CN102280870B - Switching circuit board and protection method thereof - Google Patents
Switching circuit board and protection method thereof Download PDFInfo
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- CN102280870B CN102280870B CN201110202010.XA CN201110202010A CN102280870B CN 102280870 B CN102280870 B CN 102280870B CN 201110202010 A CN201110202010 A CN 201110202010A CN 102280870 B CN102280870 B CN 102280870B
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Abstract
The invention discloses a switching circuit board and a protection method thereof and relates to the technical field of manufacture of automatic circuit board measuring instruments. The switching circuit board comprises a protection circuit, a control circuit and a semiconductor analog switch integrated circuit (IC) array, wherein the control circuit is used for controlling the protection circuit and the semiconductor analog switch IC array; the protection circuit is communicated with the semiconductor analog switch IC array; the protection circuit comprises a group of positive discharge units and reverse discharge units, which are correspondingly connected with a testing channel; each positive discharge unit comprises a positive switching diode and a positive discharge diode which are connected; each reverse discharge unit comprises a reverse switching diode and a reverse discharge diode which are connected; an anode of the positive discharge diode and a cathode of the reverse discharge diode are grounded; and the positive discharge diode and the reverse discharge diode are transient voltage suppression diodes. The discharge speed is high, static electricity can be timely fully discharged, and the circuit board is hardly impacted by high surge current so as not to be damaged.
Description
Technical field
The present invention relates to circuit board automatic measurer manufacturing technology field, relate in particular to a kind of commutation circuit plate and guard method thereof.
Background technology
In populated circuit board (PCBA) manufacture process of electronics and IT products, more and more adopt populated circuit board Online Transaction Processing (In-Circuit Test System) to come fast detecting failure components and parts or assembling defect.
In this special inspecting equipment, commutation circuit plate is a vitals, and it is connected between board under test and sensed signal sources and circuit of measurement and control, plays the effect of switch test passage.
Traditional semiconducter simulation switch switching circuit plate; its protection circuit has adopted the IC of thyristor (SCR) array integrated; this structure velocity of discharge is slow; therefore static can not fully be released in time; and withstand current voltage own is low; be subject to surge heavy current impact and damage, thereby cause, protection circuit lost efficacy, semiconducter simulation switch I C burns.The IC cost of in addition, integrated thyristor array is higher.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is: a kind of commutation circuit plate and guard method thereof are provided, and its velocity of discharge is fast, in time abundant static electricity discharge; be not subject to surge heavy current impact and damage; avoid semiconducter simulation switch I C to be burnt, in addition, the present invention also has the feature that cost is low.
(2) technical scheme
For addressing the above problem, the invention provides a kind of commutation circuit plate, comprising: protective circuit, control circuit, semiconducter simulation switch I C array and relay discharge prevention array; Described control circuit is for disconnecting and conducting the relay switch of described protective circuit, and described protective circuit and semiconducter simulation switch I C array are interconnected;
Described protective circuit comprises forward discharge cell and the back discharge unit of one group of connection corresponding to test channel, described forward discharge cell comprises forward switching diode and the forward discharge diode being connected, and described back discharge unit comprises reverser diode and the back discharge diode being connected; The equal ground connection of negative pole of the positive pole of described forward discharge diode and back discharge diode, described forward discharge diode and back discharge diode are transient voltage suppressor diode.
Described relay discharge prevention array comprises one group of relay switch being connected with circuit path, and described circuit path is connected with populated circuit board to be measured, described relay switch under control circuit is controlled with described test channel.
Preferably, described commutation circuit plate also comprises the voltage source being connected respectively with reverser diode with described forward switching diode by relay switch.
Preferably, described relay switch comprises relay switch K1, K2, K3 and K4, wherein, K2, K4 ground connection, K1, K3 connect voltage source.
Preferably, the resistance of described discharge resistance R is 1～100 ohm.
Preferably, described voltage source V+be 5～15V, V-is-10～0V.
A guard method for aforementioned commutation circuit plate, comprises the following steps:
A: control circuit is controlled the relay switch in protective circuit;
B: the electric current that the static on circuit board under test or electric charge form makes forward switching diode or reverser diode current flow by test channel;
C: in forward discharge cell and back discharge unit, forward discharge diode or the back discharge diode discharge corresponding with described forward switching diode or reverser diode, make rapidly voltage stabilization at predetermined clamping voltage.
Preferably, described method also comprises: make the relay switch ground connection in relay discharge prevention array.
Preferably, described steps A, further comprises:
Before test, after test or test intermittently, control circuit makes K2, K4 conducting, K1, K3 disconnect;
When test is carried out, control circuit disconnects K4, K2, K3, K1 conducting.
(3) beneficial effect
The diode array protective circuit adopting in the present invention is by a plurality of diodes or relay switch Share interlinkage transient voltage suppressor diode, taking full advantage of the transient voltage suppressor diode response time is exceedingly fast, transient power is large, leakage current is low, puncture voltage deviation is little, clamping voltage is more easy to control, without damage limit, the advantage that volume is little, guarantee that different test channel time can pass through low resistance resistance common ground discharge prevention in electric discharge, mutually insulated and can be limited in predetermined safe voltage by very fast when test is carried out, thereby effectively protect the electronic circuits such as semiconducter simulation switch I C array, avoid the damage of various surge pulses.Again because diode array protective circuit itself has the non-damageable feature of resistance to large electric current high voltage, and can select the chip component that cost is low, volume is little.So the present invention can better overcome the damage of surge pulse, be a kind of have the protection of high rate discharge more, more cheaply, the commutation circuit plate of high life more.When measuring, because static or the residual charge of board under test obtains more fully releasing fast, therefore also can improve stability and the detection efficiency of measurement.
accompanying drawing explanation
Fig. 1 is the structural representation of commutation circuit plate of the present invention;
Fig. 2 is the guard method flow chart of commutation circuit plate described in the embodiment of the present invention;
Fig. 3 is the circuit structure block diagram of commutation circuit plate described in the embodiment of the present invention;
Fig. 4 is the commutation circuit plate circuit structure block diagram of cancelling the mechanical relay in circuit described in the embodiment of the present invention;
Fig. 5 is the circuit theory diagrams of protective circuit in commutation circuit plate of the present invention.
embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for illustrating the present invention, but are not used for limiting the scope of the invention.
As shown in Figure 1, commutation circuit plate of the present invention, comprising: protective circuit, control circuit and semiconducter simulation switch I C array; Described control circuit is for disconnecting and conducting the relay switch of described protective circuit, and described protective circuit and semiconducter simulation switch I C array are interconnected; Described relay switch comprises relay switch K1, K2, K3 and K4, wherein, K2, K4 ground connection, K1, K3 connect voltage source;
Described protective circuit comprises forward discharge cell and the back discharge unit of one group of connection corresponding to test channel, described forward discharge cell comprises forward switching diode and the forward discharge diode being connected, and described back discharge unit comprises reverser diode and the back discharge diode being connected; The negative pole of the positive pole of described forward discharge diode and back discharge diode is ground connection respectively, and described forward discharge diode and back discharge diode are transient voltage suppressor diode.Described forward switching diode is connected by relay switch with voltage source or low resistance resistance with reverser diode, described low resistance resistance R ground connection.
Preferably; also comprise relay discharge prevention array; described relay discharge prevention array comprises the relay that one group of circuit path being connected with populated circuit board to be measured is connected; described relay is connected with described test channel or discharge resistance R under control circuit is controlled, described discharge resistance ground connection.The resistance of discharge resistance R is 1～100 ohm.
As shown in Figure 2, the guard method of commutation circuit plate of the present invention, comprises the following steps:
A: control circuit is controlled the relay switch in protective circuit;
In this step, before test, after test or test intermittently, control circuit makes K2, K4 conducting, K1, K3 disconnect;
When test is carried out, control circuit disconnects K4, K2, K3, K1 conducting.
B: the electric current that the static on circuit board under test or electric charge form makes forward switching diode or reverser diode current flow by test channel;
C: in forward discharge cell and back discharge unit, forward discharge diode or the back discharge diode discharge corresponding with described forward switching diode or reverser diode, make rapidly voltage stabilization at predetermined clamping voltage.
Preferably, described method also comprises: make the relay switch ground connection in relay discharge prevention array.
As shown in Figure 3, in this measuring instrument, with commutation circuit plate (101 or 102), realize signal source and circuit of measurement and control 12 and be connected with the circuit of populated circuit board 11 to be measured.
Yet populated circuit board 11 to be measured may be with static or remaining electric charge in manufacture process, particularly when populated circuit board is after the functional test powering on, energy-storage travelling wave tube on it is as electric capacity or inductance, and especially large electric capacity stores the electric charge of a large amount of static state.When testing contact connection, be necessary populated circuit board to be measured 11 to make discharge prevention, to reduce, even avoid damaging the IC in commutation circuit plate (101 or 102) semiconductor-on-insulator analog switch IC array 24.
As shown in Figure 3 and Figure 5, S1, S2 ... Sn(n is natural number) be the circuit path being connected with populated circuit board to be measured 11, before test, by control circuit 21, control all relay R L1, RL2 ... RLn, switch and be connected to R1, R2 ... Rn, and R1, R2 ... the resistance value of Rn is 1～100ohm, and with GND () be connected, can realize the heavy-current discharge before test, the discharge period can be tens of milliseconds～tens of seconds.Afterwards, by control circuit 21, control all mechanical relay RL1, RL2 ... RLn switching is connected to SN1, SN2 ... SNn.Also can cancel mechanical relay RL1, the RL2 in circuit herein ... RLn, makes S1, S2 ... Sn(n is natural number) and SN1, SN2 ... SNn directly connects (as Fig. 4).
Control circuit module, is comprised of PLD etc., and its function is to accept the instruction signal of circuit of measurement and control, automatically controls the action of each mechanical relay switch, photo-coupled relay switch, semiconducter simulation switch I C.
Electric discharge or test intermittent discharge after electric discharge before test, test: by control circuit 21 control/DISCHARGE, be that control/TEST of low level is high level, i.e. now K2, K4 conducting and K1, K3 disconnection.The forward conduction voltage drop of supposing diode be VF(for example, the VF of silicon diode is about 0.6～0.8V), the positive and negative surge voltage on passage SN1 is down to after being discharged via DA1, DB1 respectively between-VF～+ VF.SN2 ... SNn is down to after in like manner can being discharged between-VF～+ VF.
The protection of clamper when test is carried out: by control circuit 21 controls/DISCHARGE, be that control/TEST of high level is low level, i.e. now K4, K2 disconnection and K3, K1 conducting.If V1=(V-)-VF, V2=(V+)+VF, the positive and negative voltage on passage SN1 is limited between V1～V2 via DA1, DB1 respectively.SN2 ... SNn in like manner can be limited in sending out between V1～V2.
D108 can adopt transient voltage to suppress (TVS) diode WS10P6SMB, and D109 can adopt transient voltage to suppress (TVS) diode WS5.0P6SMB.The response time of TVS can reach pS (10
-12second) magnitude.It is VEE that the I of supposing the IC in semiconducter simulation switch I C array 24 is born voltage, and maximum can to bear voltage be VDD.
Other passage SN2 is below only described in detail in detail with regard to SN1 passage ... SNn in like manner.
In whole test process, if have in SN1 passage from high voltage static or residual charge on populated circuit board to be measured,, under the effect of positive voltage transient peak pulse current, DA1 is forward conduction state, and two interpolars of transient voltage suppressor diode D108 can be with 10
-12the speed of second-time, from high impedance, become Low ESR, can absorb the upper surge power above up to hundreds of watts from test channel SN1, make the voltage clamping of two interpolars below predetermined maximum clamping voltage, thereby make very fast the lowering of positive voltage between test channel SN1 and GND.
In like manner, under the effect of negative voltage transient peak pulse current, DB1 is forward conduction state, and two interpolars of transient voltage suppressor diode D109 also can be with 10
-12the speed of second-time, becomes Low ESR from high impedance, can absorb the upper surge power above up to hundreds of watts from test channel SN1, makes the voltage clamping of two interpolars below predetermined maximum clamping voltage.Thereby make very fast the lowering of negative voltage between test channel SN1 and GND.
Conventionally the forward conduction time of diode ignores, thus on test channel SN1 too high positive voltage over the ground or too high negative voltage over the ground, all can pass through transient voltage suppressor diode, to be almost 10
-12the very fast clamper of speed of second-time is in predetermined low voltage level.
So the components and parts in electronic circuit as the IC in K1, K2, K3, K4 and power supply V+, V-and semiconducter simulation switch I C array 24 etc., are avoided the damage of various surge pulses near protection effectively.
As previously described, when test is carried out, K4, K2 disconnect and K3, K1 conducting, and the positive and negative surge voltage on passage SN1 is by respectively by DA1 and D108, DB1 and D109, very fast clamper is in predetermined low voltage level, and via K3, K1, is limited between V1～V2 respectively.Wherein, V1=(V-)-VF, V2=(V+)+VF, like this, as long as design makes (V-) >=VEE+VF, (V+)≤VDD-VF, can guarantee that the IC in semiconducter simulation switch I C array 24 can not damage because of overvoltage.In addition; when test; K3, K1 conducting; be power supply V+ and V-also can be respectively via D108 and the very fast clamper of D109 in predetermined normal voltage level, thereby also protection for example, is avoided the high-tension impact failure of surge to other circuit (semiconducter simulation switch I C can power with it) of use power supply V+ and V-.
In sum; the diode protection array protective circuit adopting in the present invention connects transient voltage suppressor diode by numerous diodes or photo-coupled relay switch sharing, can make full use of transient voltage suppressor diode have the response time be exceedingly fast, transient power is large, leakage current is low, puncture voltage deviation is little, clamping voltage is more easy to control, without advantages such as damage limit, volume are little.Guarantee that different test channel time can pass through small resistor R113 or R114 common ground discharge prevention in electric discharge; mutually insulated and can be by the very fast safe voltage level being limited between V1～V2 when test is carried out; thereby effectively protect the electronic circuits such as semiconducter simulation switch I C array, avoid the damage of various surge pulses.Again because diode array protective circuit itself has the non-damageable feature of resistance to large electric current high voltage, and can select the chip component that cost is low, volume is little.
So the present invention can better overcome the damage of surge pulse, be a kind of have the protection of high rate discharge more, more cheaply, the commutation circuit plate of high life more.When measuring, because static or the residual charge of board under test obtains more fully releasing fast, therefore also can improve stability and the detection efficiency of measurement.
Above execution mode is only for illustrating the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (8)
1. a commutation circuit plate, is characterized in that, comprising: protective circuit, control circuit, semiconducter simulation switch I C array and relay discharge prevention array; Described control circuit is for disconnecting and conducting the relay switch of described protective circuit, and described protective circuit and semiconducter simulation switch I C array are interconnected;
Described protective circuit comprises forward discharge cell and the back discharge unit of one group of connection corresponding to test channel, described forward discharge cell comprises forward switching diode and the forward discharge diode being connected, and described back discharge unit comprises reverser diode and the back discharge diode being connected; The equal ground connection of negative pole of the positive pole of described forward discharge diode and back discharge diode, described forward discharge diode and back discharge diode are transient voltage suppressor diode;
Described relay discharge prevention array comprises one group of relay switch being connected with circuit path; described circuit path is connected with populated circuit board to be measured; described relay switch is connected with described test channel or discharge resistance R under control circuit is controlled, described discharge resistance R ground connection.
2. commutation circuit plate as claimed in claim 1, is characterized in that, the resistance of described discharge resistance R is 1～100 ohm.
3. commutation circuit plate as claimed in claim 1, is characterized in that, also comprises the voltage source being connected respectively with reverser diode with described forward switching diode by relay switch.
4. commutation circuit plate as claimed in claim 1, is characterized in that, described relay switch comprises relay switch K1, K2, K3 and K4, wherein, K2, K4 ground connection, K1, K3 connect voltage source.
5. commutation circuit plate as claimed in claim 4, is characterized in that, described voltage source V+and be 5～15V, V-is-10～0V.
6. a guard method for commutation circuit plate described in any one in claim 1-5, is characterized in that, comprises the following steps:
A: control circuit is controlled the relay switch in protective circuit;
B: the electric current that the static on circuit board under test or electric charge form makes forward switching diode or reverser diode current flow by test channel;
C: in forward discharge cell and back discharge unit, forward discharge diode or the back discharge diode discharge corresponding with described forward switching diode or reverser diode, make rapidly voltage stabilization at predetermined clamping voltage.
7. the guard method of commutation circuit plate as claimed in claim 6, is characterized in that, also comprises: make the relay switch ground connection in relay discharge prevention array.
8. the guard method of commutation circuit plate as claimed in claim 6, is characterized in that, described steps A, further comprises:
Before test, after test or test intermittently, control circuit makes K2, K4 conducting, K1, K3 disconnect;
When test is carried out, control circuit disconnects K4, K2, K3, K1 conducting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110202010.XA CN102280870B (en) | 2011-07-19 | 2011-07-19 | Switching circuit board and protection method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110202010.XA CN102280870B (en) | 2011-07-19 | 2011-07-19 | Switching circuit board and protection method thereof |
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| CN102280870A CN102280870A (en) | 2011-12-14 |
| CN102280870B true CN102280870B (en) | 2014-03-12 |
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| CN201110202010.XA Active CN102280870B (en) | 2011-07-19 | 2011-07-19 | Switching circuit board and protection method thereof |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105301381B (en) * | 2014-07-31 | 2019-03-26 | 展讯通信（上海）有限公司 | Automatic surge test system and test method |
| CN106451385B (en) * | 2015-08-06 | 2019-01-01 | 天钰科技股份有限公司 | ESD protection circuit and integrated circuit |
| CN105375456B (en) * | 2015-12-09 | 2017-12-01 | 宁波中荣声学科技有限公司 | Load protection circuit |
| CN106908717A (en) * | 2017-05-09 | 2017-06-30 | 深圳市安硕科技有限公司 | For the on-off circuit and its method of testing of circuit board testing |
| CN108196179A (en) * | 2017-12-05 | 2018-06-22 | 广东欧珀移动通信有限公司 | Printed circuit board, terminal and the circuit testing method based on shared test point |
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| US5633596A (en) * | 1994-01-11 | 1997-05-27 | Key Solutions Ltd. | Fixtureless automatic test equipment and a method for registration for use therewith |
| CN101806857A (en) * | 2010-04-27 | 2010-08-18 | 中国人民解放军总装备部军械技术研究所 | Online fault diagnostic apparatus for circuit board |
| CN101950950A (en) * | 2010-09-20 | 2011-01-19 | 石家庄爱科特科技开发有限公司 | Self-checking protective device of motor before starting |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2622938Y (en) * | 2003-06-05 | 2004-06-30 | 邬益飞 | High voltage preventive protector for communication line |
| US7132876B2 (en) * | 2004-12-28 | 2006-11-07 | Agilent Technologies, Inc. | System for discharging electronic circuitry |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5633596A (en) * | 1994-01-11 | 1997-05-27 | Key Solutions Ltd. | Fixtureless automatic test equipment and a method for registration for use therewith |
| CN101806857A (en) * | 2010-04-27 | 2010-08-18 | 中国人民解放军总装备部军械技术研究所 | Online fault diagnostic apparatus for circuit board |
| CN101950950A (en) * | 2010-09-20 | 2011-01-19 | 石家庄爱科特科技开发有限公司 | Self-checking protective device of motor before starting |
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| CN102280870A (en) | 2011-12-14 |
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Denomination of invention: Switching circuit board and its protection method Effective date of registration: 20220617 Granted publication date: 20140312 Pledgee: Bank of Jiangsu Co.,Ltd. Suzhou Branch Pledgor: Suzhou Winchy Electronic Technology Co.,Ltd. Registration number: Y2022320010252 |
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