CN102255012A - Manufacturing method and structure of high-voltage direct-current light-emitting diode chip - Google Patents
Manufacturing method and structure of high-voltage direct-current light-emitting diode chip Download PDFInfo
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- CN102255012A CN102255012A CN2011101986743A CN201110198674A CN102255012A CN 102255012 A CN102255012 A CN 102255012A CN 2011101986743 A CN2011101986743 A CN 2011101986743A CN 201110198674 A CN201110198674 A CN 201110198674A CN 102255012 A CN102255012 A CN 102255012A
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Abstract
The invention discloses a manufacturing method and a structure of a high-voltage direct-current light-emitting diode chip. The manufacturing method comprises the following steps of: flipping a plurality of selected light-emitting diode chip units on the surface of a high-thermal-conductivity substrate provided with a serial circuit with a flipping process and bonding chips flipped on the substrate with bonding equipment to connect the plurality of light-emitting diode chip units in series in sequence; performing laser stripping on the chips connected in series to a heat conducting substrate and removing a sapphire substrate; and forming a high-voltage direct-current light-emitting diode. In the method, the conventional chip unit is bonded on the high-thermal-conductivity chip substrate provided with the serial circuit for sapphire stripping; the method is simple, is easy to operate and contributes to increasing the chip yield and the production efficiency; and in a manufactured chip structure, the input power of chips can be increased by increasing serial chips, so that the heat injury of a pn junction in a large-current working state is reduced, and the reduction in the luminous efficiency, caused by over high density of current flowing through the pn junction, is prevented. Meanwhile, the high-thermal-conductivity substrate and relatively small working current are adopted, so that heat damage to the chips is reduced, and the service life of the chips is further prolonged.
Description
Technical field
The present invention relates to method for manufacturing LED chip and structure thereof, refer in particular to a kind of high voltage direct current method for manufacturing LED chip and structure thereof that is used for field of semiconductor illumination.
Background technology
Light-emitting diode has that volume is little, efficient is high and advantage such as the life-span is long, has a wide range of applications in fields such as traffic indication, outdoor panchromatic demonstrations.Especially utilize large-power light-emitting diodes may realize semiconductor solid lighting, cause the revolution of human illumination history, thereby become the research focus of present person in electronics gradually.
Traditional chip manufacturing process is to prepare hundreds of even thousands of chips on a slice substrate simultaneously, certain distance is arranged between each chip, after preparing these chips, carry out scribing, cutting with their separation, after follow-up technologies such as encapsulation obtain single light-emitting diode.The structure of common single LED core be on substrates such as sapphire extension the single PN kink structure of n type semiconductor layer, active layer, p type semiconductor layer.In addition, on p type semiconductor layer, dispose the P electrode, on n type semiconductor layer, dispose the N electrode.
At present, no matter be that powerful or low power LED illumination is used, generally all by power supply, led driver, led chip, several parts of lens and substrate constitute, wherein Guan Jian element is a led driver, it must provide a constant current output could guarantee that the light that LED sends can be not flickering, and the LED color offset phenomenon can not take place, and the cost of drive circuit, energy consumption and stability are important bottlenecks of restriction LED extensive use, because the high-voltage driving circuit technology is ripe relatively more, use more extensive, therefore, the led chip of development and use high voltage direct current drive circuit is all significant to the application of further performance led light source and relative conventional light source advantage and further universal led light source.For the large-power light-emitting diodes that semiconductor lighting is used, 40 watts semiconductor lamp can be realized by 40 1 watt the single large-power light-emitting diodes of connecting.Yet the low power LED of using for semiconductor lighting is if will make 40 watts the semiconductor lamp more single individual dice that needs to connect; Because the pipe number that uses is a lot, therefore need to increase complicated more peripheral circuit and driver.Bring difficulty so not only for the design of peripheral circuit, and complicated circuit structure also can bring negative influence to reliability, useful life and the luminescent properties etc. of device.
Therefore, in field of semiconductor illumination, how to break through the periphery circuit design that prior art is further simplified light-emitting diode, simplify manufacture craft, improve the chip light emitting performance, improve chip reliability, prolong chip useful life etc., remain the technical task that those skilled in the art need to be resolved hurrily.
Summary of the invention
The high voltage direct current LED chip construction that the technical problem to be solved in the present invention is to provide a kind of manufacture method of high voltage direct current light-emitting diode chip for backlight unit and adopts this method to make.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
1) roughening heat conduction translate substrate increases the surface area that is used for upside-down mounting and bonding; On the heat conduction translate substrate, make the series circuit unit that is used for the connection of a plurality of led chips unit, will not belong to all the other substrate surface insulation processing of series circuit unit simultaneously;
2) make the led chip unit that independently adopts Sapphire Substrate, and independently the led chip unit carries out sorting;
3) well-graded independent led chip unit upside-down mounting is had on the heat conduction of the series circuit unit translate substrate preparing, connected successively in a plurality of led chips unit;
4) upside-down mounting all led chip unit on the heat conduction translate substrate are done the cryogenic high pressure bonding technology together again;
5) the described Sapphire Substrate of laser lift-off;
6) the led chip unit after cleaning is peeled off;
7) grind the heat conduction translate substrate that upside-down mounting has a plurality of led chips unit, draw according to the series circuit unit that makes on the heat conduction translate substrate and split thermal conductive substrate, form independently high voltage direct current LED.
As preferred version of the present invention, in the step 1), making series circuit unit is included in to make on the heat conduction translate substrate and is used for the electrode pad of led chip cell electrode pressure welding and the metal interconnected circuit of a plurality of led chips unit of connecting.
As preferred version of the present invention, in the step 1), make described insulating barrier the heat conduction translate substrate surface passivation outside the series circuit unit is insulated.Further preferred, described insulating barrier adopts SiO
2A kind of among material, SiN, TiN, the TaN or the composite material of multiple composition wherein.
Further preferred, described heat conduction translate substrate adopts Si substrate or Cu substrate.
As preferred version of the present invention, the reverse installation process in the step 3) comprises: utilize bonding technology that the N electrode of a plurality of led chips unit and P electrode are connected with series circuit unit on the described heat conduction translate substrate, thereby connected successively in a plurality of led chips unit.
Further preferred, it is the 2-4 ton that described cryogenic high pressure bonding technology adopts pressure, and temperature is 100-300 degree centigrade.
A kind of high voltage direct current LED chip construction comprises: a plurality of led chips unit and a chip base;
Described led chip sequence of unit comprises n type semiconductor layer, active layer and p type semiconductor layer, and N electrode that is electrically connected with n type semiconductor layer and p type semiconductor layer respectively and P electrode, described N electrode and P electrode are positioned on the same one side of light-emitting diode chip for backlight unit unit;
Described chip base comprises thermal conductive substrate, is positioned at the insulating barrier on the thermal conductive substrate, and is positioned at the connect series circuit of a plurality of led chips unit of outer being used to of insulating barrier;
Described a plurality of led chips unit upside-down mounting is on described chip base, and connects successively in described a plurality of led chips unit.
The series circuit of described a plurality of led chips unit that is used to connect comprises the electrode pad that is used for the pressure welding of led chip cell electrode and the metal interconnected circuit of a plurality of led chips unit of connecting.
Compared to prior art, beneficial effect of the present invention is:
The high voltage direct current light-emitting diode chip for backlight unit that the present invention makes, multiple chips unit by using reverse installation process is connected on the same chip base, form the led chip array, thereby under the situation that does not change the chip operation electric current, improve the total operating voltage of chip, make it under high pressure to work.Because this high voltage direct current light-emitting diode chip for backlight unit will common single light-emitting diode be divided into the chip unit of a plurality of series connection, be about to a plurality of little pn knots and require to be cascaded according to reality, form by many pn and tie the device that is in series.So just, can increase the input power of chip in the mode that increases series connection chip unit number, thereby reduce the fire damage of pn knot under big current work state, the current density that has prevented to flow through the pn knot is excessive and light efficiency that cause descends.Therefore, can effectively reduce drive current, improve the device inside thermal characteristics, thereby reduce the caloric value of chip, improve the chip light emitting performance, prolong chip useful life.
In addition, this technology is separately made chip unit and chip base, and utilizes reverse installation process to finish final chip, and method is simple, easy to operate, utilizes reverse installation process to substitute the electrode bridge connection technology and has reduced the manufacture difficulty that interconnects between the multicore blade unit; And according to actual demand, can carry out accommodation to the peripheral circuit on the chip base easily, simplify the design difficulty of peripheral circuit, help the raising of chip yields and production efficiency chip.
Description of drawings
Fig. 1 is the structural representation of embodiment mesohigh direct current light-emitting diode chip for backlight unit;
Fig. 2 is the structural representation of embodiment chips substrate.
Embodiment
Further specify concrete implementation step of the present invention below in conjunction with accompanying drawing, for the convenience that illustrates, accompanying drawing is not proportionally drawn.
High voltage direct current LED chip construction provided by the invention as shown in Figure 1, comprising: a plurality of LED (light-emitting diode) chip unit 10 and chip base 20; Each led chip unit 10 order at least comprises n type semiconductor layer, active layer and p type semiconductor layer, and N electrode that is electrically connected with n type semiconductor layer and p type semiconductor layer respectively and P electrode, described N electrode and P electrode are positioned on the same one side of led chip unit 10; As shown in Figure 2, described chip base 20 comprises thermal conductive substrate 21, is positioned at the insulating barrier 22 on the thermal conductive substrate 21, and is positioned at N pole plate (N-PAD) 23, the P pole plate (P-PAD) 24 outside the insulating barrier 22 and the metal interconnected circuit 25 and the metal electrode pad 26 of a plurality of led chips unit 10 that is used to connect.10 upside-down mountings of a plurality of led chips unit are on chip base 20, and a plurality of led chips unit 10 connects successively, and drawn respectively by N pole plate (N-PAD) 23 and P pole plate (P-PAD) 24, constitute the high voltage direct current light-emitting diode chip for backlight unit.
The preferred embodiment of this high voltage direct current method for manufacturing LED chip below is provided, specifically may further comprise the steps:
1) make chip base 20, described chip base 20 surfaces are provided with N pole plate 23, P pole plate 24 and are used to connect the series circuit unit of a plurality of described led chips unit 10.
Wherein, when making described chip base 20, on heat conduction translate substrate 21, make insulating barrier 22, and on described insulating barrier 22, make N pole plate 23, P pole plate 24 and the series circuit unit of a plurality of described led chips unit 10 that is used to connect.Described series circuit unit comprises metal interconnecting wires road 25 and metal electrode pad 26.
Described heat conduction translate substrate 21 can adopt Si substrate or Cu substrate; Described insulating barrier 22 can adopt SiO
2A kind of among material, SiN, TiN, the TaN or the composite material of multiple composition wherein.
2) make a plurality of independently led chips unit 10, and the N electrode of described led chip unit 10 and P electrode are positioned at on the one side.
Wherein, can make led chip unit 10 according to following steps:
(1) utilize photoetching and etching or laser scribing technology to form the aisle on the growth substrates surface, growth substrates is divided between a plurality of cellular zones, for example adopting optical maser wavelength is the laser scribing of 200-400nm, draws the road width and can be 2-15 μ m, and the scribing degree of depth can be 1-50 μ m.After forming the aisle, clean growth substrates, foul residual in the above-mentioned aisle is removed.Described growth substrates is a Sapphire Substrate.
(2) utilize epitaxial lateral overgrowth technology growth epitaxial loayer, for example utilize metal organic chemical vapor deposition, molecular beam epitaxy or hydride gas-phase epitaxy technology to carry out transversal epitaxial growth.Described epitaxial loayer comprises n type semiconductor layer, active layer and p type semiconductor layer from the bottom to top, makes the epitaxial loayer electricity isolation mutually of going up growth between each cellular zone, forms raceway groove between the epitaxial loayer between each cellular zone; The n type semiconductor layer of growth is a N type GaN layer, and p type semiconductor layer is a P type GaN layer, and active layer is a GaN based quantum well layer; Before growing epitaxial, growth substrates is carried out the etching aisle, help to discharge stress, the protection chip.
(3) on the epitaxial loayer between each cellular zone, make P electrode and N electrode, P electrode and N electrode are positioned on the same one side of described epitaxial loayer; Wherein N electrode and P electrode can be made by technologies such as etchings; Preferably, between P electrode and p type semiconductor layer, can also make current extending, as transparent conductive material ITO etc.
(4), thereby obtain a plurality of independently led chips unit 10 with described growth substrates attenuate and draw and to split.
3) utilize reverse installation process with unit 10 upside-down mountings of a plurality of described led chips in described chip base 20 surfaces, connected successively in a plurality of described led chips unit 10, and draw the N electrode and the P electrode of the led chip unit 10 at series connection two ends by N pole plate 23 and P pole plate 24 respectively.
Reverse installation process wherein comprises: utilize bonding technology that the N electrode of a plurality of described led chips unit 10 is connected (being upside-down mounting) with the P electrode with the series circuit unit on described chip base 20 surfaces, thereby connected successively in a plurality of described led chips unit.
4) upside-down mounting all led chip unit on the heat conduction translate substrate are done the cryogenic high pressure bonding technology together again; For the second time can to adopt pressure be the 1-4 ton to bonding technology, and temperature is 100-300 degree centigrade, and wherein preferred pressure is about 3 tons, temperature is 280 degrees centigrade.This step has further strengthened the bonding force on led chip unit 10 and chip base 20 surfaces.Increase its stability.Bonding technology is this area common process, repeats no more once more.
5) the described growth substrates of laser lift-off is peeled off Sapphire Substrate in the present embodiment;
6) the led chip unit after cleaning is peeled off;
7) grind the heat conduction translate substrate that upside-down mounting has a plurality of led chips unit, draw according to the series circuit unit that makes on the heat conduction translate substrate and split thermal conductive substrate, form independently high voltage direct current LED, finally finish the making of high voltage direct current light-emitting diode chip for backlight unit.The exiting surface of said chip is the N-Gan layer.
When making this high voltage direct current light-emitting diode chip for backlight unit, position, the connected mode of the arrangement mode of a plurality of led chips unit 10, its N electrode and P electrode can be various, can adjust according to actual demand chip, Fig. 1 is wherein a kind of connected mode of preferably arranging, but the present invention is not limited to this.
Compare the packaged type of traditional single chips,, therefore, improved the production efficiency of packaging technology, reduced the production cost of packaging technology because the high voltage direct current led chip adopts the mode of a plurality of chip unit array distribution to arrange.
This method is separately made chip unit and chip base, utilizes reverse installation process to substitute the electrode bridge connection technology, has reduced the manufacture difficulty that interconnects between the multicore blade unit; And according to actual demand, can carry out accommodation to peripheral circuit easily, simplify the design difficulty of peripheral circuit, help the raising of chip yields and production efficiency chip.The high voltage direct current LED that makes can effectively reduce drive current, improves the device inside thermal characteristics, thereby reduces the caloric value of chip, improves the chip light emitting performance, prolongs chip useful life.
Other process conditions that relate among the present invention are the common process condition, belong to the category that those skilled in the art are familiar with, and do not repeat them here.The foregoing description is the unrestricted technical scheme of the present invention in order to explanation only.Any technical scheme that does not break away from spirit and scope of the invention all should be encompassed in the middle of the patent claim of the present invention.
Claims (9)
1. the manufacture method of a high voltage direct current light-emitting diode chip for backlight unit is characterized in that, may further comprise the steps:
1) roughening heat conduction translate substrate increases the surface area that is used for upside-down mounting and bonding; On the heat conduction translate substrate, make the series circuit unit that is used for the connection of a plurality of led chips unit, will not belong to all the other substrate surface insulation processing of series circuit unit simultaneously;
2) make the led chip unit that independently adopts Sapphire Substrate, and independently the led chip unit carries out sorting;
3) well-graded independent led chip unit upside-down mounting is had on the heat conduction of the series circuit unit translate substrate preparing, connected successively in a plurality of led chips unit;
4) upside-down mounting all led chip unit on the heat conduction translate substrate are done the cryogenic high pressure bonding technology together again;
5) the described Sapphire Substrate of laser lift-off;
6) the led chip unit after cleaning is peeled off;
7) grind the heat conduction translate substrate that upside-down mounting has a plurality of led chips unit, draw according to the series circuit unit that makes on the heat conduction translate substrate and split thermal conductive substrate, form independently high voltage direct current LED.
2. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1, it is characterized in that: in the step 1), making series circuit unit is included in to make on the heat conduction translate substrate and is used for the electrode pad of led chip cell electrode pressure welding and the metal interconnected circuit of a plurality of led chips unit of connecting.
3. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1 is characterized in that: in the step 1), make described insulating barrier the heat conduction translate substrate surface passivation outside the series circuit unit is insulated.
4. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 3 is characterized in that: described insulating barrier adopts SiO
2A kind of among material, SiN, TiN, the TaN or the composite material of multiple composition wherein.
5. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1 is characterized in that: described heat conduction translate substrate adopts Si substrate or Cu substrate.
6. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1, it is characterized in that: the reverse installation process in the step 3) comprises: utilize reverse installation process that the N electrode of a plurality of led chips unit and P electrode are connected with series circuit unit on the described heat conduction translate substrate, thereby connected successively in a plurality of led chips unit.
7. the manufacture method of high voltage direct current light-emitting diode chip for backlight unit according to claim 1 is characterized in that: it is the 2-4 ton that described cryogenic high pressure bonding technology adopts pressure, and temperature is 100-300 degree centigrade.
