CN202210213U - Self-adaptive wafer bearing platform for nanometer impression of full wafer - Google Patents

Self-adaptive wafer bearing platform for nanometer impression of full wafer Download PDF

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Publication number
CN202210213U
CN202210213U CN2011203368229U CN201120336822U CN202210213U CN 202210213 U CN202210213 U CN 202210213U CN 2011203368229 U CN2011203368229 U CN 2011203368229U CN 201120336822 U CN201120336822 U CN 201120336822U CN 202210213 U CN202210213 U CN 202210213U
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wafer
self
base
template
fixed pedestal
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Expired - Fee Related
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CN2011203368229U
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Chinese (zh)
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兰红波
丁玉成
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Qingdao University of Technology
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Qingdao University of Technology
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Abstract

The utility model discloses a self-adaptive wafer bearing platform for nanometer impression of a full wafer, comprising a fixed substrate, a floating base, a vacuum chuck and a vacuum pipeline, wherein the vacuum chuck is fixed on the upper plane of the floating base, the fixed substrate has a concave sphere-shaped structure, the floating base has a convex sphere-shaped structure, and hemispherical contact is formed between the fixed substrate and the floating base. The self-adaptive wafer bearing platform utilizes the spherical contact and match between the fixed substrate and the floating base to generate relative sliding so as to realize the parallel self-adaptive adjustment and the compensation of wedge-shape errors of a template and a base tap; and the floating base can be locked and fixed on the fixed substrate by vacuum negative pressure, so that the relative posture between the base tap and the template after being leveled can be maintained, and the template and the base tap can be kept to be parallel to each other in the process of impression. The self-adaptive wafer bearing platform has the advantages that the structure is simple, the adjustment is convenient, the cost is low, the adaptability is wide, the flexibility is high, and the like, can be used for the nanometer impression of the full wafer, and is particularly applicable to nanometer impression technology and equipment for full large-size wafers.

Description

A kind of full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for
Technical field
The utility model relates to a kind of nano impression and uses wafer-supporting platform, relates in particular to a kind of self-adaptation wafer-supporting platform that is applicable to large scale wafer full wafer nanometer stamping and photoetching machine, belongs to minute manufacturing and precision machinery technology field.
Background technology
(Nanoimprint Lithography NIL) is a kind of brand-new micro-nano patterned method to nano-imprint lithography, and it is that a kind of stress deformation that uses mould to pass through resist is realized its patterned technology.Compare with other micro-nano manufacturing approach, NIL has high resolution, Ultra Low Cost and large-duty characteristics, especially has more outstanding advantage in large area micro-nano rice structure and complex three-dimensional micro nano structure manufacture view.The mode of nano-imprint process realization at present mainly contains three kinds of schemes: stepping repeats nano-imprint process, roll extrusion seal technology and full wafer wafer nano impression.The ever-increasing demand of following micro-nano technology to make for large area micro-nano structure, device manufacturings such as high-brightness LED pattern technology, micro lens especially in recent years have more urgent demand for large tracts of land wafer yardstick micro-nano structure.Therefore, the exploitation of full wafer wafer nano-imprint process and equipment has become more and more important and more and more urgent.Be different from the wafer-supporting platform (also becoming the wafer work platform) that existing stepping repeats nano-imprint process and the use of roll extrusion seal technology; Full wafer wafer nano impression be through template (mould) simultaneously with whole wafer (substrate) on complete inhomogeneity the contact and impression of resist, a step (single step) is realized duplicating of wafer yardstick large-area graphs.Therefore, the employed wafer-supporting platform of full wafer wafer nano impression is very different at structure, function and form and existing nano-imprint lithography and the used wafer-supporting platform of various other lithographic equipments.
Because the error of nano impression construction machine itself and the out-of-flatness of substrate self (exist warpage and distortion; Especially for the LED epitaxial wafer); In the nano impression process, there is not parallel sum of errors wedge shape error; If the nonparallelism sum of errors wedge shape error between substrate and the mould is not compensated, can't guarantee then in moulding process between the template and substrate that uniformity consistency contact the residual layer thickness of acquisition uniformity fully.If template and the nonparallelism that reaches between the substrate surpass certain degree, cause wedge shape to stay the thickness difference of film to surpass the height of impression characteristic, the failure of figure transfer will be caused, but also the damage of template might be caused.In addition, template and substrate not parallel possibly cause also that template and substrate produce relative slippage in the nano impression process, and lateral spread takes place, and influences the precision of coining pattern; Template also may damage the impression characteristic when the demoulding.Therefore, in the nano impression process, must guarantee the depth of parallelism of template and substrate; In addition; Repeating nano-imprint process with stepping compares; For full wafer wafer nano impression, keep the depth of parallelism between template and the substrate particularly important, the contact area of each work step template and substrate in each moulding process is less relatively because stepping repeats nano-imprint process; Yet the area that template and substrate contact simultaneously in the full wafer wafer nano impression process is big (whole wafer area) very; Repeat nano-imprint process with the small size stepping and compare, full wafer wafer nano impression has the effect that error is amplified, so full wafer wafer nano-imprint process is for keeping the depth of parallelism between template and the substrate that more harsh requirement is arranged.So full wafer wafer nanometer stamping and photoetching machine must have template and the substrate parallel degree is regulated and wedge shape error compensation function.For full wafer wafer nano impression, accomplish this function by wafer-supporting platform, promptly in moulding process; Through regulating the variation of wafer-supporting platform spatial pose; The wedge shape error of compensation template and substrate keeps parallel between template and the substrate, avoids producing between them relatively laterally slip.Realize that uniformity consistency contact the residual layer thickness of acquisition uniformity between template and the substrate.In full wafer wafer embossed region, realize Hi-Fi figure transfer and duplicate.
The method that realizes template and adjustment of substrate parallel degree and wedge shape error through wafer-supporting platform has two kinds: passive adjustment (also being called the self-adaptation adjustment) and ACTIVE CONTROL adjustment.The self-adaptation adjustment is a nonparallelism of utilizing the flexibility of mechanism self to come passive adaptation template and substrate; When force of impression through template action on substrate the time; The wafer-supporting platform of carrying substrates can produce corresponding minor rotation, and compensation wedge shape error makes whole substrate stressed evenly.And this small rotation can adapt to through the flexibility of mechanism self.The method of self-adaptation adjustment mainly contains: flexure hinge mechanism, resiliency supported, universal float ball, wedge shape compensating module etc., the self-adaptation adjustment has significant advantage simple in structure, easy to adjust, that cost is low.The ACTIVE CONTROL adjustment is position and the nonparallelism that detects template and substrate through measuring system, and the result according to feedback initiatively adjusts the pose between template and the substrate through executive component, realizes positioned parallel between the two.ACTIVE CONTROL has high, the swift remarkable advantage of adjustment precision, but cost is high, and control is complicated.
