CN102270969A - Light-emitting diode circuit and error amplifier thereof - Google Patents
Light-emitting diode circuit and error amplifier thereof Download PDFInfo
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- CN102270969A CN102270969A CN2010101985801A CN201010198580A CN102270969A CN 102270969 A CN102270969 A CN 102270969A CN 2010101985801 A CN2010101985801 A CN 2010101985801A CN 201010198580 A CN201010198580 A CN 201010198580A CN 102270969 A CN102270969 A CN 102270969A
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Abstract
The invention discloses a light-emitting diode circuit and an error amplifier thereof. The light-emitting diode circuit comprises an inductor, a light-emitting diode group, a power metal oxide semiconductor transistor connected with the inductor, the error amplifier and a pulse width modulator which controls the gate of the power metal oxide semiconductor transistor according to an error amplifier control end. The error amplifier comprises a differential input stage, an output stage and a control switch module, wherein the output stage comprises a first N-type metal oxide semiconductor transistor, a second N-type metal oxide semiconductor transistor, a first P-type metal oxide semiconductor transistor and a second P-type metal oxide semiconductor transistor; and the control switch module connects the first N-type metal oxide semiconductor transistor and a first P-type metal oxide semiconductor transistor and connects the second N-type metal oxide semiconductor transistor and the second P-type metal oxide semiconductor transistor in a first operating mode, and makes the second P-type metal oxide semiconductor transistor and the second N-type metal oxide semiconductor transistor to suppress energy in a second operating mode.
Description
Technical field
Content of the present invention relates to a kind of amplifier, the circuit of LED that particularly relates to a kind of error amplifier and comprise this error amplifier.
Background technology
Light-emitting diode (light emitting diode; LED) compare with traditional bulb illuminations, estimate that its efficient is about four times of conventional bulb.And light-emitting diode does not have traditional bulb and contains poisonous mercury, more has the useful life longer than bulb.Under all factors, light-emitting diode has become the up-to-date mainstream technology of modern illumination science and technology.
For the voltage that makes circuit of LED stable, often by the setting of inductance to achieve the goal.When circuit of LED came into operation, what need was reaction time fast, and entering mode of operation rapidly, and the reaction time will make circuit of LED can produce sizable electric current at short notice fast.Yet the burst current that circuit of LED produced with fast-response time makes above-mentioned inductance bear easily and causes damage.Therefore, if circuit of LED does not have the mechanism of can elasticity adjusting to the reaction time, then inductance will continue to suffer the impact of burst current under mode of operation, and damage easily, and voltage regulation result can't be provided normally.
Therefore, how to design a new circuit of LED and error amplifier thereof, in the reaction time to provide elasticity to adjust, be the industry problem demanding prompt solution.
Summary of the invention
Therefore, an aspect of content of the present invention provides a kind of error amplifier (error amplifier), comprises: differential input level, output stage and control switch module.Differential input level comprises differential output.Output stage comprises: a N type metal oxide semiconductor transistor (NMOS), the first P-type mos transistor (PMOS), the 2nd N type metal oxide semiconductor transistor and the second P-type mos transistor.The one N type metal oxide semiconductor transistor comprises drain electrode and grid, and wherein drain electrode is connected to the error amplifier output and grid is connected to differential output end.The first P-type mos transistor comprises grid and drain electrode, and wherein grid is connected to the grid controller, and drain electrode is connected to a N type metal oxide semiconductor transistor drain.The second P-type mos transistor comprises drain electrode, and wherein drain electrode is connected to the 2nd N type metal oxide semiconductor transistor drain.Wherein in first operator scheme, the control switch module makes the transistorized grid of second P-type mos be connected to the grid controller, makes the transistorized grid of the 2nd N type metal oxide semiconductor be connected to differential output end and makes the second P-type mos transistor drain be connected to the error amplifier output.In second operator scheme, the control switch module makes the second P-type mos transistor and the 2nd N type metal oxide semiconductor transistor, is not connected with grid controller, differential output end and error amplifier output.
According to an embodiment of content of the present invention, in first operator scheme, the control switch module promotes the transconductance value of output stage.In second operator scheme, the control switch module reduces the transconductance value of output stage.
According to another embodiment of content of the present invention, wherein the control switch module comprises: first switch, second switch and the 3rd switch.First switch is connected between the second P-type mos transistor drain and the error amplifier output.Second switch is connected between transistorized grid of second P-type mos and the grid controller.The 3rd switch is connected between transistorized grid of the 2nd N type metal oxide semiconductor and the differential output end.
Another embodiment according to content of the present invention, wherein differential input level also comprises the first input end and second input, first input end is in order to receive reference voltage, second input is in order to receive changing voltage, and wherein differential output end produces differential output voltage according to reference voltage and changing voltage.
According to an embodiment again of content of the present invention, wherein the grid controller is a current source.
Another aspect of content of the present invention provides a kind of light-emitting diode (light emitting diode; LED) circuit comprises: inductance, light-emitting diode group, power MOS transistor, error amplifier and pulse width modulator.Inductance is in order to connect the supply voltage and first end.Light-emitting diode group is connected in first end.Power MOS transistor is connected in first end.Error amplifier comprises: differential input level, output stage and control switch module.Differential input level comprises differential output.Output stage comprises: a N type metal oxide semiconductor transistor, the first P-type mos transistor, the 2nd N type metal oxide semiconductor transistor and the second P-type mos transistor.The one N type metal oxide semiconductor transistor comprises drain electrode and grid, and wherein drain electrode is connected to the error amplifier output and grid is connected to differential output end.The first P-type mos transistor comprises grid and drain electrode, and wherein grid is connected to the grid controller, and drain electrode is connected to a N type metal oxide semiconductor transistor drain.The second P-type mos transistor comprises drain electrode, and wherein drain electrode is connected to the 2nd N type metal oxide semiconductor transistor drain.Wherein in first operator scheme, the control switch module makes the transistorized grid of second P-type mos be connected to the grid controller, makes the transistorized grid of the 2nd N type metal oxide semiconductor be connected to differential output end and makes the second P-type mos transistor drain be connected to the error amplifier output.In second operator scheme, the control switch module makes the second P-type mos transistor and the 2nd N type metal oxide semiconductor transistor, is not connected with grid controller, differential output end and error amplifier output.Pulse width modulator with the power controlling metal oxide semiconductor transistor, thereby carries out charge or discharge to light-emitting diode group in order to produce the switch signal according to the error amplifier output.
According to an embodiment of content of the present invention, in first operator scheme, the control switch module promotes the transconductance value of output stage.In second operator scheme, the control switch module reduces the transconductance value of output stage.
According to another embodiment of content of the present invention, wherein the control switch module comprises: first switch, second switch and the 3rd switch.First switch is connected between the second P-type mos transistor drain and the error amplifier output.Second switch is connected between transistorized grid of second P-type mos and the grid controller.The 3rd switch is connected between transistorized grid of the 2nd N type metal oxide semiconductor and the differential output end.
Another embodiment according to content of the present invention, wherein differential input level also comprises the first input end and second input, first input end is in order to receive reference voltage, second input is in order to receive changing voltage, and wherein differential output end produces differential output voltage according to reference voltage and changing voltage.The feedback voltage of changing voltage for being exported from light-emitting diode group.
Embodiment again according to content of the present invention, when circuit of LED comes into operation, the control switch module operation is in first operator scheme, to promote the transconductance value of output stage, after circuit of LED comes into operation, gap between reference voltage and changing voltage is during less than critical value, and the control switch module operation is in second operator scheme, to reduce the transconductance value of output stage.
An embodiment who has more according to content of the present invention, in the circuit of LED running, when the gap between reference voltage and changing voltage during greater than critical value, the control switch module operation is in first operator scheme, to promote the transconductance value of output stage, when the gap between reference voltage and changing voltage during less than critical value, the control switch module operation is in second operator scheme, to reduce the transconductance value of output stage.
An embodiment who has again according to content of the present invention, when circuit of LED comes into operation, the control switch module operation is in first operator scheme, to promote the transconductance value of output stage, when circuit of LED comes into operation above behind the special time, the control switch module operation is in second operator scheme, to reduce the transconductance value of output stage.
According to an embodiment of content of the present invention, wherein pulse width modulator self-oscillation device receives oscillating voltage, and pulse width modulator comes down to produce the switch signal according to error amplifier output and oscillating voltage.Wherein oscillating voltage is a zigzag waveform voltage.The grid controller is a current source.
The advantage of using content of the present invention is by the control switch module, can be if necessary in changing the configuration of error amplifier between different mode, and then change its transconductance value, and reach above-mentioned purpose easily.
Description of drawings
For the above-mentioned of content of the present invention and other purpose, feature, advantage and embodiment can be become apparent, its description of drawings is as follows:
Fig. 1 is among the embodiment of content of the present invention, the schematic diagram of circuit of LED;
Fig. 2 is among the embodiment of content of the present invention, the more detailed schematic diagram of error amplifier; And
Fig. 3 A and Fig. 3 B illustrate among the embodiment of content of the present invention, under different operation modes, and the schematic diagram of error amplifier.
The reference numeral explanation
1: circuit of LED 10: inductance
120: load 14: the power metal-oxide semiconductor crystal
16: the error amplifier pipe
180: oscillator 18: pulse width modulator
22: output stage 20: differential input level
222: the one P type metal oxides are partly led 220: the one N type metal oxides and are partly led
The body transistor body transistor
226: the two P type metal oxides are partly led 224: the two N type metal oxides and are partly led
The body transistor body transistor
Switch 24 in 260: the first: the grid controller
Switch 262 in 264: the three: second switch
Embodiment
Please refer to Fig. 1.Fig. 1 is among the embodiment of content of the present invention, the schematic diagram of circuit of LED 1.Circuit of LED 1 comprises: inductance 10, light-emitting diode group 12, power MOS transistor 14, error amplifier 16 and pulse width modulator 18.
In present embodiment, circuit of LED 1 also comprises oscillator 180.Oscillator 180 produces the oscillating voltage Vo of zigzag wave mode.Pulse width modulator 18 receives output voltage error amplifier Ve and oscillating voltage Vo simultaneously, and produces the switch signal that has cycle of activity (active period) and close the cycle (inactive period) according to this.The switch signal further is sent to the grid of power MOS transistor 14, with the switch of power controlling metal oxide semiconductor transistor 14, further light-emitting diode group 12 is charged or discharges.
In an embodiment, oscillating voltage Vo keeps identical waveform.Therefore, the cycle of activity of big young pathbreaker's determine switch signal of output voltage error amplifier Ve and the length in the cycle of closing.When the switch signal made power MOS transistor 14 start charge machine-processed, light-emitting diode group 12 was with conducting and luminous.On the contrary, when the switch signal makes power MOS transistor 14 start discharge machine-processed, then light-emitting diode group 12 will close.Therefore, output voltage error amplifier Ve will determine the behavior of charging and discharge, and determine the magnitude of current of first end 11.
When circuit of LED 1 came into operation, what need was reaction time fast, so that circuit of LED 1 enters mode of operation rapidly.By the lifting change rate that improves output voltage error amplifier Ve, can reach the effect of fast-response time.And the reaction time will make circuit of LED 1 can produce sizable electric current at short notice fast.Yet, have the burst current that the circuit of LED 1 of fast-response time is produced, inductance 10 can't be born and cause damage.Therefore, if the error amplifier of the circuit of LED 1 16 pairs of reaction time does not have the mechanism of can elasticity adjusting, and make output voltage error amplifier Ve continue to keep higher lifting change rate, then inductance 10 will continue to suffer burst current under mode of operation, and damage easily, voltage regulation result can't be provided normally.
Please refer to Fig. 2.Fig. 2 is among the embodiment of content of the present invention, error amplifier 16 more detailed schematic diagrames.Error amplifier 16 comprises: differential input level 20, output stage 22 and control switch module.
In present embodiment, the control switch module comprises: first switch 260, second switch 262 and the 3rd switch 264.First switch 260 is connected between the drain electrode and error amplifier output of the second P-type mos transistor 226.Second switch 262 is connected between the grid and grid controller 24 of the second P-type mos transistor 226.The 3rd switch 264 is connected between the grid and differential output end of the 2nd N type metal oxide semiconductor transistor 224.
In present embodiment, the control voltage (not illustrating) with first state and second state is used to control the running of first switch 260, second switch 262 and the 3rd switch 264.Please be simultaneously with reference to Fig. 3 A and Fig. 3 B.Fig. 3 A and Fig. 3 B illustrate among the embodiment of content of the present invention, under different operation modes, and the schematic diagram of error amplifier 16.
In first operator scheme, control voltage is positioned at first state, so that first switch 260, second switch 262 and 264 one-tenth closed conditions of the 3rd switch, further make the grid of the second P-type mos transistor 226 be connected to grid controller 24 by second switch 262, make the grid of the 2nd N type metal oxide semiconductor transistor 224 be connected to differential output end, and make the drain electrode of the second P-type mos transistor 226 be connected to the error amplifier output by first switch 260 by the 3rd switch 264.Fig. 3 A illustrates under first operator scheme, the equivalent circuit diagram of error amplifier 16.By Fig. 3 A as can be known, under first operator scheme, the first P- type mos transistor 222 and 226 parallel connections of the second P-type mos transistor, and a N type metal oxide semiconductor transistor 220 and 224 parallel connections of the 2nd N type metal oxide semiconductor transistor.
In second operator scheme, control voltage is positioned at second state, so that first switch 260, second switch 262 and 264 one-tenth open modes of the 3rd switch, further make the second P-type mos transistor 226 and the 2nd N type metal oxide semiconductor transistor 224, be not connected with grid controller 24, differential output end and error amplifier output.Fig. 3 B illustrates under second operator scheme, the equivalent circuit diagram of error amplifier 16.By Fig. 3 B as can be known, under second operator scheme, the first P-type mos transistor 222 and a N type metal oxide semiconductor transistor 220 are only arranged still in work.
Therefore, after by second mode transitions to the first operator scheme, the transconductance value of the output stage 22 of error amplifier 16 will obtain to promote, and can make the reaction time quick, that is output voltage error amplifier Ve can change fast.And opposite, after by first mode transitions to the second operator scheme, the transconductance value of the output stage 22 of error amplifier 16 will reduce, and the reaction time will be slack-off thereupon also.
In an embodiment, when circuit of LED 1 comes into operation, the control switch module operation is in first operator scheme, to promote the transconductance value of output stage 22, and make error amplifier 16 have the reaction time fast, the output voltage or the electric current of circuit of LED 1 can be increased fast, can be promptly switch to the mode of operation from the initial condition of circuit.When circuit of LED 1 comes into operation above behind the special time, error amplifier 16 is stable to be operated in the mode of operation, then the control switch module will operate in second operator scheme, reducing the transconductance value of output stage 22, and make the voltage of first end 11 or electric current no longer have lifting fast and influence the running of inductance 10.
In another embodiment, when circuit of LED 1 came into operation, the control switch module operation with as previously mentioned, promoted the transconductance value of output stage 22 in first operator scheme.Then, the testing mechanism to reference voltage Vref and feedback voltage Vf will start, and with when the gap between reference voltage Vref and the feedback voltage Vf during less than a critical value, judge that circuit of LED 1 is stable to operate in the mode of operation.Therefore, the control switch module will operate in second operator scheme, to reduce the transconductance value of output stage 22.
In another embodiment of content of the present invention, in circuit of LED 1 running, above-mentioned testing mechanism can carry out constantly.When the gap between reference voltage Vref and feedback voltage Vf during greater than critical value, expression circuit of LED 1 is in an unsure state down.For instance, if feedback voltage Vf is too big or too little concerning normal operating state, then the control switch module will operate in first operator scheme, to promote the transconductance value of output stage 22, promptly reduce or promote the voltage or the electric current of first end 11.And when the gap between reference voltage and changing voltage during less than critical value, judge then that circuit of LED 1 is stable to operate in the mode of operation.Therefore, the control switch module operation is in second operator scheme, to reduce the transconductance value of output stage 22.
Be noted that the rise of output voltage of error amplifier 16 or decline are the size decisions by reference voltage Vref and feedback voltage Vf.For instance, in an embodiment, when feedback voltage Vf greater than reference voltage Vref, then error amplifier 16 reduces output voltage, and when feedback voltage Vf less than reference voltage Vref, then error amplifier 16 raises output voltage.And on the other hand, the electric current and voltage rise and fall rate of circuit of LED also can be by the decision of the size of reference voltage Vref and feedback voltage Vf, that is, change by the transconductance value that changes output stage 22.
Therefore, circuit of LED in the content of the present invention and the error amplifier that is comprised thereof, but provide elasticity to adjust the mechanism in reaction time.By the transconductance value that changes output stage in the error amplifier, the rise of output voltage of error amplifier and rate of descent can switch to suitable numerical value with different situations.Therefore, provide to the curtage of light-emitting diode group and also can adjust thereupon.And provide the inductance of voltage stabilizing also can therefore avoid being damaged in the circuit of LED.
Though content of the present invention discloses as above with execution mode; right its is not in order to limit content of the present invention; those skilled in the art; under the prerequisite of the spirit and scope that do not break away from content of the present invention, can be used for a variety of modifications and variations, so the protection range of content of the present invention is as the criterion with claim of the present invention.
Claims (18)
1. error amplifier comprises:
One differential input level comprises a differential output end;
One output stage comprises:
One the one N type metal oxide semiconductor transistor comprises a drain electrode and a grid, and wherein this drain electrode is connected to an error amplifier output and this grid is connected to this differential output end;
One first P-type mos transistor comprises a grid and a drain electrode, and wherein this grid is connected to a grid controller, and this drain electrode is connected to a N type metal oxide semiconductor transistor drain;
One the 2nd N type metal oxide semiconductor transistor; And
One second P-type mos transistor comprises a drain electrode, and wherein this drain electrode is connected to the 2nd N type metal oxide semiconductor transistor drain; And
One control switch module;
Wherein in one first operator scheme, this control switch module makes transistorized this grid of this second P-type mos be connected to this grid controller, makes transistorized this grid of the 2nd N type metal oxide semiconductor be connected to this differential output end and makes transistorized this drain electrode of this second P-type mos be connected to this error amplifier output;
In one second operator scheme, this control switch module is not connected this second P-type mos transistor and the 2nd N type metal oxide semiconductor transistor with this grid controller, this differential output end and this error amplifier output.
2. error amplifier as claimed in claim 1, wherein in this first operator scheme, this control switch module makes the transistorized grid of this second P-type mos be connected to this grid controller, make the transistorized grid of the 2nd N type metal oxide semiconductor be connected to this differential output end and make this second P-type mos transistor drain be connected to this error amplifier output, to promote the transconductance value of this output stage.
3. error amplifier as claimed in claim 1, wherein in this second operator scheme, this control switch module is not connected this second P-type mos transistor and the 2nd N type metal oxide semiconductor transistor with this grid controller, this differential output end and this error amplifier output, to reduce the transconductance value of this output stage.
4. error amplifier as claimed in claim 1, wherein this control switch module comprises:
One first switch is connected between this second P-type mos transistor drain and this error amplifier output;
One second switch is connected between the transistorized grid of this second P-type mos and this grid controller; And
One the 3rd switch is connected between the transistorized grid of the 2nd N type metal oxide semiconductor and this differential output end.
5. error amplifier as claimed in claim 1, wherein this differential input level also comprises a first input end and one second input, this first input end is in order to receive a reference voltage, this second input is in order to receive a changing voltage, and wherein this differential output end produces a differential output voltage according to this reference voltage and this changing voltage.
6. error amplifier as claimed in claim 1, wherein this grid controller is a current source.
7. circuit of LED comprises:
One inductance is in order to connect a supply voltage and one first end;
One light-emitting diode group is connected in this first end;
One power MOS transistor is connected in this first end;
One error amplifier comprises:
One differential input level comprises a differential output end;
One output stage comprises:
One the one N type metal oxide semiconductor transistor comprises a drain electrode and a grid, and wherein this drain electrode is connected to an error amplifier output and this grid is connected to this differential output end;
One first P-type mos transistor comprises a grid and a drain electrode, and wherein this grid is connected to a grid controller, and this drain electrode is connected to a N type metal oxide semiconductor transistor drain;
One the 2nd N type metal oxide semiconductor transistor;
One second P-type mos transistor comprises a drain electrode, and wherein this drain electrode is connected to the 2nd N type metal oxide semiconductor transistor drain; And
One control switch module, wherein in one first operator scheme, this control switch module makes the transistorized grid of this second P-type mos be connected to this grid controller, makes the transistorized grid of the 2nd N type metal oxide semiconductor be connected to this differential output end and makes this second P-type mos transistor drain be connected to this error amplifier output; In one second operator scheme, this control switch module makes this second P-type mos transistor and the 2nd N type metal oxide semiconductor transistor, is not connected with this grid controller, this differential output end and this error amplifier output; And.
One pulse width modulator is in order to produce a switch signal according to this error amplifier output, to control this power MOS transistor, so that this light-emitting diode group is carried out charge or discharge.
8. circuit of LED as claimed in claim 7, wherein in this first operator scheme, this control switch module makes the transistorized grid of this second P-type mos be connected to this grid controller, make the transistorized grid of the 2nd N type metal oxide semiconductor be connected to this differential output end and make this second P-type mos transistor drain be connected to this error amplifier output, to promote the transconductance value of this output stage.
9. circuit of LED as claimed in claim 7, wherein in this second operator scheme, this control switch module is not connected this second P-type mos transistor and the 2nd N type metal oxide semiconductor transistor with this grid controller, this differential output end and this error amplifier output, to reduce the transconductance value of this output stage.
10. circuit of LED as claimed in claim 7, wherein this control switch module comprises:
One first switch is connected between this second P-type mos transistor drain and this error amplifier output;
One second switch is connected between the transistorized grid of this second P-type mos and this grid controller; And
One the 3rd switch is connected between the transistorized grid of the 2nd N type metal oxide semiconductor and this differential output end.
11. circuit of LED as claimed in claim 7, wherein this differential input level also comprises a first input end and one second input, this first input end is in order to receive a reference voltage, this second input is in order to receive a changing voltage, and wherein this differential output end produces a differential output voltage according to this reference voltage and this changing voltage.
12. circuit of LED as claimed in claim 11, the wherein feedback voltage of this changing voltage for being exported from this light-emitting diode group.
13. circuit of LED as claimed in claim 11, wherein when this circuit of LED comes into operation, this control switch module operation is in this first operator scheme, to promote the transconductance value of this output stage, after this circuit of LED comes into operation, gap between this reference voltage and this changing voltage is during less than a critical value, and this control switch module operation is in this second operator scheme, to reduce the transconductance value of this output stage.
14. circuit of LED as claimed in claim 11, wherein in this circuit of LED running, when the gap between this reference voltage and this changing voltage during greater than a critical value, this control switch module operation is in this first operator scheme, to promote the transconductance value of this output stage, when this gap between this reference voltage and this changing voltage during less than this critical value, this control switch module operation is in this second operator scheme, to reduce the transconductance value of this output stage.
15. circuit of LED as claimed in claim 11, wherein when this circuit of LED comes into operation, this control switch module operation is in this first operator scheme, to promote the transconductance value of this output stage, when this circuit of LED comes into operation above behind the special time, this control switch module operation is in this second operator scheme, to reduce the transconductance value of this output stage.
16. circuit of LED as claimed in claim 7, wherein this pulse width modulator also receives an oscillating voltage from an oscillator, and this pulse width modulator comes down to produce this switch signal according to this error amplifier output and this oscillating voltage.
17. circuit of LED as claimed in claim 16, wherein this oscillating voltage is a zigzag waveform voltage.
18. circuit of LED as claimed in claim 16, wherein this grid controller is a current source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101985801A CN102270969A (en) | 2010-06-04 | 2010-06-04 | Light-emitting diode circuit and error amplifier thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101985801A CN102270969A (en) | 2010-06-04 | 2010-06-04 | Light-emitting diode circuit and error amplifier thereof |
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| CN102270969A true CN102270969A (en) | 2011-12-07 |
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| CN2010101985801A Pending CN102270969A (en) | 2010-06-04 | 2010-06-04 | Light-emitting diode circuit and error amplifier thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5936466A (en) * | 1997-08-04 | 1999-08-10 | International Business Machines Corporation | Differential operational transconductance amplifier |
| CN1819429A (en) * | 2005-02-07 | 2006-08-16 | 崇贸科技股份有限公司 | Flexible starter |
| CN101656534A (en) * | 2008-08-20 | 2010-02-24 | 旭曜科技股份有限公司 | Output-stage circuit and operational amplifier |
-
2010
- 2010-06-04 CN CN2010101985801A patent/CN102270969A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5936466A (en) * | 1997-08-04 | 1999-08-10 | International Business Machines Corporation | Differential operational transconductance amplifier |
| CN1819429A (en) * | 2005-02-07 | 2006-08-16 | 崇贸科技股份有限公司 | Flexible starter |
| CN101656534A (en) * | 2008-08-20 | 2010-02-24 | 旭曜科技股份有限公司 | Output-stage circuit and operational amplifier |
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Application publication date: 20111207 |