CN102320556A

CN102320556A - Method for constructing netty nano ZnO material strain transducer

Info

Publication number: CN102320556A
Application number: CN201110207486A
Authority: CN
Inventors: 张跃; 李萍; 廖庆亮; 张铮
Original assignee: University of Science and Technology Beijing USTB
Current assignee: University of Science and Technology Beijing USTB
Priority date: 2011-07-22
Filing date: 2011-07-22
Publication date: 2012-01-18
Anticipated expiration: 2031-07-22
Also published as: CN102320556B

Abstract

The invention provides a method for constructing a netty nano ZnO material strain transducer. The process comprises the following specific steps of: at low temperature, preheating for 2-4 hours, carrying out hydro-thermal reaction for 6-8 hours to obtain the required nano ZnO material; and then constructing a net-structure flexible strain transducer by adopting an alcohol dispersing process, a spin coating process and the like, and packaging with a polydimethylsiloxane (PDMS) thin film. Compared with the reported ZnO single structure and the reported ZnO vertical/transverse array structure, the net structure in the invention can be used for overcoming the brittleness of ZnO and the complexity of an electronic device process, and the method provided by the invention can be applied to industrial production. The network nano ZnO material strain transducer has high flexibility, high response to micro vibration and small strain, and can be applied to the fields of production monitoring, environment monitoring and the like.

Description

A kind of construction method of meshed nano ZnO material strain sensor

Technical field

The present invention relates to nano material preparation and semiconductor device processing technology field, relate in particular to a kind of construction method of shape nano ZnO material strain transducer Network Based.

Background technology

Sensor has a lot of important use on scientific research and industrial technology, like light/electrical signal detection, flow rate detection, vibration monitoring and electromagnetic wave signal reception etc.Semi-conducting material with its special electricity, mechanics and optical characteristics by structure (the Highly sensitive room temperature sensors based on the UV-LED activation of zinc oxide nanoparticles of number of applications in various kinds of sensors; " Sensors and Actuator B:Chemical "; Vol 134; Issue 2,945-952; Nanoplate field-effect capacitive (bio) chemical sensor array based on SOI structure, " Procedia Chemistry ", vol 1, and Issue 1,670-673).The high-density integration chip that is the basis with the Si semi-conducting material in recent years is according to More's law high speed development.But along with the reduction of live width, traditional processing technology and basic law are challenged.With the monodimension nanometer material is that basic nanoelectronics device passes through assemble method from bottom to top, is considered to one of a kind of effective way that can continue More's law.Nano material can be used for the manufacturing of multiple microdevice because its crystal structure and size and effect factor often have high intensity and toughness, has great application prospect.ZnO is a kind of semi-conducting material with piezoelectric property, can realize that mechanical force arrives the conversion of electric energy; Simultaneously, diameter is that the intensity of the ZnO nano wire of nanoscale increases, and can overcome bigger strain, is desirable piezoelectric sensing modulator material.In recent years; Research (Piezoelectric Field Effect Transistor and Nanoforce Sensor Based on a Single ZnO Nanowire based on the aspects such as nano generator, acoustic detector and piezoelectric field effect transistor of ZnO nano material has been arranged much; " Nano Letters "; 2006.Vol.6, No.12,2768-2772; Power generation with laterally packaged piezoelectric fine wires, " NATURE NANOTECHNOLOGY ", 2008, Vol 4,34-39).

Summary of the invention

The object of the present invention is to provide the construction method of the flexible strain transducer of a kind of network-like ZnO nano material, can under the stress effect, produce deformation, make electric current that bigger variation take place, thereby microvibration and strain are had very high response sensitivity.Simultaneously, a kind of simple process flow that makes up flexible strain transducer is provided, wherein the cost of manufacture of device is low, can adapt to the requirement of large-scale industrial production.

A kind of construction method of meshed nano ZnO material strain sensor, the following two parts of main branch:

1.ZnO the preparation of nano material:

A) preparation Zn (NO ₃) ₂, (CH ₂) ₆The aqueous solution of N4 and PEI (PEI), Zn ²⁺Concentration is 0.05～0.1M, atomic ratio Zn (NO ₃) ₂: (CH ₂) ₆N ₄=1: 1, the concentration of PEI is 0.003～0.009M.Ultrasonic dispersion 15～30min mixes precursor liquid.

B) get precursor liquid 50～200ml and contain in the beaker, sealing is heated 2～4h, filtering reacting solution then down at 80～100 ℃.To filtrate and contain in the agitated reactor, 80～100 ℃ are heated 6～8h down, obtain required ZnO nano material.

2. the structure of meshed nano ZnO material strain sensor:

A) the ZnO nano material dissolving 0.05～1g/5ml that will obtain after the mixed solution of employing alcohol and dimethyl polysiloxane will react, ultrasonic dispersion 10～30s.

B) adopt the ZnO after spin-coating method will disperse to be evenly distributed on polyimides (PI) film, spin coating 1～5 time obtains the ZnO layer.

C) will form the ZnO network with PI film dry 2～10h under 100～180 ℃ of ZnO layer.

D) be fixed on ZnO layer two ends with elargol, and at 50～100 ℃ of following dry 30min, closely contact between making between elargol electrode and ZnO.

E) with dimethyl silicone polymer (PDMS) film entire device is encapsulated 40 ℃ of insulation 0.5～2h under vacuum condition, the structure of completion meshed nano ZnO material strain sensor.With dimethyl silicone polymer (PDMS) film the entire device encapsulation can be prevented external pollution and corrosion.

