CN110398293A - The ultrafast detection chip of light solid, the ultrafast detector of full light solid and its detection method entirely - Google Patents
The ultrafast detection chip of light solid, the ultrafast detector of full light solid and its detection method entirely Download PDFInfo
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- CN110398293A CN110398293A CN201910594755.1A CN201910594755A CN110398293A CN 110398293 A CN110398293 A CN 110398293A CN 201910594755 A CN201910594755 A CN 201910594755A CN 110398293 A CN110398293 A CN 110398293A
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J11/00—Measuring the characteristics of individual optical pulses or of optical pulse trains
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Abstract
The present invention provides a kind of ultrafast detection chip of full light solid, the ultrafast detector of full light solid and its detection methods, solve the problem that existing ultrafast diagnostic device can not be provided simultaneously with high time resolution, high spatial resolution performance and the ultrafast diagnostic device diagnosis effect difference of existing electron-optical electrovacuum.Wherein chip includes the modulated grating set gradually along incoming signal optical transmission direction, optical film, semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure, the first anti-reflection film, substrate and the second anti-reflection film, signal light incidence modulated grating, probe light the second anti-reflection film of incidence；The optical film is anti-reflection to signal light progress, it is anti-increase to probe light；The semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure is used for detectable signal light, and modulated Grating Modulation, and spatial distribution pattern corresponding with signal light is formed inside semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure；First anti-reflection film and the second anti-reflection film carry out probe light anti-reflection.
Description
Technical field
The invention belongs to ultrafast diagnostic techniques, and in particular to a kind of complete ultrafast spy of light solid applied to ultrafast signal detection
Survey chip, the ultrafast detector of full light solid and its detection method.
Background technique
Ultrafast diagnostic techniques is the indispensable research tool and means of front line science and hard-core technology field.Conventional ultrafast
Diagnostic device includes streak camera, image converter tube framing camera, the framing camera based on time gated type ICCD technology.
For streak camera, the temporal resolution of subpicosecond can be reached, but its high time resolution is to sacrifice sky
Between obtain based on information, and can only differentiate one-dimensional space variation, ultrafast two-dimensional image information can not be obtained.
For image converter tube framing camera, two-dimensional space resolution ratio can reach 20lp/mm, but because by cathode material,
The limitation of microchannel plate aperture and electron transit time disperse etc., temporal resolution is only capable of reaching 40ps, and is only limitted to X-ray
The measurement of wave band limits the application of the technology.
And the framing camera based on time gated type ICCD technology, though can respond it is ultraviolet near infrared signal, its
Time resolution most fastly can only be to 2~3ns.
In short, conventional ultrafast diagnostic device is because that can not be provided simultaneously with high time resolution, high spatial resolution performance, it is difficult to
Meets the needs of basic research and major scientific projects.
In addition, the ultrafast diagnostic device of conditional electronic optics electrovacuum, needs to work under vacuum conditions, there are space charges
The problem of effect, micro channel plate gain saturation effect, disperse of microchannel plate transition time.
Summary of the invention
In order to solve, existing ultrafast diagnostic device can not be provided simultaneously with high time resolution, high spatial resolution performance is asked
Topic, the present invention provides a kind of ultrafast detection chip of full light solid, the ultrafast detector of full light solid and its detection methods, break through and pass
The bottleneck for ultrafast diagnostic techniques of uniting realizes the ultrafast two-dimensional detection of full light to signal light.
To achieve the above object, present invention provide the technical scheme that
A kind of complete ultrafast detection chip of light solid, be characterized in that including along incoming signal optical transmission direction successively
The modulated grating of setting, optical film, semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure, the first anti-reflection film,
Substrate and the second anti-reflection film, signal light incidence modulated grating, probe light the second anti-reflection film of incidence；The optical film is to signal light
Carry out it is anti-reflection, probe light increase it is anti-；The semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure is for visiting
Signal light, and modulated Grating Modulation are surveyed, is formed inside semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure
Spatial distribution pattern corresponding with signal light；First anti-reflection film and the second anti-reflection film carry out probe light anti-reflection.
Further, the semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure is GaAs and AlGaAs
Two kinds of semiconductor material alternating growths are made, and the response layer of the multi-quantum pit structure is with a thickness of 3~6 μm.
Further, the material of the modulated grating is Al or Au, and the spatial resolution of modulated grating is 50~100lp/
mm。
Further, the signal light is visible light, and optical film uses high-index material TiO2With low-refraction material
Expect SiO2Membrane system made of alternating growth, reaches 99% to signal light transmission, reaches 99% to probe light reflectivity.
Further, the signal light is X-ray, and optical film is made of metal material, the thickness of the modulated grating
Degree is greater than or equal to 5 μm.