The utility model content
The purpose of the utility model is exactly in order to solve the not parallel and problem that has the wedge shape error between the substrate and template in the full wafer wafer nano impression process; A kind of self-adaptation wafer-supporting platform that is applicable to full wafer wafer nano impression is provided, to realize parallel adjustment and wedge shape error compensation between substrate and the template.
To achieve these goals, the utility model is taked following technical solution:
A kind of self-adaptation wafer-supporting platform that is applicable to full wafer wafer nano impression comprises: fixed pedestal, float base, vacuum cup and vacuum line, and wherein, unsteady base is positioned on the fixed pedestal; Vacuum cup is through the last plane of screw retention in the base that floats, and vacuum cup is in order to place and fixed substrate (wafer); Be provided with horizontal pipeline in the fixed pedestal, vacuum line comprises vacuum line I and vacuum line II, and vacuum cup is provided with horizontal air intake opening; Horizontal pipeline links to each other with vacuum line I, and horizontal air intake opening links to each other with vacuum line II.
Said fixed pedestal has the spill spherical structure, and unsteady base has the convex spherical structure, is the semisphere contact matching between fixed pedestal and the unsteady base.Through between fixed pedestal and the unsteady base being spherical contact matching realization template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error.
Also be provided with vertical duct in the said fixed pedestal, fixed pedestal central authorities are provided with central circular through hole, and the central circular through hole below is provided with interior manhole, and interior manhole communicates with central circular through hole, horizontal pipeline and vertical duct respectively; Vertical duct topmost communicates with the spill spherical structure, and vertical duct communicates with interior manhole bottom.
The principle of work of the utility model is: realize template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error through the spherical contact matching between fixed pedestal and the unsteady base; Subsequently, adopt the negative pressure of vacuum locking of base on fixed pedestal and fixing that realizes floating, keep the relative pose between leveling meron and the template, guarantee in moulding process parallel between the template and substrate to keep homogeneity.
During application; Through open vacuum pipeline I, under the effect of negative pressure of vacuum, the locking of base on fixed pedestal and fixing realizes floating after the leveling; And keep the relative pose between leveling meron and the template, guarantee being parallel to each other between the template and substrate in moulding process.Through open vacuum pipeline II, the gas pressure intensity that vacuum cup produces between two planes up and down of substrate is poor, under suction function, realizes the clamping of substrate and fixing.The negative pressure that whole wafer-supporting platform system produces through vacuum line realizes the locking of fixed pedestal and unsteady base after the leveling and fixing, and substrate fixing on vacuum cup.
The utility model be used for full wafer wafer nano impression self-adaptation wafer-supporting platform; Be provided with bigger central circular through hole in fixed pedestal central authorities; Reduce the contact area between fixed pedestal and the unsteady base on the one hand; Thereby the friction force when reducing the self-adaptation adjustment makes both be easy to produce relative slip or rotation, thereby the wedge shape error between template and the substrate is fully compensated; On the other hand, increase locking and the absorption affinity fixedly the time, avoid in moulding process, occurring sliding relatively between the fixed pedestal and unsteady base.
Adopt the full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for of the utility model to realize that the method for substrate and leveling of template self-adaptation and wedge shape error compensation is:
(1) substrate is placed on the vacuum cup, the vacuum line system of open vacuum sucker, vacuum cup is realized under suction function the clamping of substrate and fixing through the gas pressure intensity difference that between two planes up and down of substrate, produces;
(2) imprint head presses down, and template contacts with substrate, and along with the continuous increase of force of impression, fixed pedestal and unsteady base are realized template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error through spherical contact matching;
(3) force of impression increases to maximum, and keeps maximum force of impression constant, postpones to realize the complete parallel self-adaptation adjustment of template and substrate through 2-5s;
(4) the vacuum line system on the unlatching fixed pedestal; Under the effect of negative pressure of vacuum; The locking of base on fixed pedestal and fixing of realize floating keeps the relative pose between leveling meron and the template, guarantees in moulding process parallel between the template and substrate.
The utility model be used for full wafer wafer nano impression self-adaptation wafer-supporting platform, be used for full wafer wafer nano impression, also can be used for the bonding machine, realize the wafer scale bonding, have following beneficial effect:
(1) simple in structure, easy to adjust, cost is low.
(2) complete wedge shape error compensation: reduce contact area owing to be provided with bigger central circular through hole in fixed pedestal central authorities; Fixed pedestal is rolling friction with spherical contact of unsteady base in addition; Therefore has very less friction between fixed pedestal and the unsteady base; Be easy to produce relative slip and rolling, so compensation is abundant and complete.
(3) adopt negative pressure of vacuum locking and fixing between fixed pedestal and the unsteady base, have simply fast, precision is higher, is convenient to operation, and economic low advantage.
(4) wide adaptability of system, flexible high, along with the difference of wafer size, whole wafer-supporting platform system mobility is little, can adapt to the requirement of different wafer size full wafer wafer nano-imprint process.
(5) the full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for of the utility model especially is fit to large scale wafer full wafer nano impression, for the exploitation of large scale wafer full wafer nano-imprint process and equipment provides a kind of effective solution.
Description of drawings
Fig. 1 is the structural representation that is used for full wafer wafer nano impression self-adaptation wafer-supporting platform among the embodiment.
Fig. 2 is the three-dimensional structure synoptic diagram that is used for full wafer wafer nano impression self-adaptation wafer-supporting platform among the embodiment.
Fig. 3 a is the three-dimensional structure synoptic diagram of fixed pedestal among the embodiment.
Fig. 3 b is the three-dimensional structure cross-sectional schematic of fixed pedestal among the embodiment.
Fig. 4 is the three-dimensional structure synoptic diagram of unsteady base among the embodiment.
Wherein, 1, fixed pedestal; 101, spill spherical structure; 102, vertical duct; 103, horizontal pipeline; 104, central circular through hole; 105, interior manhole; 2, unsteady base; 201, convex spherical structure; 3, vacuum cup; 4, vacuum line; 401, vacuum line I; 402, vacuum line II; 5, screw.
Embodiment
The utility model is done further to describe in detail according to the embodiment that the technical scheme of the utility model provides below in conjunction with accompanying drawing and utility model people.
Embodiment
A kind of full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for comprises: fixed pedestal 1, float base 2, vacuum cup 3 and vacuum line 4, and like Fig. 1, Fig. 2, Fig. 3 a, Fig. 3 b, shown in Figure 4, wherein, the base 2 that floats is positioned on the fixed pedestal 1; Vacuum cup 3 is fixed in the last plane of the base 2 that floats through screw 5, and vacuum cup 3 is in order to placement and fixed substrate (wafer); Be provided with horizontal pipeline 103 in the fixed pedestal 1, vacuum line 4 comprises vacuum line I 401 and vacuum line II 402, and vacuum cup 3 is provided with horizontal air intake opening; Horizontal pipeline 103 links to each other with vacuum line I 401, and horizontal air intake opening links to each other with vacuum line II 402.
Said fixed pedestal 1 has spill spherical structure 101, and the base 2 that floats has convex spherical structure 201, is the semisphere contact matching between fixed pedestal 1 and the unsteady base 2.Through between fixed pedestal 1 and the unsteady base 2 being spherical contact matching realization template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error.
Also be provided with vertical duct 102 in the said fixed pedestal 1; Fixed pedestal 1 central authorities are provided with central circular through hole 104; Central circular through hole 104 belows are provided with interior manhole 105, and interior manhole 105 communicates with central circular through hole 104, horizontal pipeline 103 and vertical duct 102 respectively; Vertical duct 102 topmost communicates with spill spherical structure 101, and vertical duct 102 communicates with interior manhole 105 bottom.
The principle of work of the utility model is: realize template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error through the spherical contact matching between fixed pedestal 1 and the unsteady base 2; Subsequently, adopt the negative pressure of vacuum locking of base 2 on fixed pedestal 1 and fixing that realizes floating, keep the relative pose between leveling meron and the template, guarantee in moulding process parallel between the template and substrate to keep homogeneity.
During application; Through open vacuum pipeline I 401, under the effect of negative pressure of vacuum, the locking of base 2 on fixed pedestal 1 and fixing realizes floating after the leveling; And keep the relative pose between leveling meron and the template, guarantee being parallel to each other between the template and substrate in moulding process.Through open vacuum pipeline II 402, the gas pressure intensity that vacuum cup 3 produces between two planes up and down of substrate is poor, under suction function, realizes the clamping of substrate and fixing.The negative pressure that whole wafer-supporting platform system produces through vacuum line realizes the locking of fixed pedestal 1 and unsteady base 2 after the leveling and fixing, and substrate fixing on vacuum cup 3.
Adopt the full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for of the utility model to realize that the method for substrate and leveling of template self-adaptation and wedge shape error compensation is:
(1) substrate is placed on the vacuum cup 3, the vacuum line system of open vacuum sucker 3, vacuum cup 3 is realized under suction function the clamping of substrate and fixing through the gas pressure intensity difference that between two planes up and down of substrate, produces;
(2) imprint head presses down, and template contacts with substrate, and along with the continuous increase of force of impression, fixed pedestal 1 is realized template and adjustment of substrate parallel self-adaptation and wedge shape compensation of error with unsteady base 2 through spherical contact matching;
(3) force of impression increases to maximum, and keeps maximum force of impression constant, postpones to realize the complete parallel self-adaptation adjustment of template and substrate through 2-5s;
(4) the vacuum line system on the unlatching fixed pedestal 1; Under the effect of negative pressure of vacuum; Base 21 the locking and fixing on fixed pedestal of realize floating keeps the relative pose between leveling meron and the template, guarantees in moulding process parallel between the template and substrate.
Spill spherical structure 101 upper surfaces of fixed pedestal 1 and convex spherical structure 201 lower surfaces of unsteady base 2 should perhaps be heat-treated by wear-resistant coating, have very high surfaceness, hardness and wearing quality.

Claims (3)

1. one kind is used for full wafer wafer nano impression self-adaptation wafer-supporting platform, it is characterized in that it comprises: fixed pedestal (1), float base (2), vacuum cup (3) and vacuum line (4), and wherein, the base (2) that floats is positioned on the fixed pedestal (1); Vacuum cup (3) is fixed in the last plane of unsteady base (2); Be provided with horizontal pipeline (103) in the fixed pedestal (1), vacuum line (4) comprises vacuum line I (401) and vacuum line II (402), and vacuum cup 3 is provided with horizontal air intake opening; Horizontal pipeline (103) links to each other with vacuum line I (401), and horizontal air intake opening links to each other with vacuum line II (402).
2. a kind of full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for as claimed in claim 1; It is characterized in that; Said fixed pedestal (1) has spill spherical structure (101), and the base (2) that floats has convex spherical structure (201), contacts for semisphere between fixed pedestal (1) and the unsteady base (2).
3. according to claim 1 or claim 2 a kind of full wafer wafer nano impression self-adaptation wafer-supporting platform that is used for; It is characterized in that; Also be provided with vertical duct (102) in the said fixed pedestal (1); Fixed pedestal (1) central authorities are provided with central circular through hole (104), and central circular through hole (104) below is provided with interior manhole (105), and interior manhole (105) communicates with central circular through hole (104), horizontal pipeline (103) and vertical duct (102) respectively; Vertical duct (102) topmost communicates with spill spherical structure (101), and vertical duct (102) communicates with interior manhole (105) bottom.
CN2011203368229U 2011-09-08 2011-09-08 Self-adaptive wafer bearing platform for nanometer impression of full wafer Expired - Fee Related CN202210213U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104384992A (en) * 2014-11-19 2015-03-04 重庆富吉机械制造有限公司 Floating support component
CN105150576A (en) * 2015-10-10 2015-12-16 扬州金森光电材料有限公司 Pressure testing tool
CN110842643A (en) * 2019-11-27 2020-02-28 霍山嘉远智能制造有限公司 Quick leveling block device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104384992A (en) * 2014-11-19 2015-03-04 重庆富吉机械制造有限公司 Floating support component
CN105150576A (en) * 2015-10-10 2015-12-16 扬州金森光电材料有限公司 Pressure testing tool
CN110842643A (en) * 2019-11-27 2020-02-28 霍山嘉远智能制造有限公司 Quick leveling block device

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120502

Termination date: 20140908

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