The single structure of ZnO than existing report is vertical with ZnO/the horizontal array structure, and the network-like structure among the present invention has overcome fragility and the technologic complexity of electronic device of ZnO.Adopt hydro-thermal method to prepare the ZnO nano material at low temperatures, and adopt technologies such as spin coating, dispersion to build the flexible strain transducer of the network-like structure of knowing clearly.The manufacture craft of device is simple, highly sensitive, can be used for the detection of microvibration and small strain signal.The invention has the advantages that:

1. the present invention has prepared the One-Dimensional ZnO nano material at low temperatures, and through disperseing to be coated in to have prepared network-like ZnO structure on the flexible substrates, this structure has overcome the fragility of ZnO, makes the working life of nanometer flexible sensor under extraneous stress/vibration increase.

2. the present invention has utilized strong, the highly sensitive advantage of good stability, signal of network-like ZnO nano material, has improved the life-span and the sensing characteristics of strain transducer.

Description of drawings

Fig. 1 is the stereoscan photograph of network-like ZnO material, therefrom can clearly see ZnO pattern and network-like structure.

Fig. 2 is the I-V indicatrix of flexible strain transducer under tensile stress of being built, and therefrom can find out, electric current reels with device to be stretched stress and increase and to reduce.

The current-responsive curve that Fig. 3 vibrates for device to external world can find out that therefrom device demonstrates good current-responsive under 0.5Hz vibration effect.

The specific embodiment

Existing diagram and the instance of combining further specifies technical scheme of the present invention:

Instance one

Preparation Zn (NO ₃) ₂, (CH ₂) ₆The aqueous solution of N4 and PEI, Zn ²⁺Concentration is 0.05M, atomic ratio Zn (NO ₃) ₂: (CH ₂) ₆N ₄=1: 1, the concentration of PEI is 0.007M.Ultrasonic dispersion 30min mixes precursor liquid.Then, get precursor liquid 100ml and contain in the beaker, sealing is heated 2h down at 95 ℃, and filtering reacting solution.To filtrate and contain in the agitated reactor, 80～100 ℃ are heated 6h down, obtain required ZnO nano material.

The ZnO nano material dissolving 0.2g/5ml that will obtain after the mixed solution of employing alcohol and dimethyl polysiloxane will react, ultrasonic dispersion 20s.Adopt the ZnO after spin-coating method will disperse to be evenly distributed on the PI film, spin coating 3 times obtains the ZnO layer.To form the ZnO network with PI film dry 5h under 150 ℃ of ZnO layer.Be fixed on ZnO layer two ends with elargol, and at 50 ℃ of following dry 30min, closely contact between making between elargol electrode and ZnO.With the PDMS film entire device is encapsulated, 40 ℃ of insulation 0.5～2h prevent external pollution and corrosion etc. under vacuum condition.Device is inserted the external circuit detection system can accomplish the device detection.

Instance two

Preparation Zn (NO ₃) ₂, (CH ₂) ₆N ₄With the aqueous solution of PEI, Zn ²⁺Concentration is 0.05M, atomic ratio Zn (NO ₃) ₂: (CH ₂) ₆N ₄=1: 1, the concentration of PEI is 0.009M.Ultrasonic dispersion 30min mixes precursor liquid.Then, get precursor liquid 100ml and contain in the beaker, sealing is heated 2h down at 95 ℃, and filtering reacting solution.To filtrate and contain in the agitated reactor, 80～100 ℃ are heated 6h down, obtain required ZnO nano material.

The ZnO nano material dissolving 0.1g/5ml that will obtain after the mixed solution of employing alcohol and dimethyl polysiloxane will react, ultrasonic dispersion 20s.Adopt the ZnO after spin-coating method will disperse to be evenly distributed on the PI film, spin coating 5 times obtains the ZnO layer.To form the ZnO network with PI film dry 5h under 150 ℃ of ZnO layer.Be fixed on ZnO layer two ends with elargol, and at 50 ℃ of following dry 30min, closely contact between making between elargol electrode and ZnO.With the PDMS film entire device is encapsulated, 40 ℃ of insulation 0.5～2h prevent external pollution and corrosion etc. under vacuum condition.Device is inserted the external circuit detection system can accomplish the device detection.

Claims

1. the construction method of a meshed nano ZnO material strain sensor, its characteristic is divided following two parts:

1), the preparation of ZnO nano material:

A) preparation Zn (NO ₃) ₂, (CH ₂) ₆N4 and PEI are called for short the aqueous solution of PEI, Zn ²⁺Concentration is 0.05～0.1M, atomic ratio Zn (NO ₃) ₂: (CH ₂) ₆N ₄=1: 1, the concentration of PEI is 0.003～0.009M, and ultrasonic dispersion 15～30min mixes precursor liquid;

B) get precursor liquid 50～200ml and contain in the beaker, seal, heat 2～4h down at 80～100 ℃, filtering reacting solution will be filtrated and contained in the agitated reactor then, and 80～100 ℃ are heated 6～8h down, obtain required ZnO nano material;

2), the structure of meshed nano ZnO material strain sensor:

A) the ZnO nano material dissolving 0.05～1g/5ml that will obtain after the mixed solution of employing alcohol and dimethyl polysiloxane will react, ultrasonic dispersion 10～30s;

B) adopt the ZnO after spin-coating method will disperse to be evenly distributed on the Kapton, spin coating 1～5 time obtains the ZnO layer;

C) will form the ZnO network with Kapton dry 2～10h under 100～180 ℃ of ZnO layer;

D) be fixed on ZnO layer two ends with elargol, and at 50～100 ℃ of following dry 30min, closely contact between making between elargol electrode and ZnO;

E) with the dimethyl silicone polymer film entire device is encapsulated 40 ℃ of insulation 0.5～2h under vacuum condition, the structure of completion meshed nano ZnO material strain sensor.