CN102269930A - Self-adapting wafer bearing platform for nanoimprint of full wafer - Google Patents
Self-adapting wafer bearing platform for nanoimprint of full wafer Download PDFInfo
- Publication number
- CN102269930A CN102269930A CN 201110266266 CN201110266266A CN102269930A CN 102269930 A CN102269930 A CN 102269930A CN 201110266266 CN201110266266 CN 201110266266 CN 201110266266 A CN201110266266 A CN 201110266266A CN 102269930 A CN102269930 A CN 102269930A
- Authority
- CN
- China
- Prior art keywords
- wafer
- substrate
- template
- self
- fixed pedestal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a self-adapting wafer bearing platform for nanoimprint of a full wafer. The self-adapting wafer bearing platform comprises a fixed foundation bed, a floating base, a vacuum chuck and a vacuum pipeline. The vacuum chuck is fixed on an upper plane of the floating base and the fixed foundation bed is provided with a concave spherical structure; the floating base is provided with a convex spherical structure and semispherical contact is formed between the fixed foundation bed and the floating base. According to the invention, the semispherical contact between the fixed foundation bed and the floating base is matched to result in relative sliding to realize the parallel self-adapting adjustment and the wedged error compensation of a template and a substrate; and vacuum negative pressure is adopted to realize the locking and fixing of the floating base on the fixed foundation bed, keep relative posture between the leveled substrate and the leveled template, and ensure the parallelism between the template and the substrate in the process of imprinting. The platform provided by the invention has the advantages of simple structure, convenience in adjusting, low cost, wide adaptability, high flexibility and the like; and the platform can be applied to the nanoimprint of the full wafer, in particular to nanoimprint technology and equipment of the big-sized full wafer.
Description
Technical field
The present invention relates to a kind of nano impression wafer-supporting platform, relate in particular to a kind of self-adaptation wafer-supporting platform that is applicable to large scale wafer full wafer nanometer stamping and photoetching machine, belong to minute manufacturing and precision machinery technology field.
Background technology
(Nanoimprint Lithography is a kind of brand-new micro-nano patterned method NIL) to nano-imprint lithography, and it is that a kind of stress deformation that uses mould to pass through resist is realized its patterned technology.Compare with other micro-nano manufacture method, NIL has high resolution, Ultra Low Cost and large-duty characteristics, especially has more outstanding advantage in large area micro-nano rice structure and complex three-dimensional micro nano structure manufacture view.The mode of nano-imprint process realization at present mainly contains three kinds of schemes: stepping repeats nano-imprint process, roll extrusion seal technology and full wafer wafer nano impression.The ever-increasing demand of following micro-nano technology to make for large area micro-nano structure, device manufacturings such as high-brightness LED pattern technology, micro lens especially in recent years have more urgent demand for large tracts of land wafer yardstick micro-nano structure.Therefore, the exploitation of full wafer wafer nano-imprint process and equipment has become more and more important and more and more urgent.Be different from the wafer-supporting platform (also becoming the wafer work platform) that existing stepping repeats nano-imprint process and the use of roll extrusion seal technology, full wafer wafer nano impression be by template (mould) simultaneously with whole wafer (substrate) on complete inhomogeneity the contact and impression of resist, a step (single step) is realized duplicating of wafer yardstick large-area graphs.Therefore, the employed wafer-supporting platform of full wafer wafer nano impression is very different at structure, function and form and existing nano-imprint lithography and the used wafer-supporting platform of various other lithographic equipment.
