CN102329085A - 用于修改产品的系统和方法以及修改的产品 - Google Patents
用于修改产品的系统和方法以及修改的产品 Download PDFInfo
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- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
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Abstract
本发明名称为用于修改产品的系统和方法以及修改的产品。公开了用于修改产品(401)以提高抗裂纹传播性的系统(400)和方法。该方法包括提供系统(400),定位一个或多个激光器(402),以及将预定能量(404)定向到产品(401)的表面(410)上的地形特征(406)。
Description
技术领域
本公开针对用于加强衬底的系统和方法以及包括加强的衬底的产品。更具体地说,本公开涉及用于生产具有提高的抗裂纹传播性的产品的系统和方法。
背景技术
一般来说,产品(例如,玻璃衬底)可能由于来自边缘或角缺陷的裂纹的传播而出故障。因此,产品上的边缘缺陷或角缺陷可能是不期望的。去除边缘缺陷或角缺陷能够通过提高抗裂纹传播性并因而提高抗故障性,来改善产品的强度。
类似地,包括碎屑的产品(例如,玻璃衬底)可能由于影响表面性质而是不期望的。例如,碎屑可例如通过影响产品的光学性质而影响机械性质。额外地或备选地,碎屑可例如通过引起短接而影响电性质。因此,产品上的碎屑可能是不期望的。
光伏电池之内的玻璃衬底上的碎屑或缺陷可能是特别不期望的。碎屑或缺陷能够改变光学器件,影响涂层的粘合,和/或以其它方式降低光伏电池的效能。
所需的是用于生产具有通过能源修改的表面的产品的系统和方法,其中修改的表面基本没有碎屑,并且局部融化以提高抗裂纹传播性。
发明内容
在一个示范实施例中,一种用于修改与光伏电池一起使用的玻璃产品的方法,包括:提供系统,定位系统中的一个或多个激光器,并且将通过该系统提供的预定能量定向到产品表面上的地形特征。在该实施例中,该系统包括定位成将预定能量定向到产品表面上的地形特征的一个或多个激光器。另外,预定能量修改产品表面上的地形特征的表面。
在另一个示范实施例中,具有增加的抗裂纹传播性的修改的产品包括产品表面上的地形特征。在该实施例中,已通过从一个或多个激光器定向的预定能量来修改地形特征。
在另一个示范实施例中,一种用于修改产品以提高抗裂纹传播性的系统,包括:定位成将预定能量定向到产品表面上的地形特征的一个或多个激光器。在该实施例中,预定能量通过去除碎屑和修复缺陷中的一个或多个方式来修改产品表面上的地形特征,修复包括产品的局部融化以提高抗裂纹传播性。
附图说明
图1示出了按照本公开的安装在基座上的薄膜模块。
图2是按照本公开的构成模块的电池的层系统的简图。
图3是按照本公开的用于形成模块的示范过程的过程流程图。
图4是按照本公开的系统的示范实施例。
图5-7是按照本公开的产品的示范实施例。
图8是按照本公开的修改玻璃产品的方法。
在可能的情况下,相同的参考标号将在附图中通篇用于表示相同的部件。
具体实施方式
提供用于生产具有通过能源修改的表面的产品的系统和方法,其中修改的表面基本没有碎屑且局部融化,以提高抗裂纹传播性。本公开的实施例可得到具有减少的或消除的边缘缺陷的产品、具有减少的或消除的边缘碎屑的产品、具有改善的美学的产品、和/或更清洁的产品。如在本文中使用的,术语“缺陷”指的是产品中非预期的物理和/或化学结构差异。如在本文中使用的,术语“碎屑”指的是可无意地物理和/或化学附连到产品表面的微粒和/或物质。
在本公开中,在将层描述为与另一层或衬底“相邻”或者在另一层或衬底“上”或“之上”时,要理解的是该层能够直接接触,或者能够插入另一层或特征。
图1示出了安装在基座103上的薄膜PV模块100。PV模块布置成接收光105。PV模块划分成串联布置的多个电池107。通过空间、非传导材料和/或分隔电路的其它结构来划分电池107。例如,电池107可通过由激光器划线形成的划线彼此隔离。当光105照射在PV模块100上时,产生了电。本公开并不局限于示出的布置,而是可包括其它安装布置和/或电池107。本公开的一个实施例包括薄膜CdTe太阳光伏(PV)模块。所述模块用来产生用于众多应用(例如,商业和住宅建筑物上的大型地面安装的系统和屋顶系统)的太阳电。
图2是构成PV模块100的电池107的层系统的简图。电池107的层包括超基片(superstrate)201、第一传导层203、缓冲层205、第一半导体层207、第二半导体层209、第二传导层211和封装玻璃213。电池107的层布置成在暴露于光105时生成和传导可用形式的电。
