CN102322949A - Solid-state all-optical detector with ultrahigh time resolution - Google Patents
Solid-state all-optical detector with ultrahigh time resolution Download PDFInfo
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- CN102322949A CN102322949A CN201110212598A CN201110212598A CN102322949A CN 102322949 A CN102322949 A CN 102322949A CN 201110212598 A CN201110212598 A CN 201110212598A CN 201110212598 A CN201110212598 A CN 201110212598A CN 102322949 A CN102322949 A CN 102322949A
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- solid
- reflectance coating
- time resolution
- detector
- indium phosphide
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000002310 reflectometry Methods 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims description 54
- 238000000576 coating method Methods 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 4
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000004913 activation Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 description 9
- 239000000523 sample Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000009432 framing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000012631 diagnostic technique Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention provides an ultrahigh time resolution solid-state all-optical detector, which mainly solves the problem that picosecond time resolution is difficult to realize in the prior art. The solid-state all-optical detector pack for the ultrahigh time resolution solid-state all-optical detector comprises an indium phosphide substrate, wherein an activation layer is arranged on the front surface of the indium phosphide substrate, a total reflection layer with the reflectivity larger than 90% is arranged on one side, away from the indium phosphide substrate, of the activation layer, and a semi-reflection layer with the reflectivity larger than 45% is arranged on the rear surface of the indium phosphide substrate. The solid-state all-optical detector for the ultrahigh time resolution solid-state all-optical detector has picoseconds (10)-12S) time resolution and 103-105Dynamic range.
Description
Technical field
The invention belongs to ultrafast optical signalling record and processing technology field, be specifically related to a kind of time-resolved solid-state full photo-detector of psec that is used for, can directly apply to the framing imaging system.
Background technology
Along with the original physical schemes of present generation ultrafast phenomena is constantly perfect; Be in the pursuit of detailed information more in the ultrafast process; The various aspects of performance parameter request that ultrafast phenomenon diagnosis goes to also improves constantly accordingly, and what wherein pay close attention to the most is the time resolution and the dynamic range of imaging device.
Traditional oscillograph based on electronic measurement technique, striped and framing imaging technique are difficult to realize the time resolution of picosecond.Because of limited by sampling rate and amplitude jitter, oscillograph and AD converter are difficult to reach the time resolution of picosecond; Receive space charge effects limit, there is bigger limitation in striped image converter tube diagnostic techniques at aspects such as dynamic range, gain homogeneity, time-space resolution abilities, and the deflection of electron beam quickens also to be subject to the interference of high field physical environment; Limited by little transmission speed and transit time disperse with last electric pulse, travelling wave gating framing imaging technique can't obtain the time shutter of picosecond.
Summary of the invention
The present invention provides a kind of superelevation time resolution solid-state full photo-detector, has mainly solved prior art and has been difficult to realize the time-resolved problem of picosecond.
The solid-state full photo-detector of this superelevation time resolution comprises the indium phosphide substrate; The front surface of indium phosphide substrate is provided with active coating; Active coating is provided with reflectivity greater than 90% total reflection layer away from indium phosphide substrate one side, and it is 45%～60% semi-reflective layer that the back surface of indium phosphide substrate is provided with reflectivity.
Above-mentioned active coating is In
1-xGa
xAs
yP
1-yPhosphorus arsenic gallium indium active coating, 0.2≤x≤0.4,0.54≤y≤0.73, the thickness of active coating is 3～8 μ m, is good with 5 μ m; The thickness of indium phosphide substrate is less than 60 μ m, is good with 0.2 μ m.
Above-mentioned total reflection layer comprises that at least three layers of reflectance coating and the number of plies are odd number, and is high and low, high according to refractive index between each layer reflectance coating ... periodic structure arrange; Semi-reflective layer comprises that at least three layers of reflectance coating and the number of plies are odd number, and is high and low, high and low, high and low, high according to refractive index between each layer reflectance coating ... Periodic structure arrange; Totally reflected reflectance coating quantity is more than or equal to the reflectance coating quantity of semi-reflective layer.
The thickness of above-mentioned each reflectance coating is 0.3 μ m～0.4 μ m, is good with 0.3875 μ m, and the high reflectance reflectance coating of total reflection layer, semi-reflective layer is the tantalum pentoxide reflectance coating, antiradar reflectivity reflectance coating silicon dioxide reflectance coating.
The invention has the advantages that:
The solid-state full photo-detector of this superelevation time resolution has psec (10
-12S) time resolution and 10
3-10
5Dynamic range; Different with projectile energy with the signal direct ratio of traditional radiation detector is that the signal direct ratio of this solid-state full photo-detector is relevant with the incident radiation flux, so the size of sensor reduces can not lose detection sensitivity; In addition,, remove traditional C CD space charge from and shift and collect, adopt full optical detection method, avoid the interference of strong-electromagnetic field environment because the right distribution in radiation-induced nonequilibrium electron-hole can be surveyed by real-time and effective.Therefore, this sensor has the time resolution of picosecond.
