CN202473821U - Carbon nanotube field emission element with current limiting transistor - Google Patents
Carbon nanotube field emission element with current limiting transistor Download PDFInfo
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- CN202473821U CN202473821U CN2011202840871U CN201120284087U CN202473821U CN 202473821 U CN202473821 U CN 202473821U CN 2011202840871 U CN2011202840871 U CN 2011202840871U CN 201120284087 U CN201120284087 U CN 201120284087U CN 202473821 U CN202473821 U CN 202473821U
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 30
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Abstract
The utility model relates to a carbon nanotube field emission element with a current limiting transistor, comprising a cathode, a grid electrode located below the cathode, and an insulating layer and a semiconductor layer both located between the cathode and the grid electrode, wherein a conductive substrate is used as the grid electrode, on the conductive substrate there is provided the insulating layer, on the insulating layer there is provided a semiconductor film, on the semiconductor film there is provided a grid or annular metal electrode as a cathode, at the center position of the grid or annular hole of the grid or annular metal electrode there is provided a single carbon nanotube growing perpendicular to the substrate, one end of the carbon nanotube is electrically connected with the semiconductor layer, the carbon nanotube is electrically connected with the cathode through the semiconductor layer, the carbon nanotube field emission elements with current limiting transistors are arranged in a plane to form a field emission array, and the electrode is the grid metal electrode. In the carbon nanotube array, each carbon nanotube is serially connected with a current limiting transistor to form a field emission element being large in emission current density and high in emission stability.
Description
Technical field
The utility model relates to a kind of field emission component.
Background technology
CNT is one of main material of an emission research at present, has very bright prospect, and each big scientific research institution is all in positive effort, to realize practical application and the industrialization of CNT in feds in the world.In present CNT and relevant research field thereof, new structure, material and process are still in constantly exploring.Yet on the other hand, existing emissive material, device architecture have all reached tens of kinds more than.For the exploration of the working mechanism of these nano-tube material cold cathodes, for the abundant excavation and the utilization of the potential performance of existing device architecture, still be very important research contents.
In the preparation of high current density feds (for example cold cathode X-ray tube and microwave amplifier); Distributing homogeneity and orientation for CNT emitting cathode array are had relatively high expectations; And the directional carbon nanotube array negative electrode is because of favorable orientation, and the field emission performance excellence has very big application potential.Yet; Research for carbon nano pipe array does not make it obtain practical application widely so far; Still have many weak points to inquire into and to improve, the relation of factors such as its electron emissivity and array structure, kind, pattern still need obtain further clear and definite simultaneously.At present; Some problems below the field emission performance of directional carbon nanotube array exists: (1) is though document has been reported considerable emission; Yet normally on less emission area, obtain; The emission total current is less, and an a launched microwave device and emission x-ray source etc. then requires from several square millimeters emission area electric current more than tens and even 100 milliamperes is provided, so present carbon nano pipe array emitting performance still can't satisfy requirement on devices; (2) there are serious problems in launch stability and uniformity, have limited its application in feds; (3) three-stage structure carbon nano pipe array technology still is in the junior stage, and technological level and emitting performance need be improved, and novel projectile configuration still need further be developed.
Because preparation technology's limitation, even the fluctuatings of existence 5% ~ 10% usually such as the height of emitter and tip curvature radius in the directional carbon nanotube array that the method through accurate control prepares.Because the most advanced and sophisticated electric field strength of autoelectronic current density and emitter is exponential relationship, the emission that different emitters provide in the field emission volume array is very inhomogeneous.Damage at first appears in the emitter that the part current loading is bigger, and then is destroyed owing to vacuum discharge forms whole emitter array.The field emission array size is big more, and the emission inhomogeneities is serious more to the limitation of current loading.For launch stability and the uniformity that improves emission array, people have introduced current-limiting resistance layer (ballast layer) between CNT and underlayer electrode.Yet this still exists significant limitation, and deficiency far away is so that electric current reaches suitable stability.
As the basic original paper of microelectronic component, field-effect transistor can provide stable electric current under certain source-drain voltage, and size of current can accurately be controlled through grid voltage.The more important thing is that when field-effect transistor was operated in the saturation region, electric current reached capacity, the variation with source-drain voltage changes hardly, and saturation current can be also to receive the accurate control of grid voltage.
Therefore; Whether can give all integrated field-effect transistor of each root CNT in the field emission array; And be controlled in the secure transmission electric current of CNT through the saturation current of certain process means with FET; Emission current that so just can each root CNT of balance, and make all CNTs simultaneously in same level emission.Thereby reach the field emission that improves carbon nano pipe array, performances such as stability and life-span.
The research work of passing through the emission of FET controlling filed of document and patent report is mostly to the Field Emission Display aspect at present; Emphasis is to the launch stability and the inhomogeneity control of single FED pixel, and emission current can not be improved accordingly.
Summary of the invention
The purpose of the utility model is to overcome deficiency of the prior art, proposes a kind of current limliting transistorized CNT field emission component, especially performance enhanced carbon nanotube array of having.Each root CNT current limliting transistor of all connecting in the carbon nano pipe array that the utility model proposes, it is big to obtain emission, the feds that launch stability is high.
The utility model technical scheme is: have the transistorized CNT field emission component of current limliting, it is characterized in that comprising insulating barrier and semiconductor layer, electrically-conductive backing plate between negative electrode, the grid below the negative electrode, negative electrode and the grid; It is characterized in that on electrically-conductive backing plate, being provided with insulating barrier, electrically-conductive backing plate is a grid, is semiconductive thin film on insulating barrier; Semiconductive thin film is provided with as the trellis of negative electrode or annular metal electrode; Center in trellis or annular metal electrode trellis or annular aperture is provided with the single-root carbon nano-tube perpendicular to substrate; One end of said CNT links to each other with semiconductor layer electricity, and CNT links to each other with negative electrode electricity through semiconductor layer.The thickness of insulating barrier is between 100nm to 300nm.
The material of insulating barrier can be materials such as silicon dioxide, aluminium oxide, silicon nitride.
Semi-conductive thickness is between the 10nm to 200nm.
Semi-conductive material is polysilicon or monocrystalline silicon, zinc-oxide film etc.
Grid material be electrically-conductive backing plate be high conductivity material such as heavily doped silicon, silver or film, like ito thin film, nickel (Nickel) film.Electrically-conductive backing plate can be grown in the SOI surface.
The trellis of CNT field emission component or ring-type (array is then for netted) electrode is equivalent to source electrode in the FET (source); CNT is equivalent to drain electrode (drain); The electrically-conductive backing plate of bottom is equivalent to back grid (back gate), and the semiconductive thin film between CNT and the mesh electrode is equivalent to raceway groove (channel).
In this structure, because the electric current in the raceway groove is identical with emission current, the emission current of single-root carbon nano-tube must be controlled in below the transistorized saturation current, therefore can be through the saturation emission electric current of grid modulation CNT.The utility model is exactly the purpose that reaches the restriction electric current through FET of each root CNT series connection of giving each unit.Owing to violent emission is burnt, this saturation current must be the safe current value that single-root carbon nano-tube can be stablized emission for fear of CNT.The adjusting of saturation current can realize through the regulation and control grid voltage.
The utility model is realized by following steps:
Step 1 prepares insulating barrier on electrically-conductive backing plate, electrically-conductive backing plate is a grid;
Step 2 prepares semiconductive thin film on insulating barrier;
Step 3, the latticed metal electrode of preparation is negative electrode on semiconductive thin film;
Step 4 is at the single-root carbon nano-tube array of the center of latticed metal electrode mesh preparation perpendicular to the substrate growth.
Particularly, SOI (silicon on the dielectric substrate) material is between at the bottom of top layer silicon and the backing, to have introduced layer of oxide layer.Through on insulator, forming semiconductive thin film.
(1) at the SOI substrate surface latticed metal electrode of growing; At first with the ultrasonic cleaning of SOI substrate, spin coating PMMA electron beam resist on substrate carries out electron beam lithography then, and photoengraving pattern is the round dot of diameter 100nm;
(2) the SOI substrate developing of electron beam lithography forms the photoresist mask with circular hole pattern on the surface of substrate.
(3) method that adopts magnetron sputtering is at SOI substrate surface sputter catalyst layer, form by double-layer films, below one deck be ito thin film, thickness is 20nm; Be nickel (Nickel) film above, thickness is 7nm.
Catalyst layer also can adopt Fe film or Al film, or bilayer film, is the Fe film above.
(4) peel off, the SOI substrate is immersed in the acetone, be left to have the catalyst film of round dot pattern.The photoresist that is not made public in the immersion acetone is just by acetone solution, and the catalyst layer on photoresist surface comes off automatically.So, only be left to have the catalyst film of round dot pattern.
(5) with SOI substrate surface spin coating one deck PMMA again, carry out electron beam lithography, pattern is an annulus, is negative electrode.
(6) after the development, at sample surfaces sputter one deck tungsten (W).
(7) the SOI substrate is immersed in the acetone, just only remaining ring electrode and catalyst sites.
(8) adopt PECVD method carbon nano-tube.
The operation principle of the utility model is:
This utility model is a typical field-effect tube structure in fact: mesh electrode is equivalent to source electrode in the FET (source); CNT is equivalent to drain electrode (drain); The electrically-conductive backing plate of bottom is equivalent to back grid (back gate), and the semiconductive thin film between CNT and the mesh electrode is equivalent to raceway groove (channel).
In this structure, because the electric current in the raceway groove is identical with emission current, the emission current of single-root carbon nano-tube must be controlled in below the transistorized saturation current, therefore can be through the saturation emission electric current of grid modulation CNT.The utility model is exactly through reaching the purpose of restriction electric current for FET of each root CNT series connection.Owing to violent emission is burnt, this saturation current must be the safe current value that single-root carbon nano-tube can be stablized emission for fear of CNT.The adjusting of saturation current can realize through the regulation and control grid voltage.
The utility model beneficial effect is: each root CNT current limliting transistor of all connecting in propose and the carbon nano pipe array, it is big to obtain emission, the feds that launch stability is high.The utility model can be through the saturation emission electric current of grid modulation CNT.Through reaching the purpose of restriction electric current for FET of each root CNT series connection.
Description of drawings
Fig. 1 is the structural representation of the utility model.Upper surface at SOI has prepared ring electrode, and material is tungsten (W).Carbon nano-tube emitter is prepared in the center of ring electrode, and grows perpendicular to substrate surface.This structure is a field emission tripolar construction, is again a field-effect tube structure.
Fig. 2 is the scanning electron microscope image of the utility model.
Specific embodiments
Specify the embodiment of the utility model in conjunction with the drawings; Above-mentioned operation principle of the utility model and advantage will become clearer; In each accompanying drawing: the embodiment to the utility model elaborates; Present embodiment provided detailed execution mode and process, but the scope that the utility model is protected is not limited to following embodiment being to implement under the prerequisite with the utility model technical scheme.
Embodiment: the flow process of carbon nano pipe array that has the current limliting FET based on the SOI substrate preparation is following:
(1) at first with the ultrasonic cleaning two minutes in acetone and IPA respectively of SOI substrate, next spin coating PMMA electron beam resist on substrate carries out electron beam lithography then, and photoengraving pattern is the round dot of diameter 100nm.
(2) substrate sample that will finish electron beam lithography is developed (as insert among the MIBK and develop), has so just formed the photoresist mask with circular hole pattern on the surface of substrate.
(3) method that adopts magnetron sputtering is at sample surfaces sputter catalyst layer, form by double-layer films, below one deck be ito thin film, thickness is 20nm; Be nickel (Nickel) film above, thickness is 7nm.
(4) connect down sample is immersed in the acetone, be left to have the catalyst film of round dot pattern.
(5) after this at sample surfaces spin coating one deck PMMA again, carry out electron beam lithography, current pattern is an annulus.
(6) after the development, at sample surfaces sputter one deck tungsten (W).
(7) sample is got into after the acetone, just only remaining ring electrode and catalyst sites, the i.e. growing point of carbon nano-tube field.
(8) last step is to adopt conventional PECVD method carbon nano-tube.
The ring electrode material: except tungsten, molybdenum, aluminium etc. also can; Catalyst material: except that nickel, iron also can.
The length of side of annular metal electrode is 1 micron-10 microns.
Claims (2)
1. have the transistorized CNT field emission component of current limliting, it is characterized in that comprising insulating barrier and semiconductor layer, electrically-conductive backing plate between negative electrode, grid, negative electrode and the grid below the negative electrode; It is characterized in that on electrically-conductive backing plate, being provided with insulating barrier, electrically-conductive backing plate is a grid, is semiconductive thin film on insulating barrier; Semiconductive thin film is provided with as the trellis of negative electrode or annular metal electrode; Center in trellis or annular metal electrode trellis or annular aperture is provided with the single-root carbon nano-tube perpendicular to substrate; One end of said CNT links to each other with semiconductor layer electricity, and CNT links to each other with negative electrode electricity through semiconductor layer.
2. the transistorized CNT field emission component of current limliting that has as claimed in claim 1, it is characterized in that: the thickness of insulating barrier is between 100nm to 300nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011202840871U CN202473821U (en) | 2011-08-07 | 2011-08-07 | Carbon nanotube field emission element with current limiting transistor |
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| CN2011202840871U CN202473821U (en) | 2011-08-07 | 2011-08-07 | Carbon nanotube field emission element with current limiting transistor |
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| CN202473821U true CN202473821U (en) | 2012-10-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306595A (en) * | 2011-08-07 | 2012-01-04 | 张研 | CNT (carbon nano tube) field emission array with current limiting transistors and preparation thereof |
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2011
- 2011-08-07 CN CN2011202840871U patent/CN202473821U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306595A (en) * | 2011-08-07 | 2012-01-04 | 张研 | CNT (carbon nano tube) field emission array with current limiting transistors and preparation thereof |
| CN102306595B (en) * | 2011-08-07 | 2014-12-17 | 上海康众光电科技有限公司 | CNT (carbon nano tube) field emission array with current limiting transistors and preparation thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI KANGZHONG OPTOELECTRONIC TECHNOLOGY CO., Free format text: FORMER OWNER: ZHANG YAN Effective date: 20130517 Free format text: FORMER OWNER: LI CHI Effective date: 20130517 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 210096 NANJING, JIANGSU PROVINCE TO: 200000 YANGPU, SHANGHAI |
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| TR01 | Transfer of patent right |
Effective date of registration: 20130517 Address after: 200000 room A102, exhibition hall, No. 11 Cathay Pacific Road, Shanghai, Yangpu District Patentee after: Shanghai Kangzhong Optoelectronic Technology Co., Ltd. Address before: 210096 Room 101, display technology research center, four arch 2, Nanjing, Jiangsu Patentee before: Zhang Yan Patentee before: Li Chi |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121003 Termination date: 20200807 |