Further, the metal material is Al or Cu or Au.
Further, first anti-reflection film and the second anti-reflection film use high-index material TiO2And low-index material
SiO2Alternating growth membrane system；The substrate is quartz plate.
Further, the semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure and the first anti-reflection film are logical
Bonded adhesives is crossed to fix.
The present invention provides a kind of complete ultrafast detector of light solid, it is characterized in that and exists including shell and setting
In shell such as a kind of above-mentioned complete ultrafast detection chip of light solid；One end of the shell is arranged input window, shell it is another
End setting output window；The modulated grating is located at close to one end of input window, and second anti-reflection film is located at close to output
One end of window.
Meanwhile the complete ultrafast detection of light solid is carried out using the above-mentioned complete ultrafast detector of light solid the present invention also provides a kind of
Method is characterized in that, comprising the following steps:
1) input window of signal light incidence shell；
2) signal light reaches semiconductor super fast response material GaAs/AlGaAs multiple quantum wells knot after optical film transmits
Structure；
3) semiconductor inside signal light induced semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure is ultrafast
Responsive materials refractive index changes, the modulation through semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure surface
Grating is modulated, and forms instantaneous refractive index spatial distribution map corresponding with signal light in semiconductor super fast response material internal
Sample, and semiconductor super fast response material is written into the phase information of signal light, the phase information includes time, space, intensity
Information；
4) output window of probe light from shell is incident, successively transmits, arrives through the second anti-reflection film, substrate, the first anti-reflection film
Up to semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure, the instantaneous refractive index spatial formed in step 3) is distributed
Pattern is modulated the phase information of probe light, the phase information of the phase information mapping signal light of probe light after modulation；
5) probe light for obtaining the phase information of mapping signal light, completes the ultrafast two-dimensional detection to signal light.
Compared with prior art, the invention has the advantages that
1, the complete ultrafast detection chip of light solid of the present invention passes through full light using semiconductor material as super fast response material
Mode realizes detection, has superelevation time-space resolution ability and big dynamic range；Without working under vacuum conditions, be conducive to set
Standby miniaturization, space charge effect, the micro channel plate gain for also overcoming the ultrafast diagnostic device of conditional electronic optics electrovacuum are full
The problem of with effect, the disperse of microchannel plate transition time；
Using GaAs/AlGaAs multi-quantum pit structure material in response, the chip response time is short, fast response time.
2, for the complete ultrafast detection chip of light solid of the present invention without using in vacuum environment, anti-electromagnetic interference capability is strong, visits
It is high to survey accuracy.
3, the complete ultrafast detection method of light solid of the present invention detects corresponding measured signal using the ultrafast detection chip of full light solid,
Realize the conversion of light-light, semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure is non-flat since illumination effect generates
Weigh carrier, modulates through chip surface modulated grating, inside semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure
Instantaneous refractive index spatial distribution pattern corresponding with incident light is formed, probe light incidence semiconductor super fast response material is then used
Expect GaAs/AlGaAs multi-quantum pit structure, obtain the probe light of the phase information of mapping signal light, completes to the ultrafast of signal light
Two-dimensional detection, the feature with superelevation time and spatial resolution, and can realize from the detection of visible light-X-ray.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the ultrafast detection chip of full light solid of the invention；
Fig. 2 is the structural schematic diagram of the ultrafast detector of full light solid of the invention；
Fig. 3 is the flow chart of the ultrafast detection method of full light solid of the invention；
Wherein, appended drawing reference is as follows:
1- modulated grating, 2- optical film, 3- semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure, 4-
Bonded adhesives, the first anti-reflection film of 5-, 6- substrate, the second anti-reflection film of 7-, 8- signal light, 9- probe light, 10- shell, 11- input window
Mouthful, 12- output window.
Specific embodiment
The contents of the present invention are described in further detail below in conjunction with the drawings and specific embodiments.
As shown in Figure 1, a kind of complete ultrafast detection chip of light solid, including set gradually along 8 transmission direction of incoming signal light
Modulated grating 1, optical film 2, semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure 3, the first anti-reflection film 5,
Substrate 6 and the second anti-reflection film 7, incident second anti-reflection film 7 of probe light 9.For different incoming signal light 8, modulated grating 1 be can be selected
Different materials, when signal light 8 is visible light, the metal materials such as Al, Au, the sky of modulated grating is can be selected in 1 material of modulated grating
Between resolution ratio select 50~100lp/mm；When signal light 8 is X-ray, the atomic numbers such as 1 material selection Au of modulated grating are high
Metal material, the spatial resolution of modulated grating select 50~100lp/mm, and the thickness of modulated grating is more than or equal to 5um.
The optical film 2 be for 8 wave band of incoming signal light and the design growth of probe light 9 to probe light increase it is anti-, enter
Light anti-reflection film system is penetrated, when signal light 8 is visible light, high-index material TiO can be used2With low-index material SiO2Alternately
Membrane system made of growing, makes 8 transmitance of signal light reach 99%, probe light reflectivity reaches 99%；When signal light 8 is X-ray
When, metal film realization can be used, select membrane system made of the metal materials such as Al, Cu, Au, reach anti-reflection to signal light, probe light
Increase anti-effect.
The semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure 3 is used for detectable signal light 8, and through adjusting
Grating 1 processed is modulated, and is formed inside semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure 3 opposite with signal light 8
The spatial distribution pattern answered；
GaAs/AlGaAs multi-quantum pit structure is the structure of two kinds of semiconductor material alternating growths of GaAs and AlGaAs, tool
The thickness of every layer of body can be rationally designed according to actual needs, ultimately form multi-quantum pit structure；Using low temperature MOCVD
(metallo-organic compound chemical gaseous phase deposition) is grown on GaAs (GaAs) substrate, 3-6 μm of response layer thickness；The present embodiment institute
The growth temperature of use is 450 DEG C, and using GaAs/AlGaAs multi-quantum pit structure, material, chip response time contract in response
It is short to 2.5ps, chip response is fast.
First anti-reflection film 5 and the second anti-reflection film 7 on 6 two sides of substrate are to carry out antireflective optical film to probe light, can be adopted
With high-index material TiO2With low-index material SiO2Alternating growth membrane system makes probe light transmission rate to 99%；Optical film
2, the first anti-reflection film 5 and the second anti-reflection film 7 use identical material, can design each layer high-index material according to actual needs
TiO2With low-index material SiO2Thickness and alternate frequency, required for realizing to probe light, signal light anti-reflection or
Increase reaction.
Substrate 6 is and the matched hard bearing material of 8 light of incoming signal, preferably it is high to incoming signal light thoroughly, this implementation
Quartz plate can be used in example.
It is fixed by bonded adhesives 4 between semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure 3 and substrate 6,
Uv-curable glue can be used in the present embodiment to solidify under vacuum conditions.
Based on the above-mentioned complete ultrafast detection chip of light solid, a kind of complete ultrafast detector of light solid is present embodiments provided, such as
Above-mentioned a kind of complete ultrafast detection chip of light solid shown in Fig. 2, including shell and setting inside the shell；The one of the shell 10
Output window 12 is arranged in end setting input window 11, the other end of shell 10；The modulated grating 1 is located at close to input window 11
One end, second anti-reflection film 7 be located at close to output window 12 one end.
As shown in figure 3, the ultrafast detector working principle of the full light solid of the present embodiment: using the complete ultrafast detection chip of light solid
Incident optical signal is detected, realizes the conversion of light-light, when the input window 11 of the incident shell 10 of signal light 8, signal light 8 is through optics
After membrane system 2 transmits, when reaching on semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure 3, semiconductor super fast response
Material internal is because semiconductor is shunk, band system fills and the effects such as Carriers Absorption generate nonequilibrium carrier, induced material refraction
Rate changes, and modulated grating 1 is modulated, and semiconductor super fast response material internal forms instantaneous refraction corresponding with incident light
Rate spatial distribution pattern will carry time-space-strength information " write-in " semiconductor super fast response material of 8 information of signal light
In；Then the output window 12 using probe light 9 from shell 10 is incident, successively through the second anti-reflection film 7, substrate 6, the first anti-reflection film
5 reach semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure 3, corresponding instantaneous refractive index spatial distribution pattern
The phase of probe light is modulated, time-space-strength information of phase information mapping signal light 8, obtains and carry signal
The probe light of optical phase information completes the ultrafast two-dimensional detection to signal light 8.
The above is only the preferred embodiment of the present invention is described, technical solution of the present invention is not limited to
This, those skilled in the art's made any known deformation on the basis of major technique of the present invention is conceived belongs to institute of the present invention
Technology scope to be protected.
Claims (10)
1. a kind of complete ultrafast detection chip of light solid, it is characterised in that: including being set gradually along incoming signal light (8) transmission direction
Modulated grating (1), optical film (2), semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure (3), first increase
Permeable membrane (5), substrate (6) and the second anti-reflection film (7)；Signal light (8) incidence modulated grating (1), probe light (9) incidence second is anti-reflection
Film (7),
The optical film (2) is anti-reflection to signal light (8) progress, it is anti-increase to probe light (9)；
The semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure (3) is used for detectable signal light, and modulated light
Grid (1) modulation, forms and signal light (8) phase inside semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure (3)
Corresponding spatial distribution pattern；
First anti-reflection film (5) and the second anti-reflection film (7) carry out probe light anti-reflection.
2. a kind of complete ultrafast detection chip of light solid according to claim 1, it is characterised in that: the ultrafast sound of semiconductor
Material GaAs/AlGaAs multi-quantum pit structure (3) is answered to be made of GaAs and AlGaAs semiconductor material alternating growth；
The response layer of the semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure (3) is with a thickness of 3~6 μm.
3. a kind of complete ultrafast detection chip of light solid according to claim 1, it is characterised in that: the modulated grating (1)
Material be Al or Au, the spatial resolution of modulated grating (1) is 50~100lp/mm.
4. a kind of complete ultrafast detection chip of light solid according to claim 1, it is characterised in that: the signal light (8) is
Visible light, optical film (2) use high-index material TiO2With low-index material SiO2Membrane system made of alternating growth is right
Signal light (8) transmissivity reaches 99%, reaches 99% to probe light reflectivity.
5. a kind of complete ultrafast detection chip of light solid according to claim 1, it is characterised in that: the signal light (8) is X
Ray, optical film (2) are made of metal material, and the thickness of the modulated grating (1) is greater than or equal to 5 μm.
6. a kind of complete ultrafast detection chip of light solid according to claim 5, it is characterised in that: the metal material is Al
Or Cu or Au.
7. a kind of complete ultrafast detection chip of light solid according to claim 1, it is characterised in that: first anti-reflection film
(5) and the second anti-reflection film (7) uses high-index material TiO2With low-index material SiO2Membrane system made of alternating growth；
The substrate (6) is quartz plate.
8. a kind of complete ultrafast detection chip of light solid according to any one of claims 1 to 7, it is characterised in that: described partly to lead
Body super fast response material GaAs/AlGaAs multi-quantum pit structure (3) and the first anti-reflection film (5) are fixed by bonded adhesives (4).
9. a kind of complete ultrafast detector of light solid, it is characterised in that: including shell (10) and be arranged in shell (10) as
A kind of any complete ultrafast detection chip of light solid of claim 1 to 8；
Input window (11) are arranged in one end of the shell (10), and output window (12) are arranged in the other end of shell (10)；
The modulated grating (1) is located at close to the one end of input window (11), and second anti-reflection film (7) is located at close to output window
One end of mouth (12).
10. carrying out the complete ultrafast detection method of light solid, feature using a kind of complete ultrafast detector of light solid described in claim 9
It is, comprising the following steps:
1) input window (11) of the incident shell (10) of signal light (8)；
2) signal light (8) reaches semiconductor super fast response material GaAs/AlGaAs multiple quantum wells after optical film (2) transmission
Structure (3)；
3) the internal semiconductor of signal light (8) induced semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure (3) is super
Fast-response Refractive Index of Material changes, and modulated grating (1) is modulated, semiconductor super fast response material internal formed with
The corresponding instantaneous refractive index spatial distribution pattern of signal light (8), and the phase information of signal light (8) write-in semiconductor is ultrafast
Responsive materials, the phase information include time, space, strength information；
4) output window (12) of probe light (9) from shell (10) is incident, successively through the second anti-reflection film (7), substrate (6), first
Anti-reflection film (5) transmission, reaches semiconductor super fast response material GaAs/AlGaAs multi-quantum pit structure (3), is formed in step 3)
Instantaneous refractive index spatial distribution pattern is modulated the phase information of probe light, and the phase information of probe light maps letter after modulation
The phase information of number light (8)；
5) probe light for obtaining mapping signal light (8) phase information, completes the ultrafast two-dimensional detection to signal light (8).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN114414041A (en) * | 2021-12-27 | 2022-04-29 | 中国科学院西安光学精密机械研究所 | Visible light and ray pulse detection method with picosecond magnitude and solid stripe camera |
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| 王水才, 贺俊芳, 彭菊芳, 刘晓, 蔡霞: "超快微光分子光谱探测技术研究", 光子学报, vol. 33, no. 07 * |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111562608A (en) * | 2020-04-10 | 2020-08-21 | 中国科学院西安光学精密机械研究所 | X-ray testing system with high time resolution, high sensitivity and multi-spectral-band response |
| CN114414041A (en) * | 2021-12-27 | 2022-04-29 | 中国科学院西安光学精密机械研究所 | Visible light and ray pulse detection method with picosecond magnitude and solid stripe camera |
| CN114414041B (en) * | 2021-12-27 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Visible light and ray pulse detection method with picosecond order and solid stripe camera |
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