CN102314036A - Anti-ultraviolet electronic device and preparation method thereof - Google Patents
Anti-ultraviolet electronic device and preparation method thereof Download PDFInfo
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- CN102314036A CN102314036A CN2010102151559A CN201010215155A CN102314036A CN 102314036 A CN102314036 A CN 102314036A CN 2010102151559 A CN2010102151559 A CN 2010102151559A CN 201010215155 A CN201010215155 A CN 201010215155A CN 102314036 A CN102314036 A CN 102314036A
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Abstract
The invention provides an anti-ultraviolet electronic device and a preparation method thereof. The anti-ultraviolet electronic device comprises an integrated circuit crystal particle and an anti-ultraviolet layer, wherein the integrated circuit crystal particle is provided with an ultraviolet-erasable memory, and the anti-ultraviolet layer is formed in a way of covering the ultraviolet-erasable memory. By adopting the device, ultraviolet radiation can be blocked effectively, and the reliability of the memory can be improved. Moreover, the thickness of the intelligent wafer card is not increased, and the applicability of the memory can be improved.
Description
Technical field
The present invention is relevant for a kind of electronic installation, and is particularly to a kind of electronic installation and method for making thereof of ultraviolet light.
Background technology
In recent years, along with electronic product towards light, thin, short, little development, the size of semiconductor element also reduces gradually.In various electronic products, electric paper display (electronic paper) has advantages such as low power consumption, light, slimming and environmental protection, and that is therefore studied attractes attention.
If electric paper display (electronic paper display) is applied in the intelligent wafer card (smart card); User's Change Password at any time carries out the security protection operation; And be shown in the display on the wafer card, therefore, can improve the security of intelligent wafer card.
Yet; Because electric paper display control IC includes disposable programmable ROM (read-only memory) (one time programmable read only memory; OTP ROM); When OTPROM receives long UV-irradiation, can make that the data in the storer are eliminated (erase), thereby reduce its fiduciary level (reliability).
Therefore, industry is needed the electronic installation of a kind of ultraviolet light of development badly, and it can avoid the memory data in the electronic installation to be wiped free of.
Summary of the invention
The present invention provides a kind of electronic installation of ultraviolet light, comprising: an integrated circuit crystal grain (Die), and it has the storer that can be wiped by ultraviolet light; And a uvioresistant photosphere, be formed at and be covered on this storer that can be wiped by ultraviolet light.
The electronic installation of ultraviolet light of the present invention, this integrated circuit crystal grain comprises an electrophoretic display device (EPD) crystal grain; This can be comprised the disposable programmable ROM (read-only memory) by the storer that ultraviolet light is wiped.
The electronic installation of ultraviolet light of the present invention, the thickness of this uvioresistant photosphere are 8 to 100 microns.
The electronic installation of ultraviolet light of the present invention also comprises: a printed circuit board (PCB), and wherein this integrated circuit grain shaped is formed on this printed circuit board (PCB), and this ultraviolet light aspect is to this printed circuit board (PCB); And one first substrate and one second substrate, wherein this first substrate and this second substrate are oppositely arranged, and coat this printed circuit board (PCB) and this integrated circuit crystal grain.
The electronic installation of ultraviolet light of the present invention, the composition material of this first substrate and this second substrate comprises plastic cement material.
The present invention provides a kind of method for making of electronic installation of ultraviolet light in addition, may further comprise the steps: a wafer is provided; Form a plurality of integrated circuit crystal grain in this wafer, wherein said integrated circuit crystal grain has the storer that can be wiped by ultraviolet light separately; And form a uvioresistant photosphere on this storer that can be wiped by ultraviolet light.
The method for making of the electronic installation of ultraviolet light of the present invention, this integrated circuit crystal grain comprises an electrophoretic display device (EPD) crystal grain; This can be comprised the disposable programmable ROM (read-only memory) by the storer that ultraviolet light is wiped.
The method for making of the electronic installation of ultraviolet light of the present invention also comprises: cutting crystal wafer, to form a plurality of integrated circuit crystal grain with uvioresistant photosphere; Engage on said integrated circuit crystal grain to one printed circuit board (PCB) with uvioresistant photosphere; And said integrated circuit crystal grain and this printed circuit board (PCB) with uvioresistant photosphere be pressed between one first substrate and one second substrate.
The method for making of the electronic installation of ultraviolet light of the present invention, the method for this uvioresistant photosphere of this formation comprises ink jet printing or slot coated.
The method for making of the electronic installation of ultraviolet light of the present invention, this forms before this uvioresistant photosphere, also comprises a wafer sort step, and wherein this wafer sort step comprises a wafer sort, circuit detection or a wafer-level test.
The present invention also provides a kind of electronic installation of ultraviolet light, comprising: a printed circuit board (PCB) (PCB), and wherein this printed circuit board (PCB) has an active component; One integrated circuit crystal grain (Die) is formed on this printed circuit board (PCB), and wherein this integrated circuit crystal grain has the storer that can be wiped by ultraviolet light, and this printed circuit board (PCB) of faces towards surface that can be wiped by ultraviolet light of this storer that can be wiped by ultraviolet light; And one first substrate and one second substrate; Wherein this first substrate and this second substrate system is oppositely arranged and coats this printed circuit board (PCB) and this integrated circuit crystal grain; And this second substrate has a golden finger (gold finger), and wherein this golden finger electrically connects this active component; And a uvioresistant photosphere, be formed on this printed circuit board (PCB), on this first substrate or on this integrated circuit crystal grain, and correspond to the surface that this can be wiped by ultraviolet light.
The electronic installation of ultraviolet light of the present invention, this integrated circuit crystal grain comprises an electrophoretic display device (EPD) crystal grain; This can be comprised the disposable programmable ROM (read-only memory) by the storer that ultraviolet light is wiped.
The electronic installation of ultraviolet light of the present invention, the thickness of this uvioresistant photosphere are 8 to 100 microns.
The electronic installation of ultraviolet light of the present invention, the composition material of this first substrate and this second substrate comprises plastic cement material.
The present invention is the irradiation of block ultraviolet effectively, and then improves the fiduciary level of storer, and can not increase the thickness of intelligent wafer card, can improve the application of storer.
Description of drawings
Fig. 1 is a vertical view, in order to the ultraviolet light electronic installation of explanation first embodiment of the invention.
Fig. 2 is a sectional view, is applied to intelligent wafer card in order to the explanation first embodiment of the invention.
Fig. 3 is a process flow diagram, in order to the method for making of explanation first embodiment of the invention.
Fig. 4 A is a sectional view, in order to the ultraviolet light electronic installation of explanation second embodiment of the invention.
Fig. 4 B is a sectional view, in order to the ultraviolet light electronic installation of explanation third embodiment of the invention.
Embodiment
For letting above-mentioned and other purposes of the present invention, characteristic and the advantage can be more obviously understandable, the hereinafter spy enumerates preferred embodiment, and cooperates appended graphicly, elaborates as follows.
See also Fig. 1, the present invention provides a kind of electronic installation 100 of ultraviolet light, and it comprises an integrated circuit crystal grain (Die) 101, and the type of this integrated circuit crystal grain (Die) 101 can include but not limited to an electrophoretic display device (EPD) (EPD Electronic Paper) crystal grain.Integrated circuit crystal grain 101 has storer 103 (dotted line position), the uvioresistant photosphere 105 and a plurality of joint sheets (bonding pad) 107 that can be wiped by ultraviolet light.In a preferred embodiment, can be comprised disposable programmable ROM (read-only memory) (one timeprogrammable read only memory, OTP ROM) by the storer 103 that ultraviolet light is wiped.Wherein uvioresistant photosphere 105 is formed at and is covered on the surface of the storer 103 that can be wiped by ultraviolet light.Shown in figure; Uvioresistant photosphere 105 can fully be covered on the storer 103 that can be wiped by ultraviolet light; And its thickness is about 8 to 100 microns (μ m); Make integrated circuit crystal grain (Die) 101 have the ultraviolet light effect, with the stored data of the storer that can be wiped by ultraviolet light in the integrated circuit crystal grain (Die) 101 that adequately protects 103.The preferable area greater than the storer 103 that can be wiped by ultraviolet light of the scope that covers is more preferred from more than 50% more than 30%, yet as long as the scope of covering is greater than the area of the storer 103 that can be wiped by ultraviolet light, the size that is not limited among the figure to be drawn.
The material of uvioresistant photosphere 105 can comprise resin and inorganic particulate, and resin is epoxy resin (epoxy), vibrin (polyester resin), polyimide resin (polyimide resin) for example; Inorganic particulate is silicon dioxide (SiO for example
2), titania (TiO
2), aluminium oxide (Al
2O
3) or lime carbonate (CaCO
3).In a preferred embodiment, can use glass transparent insulating at a distance from ultraviolet nano paint or glass heat-insulating coating.
Joint sheet (bonding pad) 107 conducts electrically connect with the outside line (not shown); Wherein number, the size and shape of joint sheet (bonding pad) 107; Those skilled in the art can adjust according to practical application, are not limited to illustrate number, the size and shape drawn.
Be noted that here, in the prior art, wiped for avoiding memory data; Can stick black belt in the package casing of storer, yet black belt has certain thickness; Can't satisfy slimming product thickness standard; Good anti-ultraviolet ability also can't be provided, also can suffer the deterioration of its adhesive tape and influence, can not keep stable anti-uv-ray.And the present invention makes that through forming uvioresistant photosphere 105 on the storer 103 that can be wiped by ultraviolet light the data in the integrated circuit crystal grain (Die) 101 can not removed because of being exposed in the ultraviolet light.Moreover the thickness of uvioresistant photosphere 105 is approximate number micron (μ m) only, therefore, and when this integrated circuit crystal grain (Die) 101 being applied to also can not increase the thickness of intelligent wafer card in the intelligent wafer card (smart card).And the formed uvioresistant photosphere of good manufacture of semiconductor also can provide a stay in grade and serviceable life long anti-uv-ray.
See also Fig. 2, this figure shows that wherein the identical person with Fig. 1 of label represents similar elements, repeats no more at this with the sectional view of ultraviolet light electronic device applications in intelligent wafer card 201 of Fig. 1.
Comprise printed circuit board (PCB) (printed circuit board in the intelligence wafer card 201; PCB) 203, active component 205, first substrate 207, second substrate 209 and be formed at golden finger (the gold finger in second substrate 209; Be connecting finger) 211; Wherein integrated circuit crystal grain (Die) 101 is formed on the printed circuit board (PCB) 203 with active component 205, and has electric connection between the two.First substrate 207 and second substrate 209 are oppositely arranged, and coat printed circuit board (PCB) 203, integrated circuit crystal grain (Die) 101 and active component 205.
In addition; Be positioned at uvioresistant photosphere 105 on the integrated circuit crystal grain (Die) 101 towards printed circuit board (PCB) 203; That is with Flip Chip (flip-chip) or cover brilliant thin film technique (Chip On Flex or Chip On Film COF) engage (bonding) to printed circuit board (PCB) 203 with integrated circuit crystal grain (Die) 101.Have the wire connection structure (not shown) on the printed circuit board (PCB) 203 and be electrically connected in the active component 205, and active component 205 is electrically connected to the golden finger 211 in second substrate 209.
Above-mentioned active component 205 is that (integrated circuit, IC), for example intelligent wafer is controlled IC to the integrated circuit of controlling intelligent wafer card.Above-mentioned first substrate 207 and second substrate 209 comprise plastic cement material; Plastic cement material includes but not limited to; For example vibrin (polyester resin), polyacrylate resin (polymethacrylate; PMMA), polyimide resin (polyimide resin), polyolefin resin (polyolefinresin), polycarbonate resin (polycarbonate resin), polyurethane resin (polyurethane resin), Triafol T (triacetate cellulose; Or above-mentioned potpourri TAC).
In preferred embodiment, the overall dimensions of above-mentioned intelligent wafer card 201 include but not limited to, can meet the regulation of ISO/IEC 7810, the about 85.60mm of its integral width, the about 53.98mm of its whole height, the about 0.76mm of its integral thickness.Be noted that here the size of intelligent wafer card 201 is not limited to the above-mentioned scope of mentioning, as long as the intelligent wafer card that meets ISO/IEC 7810 is all in the scope that the present invention protected.
The present invention also comprises a kind of method for making of ultraviolet light storage arrangement, sees also Fig. 3, comprises step 301-309 in the method for making.Method for making originates in step 301, at first, a wafer is provided.Then, carry out step 303, form a plurality of integrated circuit crystal grain in wafer, wherein said integrated circuit crystal grain has the storer that can be wiped by ultraviolet light separately.Can be through existing lithographic process of this area personage (photolithography process) and etch process (etching process); In wafer, form a plurality of integrated circuit crystal grain; Wherein integrated circuit crystal grain comprise the disposable programmable ROM (read-only memory) (one timeprogrammable read only memory, OTPROM).
Afterwards, carry out step 305, form the uvioresistant photosphere on the storer that can be wiped by ultraviolet light, wherein the uvioresistant photosphere can fully be covered on the storer that can be wiped by ultraviolet light, and its thickness is about 8 to 100 μ m.The method that forms the uvioresistant photosphere comprises ink jet printing (ink jet printing) or slot coated (slot coating).It is noted that here the method that forms the uvioresistant photosphere is as limit, as long as can the uvioresistant photosphere be formed at the coating process (coatingprocess) on the storer that can be wiped by ultraviolet light, all in the scope that the present invention protected.
In addition; In a preferred embodiment; Before carry out step 305, can include but not limited to, carry out wafer sort (wafer test) step; For example wafer sort (ChipProbing test, CP test), circuit are surveyed (Circuit probing) or wafer-level test (wafer level testing).Its purpose be each the integrated circuit crystal grain (die) in the test wafer function, electrically connect whether correct.
Then, carry out step 307, cutting crystal wafer is to form a plurality of integrated circuit crystal grain with uvioresistant photosphere.Afterwards, carry out the encapsulation procedure of step 309, can the integrated circuit crystal grain that cut down according to the demand of practical application, be carried out encapsulation procedure.
In an embodiment, as shown in Figure 2, can above-mentioned integrated circuit crystal grain 101 with uvioresistant photosphere 105 be engaged on the printed circuit board (PCB) (PCB) 203, wherein uvioresistant photosphere 105 is towards printed circuit board (PCB) 203.Afterwards, again integrated circuit crystal grain 101 and printed circuit board (PCB) 203 are pressed between first substrate 207 and second substrate 209, to form intelligent wafer card.Storer in this intelligent wafer card can make the data in the storer do not wiped by ultraviolet light owing to receive the protection of uvioresistant photosphere, improves the fiduciary level (reliability) of intelligent wafer card.
The present invention provides one second embodiment in addition; See also Fig. 4 A; Ultraviolet light electronic installation 400 comprises: integrated circuit crystal grain 401 and printed circuit board (PCB) 403 are formed between first substrate 405 and second substrate 407; Wherein integrated circuit crystal grain 401 comprises the storer (not shown) that can be wiped by ultraviolet light, and printed circuit board (PCB) 403 comprises printed circuit board (PCB) main body 403a and uvioresistant photosphere 403b.In a preferred embodiment, integrated circuit crystal grain 101 comprises an electrophoretic display device (EPD) (EPD Electronic Paper) crystal grain, and can be comprised disposable programmable ROM (read-only memory) (one time programmableread only memory, OTP ROM) by the storer that ultraviolet light is wiped.
Above-mentioned integrated circuit crystal grain 401 is formed on the printed circuit board (PCB) 403 with wire connection structure (not shown) and active component 409; Wherein can be had the surface (surface down) that can be wiped by ultraviolet light by the storer (not shown) that ultraviolet light is wiped, and the faces towards surface printed circuit board (PCB) 403 that can be wiped by ultraviolet light.First substrate 405 and second substrate 407 are oppositely arranged and coat printed circuit board (PCB) 403 and integrated circuit crystal grain (die) 401.In addition, second substrate 407 has golden finger (gold finger) 411, and wherein golden finger 411 is electrically connected to active component 409 and wire connection structure (not shown).
Coating uvioresistant photosphere 403b on the printed circuit board (PCB) 403 of second embodiment, and uvioresistant photosphere 403b corresponds to the surperficial (not shown) that can be wiped by ultraviolet light, makes printed circuit board (PCB) 403 have the effect of ultraviolet light.The method that forms uvioresistant photosphere 403b comprises ink jet printing (ink jet printing) or slot coated methods such as (slot coating).
Be noted that here in a preferred embodiment, the spreading area of uvioresistant photosphere 403b equals the area of printed circuit board (PCB) main body 403a, shown in Fig. 4 A.In another embodiment, the spreading area of uvioresistant photosphere 403b is less than printed circuit board (PCB) main body 403a, and its area can be adjusted by the surface area that ultraviolet light is wiped according to storer 401.And the position of uvioresistant photosphere 403b coating corresponds to and can be got final product by the surface that ultraviolet light is wiped.In addition, first substrate 405 of second embodiment, second substrate 407, active component 409 are all identical with first embodiment with uvioresistant photosphere 403b, repeat no more at this.
See also Fig. 4 B, the present invention provides one the 3rd embodiment in addition.Represent similar elements with the identical person of Fig. 4 A label among Fig. 4 B; Wherein the difference of two figure is that the uvioresistant photosphere 413 among Fig. 4 B is formed in first substrate 405; Wherein uvioresistant photosphere 413 corresponds to the surperficial (not shown) that can be wiped by ultraviolet light in the integrated circuit crystal grain (die) 401; Therefore, first substrate 405 has the effect of ultraviolet light, can avoid the data in the storer to be wiped free of.
Learn by the foregoing description; Uvioresistant photosphere 105 on being formed directly in the storer 103 that can be wiped by ultraviolet light (Fig. 1); Also can be formed at (like Fig. 4 A) on the printed circuit board (PCB); Or be formed at (like Fig. 4 B) on first substrate, with the irradiation of effective block ultraviolet, and then the fiduciary level of raising storer.In addition; Because the thickness of uvioresistant photosphere is approximate number micron (μ m) only; Therefore, be applied in the intelligent wafer card when disposable programmable ROM (read-only memory) (onetime programmable read only memory, OTP ROM); Also can not increase the thickness of intelligent wafer card, can improve the application of storer.
The above is merely preferred embodiment of the present invention; So it is not in order to limit scope of the present invention; Any personnel that are familiar with this technology; Do not breaking away from the spirit and scope of the present invention, can do further improvement and variation on this basis, so the scope that claims were defined that protection scope of the present invention is worked as with the application is as the criterion.
The simple declaration of symbol is following in the accompanying drawing:
100: the electronic installation of ultraviolet light
101: integrated circuit crystal grain (Die)
103: the storer that can be wiped by ultraviolet light
105: the uvioresistant photosphere
107: joint sheet
201: intelligent wafer card
203: printed circuit board (PCB)
205: active component
207: the first substrates
209: the second substrates
211: golden finger
301: a wafer is provided
303: form a plurality of integrated circuit crystal grain in wafer, wherein integrated circuit crystal grain has the storer that can be wiped by ultraviolet light separately
305: form the uvioresistant photosphere on the storer that can be wiped by ultraviolet light
307: cutting crystal wafer, to form a plurality of integrated circuit crystal grain with uvioresistant photosphere
309: encapsulation procedure
400: the ultraviolet light storage arrangement
401: integrated circuit crystal grain (die)
403: printed circuit board (PCB) (PCB)
403a: printed circuit board (PCB) main body
403b: uvioresistant photosphere
405: the first substrates
407: the second substrates
409: active component
411: golden finger
413: the uvioresistant photosphere.
Claims (14)
1. the electronic installation of a ultraviolet light is characterized in that, comprising:
One integrated circuit crystal grain, it has the storer that can be wiped by ultraviolet light; And
One uvioresistant photosphere is formed at and is covered on this storer that can be wiped by ultraviolet light.
2. the electronic installation of ultraviolet light according to claim 1 is characterized in that, this integrated circuit crystal grain comprises an electrophoretic display device (EPD) crystal grain; This can be comprised the disposable programmable ROM (read-only memory) by the storer that ultraviolet light is wiped.
3. the electronic installation of ultraviolet light according to claim 1 is characterized in that, the thickness of this uvioresistant photosphere is 8 to 100 microns.
4. the electronic installation of ultraviolet light according to claim 1 is characterized in that, also comprises:
One printed circuit board (PCB), wherein this integrated circuit grain shaped is formed on this printed circuit board (PCB), and this ultraviolet light aspect is to this printed circuit board (PCB); And
One first substrate and one second substrate, wherein this first substrate and this second substrate are oppositely arranged, and coat this printed circuit board (PCB) and this integrated circuit crystal grain.
5. the electronic installation of ultraviolet light according to claim 4 is characterized in that, the composition material of this first substrate and this second substrate comprises plastic cement material.
6. the method for making of the electronic installation of a ultraviolet light is characterized in that, may further comprise the steps:
One wafer is provided;
Form a plurality of integrated circuit crystal grain in this wafer, wherein said integrated circuit crystal grain has the storer that can be wiped by ultraviolet light separately; And
Form a uvioresistant photosphere on this storer that can be wiped by ultraviolet light.
7. the method for making of the electronic installation of ultraviolet light according to claim 6 is characterized in that, this integrated circuit crystal grain comprises an electrophoretic display device (EPD) crystal grain; This can be comprised the disposable programmable ROM (read-only memory) by the storer that ultraviolet light is wiped.
8. the method for making of the electronic installation of ultraviolet light according to claim 6 is characterized in that, also comprises:
Cutting crystal wafer is to form a plurality of integrated circuit crystal grain with uvioresistant photosphere;
Engage on said integrated circuit crystal grain to one printed circuit board (PCB) with uvioresistant photosphere; And
Said integrated circuit crystal grain and this printed circuit board (PCB) with uvioresistant photosphere is pressed between one first substrate and one second substrate.
9. the method for making of the electronic installation of ultraviolet light according to claim 6 is characterized in that, the method for this uvioresistant photosphere of this formation comprises ink jet printing or slot coated.
10. the method for making of the electronic installation of ultraviolet light according to claim 6; It is characterized in that; This forms before this uvioresistant photosphere, also comprises a wafer sort step, and wherein this wafer sort step comprises a wafer sort, circuit detection or a wafer-level test.
