CN102280232A - Preparation method for PTC electrode - Google Patents
Preparation method for PTC electrode Download PDFInfo
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- CN102280232A CN102280232A CN 201110143522 CN201110143522A CN102280232A CN 102280232 A CN102280232 A CN 102280232A CN 201110143522 CN201110143522 CN 201110143522 CN 201110143522 A CN201110143522 A CN 201110143522A CN 102280232 A CN102280232 A CN 102280232A
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- ptc
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- ptc sheet
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Abstract
The invention discloses a preparation method for a PTC electrode. The method comprises the following steps: placing a PTC sheet material in a vacuum environment; vaporization coating or sputtering metal particles on the surfaces of two sides of the PTC sheet material to prepare a layer of the electrode layer, wherein the metal particles are heated into mist. With adopting the method provided by the present invention to carry out processing, the bonding strength between the electrode and the PTC sheet material is much higher than the combination strength between the metal foil and the PTC sheet material through hot pressing or hot rolling, such that the contact resistance between the electrode and the PTC sheet material is very small, and is almost close to zero.
Description
Technical field
The present invention relates to the manufacturing process of circuit protection device, relate in particular to the manufacturing process of high molecular PTC electrode.
Background technology
High molecular PTC is a kind of resettable fuse of being processed into through special process by high molecular polymer and conducting particles, and under the normal condition, conducting particles depends on macromolecular chain d and forms chain conductive path, high molecular PTC (resettable fuse) operate as normal; When circuit is short-circuited or transships; the big electric current of high molecular PTC (resettable fuse) of flowing through raises its temperature; when reaching Curie temperature; its density of states reduces rapidly; phase transformation increases; inner conductive path is fracture; high molecular PTC (resettable fuse) is phase step type and adjourns high-impedance state; big electric current is cut off rapidly; thereby circuit is protected, and its small electric current makes high molecular PTC (resettable fuse) be in guard mode always, after outage and fault eliminating; temperature reduces; the density of states increases, and phase transformation is restored, and conducting particles is reduced into the chain conductive path; high molecular PTC (resettable fuse) reverts to normal condition, need not artificial replacing.
During traditional handicraft processing PTC electrode, as shown in Figure 1, 2, adopt technology composite copper foil, nickel foil and the nickel plating Copper Foil of hot pressing or hot rolling electrode on the two sides of PTC sheet material as PTC, PTC sheet material punching out with combination electrode when producing element becomes required form, the lead-in wire (pin) of burn-oning then on electrode.
Yet because the PTC sheet material is to be made by non-polar materials such as polyethylene, the cementability extreme difference of itself and metal, thereby adhesive strength is very high to the requirement of electrode material, the Copper Foil of the common PTC of being used for plate can't reach requirement, it must be extra-high-speed roughness Copper Foil (or nickel foil), this extra-high-speed roughness manufacture of materials technological requirement height is difficult to produce, so electrode quality is a great problem of puzzlement high molecular PTC industry always.
High molecular PTC is used for the environment of low-voltage, big electric current mostly, its resistance had relatively high expectations, and all be the milliohm level a lot.The resistance size of high molecular PTC itself is adjusted by the amounts of carbon black of increase and decrease conduction usefulness, but the resistance between high molecular PTC and the electrode is mainly by adhesive strength decision before them, so two kinds of processing modes shown in Fig. 1,2, can not satisfy the demand of producing high-quality PTC electrode, it is good to need to produce adhesive effect, the production technology of the PTC electrode that contact resistance is little.
Summary of the invention
The technical problem to be solved in the present invention is to realize a kind ofly electrode fully to be contacted the processing method that bonds to the PTC substrate, and the substrate after the processing and the electrode contact resistance is little, adhesive strength is high.
To achieve these goals, the technical solution used in the present invention is: a kind of PTC method for making its electrode is that the PTC sheet material is positioned in the vacuum environment, being heated into vaporific metallic particles evaporation or being splashed to the sheet material both side surface, forms electrode layer.
To process the PTC electrode and carry out radiation treatment.
Describedly be heated into the alloy material that vaporific metal is gold, silver, copper, nickel, tin, aluminium, lead or these metals.
Described electrode layers thickness is 2um-100um.
The preferred 5um-10um of described electrode layers thickness.
Described PTC sheet thickness is 0.25-3.5mm.
The invention has the advantages that and adopt this mode to process that the adhesive strength of electrode and PTC sheet material is higher than metal forming far away and is compounded in intensity on the PTC by hot pressing or hot rolling, thereby the contact resistance between this electrode and the PTC sheet material is very little, almost approaches zero.
Description of drawings
Below the content of each width of cloth accompanying drawing expression of specification of the present invention and the mark among the figure are made brief description:
Fig. 1 is conventional P TC electrode process-pressure sintering;
Fig. 2 sends out for conventional P TC electrode process-continuous calendering;
Fig. 3 is New PTC electrode process-vacuum sputtering;
Embodiment
Referring to Fig. 3 as can be known, the present invention is to the improvement of the preparation for processing of PTC electrode, step 1: PE (basic ethene) is added hot milling with CB (carbon black) and other auxiliary materials in banbury, make the PTC baseplate material;
Step 2: baseplate material is pulled into sheet material in mill, sheet thickness can be made by oneself according to product specification, generally at 0.25-3.5mm;
Step 3: the PTC sheet material is placed in the vacuum tank, and the metal material that melts is atomized in vacuum environment to be invested on the PTC sheet material, generates the fine and close electrode layer uniformly of one deck;
Step 4: the PTC electrode that step 3 is processed carries out radiation treatment;
After finishing above-mentioned steps, electrode is just made and is finished, and just can enter the production of next procedure to electrode.
Wherein, step 3 need add the electrode metal material the vaporific metallic particles of thermosetting, these metal materials can be the alloy materials of gold, silver, copper, nickel, tin, aluminium, lead or these metals, can adopt the mode of evaporation or sputter in vacuum environment, to be attached to the both sides of PTC substrate, adhering to thickness is 2um-100um, preferred 5um-10um.Certainly also depend on the character of electrode material, principle is to reach on the basis of welding requirements, and Bao Yuehao can reduce cost so more.The thickness of control electrode can be realized by time, intensity, the number of times of adjusting vacuum evaporation or sputter.
When evaporation or sputter mode are atomised to metal material on the substrate, can use vacuum coating equipment, the cavity temperature of vacuum need be more than melting point metal.When at present using the vacuum coating equipment evaporation, per minute can electrode evaporation 10um, the evaporation time can be fixed on 5 minutes by the 50um electrode if expect.
Step 4 is the irradiation operation, this procedure was arranged on originally and carried out before the PTC electrode machined electrode layer, after now this step being placed into PTC electrode completion of processing, two kinds of methods do not have influence to the performance of PTC, but the method that the present invention adopts can reduce the irradiation cost greatly.
Experimental results show that: sputtering electrode is higher 2 times than the peel strength of traditional electrode, and welding performance has preferably to be improved.The resistance of PTC reduces 10-20%, resistance change rate decline 5-10%, and homogeneity of product, yields improves.
Claims (6)
1. a PTC method for making its electrode is characterized in that: the PTC sheet material is positioned in the vacuum environment, being heated into vaporific metallic particles evaporation or being splashed to the sheet material both side surface, forms electrode layer.
2. PTC method for making its electrode according to claim 1 is characterized in that: will process the PTC electrode and carry out radiation treatment.
3. PTC method for making its electrode according to claim 1 is characterized in that: describedly be heated into the alloy material that vaporific metal is gold, silver, copper, nickel, tin, aluminium, lead or these metals.
4. PTC method for making its electrode according to claim 1 is characterized in that: described electrode layers thickness is 2um-100um.
5. PTC method for making its electrode according to claim 4 is characterized in that: the preferred 5um-10um of described electrode layers thickness.
6. PTC method for making its electrode according to claim 1 is characterized in that: described PTC sheet thickness is 0.25-3.5mm.
Priority Applications (1)
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CN 201110143522 CN102280232A (en) | 2011-05-31 | 2011-05-31 | Preparation method for PTC electrode |
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CN 201110143522 CN102280232A (en) | 2011-05-31 | 2011-05-31 | Preparation method for PTC electrode |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103021605A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Production method for chip type platinum thermosensitive resistors |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS63312601A (en) * | 1987-06-15 | 1988-12-21 | Tdk Corp | Conductive polymer ptc resistance element and manufacture thereof |
CN1100558A (en) * | 1993-09-17 | 1995-03-22 | 东南大学 | Producing method for linear PTC metal-film thermal resistor |
CN101556852A (en) * | 2009-05-20 | 2009-10-14 | 上海科特高分子材料有限公司 | Macromolecular thermistance element and manufacturing method thereof |
CN101593776A (en) * | 2008-05-31 | 2009-12-02 | 万国半导体股份有限公司 | The self-protection structure and the method for power device with voltage range of expansion |
CN102074325A (en) * | 2011-01-26 | 2011-05-25 | 上海长园维安电子线路保护股份有限公司 | Lateral coating type over-current protection element and manufacturing method thereof |
-
2011
- 2011-05-31 CN CN 201110143522 patent/CN102280232A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63312601A (en) * | 1987-06-15 | 1988-12-21 | Tdk Corp | Conductive polymer ptc resistance element and manufacture thereof |
CN1100558A (en) * | 1993-09-17 | 1995-03-22 | 东南大学 | Producing method for linear PTC metal-film thermal resistor |
CN101593776A (en) * | 2008-05-31 | 2009-12-02 | 万国半导体股份有限公司 | The self-protection structure and the method for power device with voltage range of expansion |
CN101556852A (en) * | 2009-05-20 | 2009-10-14 | 上海科特高分子材料有限公司 | Macromolecular thermistance element and manufacturing method thereof |
CN102074325A (en) * | 2011-01-26 | 2011-05-25 | 上海长园维安电子线路保护股份有限公司 | Lateral coating type over-current protection element and manufacturing method thereof |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103021605A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Production method for chip type platinum thermosensitive resistors |
CN103021605B (en) * | 2012-12-19 | 2016-08-03 | 中国振华集团云科电子有限公司 | Chip type platinum thermal resistor manufacture method |
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Application publication date: 20111214 |