CN102290503B - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN102290503B CN102290503B CN 201110247878 CN201110247878A CN102290503B CN 102290503 B CN102290503 B CN 102290503B CN 201110247878 CN201110247878 CN 201110247878 CN 201110247878 A CN201110247878 A CN 201110247878A CN 102290503 B CN102290503 B CN 102290503B
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- polarity inversion
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Abstract
The invention provides a light emitting diode and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: growing a buffer layer and an epitaxial layer sequentially on a semiconductor substrate by utilizing a metal organic chemical vapor phase deposition technology, wherein the epitaxial layer comprises an N-GaN layer, a quantum well, a P-GaN layer and a polarity inversion layer grown on the P-GaN layer; then protecting a region in which a P electrode is to be manufactured by utilizing a mask technology; corroding the polarity inversion layer out of the P electrode region of a chip until the P-GaN layer; removing the mask layer and forming an epitaxial structure with electric current block; then manufacturing a transparent electric conducting layer, the P electrode and an N electrode; and forming a chip with an electric current block layer structure. The light emitting diode manufactured by the method has the advantages of improved light emitting efficiency and reliable electrode stability.
Description
Technical field
The present invention relates to a kind of light-emitting diode and manufacture method thereof, particularly relate to a kind of Light-emitting Diode And Its Making Method with current barrier layer.
Background technology
Because light-emitting diode (light emitting diode, be called for short LED) possess long service life, power consumption low, need not the warm lamp time, with the reaction time superior performance such as quick, the consumption markets such as display backlight source module, communication, computer, traffic sign and toy have been widely used in, but at present because the inadequate problem of brightness not yet can be widely used in illumination market.In order to solve the inadequate problem of light-emitting diode luminance, the insider is constantly seeking the method that how to improve luminosity.
Common light-emitting diode has been for to have stacked gradually n type semiconductor layer at substrates such as sapphires, quantum well layer, p type semiconductor layer, transparency conducting layer, with the metal N electrode of n type semiconductor layer phase bonding, with the metal P electrode of p type semiconductor layer phase bonding, and the structure of outer mask layer.The problem of at present technology existence is exactly, although the light transmittance with transparency conducting layer promotes greatly, but the light that sends when quantum well layer is during through transparency conducting layer, all reflective light can occur, cause only having the light about 5% to scatter out by the light that quantum well layer produces, remaining light then exhausts in the body of light-emitting diode with the form of heat energy.
Described light-emitting diode is when work, one part of current flows into transparency conducting layer by the P electrode first, flow into p-type semiconductor layer under it via this transparency conducting layer again, p-type semiconductor layer and quantum well layer that another part electric current then flows directly under the P electrode are luminous, but, because the light that the quantum well layer under the P electrode sends can be blocked by this P electrode basically, this part light can be reflected or be absorbed, and the part that is reflected also has sizable part meeting depleted behind chip internal process Multi reflection, can penetrate the few of chip at last, thereby the electric current that has reduced effective luminous zone injects density, has reduced the brightness of chip; And, because there is very large difference in the thermal coefficient of expansion of p type semiconductor layer and bonding metal P electrode thereon, described light-emitting diode is common because the close side-walls electric current gathering of chip when work, cause excessive, the excess Temperature of subregion electric current, very easily cause metal P electrode on chip, to come off and the unsteadiness brought.
Therefore, how to propose a kind of Light-emitting Diode And Its Making Method, eliminating above-mentioned poor adhesion, P electrode extinction, problem that current utilization rate is low, become the problem that the practitioner in the art wants to solve in fact.
Summary of the invention
The problems such as the shortcoming of prior art the object of the present invention is to provide a kind of Light-emitting Diode And Its Making Method in view of the above, and low and electrode stability is poor with the light extraction efficiency that solves light-emitting diode in the prior art.
Reach for achieving the above object other relevant purposes, the invention provides a kind of Light-emitting Diode And Its Making Method, wherein, the manufacture method of described light-emitting diode, at least may further comprise the steps: 1) semi-conductive substrate is provided, utilize the metal organic chemical vapor deposition technology to grow successively resilient coating and epitaxial loayer on described Semiconductor substrate, described epitaxial loayer comprises the N-GaN layer, grows up in the quantum well on the described N-GaN layer, grows up at the P-GaN layer on the described quantum well, reaches the polarity inversion layer of growing up on described P-GaN layer; 2) utilize mask technique, will wish make the zone of P electrode and protect by a mask layer; 3) the described wish of corrosion is made the zone polarity inversion layer in addition of P electrode, until described P-GaN layer; 4) remove described mask layer, to form the epitaxial structure with current barrier layer; And 5) prepare transparency conducting layer and P electrode at described P-GaN layer, prepare the N electrode at described N-GaN layer, form the light-emitting diode with current barrier layer structure.
Step 1 in manufacture method of the present invention) in, the U-GaN layer on described monatomic magnesium layer forms described polarity inversion layer by the monatomic magnesium layer that is formed on described P-GaN layer upper surface and low-temperature epitaxy.The temperature of described polarity inversion layer of growing is 700 ℃-1000 ℃.
Step 2 in manufacture method of the present invention) to step 3) in, the material of described mask layer is SiO
2, SiN or Ag.In concrete execution mode, the material of described mask layer is SiO
2Or during SiN, the etchant solution that corrodes described polarity inversion layer is H
3PO
4Perhaps H
3PO
4With H
2SO
4Mixed solution; When the material of described mask layer is Ag, the etchant solution that corrodes described polarity inversion layer is the mixed solution of KOH or KOH and NaOH, more specifically, the corrosion temperature when corroding described polarity inversion layer is 140 ℃-300 ℃, and etching time is 10 minutes-24 hours.
The present invention also provides a kind of light-emitting diode, it is characterized in that, comprising: Semiconductor substrate, and its upper surface has a resilient coating; Epitaxial loayer, be formed at described resilient coating upper surface, comprise the N-GaN layer, be positioned at quantum well on the described N-GaN layer, be positioned at the P-GaN layer on the described quantum well and be positioned at the current barrier layer that is formed by the polarity inversion layer on the described P-GaN layer, be provided with the P electrode on the described current barrier layer, be provided with the N electrode on the described N-GaN layer; And transparency conducting layer, be formed at the upper of described epitaxial loayer and current barrier layer, and coat described current barrier layer.
In light-emitting diode of the present invention, the U-GaN layer on described monatomic magnesium layer forms described polarity inversion layer by the monatomic magnesium layer that is formed on described P-GaN layer upper surface and low-temperature epitaxy.
As mentioned above, Light-emitting Diode And Its Making Method of the present invention by forming one deck current barrier layer (high-impedance state layer) under the P electrode, injects the mode of density with the electric current that increases chip, has improved the light extraction efficiency of chip; Simultaneously, because should be close for the thermal coefficient of expansion of the thermal coefficient of expansion of the current barrier layer of polarity inversion layer and this P-GaN layer, improved the stability of electrode, and then solved other insulating material that have larger difference in the prior art because of employing and the thermal coefficient of expansion of P-GaN layer, and the problems such as bad stability of the chip electrode that causes.
Description of drawings
Fig. 1 to Fig. 5 is shown as the light-emitting diode cross section structure schematic diagram that presents according to each step in the manufacture method of the present invention.
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, person skilled in the art scholar can understand other advantages of the present invention and effect easily by content disclosed in the present specification.
Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., equal contents in order to cooperate specification to disclose only, understand and reading for person skilled in the art scholar, be not to limit the enforceable qualifications of the present invention, so technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, not affecting under the effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously, that quotes in this specification reaches the term of " " etc. such as " upper surface ", " lower surface ", " left side ", " right side ", " centre ", " two ", also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under without essence change technology contents, when also being considered as the enforceable category of the present invention.
See also Fig. 1 to Fig. 5, be shown as the light-emitting diode cross section structure schematic diagram that presents according to each step in the manufacture method of the present invention.As shown in the figure, the invention provides a kind of manufacture method of light-emitting diode, described manufacture method may further comprise the steps at least:
As shown in Figure 1, at first execution in step 1, semi-conductive substrate 11 is provided, utilize metal organic chemical vapor deposition technology (MOCVD, Metal-organic Chemical Vapor Deposition) grow successively resilient coating 12 and epitaxial loayer 13 on described Semiconductor substrate, described epitaxial loayer 13 comprises N-GaN layer 131, grows up in the quantum well 132 on the described N-GaN layer 131, grows up at the P-GaN layer 133 on the described quantum well 132, reaches the polarity inversion layer 134 of growing up on described P-GaN layer 133.In the present embodiment, described Semiconductor substrate 11 for example is Sapphire Substrate.
In the present embodiment, described polarity inversion layer 134 is comprised of U-GaN on described monatomic magnesium layer of monatomic magnesium (Mg) layer (diagram) that is formed on described P-GaN layer 133 upper surface and low-temperature epitaxy (namely the GaN through mixing) layer (diagram) with not ing, in concrete implementation process, the growth temperature of the described polarity inversion layer of growing is 700 ℃-1000 ℃.Follow execution in step 2.
As shown in Figure 2, in step 2, utilize mask technique, will wish make the zone (zone shown in the arrow P in the diagram) of P electrode and protect by a mask layer 14; In the present embodiment, the material of described mask layer 14 can be SiO
2, SiN or Ag.Follow execution in step 3.
