CN102253601A - Method for improving thermostability of 7350 photoresist - Google Patents
Method for improving thermostability of 7350 photoresist Download PDFInfo
- Publication number
- CN102253601A CN102253601A CN2011102173196A CN201110217319A CN102253601A CN 102253601 A CN102253601 A CN 102253601A CN 2011102173196 A CN2011102173196 A CN 2011102173196A CN 201110217319 A CN201110217319 A CN 201110217319A CN 102253601 A CN102253601 A CN 102253601A
- Authority
- CN
- China
- Prior art keywords
- post bake
- disk
- photoresists
- hard
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention relates to a method for improving the thermostability of a 7350 photoresist, which comprises the following steps: a, a first UV hard-baking process: putting a wafer with the 7350 photoresist into a hard-baking device to carry out hard-baking, wherein the starting temperature of hard-baking is 100-110 DEG C, and the retention time of the starting temperature is 80-90 seconds; then raising the temperatures of the wafer and the 7350 photoresist in the hard-baking device to 123-137 DEG C within 47-53 seconds; and b, a second UV hard-baking process: putting the wafer into the hard-baking device to carry out hard-baking again, wherein the starting temperature of hard-baking is 114-126 DEG C, and the retention time of the starting temperature is 44-50 seconds; and then raising the temperatures of the wafer and the 7350 photoresist in the hard-baking device to190-210 DEG C within 95-105 seconds. The method provided by the invention has the advantages that through implementing the first UV hard-baking process, most of a solvent in the 7350 photoresist is volatilized, and through implementing the second UV hard-baking process, the 7350 photoresist is hardened so as to satisfy the requirements of taking the 7350 photoresist as a mask, so that the effect of etching metal strips (0.6 mu m) can be achieved; the method can be compatible with a conventional hard-baking device without adding other devices; the method is simple in process and strong in practical applicability; and the application scope of AMATP5000MXP is expanded.
Description
Technical field
The present invention relates to a kind of method that improves thermal stability, the method for especially a kind of raising 7350 photoresist thermal stabilitys is specifically utilized the method for 7350 photoresist etchings, 0.5 μ m bonding jumper.
Background technology
7350 photoresists are positive photoresists, mainly by resin, emulsion, and different material such as solvent mix.The characteristics of described 7350 photoresists are resolution height, but poor heat stability.In temperature when baking more than 130 ℃, 7350 photoresists will soften and produce deformation, so can't be as the mask of metal erosion in the RIE(reactive ion etching) metal plasma equipment etches the bonding jumper of 0.5um; But must adopt 7350 photoresists at RIE equipment etching 0.5 μ m bonding jumper.In order to increase the thermal stability of 7350 photoresists, usually need be to the photoresist post bake, 7350 photoresists use the UV post bake, make the photoresist resin be cross-linked to form the thin surperficial duricrust of one deck, increase the thermal stability of photoresist, heatproof can be brought up to 130 ℃, but still can not be as mask at RIE equipment corrosion metal.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, the method for a kind of raising 7350 photoresist thermal stabilitys be provided, its can make 7350 photoresists in RIE equipment as the mask etching bonding jumper, processing step is simple, and is practical.
According to technical scheme provided by the invention, a kind of method of raising 7350 photoresist thermal stabilitys, described method comprises the steps:
A, UV post bake for the first time: the disk that will have 7350 photoresists is positioned over post bake in the post bake equipment, etches corresponding pattern on described 7350 photoresists; The post bake initial temperature is 100 ℃ ~ 110 ℃; The initial temperature retention time is 80 ~ 90 seconds, makes in 47 ~ 53 second time then that the temperature of disk and 7350 photoresists rises to 123 ℃ ~ 137 ℃ in the post bake equipment;
B, get sheet: disk is shifted out post bake equipment, and make the temperature of disk reduce to the normal temperature state;
C, UV post bake for the second time: above-mentioned disk is positioned over post bake in the post bake equipment once more, and the post bake initial temperature is 114 ℃ ~ 126 ℃, and temperature hold-time is 44 ~ 50 seconds in fact; Make in 95 ~ 105 seconds then that the temperature of disk and 7350 photoresists rises to 190 ℃ ~ 210 ℃ in the post bake equipment;
D, get sheet: above-mentioned disk is shifted out post bake equipment.
Above-mentioned disk that obtains and 7350 photoresists that are positioned on the disk are positioned on the RIE metal erosion equipment, and the mask effect by 7350 photoresists etches the bonding jumper on the disk.
Advantage of the present invention: by the UV post bake technology first time, make most of solvent evaporates in 7350 photoresists, and, make 7350 photoresist hardening by the UV post bake technology second time, to satisfy of the requirement of 7350 photoresists, can finish the requirement of 0.5 μ m bonding jumper etching as mask; Post bake hardware compatibility with routine does not increase miscellaneous equipment; Technology is simple, and is practical; Enlarged the usable range of AMAT P5000MXP.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
In order to make 7350 photoresists can adapt to the mask needs of RIE etching apparatus, satisfy the requirement of metal level etching, realize by following processing step:
A, UV post bake for the first time: the disk that will have 7350 photoresists is positioned over post bake in the post bake equipment, etches corresponding pattern on described 7350 photoresists; The post bake initial temperature is 105 ℃; The initial temperature retention time is 85 seconds, makes in 50 second time then that the temperature of disk and 7350 photoresists rises to 130 ℃ in the post bake equipment; UV post bake equipment can adopt Fusion Bake; Wherein, in the temperature-rise period, UV lamp switch order is on the UV post bake equipment in 50 second time: standard-sized sheet 5 seconds, pass 20 seconds, half-open 20 seconds, standard-sized sheet 20 seconds, pass 20 seconds, half-open 20 seconds, standard-sized sheet 30 seconds; Above-mentioned time and temperature value all can fluctuate in 5% scope;
B, get sheet: disk is shifted out post bake equipment, and make the temperature of disk reduce to the normal temperature state; Disk and on the temperature of 7350 photoresists reduce to normal temperature from 130 ℃ after, can be used in the following process needs;
C, UV post bake for the second time: above-mentioned disk is positioned over post bake in the post bake equipment once more, and the post bake initial temperature is 120 ℃, and temperature hold-time is 47 seconds in fact; Make in 100 seconds then that the temperature of disk and 7350 photoresists rises to 200 ℃ in the post bake equipment; Wherein, in the temperature-rise period, UV lamp switch order is on the UV post bake equipment in 100 second time: standard-sized sheet 7 seconds, pass 20 seconds, half-open 20 seconds, standard-sized sheet 20 seconds, pass 20 seconds, half-open 20 seconds, standard-sized sheet 40 seconds; Above-mentioned time and temperature value all can fluctuate in 5% scope;
D, get sheet: above-mentioned disk is shifted out post bake equipment.
Bonding jumper at RIE equipment etching 0.5um must adopt 7350 photoresists, and the present invention finishes by adopting during the UV post bake first time temperature to be lower than under 130 ℃, mainly is to allow most of solvent evaporates in 7350 photoresists; And finish under for the second time adopting 200 ℃ during the UV post bake, mainly make 7350 photoresist hardening, thermal stability is improved; Can satisfy the requirement as mask on the RIE etching apparatus of 7350 photoresists.
Above-mentioned disk that obtains and 7350 photoresists that are positioned on the disk are positioned on the RIE metal erosion equipment, and the mask effect by 7350 photoresists etches the metal level on the disk.RIE metal erosion equipment adopts AMAT P5000MXP, during corrosion,, can access the corresponding metal bar by the pattern on 7350 photoresists, then dry method remove photoresist and EKC remove polymkeric substance, what the bonding jumper pattern of 0.5um was complete transfers on the disk from 7350 photoresist masks.EKC solution is available from EKC Technology, Inc., Hayward, CA.EKC solution is that an amine is main stripper (amine-based stripper), mainly is azanol, organic solvent, suppress mordant and water and form the photoresist that the substrate surface of can going out is residual.
The present invention makes most of solvent evaporates in 7350 photoresists by the UV post bake technology first time, and by the UV post bake technology second time, makes 7350 photoresist hardening, to satisfy the requirement of 7350 photoresists as mask, can finish the requirement of 0.5 μ m bonding jumper etching; Post bake hardware compatibility with routine does not increase miscellaneous equipment; Technology is simple, and is practical; Enlarged the usable range of AMAT P5000MXP.
Claims (2)
1. a method that improves 7350 photoresist thermal stabilitys is characterized in that described method comprises the steps:
(a), UV post bake for the first time: the disk that will have 7350 photoresists is positioned over post bake in the post bake equipment, etches corresponding pattern on described 7350 photoresists; The post bake initial temperature is 100 ℃ ~ 110 ℃; The initial temperature retention time is 80 ~ 90 seconds, makes in 47 ~ 53 second time then that the temperature of disk and 7350 photoresists rises to 123 ℃ ~ 137 ℃ in the post bake equipment;
(b), get sheet: disk is shifted out post bake equipment, and make the temperature of disk reduce to the normal temperature state;
(c), UV post bake for the second time: above-mentioned disk is positioned over post bake in the post bake equipment once more, and the post bake initial temperature is 114 ℃ ~ 126 ℃, and temperature hold-time is 44 ~ 50 seconds in fact; Make in 95 ~ 105 seconds then that the temperature of disk and 7350 photoresists rises to 190 ℃ ~ 210 ℃ in the post bake equipment;
(d), get sheet: above-mentioned disk is shifted out post bake equipment.
2. according to the method for the described raising 7350 photoresist thermal stabilitys of claim 1, it is characterized in that: above-mentioned disk that obtains and 7350 photoresists that are positioned on the disk are positioned on the ECR metal erosion equipment, mask effect by 7350 photoresists etches the metal level on the disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110217319 CN102253601B (en) | 2011-08-01 | 2011-08-01 | Method for improving thermostability of 7350 photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110217319 CN102253601B (en) | 2011-08-01 | 2011-08-01 | Method for improving thermostability of 7350 photoresist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102253601A true CN102253601A (en) | 2011-11-23 |
| CN102253601B CN102253601B (en) | 2013-04-24 |
Family
ID=44980932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110217319 Active CN102253601B (en) | 2011-08-01 | 2011-08-01 | Method for improving thermostability of 7350 photoresist |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102253601B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104536268A (en) * | 2014-12-26 | 2015-04-22 | 中国电子科技集团公司第十一研究所 | Method for hardening thick resist of photoresist |
| CN105047546A (en) * | 2014-05-02 | 2015-11-11 | 朗姆研究公司 | Plasma dry strip pretreatment to enhance ion implanted resist removal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050250052A1 (en) * | 2004-05-10 | 2005-11-10 | Nguyen Khe C | Maskless lithography using UV absorbing nano particle |
| CN101122738A (en) * | 2006-08-08 | 2008-02-13 | 上海广电电子股份有限公司 | Photo-etching carrying-away moulding method |
| CN101320682A (en) * | 2008-06-13 | 2008-12-10 | 华中科技大学 | Method for improving ohm contact performance of metal-P type semiconductor |
| CN101852893A (en) * | 2009-03-30 | 2010-10-06 | 中国科学院半导体研究所 | Method for performing deep etching on silicon dioxide by taking photo-resist as mask |
-
2011
- 2011-08-01 CN CN 201110217319 patent/CN102253601B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050250052A1 (en) * | 2004-05-10 | 2005-11-10 | Nguyen Khe C | Maskless lithography using UV absorbing nano particle |
| CN101122738A (en) * | 2006-08-08 | 2008-02-13 | 上海广电电子股份有限公司 | Photo-etching carrying-away moulding method |
| CN101320682A (en) * | 2008-06-13 | 2008-12-10 | 华中科技大学 | Method for improving ohm contact performance of metal-P type semiconductor |
| CN101852893A (en) * | 2009-03-30 | 2010-10-06 | 中国科学院半导体研究所 | Method for performing deep etching on silicon dioxide by taking photo-resist as mask |
Non-Patent Citations (2)
| Title |
|---|
| 《微电子技术》 19940228 李祥 等 "等离子刻蚀工艺中UV坚膜技术研究" 36-39 1-2 第22卷, 第1期 * |
| 李祥 等: ""等离子刻蚀工艺中UV坚膜技术研究"", 《微电子技术》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047546A (en) * | 2014-05-02 | 2015-11-11 | 朗姆研究公司 | Plasma dry strip pretreatment to enhance ion implanted resist removal |
| CN104536268A (en) * | 2014-12-26 | 2015-04-22 | 中国电子科技集团公司第十一研究所 | Method for hardening thick resist of photoresist |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102253601B (en) | 2013-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1715961B1 (en) | Spin-on protective coatings for wet-etch processing of microelectronic substrates | |
| JP5590364B2 (en) | Photoresist stripping composition | |
| TW200406650A (en) | Cleaning composition for removing resists and manufacturing method of semiconductor device | |
| CN102643027A (en) | Glass etching liquid and glass etching method | |
| TW201410774A (en) | Composition for pattern formation and pattern forming method | |
| CN106565952A (en) | Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the composition | |
| KR20160136316A (en) | Pattern-forming method, resin, and resist underlayer forming composition | |
| KR101907217B1 (en) | Method for forming pattern | |
| TW201536912A (en) | Cleaning solution for removal of photo-resist etching residues with low etching ability and use of cleaning solution for removal of photo-resist etching residues with low etching ability | |
| CN102253601B (en) | Method for improving thermostability of 7350 photoresist | |
| CN101578341A (en) | Composition and method for stripping organic coatings | |
| EP3268810B1 (en) | Compositions and methods that promote charge complexing copper protection during low pka driven polymer stripping | |
| WO2016151645A1 (en) | Resist stripping liquid | |
| KR101556276B1 (en) | Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition | |
| CN103576445A (en) | Photoetching method for photoresist as silicon groove etching mask | |
| WO2018008734A1 (en) | Film-forming composition, film formation method, and directed self-assembly lithography process | |
| JPWO2009096480A1 (en) | Hard mask removal composition and removal method | |
| CN108121176A (en) | A kind of low etching photoresist residual washing liquid | |
| CN105204301B (en) | Resist remover compositions and the method for removing resist using it | |
| CN103617945B (en) | A kind of restorative procedure of ic core plate electrode | |
| CN103773626B (en) | A kind of cleaning fluid of the removal photoresistance etch residues of low etching | |
| US20150064928A1 (en) | Photoresist removal | |
| CN1682155B (en) | Photoresist stripper composition | |
| KR20180020148A (en) | Method for producing polymer for electronic materials and polymer for electronic materials obtained by said production method | |
| TW201629645A (en) | Photoresist stripping solution |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |