CN102324866A - H-bridge inverter circuit - Google Patents
H-bridge inverter circuit Download PDFInfo
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- CN102324866A CN102324866A CN201110302550A CN201110302550A CN102324866A CN 102324866 A CN102324866 A CN 102324866A CN 201110302550 A CN201110302550 A CN 201110302550A CN 201110302550 A CN201110302550 A CN 201110302550A CN 102324866 A CN102324866 A CN 102324866A
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- inverter circuit
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- half bridge
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
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Abstract
The invention relates to a direct current (DC)/alternating current (AC) inverter circuit. An H-bridge inverter circuit comprises power switch elements forming bridge arms, wherein the power switch elements of an upper half bridge adopt two insulated gate bipolar transistors (IGBT), and the power switch elements of a lower half bridge adopt two metal-oxide-semiconductor field effect transistors (MOSFET); the collectors of the two IGBTs of the upper half bridge are connected with the anode of a power supply, and the emitters of the two IGBTs of the upper half bridge are connected with the sources of the two MOSFETs of the lower half bridge respectively; the drains of the two MOSFETs of the lower half bridge are connected with a power ground; and joints of the emitters of the IGBTs of the upper half bridge and the sources of the MOSFETs of the lower half bridge form the output end of the H-bridge inverter circuit. Compared with the conventional H-bridge inverter circuit, the H-bridge inverter circuit has relatively higher efficiency under the service condition of either light load or full load, and has remarkable energy saving effects. Simultaneously, the H-bridge inverter circuit can reduce electromagnetic interference and pollutions to a power grid, and can be widely applied to various inverters such as photovoltaic power generation inverters, wind power generation inverters, square wave inverters, sine wave inverters and the like.
Description
Technical field
The present invention relates to a kind of DC/AC inverter circuit, particularly relate to a kind of efficient H bridge circuit inverter circuit.Specifically be applied in the various inverters, like photovoltaic inversion device, wind power generation inverter, square-wave inverter, sinewave inverter or the like.
Background technology
At present, in the design of common H bridge inverter circuit was used, four brachium pontis adopted identical power switch pipe (adopting IGBT pipe or MOSFET pipe), and IGBT is the device that is used at most.Because the nonlinear characteristic of IGBT conduction voltage drop makes the conduction voltage drop of IGBT significantly to increase along with the increase of electric current.Thereby guaranteed inverter under the maximum load situation, still can keep lower loss and higher efficient.And in the design of high-frequency inverter circuit is used; The MOSFET pipe is then by extensive employing, though the conduction voltage drop of MOSFET pipe is linear, it has unsurpassed dynamic characteristic and high-frequency work ability again; Therefore in the high-frequency inverter circuit of outstanding frequency characteristic, usually select the MOSFET pipe for use.
Shown in Figure 1 is a kind of H bridge inverter circuit commonly used at present, is a kind of H bridge inverter circuit that is made up of G30T60.Its inversion course of work is: when the control signal PWM1 of control circuit control IGBT1, IGBT2 conducting; When the IGBT3 of control signal PWM2 control simultaneously, IGBT4 shutoff, the sense of current is by the positive VDH of DC source, through IGBT1; AC1; AC load (or alternating current source), AC2, IGBT2 is to the direct current seedbed.When the control signal PWM2 of control circuit control IGBT4, IGBT3 conducting; The IGBT1 of control signal PWM1 control simultaneously, when IGBT2 turn-offs, the sense of current is by the positive VDH of DC source, through IGBT4, AC2, AC load, AC1, IGBT2 is to the direct current seedbed.In a cycle period, the electric current that flows through on the AC load is to exchange.
No matter be the H bridge inverter circuit that adopts IGBT to form, or the H bridge inverter circuit that adopts the MOSFET pipe to form, in practical application, all there is unfavorable place:
When 1, adopting IGBT, because the nonlinear characteristic of IGBT conduction voltage drop makes the conduction voltage drop of IGBT significantly to increase along with the increase of conducting electric current, when operating at full capacity, the inversion conversion efficiency is higher; Otherwise because the nonlinear characteristic of IGBT conduction voltage drop makes the conduction voltage drop of IGBT significantly to reduce along with reducing of conducting electric current, in the light hours, the inversion conversion efficiency is relatively low.Be because the switching frequency of IGBT is low on the other hand, the frequency characteristic of the H bridge inverter circuit of therefore being made up of IGBT is undesirable.
