CN102290380A - Glass protective type diode and manufacturing method thereof - Google Patents

Glass protective type diode and manufacturing method thereof Download PDF

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Publication number
CN102290380A
CN102290380A CN2010102057595A CN201010205759A CN102290380A CN 102290380 A CN102290380 A CN 102290380A CN 2010102057595 A CN2010102057595 A CN 2010102057595A CN 201010205759 A CN201010205759 A CN 201010205759A CN 102290380 A CN102290380 A CN 102290380A
Authority
CN
China
Prior art keywords
diode
glassivation
substrate
glass
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010102057595A
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Chinese (zh)
Inventor
林逸璋
张见清
童钧彦
萧上智
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JINGMAO S&T HOLDINGS CO Ltd
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JINGMAO S&T HOLDINGS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JINGMAO S&T HOLDINGS CO Ltd filed Critical JINGMAO S&T HOLDINGS CO Ltd
Priority to CN2010102057595A priority Critical patent/CN102290380A/en
Publication of CN102290380A publication Critical patent/CN102290380A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3178Coating or filling in grooves made in the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention relates to a glass protective type diode and a manufacturing method thereof; the manufacturing method comprises the following steps of: forming a plurality of staggered grooves on a substrate; forming protective glue layers on the side walls of the staggered grooves and reserving a cutting passage position; heating up a roasting substrate so as to burn off polyester in the protective glue layers and leaving glass powder behind; striking off the glass powder projecting out of the top surface of the substrate; heating up and sintering the glass powder so as to enable the glass powder to form a glass protective layer no higher than the top surface of the substrate, wherein the cutting passage is formed at a place which is not covered by the glass protective layer; obtaining a complete diode when the substrate is cut along the cutting passage; in the diode manufactured by the method, the upper edge of the glass protective layer is no higher than the top surface of the body of the diode, and the glass protective layer is not damaged and maintains the integrality when being cut, thereby providing a good protective effect.

Description

Glass protection formula diode and method for making thereof
Technical field
The present invention relates to a kind of diode and method for making thereof; particularly relating to a kind of its glassivation of glass protection formula diode can not suffer damage at cutting process; the end face that also can not be higher than diode, and the lateral edges of the outer rim of glassivation and this diode body has been kept a distance.
Background technology
With reference to figure 3A, Fig. 3 B; before carrying out a plurality of diode cuttings; at first according to the definition position of diode; etch vertically and a plurality of grooves 101 of horizontal vertical interlaced at a substrate 10; please refer to again shown in Fig. 3 C, for the partial enlarged drawing of this groove 101, for the sidewall of protecting this groove 101 is not subjected to aqueous vapor, heavy metal pollution and ionic pollution with this substrate 10; must be at the attached protective layer that gives of the sidewall of this groove 101, the manufacture method of this protective layer is described in detail as follows conjunction with figs..
Please refer to shown in Fig. 4 A, the one protection glue-line 20 of coating earlier on this substrate 10, this protection glue-line 20 be glass dust 201 and the mixture of polyester, make this protection glue-line 20 be filled in groove 101 inside and cover the end face of substrate 10.
Please refer to shown in Fig. 4 B, utilize an exposure source 30 by 20 exposures of 31 pairs of these protection glue-lines of a light shield.
Please refer to shown in Fig. 4 C, covered by this light shield and unexposed protection glue-line 20 will together be removed by developer solution, stay the protection glue-line 20 that has exposed, this protection glue-line 20 is around the sidewall that forms in this groove 101.
Please refer to shown in Fig. 4 D, this substrate 10 is heated up toast protection glue-line 20, use the polyester compositions in the burn off protection glue-line 20 and only stay glass dust 201.
Please refer to shown in Fig. 4 E; improve heating-up temperature again, make glass dust 201 form a glassivation 202 because of high-temperature fusion, wherein a Cutting Road 103 is formed at and is not subjected to these glassivation 202 coverings place in this groove 101; can cut along this Cutting Road 103 at last, to make diode.
A diode 102 schematic diagrames that Fig. 5 finishes for cutting; this diode 102 comprises a diode body 10a and glassivation 202; this glassivation 202 can form a protuberance 203; this protuberance 203 exceeds the end face of this diode body 10a, the problem yet this protuberance 203 might be derived in follow-up packaging technology.
Please refer to Fig. 6 A, when adopting the forward packaged type, diode 102 is to be bonded on the base 50 with its bottom surface, when an ailhead 40 presses down the end face of this diode 102, because this ailhead 40 and this protuberance 203 and contactless part, this protuberance 203 does not still influence the operation of forward encapsulation.Please refer to Fig. 6 B; but when adopting the negative sense packaged type; this diode 102 must be inverted; this diode 102 is to contact with base 50 with its end face; when ailhead 40 pressed down this diode 102, the protuberance 203 that can cause this glassivation 202 broke because of bearing to damage with the impact pressure of this base 50.
In order to overcome this problem; please refer to Fig. 6 C; the negative sense packaged type need change into and use a base boss 501; the end face of this inverted diode 102 is positioned over carries out packaging operation on this base boss 501 again; but because the part bonding area of this end face is shared by the protuberance 203 of glassivation 202; cause bonding area to dwindle, causing dispelling the heat is difficult for and the forward conducting voltage (Vf) of raising diode.
Form protuberance 203 for fear of this glassivation 202 at the end face of this diode 102; other has a kind of manufacture method of diode; be to fill protection glue-line 20 at the groove 101 of substrate 10 also to form glassivation 202 after the steps such as the aforementioned sintering of process, intensification fusion, the method for making conjunction with figs. of this diode is described below.
Please refer to shown in Fig. 7 A, adopt back of the body butt formula after forming glassivation 202, these substrate 10 bottoms begin cutting certainly, and cutting process terminates in the junction of this substrate 10 and glassivation 202.
Please refer to shown in Fig. 7 B, in the external force mode this glassivation 202 is fractureed along its cut place to form diode 102 again.
With reference to figure 8; be the diode 102 that utilizes aforementioned method for making gained; though the end face of this diode 102 has not had the protuberance 203 of this cover glass layer 202; but because this glassivation 202 is to be fractureed by mechanical type external force; these glassivation 202 planes of disruption will produce glass slight crack 204; this glass slight crack 204 will become the pipeline of this diode 102 of aqueous vapor, ion or heavy metal pollution, and have reliability problems to produce thereupon.
Summary of the invention
The problem that is caused can not be ignored because this glassivation breaks, and therefore the purpose of this invention is to provide a kind of glass protection formula diode and method for making thereof, can avoid glassivation formation protuberance and avoid this glassivation cracked.
For achieving the above object, glass protection formula diode method for making of the present invention comprises following steps:
On a substrate, etch staggered a plurality of grooves;
Coating one protection glue-line on this substrate, wherein this protection glue-line mixture that is glass dust and polyester;
Exposure imaging to be removing unnecessary protection glue-line, and keeps the protection glue-line that is positioned at aforementioned trenched side-wall;
This substrate intensification baking is stayed glass dust with the polyester in this protection glue-line of burn off;
Strike off the glass dust that protrudes from this substrate top surface;
This glass dust of intensification sintering makes it form a glassivation, and wherein, in aforementioned groove, a Cutting Road is formed at not by part that this glassivation covers;
Along this Cutting Road this substrate is cut, to obtain diode.
Glass protection formula diode of the present invention comprises:
One diode body, this diode bodies top have an end face and reach a recess that is positioned at this end face periphery around formation, and these recess outer peripheral edges extend to the lateral edges of this diode body;
One glassivation, around the recess that forms in this diode body, the upper limb of this glassivation is not higher than the end face of this diode body, and the lateral edges of the outer rim of glassivation and this diode body has been kept a distance.
Thus, than known diode and method for making thereof, glass protection formula diode of the present invention comprises following beneficial effect:
A. packaging convenience:, when being inverted this diode and carrying out the negative sense packaging operation, promptly need not the problem of adding a base boss or glassivation collision base taking place because this glassivation upper limb is not higher than the end face of this diode body.
B. improve thermal diffusivity and usefulness: do not take bonding area because the end face of this diode has glassivation, make this diode end face that bigger heat-dissipating space be arranged; Preferable because of thermal diffusivity, diode forward conducting voltage is little than the diode of poor radiation.
C. reliability: this Cutting Road is to be formed at not by part that this glassivation covers, so can't damage this glassivation when this Cutting Road carries out cutting operation, provide effective protection effect with the integrality of keeping this glassivation.
Description of drawings
Figure 1A~1G is a glass protection formula diode method for making schematic flow diagram of the present invention.
Fig. 2 is a glass protection formula diode structure schematic diagram of the present invention.
Fig. 3 A~3B is the known schematic diagram of fabrication technology at a diode base plate etched trench.
Fig. 3 C is the local enlarged diagram of a known diode base plate.
Fig. 4 A~4E is the schematic flow diagram of known diode method for making.
Fig. 5 is the diode schematic diagram with Fig. 4 A~4E method for making gained.
Fig. 6 A~6C is the schematic diagram of different diode package modes.
Fig. 7 A~7B is the method for making schematic flow diagram of another existing diode.
Fig. 8 is the diode schematic diagram with Fig. 7 A~7B method for making gained.
The main element symbol description:
10 substrate 10a diode bodies
10b recess 10c lateral edges
101 grooves, 102 diodes
103 Cutting Roads, 20 protection glue-lines
201 glass dust, 202 glassivations
202a glassivation outer rim 203 protuberances
204 glass slight cracks, 30 exposure sources
31 light shields, 40 ailheads
50 bases, 501 base boss
Embodiment
In order when cutting this diode 102, not damage this glassivation 202; must form a Cutting Road 103; this Cutting Road 103 is to be arranged in this groove 101 not by 202 covered sections of this glassivation; so can guarantee that when this Cutting Road 103 cuts this glassivation 202 is not damaged because of cutting process; and these glassivation 202 unlikely end faces that are higher than this diode body 10a, details are as follows for glass protection formula diode of the present invention and method for making collocation accompanying drawing thereof.
Please refer to shown in Figure 1A, the one protection glue-line 20 of coating earlier on this substrate 10, this protection glue-line 20 be glass dust 201 and the mixture of polyester, make this protection glue-line 20 be filled in groove 101 inside and cover the end face of substrate 10.
Please refer to shown in Figure 1B, utilize an exposure source 30 by 20 exposures of 31 pairs of these protection glue-lines of a light shield.
Please refer to shown in Fig. 1 C; covered by this light shield 31 and unexposed protection glue-line 20 will together be removed by developer solution; stay the protection glue-line 20 that has exposed, this protection glue-line 20 is around the sidewall that forms in this groove 101, and these groove 101 bottoms some not covered by this protection glue-line 20.
Please refer to shown in Fig. 1 D, the left protection glue-line 20 of baking that heats up is used burn off and is protected the polyester compositions in the glue-line 20 and stay glass dust 201.
Please refer to shown in Fig. 1 E, strike off the glass dust 201 that protrudes these substrate 10 end faces,, at first this substrate 10 is inverted in order not allow this glass dust 201 drop in this groove 101 bottoms, strike off the glass dust 201 that protrudes these substrate 10 end faces, drop in this groove 101 bottoms to avoid this glass dust 201.
Please refer to shown in Fig. 1 F; behind the glass dust 201 that strikes off substrate 10 end faces; make its fusion form a glassivation 202 (shown in Fig. 1 G) with this glass dust 201 of sintering these substrate 10 intensifications, wherein a Cutting Road 103 is formed at and is not subjected to this glassivation 202 to cover parts in this groove 101.
Please refer to shown in Fig. 1 G; cut along this Cutting Road 103; obtain a complete diode; because this Cutting Road 103 is to be formed at not by this this glassivation 202 part that covers; can do not caused this glassivation 202 breakages so avoid this glassivation 202 during cutting, the integrality of keeping glassivation 202 is to provide the favorable protection effect.
Fig. 2 is glass protection formula diode 102 structural representations of the present invention, and this diode 102 comprises a diode body 10a and a glassivation 202 that is formed on diode body 10a side.As seen from the figure; this diode body 10a top forms an end face and is positioned at the recess 10b of end face periphery; this recess 10b is surrounded on the lateral edges 10c that peripheral and its outer peripheral edges of this end face extend to diode body 10a; wherein; this glassivation 202 is around the recess 10b that forms in this diode body 10a; these glassivation 202 upper limbs do not exceed the end face of this diode body 10a, and wherein the lateral edges 10c of glassivation outer rim 202a and this diode body 10a has kept a distance.
Because glassivation 202 of the present invention is not higher than this diode 102 end faces; so can't damage this glassivation 202 when adopting the negative sense packaged type; and because this Cutting Road 103 is to be formed at not by this this glassivation 202 part that covers; can do not caused this glassivation 202 breakages so avoid this glassivation 202 during cutting, the lateral edges 10c of the outer rim 202a of glassivation 202 and this diode body 10a has kept a distance.

Claims (5)

1. a glass protection formula diode is characterized in that, includes:
One diode body, this diode bodies top have an end face and reach a recess that is positioned at this end face periphery around formation, and these recess outer peripheral edges extend to the lateral edges of this diode body;
One glassivation, around the recess that forms in this diode body, the upper limb of this glassivation is not higher than the end face of this diode body, and the lateral edges of the outer rim of glassivation and this diode body has been kept a distance.
2. glass protection formula diode according to claim 1 is characterized in that this glassivation is complete crack-free.
3. a glass protection formula diode method for making is characterized in that, comprises following steps:
On a substrate, etch staggered a plurality of grooves;
Coating one protection glue-line on this substrate, wherein this protection glue-line mixture that is glass dust and polyester;
Exposure imaging to be removing unnecessary protection glue-line, and keeps the protection glue-line that is positioned at aforementioned trenched side-wall;
This substrate intensification baking is stayed glass dust with the polyester in this protection glue-line of burn off;
Strike off the glass dust that protrudes from this substrate top surface;
This glass dust of intensification sintering makes it form a glassivation, and wherein, in aforementioned groove, a Cutting Road is formed at not by part that this glassivation covers;
Along this Cutting Road this substrate is cut, to obtain diode.
4. glass protection formula diode method for making according to claim 3 is characterized in that, before striking off the step that protrudes from this substrate top surface glass dust, is to be inverted this substrate earlier to strike off glass dust again.
5. according to claim 3 or 4 described glass protection formula diode method for makings, it is characterized in that, in the step of this exposure imaging, be to use a ultraviolet light source to expose.
CN2010102057595A 2010-06-17 2010-06-17 Glass protective type diode and manufacturing method thereof Pending CN102290380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010102057595A CN102290380A (en) 2010-06-17 2010-06-17 Glass protective type diode and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010102057595A CN102290380A (en) 2010-06-17 2010-06-17 Glass protective type diode and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN102290380A true CN102290380A (en) 2011-12-21

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CN2010102057595A Pending CN102290380A (en) 2010-06-17 2010-06-17 Glass protective type diode and manufacturing method thereof

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335322A (en) * 1992-03-31 1993-12-17 Rohm Co Ltd Manufacture of mesa type semiconductor device
CN101027257A (en) * 2004-09-24 2007-08-29 纳幕尔杜邦公司 Sealing compositions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335322A (en) * 1992-03-31 1993-12-17 Rohm Co Ltd Manufacture of mesa type semiconductor device
CN101027257A (en) * 2004-09-24 2007-08-29 纳幕尔杜邦公司 Sealing compositions

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Application publication date: 20111221