CN102280389A - Preparation process for improving encapsulation performance of mono-crystal copper bonding wire - Google Patents
Preparation process for improving encapsulation performance of mono-crystal copper bonding wire Download PDFInfo
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- CN102280389A CN102280389A CN2011101321631A CN201110132163A CN102280389A CN 102280389 A CN102280389 A CN 102280389A CN 2011101321631 A CN2011101321631 A CN 2011101321631A CN 201110132163 A CN201110132163 A CN 201110132163A CN 102280389 A CN102280389 A CN 102280389A
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/745—Apparatus for manufacturing wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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Abstract
The invention relates to a preparation process for improving the encapsulation performance of a mono-crystal copper bonding wire. The preparation process comprises the following steps: 1) forming a tiny mono-crystal copper bonding wire by performing the wiredrawing process for a plurality of times on a mono-crystal copper rod; 2) performing annealing softening treatment on the mono-crystal copper bonding wire which is ultrasonically washed by ethanol; 3) arranging an ethanol cooling tank behind an annealing tube, performing the ethanol rapid cooling treatment on the annealed mono-crystal copper bonding wire; 4) drying the mono-crystal copper bonding wire that is rapidly cooled through the ethanol rapid cooling tank by using an infrared drying device; and 5) rewinding and bundling the dried mono-crystal copper bonding wire, and then packing in vacuum to obtain the mono-crystal copper bonding wire product. The mono-crystal copper bonding wire produced according to the invention can greatly improve the oxidation resistance of the product and guarantees the uniform property and clean and dry surface; and the encapsulation performance of the mono-crystal copper bonding wire product is effectively improved. The method is simple in production process and convenient for operation.
Description
Technical field
The present invention relates to a kind of preparation technology of single-crystal copper bonding wire, be specifically related to a kind of preparation technology who improves single-crystal copper bonding wire product encapsulation performance.
Background technology
Bonding wire is used lead as encapsulation, is one of basic material of producing integrated circuit and semi-conductor discrete device.Along with integrated circuit and semiconductor device develop to encapsulation multileadization, high integration and miniaturization, the common key plying certainly will be to high density, low radian, resistant to elevated temperatures ultra-fine bonding wire development.Single-crystal copper bonding wire because have that purity height, good mechanical properties, electric conductivity excellence, thermal property are outstanding, advantages such as stable performance and low price, can be used for network communication cable, and the fine lead used of microdevice etc. of transfer wire, the high-transmission frequency of production high-fidelity, be widely used.Because the rise of single-crystal copper bonding wire ball bonding technology development, single-crystal copper bonding wire just progressively replaces bonding gold wire to be applied to the integrated circuit encapsulation field, will play more and more important effect in the microelectronics Packaging industry.
The production technology and the process optimization thereof that relate to single-crystal copper bonding wire have caused interest and the concern that people are very big.U.S. Pat 20070169857A1 discloses a kind of production method of monocrystalline copper cash, it is raw material that this method is selected one or more metals in gold, copper, silver, the al and ni for use, behind the heating and melting, with metallic crystal is brilliant source, obtain the monocrystalline copper wire with proper Clusky (Czochralski) method or cloth Ritchie Ma Li (Bridgmari) method, after cutting, moulding, obtain the monocrystalline copper cash again; This patent also adopts analysis means such as resistivity measurement, XRD, GDS, SEM, and the monocrystalline copper cash produced and resistance coefficient, crystal analysis result, results of elemental analyses and the surface topography etc. of common copper cash have been compared in concrete analysis.Domestic patent CN101524721A disclose a kind of be raw material with copper, prepare the little method in outlet footpath through the multiple tracks drawing procedure to the 0.015mm single-crystal copper bonding wire, its flow process is: draw Φ 4-8mm single crystal Cu bar in the directional solidification mode in high vacuum furnace---successively by draw greatly, in wire-drawing process---ethanol ultrasonic cleaning---annealing---the after-combustion bundling that obtains the single crystal Cu microfilament such as draw, draw for a short time, carefully draw; In the method, single-crystal copper bonding wire behind annealed the softening has kept higher temperature, at high temperature easily with airborne oxygen generation oxidation reaction, the oxidation copper film on single crystal Cu surface can reduce the bonding package reliability of product greatly, thereby influences the encapsulation performance of single-crystal copper bonding wire product.During tiny single-crystal copper bonding wire, can take the monocrystalline copper wire cooling after certain measure will anneal as early as possible in production line footpath, then dry, reduce the single-crystal copper bonding wire oxidation to reach, the purpose of raising bonding performance.In the integrated circuit encapsulation, single-crystal copper bonding wire character homogeneous degree, surface cleanness degree etc. are required harshness, the influence of the packaging technology of small particle confrontation single-crystal copper bonding wires such as dust is mainly reflected in: 1) stop up chopper; 2) the bonding wire path pollutes, and influences the balling-up of bonding wire; When 3) contaminant ion content is high, can corrode pad; 4) finely ground particle substance that is attached to the single-crystal copper bonding wire surface might enter in bonding process in the undersized coating layer thickness or between the metal on line, forms pin hole and impurity source and destroys properties of product.In the existing copper wire production technology, often with condensed water cooling copper wire, blowing drying again reaches rapid cooling, reduces the purpose of oxidation.Owing to contain impurity such as lubricant, defoamer in the condensed water, can pollute by the para-linkage silk ribbon; In addition, single crystal Cu silk thread footpath is more tiny, and the blowing drying can cause single-crystal copper bonding wire structural damage, deterioration in quality.
Summary of the invention
At the deficiency in the above-mentioned single-crystal copper bonding wire production process, be issued to the purpose that reduces the oxidation of monocrystalline copper wire, improves its encapsulation performance for reaching the prerequisite that does not influence the single-crystal copper bonding wire properties of product at impurity such as not bringing dust into, the present invention is intended to propose a kind of preparation technology who improves the single-crystal copper bonding wire encapsulation performance.
For reaching above-mentioned purpose, the invention provides a kind of preparation technology who improves the single-crystal copper bonding wire encapsulation performance, the steps include:
1)It is the tiny single-crystal copper bonding wire of 0.01mm～0.5mm that the single crystal Cu bar is formed diameter after by wire-drawing process;
2)To make the annealing softening processed through the single-crystal copper bonding wire after the washing of ethanol ultrasonic cleaner, so that single-crystal copper bonding wire obtains higher Fracture Force and elongation;
3)Single-crystal copper bonding wire after the annealing is passed the ethanol cooling bath do the quench cooled processing, prevent single-crystal copper bonding wire at high temperature with airborne oxygen generation oxidation reaction, reduce the generation of single-crystal copper bonding wire surface film oxide, improve the encapsulation performance of single-crystal copper bonding wire;
4)To carry out dried by the single-crystal copper bonding wire after the ethanol cooling bath quench cooled;
5)With dried single-crystal copper bonding wire after-combustion bundling and vacuum packaging.
Among the present invention, the annealing pipe is set before the ethanol cooling bath, the single-crystal copper bonding wire behind the annealed pipe high annealing is passed the ethanol cooling bath, the single-crystal copper bonding wire after the annealing is carried out quench cooled handle; The arrival end of ethanol cooling bath is provided with at interval with the port of export of annealing pipe; A suction felt is set behind the ethanol cooling bath, behind the suction felt, infrared flash dryer is installed; By felt suction wiping and infra-red heat drying to the single-crystal copper bonding wire surface that enters after-combustion bundling operation clean, drying.
Adopt technique scheme, ethanol cooling bath, infrared flash dryer and powerful suction felt rationally are set in the technological process of single-crystal copper bonding wire production, by being used in combination of they, solved the easy oxidation of product, the monocrystalline copper wire that occur in the existing single-crystal copper bonding wire production process effectively and easily formed blemish, easily bring granule impurity such as dust etc. into and cause the problem that encapsulation performance descends, compared with prior art the present invention has following advantage and effect: the single-crystal copper bonding wire product encapsulation performance that 1. utilizes the present invention to produce is improved significantly; 2. utilize produce single crystal copper bonding wire of the present invention, use the effect that ethanol cooling bath and infra-red drying device reach quick cooling, keep product drying, cleaning, can effectively prevent product oxidation, prevent contaminating impurity and prevent stress distortion and the product that causes is uneven first-class, thereby improve the encapsulation performance of single-crystal copper bonding wire, optimized technological process; 3. technical process of the present invention is simple, easy and simple to handle, and equipment investment, operation, maintenance cost are low.
Description of drawings
Fig. 1 is the structural representation of annealing pipe in the invention process case, ethanol cooling bath, the outer flash dryer setting of felt combinations red.
Accompanying drawing sign among the figure: 1. monocrystalline copper wire; 2. ultrasonic cleaner; 3. annealing is managed; 4. ethanol cooling bath; 5. suction felt; 6. infrared flash dryer.
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
As shown in Figure 1, a kind of preparation technology who improves the single-crystal copper bonding wire encapsulation performance, its concrete processing step is:
1)Wire drawing: it is the tiny single-crystal copper bonding wire 1 of 0.01mm-0.1mm that the single crystal Cu bar is formed diameter after by wire-drawing process.
2)Annealing: will make the annealing softening processed through the single-crystal copper bonding wire after ultrasonic cleaner 2 washings that ethanol is housed, the protective gas of employing is N
2And H
2, 428 ℃ of annealing temperatures, linear velocity 0.9 m/s, time of staying 1.2s
3)Cooling: behind the annealing pipe, the ethanol groove is set, the single-crystal copper bonding wire after behind the high annealing is passed 4 coolings of ethanol groove, to reach the purpose of annealing back quench cooled; After ethanol cooling bath 4 was arranged on annealing pipe 3, ethanol cooling bath 4 arrival ends were 3cm with annealing pipe 3 exit separations; Single-crystal copper bonding wire after the annealing is passed ethanol cooling bath 4 do the quench cooled processing, can effectively prevent single-crystal copper bonding wire 1 at high temperature with airborne oxygen generation oxidation reaction, reduce the generation of surface film oxide in the bonding wire product, improve the encapsulation performance of single-crystal copper bonding wire 1.
4)Dry: that a suction felt 5 is set behind the ethanol cooling bath, behind the suction felt, infrared flash dryer 6 is installed, cooling bath 4 is 3cm with the distance of suction felt 5, infrared flash dryer 6 will pass the single-crystal copper bonding wire of ethanol cooling bath with infrared flash dryer 6 oven dry at suction felt 5 back 5cm; Because ethanol has good volatile performance, the infrared heating drying can be accelerated the ethanol volatilization on single-crystal copper bonding wire surface greatly, the suction felt has strong water absorbing properties, being used in combination of suction felt 5 and infrared flash dryer 6 can guarantee that single-crystal copper bonding wire 1 surface that enters after-combustion bundling operation is fully cleaned, drying.
5)Divide coil packing: dried single-crystal copper bonding wire 1 is obtained the single-crystal copper bonding wire finished product after after-combustion bundling and vacuum packaging.
Through single-crystal copper bonding wire 1 production stage as mentioned above, by being used of ethanol cooling bath 4, suction felt 4 and infrared flash dryer 6, do not use air-dry apparatus, the single-crystal copper bonding wire 1 product encapsulation performance of producing is improved significantly, well solved the easy oxidation of product, the character heterogeneity that occur in existing single-crystal copper bonding wire 1 production process, be subject to encapsulation performance decline problems such as finely ground particle substance pollution such as dust, and technical process is simple, easy and simple to handle, small investment, energy-conserving and environment-protective.
The non-oxidizability of diameter 0.025mm single-crystal copper bonding wire 1 product that existing single-crystal copper bonding wire production method and the inventive method are produced is as shown in table 1; Adopting 100 routine diameters is that 0.025mm single-crystal copper bonding wire product ball is bonded on the golden substrate, and its bond strength performance test data are as shown in table 2.
Table 1 antioxygenic property test data
| ? | Existing preparation technology | Preparation technology of the present invention |
| Anti oxidation time | 90 days | 120 days |
Table 2 monocrystalline copper wire is bonded in lead-in wire pull-off force and the ball shearing force data on the golden substrate
| Existing preparation technology | Preparation technology of the present invention | |
| Wedge bonding point pull-off force mean value | 12.12gf | 14.02gf |
| Ball shearing force mean value | 104.95gf | 106.71gf |
As from the foregoing, the bonding wire product of the single-crystal copper bonding wire preparation technology production of encapsulation performance is carried in the raising of taking this patent to provide, and its anti oxidation time has increased by 30 days, and lead-in wire pull-off force and ball shearing force mean value all get a promotion, and bond strength obviously improves.
Above embodiment is only for the usefulness that the present invention is described, but not limitation of the present invention, those skilled in the art, under the situation that does not break away from the spirit and scope of the present invention, can also make various conversion or variation, therefore, all technical schemes that are equal to also should belong to category of the present invention, are limited by each claim.
Claims (3)
1. a preparation technology who improves the single-crystal copper bonding wire encapsulation performance the steps include:
It is the tiny single-crystal copper bonding wire of 0.01mm～0.5mm that the single crystal Cu bar is formed diameter after by wire-drawing process;
To make the annealing softening processed through the single-crystal copper bonding wire after the washing of ethanol ultrasonic cleaner, so that single-crystal copper bonding wire obtains higher Fracture Force and elongation;
Single-crystal copper bonding wire after the annealing is passed the ethanol cooling bath do the quench cooled processing, prevent single-crystal copper bonding wire at high temperature with airborne oxygen generation oxidation reaction, reduce the generation of single-crystal copper bonding wire surface film oxide, improve the encapsulation performance of single-crystal copper bonding wire;
To carry out dried by the single-crystal copper bonding wire after the ethanol cooling bath quench cooled;
With dried single-crystal copper bonding wire after-combustion bundling and vacuum packaging.
2. a kind of preparation technology who improves the single-crystal copper bonding wire encapsulation performance as claimed in claim 1, it is characterized in that: the annealing pipe is set before the ethanol cooling bath, single-crystal copper bonding wire behind the annealed pipe high annealing is passed the ethanol cooling bath, the single-crystal copper bonding wire after the annealing is carried out quench cooled handle.
3. a kind of preparation technology who improves the single-crystal copper bonding wire encapsulation performance as claimed in claim 1 or 2 is characterized in that: the arrival end of ethanol cooling bath is provided with at interval with the port of export of annealing pipe; A suction felt is set behind the ethanol cooling bath, behind the suction felt, infrared flash dryer is installed; By felt suction wiping and infra-red heat drying to the single-crystal copper bonding wire surface that enters after-combustion bundling operation clean, drying.
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| CN2011101321631A CN102280389A (en) | 2011-05-22 | 2011-05-22 | Preparation process for improving encapsulation performance of mono-crystal copper bonding wire |
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| CN2011101321631A CN102280389A (en) | 2011-05-22 | 2011-05-22 | Preparation process for improving encapsulation performance of mono-crystal copper bonding wire |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105886980A (en) * | 2016-04-12 | 2016-08-24 | 贵研铂业股份有限公司 | New method for solving wire pasting problem of silver and silver alloy bonding wires |
| CN105970131A (en) * | 2016-06-30 | 2016-09-28 | 广州市番禺区鸿力电缆有限公司 | Annealing protecting method of copper conductor used on cable |
| CN107723488A (en) * | 2017-10-09 | 2018-02-23 | 常州帝君金属构件厂 | A kind of preparation method of resistance to oxidation bonding brass wire material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3986378A (en) * | 1970-12-01 | 1976-10-19 | Vladimir Yakovlevich Alekhin | Method of reduction of an oxidized surface of copper or its alloys |
| JP2000034584A (en) * | 1998-07-14 | 2000-02-02 | Mitsubishi Cable Ind Ltd | Rustproofing method of copper wire |
| CN1949493A (en) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | Bonded copper wire and preparing method thereof |
| CN101524721A (en) * | 2008-03-19 | 2009-09-09 | 兰州理工大学 | Method for preparing single-crystal copper bonding wire |
| CN101979689A (en) * | 2010-11-16 | 2011-02-23 | 蔡元华 | Bonding copper wire and preparation method thereof |
-
2011
- 2011-05-22 CN CN2011101321631A patent/CN102280389A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3986378A (en) * | 1970-12-01 | 1976-10-19 | Vladimir Yakovlevich Alekhin | Method of reduction of an oxidized surface of copper or its alloys |
| US3986378B1 (en) * | 1970-12-01 | 1982-11-02 | ||
| JP2000034584A (en) * | 1998-07-14 | 2000-02-02 | Mitsubishi Cable Ind Ltd | Rustproofing method of copper wire |
| CN1949493A (en) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | Bonded copper wire and preparing method thereof |
| CN101524721A (en) * | 2008-03-19 | 2009-09-09 | 兰州理工大学 | Method for preparing single-crystal copper bonding wire |
| CN101979689A (en) * | 2010-11-16 | 2011-02-23 | 蔡元华 | Bonding copper wire and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105886980A (en) * | 2016-04-12 | 2016-08-24 | 贵研铂业股份有限公司 | New method for solving wire pasting problem of silver and silver alloy bonding wires |
| CN105970131A (en) * | 2016-06-30 | 2016-09-28 | 广州市番禺区鸿力电缆有限公司 | Annealing protecting method of copper conductor used on cable |
| CN107723488A (en) * | 2017-10-09 | 2018-02-23 | 常州帝君金属构件厂 | A kind of preparation method of resistance to oxidation bonding brass wire material |
| CN107723488B (en) * | 2017-10-09 | 2019-11-08 | 南理工泰兴智能制造研究院有限公司 | A kind of preparation method of resistance to oxidation bonding brass wire material |
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Application publication date: 20111214 |