system does not use aspheric surface, in system, does not introduce the catoptron light path of turning back yet, and reduces and makes, processes and debug the difficulty in the process; The total system compact conformation is simple; Be two core structures far away of image and heart degree height far away, it is good to form images, and can satisfy the requirement of 70nm photoetching.
Above-described specific descriptions have been carried out further explain to purpose, technical scheme and the beneficial effect of inventing, and institute is understood that; The above is merely specific embodiment of the present invention; Be used to explain the present invention, and be not used in qualification protection scope of the present invention, all within spirit of the present invention and principle; Any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. projection optical system; Comprise first lens unit (L1), second lens unit (L2), the 3rd lens unit (L3), the 4th lens unit (L4) and the 5th lens unit (L5) successively along its optical axis direction, said lens unit all is in same optical axis, it is characterized in that; First lens unit (L1) has negative refracting power; Second lens unit (L2) has positive refracting power, and the 3rd lens unit (L3) has negative refracting power, and the 4th lens unit (L4) has positive refracting power; The 5th lens unit (L5) has positive refracting power, and said lens are sphere.
2. a kind of projection optical system according to claim 1; It is characterized in that first lens unit (L1) comprises first positive lens (1), second positive lens (2), first negative lens (3), second negative lens (4), first meniscus lens (5) and second meniscus lens (6).
3. a kind of projection optical system according to claim 1 is characterized in that, second lens unit (L2) comprises the 3rd positive lens (7), the 3rd meniscus lens (8), the 4th meniscus lens (9) and the 3rd negative lens (10).
4. a kind of projection optical system according to claim 1 is characterized in that, the 3rd lens unit (L3) comprises the 4th negative lens (11), the 5th negative lens (12), the 5th meniscus lens (13), the 4th positive lens (14) and the 5th positive lens (15).
5. a kind of projection optical system according to claim 1 is characterized in that, the 4th lens unit (L4) comprises the 6th meniscus lens (16), the 6th positive lens (17), the 7th positive lens (18) and the 8th positive lens (19).
6. a kind of projection optical system according to claim 1 is characterized in that, the 5th lens unit (L5) comprises the 9th positive lens (20), the 6th negative lens (21), the tenth positive lens (22) and the 11 positive lens (23).
7. a kind of projection optical system according to claim 1; It is characterized in that; Lens in first lens unit (L1), second lens unit (L2), the 3rd lens unit (L3), the 4th lens unit (L4) and the 5th lens unit (L5) all are the monolithic mirrors, with the relative position between fixing each lens of the mechanical component on the lens housing.
8. projection optical system according to claim 1 is characterized in that: the lighting source of described projection optical system is that operation wavelength is the F2 excimer laser of 157nm.
9. projection optical system according to claim 1 is characterized in that: projection optical system projects on the silicon chip surface after the figure on the mask is dwindled 0.25 times.
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| CN201210027757.0A CN102566011B (en) | 2012-02-08 | 2012-02-08 | Projection optical system |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102662307A (en) * | 2012-05-02 | 2012-09-12 | 中国科学院光电技术研究所 | High-resolution projection optical system |
| CN103472586A (en) * | 2013-09-18 | 2013-12-25 | 中国科学院光电技术研究所 | Projection optical system |
| CN103499876A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院光电技术研究所 | Large numerical aperture pure refraction type projection optical system |
| CN104111518A (en) * | 2014-08-04 | 2014-10-22 | 中国科学院光电技术研究所 | Large-numerical-aperture projective objective lens optical system |
| WO2016155426A1 (en) * | 2015-04-03 | 2016-10-06 | 中国科学院上海光学精密机械研究所 | Optical system for measurement of illumination pupil polarization state of mask aligner |
| CN111352211A (en) * | 2018-12-23 | 2020-06-30 | 辽宁中蓝电子科技有限公司 | Small-head high-resolution lens |
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| US5978150A (en) * | 1995-06-01 | 1999-11-02 | Nikon Corporation | Zoom lens |
| CN1550818A (en) * | 2003-02-10 | 2004-12-01 | ������������ʽ���� | Projection zoom lens and optical projector with same |
| CN102331616A (en) * | 2011-07-06 | 2012-01-25 | 中国科学院光电技术研究所 | Fully-spherical projection objective |
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2012
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5978150A (en) * | 1995-06-01 | 1999-11-02 | Nikon Corporation | Zoom lens |
| CN1550818A (en) * | 2003-02-10 | 2004-12-01 | ������������ʽ���� | Projection zoom lens and optical projector with same |
| CN102331616A (en) * | 2011-07-06 | 2012-01-25 | 中国科学院光电技术研究所 | Fully-spherical projection objective |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102662307A (en) * | 2012-05-02 | 2012-09-12 | 中国科学院光电技术研究所 | High-resolution projection optical system |
| CN102662307B (en) * | 2012-05-02 | 2014-03-12 | 中国科学院光电技术研究所 | High-resolution projection optical system |
| CN103472586A (en) * | 2013-09-18 | 2013-12-25 | 中国科学院光电技术研究所 | Projection optical system |
| CN103472586B (en) * | 2013-09-18 | 2015-06-24 | 中国科学院光电技术研究所 | Projection optical system |
| CN103499876A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院光电技术研究所 | Large numerical aperture pure refraction type projection optical system |
| CN103499876B (en) * | 2013-10-10 | 2015-07-29 | 中国科学院光电技术研究所 | A kind of pure refractive projection optics system of large-numerical aperture |
| CN104111518A (en) * | 2014-08-04 | 2014-10-22 | 中国科学院光电技术研究所 | Large-numerical-aperture projective objective lens optical system |
| CN104111518B (en) * | 2014-08-04 | 2016-09-28 | 中国科学院光电技术研究所 | A kind of projection objective lens optical system of large-numerical aperture |
| WO2016155426A1 (en) * | 2015-04-03 | 2016-10-06 | 中国科学院上海光学精密机械研究所 | Optical system for measurement of illumination pupil polarization state of mask aligner |
| CN111352211A (en) * | 2018-12-23 | 2020-06-30 | 辽宁中蓝电子科技有限公司 | Small-head high-resolution lens |
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