超基片201是其上生长薄膜的高透射玻璃片。超基片201在底层之前接收光105(参见例如图1)。超基片201可以是高透射、低铁浮法玻璃,或者具有对光的高透射率的任何其它适当的玻璃材料。在另一个实施例中,超基片201还可以是高透射硼硅玻璃。
在光105经过超基片201之后,光105经过第一传导层203。第一传导层203可以是透明传导氧化物(TCO),其准许极少吸收或没有吸收地使光透射。第一传导层203还是导电的,准许电传导以提供电池的串联布置。在一个实施例中,传导层是大约0.3pm的化学计量锡酸镉(标称Cd2SnO4)。
其它适当传导层可包括掺氟氧化锡、掺铝氧化锌、和/或氧化铟锡。第一传导层203可准许光105直通到半导体层(例如,第一半导体层207和第二半导体层209),同时还用作欧姆电极,以传输离开光吸收材料的光生电荷载流子。
缓冲层205与第一传导层203相邻。缓冲层205是更加电阻性的,并且保护电池107的层免于与玻璃的化学相互作用和/或可能从后续处理招致的相互作用。包含缓冲层205减少或阻止可在电池107上和在模块100上发生的电损耗或其它损耗。用于缓冲层205的适当材料可包括含氧化锌的材料,以及具有比第一传导层203更大电阻率且能保护电池的层免于与玻璃的相互作用或来自后续处理的相互作用的任何其它适当的阻隔材料。另外,包含缓冲层205准许形成第一半导体层207,其准许光子通过,同时保持能够生成电的高质量结。在某些实施例中,缓冲层205可被省略或者由另一种材料或层替代。在一个实施例中,缓冲层205包括ZnO和SnO2的组合。例如,缓冲层205可形成到大约0.1μm厚或以下的厚度,并且可包括具有大约一比二(1∶2)化学计量比的ZnO和SnO2。
如图2所示,第一半导体层207与缓冲层205相邻,并且在超基片201、第一传导层203和缓冲层205之后接收光105。第一半导体层207包括宽带隙n型半导体材料。用于第一半导体层207的适当半导体材料包括但不限于CdS、SnO2、CdO、ZnO、AnSe、GaN、In2O2、CdSnO、ZnS、CdZnS或者其它适当n型半导体材料。在一个实施例中,第一半导体层207包括CdS。第一半导体层207可具有从大约0.01至大约0.1μm的厚度。可通过化学浴槽沉积或者通过溅射来形成第一半导体层207。第一半导体层207优选地具有平滑表面,并且基本均匀而没有杂质和针孔。
第一半导体层207与第二半导体层209之间形成结,以引起电池107中的光伏效应,允许从光105生成电。第二半导体层209可包括Cd、CdTe或者其它p型半导体材料,当随第一半导体层207一起提供时,在暴露于光105时提供了光伏效应。
如图2所示,第二半导体层209与第一半导体层207相邻。第二传导层211与第二半导体层209相邻,并且提供能够传导在暴露给光105时从第一半导体层207和第二半导体层209的组合形成的电的导电材料。虽然图2示出了用于第一半导体层207和第二半导体层209的两层的布置,但是包括间隙层的任何数量的层可用于提供光伏效应。
第二传导层211可由任何适当传导材料以及它们的组合来制造。例如,适当材料包括的材料包括但不限于:石墨,金属的银、镍、铜、铝、钛、钯、铬、钼,以及金属的银、镍、铜、铝、钛、钯、铬和钼的合金及其任何组合。在一个实施例中,第二传导层211可以是石墨以及镍和铝合金的组合。
可与第二传导层211相邻地粘合封装玻璃213。封装玻璃213可以是适合与电池107的薄膜一起使用的刚性结构。封装玻璃213可以是与超基片201相同的材料,或者可以是不同的。另外,虽然图2中未示出,但是封装玻璃213可包括准许到电池107的布线和/或连接的开口或结构。
模块100和各个电池107可包括图3中未示出的其它层和结构。例如,超基片201和/或封装玻璃213可包括阻隔涂层或其它结构,以减少或阻止杂质扩散到层中。另外,封装玻璃213可包括粘合层,以将封装玻璃213粘合到层。可存在于模块100和/或电池107中的额外结构包括划线、总线结构、外部布线、以及对薄膜和/或PV结构有用的各种常规组件。
图3示出了用于形成模块100的示范过程的过程流程图。该过程包括形成电池107的薄膜堆叠的形成,其中膜或层在超基片201上形成(图2中由上向下示出)。
如图3的流程图中示出的,提供了超基片201(框301)。超基片201可由能够接收用作光伏电池的薄膜并且充分透明以允许光透射的任何适当材料来制造。