When 2, adopting the MOSFET pipe, frequency characteristic has improved, but because the conduction voltage drop of MOSFET pipe is linear, makes the conduction voltage drop of MOSFET significantly to increase along with the increase of conducting electric current, and when operating at full capacity, the inversion conversion efficiency is lower; Otherwise the conduction voltage drop of MOSFET also can significantly reduce along with reducing of conducting electric current, and in the light hours, the inversion conversion efficiency is higher relatively.
3, inversion efficiency can change with prime DC source variable power.The H bridge inverter circuit that adopts IGBT to form, inversion efficiency can increase with the increase of prime DC source power; The H bridge inverter circuit that adopts MOSFET to form, inversion efficiency can reduce with the increase of prime DC source power.In photovoltaic inversion device or wind power generation inverter, it is more outstanding that the shortcoming of this circuit manifests.
Summary of the invention
The present invention is directed to the prior art deficiency, propose a kind of more high efficiency H bridge inverter circuit,, higher efficient is arranged all no matter load is in underloading work or under fully loaded working condition.
The technical scheme that the present invention adopted:
A kind of H bridge inverter circuit; Comprise the power switch component of forming brachium pontis; The power switch component of said H bridge inverter circuit has adopted IGBT pipe and MOSFET pipe simultaneously, and the power switch component of wherein going up half-bridge adopts two IGBT pipes, and the power switch component of following half-bridge adopts two MOSFET pipes; The collector electrode of wherein going up two IGBT pipes of half-bridge connects positive source (VDH); The emitter of two IGBT pipes connects down the source electrode of two MOSFET pipes of half-bridge respectively, and the drain electrode of two MOSFET pipes of following half-bridge connects power supply ground (GND), and the connected node of the source electrode of the emitter of the IGBT pipe of last half-bridge and the MOSFET pipe of following half-bridge is formed the output of H bridge inverter circuit.
Described H bridge inverter circuit, between the collector electrode of two IGBT of last half-bridge pipe and emitter, be parallel with respectively the protection diode (D1, D4), the negative pole of said protection diode connects positive source (VDH); Between the source electrode of following two MOSFET pipes of half-bridge and drain electrode, be parallel with respectively and protect diode (D3, D2), the positive pole of said protection diode connects power supply ground (GND).
Useful good effect of the present invention:
1, the present invention no matter load is in underloading work or under fully loaded working condition, has higher efficient with respect to existing H bridge inverter circuit, has remarkable energy saving effect.
Use the present invention can make the inversion efficiency of inversion bridge circuit improve the 2-4% point than prior art.As be applied in per hour can multiple electric 72w-144w on the photovoltaic inversion device of a 3.6kw.
The theoretical foundation that the present invention can improve inversion efficiency is; Because the IGBT of last half-bridge pipe is only as the current polarity control device; Its switching frequency has only 50Hz; Make full use of the characteristic of the low conduction voltage drop of big electric current of IGBT, avoided the weakness of IGBT pipe high frequency characteristics difference, thereby reduced the output electromagnetic interference of total losses and inverter.The amplitude of the sinusoidal ac of exporting by the following MOSFET management and control system inverter circuit of half-bridge; Its switching frequency is operated in about 30KHz; The high frequency characteristics that has made full use of the MOSFET pipe is the characteristic of linearity with conduction voltage drop, with the variation that adapts to AC load and the variation of prime DC source power.
2, use the present invention, can reduce electromagnetic interference and the pollution of inverter electrical network.In original inverter circuit; (IGBT1 and IGBT2 are to arm to upper and lower power switch pipe to arm among Fig. 1; IGBT3 and IGBT4 are to arm) be operated in same frequency; And the IGBT of upper arm pipe only is operated in 50Hz among the present invention, compares the switching frequency that greatly reduces pipe with prior art, has therefore reduced electromagnetic interference and the pollution of inverter to electrical network.
Description of drawings
Fig. 1: prior art H bridge inverter circuit schematic diagram;
Fig. 2: H bridge inverter circuit schematic diagram of the present invention.
Embodiment
Embodiment one: referring to Fig. 2; The H bridge inverter circuit that constitutes by IGBT and MOSFET for the present invention; What they were different with prior art is: said H bridge circuit inverter circuit has adopted IGBT pipe and MOSFET pipe simultaneously; The switching tube of last half-bridge has adopted two IGBT pipes, and the switching tube of following half-bridge has adopted two MOSFET pipes.
The inversion course of work of H bridge inverter circuit of the present invention is: when one tunnel control signal PWM of control circuit control IGBT1 conducting, IGBT4 turn-off; When the MOSFET2 of another road control signal SPWM of control circuit control simultaneously conducting, MOSFET3 shutoff, the sense of current is by the positive VDH of DC source, through IGBT1; AC1; AC load (or alternating current source), AC2, MOSFET2 is to the direct current seedbed; When the control signal PWM of control circuit control IGBT4 conducting, IGBT1 turn-off; The MOSFET3 of control signal SPWM control simultaneously conducting, when MOSFET2 turn-offs, the sense of current is by the positive VDH of DC source, through IGBT4, AC2, AC load, AC1, MOSFET3 is to the direct current seedbed; In a cycle period, the electric current that flows through on the AC load is to exchange.The amplitude of the alternating current that inversion goes out is by frequency and the duty ratio decision of control signal SPWM.
In the original inverter circuit of Fig. 1; (IGBT1 and IGBT2 are to arm to the arm pipe up and down; IGBT3 and IGBT4 are to arm) be operated in same frequency; And the IGBT of upper arm pipe only is operated in 50Hz among the present invention, compares the switching frequency that greatly reduces pipe with prior art, has therefore reduced electromagnetic interference and the pollution of inverter to electrical network.
Find out that from Fig. 1 and Fig. 2 contrast H bridge circuit inverter circuit difference with the prior art of the present invention is: the switching tube of going up half-bridge has adopted two IGBT pipes, and the switching tube of following half-bridge has adopted two MOSFET pipes.On the work control mode, H bridge circuit inverter circuit of the present invention adopts bifrequency (one road high frequency and one road low frequency) control mode.The IGBT of last half-bridge pipe is only as the current polarity control device, and the polarity of the sinusoidal ac that is gone out by pwm control signal control inversion is operated in power frequency 50Hz; The MOSFET of following half-bridge pipe carries out the SPWM high frequency and switches, and by the amplitude of the sinusoidal ac of SPWM control signal control inverter circuit output, its operating frequency is at 20kHz-40KHz.
Claims (2)
1. H bridge inverter circuit; Comprise the power switch component of forming brachium pontis; It is characterized in that: the power switch component of said H bridge inverter circuit has adopted IGBT pipe and MOSFET pipe simultaneously; The power switch component of wherein going up half-bridge adopts two IGBT pipes; The power switch component of following half-bridge adopts two MOSFET pipes, and the collector electrode of two IGBT pipes of last half-bridge connects positive source (VDH), and the emitter of two IGBT pipes of last half-bridge connects down the source electrode of two MOSFET pipes of half-bridge respectively; The drain electrode of two MOSFET pipes of following half-bridge connects power supply ground (GND), and the connected node of the source electrode of the emitter of the IGBT pipe of last half-bridge and the MOSFET pipe of following half-bridge is formed the output of H bridge inverter circuit.
2. H bridge inverter circuit according to claim 1 is characterized in that: between the collector electrode of two IGBT of last half-bridge pipe and emitter, be parallel with respectively the protection diode (D1, D4), the negative pole of said protection diode connects positive source (VDH); Between the source electrode of following two MOSFET pipes of half-bridge and drain electrode, be parallel with respectively and protect diode (D3, D2), the positive pole of said protection diode connects power supply ground (GND).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110302550A CN102324866A (en) | 2011-10-09 | 2011-10-09 | H-bridge inverter circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110302550A CN102324866A (en) | 2011-10-09 | 2011-10-09 | H-bridge inverter circuit |
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| CN102324866A true CN102324866A (en) | 2012-01-18 |
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| CN201110302550A Pending CN102324866A (en) | 2011-10-09 | 2011-10-09 | H-bridge inverter circuit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287975A (en) * | 1988-09-22 | 1990-03-28 | Toshiba Corp | Single-phase inverter |
| CN101233675A (en) * | 2005-09-08 | 2008-07-30 | 东芝开利株式会社 | Inverter device and refrigeration cycle device |
| CN102130622A (en) * | 2011-04-07 | 2011-07-20 | 上海威特力焊接设备制造股份有限公司 | High-efficiency photovoltaic inverter |
| CN202261070U (en) * | 2011-10-09 | 2012-05-30 | 郑州朗睿科技有限公司 | H-bridge inverter circuit |
-
2011
- 2011-10-09 CN CN201110302550A patent/CN102324866A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287975A (en) * | 1988-09-22 | 1990-03-28 | Toshiba Corp | Single-phase inverter |
| CN101233675A (en) * | 2005-09-08 | 2008-07-30 | 东芝开利株式会社 | Inverter device and refrigeration cycle device |
| CN102130622A (en) * | 2011-04-07 | 2011-07-20 | 上海威特力焊接设备制造股份有限公司 | High-efficiency photovoltaic inverter |
| CN202261070U (en) * | 2011-10-09 | 2012-05-30 | 郑州朗睿科技有限公司 | H-bridge inverter circuit |
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Application publication date: 20120118 |