CN102254923B - 制造电子器件的方法 - Google Patents
制造电子器件的方法 Download PDFInfo
- Publication number
- CN102254923B CN102254923B CN201110128547.6A CN201110128547A CN102254923B CN 102254923 B CN102254923 B CN 102254923B CN 201110128547 A CN201110128547 A CN 201110128547A CN 102254923 B CN102254923 B CN 102254923B
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- China
- Prior art keywords
- layer
- forming
- antihalation
- curved convex
- material layer
- Prior art date
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-114708 | 2010-05-18 | ||
| JP2010114708A JP5735756B2 (ja) | 2010-05-18 | 2010-05-18 | 電子装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102254923A CN102254923A (zh) | 2011-11-23 |
| CN102254923B true CN102254923B (zh) | 2014-06-25 |
Family
ID=44972761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110128547.6A Active CN102254923B (zh) | 2010-05-18 | 2011-05-18 | 制造电子器件的方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8647816B2 (enExample) |
| JP (1) | JP5735756B2 (enExample) |
| CN (1) | CN102254923B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105372726A (zh) * | 2015-12-14 | 2016-03-02 | 中山大学 | 一种金刚石微透镜阵列及其制备方法 |
| KR102749135B1 (ko) * | 2019-03-06 | 2025-01-03 | 삼성전자주식회사 | 이미지 센서 및 이미징 장치 |
| JP2023505183A (ja) * | 2019-12-06 | 2023-02-08 | スリーエム イノベイティブ プロパティズ カンパニー | 光学層及び光学システム |
| CN111208961B (zh) * | 2019-12-30 | 2024-07-23 | 西安闻泰电子科技有限公司 | 将镜面影像映射到电子屏幕的装置及方法 |
| CN114078888A (zh) * | 2020-08-14 | 2022-02-22 | 格科微电子(上海)有限公司 | 光学指纹器件 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7713777B2 (en) * | 2007-08-31 | 2010-05-11 | Dongbu Hitek Co., Ltd. | Method for manufacturing image sensor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04268763A (ja) | 1991-02-23 | 1992-09-24 | Sony Corp | オンチップマイクロレンズの形成方法 |
| US5689372A (en) * | 1995-12-22 | 1997-11-18 | Eastman Kodak Company | Integral imaging with anti-halation |
| JP4186238B2 (ja) | 1996-08-30 | 2008-11-26 | ソニー株式会社 | マイクロレンズアレイの形成方法及び固体撮像素子の製造方法 |
| US5948281A (en) | 1996-08-30 | 1999-09-07 | Sony Corporation | Microlens array and method of forming same and solid-state image pickup device and method of manufacturing same |
| ATE395104T1 (de) | 1998-12-10 | 2008-05-15 | Color Access Inc | Zusamensetzung mit verbessertem lichtschutz und verfahren zu deren verwendung |
| US20060029890A1 (en) * | 2004-08-09 | 2006-02-09 | Sharp Laboratories Of America, Inc. | Lens formation by pattern transfer of a photoresist profile |
| JP4696927B2 (ja) | 2006-01-23 | 2011-06-08 | 凸版印刷株式会社 | マイクロレンズアレイの製造方法 |
| JP5045057B2 (ja) * | 2006-03-13 | 2012-10-10 | 東京エレクトロン株式会社 | プラズマ処理方法 |
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2010
- 2010-05-18 JP JP2010114708A patent/JP5735756B2/ja active Active
-
2011
- 2011-05-10 US US13/104,269 patent/US8647816B2/en active Active
- 2011-05-18 CN CN201110128547.6A patent/CN102254923B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7713777B2 (en) * | 2007-08-31 | 2010-05-11 | Dongbu Hitek Co., Ltd. | Method for manufacturing image sensor |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平10-148704A 1998.06.02 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5735756B2 (ja) | 2015-06-17 |
| CN102254923A (zh) | 2011-11-23 |
| JP2011243748A (ja) | 2011-12-01 |
| US20110287368A1 (en) | 2011-11-24 |
| US8647816B2 (en) | 2014-02-11 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |