CN102305256B - Metal micrometer/nanometer spring as well as preparation method and application thereof - Google Patents
Metal micrometer/nanometer spring as well as preparation method and application thereof Download PDFInfo
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- CN102305256B CN102305256B CN 201110262186 CN201110262186A CN102305256B CN 102305256 B CN102305256 B CN 102305256B CN 201110262186 CN201110262186 CN 201110262186 CN 201110262186 A CN201110262186 A CN 201110262186A CN 102305256 B CN102305256 B CN 102305256B
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Abstract
The invention belongs to the technical field of micro-nano devices, and in particular relates to a metal micrometer/nanometer spring as well as a preparation method and an application thereof. The preparation method comprises the following steps: preparing a substrate provided with a sacrificial layer; depositing a metal strip with internal stress and anisotropic Young's modulus on the sacrificial layer; and selectively removing parts of the sacrificial layer between a metal strip and the substrate, and releasing the metal strip, thereby curling the metal strip into the metal nanometer/micrometer spring. The metal nanometer/micrometer spring can be used for measuring a flow sensor, specifically the substrate with the metal micrometer/nanometer spring is fixed in a fluid channel; and when the fluid passes through the channel, the spring achieves the balance state, and the rate of flow of fluid is measured by measuring the spring elongation.
Description
Technical field
The invention belongs to the micro-nano device technical field, be specifically related to a kind of metal micrometer/nanometer spring and its preparation method and application.
Background technique
In recent years, micro-nano device, such as pipe, line and the spring etc. of micro/nano-scale owing to having potential application foreground in fields such as drug delivery, sensor, optics and Chu Qing, thereby paid close attention to widely.In all three-dimensional micro-nano devices, spring is because its special pattern is subject to studying more widely.The helical type structure of the uniqueness that possesses due to the micrometer/nanometer spring and piezoelectric property, mechanical property and the electric property that material itself possesses, there is potential using value in this micrometer/nanometer spring in fields such as micro-nano Mechatronic Systems (N/MEMS), drug delivery and cell operations.Because nano thin-film has high specific surface area and the easy surface of modification, utilize the curling micrometer/nanometer spring that obtains of nano thin-film also having certain application prospect aspect biology and chemical sensor.
The people such as Pu XianGao utilized the solids-gases process successfully to prepare in 2006 to have hyperelastic ZnO nano spring, the people such as Cao Chuanbao to utilize the chemical vapor deposition method to prepare in 2007 to have hyperelastic Si
3N
4The micron spring, the people such as Li Zhang utilize curling method with semiconductor duplicature of internal stress successfully to prepare the micron spring.In the method that the people such as Li Zhang adopt, the internal stress of duplicature is to be caused by the lattice mismatch between different layers, and curling direction is determined by Young's modulus, and the Young's modulus in semiconductive thin film has significant anisotropy.Their result shows the diameter of spring by thickness and the decision of lattice mismatch degree of film, and curl direction is the direction along the Young's modulus minimum.
At present, utilizing the micrometer/nanometer spring of curling nano thin-film preparation is all generally the semiconductor epitaxial material, such as InGaAs/GaAs duplicature and SiGe/Si duplicature, due to limited and epitaxy technology, also there is no so far the research report about the micrometer/nanometer spring preparation of pure metal.And compare with semi-conducting material, metallic material has better mechanics and electric property, so metal micrometer/nanometer spring is more suitable for the application in micro-nano device.
Summary of the invention
The object of the present invention is to provide good metal micrometer/nanometer spring of a kind of mechanics and electric property and its preparation method and application.
The preparation method of metal micrometer/nanometer spring provided by the invention comprises following step:
(1) prepare a substrate, have sacrifice layer on substrate;
(2) metal bar that deposition has internal stress and anisotropic Young's modulus on sacrifice layer;
(3) optionally remove partial sacrifice layer between metal bar and substrate, discharge metal bar, thus the curling metal nano/micron spring that becomes of metal bar.
In the present invention, step (2) deposits the metal bar with internal stress and anisotropic Young's modulus on sacrifice layer, comprise following two steps, at first utilize physics or Low Pressure Chemical Vapor Deposition to deposit the layer of metal film on sacrifice layer, then utilize the method for photoetching with film pattern, be called metal bar.Wherein, the method for physical vapor deposition comprises sputter, thermal evaporation and electron beam evaporation etc.
In the present invention, the described physical vaporous deposition that utilizes deposits the layer of metal film on sacrifice layer, can be by controlling deposition parameter, such as deposition rate, underlayer temperature, substrate tilting angle and deposition pressure etc., obtain having poor in direction of growth internal stress gradient and the metallic thin film anisotropy Young's modulus.
In the present invention, the geometric parameter of described metal micrometer/nanometer spring, as diameter, helix angle and spiral shell spacing etc. are determined according to designing requirement.
In the present invention, the one-component metals (metal book film) such as the material of metal micrometer/nanometer spring (the metal book film of deposition) can gold, titanium, chromium or aluminium, can be also the alloy (alloy book film) of these metals, can be also the multiple layer metal (multiple layer metal book film) of these metals.
In the present invention, described sacrifice layer can be the SiO2 layer.
Metal micrometer/nanometer spring provided by the invention can be used for carrying out in flow transducer flow rate to be measured, specific as follows:
Flow transducer comprises a fluid passage, will be fixed on inside, fluid passage with the substrate of metal micrometer/nanometer spring.When this passage, spring is subject to the viscous force of flow of fluid and substrate to the pulling force of spring, is in state of equilibrium when fluid.At this moment, equate on viscous force and the pulling force numerical value of substrate to spring.Viscosity factor and the flow velocity of viscous force and fluid self are relevant, and substrate can represent by the spring elongation the pulling force of spring.In general, for the same fluid, its viscosity factor immobilizes, and the elongation of spring increases along with the rising of the flow velocity of fluid, and therefore, we can measure by the elongation of measuring spring the flow velocity of fluid.And the elongation of spring obtains by optical microscope measuring.
Description of drawings
Fig. 1 is the flow chart that the present invention prepares metal micrometer/nanometer spring.Wherein, (a) on the Si substrate, one deck SiO is arranged
2As sacrifice layer; (b) expression adopts the method for electron beam evaporation at SiO
2On sacrifice layer, deposition a layer thickness is the Au film of 40 nm; (c) expression utilizes hydrofluoric acid with SiO
2Sacrifice layer is removed; (d) form at last Au micrometer/nanometer spring.
Fig. 2 obtains the Au film and has anisotropic Young's modulus diagram for by inclination substrate angle deposit film.
Fig. 3 is for adopting the schematic diagram of metal micrometer/nanometer spring test fluid flow flow velocity.Wherein, (a) be fluid when static, spring is in original state, and when (b) flowing through from left to right with certain speed for fluid, spring is subject to the viscous force effect and the state that extends.
Number in the figure: 1. substrate; 2. sacrifice layer; 3. metal layer; 4. metal micrometer/nanometer spring; 5. the angle that becomes with the incident direction of evaporation atom gas of the Normal direction of substrate; 6. evaporation source; 7. substrate; 8. fluid passage.
Embodiment
Below the present invention is further described by example.
Below in conjunction with accompanying drawing and instantiation, invention preparation metal micrometer/nanometer spring is described further.
Fig. 1 utilizes method in the present invention to prepare the schematic diagram of golden micrometer/nanometer spring.Wherein, (a) on Si substrate 1, one deck SiO is arranged
2As sacrifice layer 2.(b) expression adopts the method for electron beam evaporation at SiO
2On sacrifice layer, deposition a layer thickness is the Au metal layer 3 of 40 nm.Wherein in deposition process, by changing deposition parameter, as deposition rate, underlayer temperature and deposition pressure etc., can prepare the Au film with internal stress; The incident direction of the Normal direction of substrate and evaporation source 6 evaporation atom gas is angled
5, as shown in Figure 2, because there is shadoweffect in inclination substrate angle deposit film, deposits by this method the Au film that obtains and have anisotropic Young's modulus.Then utilize the method for photoetching, the Au film is carried out graphically obtaining metal bar, as shown in (c).At last, utilize hydrofluoric acid with SiO
2Sacrifice layer is removed, and comes thereby the Au metal bar is broken away from from substrate, forms Au metal micrometer/nanometer spring 4, as shown in (d).
Fig. 3 is the schematic diagram based on metal micrometer/nanometer spring test fluid flow flow velocity, and the substrate 7 with metal micrometer/nanometer spring is fixed on 8 inside, fluid passage, and wherein an end of metal micrometer/nanometer spring 4 is fixed on substrate 7.Wherein, (a) expression, when fluid was static, spring was in original state, was not stretched, and this moment, length was
l 0(b) expression, when fluid flow through with certain speed, spring received the viscous force effect and extends, the length of this moment is
lThe elongation of spring
xEqual
l-
l 0, this numerical value is determined by viscosity factor and the flow velocity of fluid.And when adopting the same fluid, viscosity factor remains unchanged, therefore
xValue only is directly proportional to flow velocity.Thereby according to above analysis, namely can measure by the elongation of measuring spring the flow velocity of fluid.
Claims (6)
1. the preparation method of a metal micrometer/nanometer spring is characterized in that concrete steps are:
(1) prepare a substrate, have sacrifice layer on substrate;
(2) metal bar that deposition has internal stress and anisotropic Young's modulus on sacrifice layer;
(3) optionally remove partial sacrifice layer between metal bar and substrate, discharge metal bar, thus the curling metal nano/micron spring that becomes of metal bar;
Step (2) deposits the metal bar with internal stress and anisotropic Young's modulus on sacrifice layer, comprise following two steps, at first utilize physics or Low Pressure Chemical Vapor Deposition to deposit the layer of metal film on sacrifice layer, then utilize the method for photoetching with metal thin-film pattern, obtain metal bar.
2. preparation method according to claim 1, it is characterized in that the described physical vaporous deposition that utilizes deposits the layer of metal film on sacrifice layer, by controlling deposition parameter, comprise deposition rate, underlayer temperature, substrate tilting angle or deposition pressure, obtain having poor in direction of growth internal stress gradient and the metallic thin film anisotropy Young's modulus.
3. preparation method according to claim 1 and 2 is characterized in that the material of described metal is gold, titanium, chromium or aluminium one-component metal, or several alloy in these metals, or several multiple layer metal in these metals.
4. preparation method according to claim 1 and 2, is characterized in that described sacrifice layer is SiO
2Layer.
5. the metal micrometer/nanometer spring for preparing of preparation method as described in one of claim 1-4.
6. metal micrometer/nanometer spring as claimed in claim 5 is measured the application of rate of flow of fluid and flow in flow transducer.
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| CN102305256B true CN102305256B (en) | 2013-06-12 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102539379B (en) * | 2011-12-22 | 2014-01-08 | 复旦大学 | Optical fluid detection device based on inorganic oxide thin film and preparation method thereof |
| CN103193196B (en) * | 2013-03-20 | 2015-09-30 | 北京大学 | A kind of assemble method of three-dimensional micro-nano structure |
| CN103663363A (en) * | 2013-12-05 | 2014-03-26 | 浙江大学 | Disordered alloy micro-spring, and preparation method and lighthouse thereof |
| CN104020152B (en) * | 2014-06-02 | 2017-04-05 | 复旦大学 | A kind of sandwich structure micron tube and its preparation method and application |
| CN104555908A (en) * | 2014-12-04 | 2015-04-29 | 复旦大学 | Machining method of micro-spring |
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| US6534413B1 (en) * | 2000-10-27 | 2003-03-18 | Air Products And Chemicals, Inc. | Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch |
| JP2003218292A (en) * | 2001-10-12 | 2003-07-31 | Xerox Corp | Spring structure with stress-balancing layer |
| US6866255B2 (en) * | 2002-04-12 | 2005-03-15 | Xerox Corporation | Sputtered spring films with low stress anisotropy |
| CN101224868A (en) * | 2008-01-30 | 2008-07-23 | 湘潭大学 | Method for making optical spring based on single polar semiconductor nano-strip |
| CN101343033A (en) * | 2008-08-28 | 2009-01-14 | 上海交通大学 | Method for manufacturing miniature spring mechanical sensor for film performance test |
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Patent Citations (5)
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|---|---|---|---|---|
| US6534413B1 (en) * | 2000-10-27 | 2003-03-18 | Air Products And Chemicals, Inc. | Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch |
| JP2003218292A (en) * | 2001-10-12 | 2003-07-31 | Xerox Corp | Spring structure with stress-balancing layer |
| US6866255B2 (en) * | 2002-04-12 | 2005-03-15 | Xerox Corporation | Sputtered spring films with low stress anisotropy |
| CN101224868A (en) * | 2008-01-30 | 2008-07-23 | 湘潭大学 | Method for making optical spring based on single polar semiconductor nano-strip |
| CN101343033A (en) * | 2008-08-28 | 2009-01-14 | 上海交通大学 | Method for manufacturing miniature spring mechanical sensor for film performance test |
Non-Patent Citations (4)
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| 一种新型微机械硅弹簧的设计与制作;李文军等;《微细加工技术》;20011230(第04期);全文 * |
| 平面微弹簧的模拟、加工制备和力学性能表征研究;陈迪等;《微纳电子技术》;20030825(第7/8期);全文 * |
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