在提供超基片201之后,将第一传导层203沉积到超基片201上(框303)。第一传导层203是导电的,其准许电传导以提供电池107的串联布置。在一个实施例中,传导层203是大约0.3μm的化学计量锡酸镉(标称Cd2SnO4)。其它适当传导层可包括掺氟氧化锡、掺铝氧化锌、或氧化铟锡。能够例如通过直流(DC)或射频(RF)溅射来形成第一传导层203。在一个实施例中,第一传导层203是溅射到超基片201上的基本非晶Cd2SnO4的层。这种溅射能够以1比2的比率从包含化学计量量的SnO2和CdO的热压靶到超基片201上来执行。锡酸镉备选地能使用乙酸镉和氯化锡(II)前体,通过喷射热解(spray pyrolysis)来制备。
一旦施加了第一传导层203,则可将缓冲层205施加到第一传导层203(框305)。在一个实施例中,可例如通过溅射来形成缓冲层205。在一个示例中,可通过从包含大约67%(摩尔)SnO2和大约33%(摩尔)ZnO的化学计量量的热压靶溅射到第一传导层203上,来形成缓冲层205。当通过溅射来沉积时,用于缓冲层205的氧化锌锡材料可以是基本非晶的。层205可具有在大约200和3000埃之间或者在大约800和1500埃之间的厚度,以具有期望的机械、光学和电性质。缓冲层205可具有例如大约3.3eV或以上的宽光学带隙,以准许光透射。
第一半导体层207沉积在缓冲层205上(框307)。在一个实施例中,第一半导体层207例如可通过化学浴槽沉积或溅射来形成。第一半导体层207可沉积到从大约0.01至0.1μm的厚度。用作第一半导体层207的一种适当材料是CdS。用于CdS层的适当厚度可从大约500至800埃。第一半导体层207与第二半导体层209之间形成结,以产生电池107中的光伏效应,允许它从光105生成电。
在形成第一半导体层207之后,将第二半导体层209沉积在第一半导体层207上(框309)。第二半导体层209可包括Cd、CdTe或者其它p型半导体材料。第二半导体层209可通过扩散传输沉积、溅射或者用于沉积p型半导体薄膜材料的其它适当沉积方法来沉积。
在形成第二半导体层209之后,形成第二传导层211(框311)。第二传导层211可由任何适当传导材料来制造。第二传导层211可通过溅射、电沉积、丝网印刷、物理汽相沉积(PVD)、化学汽相沉积(CVD)或喷射来形成。在一个实施例中,第二传导层211是丝网印刷到表面上的石墨以及溅射其上的镍和铝合金的组合。
上述所有溅射步骤是在高纯度气氛下、以环境温度适当进行的磁控管溅射。但是,可使用其它沉积过程,包括较高温度溅射、电沉积、丝网印刷、物理汽相沉积(PVD)、化学汽相沉积(CVD)或喷射。另外,该处理可在连续线中提供,或者可以是一系列分批操作。当该过程是连续过程时,溅射室或沉积室被单独隔离,以及在各涂层循环期间达到涂层条件,并且重复进行。
一旦形成第二传导层211,就将封装玻璃213粘合到第二传导层211(框313)。封装玻璃213可以是适合与薄膜结构一起使用的刚性材料,并且可以是与超基片201相同的材料或不同的材料。封装玻璃213可使用任何适当方法粘合到第二传导层211。例如,封装玻璃213可使用粘合剂或其它接合成分来粘合到第二传导层211。
虽然图3中未示出,但是其它处理步骤可包含在用于形成模块100和电池107的过程中。例如,还可利用清洁、蚀刻、掺杂、介电或其它选择性绝缘材料沉积、间隙层的形成、划线、热处理、和布线。例如,可提供布线和/或总线装置,以完成PV电路(即,串联布置的电池107),并且提供PV电路到负载或其它外部装置的连通性。
划线可用于形成层之间的互连,并隔离薄膜堆叠的层和/或电池。划线可使用用于对薄膜层进行划线和/或互连的任何已知技术来完成。在一个实施例中,划线使用从一个或多个方向对准一层或多层的激光器来完成。一个或多个激光器划线可用于选择性地去除薄膜层,以及提供电池107的互连性和/或隔离。在一个实施例中,完成划线和层沉积以互连和/或隔离电池107,从而提供具有串联电布置的电池107的PV电路。
参照图4,产品401(例如,封装玻璃213和/或超基片201)的一个示范实施例能由系统400来修改。系统400能包括定位成将预定能量404定向到具有至少产品401的第一平面408和第二平面409的地形特征406的一个或多个激光器402,其中第一平面408与第二平面409不是共面的。例如,系统400可将激光器(一个或多个)402定向到隆起、边缘、角、凹槽或者任何其它适当的三维结构。系统400可通过使宽区域同时将能量定向到第一平面408和第二平面409来定向激光器(一个或多个)402,和/或系统400可通过调整朝向第一平面408中的点以及第二平面409中的点的激光器(一个或多个)402的位置,来定向激光器(一个或多个)402。
