CN102324437A - Composite wafer for prolonging service life of energy-saving lamp as well as preparation method and application thereof - Google Patents
Composite wafer for prolonging service life of energy-saving lamp as well as preparation method and application thereof Download PDFInfo
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- CN102324437A CN102324437A CN201110101447A CN201110101447A CN102324437A CN 102324437 A CN102324437 A CN 102324437A CN 201110101447 A CN201110101447 A CN 201110101447A CN 201110101447 A CN201110101447 A CN 201110101447A CN 102324437 A CN102324437 A CN 102324437A
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- saving lamp
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- composite crystal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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Abstract
The invention discloses a composite wafer for prolonging the service life of an energy-saving lamp as well as a preparation method and application thereof. The composite wafer comprises pins, a packaging layer, electrode layers and composite-wafer layers, wherein the composite-wafer layers comprise a first wafer layer and a second wafer layer. The preparation method of the composite wafer comprises the following steps of: forming a laminated structure through the processes of preprocessing, molding, sintering, electric polarization and the like of the two mixed formula materials of the first wafer layer and the second wafer layer, and then slicing and packaging. The composite wafer disclosed by the invention is connected in parallel to both ends of a resonant capacitor of the energy-saving lamp, so that the service life of the energy-saving lamp is prolonged.
Description
Technical field
The present invention relates to a kind of prolong the energy-saving lamp composite crystal in useful life.
Background technology
The formal title of electricity-saving lamp is the rare-earth trichromatic integral fluorescent lamp, is born in the PHILIPS Co. of Holland the seventies.Its light source only need expend the 1/4-1/5 of ordinary incandescent lamp power consumption under the prerequisite that reaches same light output, practice thrift a large amount of electric consumption on lighting and expense, therefore is called as electricity-saving lamp; Principal item has types such as U type, spiral type, straight type, rack integral.China has manufactured experimently out electricity-saving lamp in the eighties, but owing to do not grasp key technology, the electricity-saving lamp life-span of being produced had only about 2000 hours; Light efficiency is than external product low 40%; After 1996, China's electricity-saving lamp technology makes progress, and the life-span of electricity-saving lamp was brought up to more than 5000 hours; Light efficiency is brought up to 5 to 6 times of incandescent lamp, and energy-saving effect is comparatively obvious; At present, national annual production reaches 300,000,000, and electricity-saving lamp useful life of national regulation is generally about 6000 hours; Because the high-tension impact of startup high electric current of moment causes damage to a certain degree to the filament of fluorescent tube; Therefore the actual life of electricity-saving lamp in close relations with the number of times that opens and closes electricity-saving lamp, the every switch of electricity-saving lamp once, the life-span reduces three hours; Useful life, the aspect still had significant limitation; Generally also be no more than 7000 hours, and price is higher, main use characteristic shows as " power saving does not save money ".It is reported that only the domestic gas discharge class light fixture quantity that abandons because of damage at present of China causes great pollution to environment up to 200,015,000 in the time of the waste resource, the ambitious goal of China being promoted conservation-minded society will play negative effect.Therefore, how to solve the problem in useful life of electricity-saving lamp, become the problem that needs to be resolved hurrily in the industry.
Summary of the invention
The objective of the invention is in order to overcome above-mentioned defective, a kind of energy-saving lamp composite crystal in useful life that prolongs is provided.
Another object of the present invention provides a kind of preparation method of composite crystal.
A further object of the invention is with the application of the present invention on energy-saving lamp.
The invention provides a kind of energy-saving lamp composite crystal in useful life that prolongs; Comprise pin, encapsulated layer, electrode layer and composite crystal layer; It is characterized in that: described composite crystal layer comprises first wafer layer and second wafer layer; First wafer layer and second wafer layer be the connection electrode layer respectively, and electrode layer connects pin, and pin one end and electrode layer and composite crystal layer are located in the encapsulated layer.
Preferred first wafer layer is by nano level ZnO, Sb
2O
3, MnO
2, Co
2O
3, Bi
2O
3, Nd preparation.
Preferred second wafer layer is (Ba0.75Ni0.15Sr0.08Ca0.02) Ti1.0+0.26%Nd by formulation
2O
5Add 0.15%Mn and 3%SiO again after mixing the powder of forming
2Preparation.
The present invention also provides a kind of the present invention of preparation to prolong the preparation method of the composite crystal in energy-saving lamp useful life; This method comprises two kinds of mixing formula materials of first wafer layer and second wafer layer and to form through section and encapsulation through preliminary treatment, moulding, sintering, by technology cambium layer stack structures such as electrodes again.
Pretreated first wafer layer of the present invention is by nanoscale ZnO, Sb
2O
3, MnO
2, CO
2O
3, Bi
2O
3, Nd forms through fine grinding, pre-burning, granulation, said pretreated second wafer layer is by formulation (Ba0.75N i0.15Sr0.08Ca0.02) Ti1.0+0.26%Nd
2O
5Add 0.15%Mn and 3%SiO after mixing the powder process pre-burning of forming
2, pass through fine grinding again, granulation forms.
Moulding of the present invention is that pretreated first wafer layer is put into the pressure forming mould; With the pressure precompressed of forcing press with every square centimeter of 80-100KG; Putting into pretreated second wafer layer again forms with the pressure static pressure demoulding in 8-10 minute of forcing press with every square centimeter of 150KG; Obtaining every layer thickness is 1.5mm, the soft embryo spare of integral thickness 3mm.
Sintering of the present invention is that the soft embryo spare after the demoulding is heated to 1280 ℃ with the programming rate of 2 degrees centigrade of per minutes, keeps 3 hours sintering time, reduces to normal temperature with per minute 5-20 ℃ speed then, promptly gets hard embryo spare.
Of the present invention is that hard embryo spare two sides is coated with conductive silver paste uniformly by electrode, under 850 ℃ temperature, handles and processes workprint in 20 minutes, then workprint is required to cut into rectangle, circle or special-shaped chip according to shape and size.
Encapsulation of the present invention is with the wicking welding back dipping organic siliconresin in tinned conductor of the chip gripper after the cutting, again dipping epoxy resin or put into shell and form with the can epoxy encapsulation.
Carrying out fine grinding through the ultrasonic wave homogenizer after simple the mixing before, described first wafer layer and two kinds of mixing formula materials of second wafer layer are pre-mixed processing.
Described encapsulation also comprises puts into mould with wicking welding back chip, can carry out injection moulding, die casting or moulding by casting.
The application of the present invention on energy-saving lamp is connected in parallel on composite crystal of the present invention at the resonant capacitance two ends of energy-saving lamp.
Electricity operation principle of the present invention is: respond to the voltage greater than 1000V at the resonant capacitance two ends when electricity-saving lamp starts moment; It is luminous that this voltage breakdown fluorescent tube starts fluorescent tube; This moment starts the impact that the consequence of being brought is high pressure, big electric current; Cause filament in the fluorescent tube to lose efficacy in a short time or blow, cause scrapping of energy-saving lamp.And the present invention is parallel to energy-saving lamp resonant capacitance two ends, and the composite crystal rate of the first wafer layer ZnO crystal grain wherein of the present invention is very low, and the composite crystal rate of grain boundary layer is very high; Contacted two ZnO intergranules have formed a potential barrier that is equivalent to Zener diode, and many crystal grain boundaries with Zener diode potential barrier have constituted a kind of voltage-current characteristic and have been nonlinear senser, and voltage-current characteristic is symmetrical; Under the normal voltage condition; Be equivalent to a small capacitor, and when overvoltage appearred in circuit, its internal resistance descended sharply and conducting rapidly; Operating current increases several magnitude, and first wafer layer of this moment can be considered straight-through.The intercrystalline interface of second wafer layer is equivalent to a potential barrier, and when temperature was hanged down, because the effect of internal electric field causes electronics to cross potential barrier, this moment, the composite crystal value was less.When temperature was elevated near the Curie-point temperature (being critical temperature), internal electric field was damaged, and potential barrier raises, and this moment, the composite crystal value increased suddenly.When electricity-saving lamp starts moment, respond to voltage at the resonant capacitance two ends, because the present invention is parallel to energy-saving lamp resonant capacitance two ends, the rapid conducting of the first wafer layer overvoltage greater than 1000V; Second wafer layer composite crystal value this moment is less, and starting current process tube filament and the present invention are to the slow preheating of filament, because the existence of the less composite crystal value of second wafer layer, this moment, magnitude of voltage can't start fluorescent tube; Along with second wafer layer temperature under the effect of preheat curent progressively raises; When reaching Curie-point temperature, the composite crystal value increases suddenly, and preheating is accomplished; Fluorescent tube is lighted thereupon; First wafer layer is because no overvoltage is in high resistant or off state, and the present invention's this moment is equivalent to small capacitor of parallel connection at the resonant capacitance two ends; This shows that the present invention is that energy-saving lamp increases preheat function, postpone the heating time of tube filament and high pressure, heavy current impact when not started, thus the useful life of prolonging lamp tube.
Beneficial effect of the present invention is, composite crystal technical indicator of the present invention, and bring up to 20000 hours the useful life on energy-saving lamp, and light efficiency is brought up to more than 10 times of incandescent lamp, and energy-saving effect reaches more than 80%.
Existing industry standard and technical parameter of the present invention contrast tabulation
Description of drawings
Fig. 1 is a composite crystal structure generalized section of the present invention
Embodiment
Do to describe in further detail below in conjunction with the accompanying drawing specific embodiments of the invention.
A kind of energy-saving lamp composite crystal in useful life that prolongs as shown in Figure 1; Comprise pin 1,2, encapsulated layer 3, electrode layer 4,7 and composite crystal layer 5,6, composite crystal layer of the present invention comprises first wafer layer 5 and second wafer layer, 6, the first wafer layer, 5 connection electrode layers 4; Second wafer layer, 6 connection electrode layers 7; Electrode layer 4 connects pin 1, and electrode layer 7 connects pin 2, and pin 2 one ends and electrode layer 4.7 are located in the encapsulated layer 3 with composite crystal layer 5.6.Preferred first wafer layer 5 is by nano level ZnO, Sb
2O
3, MnO
2, CO
2O
3, Bi
2O
3, Nd preparation, preferred first wafer layer, 5 its preparation materials can change in than scope hundred parts of weight, nano level ZnO content is 80~90%, Sb
2O
3Content is 3~6%, MnO
2Content is 1~3%, Co
2O
3Content is 1~2%, Bi
2O
3Content is 3~5%, Nd content is 0.1~1%.Hundred parts of preferential weight of its preparation materials of first wafer layer 5 are for nano level ZnO content is 88%, Sb
2O
3Content is 4.4%, MnO
2Content is 1.8%, Co
2O
3Content is 1.2%, Bi
2O
3Content is 4%, Nd content is 0.6%.Preferred second wafer layer is (Ba0.75Ni0.15Sr0.08Ca0.02) Ti1.0+0.26%Nd by formulation
2O
5Add 0.15%Mn and 3%SiO again after mixing the powder of forming
2Preparation.
A kind of preparation method's of the present invention embodiment will be provided below: first wafer layer 5 and 6 two kinds of mixing formula material mixing of second wafer layer after the ultrasonic wave homogenizer is spared matter respectively, are added ball mill then respectively and carried out fine grinding 10-15 hour; To pass through the pre-burning 1.5 hours under 480 ℃ condition of first wafer after the ball milling operation, it is subsequent use through mediating the back granulation to take out the poly-vinyl alcohol solution that the back adds an amount of 3-5% concentration; The pre-burning 2 hours under 1100 ℃ condition of second wafer after the ball milling operation be will pass through, 0.15%Mn and 3%SiO2 added, subsequent use through the poly-vinyl alcohol solution that adds an amount of 3-5% concentration behind the ball milling again through mediating the back granulation; The first subsequent use wafer particle is added die cavity according to the size of mold cavity according to weight ratio; With the pressure precompressed of forcing press with every square centimeter of 80-100KG; Layer thickness is about about 2mm after the precompressed; Put into the second subsequent use wafer particle again with pressure static pressure 8-10 minute after the demoulding of forcing press with every square centimeter of 150KG, obtaining thickness is the soft embryo spare of 3mm; Soft embryo spare after the demoulding is put into stove and accessory; Heat to 1280 ℃ with the programming rate of 2 degrees centigrade of per minutes; Keep 3 hours sintering time, reduce to normal temperature with per minute 5-20 ℃ speed then after, the two sides is coated with conductive silver paste uniformly; Under 850 ℃ temperature, handled 20 minutes, require to cut into rectangle, circle or special-shaped chip according to shape and size then; With the wicking welding back dipping organic siliconresin in tinned conductor of the chip gripper after the cutting, dipping epoxy resin or put into shell and use the can epoxy encapsulation again.
The application of the present invention on energy-saving lamp; Be the resonant capacitance two ends that composite crystal of the present invention are connected in parallel on energy-saving lamp; Be to increase preheat function for energy-saving lamp; Postpone the heating time of tube filament and high pressure, heavy current impact when not started, thus the useful life of prolonging lamp tube filament.
Claims (8)
1. one kind prolongs the energy-saving lamp composite crystal in useful life; Comprise pin, encapsulated layer, electrode layer and composite crystal layer; It is characterized in that: described composite crystal layer comprises first wafer layer and second wafer layer; First wafer layer and second wafer layer be the connection electrode layer respectively, and electrode layer connects pin, and pin one end and electrode layer and composite crystal layer are located in the encapsulated layer.
2. a kind of energy-saving lamp composite crystal in useful life that prolongs according to claim 1, it is characterized in that: described first wafer layer is by nano level ZnO, Sb
2O
3, MnO
2, Co
2O
3, B1
2O
3, Nd preparation.
3. a kind of energy-saving lamp composite crystal in useful life that prolongs according to claim 1 is characterized in that: described second wafer layer is (Ba0.75Ni0.15Sr0.08Ca0.02) Ti1.0+0.26%Nd by formulation
2O
5Add 0.15%Mn and 3%SiO again after mixing the powder of forming
2Preparation.
4. a kind of energy-saving lamp composite crystal in useful life that prolongs according to claim 2 is characterized in that: its preparation material of said first wafer layer can change in than scope hundred parts of weight, and nano level ZnO content is 80~90%, Sb
2O
3Content is 3~6%, MnO
2Content is 1~3%, Co
2O
3Content is 1~2%, Bi
2O
3Content is 3~5%, Nd content is 0.1~1%.
5. preparation method who prolongs the composite crystal in energy-saving lamp useful life, this method may further comprise the steps:
Preliminary treatment: pretreated first wafer layer is by nanoscale ZnO, Sb
2O
3, MnO
2, CO
2O
3, Bi
2O
3, Nd forms through fine grinding, pre-burning, granulation, pretreated second wafer layer is by formulation (Ba0.75Ni0.15Sr0.08Ca0.02) Ti1.0+0.26%Nd
2O
5Add 0.15%Mn and 3%SiO after mixing the powder process pre-burning of forming
2, pass through fine grinding again, granulation forms;
Moulding: pretreated first wafer layer is put into the pressure forming mould; With the pressure precompressed of forcing press with every square centimeter of 80-100KG; Putting into pretreated second wafer layer again forms with the pressure static pressure demoulding in 8-10 minute of forcing press with every square centimeter of 150KG; Obtaining every layer thickness is 1.5mm, the soft embryo spare of integral thickness 3mm;
Sintering: the soft embryo spare after the demoulding is heated to 1280 ℃ with the programming rate of 2 degrees centigrade of per minutes, keep 3 hours sintering time, reduce to normal temperature with per minute 5-20 ℃ speed then, promptly get hard embryo spare;
By electrode: hard embryo spare two sides is coated with conductive silver paste uniformly, under 850 ℃ temperature, handles and processed workprint in 20 minutes, then workprint is required to cut into rectangle, circle or special-shaped chip according to shape and size;
Encapsulation: the chip gripper after will cut is the back dipping organic siliconresin of wicking welding in tinned conductor, again dipping epoxy resin or put into shell and form with the can epoxy encapsulation.
6. a kind of preparation method who prolongs the composite crystal in energy-saving lamp useful life according to claim 5 is characterized in that: be pre-mixed processing described first wafer layer and two kinds of mixing formula materials of second wafer layer carry out fine grinding through the ultrasonic wave homogenizer after simple the mixing before.
7. a kind of preparation method who prolongs the composite crystal in energy-saving lamp useful life according to claim 5 is characterized in that: described encapsulation also comprises puts into mould with wicking welding back chip, can carry out injection moulding, die casting or moulding by casting.
8. one kind prolongs the energy-saving lamp application of composite crystal on energy-saving lamp in useful life, it is characterized in that: the resonant capacitance two ends that are connected in parallel on energy-saving lamp by each described a kind of composite crystal that prolongs energy-saving lamp useful life in the claim 1~4.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101022102A (en) * | 2007-02-27 | 2007-08-22 | 鹤山丽得电子实业有限公司 | LED lamp capable of emitting white light |
CN101131991A (en) * | 2006-08-23 | 2008-02-27 | 南茂科技股份有限公司 | Thickness reduced multi-chip stacking and packaging construction |
CN101419962A (en) * | 2007-10-24 | 2009-04-29 | 张守仁 | LED, production method therefore and illuminator manufactured by the LED |
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2011
- 2011-04-20 CN CN201110101447A patent/CN102324437A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101131991A (en) * | 2006-08-23 | 2008-02-27 | 南茂科技股份有限公司 | Thickness reduced multi-chip stacking and packaging construction |
CN101022102A (en) * | 2007-02-27 | 2007-08-22 | 鹤山丽得电子实业有限公司 | LED lamp capable of emitting white light |
CN101419962A (en) * | 2007-10-24 | 2009-04-29 | 张守仁 | LED, production method therefore and illuminator manufactured by the LED |
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Application publication date: 20120118 |