CN102290304A - Carbon nanotube field emission array with focusing gate - Google Patents
Carbon nanotube field emission array with focusing gate Download PDFInfo
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- CN102290304A CN102290304A CN2011102242001A CN201110224200A CN102290304A CN 102290304 A CN102290304 A CN 102290304A CN 2011102242001 A CN2011102242001 A CN 2011102242001A CN 201110224200 A CN201110224200 A CN 201110224200A CN 102290304 A CN102290304 A CN 102290304A
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Abstract
The invention relates to a carbon nanotube field emission array with a focusing gate. The carbon nanotube field emission array comprises a substrate, a bottom gate electrode positioned on the substrate, an insulating layer thin film, a latticed carbon nanotube array serving as a cathode and a point carbon nanotube array serving as a gate; a bottom electrode of the latticed carbon nanotube array cathode is arranged on the insulating layer thin film; the insulating layer thin film is positioned between the bottom electrode of the cathode and the bottom gate electrode; a point carbon nanotube is positioned at the central position of a latticed hole of the latticed carbon nanotube array; and the point carbon nanotube is electrically connected with the bottom gate electrode. In the invention, each carbon nanotube unit in the carbon nanotube array is provided with a focusing electrode to form a field emission cathode with small-diameter emission electron beams. The carbon nanotube field emission array is suitable for field emission devices such as electron sources in an X-ray source, a microwave amplifier, a field emission scanning electron microscope and the like with high requirement for the diameter of electric beams.
Description
Technical field
The present invention relates to a kind of field emission component and preparation method, especially the preparation method of field-transmitting cathode.
Background technology
Carbon nano-tube is one of main material of an emission research at present, has very bright prospect, and each big scientific research institution is all in positive effort, to realize practical application and the industrialization of carbon nano-tube in feds in the world.In present carbon nano-tube and relevant research field thereof, new structure, material and process are still in constantly exploring.Yet on the other hand, existing emissive material, device architecture have all reached tens of kinds more than.For the exploration of the working mechanism of these nano-tube material cold cathodes, for the abundant excavation and the utilization of the potential performance of existing device architecture, still be very important research contents.
In the preparation of high current density feds (for example cold cathode X-ray tube and microwave amplifier), distributing homogeneity and orientation for carbon nano-tube emitting cathode array are had relatively high expectations, and the directional carbon nanotube array negative electrode is because of favorable orientation, and the field emission performance excellence has very big application potential.Yet, research for carbon nano pipe array does not make it obtain practical application widely so far, still have many weak points to inquire into and to improve, the relation of factors such as its electron emissivity and array structure, kind, pattern still need obtain further clear and definite simultaneously.At present, there are following problems in the field emission performance of directional carbon nanotube array: (1) is though document has been reported considerable emission, yet normally on less emission area, obtain, the emission total current is less, a field launched microwave device and an emission x-ray source etc. then require from several square millimeters emission area electric current more than tens and even 100 milliamperes is provided, so present carbon nano pipe array emitting performance still can't satisfy requirement on devices; (2) there are serious problems in launch stability and uniformity, have limited its application in feds; (3) three-stage structure carbon nano pipe array technology still is in the junior stage, and technological level and emitting performance need be improved, and novel projectile configuration still need further be developed.
Up to the present, a lot of researchers have proposed various field emission tripolars or multi-polar structure, and some specifically has been applied on the device, but some also just is in the board design stage.Generally speaking, these structures can be divided into 3 types according to working method: normal grid structure, back grid structure and planar gate.
Planar gate is to utilize to be in conplane grid with negative electrode and to pull out electronics from emitter, and electronics bombards anode and works under anode high voltage then.Canon/Toshiba has released 10 inches surface conductive full color Field Emission Display (Surface conductive Emission Display) [20] in 1997, principle is for being coated with the film that contains PdO between row-column electrode, electronics is attracted by anode high voltage in the process in the narrow more crack of degree, and then the impact fluorescence powder is luminous.This is the initial mask of planar gate modulated structure.Its shortcoming is need reach the required precision of Nano grade to the having relatively high expectations of equipment, and the low 0.5-1% that reaches of electronics utilance needs to improve or compensation in addition.If the raising emissivity then can reduce the cost of drive circuit greatly.The driving voltage of SED is lower than other kinds Field Emission Display relatively, is easy to realize high tonal gradation and full color.SED in 2005 and Canon company unite and have released 36 inches surface conductive displays, anode potential 10kV, and contrast 104:1, picture quality reaches CRT level [21].
Though planar gate preparation technology is simple, its shortcoming place is arranged also.Except the same with the back grid structure, not the having beyond the focusing performance of electron beam is because the preparation of cathode material connects negative electrode and gate electrode easily, if carbon nanotube cathod then will cause negative electrode and gate short.And planar gate also is not applied to the single pixel electron source that is applied to high-power vacuum device at present.
Summary of the invention
The objective of the invention is to overcome deficiency of the prior art, propose a kind of aligned carbon nanotube field emission array of focusing function.Method of the present invention all is provided with a focusing electrode to each carbon nano-tube unit in the carbon nano pipe array, obtains the little field-transmitting cathode of divergent bundle beam diameter.The present invention is applicable to the feds that the electron beam beam diameter is had relatively high expectations, for example, and the electron source in x-ray source, microwave amplifier, the field emission scanning electron microscope etc.
Technical scheme of the present invention is: a kind of carbon nano-tube field emission array that has focus mask comprises
Substrate, be positioned at the grid hearth electrode on the substrate, insulating layer of thin-film, as the latticed carbon nano pipe array of negative electrode, as the point-like carbon nano pipe array of grid, the hearth electrode of latticed carbon nano pipe array negative electrode is on insulating layer of thin-film; Insulating layer of thin-film is between the hearth electrode and grid hearth electrode of negative electrode, and the point-like carbon nano-tube is positioned at the center in the latticed hole of latticed carbon nano pipe array, and the point-like carbon nano-tube links to each other with grid hearth electrode electricity.
The thickness of insulating layer of thin-film is between 100nm to 300nm.
The material of insulating layer of thin-film can be materials such as silicon dioxide, aluminium oxide, silicon nitride.
Grid hearth electrode material is high conductivity material such as heavily doped silicon, silver.
Negative electrode hearth electrode material is high conductivity material such as heavily doped silicon, silver.
The inventive method is realized by following steps:
Step 1, the required catalyst film of preparation preparation carbon nano-tube on electrically-conductive backing plate; The grid of point-like carbon nano pipe array
Step 2, preparation has the insulating layer of thin-film of poroid array on catalyst film, and the circular hole zone does not have insulating barrier;
Step 3 is the center with the aperture on insulating barrier, prepares grid electrode around it, and on electrode the required catalyst film of preparation carbon nano-tube;
Step 4, on the grid electrode and circular hole on the vertical-growth carbon nano pipe array.The height of nano-tube array be 1 micron to 1mm.
Operation principle of the present invention is: the carbon nano-tube on the circular hole is a grid, and the carbon nano-tube on the grid electrode is a cathode emitter, when applying a positive voltage to grid when, electronics comes out from cathode emission, converge to grid, therefore, grid has the electron bunching function.
The invention has the beneficial effects as follows: to each carbon nano-tube unit in the carbon nano pipe array focusing electrode is set all, obtains the little field-transmitting cathode of divergent bundle beam diameter.The present invention is applicable to the feds that the electron beam beam diameter is had relatively high expectations, for example, and the electron source in x-ray source, microwave amplifier, the field emission scanning electron microscope etc.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is a scanning electron microscope image of the present invention.
Specific embodiments
Below embodiments of the invention are elaborated, present embodiment provided detailed execution mode and process, but the scope that the present invention protected is not limited to following embodiment being to implement under the prerequisite with the technical solution of the present invention.
Embodiment, a kind of preparation process of the carbon nano-tube field emission array with focus mask is as follows:
(1) at first with the ultrasonic cleaning two minutes in acetone and IPA respectively of the silicon chip of heavy doping (trivalent or pentad), magnetron sputtering one deck iron thin film on substrate then, thickness is 1nm, is the used catalyst of carbon nano-tube.
(2) in conjunction with photoetching technique, preparation has the insulating barrier (as oxide layer etc.) of array of circular apertures on iron thin film, and the thickness of insulating barrier is 200nm, and the diameter of circular hole is 5um, and the distance between the adjacent circular holes is 10um.
(3) in conjunction with the technique of alignment in the photoetching technique, be the center with the circular hole of array of circular apertures, on insulating barrier circular hole around prepare wire mesh electrode, the width of mesh electrode line is 1nm, thickness is 100nm.And film film such as preparation iron etc. is made catalyst on wire mesh electrode.
(4) adopt the circular hole carbon nano-tube of hot phase chemical deposition method array of circular apertures at last, can obtain structure described in the invention.
Claims (7)
1. a carbon nano-tube field emission array that has focus mask is characterized in that comprising
Substrate, be positioned at the grid hearth electrode on the substrate, insulating layer of thin-film, as the latticed carbon nano pipe array of negative electrode, as the point-like carbon nano pipe array of grid, the hearth electrode of latticed carbon nano pipe array negative electrode is on insulating layer of thin-film; Insulating layer of thin-film is between the hearth electrode and grid hearth electrode of negative electrode, and the point-like carbon nano-tube is positioned at the center in the latticed hole of latticed carbon nano pipe array, and the point-like carbon nano-tube links to each other with grid hearth electrode electricity.
2. the carbon nano-tube field emission array that has focus mask according to claim 1, the thickness that it is characterized in that insulating layer of thin-film is between 100nm to 300nm.
3. the carbon nano-tube field emission array that has focus mask according to claim 1 is characterized in that the material of insulating layer of thin-film can be materials such as silicon dioxide, aluminium oxide, silicon nitride.
4. the carbon nano-tube field emission array that has focus mask according to claim 1 is characterized in that grid hearth electrode material is high conductivity material such as heavily doped silicon, silver.
5. the carbon nano-tube field emission array that has focus mask according to claim 1 is characterized in that negative electrode hearth electrode material is high conductivity material such as heavily doped silicon, silver.
6. the preparation method who has the carbon nano-tube field emission array of focus mask is characterized in that being realized by following steps:
Step 1, the required catalyst film of preparation preparation carbon nano-tube on electrically-conductive backing plate; The grid of point-like carbon nano pipe array
Step 2, preparation has the insulating layer of thin-film of poroid array on catalyst film, and the circular hole zone does not have insulating barrier;
Step 3 is the center with the aperture on insulating barrier, prepares grid electrode around it, and on electrode the required catalyst film of preparation carbon nano-tube;
Step 4, on the grid electrode and circular hole on the vertical-growth carbon nano pipe array.
7. the preparation method who has the carbon nano-tube field emission array of focus mask according to claim 6 is characterized in that concrete steps are:
(1) at first with the ultrasonic cleaning two minutes in acetone and IPA respectively of the silicon chip of heavy doping (trivalent or pentad), magnetron sputtering one deck iron thin film on substrate then, thickness is 1nm, is the used catalyst of carbon nano-tube;
(2) in conjunction with photoetching technique, preparation has the insulating barrier of array of circular apertures on iron thin film, and the thickness of insulating barrier is 200nm, and the diameter of circular hole is 5um, and the distance between the adjacent circular holes is 10um;
(3) in conjunction with the technique of alignment in the photoetching technique, be the center with the circular hole of array of circular apertures, on insulating barrier circular hole around prepare wire mesh electrode, the width of mesh electrode line is 1nm, thickness is 100nm;
(4) adopt the circular hole carbon nano-tube of hot phase chemical deposition method array of circular apertures at last, can obtain structure described in the invention.
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| CN 201110224200 CN102290304B (en) | 2011-08-07 | 2011-08-07 | Carbon nanotube field emission array with focusing gate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102592914A (en) * | 2012-02-28 | 2012-07-18 | 中国科学院上海光学精密机械研究所 | Method for controlling field emission electronic divergence angle by using nano carbon tube |
| CN103779158A (en) * | 2012-10-23 | 2014-05-07 | 上海联影医疗科技有限公司 | Field emission electron source for X-ray tube |
| CN105047504A (en) * | 2015-07-14 | 2015-11-11 | 中国科学院苏州生物医学工程技术研究所 | Field emission cathode based on two-dimensional nanowall |
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| CN101471212A (en) * | 2007-12-29 | 2009-07-01 | 清华大学 | Thermal emission electronic component |
| CN101599495A (en) * | 2008-06-04 | 2009-12-09 | 清华大学 | Thin-film transistor display panel |
| CN101625946A (en) * | 2008-07-09 | 2010-01-13 | 清华大学 | Electronic emission device |
| CN101964291A (en) * | 2009-07-24 | 2011-02-02 | 鸿富锦精密工业（深圳）有限公司 | Micro grid of transmission electron microscope and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101471212A (en) * | 2007-12-29 | 2009-07-01 | 清华大学 | Thermal emission electronic component |
| CN101599495A (en) * | 2008-06-04 | 2009-12-09 | 清华大学 | Thin-film transistor display panel |
| CN101625946A (en) * | 2008-07-09 | 2010-01-13 | 清华大学 | Electronic emission device |
| CN101964291A (en) * | 2009-07-24 | 2011-02-02 | 鸿富锦精密工业（深圳）有限公司 | Micro grid of transmission electron microscope and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102592914A (en) * | 2012-02-28 | 2012-07-18 | 中国科学院上海光学精密机械研究所 | Method for controlling field emission electronic divergence angle by using nano carbon tube |
| CN102592914B (en) * | 2012-02-28 | 2014-10-01 | 中国科学院上海光学精密机械研究所 | Method for controlling field emission electronic divergence angle by using nano carbon tube |
| CN103779158A (en) * | 2012-10-23 | 2014-05-07 | 上海联影医疗科技有限公司 | Field emission electron source for X-ray tube |
| CN103779158B (en) * | 2012-10-23 | 2017-02-15 | 上海联影医疗科技有限公司 | Field emission electron source for X-ray tube |
| CN105047504A (en) * | 2015-07-14 | 2015-11-11 | 中国科学院苏州生物医学工程技术研究所 | Field emission cathode based on two-dimensional nanowall |
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