Description of drawings
Fig. 1 is a concrete structure synoptic diagram of the present invention.
Embodiment
The principle of institute of the present invention foundation is following:
The present invention utilizes In
1-xGa
xAs
yP
1-yThe radiation of active medium absorbing detection signal; Portion causes the changes in distribution of refractive index within it, and the F-P vibration chamber that utilizes total reflection layer and semi-reflective layer to form can make probe light in the chamber, produce and repeatedly come and go through active coating; Make the repeatedly vibration that detection sensitivity improves; Strengthen the absorption of measured signal, cause the significant change of index distribution, modulated by this detector through importing synchronous probe laser surperficial thereafter; Through parsing, can obtain the information of radiant light to probe laser.
It specifically is the front surface that measured signal is incident on the solid-state full photo-detector of superelevation time resolution; Trigger exploring laser light surperficial incident behind the detector simultaneously; The measured signal radiation is incident on the detector; Produced in detector inside transient state, the nonequilibrium electron hole distribution, cause the quick variation of the refractive index of detector semiconductor material; The rate of penetrating that changes distributes external probe light is modulated, and resolves through surveying, and can be finally inversed by the transition physical process of measured signal radiation; Because the radiation-induced CHARGE DISTRIBUTION of measured signal can directly be measured by probe light, has avoided the restriction of conventional charge transference speed, therefore realize very high bandwidth.
Below in conjunction with accompanying drawing specific embodiment of the present invention is detailed:
The solid-state full photo-detector of this superelevation time resolution comprises indium phosphide substrate 1, and the thickness of indium phosphide substrate 1 is less than 60 μ m, is good with 0.2 μ m, and the front surface of indium phosphide substrate 1 is provided with active coating 2, and active coating 2 is In
1-xGa
xAs
yP
1-yPhosphorus arsenic gallium indium active coating 2,0.2≤x≤0.4,0.54≤y≤0.73 wherein, its thickness is 3～8 μ m, is good with 5 μ m; Active coating 2 is provided with reflectivity greater than 90% total reflection layer 3 away from indium phosphide substrate 1 one sides; Reflectivity is with greater than 97% being good, and total reflection layer 3 comprises that at least three layers of reflectance coating and the number of plies are odd number, is good with 7 layers; High and low, high between each layer reflectance coating according to refractive index ... periodic structure arrange; Utilize magnetron sputtering method to make, the high reflectance reflectance coating is a tantalum pentoxide reflectance coating 31 in the total reflection layer 3, antiradar reflectivity reflectance coating silicon dioxide reflectance coating 32; It is 45%～60% semi-reflective layer 4 that the back surface of indium phosphide substrate 1 is provided with reflectivity; Reflectivity is good with 60%, and semi-reflective layer 4 comprises that at least three layers of reflectance coating and the number of plies are odd number, is good with 3 layers; High and low, high between each layer reflectance coating according to refractive index ... Periodic structure arrange; Utilize magnetron sputtering method to make, the high reflectance reflectance coating is a tantalum pentoxide reflectance coating 31 in the semi-reflective layer, antiradar reflectivity reflectance coating silicon dioxide reflectance coating 32; The thickness of each reflectance coating is 0.3 μ m～0.4 μ m, is good with 0.3875 μ m.Totally reflected reflectance coating quantity is more than or equal to the reflectance coating quantity of semi-reflective layer, with greater than being good.
It is 100mJ that exploring laser light adopts energy, and wavelength is the probe laser of 1550nm, and pulse width is the pulsed laser of 100fs.
The solid-state full photo-detector of this superelevation time resolution absorbs the radiation of measured signal, in inner of short duration, the right distribution in nonequilibrium electron hole, the refractive index that these newborn electron-hole pair modulation detectors are inner of producing of detector.The variation of detector inner refractive index is carried out phase modulation (PM) to probe light again, can obtain the transient changing process of measured signal through the parsing to the probe light phase modulation; Because the right distribution in radiation-induced nonequilibrium electron-hole can be measured by real-time and effective, remove traditional C CD from and survey required charge separation, collection, transfer; Therefore, the corresponding time of the solid-state full photo-detector of this superelevation time resolution can be designed the time response of picosecond (10-12s).
Claims (7)
1. solid-state full photo-detector of superelevation time resolution; Comprise the indium phosphide substrate; It is characterized in that: the front surface of said indium phosphide substrate is provided with active coating; Active coating is provided with reflectivity greater than 90% total reflection layer away from indium phosphide substrate one side, and it is 45%～60% semi-reflective layer that the back surface of indium phosphide substrate is provided with reflectivity.
2. the solid-state full photo-detector of superelevation time resolution according to claim 1, it is characterized in that: described active coating is In
1-xGa
xAs
yP
1-yPhosphorus arsenic gallium indium active coating, the thickness of active coating are 3～8 μ m, wherein 0.2≤x≤0.4,0.54≤y≤0.73; The thickness of indium phosphide substrate is less than 60 μ m.
3. the solid-state full photo-detector of superelevation time resolution according to claim 1 and 2; It is characterized in that: described total reflection layer comprises that at least three layers of reflectance coating and the number of plies are odd number, and is high and low, high according to refractive index between each layer reflectance coating ... Periodic structure arrange; Semi-reflective layer comprises that at least three layers of reflectance coating and the number of plies are odd number, and is high and low, high according to refractive index between each layer reflectance coating ... Periodic structure arrange; Totally reflected reflectance coating quantity is greater than the reflectance coating quantity of semi-reflective layer.
4. the solid-state full photo-detector of superelevation time resolution according to claim 3 is characterized in that: the thickness of said each reflectance coating is 0.3 μ m～0.4 μ m.
5. the solid-state full photo-detector of superelevation time resolution according to claim 4 is characterized in that: the high reflectance reflectance coating of said total reflection layer, semi-reflective layer is the tantalum pentoxide reflectance coating, antiradar reflectivity reflectance coating silicon dioxide reflectance coating.
6. the solid-state full photo-detector of superelevation time resolution according to claim 5 is characterized in that: the thickness of said active coating is 5 μ m, and the thickness of indium phosphide substrate is 0.2 μ m, and the thickness of reflectance coating is 0.3875 μ m.
7. the solid-state full photo-detector of superelevation time resolution according to claim 6 is characterized in that: the said totally reflected number of plies is 7, and reflectivity is 97%; The number of plies of semi-reflective layer is 3, and reflectivity is 60%.
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| CN201110212598A CN102322949A (en) | 2011-07-28 | 2011-07-28 | Solid-state all-optical detector with ultrahigh time resolution |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106546617A (en) * | 2015-09-17 | 2017-03-29 | 中国科学院西安光学精密机械研究所 | Ultrahigh time resolution optical detection device |
| CN106935681A (en) * | 2017-01-23 | 2017-07-07 | 中国科学院西安光学精密机械研究所 | Preparation method of all-optical solid-state ultrafast photodetector |
| CN108254349A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | Image enhanced all-optical solid ultrafast imaging detector |
| CN108954053A (en) * | 2017-05-22 | 2018-12-07 | 南昌欧菲显示科技有限公司 | Backlight module, display device and terminal |
| CN110398293A (en) * | 2019-07-03 | 2019-11-01 | 中国科学院西安光学精密机械研究所 | The ultrafast detection chip of light solid, the ultrafast detector of full light solid and its detection method entirely |
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| CN202329807U (en) * | 2011-07-28 | 2012-07-11 | 中国科学院西安光学精密机械研究所 | Solid-state all-optical detector with ultrahigh time resolution |
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Patent Citations (6)
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| CN1965452A (en) * | 2004-06-18 | 2007-05-16 | 3M创新有限公司 | II-VI/III-V layered construction on InP substrate |
| CN101053129A (en) * | 2004-09-16 | 2007-10-10 | 康宁股份有限公司 | Method of fabricating an InP-based VCSEL and device fabricated by the method |
| CN101356702A (en) * | 2006-08-23 | 2009-01-28 | 株式会社理光 | Surface-emitting laser array, optical scanning device, and image forming device |
| CN101814696A (en) * | 2009-02-24 | 2010-08-25 | 三菱电机株式会社 | Semiconductor laser |
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| CN202329807U (en) * | 2011-07-28 | 2012-07-11 | 中国科学院西安光学精密机械研究所 | Solid-state all-optical detector with ultrahigh time resolution |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106546617A (en) * | 2015-09-17 | 2017-03-29 | 中国科学院西安光学精密机械研究所 | Ultrahigh time resolution optical detection device |
| CN106935681A (en) * | 2017-01-23 | 2017-07-07 | 中国科学院西安光学精密机械研究所 | Preparation method of all-optical solid-state ultrafast photodetector |
| CN108954053A (en) * | 2017-05-22 | 2018-12-07 | 南昌欧菲显示科技有限公司 | Backlight module, display device and terminal |
| CN108254349A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | Image enhanced all-optical solid ultrafast imaging detector |
| CN108254349B (en) * | 2018-02-02 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Image enhancement type all-optical solid ultrafast imaging detector |
| CN110398293A (en) * | 2019-07-03 | 2019-11-01 | 中国科学院西安光学精密机械研究所 | The ultrafast detection chip of light solid, the ultrafast detector of full light solid and its detection method entirely |
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Application publication date: 20120118 |