CN102295894B - Circuit connecting adhesive film and use thereof, structure body, manufacturing method and connection method thereof - Google Patents

Circuit connecting adhesive film and use thereof, structure body, manufacturing method and connection method thereof Download PDF

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Publication number
CN102295894B
CN102295894B CN201110162373.5A CN201110162373A CN102295894B CN 102295894 B CN102295894 B CN 102295894B CN 201110162373 A CN201110162373 A CN 201110162373A CN 102295894 B CN102295894 B CN 102295894B
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Prior art keywords
circuit
epoxy resin
resin
thickness
weight
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CN102295894A (en
Inventor
杜晓黎
佐藤和也
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Lishennoco Co ltd
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Hitachi Chemical Co Ltd
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Priority claimed from JP2011111532A external-priority patent/JP5485222B2/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Abstract

The invention relates to a circuit connecting adhesive film and the use thereof, a structure body and the manufacturing and connection method thereof. The circuit connecting adhesive film includes a conductive adhesive layer containing an adhesive composition and conductive particles, and an insulating adhesive layer containing an adhesive composition but not conductive particles. The adhesive composition in the conductive adhesive layer contains (a) film-forming materials, (b) epoxy resin with the epoxy equivalent thereof to be 200-3000, and (c) latent curing agent.

Description

Circuit connecting adhesive film and purposes, structure and manufacture method and method of attachment
Technical field
The present invention relates to a kind of circuit connecting adhesive film and uses thereof, the method for attachment of circuit connection structure and manufacture method and circuit block.
Background technology
All the time, in order to by semiconductor element and the flat-panel monitors (FPD) such as substrate, especially liquid crystal with glass substrate be connected, use the heat-curable adhesive film solidified by heating always.
As heat cured adhesive film, widely use containing the material as the epoxy resin of thermosetting resin, epoxy resin is when solidifying by heating, define the polymkeric substance that physical strength is high, therefore semiconductor element is firmly connected by this adhesive film with liquid-crystal display, can obtain the electrical means that reliability is high.In recent years, contain compared with epoxy resin towards use gradually, the adhesive film development of the acrylate that can solidify at lower temperatures.
But, when using adhesive film to connect glass substrate and semiconductor element, when caking agent film, being heated by thermal conduction, creating thermal expansion, therefore there is the situation that semiconductor element stretches.Therefore, when entirety being cooled after heating terminates, there is the semiconductor element stretched and shrink, along with this contraction, the glass substrate forming FPD creates the situation of the distortion such as warpage.When producing distortion on the glass substrate, the indicating meter display image being positioned at crushed element creates confusion.
Up to now, in order to suppress the distortion such as warpage, there will be a known various method.Such as, report and made film between the method (Japanese Unexamined Patent Publication 2006-229124 publication) heating and carry out between pressurizing tool and semiconductor element to connect, and after heating and pressurization operation, carry out the method (Japanese Unexamined Patent Publication 2004-200230 publication) heated.
In addition, recently also known a kind of in adhesive film use can carry out the method (Japanese Unexamined Patent Publication 2004-277573 publication, Japanese Patent No. 3477367 publication) of the material of stress mitigation.
Summary of the invention
But, although use the material that can carry out stress mitigation can suppress the distortion of glass substrate, have the problem that connection reliability declines.In addition, the film-forming properties had when forming adhesive film declines, and is difficult to the stable situation obtaining adhesive film.In addition, particularly along with the lower thickness of glass substrate and semiconductor element, have the tendency easily significantly producing warpage (distortion of glass substrate).
Therefore, even if the object of this invention is to provide a kind of when for connecting the thin glass substrate of Thickness Ratio circuit substrate in the past and semiconductor element, also excellent connection reliability can be maintained, the distortion of glass substrate can be suppressed simultaneously, and circuit connecting adhesive film that film-forming properties is also excellent and uses thereof, and use the circuit connection structure of this adhesive film and the method for attachment of manufacture method and circuit block thereof.
The present inventor has carried out active research to solve the problem, found that circuit block produces distortion is that connection reliability declines in addition is owing to creating the too low part of modulus of elasticity in circuit connecting adhesive film after mounting because the internal stress of the circuit connecting adhesive film of (after solidification) is too high after installing.Also known, particularly when modulus of elasticity local is too low, relative electrode is difficult to keep the flat of conducting particles each other, therefore has the tendency that connection reliability declines.
The present inventor has done further research based on this opinion, finds, by using the epoxy resin with regulation epoxy equivalent (weight) in circuit connecting adhesive film, can guarantee high connecting reliability, and can suppress the distortion of base material, complete the present invention thus.
That is, the invention provides a kind of circuit connecting adhesive film, it possesses the conductive adhesive layer containing adhesive composite and conducting particles, with the insulativity bond layer containing adhesive composite but not containing conducting particles, wherein, the adhesive composite contained in insulativity bond layer comprises (a) film forming material, b () epoxy equivalent (weight) is epoxy resin and (c) potentiality solidifying agent of 200 ~ 3000, and this circuit connecting adhesive film is for making the 1st circuit block defining the 1st circuit electrode on the interarea that thickness is the 1st circuit substrate of below 0.3mm, with at thickness be below 0.3mm the 2nd circuit substrate interarea on define the 2nd circuit block of the 2nd circuit electrode, make to be electrically connected under the 1st circuit electrode state relative with the 2nd circuit electrode.
If such circuit connecting adhesive film, then owing to using (b) epoxy resin with regulation epoxy equivalent (weight) (unit is g/eq.) in the adhesive composite in insulativity bond layer, therefore can have good elasticity modulus, and realize excellent thermotolerance and cementability simultaneously.Thus, even if for when to possess thickness be the circuit block connection each other of the circuit substrate of below 0.3mm, the distortion of circuit block not only can be suppressed, can also obtain good connection reliability.In addition, because the adhesive composite in insulativity bond layer comprises (b) epoxy resin and (c) potentiality solidifying agent with regulation epoxy equivalent (weight), and comprise (a) film forming material simultaneously, therefore not only can realize excellent thermotolerance and cementability, but also excellent film-forming properties can be given.
In addition, because circuit connecting adhesive film possesses conductive adhesive layer and insulativity bond layer, this is two-layer, and therefore relative electrode easily catches conducting particles each other, can improve connection reliability.Thus, good connection reliability can be obtained.
For circuit connecting adhesive film of the present invention, its conductive adhesive layer and/or insulativity bond layer can contain (d) insulativity particle further.Thus, more excellent connection reliability can be maintained.
The present invention also provides a kind of circuit connection structure, it possess on the interarea that thickness is the 1st circuit substrate of below 0.3mm, define the 1st circuit electrode the 1st circuit block, at thickness be below 0.3mm the 2nd circuit substrate interarea on define the 2nd circuit electrode, and be configured to make the 2nd circuit electrode relative with the 1st circuit electrode, and the 2nd circuit block that the 2nd circuit electrode is electrically connected with the 1st circuit electrode and the connection section between the 1st circuit block and the 2nd circuit block, and connection section is the cured article of circuit connecting adhesive film of the present invention.
If such circuit connection structure, then because the cured article of connection section by circuit connecting adhesive film of the present invention is formed, therefore the internal stress in circuit connection structure can be suppressed for lower, and modulus of elasticity can be suppressed to cross the generation of lower part.Therefore, the distortion of circuit block can be suppressed, excellent connection reliability can be realized simultaneously.
The present invention further provides a kind of manufacture method of circuit connection structure, it comprise make the circuit connecting adhesive film of the invention described above between possess the 1st circuit block that defines the 1st circuit electrode on the interarea that thickness is the 1st circuit substrate of below 0.3mm and at thickness be the interarea of the 2nd circuit substrate of below 0.3mm defines the 2nd circuit electrode a pair circuit block of the 2nd circuit block between, obtain the operation of multilayer body, layer body carries out heating and pressurizeing through the stack, circuit connecting adhesive film is solidified, thus formed between a pair circuit block, with the operation of bonding a pair circuit block of the mode connection section each other of the 1st circuit electrode and the electrical connection of the 2nd circuit electrode that make relative configuration.
If such manufacture method, then can manufacture the distortion that can suppress circuit block, the circuit connection structure of excellent connection reliability can be realized simultaneously.
In addition, the invention provides a kind of method of attachment of circuit block, wherein, under the state making the 1st circuit electrode and the 2nd circuit electrode relative configuration, to at thickness be below 0.3mm the 1st circuit substrate interarea on define the 1st circuit block of the 1st circuit electrode, at thickness be the 2nd circuit substrate of below 0.3mm interarea on define the 2nd circuit block of the 2nd circuit electrode, and the circuit connecting adhesive film of the present invention be configured between the 1st circuit block and the 2nd circuit block carries out heating and pressurizeing, thus make the 1st circuit electrode and the electrical connection of the 2nd circuit electrode.
If the method for attachment of such circuit block, then owing to employing the cured article of circuit connecting adhesive film of the present invention in the connection of circuit block, although therefore the internal stress in cured article is suppressed, for lower, also fully to guarantee the electroconductibility between comparative electrode.Therefore, it is possible to form the distortion that can suppress circuit block, and there is the circuit connection structure of good connection reliability simultaneously.
Further, the invention provides the purposes that a kind of adhesive film connects for circuit, this adhesive film possesses the conductive adhesive layer containing adhesive composite and conducting particles, with the insulativity bond layer containing adhesive composite but not containing conducting particles, wherein, the adhesive composite contained in insulativity bond layer comprises (a) film forming material, b () epoxy equivalent (weight) is epoxy resin and (c) potentiality solidifying agent of 200 ~ 3000, and this adhesive film is for making the 1st circuit block defining the 1st circuit electrode on the interarea that thickness is the 1st circuit substrate of below 0.3mm, with at thickness be below 0.3mm the 2nd circuit substrate interarea on define the 2nd circuit block of the 2nd circuit electrode, make to be electrically connected under the 1st circuit electrode state relative with the 2nd circuit electrode.
Connect by this adhesive film being used for circuit, even if then for when to possess thickness be the circuit block connection each other of the circuit substrate of below 0.3mm, the distortion of circuit block also can be suppressed, can obtain good connection reliability simultaneously.
When this adhesive film being used for circuit and connecting, its conductive adhesive layer and/or insulativity bond layer can contain (d) insulativity particle further.Thus, more excellent connection reliability can be maintained.
According to the present invention, even if can provide a kind of when for connecting the thin glass substrate of Thickness Ratio circuit substrate in the past and semiconductor element, also excellent connection reliability can be maintained, the distortion of glass substrate can be suppressed simultaneously, and circuit connecting adhesive film that film-forming properties is also excellent and uses thereof, and use the circuit connection structure of this adhesive film and the method for attachment of manufacture method and circuit block thereof.Particularly in the present invention, though can provide a kind of connect thickness be below 0.3mm circuit block each other time, also can realize the circuit connecting adhesive film of above-mentioned effect.
Accompanying drawing explanation
[Fig. 1] is the pattern sectional view of the circuit connecting adhesive film representing an embodiment of the invention.
[Fig. 2] represents the pattern sectional view making the multilayer body of the circuit connecting adhesive film of present embodiment between a pair circuit block.
[Fig. 3] is the pattern sectional view of the circuit connection structure representing present embodiment.
[Fig. 4] is the pattern sectional view of the evaluation method representing glass substrate wrapping.
Nomenclature
1... substrate, 1a... glass substrate, 1b... wiring diagram, 2... semiconductor element, 2a...IC chip, 2b... projected electrode, 3a... insulativity bond layer, 3b... conductive adhesive layer, 4a, 4b... adhesive composite, 5... conducting particles, 6a, 6b... cured article, 10... circuit connecting adhesive film, 100... circuit connection structure, 200... multilayer body.
Embodiment
Below, as required, with reference to accompanying drawing, while be described in detail to the preferred embodiment of the present invention.But the present invention is not limited to following embodiment.
< circuit connecting adhesive film >
First, with reference to Fig. 1, the circuit connecting adhesive film 10 of present embodiment is described.Fig. 1 is the pattern sectional view of the circuit connecting adhesive film representing an embodiment of the invention.Circuit connecting adhesive film 10 has the conductive adhesive layer 3b containing adhesive composite 4b and conducting particles 5, and formed on conductive adhesive layer 3b, insulativity bond layer 3a containing adhesive composite 4a.
(insulativity bond layer)
Insulativity bond layer 3a contains adhesive composite 4a, it is (following that wherein said adhesive composite 4a comprises (a) film forming material, be sometimes referred to as " (a) composition "), (b) epoxy equivalent (weight) be 200 ~ 3000 epoxy resin (following, be sometimes referred to as " (b) composition ") and (c) potentiality solidifying agent (following, to be sometimes referred to as " (c) composition ").
Film forming material as (a) composition has the polymkeric substance making curable liquid resin combination solidification.By containing film forming material in curable resin composition, when curable resin composition is shaped to membranaceous, can obtain being not easy cracking, fragmentation, being clamminess, and easy to handle adhesive film.
As this film forming material, at least a kind of polymkeric substance be such as selected from phenoxy resin, vinyl-formal resin, polystyrene resin, polyvinyl butyral resin, vibrin, polyamide resin, xylene resin and urethane resin can be enumerated.Among these, preferred phenoxy resin, urethane resin and polyvinyl butyral resin.Their excellent compatibility with (b) composition, and cementability, thermotolerance, the physical strength of circuit connecting adhesive film 10 excellence after solidification can be given.
Phenoxy resin can react to high molecular by making 2 officials' energy phenols and epihalohydrins, or 2 functional epoxy resins and 2 officials can be carried out polyaddition reaction and obtain by phenols.Specifically, can, by making 2 officials of 1 mole can the epihalohydrins of phenols and 0.985 ~ 1.015 mole, under the existence of the catalyzer such as alkali metal hydroxide, carry out reacting and obtaining in non-reactive solvent at the temperature of 40 ~ 120 DEG C.
For the polyaddition reaction obtaining phenoxy resin, 2 functionality epoxy resin are preferably made to be that epoxy group(ing)/phenolic hydroxyl group=1/0.9 ~ 1/1.1 is carried out with the equivalence ratio that coordinates of 2 functionality phenols.Thus, can make the mechanical characteristics of the circuit connecting adhesive film 10 after solidification and thermal property good.In addition, this polyaddition reaction is preferably under the existence of the catalyzer such as alkali metal compound, organophosphorus based compound, cyclic amine based compound, be in the organic solvent such as acid amides system, ether system, ketone system, lactone system, alcohol system of more than 120 DEG C at boiling point, make raw material solid composition be below 50 mass parts, be heated to 50 ~ 200 DEG C and carry out.
As 2 functional epoxy resins for obtaining phenoxy resin, such as bisphenol A type epoxy resin, bisphenol f type epoxy resin, dihydroxyphenyl propane D type epoxy resin, bisphenol-s epoxy resin, xenyl diglycidylether and methyl substituted xenyl diglycidylether can be enumerated.As 2 officials' energy phenols, the material with 2 phenolic hydroxyl group can be enumerated, such as, the bisphenols etc. such as hydroquinones, dihydroxyphenyl propane, Bisphenol F, dihydroxyphenyl propane D, bisphenol S, bisphenol fluorene, methyl substituted bisphenol fluorene, dihydroxybiphenyl and methyl substituted dihydroxybiphenyl.
Phenoxy resin can also carry out modification by free-radical polymerised functional group or other reactive compounds.Above-mentioned various phenoxy resin can be used alone or is used in combination of two or more.
Urethane resin is the elastomerics in molecular chain with amino-formate bond, and normally to making polyprotonic acid (terephthalic acid, m-phthalic acid, phthalic acid, succsinic acid, hexanodioic acid, nonane diacid, sebacic acid etc.) and dibasic alcohol (ethylene glycol, 1, 4-butyleneglycol, 1, 5-pentanediol, 1, 6-hexylene glycol, Diethylene Glycol, triethylene glycol, polyoxyethylene glycol, propylene glycol etc.) carry out the saturated polyester resin with terminal hydroxyl of condensation reaction gained, make its active hydrogen and diisocyanate cpd (first phenylene diisocyanate, diphenylmethanediisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, diphenylmethane diisocyanate etc.) isocyanate group carry out with roughly equivalent the wire polymer reacting gained.
This urethane resin is easily dissolved in organic solvent, such as, in ester system (ethyl acetate, butylacetate etc.), ketone system (methylethylketone, pimelinketone, acetone etc.), fragrant family (toluene, dimethylbenzene, benzene etc.) and chlorine system (trieline, methylene dichloride etc.) solvent.
Polyvinyl butyral resin is the elastomerics in molecular chain with vinyl acetal unit, normally by laggard for vinyl acetate polyisocyanate polyaddition row alkaline purification, then make the wire polymer that itself and aldehyde (formaldehyde, acetaldehyde, propionic aldehyde, butyraldehyde etc.) react and obtains.For polyvinyl butyral resin used in present embodiment, preferred degree of polymerization is 700 ~ 2500, and butyralization degree is more than 65mol%.
If the polymerization degree is less than 700, then the cohesive force of polyvinyl butyral resin is not enough, and film-forming properties declines.If the polymerization degree is more than 2500, then Resin Flow during resin crimping is not enough, and conducting particles cannot, successfully between the electrode of adherend, be difficult to obtain sufficient connection reliability.In addition, if butyralization degree is less than 65mol%, then the ratio of hydroxyl or ethanoyl increases, and is difficult to obtain sufficient connection reliability.
Second-order transition temperature (hereinafter referred to as " Tg ") as the film forming material of (a) composition is not particularly limited, and is preferably 40 ~ 70 DEG C, is more preferably 45 ~ 70 DEG C, more preferably 50 ~ 70 DEG C.If have the film forming material of this Tg, then owing to absorb because of recoverable deformation the internal stress produced in circuit connecting adhesive film 10 after hardening, decrease the amount of warpage of circuit block, therefore more positively can improve connection reliability.
The use level of film forming material, relative to total mass 100 mass parts of adhesive composite 4a, is preferably 10 ~ 50 mass parts, is more preferably 20 ~ 40 mass parts.By making the amount of film forming material be within the scope of this, the distortion that further suppress base material (amount of warpage) can be provided, and the circuit connecting adhesive film 10 that electrical connectivity is more excellent.
The molecular weight of film forming material is larger, then more easily obtain film-forming properties, the melt viscosity affecting adhesive composite 4a mobility can be set in wide scope in addition.As the weight-average molecular weight (Mw) of film forming material, be preferably 5000 ~ 150000, be particularly preferably 10000 ~ 80000.If this value is more than 5000, then there is the tendency being easy to obtain good filming, on the other hand, if be less than 150000, then have the tendency easily obtained with the excellent compatibility of other composition.
In addition, above-mentioned " weight-average molecular weight " is according to the condition shown in following table 1, uses the value that standard polystyrene calibration curve is measured by gel permeation chromatography (GPC).
Table 1
Epoxy equivalent (weight) as (b) composition is the epoxy resin of 200 ~ 3000, may be used singly or two or more in combination: Epicholorohydrin be selected from dihydroxyphenyl propane, at least one in Bisphenol F and dihydroxyphenyl propane D etc. the bisphenol-type epoxy resin that derives, one or both in Epicholorohydrin and phenol resol resins and cresol novolac resin the epoxy group(ing) novolac resin that derives, there is the naphthalene system epoxy resin containing naphthalene nucleus skeleton, and glycidyl amine, glycidyl ether, biphenyl, the various epoxy compoundss etc. in 1 molecule with the glycidyl of more than 2 of ester ring type etc.From preventing electromigratory viewpoint from considering, epoxy resin preferably uses foreign ion (Na +, Cl -deng), water-disintegrable chlorine etc. is reduced to the high purity article of below 300ppm.
In above-mentioned epoxy resin, due to the different grade of molecular weight extensively can be obtained, cementability and reactivity etc. can be set arbitrarily, therefore preferred bisphenol-type epoxy resin.In bisphenol-type epoxy resin, particularly preferably bisphenol f type epoxy resin.The viscosity of bisphenol f type epoxy resin is low, and by combinationally using with phenoxy resin, easily the mobility of circuit connecting adhesive film 10 can be set as wide scope.In addition, bisphenol f type epoxy resin also has the advantage being easy to give circuit connecting adhesive film 10 good bonding.
Epoxy equivalent (weight) as the epoxy resin of (b) composition is 200 ~ 3000, is more preferably 300 ~ 2500, more preferably 350 ~ 2000.If epoxy equivalent (weight) is less than 200, then the warpage quantitative change not only after film solidification is large, and when circuit block connects, there is the situation that adhesive composite 4a oozes out.On the other hand, if epoxy equivalent (weight) is more than 3000, then be not only difficult to obtain good film-forming properties, but also have after circuit block each other crimping temporarily, the tendency declined with the closing force of circuit substrate.Particularly when circuit substrate is glass, significantly show this tendency.
In addition, the epoxy equivalent (weight) of epoxy resin can by measuring based on the method for JIS K 7236.In addition, the epoxy resin of epoxy equivalent (weight) in above-mentioned scope can be synthesized by known method, also can obtain as commercially available product.
The use level of epoxy resin, relative to total mass 100 mass parts of adhesive composite 4a, is preferably 5 ~ 50 mass parts, is more preferably 20 ~ 40 mass parts.When the use level of epoxy resin is less than 5 mass parts, have circuit block when crimping each other, the tendency of the mobility decline of circuit connecting adhesive film 10, when more than 50 mass parts, has the circuit connecting adhesive film 10 when long-term keeping and produces the tendency of distortion.
As (c) composition potentiality solidifying agent, such as imidazoles system, hydrazides system, amine imide and dicyanodiamide can be enumerated.They can be used alone or are used in combination of two or more.Further, can also by potentiality solidifying agent and the combination such as decomposition accelerating agent, inhibitor.In addition, in order to extend the expiration date, preferably use the coating potentiality solidifying agent such as the polymer substance of polyurethane series, Polyester and micro encapsulation.
The use level of potentiality solidifying agent, relative to epoxy resin 100 mass parts, is preferably 10 ~ 200 mass parts, is more preferably 100 ~ 150 mass parts.Thus, sufficient reactivity can be obtained in curing reaction.When the use level of potentiality solidifying agent is less than 10 mass parts, has and cannot obtain sufficient reactivity, be difficult to obtain good bonding strength and the tendency of contact resistance.If the use level of potentiality solidifying agent is more than 200 mass parts, then the mobility having circuit connecting adhesive film 10 declines, and contact resistance rises, the tendencies such as the validity period shortening of circuit connecting adhesive film 10.
In addition, adhesive composite 4a according to its purposes, can contain the additives such as such as tenderizer, anti-aging agent, fire retardant, pigment, thixotropic agent, silane coupling agent further.
(conductive adhesive layer)
For the adhesive composite 4b contained in conductive adhesive layer 3b, as long as can be formed as membranaceous, and the material of the distortion of circuit block can be suppressed when circuit block connects, and can be identical or different with the adhesive composite 4a that contains in insulativity bond layer 3a.But the kind of mentioned component and use level, the mobility being preferably adjusted to insulativity bond layer 3a is greater than the mobility of conductive adhesive layer 3b.
Conducting particles 5 is dispersed with in adhesive composite 4b.By in circuit connecting adhesive film 10 containing conducting particles 5, can by the distortion of conducting particles 5 deviation of the position of absorbing circuit electrode or height, increase contact area, therefore can obtain more stable electrical connection.In addition, by circuit connecting adhesive film 10 containing conducting particles 5, conducting particles 5 zone of oxidation that sometimes can break through circuit electrode surface and passive layer and producing contacts, and can seek the further stabilization be electrically connected.
As this conducting particles 5, metallics or the carbon particless etc. such as Au, Ag, Ni, Cu, scolding tin can be enumerated.From the viewpoint of obtaining abundant validity period, the outermost layer of conducting particles 5 is not the transition metal-types such as Ni, Cu, and is preferably the precious metal of Au, Ag, platinum, wherein more preferably Au.In addition, conducting particles 5 also can be the material being coated to the surface of the transition metal-types such as Ni by precious metal such as Au, can also be the conductting layer of coating above-mentioned metal etc. on dielectric glass, pottery, plastics etc. etc. and formed, the material that makes outermost layer be precious metal.
As conducting particles 5, to be preferably used on plastics coating conductting layer etc. and the particle that formed or hot molten metal particle.Because these particles have deformability by heating and pressurize, when therefore can increase connection and the contact area of circuit electrode, or can the circuit terminal thickness deviation of absorbing circuit parts, the reliability that circuit connects can be improved.
Be arranged on the thickness of the outermost precious metal coating of conducting particles 5, be preferably above.Thus, the resistance between the circuit that fully can reduce connection.But when arranging precious metal coating on the transition metal such as Ni, this thickness is preferably above.This be due to, because of the defect etc. of the precious metal coating that conducting particles 5 produces when blending dispersion, the transition metal such as Ni are exposed in adhesive film, thus by producing free free radical due to the redoxomorphism of this transition metal, cause the storage stability of circuit connecting adhesive film 10 to decline.On the other hand, the upper limit of the thickness of precious metal coating is not particularly limited, but from manufacturing cost viewpoint considers wish to be less than 1 μm.
The median size of conducting particles 5 must be less than the minimum interval of the adjacent electrode of the circuit block connected by circuit connecting adhesive film 10, and when having the height tolerance of circuit electrode, is preferably greater than this height tolerance.The median size of conducting particles 5, is preferably 1 ~ 10 μm, is more preferably 2 ~ 5 μm.If median size is less than 1 μm, then have the height tolerance cannot tackling circuit electrode, the electroconductibility between circuit electrode is easy to the tendency declined, if more than 10 μm, then has the insulativity between adjacent circuit electrode to be easy to the tendency declined.
In addition, above-mentioned " median size " refers to value measured as follows.That is, use electronic scanning type microscope (SEM, company of (strain) Hitachi manufactures, goods name: S-800) observe the primary particle of (multiplying power: 5000 times) optional conducting particles, measure its maximum particle diameter and minimum grain size.Using the primary particle size of the square root of this maximum particle diameter and minimum grain size product as this particle.Further, to optional 50 conducting particless, primary particle size is measured as described above, and using this mean value as median size.In addition, the median size of (d) described later insulativity particle is also similarly measured.
The use level of conducting particles 5, relative to total mass 100 mass parts of adhesive composite 4b, is preferably set to 0.1 ~ 30 mass parts, is more preferably set to 0.1 ~ 20 mass parts.Thus, the adjacent short circuit etc. caused because of the conducting particles 5 of surplus can be prevented.
Insulativity bond layer 3a and/or conductive adhesive layer 3b can contain (d) insulativity particle (following, to be sometimes referred to as " (d) composition ") further.Thus, the internal pressure in the bond layer after film solidification relaxes further.In addition, insulativity bond layer 3a is more preferably containing (d) insulativity particle.
As this (d) insulativity particle, such as, the inorganic particulate such as silicon-dioxide, aluminum oxide can be enumerated, or silicon rubber, MMB methyl methacrylate butadiene vinylbenzene (MBS), acrylic rubber, polymethylmethacrylate, polybutadiene rubber etc.
In addition, as (d) insulativity particle, in addition to the foregoing, can also enumerate such as by acrylic resin, polyester, urethane, polyvinyl butyral acetal, polyarylester (polyarylate), polystyrene, NBR, SBR and polysiloxane-modified resin etc. and comprise the particle that they form as the multipolymer of composition.As insulativity particle, preferred molecular weight is the organic fine particles of more than 1,000,000 or has the organic fine particles of three-dimensional crosslinking structure.The dispersiveness of this insulativity particle to solidification compound is high.In addition, " there is three-dimensional crosslinking structure " herein and represent that polymer chain has tridimensional network, there is the insulativity particle of this structure, such as, can process the polymkeric substance with multiple reflecting point by using linking agent and obtain, wherein said linking agent has the functional group that two or more can be combined with this reflecting point.Molecular weight is the organic fine particles of more than 1,000,000 and the organic fine particles with three-dimensional crosslinking structure, preferably all low to the solvability of solvent.These insulativity particles low to the solvability of solvent, can obtain above-mentioned effect more significantly.In addition, from the viewpoint of obtaining above-mentioned effect more significantly, the organic fine particles that molecular weight is more than 1,000,000 and the insulativity particle that the organic fine particles with three-dimensional crosslinking structure is preferably formed by (methyl) alkyl acrylate-polysiloxane copolymer, polysiloxane-(methyl) acrylic copolymer or their mixture.In addition, as (d) composition, such as, can also use as insulativity particles such as polyamic acid particle described in Japanese Unexamined Patent Publication 2008-150573 publication and polyimide particle.
Further, as (d) composition, can also use and there is coreshell type structure, and in stratum nucleare and shell, form different insulativity particles.As hud typed insulativity organic filler, specifically, can to enumerate with polysiloxane-acrylic rubber for core and the particle of grafted propylene acid resin, be core with acrylic copolymer and the particle etc. of grafted propylene acid resin.In addition, can also use as core-shell type polysiloxane particulate described in International Publication No. 2009/051067 brochure, as (methyl) alkyl acrylate-butadiene-styrene copolymer described in International Publication No. 2009/020005 brochure or mixture, (methyl) alkyl acrylate-polysiloxane copolymer or mixture and polysiloxane-organic filler such as insulativity such as (methyl) acrylic copolymer or mixture etc., as Multifunctional Aids for Paper--Core-shell Structure Polymer Particles described in Japanese Unexamined Patent Publication 2002-256037 publication, and as nucleocapsid structure rubber particles etc. described in Japanese Unexamined Patent Publication 2004-18803 publication.These hud typed insulativity particles, can be used alone a kind, also two or more can be combinationally used in addition.In addition, for this (d) insulativity particle, its median size is preferably about 0.01 ~ 2 μm.
When conductive adhesive layer 3b contains (d) insulativity particle, the total use level of (d) insulativity particle and conducting particles 5, relative to total mass 100 mass parts of adhesive composite 4b, be preferably below 80 mass parts, be more preferably below 60 mass parts.If the total use level of insulativity particle and conducting particles is more than 80 mass parts, then the tendency having film-forming properties and the closing force of electrode is declined.In addition, when insulativity bond layer 3a contains (d) insulativity particle, the use level of (d) insulativity particle, relative to total mass 100 mass parts of adhesive composite 4a, be preferably below 60 mass parts, be more preferably below 40 mass parts.If the use level of insulativity particle is more than 60 mass parts, then the tendency that the closing force having film-forming properties and conducting particles 5 pairs of electrodes declines.
The thickness of insulativity bond layer 3a is preferably 12 ~ 20 μm, is more preferably 14 ~ 16 μm.In addition, the thickness of conductive adhesive layer 3b is preferably 3 ~ 12 μm, is more preferably 5 ~ 10 μm.By making each layer have such thickness, operability, conducting particles seizure property and connection reliability can be kept well.
And the thickness of circuit connecting adhesive film 10 is preferably 10 ~ 40 μm.When this thickness is less than 10 μm, then having cannot space completely between landfill adherend, the tendency that bonding force declines, if more than 40 μm, then when having a crimping, resin overflows, and pollutes the tendency of circumferential component.
The formation of insulativity bond layer 3a and conductive adhesive layer 3b, can by the mixture comprising adhesive composite 4a for insulativity bond layer 3a, and for comprising the mixture of adhesive composite 4b and conducting particles 5 conductive adhesive layer 3b, be dissolved or dispersed in respectively in organic solvent, make their aqueousization and modulate coating fluid, by this coating solution on such as separability base material (supporting film), carry out except desolventizing below the active temperature of solidifying agent.
As other method forming insulativity bond layer 3a and conductive adhesive layer 3b, the constituent adding thermal insulation bond layer 3a and conductive adhesive layer 3b respectively can be enumerated, after guaranteeing mobility, add solvent, form coating fluid, and be coated on separability base material, except the method for desolventizing below the active temperature of solidifying agent.
For solvent at this moment used, consider from the deliquescent viewpoint improving adhesive composite 4a and 4b, optimization aromatic hydrocarbon system solvent and the mixed solvent containing oxygen series solvent.In addition, as separability base material, such as, the polymeric film that polyethylene terephthalate (PET), polypropylene, polyethylene, polyester etc. have thermotolerance and solvent resistance can be enumerated.Be particularly suitable for using and carried out surface treatment thus the PET film etc. with release property.
The thickness of separability base material is preferably 20 ~ 75 μm.When this thickness is less than 20 μm, has reluctant tendency when temporarily crimping, if more than 75 μm, then have the tendency producing winding between circuit connecting adhesive film 10 and separability base material.
As the method for making of circuit connecting adhesive film 10, such as, can adopt method stacked for as above formed conductive adhesive layer 4b and insulativity bond layer 4a, or the known method such as method of applying layers successively.
The anisotropic conductive adhesive of the harder substrates such as the circuit connecting adhesive film of present embodiment can be used as in COG (Chip On Glass) etc. installs, bonding glass and semiconductor element.
Such as, carry out heating and pressurizeing under the state making circuit connecting adhesive film between the circuit block such as glass substrate and semiconductor element, thus the circuit electrode that both can be made to have is electrically connected to each other.Herein, when using the circuit block that the thickness of substrate is below 0.3mm, warpage is a problem especially, in this case, especially effectively can use the circuit connecting adhesive film of present embodiment.
That is, adhesive film can be used for making under the state that the 1st circuit electrode is relative with the 2nd circuit electrode, make the 1st circuit block defining the 1st circuit electrode on the interarea that thickness is the 1st circuit substrate of below 0.3mm, with at thickness be below 0.3mm the 2nd circuit substrate interarea on define the 2nd circuit electrode the 2nd circuit block electrical connection circuit be connected, wherein said adhesive film possesses the conductive adhesive layer containing adhesive composite and conducting particles, with the insulativity bond layer containing adhesive composite but not containing conducting particles, and the adhesive composite contained in insulativity bond layer comprises (a) film forming material, b () epoxy equivalent (weight) is epoxy resin and (c) potentiality solidifying agent of 200 ~ 3000.
In addition, when using the material that the thickness of substrate is below 0.2mm further, warpage issues becomes more remarkable.As the lower limit of thickness of circuit substrate of circuit connecting adhesive film that can use present embodiment, as long as respective physical strength can be maintained, just no problem, be preferably more than 0.05mm, be more preferably more than 0.08mm.
In the circuit block such as glass substrate and semiconductor element, multiple (can be single sometimes) circuit electrode can be set usually.By the relative configuration at least partially of circuit electrode set in the circuit block of relative configuration, and carry out heating and pressurizeing under the state making circuit connecting adhesive film between the circuit electrode of relative configuration, thus the circuit electrode of relative configuration can be made to be electrically connected to each other, obtain circuit connection structure.
Thus, by heating the circuit block of relative configuration and pressurize, thus the circuit electrode making relative configuration each other, is electrically connected by contact and a kind of situation directly contacted or two kinds of situations across conducting particles.
< circuit connection structure >
Fig. 2 represents the pattern sectional view making the circuit connecting adhesive film 10 of present embodiment between a pair circuit block, multilayer body 200 namely between substrate 1 and semiconductor element 2, and Fig. 3 represents to heat the multilayer body 200 shown in Fig. 2 and the pattern sectional view of circuit connection structure 100 of present embodiment of the gained that pressurizes.
Circuit connection structure 100 shown in Fig. 3 possesses the substrate 1 (the 1st circuit block) defining wiring diagram 1b (the 1st circuit electrode) on the interarea of glass substrate 1a (the 1st circuit substrate), the interarea of IC chip 2a (the 2nd circuit substrate) defines the semiconductor element 2 (the 2nd circuit block) of projected electrode 2b (the 2nd circuit electrode), and cured article 6a and 6b (connection section) of circuit connecting adhesive film 10 between substrate 1 and semiconductor element 2.In circuit connection structure 100, be electrically connected under the state that circuit Fig. 1 b and projected electrode 2b is oppositely disposed.
Herein, wiring diagram 1b is preferably formed by transparent conductive material.As transparent conductive material, ITO (tin indium oxide) typically can be used.In addition, projected electrode 2b is formed by the material (being preferably selected from least one in gold and silver, tin, platinum metals and ITO) of the electroconductibility with the degree that can work as electrode.
In circuit connection structure 100, relative projected electrode 2b and wiring diagram 1b is electrically connected each other by conducting particles 5.That is, conducting particles 5 is electrically connected by directly contacting with wiring diagram 1b with projected electrode 2b.
Circuit connection structure 100 is by cured article 6a and 6b of circuit connecting adhesive film 10, substrate 1 and semiconductor element 2 are engaged, even if therefore when the thickness of circuit block thin (below 0.3mm), also fully can suppress the warpage of substrate 1, and obtain excellent connection reliability.
This circuit connection structure 100 can be manufactured by operation below.That is, can be manufactured by following manufacture method, described manufacture method comprise make the circuit connecting adhesive film of present embodiment between possess the substrate 1 (the 1st circuit block) that defines wiring diagram 1b (the 1st circuit electrode) on the interarea that thickness is the glass substrate 1a (the 1st circuit substrate) of below 0.3mm and at thickness be the interarea of the IC chip 2a (the 2nd circuit substrate) of below 0.3mm defines projected electrode 2b (the 2nd circuit electrode) a pair circuit block of semiconductor element 2 (the 2nd circuit block) between, obtain the operation of multilayer body, layer body carries out heating and pressurizeing through the stack, circuit connecting adhesive film is solidified, thus formed between a pair circuit block, the operation of bonding a pair circuit block of the mode connection section be each other electrically connected to make the wiring diagram 1b of relative configuration (the 1st circuit electrode) and projected electrode 2b (the 2nd circuit electrode).
The method of attachment > of < circuit block
Circuit connection structure 100 can by under the state of circuit Fig. 1 b and projected electrode 2b relative configuration, to defining the substrate 1 of wiring diagram 1b on the interarea of glass substrate 1a, define the semiconductor element 2 of projected electrode 2b on the interarea of IC chip 2a, and the circuit connecting adhesive film 10 between substrate 1 and semiconductor element 2 carries out heating and pressurizeing, thus the method that wiring diagram 1b and projected electrode 2b is electrically connected is obtained.
In the method, the circuit connecting adhesive film 10 formed on separability base material can be heated and be pressurizeed fitting under the state on substrate 1, interim crimping circuit connecting adhesive film 10, and peel off separability base material, then while make circuit electrode position overlap, while place after semiconductor element 2, carry out heating and pressurizeing, prepare the lamination multilayer body 200 of substrate 1, circuit connecting adhesive film 10 and semiconductor element 2 successively.
To the condition that above-mentioned multilayer body 200 heats and pressurizes, suitably can modulate according to the solidified nature etc. of adhesive composite 4a and 4b in circuit connecting adhesive film 10, thus circuit connecting adhesive film 10 is solidified and obtains sufficient bonding strength.
According to the method for attachment of the circuit block of the circuit connecting adhesive film of use present embodiment, even if when the thickness of circuit block thin (below 0.3mm), the warpage of circuit block also can be suppressed, obtains good connection reliability.
[embodiment]
Below, enumerate embodiment, the present invention is further illustrated.But the present invention is not limited to these embodiments.
(1) preparation of circuit connecting adhesive film
Prepare each material for making conductive adhesive layer and insulativity bond layer as described below.In addition, weigh each film forming material of about 10mg, the DSC device (goods name: Q1000) using TA Instruments company to manufacture also according to the regulation of JIS K7121-1987, measures the Tg of film forming material.In addition, the epoxy equivalent (weight) of epoxy resin, measures according to the method based on JIS K 7236.
(a) composition: film forming material
" FX-316 " (Dongdu changes into manufacture, goods name): phenoxy resin (Tg:66 DEG C)
(b) composition: epoxy equivalent (weight) is the epoxy resin of 200 ~ 3000
" Epicoat (エ ピ コ mono-ト) 872 " (japan epoxy resin manufacture, goods name): flexible epoxy resin (epoxy equivalent (weight) is 600 ~ 700)
" Epicoat 4004P " (japan epoxy resin manufacture, goods name): bisphenol f type epoxy resin (epoxy equivalent (weight) is 880)
" EXA-4816 " (DIC manufactures, goods name): flexibility epoxy resin (epoxy equivalent (weight) is 403)
" EXA-4822 " (DIC manufactures, goods name): obdurability epoxy resin (epoxy equivalent (weight) is 385)
" EXA-4850-150 " (DIC manufactures, goods name): flexibility epoxy resin (epoxy equivalent (weight) is 450)
(b) ' composition: the epoxy resin beyond (b) composition
" YL-980 " (japan epoxy resin manufacture, goods name): bisphenol A type epoxy resin (epoxy equivalent (weight) is 180 ~ 190)
" YL-983U " (japan epoxy resin manufacture, goods name): bisphenol f type epoxy resin (epoxy equivalent (weight) is 165 ~ 175)
" Epicoat 1032H60 " (japan epoxy resin manufacture, goods name): phenolic resin varnish type epoxy resin (epoxy equivalent (weight) is 163 ~ 175)
" EXA-4710 " (DIC manufactures, goods name): high heat epoxy (epoxy equivalent (weight) is 170)
" Epicoat 1256 " (japan epoxy resin manufacture, goods name): phenoxy group type epoxy resin (epoxy equivalent (weight) is 7500 ~ 8500)
(c): potentiality solidifying agent
" Novacure (ノ バ キ ユ ア) " (Asahi Chemical Industry's chemistry manufactures, goods name)
(d): insulativity particle
" X-52-7030 " (SHIN-ETSU HANTOTAI's organosilicon manufactures, goods name): granular of polyorganosiloxane
(conducting particles)
" Micro pearl (ミ Network ロ パ mono-Le) AU " (ponding chemistry manufactures, goods name)
(additive)
" SH6040 " (eastern beautiful DOW CORNING manufacture, goods name): silane coupling agent
(embodiment 1)
< conductive adhesive layer >
After 30 mass parts phenoxy resins " FX-316 ", the epoxy resin " Epicoat872 " being respectively 10 mass parts and " Epicoat 4004P ", 30 mass parts potentiality solidifying agent " Novacure " and 1 mass parts silane coupling agent " SH6040 " are dissolved in 100 mass parts toluene, add 19 mass parts conducting particless " Micropearl AU ", modulation conductive adhesive layer formation coating fluid.
((strain) Kang Jing Jing Ji company manufactures to use apparatus for coating, goods name: precision coating machine), the thickness this coating solution being implemented in one side (face of applied coating solution) demoulding process (middle lift-off processing) is in the PET film of 50 μm, and at 70 DEG C warm air drying 10 minutes, form the conductive adhesive layer that thickness is 10 μm on a pet film thus.
< insulativity bond layer >
50 mass parts phenoxy resins " FX-316 ", 28 mass parts epoxy resin " Epicoat 872 ", 18 mass parts potentiality solidifying agent " Novacure " and 1 mass parts silane coupling agent " SH6040 " are dissolved in 100 mass parts after the toluene of solvent, add 3 mass parts granular of polyorganosiloxane " X-52-7030 ", modulation insulativity bond layer formation coating fluid.
With similarly above-mentioned, ((strain) Kang Jing Jing Ji company manufactures to use apparatus for coating, goods name: precision coating machine), the thickness this coating solution being implemented in one side demoulding process is in the PET film of 50 μm, and at 70 DEG C warm air drying 10 minutes, form the insulativity bond layer that thickness is 15 μm on a pet film thus.
< circuit connecting adhesive film >
For conductive adhesive layer and the insulativity bond layer of above-mentioned gained, heat at 50 DEG C, while carry out lamination with roll squeezer, obtain the circuit connecting adhesive film that thickness is 25 μm.
(embodiment 2 ~ 5 and comparative example 1 ~ 5)
Except adding each composition with the mixing ratio (mass parts) shown in table 2, beyond modulation insulativity bond layer formation coating fluid, and embodiment 1 similarly operates, and makes circuit connecting adhesive film.
Table 2
(2) making of circuit connection structure
The preparation > of < substrate and semiconductor element
As substrate, prepare at glass substrate (Corning#1737,38mm × 28mm, thickness is 0.3mm) surface on define the substrate of ITO (Indium Tin Oxide) wiring diagram (pattern width is 50 μm, is spaced apart 5 μm between electrode).As semiconductor element, prepare IC chip (profile is 17mm × 17mm, and thickness is 0.3mm, and projection is of a size of 50 μm × 50 μm, is spaced apart 50 μm between projection, and rising height is 15 μm).
The connection > of < substrate and semiconductor element
Use the circuit connecting adhesive film made in above-described embodiment and comparative example, and the connection carrying out IC chip and glass substrate as follows.In addition, in this connection, the heating crimping utensil using the platform (150mm × 150mm) formed by ceramic heater and instrument (Star one Le) (3mm × 20mm) to form.
First, the PET film on the conductive adhesive layer of stripper circuit connecting adhesive film (1.5mm × 20mm), and pass through at 80 DEG C, 0.98MPa (10kgf/cm 2) condition under heating and pressurization 2 seconds, by conductive adhesive aspect adhere on the glass substrate.Then, PET film on the insulativity bond layer of stripper circuit connecting adhesive film, and after the position of the projection and glass substrate of carrying out IC chip overlaps, be up to the condition of Da Wendu 190 DEG C and projected electrode area reduced pressure 70MPa in the actual measurement of circuit connecting adhesive film under, heating and the pressurization in 10 seconds is carried out above IC chip, insulativity bond layer is adhered on the ic chip, is carried out the formal connection of chip and glass substrate by circuit connecting adhesive film.
(3) evaluate
(film-forming properties)
For the circuit connecting adhesive film made, according to following benchmark evaluation film-forming properties.In addition, " can film forming ", refer to the film of making be not easy cracking, broken, be clamminess.The evaluation result of film-forming properties is shown in table 3.
A: can film forming
B: cannot film forming
(warpage)
Fig. 4 is the pattern sectional view of the evaluation method representing glass substrate wrapping.Circuit connection structure 100 shown in Fig. 4 is made up of substrate 1, semiconductor element 2 and the circuit connecting adhesive film 10 by the solidification of their joints.When L represents that the height below the substrate 1 of semiconductor element 2 center is 0, from semiconductor element 2 center to apart from 12.5mm substrate 1 below height in maximum value.Take L as the evaluation that index carries out warpage.The value of L is less, then represent that warpage is less.Evaluate with two grades, be " A " by L value less than the average evaluation of 15 μm, and be " B " by the average evaluation of more than 15 μm.The evaluation result of warpage is shown in table 3.
In addition, in the making of circuit connection structure, respectively the thickness of glass substrate and IC chip is changed into 0.5mm from 0.3mm, and be used in the circuit connecting adhesive film made in above-described embodiment and comparative example, to be connected with above-mentioned identical operation, make conjugant.When carrying out warpage to the conjugant of gained and evaluating, the warpage of arbitrary conjugant is less than 15 μm.
(connection reliability)
The circuit connection structure of use, measures the circuit of glass substrate and the interelectrode resistance value of semiconductor element.Use volt ohm-milliammeter (device name: MLR21, ETAC company manufacture), temperature be 85 DEG C, humidity is 85%RH, measure after THT test (Thermal Humidity Test) of 1000 hours.Based on the resistance value after THT test, according to following benchmark, with A or B two grade evaluation connection reliability.The measurement result of each circuit connection structure is shown in table 3.
A: less than 10 Ω
More than B:10 Ω
Table 3
Even if circuit connecting adhesive film of the present invention is when being connected to each other of the circuit block for thinner thickness, also all show excellent characteristic in the either side of film-forming properties, warpage and connection reliability.

Claims (110)

1. a circuit connection structure, it possess on the interarea that thickness is the glass substrate as the 1st circuit substrate of below 0.3mm, define the 1st circuit electrode the 1st circuit block,
At thickness be the 2nd circuit substrate of below 0.3mm interarea on define the 2nd circuit electrode, and it is relative with described 1st circuit electrode to be configured to described 2nd circuit electrode, and the semiconductor element as the 2nd circuit block that described 2nd circuit electrode is electrically connected with described 1st circuit electrode and
Connection section between described 1st circuit block and described 2nd circuit block,
Described connection section is the cured article of circuit connecting adhesive film,
Described circuit connecting adhesive film possesses the conductive adhesive layer containing adhesive composite and conducting particles and the insulativity bond layer containing adhesive composite but not containing conducting particles, wherein, the adhesive composite contained in described insulativity bond layer comprises (a) film forming material, (b) epoxy equivalent (weight) is 300 ~ 2500 epoxy resin and (c) potentiality solidifying agent.
2. circuit connection structure as claimed in claim 1, described (b) epoxy equivalent (weight) is the epoxy equivalent (weight) of the epoxy resin of 300 ~ 2500 is 350 ~ 2000.
3. circuit connection structure as claimed in claim 1 or 2, described (a) film forming material comprises at least a kind that is selected from phenoxy resin, vinyl-formal resin, polystyrene resin, polyvinyl butyral resin, vibrin, polyamide resin, xylene resin and urethane resin.
4. circuit connection structure as claimed in claim 1 or 2, the weight-average molecular weight of described (a) film forming material is 5000 ~ 150000.
5. circuit connection structure as claimed in claim 1 or 2, (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise be selected from following at least a kind: by Epicholorohydrin be selected from dihydroxyphenyl propane, at least one in Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives, by the one or both in Epicholorohydrin and phenol resol resins and cresol novolac resin the epoxy group(ing) phenolic resin varnish type epoxy resin that derives, there is the naphthalene system epoxy resin containing naphthalene nucleus skeleton, and there is the glycidyl amine type epoxy resin of glycidyl of more than 2 in 1 molecule, diglycidyl ether type epoxy resin, biphenyl type epoxy resin and alicyclic epoxy resin.
6. circuit connection structure as claimed in claim 5, the epoxy resin that described (b) epoxy equivalent (weight) is 300 ~ 2500 comprise by Epicholorohydrin and at least one be selected from dihydroxyphenyl propane, Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives.
7. circuit connection structure as claimed in claim 6, described (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise bisphenol f type epoxy resin.
8. circuit connection structure as claimed in claim 1 or 2, described (b) epoxy equivalent (weight) is total mass 100 mass parts of use level relative to the described adhesive composite contained in described insulativity bond layer of the epoxy resin of 300 ~ 2500, is 5 ~ 50 mass parts.
9. circuit connection structure as claimed in claim 1 or 2, described (c) potentiality solidifying agent comprises at least a kind that is selected from imidazoles system solidifying agent, hydrazides system solidifying agent, amine imide and dicyanodiamide.
10. circuit connection structure as claimed in claim 1 or 2, the use level of described (c) potentiality solidifying agent is epoxy resin 100 mass parts of 300 ~ 2500 relative to described (b) epoxy equivalent (weight), is 10 ~ 200 mass parts.
11. circuit connection structures as claimed in claim 1 or 2, described conducting particles is the particle defining conductting layer on plastics.
12. circuit connection structures as claimed in claim 1 or 2, the median size of described conducting particles is 1 ~ 10 μm.
13. circuit connection structures as claimed in claim 1 or 2, the use level of described conducting particles is 0.1 ~ 30 mass parts relative to total mass 100 mass parts of the described adhesive composite contained in described conductive adhesive layer.
14. circuit connection structures as claimed in claim 1 or 2, wherein said conductive adhesive layer and/or described insulativity bond layer are further containing (d) insulativity particle.
15. circuit connection structures as claimed in claim 1 or 2, the thickness of described insulativity bond layer is 12 ~ 20 μm.
16. circuit connection structures as claimed in claim 15, the thickness of described insulativity bond layer is 14 ~ 16 μm.
17. circuit connection structures as claimed in claim 1 or 2, the thickness of described conductive adhesive layer is 3 ~ 12 μm.
18. circuit connection structures as claimed in claim 17, the thickness of described conductive adhesive layer is 5 ~ 10 μm.
19. circuit connection structures as claimed in claim 1 or 2, the thickness of described circuit connecting adhesive film is 10 ~ 40 μm.
20. circuit connection structures as claimed in claim 1 or 2, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively below 0.2mm.
21. circuit connection structures as claimed in claim 1 or 2, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.05mm.
22. circuit connection structures as claimed in claim 21, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.08mm.
The manufacture method of 23. 1 kinds of circuit connection structures, it comprise make circuit connecting adhesive film between possess the 1st circuit block that defines the 1st circuit electrode on the interarea that thickness is the glass substrate as the 1st circuit substrate of below 0.3mm and at thickness be the interarea of the 2nd circuit substrate of below 0.3mm defines the semiconductor element as the 2nd circuit block of the 2nd circuit electrode a pair circuit block between, obtain the operation of multilayer body, and
By heating described multilayer body and pressurizeing, described circuit connecting adhesive film is solidified, thus formed between described a pair circuit block, to make the operation of bonding described a pair circuit block of the mode connection section each other of described 1st circuit electrode of relative configuration and described 2nd circuit electrode electrical connection
Described circuit connecting adhesive film possesses the conductive adhesive layer containing adhesive composite and conducting particles and the insulativity bond layer containing adhesive composite but not containing conducting particles, wherein, the adhesive composite contained in described insulativity bond layer comprises (a) film forming material, (b) epoxy equivalent (weight) is 300 ~ 2500 epoxy resin and (c) potentiality solidifying agent.
24. manufacture method as claimed in claim 23, described (b) epoxy equivalent (weight) is the epoxy equivalent (weight) of the epoxy resin of 300 ~ 2500 is 350 ~ 2000.
25. manufacture method as described in claim 23 or 24, described (a) film forming material comprises at least a kind that is selected from phenoxy resin, vinyl-formal resin, polystyrene resin, polyvinyl butyral resin, vibrin, polyamide resin, xylene resin and urethane resin.
26. manufacture method as described in claim 23 or 24, the weight-average molecular weight of described (a) film forming material is 5000 ~ 150000.
27. manufacture method as described in claim 23 or 24, (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise be selected from following at least a kind: by Epicholorohydrin be selected from dihydroxyphenyl propane, at least one in Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives, by the one or both in Epicholorohydrin and phenol resol resins and cresol novolac resin the epoxy group(ing) phenolic resin varnish type epoxy resin that derives, there is the naphthalene system epoxy resin containing naphthalene nucleus skeleton, and there is the glycidyl amine type epoxy resin of glycidyl of more than 2 in 1 molecule, diglycidyl ether type epoxy resin, biphenyl type epoxy resin and alicyclic epoxy resin.
28. manufacture method as claimed in claim 27, the epoxy resin that described (b) epoxy equivalent (weight) is 300 ~ 2500 comprise by Epicholorohydrin be selected from least one in dihydroxyphenyl propane, Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives.
29. manufacture method as claimed in claim 28, described (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise bisphenol f type epoxy resin.
30. manufacture method as described in claim 23 or 24, described (b) epoxy equivalent (weight) is total mass 100 mass parts of use level relative to the described adhesive composite contained in described insulativity bond layer of the epoxy resin of 300 ~ 2500, is 5 ~ 50 mass parts.
31. manufacture method as described in claim 23 or 24, described (c) potentiality solidifying agent comprises at least a kind that is selected from imidazoles system solidifying agent, hydrazides system solidifying agent, amine imide and dicyanodiamide.
32. manufacture method as described in claim 23 or 24, the use level of described (c) potentiality solidifying agent is epoxy resin 100 mass parts of 300 ~ 2500 relative to described (b) epoxy equivalent (weight), is 10 ~ 200 mass parts.
33. manufacture method as described in claim 23 or 24, described conducting particles is the particle defining conductting layer on plastics.
34. manufacture method as described in claim 23 or 24, the median size of described conducting particles is 1 ~ 10 μm.
35. manufacture method as described in claim 23 or 24, the use level of described conducting particles is 0.1 ~ 30 mass parts relative to total mass 100 mass parts of the described adhesive composite contained in described conductive adhesive layer.
36. manufacture method as described in claim 23 or 24, wherein said conductive adhesive layer and/or described insulativity bond layer are further containing (d) insulativity particle.
37. manufacture method as described in claim 23 or 24, the thickness of described insulativity bond layer is 12 ~ 20 μm.
38. manufacture method as claimed in claim 37, the thickness of described insulativity bond layer is 14 ~ 16 μm.
39. manufacture method as described in claim 23 or 24, the thickness of described conductive adhesive layer is 3 ~ 12 μm.
40. manufacture method as claimed in claim 39, the thickness of described conductive adhesive layer is 5 ~ 10 μm.
41. manufacture method as described in claim 23 or 24, the thickness of described circuit connecting adhesive film is 10 ~ 40 μm.
42. manufacture method as described in claim 23 or 24, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively below 0.2mm.
43. manufacture method as described in claim 23 or 24, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.05mm.
44. manufacture method as claimed in claim 43, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.08mm.
The method of attachment of 45. 1 kinds of circuit blocks, wherein, under the state making the 1st circuit electrode and the 2nd circuit electrode relative configuration, to at thickness be below 0.3mm the glass substrate as the 1st circuit substrate interarea on define the 1st circuit block of the 1st circuit electrode, at thickness be the 2nd circuit substrate of below 0.3mm interarea on define the semiconductor element as the 2nd circuit block of the 2nd circuit electrode, and the circuit connecting adhesive film be configured between described 1st circuit block and described 2nd circuit block carries out heating and pressurizeing, thus make described 1st circuit electrode and described 2nd circuit electrode electrical connection,
Described circuit connecting adhesive film possesses the conductive adhesive layer containing adhesive composite and conducting particles and the insulativity bond layer containing adhesive composite but not containing conducting particles, wherein, the adhesive composite contained in described insulativity bond layer comprises (a) film forming material, (b) epoxy equivalent (weight) is 300 ~ 2500 epoxy resin and (c) potentiality solidifying agent.
46. methods of attachment as claimed in claim 45, described (b) epoxy equivalent (weight) is the epoxy equivalent (weight) of the epoxy resin of 300 ~ 2500 is 350 ~ 2000.
47. methods of attachment as described in claim 45 or 46, described (a) film forming material comprises at least a kind that is selected from phenoxy resin, vinyl-formal resin, polystyrene resin, polyvinyl butyral resin, vibrin, polyamide resin, xylene resin and urethane resin.
48. methods of attachment as described in claim 45 or 46, the weight-average molecular weight of described (a) film forming material is 5000 ~ 150000.
49. methods of attachment as described in claim 45 or 46, (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise be selected from following at least a kind: by Epicholorohydrin be selected from dihydroxyphenyl propane, at least one in Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives, by the one or both in Epicholorohydrin and phenol resol resins and cresol novolac resin the epoxy group(ing) phenolic resin varnish type epoxy resin that derives, there is the naphthalene system epoxy resin containing naphthalene nucleus skeleton, and there is the glycidyl amine type epoxy resin of glycidyl of more than 2 in 1 molecule, diglycidyl ether type epoxy resin, biphenyl type epoxy resin and alicyclic epoxy resin.
50. methods of attachment as claimed in claim 49, the epoxy resin that described (b) epoxy equivalent (weight) is 300 ~ 2500 comprise by Epicholorohydrin be selected from least one in dihydroxyphenyl propane, Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives.
51. methods of attachment as claimed in claim 50, described (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise bisphenol f type epoxy resin.
52. methods of attachment as described in claim 45 or 46, described (b) epoxy equivalent (weight) is total mass 100 mass parts of use level relative to the described adhesive composite contained in described insulativity bond layer of the epoxy resin of 300 ~ 2500, is 5 ~ 50 mass parts.
53. methods of attachment as described in claim 45 or 46, described (c) potentiality solidifying agent comprises at least a kind that is selected from imidazoles system solidifying agent, hydrazides system solidifying agent, amine imide and dicyanodiamide.
54. methods of attachment as described in claim 45 or 46, the use level of described (c) potentiality solidifying agent is epoxy resin 100 mass parts of 300 ~ 2500 relative to described (b) epoxy equivalent (weight), is 10 ~ 200 mass parts.
55. methods of attachment as described in claim 45 or 46, described conducting particles is the particle defining conductting layer on plastics.
56. methods of attachment as described in claim 45 or 46, the median size of described conducting particles is 1 ~ 10 μm.
57. methods of attachment as described in claim 45 or 46, the use level of described conducting particles is 0.1 ~ 30 mass parts relative to total mass 100 mass parts of the described adhesive composite contained in described conductive adhesive layer.
58. methods of attachment as described in claim 45 or 46, wherein said conductive adhesive layer and/or described insulativity bond layer are further containing (d) insulativity particle.
59. methods of attachment as described in claim 45 or 46, the thickness of described insulativity bond layer is 12 ~ 20 μm.
60. methods of attachment as claimed in claim 59, the thickness of described insulativity bond layer is 14 ~ 16 μm.
61. methods of attachment as described in claim 45 or 46, the thickness of described conductive adhesive layer is 3 ~ 12 μm.
62. methods of attachment as claimed in claim 61, the thickness of described conductive adhesive layer is 5 ~ 10 μm.
63. methods of attachment as described in claim 45 or 46, the thickness of described circuit connecting adhesive film is 10 ~ 40 μm.
64. methods of attachment as described in claim 45 or 46, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively below 0.2mm.
65. methods of attachment as described in claim 45 or 46, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.05mm.
66. methods of attachment as described in claim 65, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.08mm.
67. 1 kinds of adhesive films are used as the application of circuit connecting adhesive film,
Described adhesive film possesses the conductive adhesive layer containing adhesive composite and conducting particles and the insulativity bond layer containing adhesive composite but not containing conducting particles,
Wherein, the adhesive composite contained in described insulativity bond layer comprises (a) film forming material, (b) epoxy equivalent (weight) is 300 ~ 2500 epoxy resin and (c) potentiality solidifying agent,
Described circuit connecting adhesive film makes the 1st circuit block defining the 1st circuit electrode on the interarea that thickness is the glass substrate as the 1st circuit substrate of below 0.3mm, with at thickness be below 0.3mm the 2nd circuit substrate interarea on define the semiconductor element as the 2nd circuit block of the 2nd circuit electrode, make to be electrically connected under the described 1st circuit electrode state relative with described 2nd circuit electrode.
68. application as described in claim 67, described (b) epoxy equivalent (weight) is the epoxy equivalent (weight) of the epoxy resin of 300 ~ 2500 is 350 ~ 2000.
69. application as described in claim 67 or 68, described (a) film forming material comprises at least a kind that is selected from phenoxy resin, vinyl-formal resin, polystyrene resin, polyvinyl butyral resin, vibrin, polyamide resin, xylene resin and urethane resin.
70. application as described in claim 67 or 68, the weight-average molecular weight of described (a) film forming material is 5000 ~ 150000.
71. application as described in claim 67 or 68, (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise be selected from following at least a kind: by Epicholorohydrin be selected from dihydroxyphenyl propane, at least one in Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives, by the one or both in Epicholorohydrin and phenol resol resins and cresol novolac resin the epoxy group(ing) phenolic resin varnish type epoxy resin that derives, there is the naphthalene system epoxy resin containing naphthalene nucleus skeleton, and there is the glycidyl amine type epoxy resin of glycidyl of more than 2 in 1 molecule, diglycidyl ether type epoxy resin, biphenyl type epoxy resin and alicyclic epoxy resin.
72. application as described in claim 71, the epoxy resin that described (b) epoxy equivalent (weight) is 300 ~ 2500 comprise by Epicholorohydrin and at least one be selected from dihydroxyphenyl propane, Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives.
73. application as described in claim 72, described (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise bisphenol f type epoxy resin.
74. application as described in claim 67 or 68, described (b) epoxy equivalent (weight) is total mass 100 mass parts of use level relative to the described adhesive composite contained in described insulativity bond layer of the epoxy resin of 300 ~ 2500, is 5 ~ 50 mass parts.
75. application as described in claim 67 or 68, described (c) potentiality solidifying agent comprises at least a kind that is selected from imidazoles system solidifying agent, hydrazides system solidifying agent, amine imide and dicyanodiamide.
76. application as described in claim 67 or 68, the use level of described (c) potentiality solidifying agent is epoxy resin 100 mass parts of 300 ~ 2500 relative to described (b) epoxy equivalent (weight), is 10 ~ 200 mass parts.
77. application as described in claim 67 or 68, described conducting particles is the particle defining conductting layer on plastics.
78. application as described in claim 67 or 68, the median size of described conducting particles is 1 ~ 10 μm.
79. application as described in claim 67 or 68, the use level of described conducting particles is 0.1 ~ 30 mass parts relative to total mass 100 mass parts of the described adhesive composite contained in described conductive adhesive layer.
80. application as described in claim 67 or 68, described insulativity bond layer and/or described conductive adhesive layer are further containing (d) insulativity particle.
81. application as described in claim 67 or 68, the thickness of described insulativity bond layer is 12 ~ 20 μm.
82. application as described in claim 81, the thickness of described insulativity bond layer is 14 ~ 16 μm.
83. application as described in claim 67 or 68, the thickness of described conductive adhesive layer is 3 ~ 12 μm.
84. application as described in claim 83, the thickness of described conductive adhesive layer is 5 ~ 10 μm.
85. application as described in claim 67 or 68, the thickness of described adhesive film is 10 ~ 40 μm.
86. application as described in claim 67 or 68, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively below 0.2mm.
87. application as described in claim 67 or 68, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.05mm.
88. application as described in claim 87, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.08mm.
89. 1 kinds of adhesive films are used for the application of the manufacture of circuit connecting adhesive film,
Described adhesive film possesses the conductive adhesive layer containing adhesive composite and conducting particles and the insulativity bond layer containing adhesive composite but not containing conducting particles,
Wherein, the adhesive composite contained in described insulativity bond layer comprises (a) film forming material, (b) epoxy equivalent (weight) is 300 ~ 2500 epoxy resin and (c) potentiality solidifying agent,
Described circuit connecting adhesive film makes the 1st circuit block defining the 1st circuit electrode on the interarea that thickness is the glass substrate as the 1st circuit substrate of below 0.3mm, with at thickness be below 0.3mm the 2nd circuit substrate interarea on define the semiconductor element as the 2nd circuit block of the 2nd circuit electrode, make to be electrically connected under the described 1st circuit electrode state relative with described 2nd circuit electrode.
90. application as described in claim 89, described (b) epoxy equivalent (weight) is the epoxy equivalent (weight) of the epoxy resin of 300 ~ 2500 is 350 ~ 2000.
91. application as described in claim 89 or 90, described (a) film forming material comprises at least a kind that is selected from phenoxy resin, vinyl-formal resin, polystyrene resin, polyvinyl butyral resin, vibrin, polyamide resin, xylene resin and urethane resin.
92. application as described in claim 89 or 90, the weight-average molecular weight of described (a) film forming material is 5000 ~ 150000.
93. application as described in claim 89 or 90, (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise be selected from following at least a kind: by Epicholorohydrin be selected from dihydroxyphenyl propane, at least one in Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives, by the one or both in Epicholorohydrin and phenol resol resins and cresol novolac resin the epoxy group(ing) phenolic resin varnish type epoxy resin that derives, there is the naphthalene system epoxy resin containing naphthalene nucleus skeleton, and there is the glycidyl amine type epoxy resin of glycidyl of more than 2 in 1 molecule, diglycidyl ether type epoxy resin, biphenyl type epoxy resin and alicyclic epoxy resin.
94. application as described in claim 93, the epoxy resin that described (b) epoxy equivalent (weight) is 300 ~ 2500 comprise by Epicholorohydrin and at least one be selected from dihydroxyphenyl propane, Bisphenol F and dihydroxyphenyl propane D the bisphenol-type epoxy resin that derives.
95. application as described in claim 94, described (b) epoxy equivalent (weight) be 300 ~ 2500 epoxy resin comprise bisphenol f type epoxy resin.
96. application as described in claim 89 or 90, described (b) epoxy equivalent (weight) is total mass 100 mass parts of use level relative to the described adhesive composite contained in described insulativity bond layer of the epoxy resin of 300 ~ 2500, is 5 ~ 50 mass parts.
97. application as described in claim 89 or 90, described (c) potentiality solidifying agent comprises at least a kind that is selected from imidazoles system solidifying agent, hydrazides system solidifying agent, amine imide and dicyanodiamide.
98. application as described in claim 89 or 90, the use level of described (c) potentiality solidifying agent is epoxy resin 100 mass parts of 300 ~ 2500 relative to described (b) epoxy equivalent (weight), is 10 ~ 200 mass parts.
99. application as described in claim 89 or 90, described conducting particles is the particle defining conductting layer on plastics.
100. application as described in claim 89 or 90, the median size of described conducting particles is 1 ~ 10 μm.
101. application as described in claim 89 or 90, the use level of described conducting particles is 0.1 ~ 30 mass parts relative to total mass 100 mass parts of the described adhesive composite contained in described conductive adhesive layer.
102. application as described in claim 89 or 90, described insulativity bond layer and/or described conductive adhesive layer are further containing (d) insulativity particle.
103. application as described in claim 89 or 90, the thickness of described insulativity bond layer is 12 ~ 20 μm.
104. application as described in claim 103, the thickness of described insulativity bond layer is 14 ~ 16 μm.
105. application as described in claim 89 or 90, the thickness of described conductive adhesive layer is 3 ~ 12 μm.
106. application as described in claim 105, the thickness of described conductive adhesive layer is 5 ~ 10 μm.
107. application as described in claim 89 or 90, the thickness of described adhesive film is 10 ~ 40 μm.
108. application as described in claim 89 or 90, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively below 0.2mm.
109. application as described in claim 89 or 90, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.05mm.
110. application as described in claim 109, the thickness of described 1st circuit substrate and described 2nd circuit substrate is respectively more than 0.08mm.
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