CN102322949A - An ultrahigh time-resolved solid-state plenoptic detector - Google Patents
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000002310 reflectometry Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 18
- 238000000576 coating method Methods 0.000 claims 18
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 9
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- 239000000523 sample Substances 0.000 description 8
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
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Abstract
本发明提供一种超高时间分辨固态全光探测器，主要解决了现有技术难于实现皮秒级时间分辨的问题。该超高时间分辨固态全光探测器用固态全光探测器包包括磷化铟衬底，磷化铟衬底的前表面设置有激活层，激活层远离磷化铟衬底一侧设置有反射率大于90％的全反射层，磷化铟衬底的后表面设置有反射率大于45％的半反射层。该超高时间分辨固态全光探测器用固态全光探测器具有皮秒(10-12S)时间分辨和103-105动态范围。
The invention provides an ultra-high time-resolution solid-state all-optical detector, which mainly solves the problem that it is difficult to realize picosecond-level time resolution in the prior art. The solid-state plenoptic detector package for ultra-high time-resolution solid-state plenoptic detectors includes an indium phosphide substrate, an active layer is provided on the front surface of the indium phosphide substrate, and a reflectivity is provided on the side of the active layer away from the indium phosphide substrate. The total reflection layer is greater than 90%, and the rear surface of the indium phosphide substrate is provided with a semi-reflection layer with a reflectivity greater than 45%. The solid-state plenoptic detector for the ultra-high time-resolution solid-state plenoptic detector has picosecond (10 -12 S) time resolution and a dynamic range of 10 3 -10 5 .
Description
技术领域 technical field
本发明属于超快光学信号记录及处理技术领域，具体涉及一种用于皮秒时间分辨的固态全光探测器，可直接应用于分幅成像系统。The invention belongs to the technical field of ultrafast optical signal recording and processing, and in particular relates to a solid-state plenoptic detector for picosecond time resolution, which can be directly applied to a framing imaging system.
背景技术 Background technique
随着目前产生超快现象的原始物理方案不断完善，处于对超快过程中更加细节信息的追求，超快现象诊断转至的各方面性能参数要求也相应的不断提高，其中最为关注的是成像装置的时间分辨和动态范围。With the continuous improvement of the original physical scheme for ultrafast phenomena and the pursuit of more detailed information in the ultrafast process, the requirements for performance parameters in various aspects of ultrafast phenomenon diagnosis have also been continuously improved, and the most concerned is imaging. Time resolution and dynamic range of the device.
传统的基于电子测量技术的示波器、条纹和分幅成像技术很难实现皮秒级的时间分辨。因受采样率和幅度抖动限制，示波器和AD转换器难以达到皮秒级的时间分辨；受空间电荷效应限制，条纹变像管诊断技术在动态范围、增益均匀性、时空分辨能力等方面存在较大的局限性，电子束的偏转加速也易受强场物理环境的干扰；受微带上电脉冲的传输速度和渡越时间弥散限制，行波选通分幅成像技术无法获得皮秒级的曝光时间。Traditional oscilloscope, fringe, and framing imaging techniques based on electronic measurement techniques are difficult to achieve picosecond-level time resolution. Due to the limitation of sampling rate and amplitude jitter, it is difficult for oscilloscopes and AD converters to achieve picosecond-level time resolution; limited by space charge effects, the diagnostic technology of fringe imaging tubes has problems in terms of dynamic range, gain uniformity, and temporal and spatial resolution. The deflection acceleration of the electron beam is also susceptible to the interference of the strong field physical environment; limited by the transmission speed and transit time dispersion of the electrical pulse on the microstrip, the traveling wave gated framing imaging technology cannot obtain picosecond-level exposure time.
发明内容 Contents of the invention
本发明提供一种超高时间分辨固态全光探测器，主要解决了现有技术难于实现皮秒级时间分辨的问题。The invention provides an ultra-high time-resolution solid-state all-optical detector, which mainly solves the problem that it is difficult to realize picosecond-level time resolution in the prior art.
该超高时间分辨固态全光探测器包括磷化铟衬底，磷化铟衬底的前表面设置有激活层，激活层远离磷化铟衬底一侧设置有反射率大于90％的全反射层，磷化铟衬底的后表面设置有反射率为45％～60％的半反射层。The ultra-high time-resolution solid-state all-optical detector includes an indium phosphide substrate, an active layer is arranged on the front surface of the indium phosphide substrate, and a total reflection with a reflectivity greater than 90% is arranged on the side of the active layer away from the indium phosphide substrate. layer, the rear surface of the indium phosphide substrate is provided with a semi-reflective layer with a reflectivity of 45% to 60%.
上述的激活层是In1-xGaxAsyP1-y磷砷镓铟激活层，0.2≤x≤0.4，0.54≤y≤0.73，激活层的厚度为3～8μm，以5μm为佳；磷化铟衬底的厚度为小于60μm，以0.2μm为佳。The above-mentioned active layer is an In 1-x Ga x As y P 1-y indium gallium arsenic phosphorous active layer, 0.2≤x≤0.4, 0.54≤y≤0.73, and the thickness of the active layer is 3-8 μm, preferably 5 μm; The thickness of the indium phosphide substrate is less than 60 μm, preferably 0.2 μm.
上述的全反射层包括至少三层反射膜且层数为奇数，各层反射膜之间按照折射率高、低、高...的周期性结构排列；半反射层包括至少三层反射膜且层数为奇数，各层反射膜之间按照折射率高、低、高、低、高、低、高…的周期性结构排列；全反射层的反射膜数量大于或等于半反射层的反射膜数量。The above-mentioned total reflection layer includes at least three layers of reflection films and the number of layers is odd, and the layers of reflection films are arranged according to the periodic structure of high, low, high refractive index...; the semi-reflection layer includes at least three layers of reflection films and The number of layers is odd, and the reflective films of each layer are arranged according to the periodic structure of high refractive index, low, high, low, high, low, high...; the number of reflective films in the total reflection layer is greater than or equal to that of the semi-reflective layer quantity.
上述各反射膜的厚度为0.3μm～0.4μm，以0.3875μm为佳，全反射层、半反射层的高反射率反射膜为五氧化二钽反射膜，低反射率反射膜二氧化硅反射膜。The thickness of the above-mentioned reflective films is 0.3 μm to 0.4 μm, preferably 0.3875 μm. The high reflective reflective film of the total reflective layer and the semi-reflective layer is tantalum pentoxide reflective film, and the low reflective reflective film is silicon dioxide reflective film. .
本发明的优点在于：The advantages of the present invention are:
该超高时间分辨固态全光探测器具有皮秒(10-12S)时间分辨和103-105动态范围；与传统的辐射探测器的信号正比与入射能量不同的是，该固态全光探测器的信号正比与入射辐射通量有关，因此传感器的尺寸减小不会损失探测灵敏度；此外，由于辐射引起的非平衡电子-空穴对的分布可被实时有效的探测，免去传统CCD空间电荷转移与收集，采用全光学探测方法，避免强电磁场环境的干扰。因此，该传感器具有皮秒级的时间分辨。The ultra-high time-resolution solid-state plenoptic detector has picosecond (10 -12 S) time resolution and a dynamic range of 10 3 -10 5 ; unlike traditional radiation detectors whose signal is proportional to incident energy, this solid-state plenoptic The signal of the detector is proportional to the incident radiation flux, so the size reduction of the sensor will not lose the detection sensitivity; in addition, the distribution of unbalanced electron-hole pairs caused by radiation can be detected effectively in real time, eliminating the need for traditional CCD Space charge transfer and collection adopts all-optical detection method to avoid interference from strong electromagnetic field environment. Therefore, the sensor has picosecond time resolution.
附图说明 Description of drawings
图1为本发明具体结构示意图。Fig. 1 is a schematic diagram of the specific structure of the present invention.
具体实施方式 Detailed ways
本发明所依据的原理如下：The principle on which the present invention is based is as follows:
本发明利用In1-xGaxAsyP1-y激活介质吸收探测信号的辐射，在其内部引起折射率的分布变化，利用全反射层和半反射层形成的F-P振荡腔，可使探针光在腔内产生多次往返经过激活层，使得探测灵敏度提高的多次振荡，增强待测信号的吸收，引起折射率分布的明显变化，在其后表面通过输入同步的探针激光被该探测器进行调制，通过对探针激光的解析，即可获得辐射光的信息。The invention utilizes the In 1-x Ga x As y P 1-y active medium to absorb the radiation of the detection signal, causing the distribution change of the refractive index inside it, and the FP oscillation cavity formed by the total reflection layer and the semi-reflection layer can make the detection The needle light generates multiple round-trips through the active layer in the cavity, which makes multiple oscillations that improve the detection sensitivity, enhances the absorption of the signal to be measured, and causes a significant change in the refractive index distribution. On the rear surface, the synchronized probe laser is input by the The detector is modulated, and the information of the radiated light can be obtained by analyzing the probe laser.
其具体是待测信号入射在超高时间分辨固态全光探测器的前表面，同时触发探测激光从探测器后表面入射，待测信号辐射入射在探测器上，在探测器内部产生了瞬态的、非平衡电子空穴分布，引起探测器半导体材料的折射率的快速变化；变化的射率分布对外来探针光进行调制，通过探测解析，可反演出待测信号辐射的瞬变物理过程；由于待测信号辐射诱导的电荷分布可被探针光直接测量，避免了传统电荷传输转移速度的限制，因此实现很高的带宽。Specifically, the signal to be measured is incident on the front surface of the ultra-high time-resolved solid-state all-optical detector, and at the same time, the detection laser is triggered to incident from the back surface of the detector. The signal radiation to be measured is incident on the detector, and a transient state is generated inside the detector. The non-equilibrium electron-hole distribution causes rapid changes in the refractive index of the detector semiconductor material; the changing refractive index distribution modulates the external probe light, and through detection and analysis, the transient physical process of the signal radiation to be measured can be reversed ; Since the charge distribution induced by the radiation of the signal to be measured can be directly measured by the probe light, the limitation of the traditional charge transfer transfer speed is avoided, so a very high bandwidth is achieved.
以下结合附图对本发明的具体实施例进行详述：Specific embodiments of the present invention are described in detail below in conjunction with accompanying drawings:
该超高时间分辨固态全光探测器包括磷化铟衬底1，磷化铟衬底1的厚度为小于60μm，以0.2μm为佳，磷化铟衬底1的前表面设置有激活层2，激活层2是In1-xGaxAsyP1-y磷砷镓铟激活层2，其中0.2≤x≤0.4，0.54≤y≤0.73，其厚度为3～8μm，以5μm为佳；激活层2远离磷化铟衬底1一侧设置有反射率大于90％的全反射层3，反射率以大于97％为佳，全反射层3包括至少三层反射膜且层数为奇数，以7层为佳，各层反射膜之间按照折射率高、低、高...的周期性结构排列，利用磁控溅射法制作，全反射层3中高反射率反射膜为五氧化二钽反射膜31，低反射率反射膜二氧化硅反射膜32；磷化铟衬底1的后表面设置有反射率为45％～60％的半反射层4，反射率以60％为佳，半反射层4包括至少三层反射膜且层数为奇数，以3层为佳，各层反射膜之间按照折射率高、低、高…的周期性结构排列，利用磁控溅射法制作，半反射层中高反射率反射膜为五氧化二钽反射膜31，低反射率反射膜二氧化硅反射膜32，各反射膜的厚度为0.3μm～0.4μm，以0.3875μm为佳。全反射层的反射膜数量大于或等于半反射层的反射膜数量，以大于为佳。The ultra-high time-resolution solid-state all-optical detector includes an indium phosphide substrate 1, the thickness of the indium phosphide substrate 1 is less than 60 μm, preferably 0.2 μm, and the front surface of the indium phosphide substrate 1 is provided with an
探测激光采用能量为100mJ，波长为1550nm的探针激光，脉冲宽度为100fs的脉冲激光器。The probe laser is a probe laser with an energy of 100mJ and a wavelength of 1550nm, and a pulsed laser with a pulse width of 100fs.
该超高时间分辨固态全光探测器吸收待测信号的辐射，在探测器内部产生短暂的、非平衡电子空穴对的分布，这些新生的电子-空穴对调制探测器内部的折射率。探测器内部折射率的变化又对探针光进行相位调制，通过对探针光相位调制的解析可获得待测信号的瞬态变化过程；由于辐射引起的非平衡电子-空穴对的分布可被实时有效的测量，免去传统CCD探测所需的电荷分离、收集、转移；因此，该超高时间分辨固态全光探测器的相应时间可以设计皮秒级(10-12s)的时间响应。The ultra-high time-resolved solid-state all-optical detector absorbs the radiation of the signal to be measured, and generates a short-lived, non-equilibrium electron-hole pair distribution inside the detector, and these newly born electron-hole pairs modulate the refractive index inside the detector. The change of the internal refractive index of the detector modulates the phase of the probe light, and the transient change process of the signal to be measured can be obtained by analyzing the phase modulation of the probe light; the distribution of the non-equilibrium electron-hole pairs caused by radiation can be It is effectively measured in real time, eliminating the need for charge separation, collection, and transfer required by traditional CCD detection; therefore, the response time of the ultra-high time-resolution solid-state plenoptic detector can be designed with a picosecond (10-12s) time response.
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| CN106546617A (en) * | 2015-09-17 | 2017-03-29 | 中国科学院西安光学精密机械研究所 | Ultrahigh time resolution optical detection device |
| CN106935681A (en) * | 2017-01-23 | 2017-07-07 | 中国科学院西安光学精密机械研究所 | Preparation method of all-optical solid-state ultrafast photodetector |
| CN108954053A (en) * | 2017-05-22 | 2018-12-07 | 南昌欧菲显示科技有限公司 | Backlight module, display device and terminal |
| CN108254349A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | Image enhanced all-optical solid ultrafast imaging detector |
| CN108254349B (en) * | 2018-02-02 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Image enhancement type all-optical solid ultrafast imaging detector |
| CN110398293A (en) * | 2019-07-03 | 2019-11-01 | 中国科学院西安光学精密机械研究所 | All-optical solid-state ultrafast detection chip, all-optical solid-state ultrafast detector and detection method thereof |
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