Because the error of nano impression construction machine itself and the out-of-flatness of substrate self (exist warpage and distortion, especially for the LED epitaxial wafer), in the nano impression process, there is not parallel sum of errors wedge shape error, if the nonparallelism sum of errors wedge shape error between substrate and the mould is not compensated, can't guarantee then in moulding process between the template and substrate that uniformity consistency contact the residual layer thickness of acquisition uniformity fully.If template and the nonparallelism that reaches between the substrate surpass certain degree, cause wedge shape to stay the thickness difference of film to surpass the height of impression feature, the failure of figure transfer will be caused, but also the damage of template might be caused.In addition, template and substrate not parallel may cause also that template and substrate produce relative slippage in the nano impression process, and lateral spread takes place, and influences the precision of coining pattern; Template also may damage the impression feature when the demoulding.Therefore, in the nano impression process, must guarantee the depth of parallelism of template and substrate; In addition, repeating nano-imprint process with stepping compares, for full wafer wafer nano impression, keep the depth of parallelism between template and the substrate particularly important, each work step template in each moulding process is relative with the contact area of substrate less because stepping repeats nano-imprint process, yet the area that template and substrate contact simultaneously in the full wafer wafer nano impression process is big (whole wafer area) very, repeating nano-imprint process with the small size stepping compares, full wafer wafer nano impression has the effect that error is amplified, so full wafer wafer nano-imprint process is for keeping the depth of parallelism between template and the substrate that more harsh requirement is arranged.So full wafer wafer nanometer stamping and photoetching machine must have template and the substrate parallel degree is regulated and wedge shape error compensation function.For full wafer wafer nano impression, finish this function by wafer-supporting platform, promptly in moulding process, by regulating the variation of wafer-supporting platform spatial pose, the wedge shape error of compensation template and substrate keeps parallel between template and the substrate, avoids producing between them relatively laterally slip.Realize that uniformity consistency contact the residual layer thickness of acquisition uniformity between template and the substrate.In full wafer wafer embossed region, realize Hi-Fi figure transfer and duplicate.
The method that realizes template and adjustment of substrate parallel degree and wedge shape error by wafer-supporting platform has two kinds: passive adjustment (also being called the self-adaptation adjustment) and ACTIVE CONTROL adjustment.The self-adaptation adjustment is to utilize the flexibility of mechanism self to come the nonparallelism of passive adaptation template and substrate, when force of impression by template action on substrate the time, the wafer-supporting platform of carrying substrates can produce corresponding minor rotation, and compensation wedge shape error makes whole substrate stressed evenly.And this small rotation can adapt to by the flexibility of mechanism self.The method of self-adaptation adjustment mainly contains: flexure hinge mechanism, resiliency supported, universal float ball, wedge shape compensating module etc., the self-adaptation adjustment has significant advantage simple in structure, easy to adjust, that cost is low.The ACTIVE CONTROL adjustment is position and the nonparallelism that detects template and substrate by measuring system, according to the result of feedback, initiatively adjusts pose between template and the substrate, realization positioned parallel between the two by executive component.ACTIVE CONTROL has the precision of adjustment height, swift remarkable advantage, but the cost height, and control is complicated.
Summary of the invention
Purpose of the present invention is exactly in order to solve in the full wafer wafer nano impression process not parallel between the substrate and template and to have the problem of wedge shape error, provide a kind of self-adaptation wafer-supporting platform that is applicable to full wafer wafer nano impression, to realize parallel adjustment and wedge shape error compensation between substrate and the template.
To achieve these goals, the present invention takes following technical solution:
A kind of self-adaptation wafer-supporting platform that is applicable to full wafer wafer nano impression comprises: fixed pedestal, float base, vacuum cup and vacuum line, and wherein, unsteady base is positioned on the fixed pedestal; Vacuum cup is by the last plane of screw retention in the base that floats, and vacuum cup is in order to place and fixed substrate (wafer); Be provided with horizontal pipeline in the fixed pedestal, vacuum line comprises vacuum line I and vacuum line II, and vacuum cup is provided with horizontal air intake opening; Horizontal pipeline links to each other with vacuum line I, and horizontal air intake opening links to each other with vacuum line II.
Described fixed pedestal has the spill spherical structure, and unsteady base has the convex spherical structure, is the semisphere contact matching between fixed pedestal and the unsteady base.By between fixed pedestal and the unsteady base being spherical contact matching realization template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error.
Also be provided with vertical duct in the described fixed pedestal, fixed pedestal central authorities are provided with central circular through hole, and the central circular through hole below is provided with interior manhole, and interior manhole communicates with central circular through hole, horizontal pipeline and vertical duct respectively; Vertical duct topmost communicates with the spill spherical structure, and vertical duct communicates with interior manhole bottom.
Principle of work of the present invention is: realize template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error by the spherical contact matching between fixed pedestal and the unsteady base; Subsequently, adopt the negative pressure of vacuum locking of base on fixed pedestal and fixing that realizes floating, keep the relative pose between leveling meron and the template, guarantee in moulding process parallel between the template and substrate to keep homogeneity.
During application, by opening vacuum line I, under the effect of negative pressure of vacuum, the locking of base on fixed pedestal and fixing realizes floating after the leveling, and keep relative pose between leveling meron and the template, guarantee being parallel to each other between the template and substrate in moulding process.By opening vacuum line II, the gas pressure intensity that vacuum cup produces between two planes up and down of substrate is poor, realizes under suction function the clamping of substrate and fixing.The negative pressure that whole wafer-supporting platform system produces by vacuum line realizes the locking of fixed pedestal and unsteady base after the leveling and fixing, and substrate fixing on vacuum cup.
The full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for of the present invention, be provided with bigger central circular through hole in fixed pedestal central authorities, reduce the contact area between fixed pedestal and the unsteady base on the one hand, thereby the friction force when reducing the self-adaptation adjustment, make both be easy to produce relative slip or rotation, thereby the wedge shape error between template and the substrate is fully compensated; On the other hand, increase locking and the absorption affinity fixedly the time, avoid in moulding process, occurring sliding relatively between the fixed pedestal and unsteady base.
Adopt the full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for of the present invention to realize that the method for substrate and leveling of template self-adaptation and wedge shape error compensation is:
(1) substrate is placed on the vacuum cup, opens the vacuum line system of vacuum cup, vacuum cup is realized the clamping of substrate under suction function by the gas pressure intensity difference that produces between two planes up and down of substrate and is fixed;
(2) imprint head presses down, and template contacts with substrate, and along with the continuous increase of force of impression, fixed pedestal and unsteady base are realized template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error by spherical contact matching;
(3) force of impression increases to maximum, and keeps maximum force of impression constant, postpones to realize template and the complete parallel self-adaptation adjustment of substrate by 2-5s;
(4) the vacuum line system on the unlatching fixed pedestal, under the effect of negative pressure of vacuum, the locking of base on fixed pedestal and fixing of realize floating keeps the relative pose between leveling meron and the template, guarantees in moulding process parallel between the template and substrate.
The full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for of the present invention is used for full wafer wafer nano impression, also can be used for the bonding machine, realizes the wafer scale bonding, has following beneficial effect:
(1) simple in structure, easy to adjust, cost is low.
(2) complete wedge shape error compensation: reduce contact area owing to be provided with bigger central circular through hole in fixed pedestal central authorities, fixed pedestal is rolling friction with spherical contact of unsteady base in addition, therefore has very less friction between fixed pedestal and the unsteady base, be easy to produce relative slip and rolling, so compensation is abundant and complete.
(3) adopt negative pressure of vacuum locking and fixing between fixed pedestal and the unsteady base, have simply fast, precision is higher, is convenient to operation, and economic low advantage.
(4) wide adaptability of system, flexible high, along with the difference of wafer size, whole wafer-supporting platform system mobility is little, can adapt to the requirement of different wafer size full wafer wafer nano-imprint process.
(5) the full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for of the present invention especially is fit to large scale wafer full wafer nano impression, for the exploitation of large scale wafer full wafer nano-imprint process and equipment provides a kind of effective solution.
Description of drawings
Fig. 1 is the structural representation that is used for full wafer wafer nano impression self-adaptation wafer-supporting platform among the embodiment.
Fig. 2 is the three-dimensional structure synoptic diagram that is used for full wafer wafer nano impression self-adaptation wafer-supporting platform among the embodiment.
Fig. 3 a is the three-dimensional structure synoptic diagram of fixed pedestal among the embodiment.
Fig. 3 b is the three-dimensional structure cross-sectional schematic of fixed pedestal among the embodiment.
Fig. 4 is the three-dimensional structure synoptic diagram of unsteady base among the embodiment.
Wherein, 1, fixed pedestal; 101, spill spherical structure; 102, vertical duct; 103, horizontal pipeline; 104, central circular through hole; 105, interior manhole; 2, unsteady base; 201, convex spherical structure; 3, vacuum cup; 4, vacuum line; 401, vacuum line I; 402, vacuum line II; 5, screw.
Embodiment
The present invention is described in further detail according to embodiment that technical scheme of the present invention provides below in conjunction with accompanying drawing and inventor.
Embodiment
A kind of full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for comprises: fixed pedestal 1, float base 2, vacuum cup 3 and vacuum line 4, and as Fig. 1, Fig. 2, Fig. 3 a, Fig. 3 b, shown in Figure 4, wherein, the base 2 that floats is positioned on the fixed pedestal 1; Vacuum cup 3 is fixed in the last plane of the base 2 that floats by screw 5, and vacuum cup 3 is in order to placement and fixed substrate (wafer); Be provided with horizontal pipeline 103 in the fixed pedestal 1, vacuum line 4 comprises vacuum line I 401 and vacuum line II 402, and vacuum cup 3 is provided with horizontal air intake opening; Horizontal pipeline 103 links to each other with vacuum line I 401, and horizontal air intake opening links to each other with vacuum line II 402.
Described fixed pedestal 1 has spill spherical structure 101, and the base 2 that floats has convex spherical structure 201, is the semisphere contact matching between fixed pedestal 1 and the unsteady base 2.By between fixed pedestal 1 and the unsteady base 2 being spherical contact matching realization template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error.
Also be provided with vertical duct 102 in the described fixed pedestal 1, fixed pedestal 1 central authorities are provided with central circular through hole 104, central circular through hole 104 belows are provided with interior manhole 105, and interior manhole 105 communicates with central circular through hole 104, horizontal pipeline 103 and vertical duct 102 respectively; Vertical duct 102 topmost communicates with spill spherical structure 101, and vertical duct 102 communicates with interior manhole 105 bottom.
Principle of work of the present invention is: realize template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error by the spherical contact matching between fixed pedestal 1 and the unsteady base 2; Subsequently, adopt the negative pressure of vacuum locking of base 2 on fixed pedestal 1 and fixing that realizes floating, keep the relative pose between leveling meron and the template, guarantee in moulding process parallel between the template and substrate to keep homogeneity.
During application, by opening vacuum line I 401, under the effect of negative pressure of vacuum, the locking of base 2 on fixed pedestal 1 and fixing realizes floating after the leveling, and keep relative pose between leveling meron and the template, guarantee being parallel to each other between the template and substrate in moulding process.By opening vacuum line II 402, the gas pressure intensity that vacuum cup 3 produces between two planes up and down of substrate is poor, realizes under suction function the clamping of substrate and fixing.The negative pressure that whole wafer-supporting platform system produces by vacuum line realizes the locking of fixed pedestal 1 and unsteady base 2 after the leveling and fixing, and substrate fixing on vacuum cup 3.
Adopt the full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for of the present invention to realize that the method for substrate and leveling of template self-adaptation and wedge shape error compensation is:
(1) substrate is placed on the vacuum cup 3, opens the vacuum line system of vacuum cup 3, vacuum cup 3 is realized the clamping of substrate under suction function by the gas pressure intensity difference that produces between two planes up and down of substrate and is fixed;
(2) imprint head presses down, and template contacts with substrate, and along with the continuous increase of force of impression, fixed pedestal 1 is realized template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error with unsteady base 2 by spherical contact matching;
(3) force of impression increases to maximum, and keeps maximum force of impression constant, postpones to realize template and the complete parallel self-adaptation adjustment of substrate by 2-5s;
(4) the vacuum line system on the unlatching fixed pedestal 1, under the effect of negative pressure of vacuum, base 21 the locking and fixing on fixed pedestal of realize floating keeps the relative pose between leveling meron and the template, guarantees in moulding process parallel between the template and substrate.
Spill spherical structure 101 upper surfaces of fixed pedestal 1 and convex spherical structure 201 lower surfaces of unsteady base 2 should wear-resistant coatings or are heat-treated, and have very high surfaceness, hardness and wearing quality.
Claims (3)
1. one kind is used for full wafer wafer nano impression self-adaptation wafer-supporting platform, it is characterized in that it comprises: fixed pedestal (1), float base (2), vacuum cup (3) and vacuum line (4), and wherein, the base (2) that floats is positioned on the fixed pedestal (1); Vacuum cup (3) is fixed in the last plane of unsteady base (2); Be provided with horizontal pipeline (103) in the fixed pedestal (1), vacuum line (4) comprises vacuum line I (401) and vacuum line II (402), and vacuum cup 3 is provided with horizontal air intake opening; Horizontal pipeline (103) links to each other with vacuum line I (401), and horizontal air intake opening links to each other with vacuum line II (402).
2. a kind of full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for as claimed in claim 1, it is characterized in that, described fixed pedestal (1) has spill spherical structure (101), the base (2) that floats has convex spherical structure (201), contacts for semisphere between fixed pedestal (1) and the unsteady base (2).
3. a kind of full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for as claimed in claim 1 or 2, it is characterized in that, also be provided with vertical duct (102) in the described fixed pedestal (1), fixed pedestal (1) central authorities are provided with central circular through hole (104), central circular through hole (104) below is provided with interior manhole (105), and interior manhole (105) communicates with central circular through hole (104), horizontal pipeline (103) and vertical duct (102) respectively; Vertical duct (102) topmost communicates with spill spherical structure (101), and vertical duct (102) communicates with interior manhole (105) bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110266266A CN102269930B (en) | 2011-09-08 | 2011-09-08 | Self-adapting wafer bearing platform for nanoimprint of full wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110266266A CN102269930B (en) | 2011-09-08 | 2011-09-08 | Self-adapting wafer bearing platform for nanoimprint of full wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102269930A true CN102269930A (en) | 2011-12-07 |
| CN102269930B CN102269930B (en) | 2012-07-04 |
Family
ID=45052270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110266266A Active CN102269930B (en) | 2011-09-08 | 2011-09-08 | Self-adapting wafer bearing platform for nanoimprint of full wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102269930B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103644300A (en) * | 2013-12-31 | 2014-03-19 | 山东晨钟机械股份有限公司 | Self-adaption installation error sealing device |
| CN108098393A (en) * | 2018-01-02 | 2018-06-01 | 中电智能卡有限责任公司 | Applied to the card support platform of smart card slotter and smart card slotter |
| CN111300331A (en) * | 2019-12-19 | 2020-06-19 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Large-pressure flip bonding method for bonding chip substrate after pre-welding |
| CN116884903A (en) * | 2023-07-10 | 2023-10-13 | 苏州苏纳光电有限公司 | Wafer self-adaptation leveling device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070091291A1 (en) * | 2005-10-25 | 2007-04-26 | Nikon Corporation | Devices and methods for sensing secure attachment of an object onto a chuck |
| CN2914146Y (en) * | 2006-06-15 | 2007-06-20 | 深圳飞通光电子技术有限公司 | Lithium niobate wafer photolith whirl coating vacuum cups |
| KR100755007B1 (en) * | 2006-03-22 | 2007-09-04 | (주) 비앤피 사이언스 | A nano imprint lithography method and apparatus |
| US20080213418A1 (en) * | 2000-07-18 | 2008-09-04 | Hua Tan | Align-transfer-imprint system for imprint lithogrphy |
| CN101728296A (en) * | 2008-10-29 | 2010-06-09 | 沈阳芯源微电子设备有限公司 | Wafer-supporting platform |
-
2011
- 2011-09-08 CN CN201110266266A patent/CN102269930B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080213418A1 (en) * | 2000-07-18 | 2008-09-04 | Hua Tan | Align-transfer-imprint system for imprint lithogrphy |
| US20070091291A1 (en) * | 2005-10-25 | 2007-04-26 | Nikon Corporation | Devices and methods for sensing secure attachment of an object onto a chuck |
| KR100755007B1 (en) * | 2006-03-22 | 2007-09-04 | (주) 비앤피 사이언스 | A nano imprint lithography method and apparatus |
| CN2914146Y (en) * | 2006-06-15 | 2007-06-20 | 深圳飞通光电子技术有限公司 | Lithium niobate wafer photolith whirl coating vacuum cups |
| CN101728296A (en) * | 2008-10-29 | 2010-06-09 | 沈阳芯源微电子设备有限公司 | Wafer-supporting platform |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103644300A (en) * | 2013-12-31 | 2014-03-19 | 山东晨钟机械股份有限公司 | Self-adaption installation error sealing device |
| CN108098393A (en) * | 2018-01-02 | 2018-06-01 | 中电智能卡有限责任公司 | Applied to the card support platform of smart card slotter and smart card slotter |
| CN111300331A (en) * | 2019-12-19 | 2020-06-19 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Large-pressure flip bonding method for bonding chip substrate after pre-welding |
| CN111300331B (en) * | 2019-12-19 | 2021-08-06 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Large-pressure flip bonding method for bonding chip substrate after pre-welding |
| CN116884903A (en) * | 2023-07-10 | 2023-10-13 | 苏州苏纳光电有限公司 | Wafer self-adaptation leveling device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102269930B (en) | 2012-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101750885B (en) | Two-degree of freedom precise positioning work table | |
| CN102346369B (en) | Nanoimprint lithography machine for whole wafer | |
| CN102269930B (en) | Self-adapting wafer bearing platform for nanoimprint of full wafer | |
| CN202210213U (en) | Self-adaptive wafer bearing platform for nanometer impression of full wafer | |
| CN101770182B (en) | Three-degree of freedom flexible precision positioning workbench | |
| US11020894B2 (en) | Safe separation for nano imprinting | |
| CN101738855B (en) | Flexible micro-positioning stage with two degrees of freedom | |
| US7927976B2 (en) | Reinforced composite stamp for dry transfer printing of semiconductor elements | |
| KR101139152B1 (en) | Press load control method in precise press apparatus | |
| CN102096315B (en) | Device and method for nanoimprinting of full wafer | |
| US20120299222A1 (en) | Method and device for full wafer nanoimprint lithography | |
| CN101776851A (en) | Three DOF micro-positioning workbench for nano-imprint lithography system | |
| CN106881947B (en) | Transfer device and transfer method | |
| CN101770166B (en) | Two-translational-motion precision positioning working table for nano-imprint photoetching system | |
| CN103246161B (en) | A kind of self-adaptation imprint head for large-area nano impression | |
| CN110244510A (en) | A kind of nano-imprint stamp and preparation method thereof | |
| KR101087585B1 (en) | A Disposition Structure of Rolls and Printing Material and A Printing Apparatus and A Printing System Having the Same, and A Printing Method | |
| CN202205025U (en) | Full wafer photo nanoimprint lithography machine | |
| CN100505147C (en) | Pressure equalizing device for micro nano transfer printing | |
| CN214670076U (en) | Ultraviolet nanoimprint device based on six-dimensional micro-motion platform | |
| KR20080097807A (en) | Micro contact printing device using polymer stamp | |
| JP2017126723A (en) | Imprint device and production method of article | |
| CN214313133U (en) | Wafer bonding equipment | |
| KR100623209B1 (en) | Microcontact printing device using pdms stamp | |
| CN216210470U (en) | Device for nanoimprint with roll shaft imprinting roller |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |