CN102263138A - Novel structured diode for protection - Google Patents
Novel structured diode for protection Download PDFInfo
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- CN102263138A CN102263138A CN2010101882129A CN201010188212A CN102263138A CN 102263138 A CN102263138 A CN 102263138A CN 2010101882129 A CN2010101882129 A CN 2010101882129A CN 201010188212 A CN201010188212 A CN 201010188212A CN 102263138 A CN102263138 A CN 102263138A
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- diode
- potential barrier
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- barrier
- protection
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Abstract
The invention relates to a semiconductor diode, in particular to a novel structured semiconductor diode for protection. The novel structured semiconductor diode for protection combines the advantages of a schottky metal potential barrier and a diffuse type PN junction potential barrier, so the positive state of the diode shows the characteristics of the schottky metal potential barrier and the negative state of the diode shows the characteristics of the diffuse type PN junction potential barrier when the diode works; therefore, the whole comprehensive electric parameter performance can be enhanced greatly; and the diode aims at the conventional wire connecting box products for solar panel protection.
Description
Technical field
The present invention relates to semiconductor diode, is the protection semiconductor diode of a kind of new structure of design specifically.
Background technology
At present, the diode of the planar technique manufacturing of conventional design is single schottky metal barrier diode or single diffused PN junction barrier diode, and two kinds of its electrical properties of different barrier diodes respectively have quality.The positive electrotropism excellence of schottky metal barrier diode oppositely electrically exists: the characteristics that electric leakage is big, oppositely hot properties is poor, antistatic effect is weak; Diffused PN junction barrier diode reverse characteristic has but just in time remedied the deficiency of schottky metal barrier diode, and the forward voltage of schottky metal barrier diode is low, current density is big but its forward characteristic can not show a candle to again.Therefore, under all demanding situation of forward and reverse characteristic (the protection semiconductor diode that for example uses on the solar panels), the diode of original single potential barrier is difficult to satisfy use.
Summary of the invention
At the limitation that exists in the existing product design; the object of the present invention is to provide a kind of protection semiconductor diode of new structure; under the attainable condition of existing plane production technology; combination of advantages separately with schottky metal potential barrier, diffused PN junction potential barrier; and with its defective shielding separately; to satisfy all high instructions for use of forward and reverse characteristic; make its forward operating state performance be schottky metal potential barrier PN junction characteristic, the reverse operation state shows as the diode of a kind of new structure of diffused PN junction characteristic.
For reaching above purpose, the technical scheme that the present invention takes is:
The protection semiconductor diode of design kind of new structure; utilize PN junction potential barrier different characteristics of its potential barrier extension width under the different operating voltage value; it is characterized in that: its characteristic of forward operating state of diode shows as the character of schottky metal PN junction potential barrier, and its characteristic of reverse operation state shows as diffused PN junction barrier nature.
The new structure protection semiconductor diode that the present invention is designed; utilized the advantage of schottky metal potential barrier and diffused PN junction potential barrier; make it when work; forward condition shows the characteristic of schottky metal potential barrier; reverse state shows the characteristic of diffused PN junction potential barrier, so that its whole electrical quantity combination property significantly improves.Especially at present solar panels protection terminal box product.
Description of drawings
The present invention has following accompanying drawing:
The novel protected diode structure profile of using of Fig. 1,
The novel protected forward working state structure schematic diagram of Fig. 2 with semiconductor diode,
The novel protected reverse operation status architecture schematic diagram of Fig. 3 with semiconductor diode.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
The novel protected semiconductor diode of using that the present invention is designed, what adopt fully is conventional planar diode manufacturing technology.Mainly wait and realize the structural behaviour that designs by oxidation, photoetching, shallow junction diffusion, barrier metal metallization processes.Wherein: realize the subregion in P+, N district by oxidation, photoetching process, the principle of subregion is: guarantee the PN junction pinch off under working inverse voltage.By the P+ district in the shallow junction diffusion technology implementation structure, the N district good with extension forms diffused PN junction potential barrier.By the schottky metal barrier region in the barrier metal metallization processes implementation structure.Under a completely normal planar technique manufacturing technology, can realize this protecting diode that we are required like this.
Below in conjunction with Fig. 1: the novel protected diode structure profile of using illustrates the process that this diode is made.
The present invention selects the N type thin epitaxy material 1 of high concentration substrate for use.
At first pass through cleaning, oxidation at N type epitaxial loayer
10SiO2 protection zone in the last making structure
11Carry out a photoetching and form P+ district diffusion zone
12Carry out the shallow junction diffusion of P+ district then, produce the P+ district in the structure; Carry out the secondary photoetching again and form the metal barrier region
13, carry out the barrier metal deposit, do process annealing and produce metal barrier region in the structure: carry out the deposit of front electrode metal again, carry out third photo etching then and form the front metal electrode
14Carry out the back metal deposit at last and produce back metal electrode in the structure
15So just create the protection diode of this new structure.
The new structure protection semiconductor diode that adopts above-mentioned technology to make; in its structure; combine schottky metal PN junction potential barrier and diffused PN junction potential barrier, the forward characteristic of diode shows as the character of schottky metal PN junction potential barrier, and reverse characteristic shows as diffused PN junction barrier nature.
Principle of the present invention is: utilize PN junction potential barrier different characteristics of its potential barrier extended area width under different voltage values, make diffused PN junction potential barrier be in the pinch off state under working inverse voltage, the metal potential barrier is lived in shielding; And under the forward operating voltage potential barrier extended area minimum, make electric current flow through the area maximum of metal potential barrier.Such result is: the diode forward operating current is by schottky metal PN junction potential barrier, and the reverse operation saturation current is by diffused PN junction potential barrier, reached the effect that the advantage of two kinds of different potential barriers can be given full play under the different directions operating state.
The new structure protection that Fig. 2 designs for the present invention semiconductor diode forward working state structure schematic diagram
Wherein metal is generally done the surface electrode metal with silver or aluminium.When diode adds the forward operating voltage, the diffused PN junction potential barrier shown in the figure, according to the semiconductor PN theory, its barrier width to N district expansion is approximately 0, makes the area maximum of the schottky metal potential barrier that forward current is flowed through like this.
The new structure protection that Fig. 3 designs for the present invention semiconductor diode reverse operation status architecture schematic diagram
When diode adds working inverse voltage, diffused PN junction potential barrier shown in the figure, according to the semiconductor PN theory, it is to the barrier width maximum of N district expansion, the lateral part is fully by the expansion potential barrier UNICOM in two adjacent P+ districts, with the schottky metal barrier shields.Be noted that the N type district of different resistivity here, the potential barrier extension width difference under different voltages, so, the time to find voltage, resistivity and potential barrier extension width three's relation in design.
The invention has the beneficial effects as follows: device shows the characteristic of schottky metal potential barrier when forward is worked: forward voltage is low, power consumption is little, current density is big; Show the characteristic of diffused PN junction potential barrier during reverse operation: reverse leakage is little, hot properties good, antistatic effect is strong.Make this product can be used on all high field of forward and reverse requirement fully.Especially at solar panels protection terminal box product.
Claims (1)
1. the protection semiconductor diode of a new structure; in its structural design; combine two kinds of potential barriers of schottky metal PN junction potential barrier and diffused PN junction; it is characterized in that: the forward characteristic of diode shows as the character of schottky metal PN junction potential barrier, and reverse characteristic shows as diffused PN junction barrier nature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101882129A CN102263138A (en) | 2010-05-31 | 2010-05-31 | Novel structured diode for protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101882129A CN102263138A (en) | 2010-05-31 | 2010-05-31 | Novel structured diode for protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102263138A true CN102263138A (en) | 2011-11-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101882129A Pending CN102263138A (en) | 2010-05-31 | 2010-05-31 | Novel structured diode for protection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102263138A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1591908A (en) * | 2003-08-18 | 2005-03-09 | 谢福淵 | Junction barrier schottky device of low forward flow voltage drop and high reverse blocking voltage |
| US20070034901A1 (en) * | 2005-02-11 | 2007-02-15 | Alpha & Omega Semiconductor, Ltd | Trench junction barrier controlled Schottky |
-
2010
- 2010-05-31 CN CN2010101882129A patent/CN102263138A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1591908A (en) * | 2003-08-18 | 2005-03-09 | 谢福淵 | Junction barrier schottky device of low forward flow voltage drop and high reverse blocking voltage |
| US20070034901A1 (en) * | 2005-02-11 | 2007-02-15 | Alpha & Omega Semiconductor, Ltd | Trench junction barrier controlled Schottky |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| DD01 | Delivery of document by public notice |
Addressee: Liu Xiaojian Document name: Notification that Application Deemed to be Withdrawn |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111130 |