8. a high voltage direct current LED chip construction is characterized in that, comprising: a plurality of led chips unit and a chip base;
Described led chip sequence of unit comprises n type semiconductor layer, active layer and p type semiconductor layer, and N electrode that is electrically connected with n type semiconductor layer and p type semiconductor layer respectively and P electrode, described N electrode and P electrode are positioned on the same one side of light-emitting diode chip for backlight unit unit;
Described chip base comprises thermal conductive substrate, is positioned at the insulating barrier on the thermal conductive substrate, and is positioned at the connect series circuit of a plurality of led chips unit of outer being used to of insulating barrier;
Described a plurality of led chips unit upside-down mounting is on described chip base, and connects successively in described a plurality of led chips unit.
9. high voltage direct current LED chip construction according to claim 8 is characterized in that: the series circuit of described a plurality of led chips unit that is used to connect comprises the electrode pad that is used for the pressure welding of led chip cell electrode and the metal interconnected circuit of a plurality of led chips unit of connecting.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110198674 CN102255012B (en) | 2011-07-15 | 2011-07-15 | Manufacturing method and structure of high-voltage direct-current light-emitting diode chip |
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| CN 201110198674 CN102255012B (en) | 2011-07-15 | 2011-07-15 | Manufacturing method and structure of high-voltage direct-current light-emitting diode chip |
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| CN102255012A true CN102255012A (en) | 2011-11-23 |
| CN102255012B CN102255012B (en) | 2013-03-20 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104167485A (en) * | 2014-08-21 | 2014-11-26 | 中国科学院半导体研究所 | Self-supported LED array light source structure |
| CN104183584A (en) * | 2014-08-19 | 2014-12-03 | 中国科学院半导体研究所 | LED array light source structure |
| US9082748B2 (en) | 2012-10-05 | 2015-07-14 | Micron Technology, Inc. | Devices, systems, and methods related to removing parasitic conduction in semiconductor devices |
| CN105340077A (en) * | 2013-05-10 | 2016-02-17 | 奥斯兰姆施尔凡尼亚公司 | Circuit configurable based on device orientation |
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| US6635902B1 (en) * | 2002-05-24 | 2003-10-21 | Para Light Electronics Co., Ltd. | Serial connection structure of light emitting diode chip |
| US20050199899A1 (en) * | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
| US20050253151A1 (en) * | 2002-08-29 | 2005-11-17 | Shiro Sakai | Light-emitting device having light-emitting elements |
| US20070102693A1 (en) * | 2003-12-24 | 2007-05-10 | Hideo Nagai | Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device |
| US20100032692A1 (en) * | 2006-11-21 | 2010-02-11 | Seoul Opto Device Co., Ltd. | Light emitting device for ac operation |
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2011
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635902B1 (en) * | 2002-05-24 | 2003-10-21 | Para Light Electronics Co., Ltd. | Serial connection structure of light emitting diode chip |
| US20050253151A1 (en) * | 2002-08-29 | 2005-11-17 | Shiro Sakai | Light-emitting device having light-emitting elements |
| US20070102693A1 (en) * | 2003-12-24 | 2007-05-10 | Hideo Nagai | Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device |
| US20050199899A1 (en) * | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
| US20100032692A1 (en) * | 2006-11-21 | 2010-02-11 | Seoul Opto Device Co., Ltd. | Light emitting device for ac operation |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9082748B2 (en) | 2012-10-05 | 2015-07-14 | Micron Technology, Inc. | Devices, systems, and methods related to removing parasitic conduction in semiconductor devices |
| US9577058B2 (en) | 2012-10-05 | 2017-02-21 | Micron Technology, Inc. | Devices, systems, and methods related to removing parasitic conduction in semiconductor devices |
| CN105340077A (en) * | 2013-05-10 | 2016-02-17 | 奥斯兰姆施尔凡尼亚公司 | Circuit configurable based on device orientation |
| CN105340077B (en) * | 2013-05-10 | 2018-07-10 | 奥斯兰姆施尔凡尼亚公司 | Circuit configurable based on device orientation |
| CN104183584A (en) * | 2014-08-19 | 2014-12-03 | 中国科学院半导体研究所 | LED array light source structure |
| CN104167485A (en) * | 2014-08-21 | 2014-11-26 | 中国科学院半导体研究所 | Self-supported LED array light source structure |
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| CN102255012B (en) | 2013-03-20 |
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