CN102314075A - Composite mask and manufacturing method thereof - Google Patents
Composite mask and manufacturing method thereof Download PDFInfo
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- CN102314075A CN102314075A CN 201010223464 CN201010223464A CN102314075A CN 102314075 A CN102314075 A CN 102314075A CN 201010223464 CN201010223464 CN 201010223464 CN 201010223464 A CN201010223464 A CN 201010223464A CN 102314075 A CN102314075 A CN 102314075A
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Abstract
The invention provides a composite mask and a manufacturing method thereof, wherein the manufacturing method comprises the following steps of: providing a semiconductor substrate and forming a first mask layer with a first stripped pattern on the bottom surface of the semiconductor substrate; forming a second mask layer on the surfaces of the first mask layer and the semiconductor substrate, wherein the second mask layer is provided with a second striped pattern vertical to the first stripped pattern, and the second mask layer is made of material different from that of the first mask layer; etching the first mask layer by taking the second mask layer as a mask until the first mask layer is exposed out of the semiconductor substrate; bombarding one side surface of the second mask layer by adopting a targeted iron injection process to form a hardened side wall; and carrying out appearance correction on the second mask layer by adopting a plasma etching process to reduce the width of the second mask layer and expose the first mask layer at the bottom. Compared with the prior art, the composite mask formed by the invention avoids pattern distortion generated by an optical proximity effect and is suitable for manufacturing a dog-bone-shaped interconnection structure with small feature size.
Description
Technical field
The present invention relates to semiconductor fabrication process, relate in particular to a kind of composite mask and preparation method thereof.
Background technology
In semi-conductive interconnection structure, along with the reduction day by day of process, live width also progressively reduces, and when in active area, making contact hole, aims at the difficulty all the more that also seems.Therefore existing a kind of interconnection structure is referred to as dog bone shape interconnection (dog bone).
Fig. 1 is the schematic top plan view of dog bone shape interconnection structure, and is as shown in Figure 1, and said dog bone shape interconnection specifically refers to: the contact region 20 that the square shape is set on thinner active line 10 (for example metal interconnecting wires, grid line etc.) is used to make contact hole.The width of said square shape contact region 20 is greater than the width of active line 10, and area is bigger, aims at when therefore being easier to make contact hole.
For making above-mentioned dog bone shape interconnection structure, need to form earlier corresponding mask, the figure of said mask is identical with said dog bone shape.In the conventional semiconductor technology, the making step of mask comprises: form mask layer and photoresist at semiconductor substrate surface, resist exposure is graphical, be the mask etching mask layer with the photoresist, with said figure transfer to mask layer.
There is following problem in existing mask manufacture technology: along with the micro of semiconductor technology characteristic dimension, after getting into 45nm technology, the optical proximity effect that exists in the photoetching is also more and more serious.As shown in Figure 1 again, the spacing between the active line 10 is dwindled, and can cause being positioned at adjacent contact district 20 hypotelorisms on the different active lines 10.Make public the photoresist figure that forms with as shown in Figure 2 according to above-mentioned dog bone shape figure.In Fig. 2, adjacent contact region 20 figures are because hypotelorism produces serious optical proximity effect, and the distortion of generation figure.The shape of contact region 20 figures no longer is a strict square shape and be ellipticity, the width basically identical of its width and active line 10 figures.Mask according to above-mentioned photoresist graphic making can't form required dog bone shape interconnection structure.
Therefore,, need simple, the with low cost mask manufacture method of a kind of technological process of exploitation, solve the picture distortion problem that optical proximity effect produced for semiconductor technology than small-feature-size.
Summary of the invention
The problem that the present invention solves provides a kind of composite mask and preparation method thereof, is used for forming as etching the mask of dog bone shape interconnection structure, the picture distortion problem that can avoid optical proximity effect to produce.
Composite mask method for making provided by the invention comprises:
Semiconductor substrate is provided, forms first mask layer at said semiconductor substrate surface with first bar paten;
Surface in said first mask layer and Semiconductor substrate forms second mask layer; Said second mask layer has second bar paten; Said second bar paten is perpendicular to said first bar paten, and the material of said second mask layer and first mask layer is inequality;
With second mask layer is that said first mask layer of mask etching is until exposing Semiconductor substrate;
Adopt directed ion implantation technology to bombard a wherein side of second mask layer, form the sclerosis sidewall;
Adopt plasma etching industrial that second mask layer is carried out the profile correction, reduce the width of said second mask layer, expose first mask layer of bottom.
Optional, said first bar paten comprises two bargraphss that are parallel to each other at least.Said first mask layer is hard mask.The method of said formation first mask layer comprises: form first mask layer in Semiconductor substrate; Form patterned photoresist on the surface of first mask layer, said photoresist figure is a bargraphs; With said photoresist is mask, adopts plasma etching industrial to form first mask layer, and removes said photoresist.
Optional, said second bar paten comprises two bargraphss that are parallel to each other at least.Said second mask layer is a photoresist.The method of second mask layer of said formation bar shaped comprises: graphical at the surperficial spin coating photoresist of first mask layer and Semiconductor substrate to said resist exposure, form second bar paten perpendicular to first bar paten.
Said composite mask is used for etching and forms interconnection structure, and said profile correction is decreased to the bargraphs width of second mask layer width of active line in the interconnection structure.
In the said ion implantation technology, the bombardment direction of ion and the angle of the second mask layer sidewall are 7～15 degree.The ionic species that said ion implantation technology adopts is Ar ion or P ion.
Based on above-mentioned method for making, composite mask provided by the present invention is formed at semiconductor substrate surface, comprising:
Be positioned at first mask layer with square shape pattern of semiconductor substrate surface; Be positioned at the first mask layer part surface and extend to second mask layer with bar paten of semiconductor substrate surface; Be positioned at the wherein sclerosis sidewall of a side of said second mask layer, the corresponding side surface flush of first mask layer of said sclerosis sidewall and bottom.
Optional, the bar paten of said second mask layer comprises two bargraphss that are parallel to each other at least, and is positioned at second mask layer bottom of said each bargraphs, comprises first mask layer of two square shape patterns at least.Said first mask layer is hard mask.Said second mask layer is a photoresist.Said composite mask is used for etching and forms interconnection structure, and said bargraphs width equals the width of active line in the interconnection structure.
The present invention makes two kinds of vertical each other and superpose bar shaped masks respectively at semiconductor substrate surface; And first mask layer of removing bottom being positioned at is exposed to outer part; And then adopt plasma etching that second mask layer that is positioned at the top is carried out the profile correction, finally form the composite mask structure of dog bone shape.Said method has been avoided in the traditional masks manufacture craft, when resist exposure is carried out figure transfer, and the picture distortion problem that produces because of optical proximity effect.Therefore composite mask according to the invention is more suitable for being used to make the dog bone shape interconnection structure of small-feature-size.
Description of drawings
Through the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purposes, characteristic and advantage of the present invention will be more clear.The parts identical with prior art have used identical Reference numeral in the accompanying drawing.Accompanying drawing and not drawn on scale focus on illustrating purport of the present invention.In the accompanying drawings for clarity sake, amplified the size of layer with the zone.
Fig. 1 is the synoptic diagram of dog bone shape interconnection structure;
Fig. 2 is the picture distortion synoptic diagram when having mask manufacture technology generation optical proximity effect now;
Fig. 3 is the method for making schematic flow sheet of composite mask according to the invention;
Fig. 4 to Fig. 9 is the plan structure synoptic diagram of the composite mask method for making of the embodiment of the invention;
Fig. 4 a to Fig. 9 a is the cross-sectional view of the composite mask method for making of the embodiment of the invention;
Figure 10 uses the synoptic diagram that composite mask etching according to the invention forms dog bone shape grid line;
Figure 10 a is along the diagrammatic cross-section of B-B ' line among Figure 10.
Embodiment
In existing mask manufacture technology, when resist exposure carries out figure transfer, receive the influence of optical proximity effect in the dog bone shape figure between adjacent domain, be easy to generate picture distortion, make that forming dog bone shape figure is tending towards bar shaped, is difficult to realize required effect.For avoiding the optical proximity effect between above-mentioned adjacent domain; The present invention adopts the gradation mask manufacture; On Semiconductor substrate, form two kinds of vertical each other and superpose bar shaped masks; And remove the bar shaped mask be positioned at the bottom and be exposed to outer part, and then adopt plasma etching that the bar shaped mask that is positioned at the top is carried out the profile correction, finally form the composite mask structure of dog bone shape.As shown in Figure 3, the method for making basic step of composite mask according to the invention comprises:
S101, Semiconductor substrate is provided, forms first mask layer at said semiconductor substrate surface with first bar paten;
Wherein, said Semiconductor substrate is not limited to silicon substrate, also comprises the semiconductor devices or the semiconductor structure that have formed; For example when the manufacturing polycrystalline silicon grid line, the base semiconductor substrate of mask just comprises polysilicon layer to be etched and the pad oxide that plays the etching stopping effect.Said first bar paten can be many line images that are parallel to each other, and can be for equally spaced between each bargraphs.Above-mentioned first mask layer can be hard mask, can adopt conventional hard mask pattern metallization processes.For example on hard mask layer, forming the photoresist of exposure figureization, is that mask carries out etching to hard mask layer with the photoresist, accomplishes the transfer of figure, removes this photoresist then, forms first mask layer of above-mentioned bar paten.In this external step,,, also can't influence the effect of figure even there is optical proximity effect in the photoresist figure that is therefore adopted owing to only need form bargraphs.Each bargraphs edge of first mask layer is smooth.
S102, form second mask layer on the surface of said first mask layer and Semiconductor substrate, said second mask layer has second bar paten perpendicular to first bar paten;
Wherein, said second bar paten also can comprise many bargraphss that are parallel to each other, and can be for equally spaced between each bargraphs, and such second mask layer and first mask layer have just intersected to form the groined type structure.Should there be material difference in said second mask layer and first mask layer, so that the plasma etching industrial of following adopted different choice etching ratio divides other etching.Second mask layer can adopt photoresist; Can adopt conventional exposure figure metallization processes, identical with aforementioned reason, only need form bargraphs in this step; Even therefore have optical proximity effect in the said exposure figure process, also can not influence the effect of figure.Each bargraphs edge of second mask also should be smooth.
S103, be that said first mask layer of mask etching is until exposing Semiconductor substrate with second mask layer;
After wherein passing through the etching of this step, first mask layer that originally had first bar paten has only kept the part that is positioned at second mask layer bottom, and this part be projected as squarely, therefore said first mask layer will be divided into square shape pattern.
S104, the directed ion implantation technology of employing are bombarded a wherein side of second mask layer, form the sclerosis sidewall;
Wherein adopt ion implantation technology to bombard second mask layer, rotten sclerosis is taken place a side surface that makes second mask layer receive ion bom bardment, and form the sclerosis sidewall.Said sclerosis sidewall will be protected this side surface of second mask layer, when the following adopted plasma etching industrial carries out the profile correction, not be thinned.
S105, employing plasma etching industrial carry out the profile correction to second mask layer, reduce the width of said second mask layer, expose first mask layer of bottom.
The etching gas that wherein said plasma etching industrial adopted; Should have bigger selective etching ratio to second mask layer; Make said plasma etching industrial when second mask layer is carried out the profile correction; Only can not form a side surface that hardens sidewall and expose in attenuate second mask layer, promptly reduced the width of second mask layer, and first mask layer is not exerted an influence.After the profile correction, first mask layer that is positioned at the square shape pattern of second mask layer bottom will be exposed.Overlook the top of Semiconductor substrate, first mask layer and second mask layer will constitute the mask graph of dog bone shape.The composite mask of being formed with first mask layer and second mask layer is a mask, and the Semiconductor substrate of etching bottom just can access required small-feature-size dog bone shape interconnection graph.
Description through above-mentioned method for making to composite mask of the present invention can know that composite mask according to the invention can't receive the influence of optical proximity effect, can form the mask graph of undersized dog bone shape.
Below in conjunction with concrete embodiment,, carry out detailed introduction to the method for making and the advantage of composite mask according to the invention.Fig. 4 to Fig. 9 is the plan structure synoptic diagram of the composite mask method for making of the embodiment of the invention.
At first shown in Fig. 4 and Fig. 4 a, wherein Fig. 4 a be among Fig. 4 along the diagrammatic cross-section of A-A ' line, form first mask layer 101, bottom anti-reflection layer 102, patterned first photoresist layer 103 successively on the surface of Semiconductor substrate 100.
Concrete; Said first mask layer 101 can be hard mask; In the present embodiment; Said first mask layer 101 adopts silicon dioxide; Deposit through chemical vapor deposition method; Thickness be 200～400
adopt spin coating to form the said bottom anti-reflection layer 102 and first photoresist layer 103 then; The thickness of said bottom anti-reflection layer 102 be 450～800
thickness of said first photoresist layer 103 be 1100～2000
again to first photoresist layer, 103 exposure figureizations, form the linear photoresist figure that is parallel to each other.
Shown in Fig. 5 and Fig. 5 a, wherein Fig. 5 a be among Fig. 5 along the diagrammatic cross-section of A-A ' line, be mask with patterned first photoresist layer 103, etching bottom anti-reflection layer 102, first mask layer 101 successively are until exposing Semiconductor substrate 100.
Concrete, above-mentioned etching technics can adopt conventional hard mask plasma etching industrial, and in the present embodiment, the etching gas that said etching first mask layer 101 adopts is CF
4And He.
After above-mentioned etching is accomplished, also should comprise ashing first photoresist layer 103, and cleaning and removing is removed the step of first photoresist layer 103 and bottom anti-reflection layer 102.
Shown in Fig. 6 and Fig. 6 a, wherein Fig. 6 a be among Fig. 6 along the diagrammatic cross-section of B-B ' line, form patterned second mask layer 104 on first mask layer 101 and Semiconductor substrate 100 surfaces of bar shaped.
Concrete; Said second mask layer, 104 materials can be photoresist; Can adopt spin coating proceeding to be formed at the surface of said first mask layer 101 and Semiconductor substrate 100, have second mask layer 104 of the bargraphs that is parallel to each other then through exposure figure formation.In the present embodiment; The thickness of said second mask layer 102 be 1100～2000
and on the surface of second mask layer 104 also spin coating have thickness be 450～800
top anti-reflective layer (not shown); Said top anti-reflective layer can keep always, and the composite mask that is used for follow-up formation is the mask etching Semiconductor substrate.Said second mask layer 104 and first mask layer 101 are perpendicular.After graphical, from visual angle, Semiconductor substrate top, said second mask layer 104 and first mask layer 101 constitute the groined type shape.
Shown in Fig. 7 and Fig. 7 a, wherein Fig. 7 a be among Fig. 7 along the diagrammatic cross-section of B-B ' line, be mask with said second mask layer 104, etching first mask layer 101 is until exposing Semiconductor substrate 100.
Concrete, said etching technics can adopt and the identical plasma etching industrial of former figuresization first mask layer 101.Through after the above-mentioned etching, first mask layer 101 only keeps the lap that is positioned at second mask layer, 104 bottoms because first mask layer 101 is bargraphs and mutual vertical with second mask layer 104, so above-mentioned lap be projected as square.Final first mask layer 101 that forms is divided into square shape pattern.
Shown in Fig. 8 and Fig. 8 a, wherein Fig. 8 a be among Fig. 8 along the diagrammatic cross-section of B-B ' line, adopt directed ion implantation technology to bombard a wherein side of second mask layer, form sclerosis sidewall 105.
Concrete, in the said ion implantation technology, the bombardment direction of ion and the angle of the second mask layer sidewall can be 7～15 degree, the ionic species of injection can be Ar ion or P ion.In the present embodiment, said second mask layer is a photoresist, and therefore after the bombardment that receives above-mentioned ion, a side surface that is bombarded is with forming harder charring layer, the i.e. conduct sclerosis of said charring layer sidewall 105.Ionic species that is adopted and implant angle will influence the thickness of said sclerosis sidewall 105.For example inject angle and be 7～15 degree, inject ion energy and be 50 ± 10Kev, when adopting the Ar ion, formed sclerosis sidewall 105 thickness are about 50～60nm; And when adopting the P ion, formed sclerosis sidewall 105 thickness are about 60～80nm.The angle that common above-mentioned ion injects is big more, and formed sclerosis sidewall 105 is thick more, otherwise then thin more.
Shown in Fig. 9 and Fig. 9 a, wherein Fig. 9 a be among Fig. 9 along the diagrammatic cross-section of B-B ' line, adopt plasma etching industrial that second mask layer 104 is carried out the profile correction, reduce the width of second mask layer 104, expose bottom first mask layer 101.
Concrete; Said plasma etching industrial only carries out the profile correction to second mask layer 104; And to first mask layer, 101 did not influence; Be that employed etching gas should have bigger selective etching ratio to second mask layer 104, and first mask layer 101 is not possessed etching (etch capabilities too small and can ignore).In the present embodiment, the material of first mask layer 101 is a silicon dioxide, and second mask layer 104 is a photoresist, and in the plasma etching industrial that photoresist profile correction (PRTriming) is adopted, etching gas can be HBr, CH
2F
2And O
2Through after the above-mentioned profile correction, the side that does not form sclerosis sidewall 105 in second mask layer 104 will be thinned, and promptly the width of second mask layer 104 reduces, and exposes first mask layer 101 of bottom.After passing through the profile correction in addition; The width dimensions of said second mask layer, 104 each bargraphs depends on the width of required etching figure; When composite mask for example according to the invention was used for etching formation interconnection structure, the width of each bargraphs should equal the width of active line in the interconnection structure in above-mentioned second mask layer 104.From visual angle, Semiconductor substrate top, first mask layer 101 and second mask layer 104 will constitute dog bone shape figure, and first mask layer 101 sclerosis sidewall 105 surperficial flush on a side and second mask layer 104 wherein.
Through after the above-mentioned technology, said first mask layer 101 and second mask layer 104 have just constituted the composite mask structure.Below be example with the etch polysilicon grid line, introduce the use of composite mask according to the invention.Further shown in Fig. 9 and Fig. 9 a; Wherein Fig. 9 a is along the diagrammatic cross-section of B-B ' line among Fig. 9; Said Semiconductor substrate 100 comprises silicon substrate 110, and the oxygen pad layer 120 and the polysilicon layer 130 on silicon substrate 110 surfaces are mask with said composite mask; The said polysilicon layer 130 of etching is until exposing oxygen pad layer 120., just can access the grid line figure of required dog bone shape.
Concrete; Above-mentioned when being mask etching Semiconductor substrate 100 with the composite mask; Can adopt plasma etching industrial, and the etching gas that uses should can not produce considerable influence to second mask layer 104 of photoresist material and first mask layer 101 of silicon dioxide material.
Based on above-mentioned method for making, composite mask provided by the present invention comprises:
Be positioned at first mask layer with square shape pattern of semiconductor substrate surface; Be positioned at the first mask layer part surface and extend to second mask layer with bar paten of semiconductor substrate surface; Be positioned at the wherein sclerosis sidewall of a side of said second mask layer, the corresponding side surface flush of first mask layer of said sclerosis sidewall and bottom.
Further, said bar paten can comprise two bargraphss that are parallel to each other at least, and is positioned at second mask layer bottom of said each bargraphs, comprises two square shape pattern first mask layers at least.
Because be positioned at second mask layer bottom of different bargraphss, and first mask layer of adjacent square shape pattern, possibly form by the first mask layer etching of same bargraphs.Therefore in the composite mask that the present invention forms, be positioned at second mask layer bottom of different bargraphss, the distribution trend of first mask layer of square shape pattern (quantity, interval etc.) is basic identical.
Said first mask layer is also different with the material of second mask layer.First mask layer plays certain supporting role owing to be positioned at the bottom of second mask layer, adopts hard mask usually, material such as silicon dioxide, silicon nitride for example, and second mask layer can directly make with photoresist, with simplified manufacturing technique.For example in Figure 10 and Figure 10 a illustrated embodiment, when being used for the manufacturing polycrystalline silicon grid line, the first mask layer region forms the gate contact region of square shape with etching, and all the other second mask layer regions then etching form grid line.Wherein, by the contact region figure that the figure transfer of first mask layer obtains, the edge is comparatively clear smooth, does not have the existing picture distortion problem of conventional lithography glue mask.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical scheme of the present invention according to technical spirit of the present invention.
Claims (16)
1. the method for making of a composite mask is characterized in that, comprising:
Semiconductor substrate is provided, forms first mask layer at said semiconductor substrate surface with first bar paten;
Surface in said first mask layer and Semiconductor substrate forms second mask layer, and said second mask layer has second bar paten perpendicular to first bar paten, and the material of said second mask layer and first mask layer is inequality;
With second mask layer is that said first mask layer of mask etching is until exposing Semiconductor substrate;
Adopt directed ion implantation technology to bombard a wherein side of second mask layer, form the sclerosis sidewall;
Adopt plasma etching industrial that second mask layer is carried out the profile correction, reduce the width of said second mask layer, expose first mask layer of bottom.
2. method for making as claimed in claim 1 is characterized in that, said first bar paten comprises two bargraphss that are parallel to each other at least.
3. method for making as claimed in claim 1 is characterized in that, said first mask layer is hard mask.
4. method for making as claimed in claim 3 is characterized in that, the method for said formation first mask layer comprises:
Form first mask layer in Semiconductor substrate;
Form patterned photoresist on the surface of first mask layer, said photoresist figure is a bargraphs;
With said photoresist is mask, adopts plasma etching industrial to form first mask layer, and removes said photoresist.
5. method for making as claimed in claim 1 is characterized in that, said second bar paten comprises two bargraphss that are parallel to each other at least.
6. method for making as claimed in claim 1 is characterized in that, said second mask layer is a photoresist.
7. method for making as claimed in claim 6 is characterized in that, the method for said formation second mask layer comprises:
Surperficial spin coating photoresist in first mask layer and Semiconductor substrate;
Graphical to said resist exposure, form second bar paten perpendicular to first bar paten.
8. method for making as claimed in claim 5 is characterized in that, said composite mask is used for etching and forms interconnection structure, and said profile correction is decreased to said bargraphs width the width of active line in the interconnection structure.
9. method for making as claimed in claim 1 is characterized in that, in the said ion implantation technology, the bombardment direction of ion and the angle of the second mask layer sidewall are 7～15 degree.
10. method for making as claimed in claim 1 is characterized in that, the ionic species that said ion implantation technology adopts is Ar ion or P ion.
11. a composite mask is formed at semiconductor substrate surface, it is characterized in that, comprising:
Be positioned at first mask layer with square shape pattern of semiconductor substrate surface;
Be positioned at the first mask layer part surface and extend to second mask layer with bar paten of semiconductor substrate surface;
Be positioned at the wherein sclerosis sidewall of a side of said second mask layer, the corresponding side surface flush of first mask layer of said sclerosis sidewall and bottom.
12. composite mask as claimed in claim 11 is characterized in that, said bar paten comprises two bargraphss that are parallel to each other at least.
13. composite mask as claimed in claim 12 is characterized in that, is positioned at second mask layer bottom of said each bargraphs, comprises two square shape pattern first mask layers at least.
14. composite mask as claimed in claim 11 is characterized in that, said first mask layer is hard mask.
15. composite mask as claimed in claim 11 is characterized in that, said second mask layer is a photoresist.
16. composite mask as claimed in claim 11 is characterized in that, said composite mask is used for etching and forms interconnection structure, and the width of said bargraphs equals the width of active line in the interconnection structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010223464 CN102314075B (en) | 2010-07-02 | 2010-07-02 | Composite mask and manufacturing method thereof |
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| CN 201010223464 CN102314075B (en) | 2010-07-02 | 2010-07-02 | Composite mask and manufacturing method thereof |
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| CN102314075A true CN102314075A (en) | 2012-01-11 |
| CN102314075B CN102314075B (en) | 2013-03-27 |
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| CN 201010223464 Active CN102314075B (en) | 2010-07-02 | 2010-07-02 | Composite mask and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752169A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask patterns |
| CN105719999A (en) * | 2014-12-02 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Interconnection structure and forming method thereof |
| CN105824188A (en) * | 2016-04-29 | 2016-08-03 | 上海华力微电子有限公司 | Optical correction method for ion implanted layer layout |
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| US5126006A (en) * | 1990-10-30 | 1992-06-30 | International Business Machines Corp. | Plural level chip masking |
| JPH0844038A (en) * | 1994-08-03 | 1996-02-16 | Matsushita Electron Corp | Master mask forming device and production of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104752169A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask patterns |
| CN105719999A (en) * | 2014-12-02 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Interconnection structure and forming method thereof |
| CN105719999B (en) * | 2014-12-02 | 2019-03-12 | 中芯国际集成电路制造(上海)有限公司 | Interconnection structure and forming method thereof |
| CN105824188A (en) * | 2016-04-29 | 2016-08-03 | 上海华力微电子有限公司 | Optical correction method for ion implanted layer layout |
| CN105824188B (en) * | 2016-04-29 | 2019-08-30 | 上海华力微电子有限公司 | The optics modification method of ion implanted layer domain |
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| Publication number | Publication date |
|---|---|
| CN102314075B (en) | 2013-03-27 |
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