CN102315167A - Wide visual angle LCD array substrate manufacturing method - Google Patents
Wide visual angle LCD array substrate manufacturing method Download PDFInfo
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- CN102315167A CN102315167A CN201110264229A CN201110264229A CN102315167A CN 102315167 A CN102315167 A CN 102315167A CN 201110264229 A CN201110264229 A CN 201110264229A CN 201110264229 A CN201110264229 A CN 201110264229A CN 102315167 A CN102315167 A CN 102315167A
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Abstract
The invention provides a wide visual angle LCD (liquid crystal display) array substrate manufacturing method. The method comprises the following steps: providing a substrate, and forming a transparent conductive film and a grid metal layer on the substrate in order; pasting a light-sensitive material on the substrate, carrying out exposure and development by using a half-toning mask plate, and forming a light-sensitive material figure with different thicknesses on the substrate; carrying out etching on the substrate to form a first transparent electrode; carrying out stripping on the substrate forming the transparent electrode, removing the light-sensitive material and forming a grid; forming an active layer, a source drain electrode, a protective layer and a second transparent electrode in order on the substrate which forms the first transparent electrode and the grid.
Description
Technical field
The present invention relates to the display manufacture technology field, relate to a kind of wide-angle liquid crystal display array base palte manufacture method in particular.
Background technology
LCD is a kind of display device of planar ultra-thin; Have low radiation, advantage such as power consumption is little and volume is little; Particularly the LCD of wide viewing angle because its color does not receive the restriction at visual angle, is seen from all angles; Its color change is very little, and the display that therefore is widely used in television set, computer, mobile phone etc. is made the field.
But because wide-angle liquid crystal display involves great expense, particularly make, therefore how to reduce the cost of manufacture of array base palte, become problem demanding prompt solution in the technology of LCD (Liquid Crystal Display) array substrate.
In the existing wide-angle liquid crystal display array base palte manufacture method; Usually adopt six road mask fabrication technologies; The first road mask fabrication technology is sputter gate metal film on substrate, produces grid through lithographic process such as overexposure, development, etchings then, and the second road mask fabrication technology is to be manufactured with sputter transparent conductive film on the substrate of grid; Make a transparency electrode through technologies such as overexposure, development, etchings; The 3rd road mask fabrication technology is for making active layer being manufactured with on the substrate of pixel electrode, the 4th road mask fabrication technology is used to make source-drain electrode, and the 5th road mask fabrication technology is used for defining the protective layer pattern; Make protective layer, on substrate, form another transparency electrode through the 6th road mask fabrication then.
Can be found out that by said process existing wide-angle liquid crystal display array base palte manufacture method adopts six road mask fabrication technologies, the making flow process is more, and fabrication cycle is long, thereby causes cost of manufacture higher.
Summary of the invention
In view of this, the present invention provides a kind of manufacture method of wide-angle liquid crystal display array base palte, and is many in order to solve array base palte making flow process, causes the high problem of cost of manufacture.
For realizing above-mentioned purpose, the present invention provides following technical scheme:
A kind of wide-angle liquid crystal display array base palte manufacture method, said method comprises:
One substrate is provided, on said substrate, forms transparent conductive film and gate metal layer successively;
On said substrate, be coated with light-sensitive material, use intermediate tone mask version is made public and is developed, and forms the light-sensitive material figure of different-thickness;
On the substrate of the light-sensitive material figure of said formation different-thickness, carry out etching and form first transparency electrode;
Substrate to said formation transparency electrode carries out demoulding, removes light-sensitive material, forms grid;
On the substrate of said formation first transparency electrode and grid, make active layer, source-drain electrode, protective layer and second transparency electrode successively.
Preferably, the grid of counterpart substrate making zone is light tight zone on the said intermediate tone mask version, and it is the part transmission region that first transparency electrode is made the zone, and other zones are transmission region, then,
The light-sensitive material figure of the different-thickness of said formation is specifically: the light-sensitive material that the substrate grid is made the zone all keeps, and first transparency electrode is made regional light-sensitive material and partly kept, and other regional light-sensitive materials are removed.
Preferably, on the substrate of said light-sensitive material figure at said formation different-thickness, carry out etching and form first transparency electrode and comprise:
Remove gate metal layer and transparent conductive film on other zones of substrate through etching technics, and first transparency electrode is made the light-sensitive material on the zone;
Remove first transparency electrode through etching technics and make the gate metal layer on the zone, form first transparency electrode.
Preferably, said through gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Define first etching parameters and carry out dry etching, remove the gate metal layer on other zones of substrate, said first etching parameters comprises that first selects ratio;
Define second etching parameters and carry out dry etching, remove the light-sensitive material that other the regional transparent conductive films of substrate and first transparency electrode are made the zone, said second etching parameters comprises that second selects ratio.
Preferably, said through gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Carry out wet etching, remove the gate metal layer on other zones of substrate;
Define second etching parameters and carry out dry etching, first transparent conductive film and first transparency electrode removed on other zones of substrate are made the light-sensitive material on the zone.
Preferably, said through gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Define the 3rd etching parameter and carry out dry etching, remove substrate other regional gate metal layer and transparent conductive films, and the light-sensitive material in first transparency electrode making zone, said the 3rd etching parameter comprises that the 3rd selects ratio.
Preferably, remove first transparency electrode through etching technics and make the gate metal layer on the zone, form first transparency electrode and be specially:
Carry out wet etching, remove said first transparency electrode and make the gate metal layer on the zone, form first transparency electrode.
Preferably, remove the gate metal layer that first transparency electrode is made the zone, form first transparency electrode and be specially through etching technics:
Define the 4th etching parameters and carry out dry etching, remove first transparency electrode and make the gate metal layer on the zone, form first transparency electrode, said the 4th etching parameters comprises that the 4th selects ratio.
Preferably, said substrate to said formation transparency electrode carries out demoulding, removes light-sensitive material, forms grid and is specially:
Grid to the substrate that forms first transparency electrode is made regional demoulding, removes grid and makes the light-sensitive material on the zone, forms grid.
Preferably, saidly on said substrate, form transparent conductive film successively and gate metal layer is specially:
Sputter transparent conductive film and gate metal successively on said substrate
Can know via above-mentioned technical scheme, compared with prior art, the invention provides a kind of wide-angle liquid crystal display array base palte manufacture method; On the substrate that provides, form transparent conductive film and gate metal layer successively; Utilize the intermediate tone mask version to make public, develop, through the method for dry etching or wet etching; On substrate, form first transparency electrode and grid; On the substrate that forms first transparency electrode and grid, make active layer, source-drain electrode, protective layer and second transparency electrode afterwards, first transparency electrode can be accomplished with being produced in the mask fabrication technology of grid, thereby makes original six road mask fabrication technologies become five road mask fabrication technologies; Reduce the making flow process of array base palte, and then reduced cost of manufacture.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is embodiments of the invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to the accompanying drawing that provides.
Fig. 1 is the flow chart of a kind of wide-angle liquid crystal display array base palte of the present invention manufacture method embodiment 1;
Structural representation when Fig. 2 makes public for substrate of the present invention;
Fig. 3 is substrate of the present invention structural representation after developing;
Fig. 4 is the flow chart of a kind of wide-angle liquid crystal display array base palte of the present invention manufacture method embodiment 2;
Fig. 5 is the structural representation after etching of substrate of the present invention;
Fig. 6 is substrate of the present invention structural representation after the etching once more;
Fig. 7 forms the structural representation after first transparency electrode for substrate of the present invention;
Fig. 8 forms the structural representation behind first transparency electrode and the grid for substrate of the present invention.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
Said as background technology; How reducing the cost of manufacture of array base palte, is to need problem demanding prompt solution during present wide-angle liquid crystal display is made, and the making flow process of existing wide-angle liquid crystal display array base palte comprises six road mask fabrication technologies; Also be that each road mask fabrication technology all need be passed through gluing, exposure, development, etching, the lithographic process of complicacy such as remove photoresist forms required pattern; And, then can influence the quality problems of LCD if reduce the cost of each road mask fabrication technology, therefore; The inventor changes the thinking angle; Original six road mask fabrication technologies are reduced to five road mask fabrication technologies, have reduced the making flow process of substrate, and then reduced cost of manufacture.
One of main thought of the present invention can comprise: on the substrate that provides, form transparent conductive film and gate metal layer simultaneously; Pass through mask fabrication technology then one; Be lithographic process, comprise that steps such as utilizing the exposure of intermediate tone mask version, development, etching forms first transparency electrode and grid, and then on the substrate that forms first transparency electrode and grid, make active layer, source-drain electrode, protective layer and second transparency electrode; Reduce the substrate manufacture flow process, reduced cost of manufacture.
Referring to Fig. 1, show the flow chart of a kind of wide-angle liquid crystal display array base palte of the present invention manufacture method embodiment 1, can comprise:
Step 101 a: substrate is provided, on said substrate, forms transparent conductive film and gate metal layer successively.
Said substrate can be selected glass substrate; Said transparent conductive film can select ITO (tin indium oxide), IZO (indium zinc oxide) or other to possess the material of transparent and electrically conductive performance; Said gate metal layer is the metal that is used for manufacturing grid, can comprise one or more layers structure.
Said substrate has arranged transparency electrode and has made zone and grid making zone.
At first substrate is cleaned, move into sputtering equipment sputter transparent conductive film and gate metal successively, wherein gate metal layer is positioned on the transparent conductive film, comprises one deck or multilayer.
Need to prove that on substrate, form transparent conductive film and gate metal layer and do not limit the mode with sputter, it can also be perhaps other film-forming process of vapor deposition.
Step 102: on said substrate, be coated with light-sensitive material, use intermediate tone mask version is made public and is developed, and forms the light-sensitive material figure of different-thickness.
Light-sensitive material can form required figure through exposure imaging in photoetching process, be used to make various electrode patterns.For example can select photoresist for use, said light-sensitive material can be positivity, also can be negativity, specifically defines according to the production flow process is different.
Spin coating photoresist on the substrate after the film forming utilizes the intermediate tone mask version to make public, and can form the light-sensitive material figure of different-thickness after the development, and the intermediate tone mask version requires to be provided with according to the nature difference and the subsequent etching of light-sensitive material.Present embodiment is an example with the light-sensitive material of positivity, and other zones of removing grid making zone and first transparency electrode making zone on the definition substrate are the 3rd zone, then; Described intermediate tone mask version is light tight zone for the place that makes the zone at the grid of counterpart substrate, and the place that corresponding first transparency electrode is made the zone is the part transmission region, and the place in corresponding the 3rd zone is the mask of transmission region; Light tight location exposure light can not pass through; Should can not remove by the zone light-sensitive material after the development, transmission region place exposure light can pass through, and light-sensitive material that should the zone after the development is all removed; The part transmission region is that mask is carried out the GTG design; Make exposure light partly to pass through, the light-sensitive material in development bonnet zone is removed by part, therefore; After utilizing the intermediate tone mask version to make public and develop, can form the light-sensitive material figure of different-thickness.
After Fig. 2 shows the substrate film forming; Structural representation when making public comprises substrate 201, is positioned at transparent conductive film 202 on the substrate 201, is positioned at the gate metal layer 203 on the transparent conductive film 202, is coated on the light-sensitive material 204 on the gate metal layer 203; Intermediate tone mask version 205; Be used for exposure, the grid of wherein light tight regional 2051 counterpart substrates 201 is made the zone, and first transparency electrode of part transmission region 2052 counterpart substrates 201 is made the zone; Other zones of transmission region 2053 counterpart substrates, i.e. the 3rd zone.
Fig. 3 shows the structural representation after substrate develops, and can be found out by Fig. 3, utilizes intermediate tone mask 205 to make public, and promptly forms the light-sensitive material figure of different-thickness after the development.
Step 103: on the substrate of the light-sensitive material figure of said formation different-thickness, carry out etching and form first transparency electrode.
After substrate after the film forming carried out exposure imaging; At first carry out etching and form first transparency electrode; Etch away first transparency electrode through etching technics and make light-sensitive material and gate metal layer on the transparent conductive film in zone; Form first transparency electrode, etched away other zones simultaneously, be i.e. gate metal layer and transparent conductive film on the 3rd zone.
Behind the literary composition detailed description is arranged after the concrete etching process.
Step 104: the substrate to said formation transparency electrode carries out demoulding, removes light-sensitive material, forms grid.
At last, substrate is carried out demoulding again, remove remaining light-sensitive material, can form gate pattern.
Step 105: on the substrate of said formation first transparency electrode and grid, make active layer, source-drain electrode, protective layer and second transparency electrode successively.
On the substrate of making first transparency electrode and grid, on substrate, form active layer, source-drain electrode, protective layer and second transparency electrode successively through mask fabrication technologies such as gluing, exposure, development and etchings more respectively.Can accomplish the making of the array base palte of this LCD.The manufacture craft flow process of making active layer, source-drain electrode, protective layer and second transparency electrode is identical with prior art, repeats no more at this.
Wherein, Said second transparency electrode is made as different electrodes with first transparency electrode according to different actual demand definition, and when said first transparency electrode was pixel electrode, then said second transparency electrode was a current electrode; When said first transparency electrode is current electrode; Then said second transparency electrode is a pixel electrode, said pixel electrode and current electrode, and the pictorial pattern of its formation is different.
In the present embodiment; On the substrate that provides, form transparent conductive film and gate metal layer simultaneously; Pass through mask fabrication technology then one, promptly lithographic process comprises and utilizes the exposure of intermediate tone mask version, development, etching etc. to form first transparency electrode and grid; First transparency electrode can be accomplished with being produced in the mask fabrication technology of grid; Thereby make original six road mask fabrication technologies become five road mask fabrication technologies, reduced the making flow process of array base palte, thereby reduced the substrate manufacture cost.
Referring to Fig. 4, show the flow chart of a kind of wide-angle liquid crystal display array base palte of the present invention manufacture method embodiment 2, can comprise:
Step 401 a: substrate is provided, on said substrate, forms transparent conductive film and gate metal layer successively.
Step 402: on said substrate, be coated with light-sensitive material, use intermediate tone mask version is made public and is developed, and forms the light-sensitive material figure of different-thickness.
The operation of step 401 and step 402 is identical with step 102 with method embodiment 1 step 101, repeats no more at this.
Step 403: remove gate metal layer and transparent conductive film on other zones of substrate through etching technics, and first transparency electrode is made the light-sensitive material on the zone.
Wherein, as an embodiment, the operation of said step 403 can specifically comprise:
1a: define first etching parameters and carry out dry etching, remove other regional gate metal layer of substrate.
First etching parameters comprises that first selects ratio; Select than being an important parameter when carrying out dry etching; Be the ratio of the etch rate of different materials, etch rate is the degree of depth of unit interval internal corrosion, because the etch rate of different materials is different; Material thickness is also different, therefore can define different selection ratios.
Because dry etching is hoped the part of etching except meeting etches away; Also can the part of not hoping etching be caused damage; Therefore in the present embodiment, need definition suitable selection ratio, guarantee that dry etching can only etch away other regional gate metal layer of substrate fully; And the transparent conductive film on other zones, and grid is made light-sensitive material on the zone and first transparency electrode and can be etched or be etched sub-fraction.
In said first etching parameters first selected than being meant: gate metal layer etch rate/transparency electrode etch rate, and, gate metal etch rate/light-sensitive material etch rate.
Therefore select the first suitable selection than carrying out dry etching, can remove the gate metal layer on other zones of substrate fully.And for the transparent conductive film on other zones, and grid makes the zone and can not remove fully with the light-sensitive material on first transparency electrode making zone, still can keep.
Wherein, described other zones are the 3rd zone of definition among the method embodiment 1.
1b: define second etching parameters and carry out dry etching, remove the light-sensitive material that other the regional transparent conductive films of substrate and first transparency electrode are made the zone.
Described second etching parameters comprises that second selects ratio.
Step 1b continues to adopt dry etching, defines the second suitable selection ratio, and said second selects than being meant: transparency electrode etch rate/gate metal layer etch rate, and, transparency electrode etch rate/light-sensitive material etch rate.
Select than carrying out dry etching according to second in this second etching parameters, thereby make it possible to get rid of the transparent conductive film on other zones of substrate, get rid of the light-sensitive material on first transparency electrode making zone simultaneously.
Need to prove; Defining first etching parameters and second etching parameters is to hope to be etched away part separately according to each rete and light-sensitive material, does not hope that the part that is etched away defines, after satisfied etching parameters according to definition is carried out dry etching; Can etch away the material that hope is etched away; Keep and not hope the material that is etched away, the pattern that formation need obtain also will be considered the factors such as thickness, material of each rete and light-sensitive material.
Also need to prove; It is to comprise selecting ratio that said first etching parameters and second etching parameters have more than; Other technological parameters that it can also comprise the etching power of etching machine and influence dry etching, for example: parameters such as etching gas kind, radio-frequency power, gas pressure intensity, electrode spacing.Fig. 5 shows substrate through behind the step 1a, promptly removes the structural representation after other regional gate metal layer.
Fig. 6 promptly removes the structural representation after other the regional transparent conductive films and first transparency electrode are made the light-sensitive material in zone after showing substrate process step 1b.
Wherein, as another embodiment, the operation of said step 403 can also specifically comprise:
2a: carry out wet etching, remove other regional gate metal layer of substrate.
Remove the method that other regional gate metal layer of substrate can also adopt wet etching; Wet etching only can be got rid of the material that hope is etched away, and can not exert an influence to other regional retes, therefore; Utilize wet etching, can etch away the gate metal layer on other zones fully.Board structure sketch map through behind the step 2a is also as shown in Figure 5; The thickness that is light-sensitive material on the substrate is possibly greater than the thickness after the process step 1a etching; Because the wet etching of this step only can be got rid of the gate metal layer on other zones, and can not exert an influence for light-sensitive material.
Said wet etching is a film etching processing of utilizing chemical liquid to carry out, needs to consider the selection of etching soup kind, the parameters such as concentration, etching temperature and time of etching soup.
2b: define second etching parameters and carry out dry etching, remove first transparent conductive film and first transparency electrode in other zones of substrate and make the light-sensitive material in zone.Board structure sketch map through after the step 2b operation is also as shown in Figure 6.
This step is identical with above-mentioned steps 1b operation, repeats no more at this.
Wherein, as another embodiment, the operation of said step 403 can also specifically comprise:
3a: define the 3rd etching parameter and carry out dry etching, remove substrate other regional gate metal layer and transparent conductive films, and first transparency electrode is made the light-sensitive material in zone.
Said the 3rd etching parameter comprises that the 3rd selects ratio.
The described the 3rd selects than being meant: gate metal layer etch rate/transparent conductive film etch rate, and gate metal layer etch rate/light-sensitive material etch rate, and, transparent conductive film etch rate/light-sensitive material etch rate.
The 3rd suitable selection ratio is set, carries out dry etching, make it possible to remove fully substrate other regional gate metal layer and transparent conductive films, and first transparency electrode is made the light-sensitive material in zone.
Need to prove; It is to comprise selecting ratio that said the 3rd etching parameter has more than; Other technological parameters that can also comprise the etching power of etching machine and influence dry etching, for example: parameters such as etching gas kind, radio-frequency power, gas pressure intensity, electrode spacing.
Step 404: remove first transparency electrode through etching technics and make the gate metal layer on the transparent conductive film in zone, form first transparency electrode.
Wherein, this step 404 can be specially through wet etching, removes said first transparency electrode and makes the gate metal layer on the transparent conductive film in zone, forms first transparency electrode.
Utilize wet etching can directly get rid of first transparency electrode and make the gate metal layer on the regional transparent conductive film; Make the zone in first transparency electrode and form first transparent electrode pattern, can not cause damage to the material on other zones and the gate metal making zone simultaneously.
Wherein, this step 404 can also be specially definition the 4th etching parameters and carry out dry etching, removes the gate metal layer that first transparency electrode is made the zone, forms first transparency electrode.
Said the 4th etching parameters comprises that the 4th selects ratio, and the said the 4th selects than being meant: gate metal layer etch rate/transparent conductive film etch rate, and gate metal layer etch rate/light-sensitive material etch rate.
The 4th suitable selection is set than carrying out dry etching, makes it possible to get rid of fully first transparency electrode and make the gate metal layer on the transparent conductive film in zone.
Need to prove; Said the 4th etching parameters does not just comprise yet selects ratio; Other technological parameters that it can also comprise the etching power of etching machine and influence dry etching, for example: parameters such as etching gas kind, radio-frequency power, gas pressure intensity, electrode spacing.
Fig. 7 shows the structural representation that substrate forms first transparent electrode pattern.
Step 405: the grid to the substrate that forms first transparency electrode is made regional demoulding, removes grid and makes the light-sensitive material on the zone, forms grid.
Through after the operation of step 401～step 404; Substrate is made the zone in first transparency electrode and is formed first transparent electrode pattern; Also have light-sensitive material but make the zone, therefore, need demoulding at gate metal; Said light-sensitive material is peeled off, finally made the zone and form gate pattern at gate metal.
Fig. 8 shows the structural representation behind good transparency electrode of substrate manufacture and the grid.
Step 406: on the substrate of said formation first transparency electrode and grid, make active layer, source-drain electrode, protective layer and second transparency electrode successively.
In the present embodiment, substrate is making public, after the development; Adopt the method for dry etching or wet etching; On substrate, form first transparency electrode and grid, only adopt lithographic process one, can form transparency electrode and grid; Therefore reduce the making flow process, and then can reduce the cost of manufacture of substrate.
In practical application, LCDs is widely used in the high-tech products such as intelligent computer, panel computer, particularly the wide viewing angle film LCDs of transverse electric field; But because its construction cycle is long, processing procedure is many, makes cost of manufacture very high; And employing embodiment of the present invention; Can reduce the making flow process of array base palte in the wide-angle liquid crystal display, the minimizing of technological process has reduced cost of manufacture; And owing to manufacture craft when making each electrode is identical, thereby also reduced the frequent use of making apparatus.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
Need to prove; In this article; Relational terms such as first and second grades only is used for an entity or operation are made a distinction with another entity or operation, and not necessarily requires or hint relation or the order that has any this reality between these entities or the operation.And; Term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability; Thereby make and comprise that process, method, article or the equipment of a series of key elements not only comprise those key elements; But also comprise other key elements of clearly not listing, or also be included as this process, method, article or equipment intrinsic key element.Under the situation that do not having much more more restrictions, the key element that limits by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises said key element and also have other identical element.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (10)
1. wide-angle liquid crystal display array base palte manufacture method is characterized in that said method comprises:
One substrate is provided, on said substrate, forms transparent conductive film and gate metal layer successively;
On said substrate, be coated with light-sensitive material, use intermediate tone mask version is made public and is developed, and forms the light-sensitive material figure of different-thickness;
On the substrate of the light-sensitive material figure of said formation different-thickness, carry out etching and form first transparency electrode;
Substrate to said formation transparency electrode carries out demoulding, removes light-sensitive material, forms grid;
On the substrate of said formation first transparency electrode and grid, make active layer, source-drain electrode, protective layer and second transparency electrode successively.
2. according to the said method of claim 1, it is characterized in that the grid of counterpart substrate making zone is light tight zone on the said intermediate tone mask version, it is the part transmission region that first transparency electrode is made the zone, and other zones are transmission region, then,
The light-sensitive material figure of the different-thickness of said formation is specifically: the light-sensitive material that the substrate grid is made the zone all keeps, and first transparency electrode is made regional light-sensitive material and partly kept, and other regional light-sensitive materials are removed.
3. method according to claim 2 is characterized in that, on the substrate of said light-sensitive material figure at said formation different-thickness, carries out etching and forms first transparency electrode and comprise:
Remove gate metal layer and transparent conductive film on other zones of substrate through etching technics, and first transparency electrode is made the light-sensitive material on the zone;
Remove first transparency electrode through etching technics and make the gate metal layer on the zone, form first transparency electrode.
4. method according to claim 3 is characterized in that, and is said through gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Define first etching parameters and carry out dry etching, remove the gate metal layer on other zones of substrate, said first etching parameters comprises that first selects ratio;
Define second etching parameters and carry out dry etching, remove the light-sensitive material that other the regional transparent conductive films of substrate and first transparency electrode are made the zone, said second etching parameters comprises that second selects ratio.
5. method according to claim 3 is characterized in that, and is said through gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Carry out wet etching, remove the gate metal layer on other zones of substrate;
Define second etching parameters and carry out dry etching, first transparent conductive film and first transparency electrode removed on other zones of substrate are made the light-sensitive material on the zone.
6. method according to claim 3 is characterized in that, and is said through gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Define the 3rd etching parameter and carry out dry etching, remove substrate other regional gate metal layer and transparent conductive films, and the light-sensitive material in first transparency electrode making zone, said the 3rd etching parameter comprises that the 3rd selects ratio.
7. method according to claim 3 is characterized in that, removes first transparency electrode through etching technics and makes the gate metal layer on the zone, forms first transparency electrode and is specially:
Carry out wet etching, remove said first transparency electrode and make the gate metal layer on the zone, form first transparency electrode.
8. method according to claim 3 is characterized in that, removes the gate metal layer that first transparency electrode is made the zone through etching technics, forms first transparency electrode and is specially:
Define the 4th etching parameters and carry out dry etching, remove first transparency electrode and make the gate metal layer on the zone, form first transparency electrode, said the 4th etching parameters comprises that the 4th selects ratio.
9. according to each described method of claim 3～8, it is characterized in that said substrate to said formation transparency electrode carries out demoulding, remove light-sensitive material, form grid and be specially:
Grid to the substrate that forms first transparency electrode is made regional demoulding, removes grid and makes the light-sensitive material on the zone, forms grid.
10. method according to claim 1 is characterized in that, saidly on said substrate, forms transparent conductive film successively and gate metal layer is specially:
Sputter transparent conductive film and gate metal successively on said substrate.
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| WO2014012334A1 (en) * | 2012-07-20 | 2014-01-23 | 京东方科技集团股份有限公司 | Manufacturing method of array substrate and array substrate and display device |
| CN104300002A (en) * | 2013-07-15 | 2015-01-21 | 信利半导体有限公司 | Thin film transistor and manufacturing method and photoetching process thereof |
| CN107424909A (en) * | 2016-05-17 | 2017-12-01 | 三星显示有限公司 | The manufacture method of deposition mask |
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| WO2014012334A1 (en) * | 2012-07-20 | 2014-01-23 | 京东方科技集团股份有限公司 | Manufacturing method of array substrate and array substrate and display device |
| KR101522481B1 (en) * | 2012-07-20 | 2015-05-21 | 보에 테크놀로지 그룹 컴퍼니 리미티드 | Method for fabricating array substrate, array substrate and display device |
| US9040344B2 (en) | 2012-07-20 | 2015-05-26 | Boe Technology Group Co., Ltd. | Method for fabricating array substrate, array substrate and display device |
| CN104300002A (en) * | 2013-07-15 | 2015-01-21 | 信利半导体有限公司 | Thin film transistor and manufacturing method and photoetching process thereof |
| CN104300002B (en) * | 2013-07-15 | 2017-05-31 | 信利半导体有限公司 | A kind of thin film transistor (TFT) and its manufacture method, photoetching process |
| CN107424909A (en) * | 2016-05-17 | 2017-12-01 | 三星显示有限公司 | The manufacture method of deposition mask |
| CN107424909B (en) * | 2016-05-17 | 2023-12-19 | 三星显示有限公司 | Method for manufacturing mask for deposition |
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| CN102315167B (en) | 2013-09-25 |
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