11. the electronic installation of a ultraviolet light is characterized in that, comprising:
One printed circuit board (PCB), wherein this printed circuit board (PCB) has an active component;
One integrated circuit crystal grain is formed on this printed circuit board (PCB), and wherein this integrated circuit crystal grain has the storer that can be wiped by ultraviolet light, and this printed circuit board (PCB) of faces towards surface that can be wiped by ultraviolet light of this storer that can be wiped by ultraviolet light; And
One first substrate and one second substrate, wherein this first substrate and this second substrate are oppositely arranged and coat this printed circuit board (PCB) and this integrated circuit crystal grain, and this second substrate has a golden finger, and wherein this golden finger electrically connects this active component; And
One uvioresistant photosphere is formed on this printed circuit board (PCB), on this first substrate or on this integrated circuit crystal grain, and corresponds to the surface that this can be wiped by ultraviolet light.
12. the electronic installation of ultraviolet light according to claim 11 is characterized in that, this integrated circuit crystal grain comprises an electrophoretic display device (EPD) crystal grain; This can be comprised the disposable programmable ROM (read-only memory) by the storer that ultraviolet light is wiped.
13. the electronic installation of ultraviolet light according to claim 11 is characterized in that, the thickness of this uvioresistant photosphere is 8 to 100 microns.
14. the electronic installation of ultraviolet light according to claim 11 is characterized in that, the composition material of this first substrate and this second substrate comprises plastic cement material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102151559A CN102314036A (en) | 2010-06-29 | 2010-06-29 | Anti-ultraviolet electronic device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102151559A CN102314036A (en) | 2010-06-29 | 2010-06-29 | Anti-ultraviolet electronic device and preparation method thereof |
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| CN102314036A true CN102314036A (en) | 2012-01-11 |
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| CN2010102151559A Pending CN102314036A (en) | 2010-06-29 | 2010-06-29 | Anti-ultraviolet electronic device and preparation method thereof |
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|---|---|---|---|---|
| US4291326A (en) * | 1978-11-27 | 1981-09-22 | Fujitsu Limited | Semiconductor device |
| US4758984A (en) * | 1985-12-18 | 1988-07-19 | Fujitsu Limited | Semiconductor memory device including read only memory element for storing fixed information |
| US5235541A (en) * | 1989-12-14 | 1993-08-10 | Sgs-Thomson Microelectronics, S.A. | Integrated circuit entirely protected against ultraviolet rays |
| CN1198592A (en) * | 1997-04-23 | 1998-11-11 | 日本电气株式会社 | Semiconductor device |
| CN1662819A (en) * | 2002-06-19 | 2005-08-31 | 佛姆费克托公司 | Test method for yielding a known good die |
| CN101079288A (en) * | 2006-05-23 | 2007-11-28 | 精碟科技股份有限公司 | Optical information storage media |
| CN101213565A (en) * | 2005-06-30 | 2008-07-02 | 联合印刷有限责任公司 | Security document comprising an integrated circuit and integrated display element |
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2010
- 2010-06-29 CN CN2010102151559A patent/CN102314036A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4291326A (en) * | 1978-11-27 | 1981-09-22 | Fujitsu Limited | Semiconductor device |
| US4758984A (en) * | 1985-12-18 | 1988-07-19 | Fujitsu Limited | Semiconductor memory device including read only memory element for storing fixed information |
| US5235541A (en) * | 1989-12-14 | 1993-08-10 | Sgs-Thomson Microelectronics, S.A. | Integrated circuit entirely protected against ultraviolet rays |
| CN1198592A (en) * | 1997-04-23 | 1998-11-11 | 日本电气株式会社 | Semiconductor device |
| CN1662819A (en) * | 2002-06-19 | 2005-08-31 | 佛姆费克托公司 | Test method for yielding a known good die |
| CN101213565A (en) * | 2005-06-30 | 2008-07-02 | 联合印刷有限责任公司 | Security document comprising an integrated circuit and integrated display element |
| CN101079288A (en) * | 2006-05-23 | 2007-11-28 | 精碟科技股份有限公司 | Optical information storage media |
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Application publication date: 20120111 |