As shown in Figure 3, in step 3, corrode the zone polarity inversion layer 134 in addition that described wish is made the P electrode, until described P-GaN layer 133; To keep the polarity inversion layer 134 that covers with described mask layer 14, in other words, keep the polarity inversion layer 134 that and make the regional corresponding of P electrode with described wish.Particularly, the corrosion temperature when corroding described polarity inversion layer 134 is 140 ℃-300 ℃, and etching time is 10 minutes-24 hours.
Of particular note, the material when described mask layer 14 is SiO
2Or during SiN, the etchant solution that corrodes described polarity inversion layer 134 is H
3PO
4Perhaps H
3PO
4With H
2SO
4Mixed solution.When the material of described mask layer 14 was Ag, the etchant solution that corrodes described polarity inversion layer 134 was the mixed solution of KOH or KOH and NaOH.Follow execution in step 4.
As shown in Figure 4, in step 4, remove described mask layer 14, to form the epitaxial structure with current barrier layer (CBL, Current Blocking Layer), need to prove that described current barrier layer is the polarity inversion layer 134 of reservation.Follow execution in step 5.
As shown in Figure 5, in step 5, prepare transparency conducting layer (TCL, Transparent Contact Layer) 15 and P electrode 16 at described P-GaN layer 133, prepare N electrode 17 at described N-GaN layer 131, form the light-emitting diode 1 with current barrier layer structure.
As from the foregoing, the manufacture method of light-emitting diode of the present invention, under the P of light-emitting diode 1 electrode 16, to add the current barrier layer that one deck is comprised of polarity inversion layer 134, can the current chopping of P-GaN layer 133 will be flowed into by P electrode 16 originally, so that electric current all directly diffuses to effective luminous zone by transparency conducting layer 15, thereby the electric current that has improved effective luminous zone injects density, improved the utilance of electric current, and then the brightness that has improved chip, and, because the thermal coefficient of expansion of polarity inversion layer is close with the thermal coefficient of expansion of this P-GaN layer 133, also improved the stability of electrode.
See also Fig. 5, the present invention also provides a kind of light-emitting diode to comprise: Semiconductor substrate 11, resilient coating 12, epitaxial loayer 13, transparency conducting layer 15 (TCL, Transparent Contact Layer), P electrode 16 and N electrode 17.
The upper surface of described Semiconductor substrate 11 has a resilient coating 12.In the present embodiment, described Semiconductor substrate 11 for example is Sapphire Substrate.
Described epitaxial loayer 13 is formed at described resilient coating 12 upper surfaces, comprise N-GaN layer 131, be positioned at the quantum well 132 on the described N-GaN layer 131, and be positioned at P-GaN layer 133 on the described quantum well 132, and definition has P electrode zone and N electrode zone on the described epitaxial loayer 13, described epitaxial loayer 13 comprises N-GaN layer 131, be positioned at the quantum well 132 on the described N-GaN layer 131, be positioned at the P-GaN layer 133 on the described quantum well 132, and be positioned at the current barrier layer that is formed by polarity inversion layer 134 on the described P-GaN layer 133, be provided with P electrode 16 on the described current barrier layer, be provided with N electrode 17 on the described N-GaN layer 131.
Particularly, described current barrier layer is positioned on the upper surface of P-GaN layer 133 of described epitaxial loayer 13.Described current barrier layer is polarity inversion layer 134, and be provided with P electrode 16 on the described current barrier layer, in the present embodiment, described polarity inversion layer is comprised of U-GaN layer on described monatomic magnesium layer of monatomic magnesium (Mg) layer that is formed on described P-GaN layer 133 upper surface and low-temperature epitaxy (namely through the GaN of doping) with not ing, in the implementation process of the described U-GaN layer of growth, the growth temperature of the described polarity inversion layer of growing is 700 ℃-1000 ℃.
Described transparency conducting layer 15 is formed at the upper of described epitaxial loayer 13 and current barrier layer, and coats described current barrier layer.
Add the current barrier layer that one deck is comprised of the polarity inversion layer under the P electrode 16 of above-mentioned light-emitting diode, can the current chopping of P-GaN layer 133 will be flowed into by P electrode 16 originally, so that electric current all directly diffuses to effective luminous zone by transparency conducting layer 15, thereby the electric current that has improved effective luminous zone injects density, improved the utilance of electric current, and then the brightness that has improved chip, and, because the thermal coefficient of expansion of polarity inversion layer is close with the thermal coefficient of expansion of this P-GaN layer 133, also improved the stability of electrode.
In sum, Light-emitting Diode And Its Making Method of the present invention by forming one deck current barrier layer (high-impedance state layer) under the P electrode, injects the mode of density with the electric current that increases chip, has improved the light extraction efficiency of chip; Simultaneously, because should be close for the thermal coefficient of expansion of the thermal coefficient of expansion of the current barrier layer of polarity inversion layer and this P-GaN layer, improved the stability of electrode, and then solved other insulating material that have larger difference in the prior art because of employing and the thermal coefficient of expansion of P-GaN layer, and the problems such as bad stability of the chip electrode that causes.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (7)
1. the manufacture method of a light-emitting diode is characterized in that, described manufacture method may further comprise the steps at least:
1) provides semi-conductive substrate, utilize the metal organic chemical vapor deposition technology to grow successively resilient coating and epitaxial loayer on described Semiconductor substrate, described epitaxial loayer comprises the N-GaN layer, grows up in the quantum well on the described N-GaN layer, grows up at the P-GaN layer on the described quantum well, reaches the polarity inversion layer of growing up on described P-GaN layer; U-GaN layer on described monatomic magnesium layer forms described polarity inversion layer by the monatomic magnesium layer that is formed on described P-GaN layer upper surface and low-temperature epitaxy;
2) utilize mask technique, will wish make the zone of P electrode and protect by a mask layer;
3) the described wish of corrosion is made the zone polarity inversion layer in addition of P electrode, until described P-GaN layer;
4) remove described mask layer, to form the epitaxial structure with current barrier layer; And
5) prepare transparency conducting layer and P electrode at described P-GaN layer, prepare the N electrode at described N-GaN layer, form the light-emitting diode with current barrier layer structure.
2. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: in described step 1), the temperature of the described polarity inversion layer of growing is 700 ℃-1000 ℃.
3. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: the material of described mask layer is SiO
2, SiN or Ag.
4. the manufacture method of light-emitting diode according to claim 3, it is characterized in that: the material of described mask layer is SiO
2Or during SiN, the etchant solution that corrodes described polarity inversion layer is H
3PO
4Perhaps H
3PO
4With H
2SO
4Mixed solution.
5. the manufacture method of light-emitting diode according to claim 3, it is characterized in that: when the material of described mask layer was Ag, the etchant solution that corrodes described polarity inversion layer was the mixed solution of KOH or KOH and NaOH.
6. according to claim 4 or the manufacture method of 5 described light-emitting diodes, it is characterized in that: in described step 3), the corrosion temperature when corroding described polarity inversion layer is 140 ℃-300 ℃, and etching time is 10 minutes-24 hours.
7. a light-emitting diode is characterized in that, comprising:
Semiconductor substrate, its upper surface has a resilient coating;
Epitaxial loayer, be formed at described resilient coating upper surface, comprise the N-GaN layer, be positioned at quantum well on the described N-GaN layer, be positioned at the P-GaN layer on the described quantum well and be positioned at the current barrier layer that is formed by the polarity inversion layer on the described P-GaN layer, be provided with the P electrode on the described current barrier layer, be provided with the N electrode on the described N-GaN layer; U-GaN layer on described monatomic magnesium layer forms described polarity inversion layer by the monatomic magnesium layer that is formed on described P-GaN layer upper surface and low-temperature epitaxy; And
Transparency conducting layer is formed at the upper of described epitaxial loayer and current barrier layer, and coats described current barrier layer.
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| CN 201110247878 CN102290503B (en) | 2011-08-24 | 2011-08-24 | Light emitting diode and manufacturing method thereof |
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|---|---|---|---|
| CN 201110247878 CN102290503B (en) | 2011-08-24 | 2011-08-24 | Light emitting diode and manufacturing method thereof |
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| CN102290503A CN102290503A (en) | 2011-12-21 |
| CN102290503B true CN102290503B (en) | 2013-05-29 |
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| JP2004128452A (en) * | 2002-07-31 | 2004-04-22 | Shin Etsu Handotai Co Ltd | Method of manufacturing light emitting device, and light emitting device |
| US20090039373A1 (en) * | 2007-07-24 | 2009-02-12 | Toyoda Gosei Co., Ltd. | Group III nitride-based compound semiconductor light emitting device |
| US8399273B2 (en) * | 2008-08-18 | 2013-03-19 | Tsmc Solid State Lighting Ltd. | Light-emitting diode with current-spreading region |
| CN101510580A (en) * | 2009-03-05 | 2009-08-19 | 鹤山丽得电子实业有限公司 | LED with current blocking layer |
| CN102054912A (en) * | 2009-11-04 | 2011-05-11 | 大连路美芯片科技有限公司 | Light emitting diode and manufacture method thereof |
| CN101807650B (en) * | 2010-03-19 | 2017-07-25 | 厦门市三安光电科技有限公司 | Gallium nitride-based high-brightness light-emitting diode and its manufacture craft with distributed Bragg reflecting layer |
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