由系统400的激光器(一个或多个)402提供的预定能量404通过定位激光器(一个或多个)402并将预定能量404定向到产品401的表面410,来修改产品401的表面410。在一个实施例中,表面410的修改可在表面410的最浅部分更为显著,并在表面410的较深部分不太显著。例如,将预定能量404对准表面410可修改至预定深度的表面410的全部,可修改至预定深度的表面410的一些,和/或可以不影响表面410下面的部分。可修改表面410的一部分,或者可修改表面410的基本全部。修改表面(例如,通过清洁和/或修复)可在预定深度和/或预定频率处发生。因此,可部分地或完全地修改或去除待清洁区域(例如,碎屑414)和/或待修复区域(例如,裂缝(一个或多个)416)。
在一个示范实施例中,将预定能量404定向到产品401的第一平面408和产品401的第二平面409。在一个实施例中,产品401可包括如图5中示出的接缝玻璃(seamed glass)布置中的第一平面408和第二平面409。在另一个实施例中,产品401可包括如图6中示出的圆边加工玻璃布置中的第一平面408和第二平面409。在又一个实施例中,产品401可包括如图7中示出的矩形切削布置中的第一平面408和第二平面409。可将预定能量404提供给第一平面408和第二平面409之外的额外平面。
再次参照图4,激光器(一个或多个)402可以是能够提供预定能量404的任何适当激光器或者激光器的组合。可选择性地调整由激光器(一个或多个)402提供的预定能量404。选择性调整可基于调整激光器(一个或多个)402的类型、调整激光器(一个或多个)402的强度、调整一个激光器402相对于另一个激光器402的位置、和/或调整激光器(一个或多个)402相对于产品401的位置。在一个示范实施例中,系统400可包括:用于选择性调整/保持激光器(一个或多个)402和/或产品401的位置的运动系统412。例如,运动系统412可调整激光器(一个或多个)402和/或产品401的位置。调整可以是直线的或旋转的。在一个实施例中,多个激光器402可选择性地将改变等级的预定能量404定向到表面410以修改表面410。
产品401的表面410(包括第一平面408、第二平面409、和/或任何适当附加平面)可通过清洁来修改。通过蒸发碎屑414和/或通过使碎屑414不再粘合到表面410,清洁可去除碎屑414。为了清洁,可选择性地调整由激光器(一个或多个)402提供的预定能量404。用于清洁的选择性调整可基于碎屑414的类型,碎屑414和表面410之间接合的类型,在表面410上的碎屑414的位置/定位,表面410的成分,表面410的几何形状,和/或与碎屑414、激光器(一个或多个)402、和/或表面410相关联的其它适当性质。激光器(一个或多个)402的调整可基于预定能量404的强度和/或波长。
产品401的表面410(包括第一平面408、第二平面409、和/或任何适当额外平面)可通过修复来修改。一个或多个裂缝416的修复可包括产品401的表面410的局部融化。修复可包括将表面410的温度提高到预定等级,例如,融化温度。激光器(一个或多个)402和/或产品401的位置可基于产品401中的裂缝(一个或多个)416的深度、布置、和/或类型来调整。产品401的表面410的温度提高的深度可通过控制激光器(一个或多个)402来控制。用于修复的选择性调整可基于裂缝的类型,在表面410上的裂缝的位置/定位,表面410的成分,表面410的几何形状,和/或与裂缝、激光器(一个或多个)402和/或表面410相关联的其它适当性质。
参照图8,在一个示范实施例中,一种用于修改用于与光伏电池107一起使用的玻璃产品的方法800包括:提供系统(框802)、定位激光器(一个或多个)(框804)、以及将预定能量定向(框806)到产品401的表面410上的地形特征406。该系统可以是用于修改玻璃产品以提高抗裂纹传播性的任何适当系统。激光器(一个或多个)可以是能够定向预定能量的任何适当激光器(一个或多个)。
虽然已参照优选实施例描述了本公开,但是本领域技术人员将理解,可进行各种调整且等效方案可代替其中的元件,而没有背离本公开的范围。另外,可对本公开的教导进行多种修改以适合具体状况或材料,而没有背离其实质范围。因此,预期的是本公开并不局限于作为期望用于执行本公开的最佳模式而公开的具体实施例,而是预期本公开将包括落入所附权利要求范围之内的所有实施例。
100 | PV模块 |
103 | 基座 |
105 | 光 |
107 | 电池 |
201 | 超基片 |
203 | 第一传导层 |
205 | 缓冲层 |
207 | 第一半导体层 |
209 | 第二半导体层 |
211 | 第二传导层 |
213 | 封装玻璃 |
400 | 系统 |
401 | 产品 |
402 | 激光器 |
404 | 预定能量 |
406 | 地形特征 |
408 | 第一平面 |
409 | 第二平面 |
410 | 表面 |
412 | 运动系统 |
414 | 碎屑 |
416 | 裂缝(一个或多个) |
Claims (10)
1.一种用于修改与光伏电池一起使用的玻璃产品(401)的方法,所述方法包括:
提供系统(400),所述系统(400)包括:
一个或多个激光器(402),定位成将预定能量(404)定向到所述产品(401)的表面上的地形特征(406);并且
其中,所述预定能量(404)修改所述产品(401)表面上的所述地形特征(406)的表面(410);
定位所述一个或多个激光器(402);以及
将所述预定能量(404)定向到所述产品(401)的所述表面(410)上的所述地形特征(406)。
2.如权利要求1所述的方法,其中,通过去除碎屑(414)来修改所述产品(401)的所述表面(410)上的所述地形特征(406)。
3.如权利要求1所述的方法,其中,通过修复来修改所述产品(401)的所述表面(410)上的所述地形特征(406),所述修复包括局部融化以提高抗裂纹传播性。
4.如权利要求1所述的方法,还包括选择性地保持所述产品(401)和所述一个或多个激光器(402)之间的一个或多个预定距离。
5.如权利要求1所述的方法,其中,所述产品(401)是用于接收薄膜层的玻璃衬底。
6.如权利要求5所述的方法,其中,所述玻璃是所述光伏电池的封装玻璃(213)。
7.如权利要求6所述的方法,其中,所述光伏电池包括超基片(201)、第一传导层(203)、缓冲层(205)、第一半导体层(207)、第二半导体层(209)、第二传导层(211)以及封装玻璃(213)。
8.如权利要求5所述的方法,其中,所述玻璃是具有高透射的低铁浮法玻璃或硼硅玻璃的超基片(201)。
9.如权利要求1所述的方法,其中,所述地形特征(406)选自隆起、边缘、角和凹槽组成的三维结构组。
10.如权利要求5所述的方法,其中,所述地形特征(406)选自隆起、边缘、角和凹槽组成的三维结构组。
Applications Claiming Priority (2)
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US12/818,717 US20110308610A1 (en) | 2010-06-18 | 2010-06-18 | System and method for modifying an article and a modified article |
US12/818717 | 2010-06-18 |
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CN102329085A true CN102329085A (zh) | 2012-01-25 |
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CN2011101754464A Pending CN102329085A (zh) | 2010-06-18 | 2011-06-17 | 用于修改产品的系统和方法以及修改的产品 |
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US (1) | US20110308610A1 (zh) |
EP (1) | EP2397450A3 (zh) |
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DE102006062019A1 (de) * | 2006-12-29 | 2008-07-03 | Näbauer, Anton, Dr. | Verfahren zur Herstellung von mechanisch stabilen Dünnschicht Photovoltaik Solarmodulen unter Verwendung von Glas |
DE202008006110U1 (de) * | 2008-05-03 | 2008-10-16 | 4Jet Sales + Service Gmbh | Vorrichtung zur Randentschichtung bei großflächigen Solarzellen |
US20090194165A1 (en) * | 2008-01-31 | 2009-08-06 | Primestar Solar, Inc. | Ultra-high current density cadmium telluride photovoltaic modules |
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US5961852A (en) * | 1997-09-09 | 1999-10-05 | Optical Coating Laboratory, Inc. | Laser scribe and break process |
DE10228743B4 (de) * | 2002-06-27 | 2005-05-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Glätten und Polieren von Oberflächen durch Bearbeitung mit Laserstrahlung |
JP2004292247A (ja) * | 2003-03-27 | 2004-10-21 | Fujikura Ltd | ガラス基板の接合方法 |
US7666508B2 (en) * | 2007-05-22 | 2010-02-23 | Corning Incorporated | Glass article having a laser melted surface |
JP5465235B2 (ja) * | 2008-05-01 | 2014-04-09 | コーニング インコーポレイテッド | 透明基板上の隆起特徴構造および関連方法 |
EP2480342B1 (en) * | 2009-09-22 | 2021-02-24 | First Solar, Inc | System and method for tracking and removing coating from an edge of a substrate |
KR101206608B1 (ko) * | 2009-11-17 | 2012-11-29 | (주)엘지하우시스 | 유리기판의 레이저 실링장치 |
-
2010
- 2010-06-18 US US12/818,717 patent/US20110308610A1/en not_active Abandoned
-
2011
- 2011-06-06 AU AU2011202690A patent/AU2011202690A1/en not_active Abandoned
- 2011-06-10 EP EP11169630.8A patent/EP2397450A3/en not_active Withdrawn
- 2011-06-17 CN CN2011101754464A patent/CN102329085A/zh active Pending
Patent Citations (4)
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US6747243B1 (en) * | 2002-12-24 | 2004-06-08 | Novellus Systems, Inc. | Spot cleaning of particles after inspection |
DE102006062019A1 (de) * | 2006-12-29 | 2008-07-03 | Näbauer, Anton, Dr. | Verfahren zur Herstellung von mechanisch stabilen Dünnschicht Photovoltaik Solarmodulen unter Verwendung von Glas |
US20090194165A1 (en) * | 2008-01-31 | 2009-08-06 | Primestar Solar, Inc. | Ultra-high current density cadmium telluride photovoltaic modules |
DE202008006110U1 (de) * | 2008-05-03 | 2008-10-16 | 4Jet Sales + Service Gmbh | Vorrichtung zur Randentschichtung bei großflächigen Solarzellen |
Also Published As
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EP2397450A2 (en) | 2011-12-21 |
EP2397450A3 (en) | 2014-06-18 |
US20110308610A1 (en) | 2011-12-22 |
AU2011202690A1 (en) | 2012-01-19 |
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