CN101122738A - Photo-etching carrying-away moulding method - Google Patents
Photo-etching carrying-away moulding method Download PDFInfo
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- CN101122738A CN101122738A CNA2006100298088A CN200610029808A CN101122738A CN 101122738 A CN101122738 A CN 101122738A CN A2006100298088 A CNA2006100298088 A CN A2006100298088A CN 200610029808 A CN200610029808 A CN 200610029808A CN 101122738 A CN101122738 A CN 101122738A
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Abstract
The invention discloses a photoengraving separation forming method, relating to the art of film forming technology. The method is wet photoengraving, in which the photoresist is coated with metal or other films by steaming after he photoresist is formed. The specific manufacturing steps are as follow: (1) preparing a substrate; (2) painting the photoresist, which is a negative photoresist with pure organic solvent and the thickness of which is 1to7micron; (3) making preheating; (4) exposing; (5) hardening; (6) developing, the developing solvent is a pure organic solvent; (7) rinsing, the rinsing solvent is a pure organic solvent; 8) blowing dry; 9) making surface cleaning; (10) making coating; (11) lifting away the film for molding, the part with photoresist falls away with the photoresist and other part of the film remains so as to form the required pattern. The invention is an effective molding method for high-accuracy lines or patterns with advantages of low cost and simple process.
Description
Technical field
The invention belongs to technical field of flat panel display, it is graphical particularly to relate to a kind of inorganic material film that can make, and don't influences the method that the photoetching of film itself or its other film performance of lower floor is lifted away from.
Technical background
General film shaped method has direct mask means, wet carve, do and carve or laser quarter etc.Directly mask is simple suitable way to the device of rough grade, but for the shaping of high-precision meticulous lines or complex figure, directly the mask rule is difficult to realize, carves or laser forming etc. needs expensive equipment and do; Traditional wet carving method generally all is to use moisture chemical reagent, graphically can adopt this method to the insensitive inorganic material film of moisture.But in the manufacture process of flat-panel monitor, some needs the film of photoetching is very sensitive to water, perhaps the film of photo-etched shaping itself is insensitive to water, but be subject to the influence of water and therefore mis-behave needs a kind of photoetching solution at this situation at the film of other material of its lower floor.
Summary of the invention
At the defective that exists in the above-mentioned prior art, technical matters to be solved by this invention provides a kind of with low cost, and technology is simple and to the effective photo-etching carrying-away moulding method of the shaping of high precision lines or figure.
In order to solve the problems of the technologies described above, the invention provides a kind of photo-etching carrying-away moulding method, the method is carved for wet, evaporation metal or other film thereon after being shaped by photoresist, make the photoresist demoulding to reach the film that is lifted away from the photoresist then, make the method for its shaping; Concrete making step is:
1) substrate is prepared;
2) coating photoresist, photoresist solvent is the negative photosensitive type photoresist of pure organic solution, the thickness of photoresist (control) is at 1 to 7 micron; This glue can form upside-down triangle shape by CONTROL PROCESS, helps follow-up film like this and is lifted away from.If electrode forming can not be lifted away from yet,, directly cut off electrode by controlling negative glue upside-down triangle shape and thickness; Rotating speed and the viscosity of glue of the thickness of photoresist by spin coater waits and controls, and can adjust according to the required thickness that is lifted away from film;
3) preceding baking is carried out in preceding baking behind the coated photoresist;
4) exposure exposes after the preceding baking, adjusts concrete resist exposure figure according to arts demand;
5) post bake (back baking) toasts post bake, and the post bake time, whether post bake was decided with the photoresist characteristics with the photoresist thickness adjusted;
6) develop, developer solution is pure organic solution, and development time is 60s ~ 180s, waits with photoresist thickness and regulates;
7) rinsing, rinsing liquid are pure organic solution, wash repeatedly more than one time;
8) dry up, after development, rinsing, do with the compression drying air-blowing; Make and form the photoresist figure on the substrate;
9) cleaning surfaces is handled, and makes the pollution of the residual photoresist of the surface removal that needs plated film or other chemicals.
10) plated film is selected the plated film mode as required, cooperates exposure figure to select the baffle shapes of plated film;
11) be lifted away from, liquid parting is pure organic solution or water-free other solution, and film is lifted away from shaping, and the part of photoresist is arranged, and film is along with photoresist breaks away from together, and the film of other parts then remains, and figure is shaped.
Further, the substrate in the described step 1) can be that the light glass substrate also can be the coated glass substrate that is shaped on the single or multiple lift film pattern in advance.
Further, described step 2) in, the thickness of photoresist (control) is at 3 to 5 microns.
Further, the photoresist coating method is spin coating described step 2).
Further, the photoresist coating method is roller coating described step 2).
Further, baking and described step 5) post bake are by the hot plate type of heating before the described step 3).
Further, preceding baking of described step 3) and described step 5) post bake are for passing through oven heating.
Further, baking and described step 5) post bake are by the Infrared Heating mode before the described step 3).
Further, described step 6) visualization way, described step 7) rinse method and described step 11) are lifted away from the demoulding mode and are respectively immersion way.
Further, described step 6) visualization way, described step 7) rinse method and described step 11) are lifted away from the demoulding mode and are respectively the spray mode.
Further, described step 6) visualization way, described step 7) rinse method and described step 11) are lifted away from the demoulding mode and are respectively the mode that combines with spray of soaking.
Further, described step 9) cleaning surfaces is handled, and uses to contain oxygen plasma bombardment treatment substrate; Can dispose like this may be residual after the development photoresist, the contact interface when making plated film more cleans, adhesive force improves.
Further, cooperate with a metal frame during described step 10) metallized electrode film and block the part that does not need electrode evaporation, coating film area is limited in the part that makes photoresist insulated column between electrode and electrode by lithography, so only be lifted away from insulated column, be easy to lift, and the time that needs is short, and is effective.
Further, except the electrode part, the photoresist protection is all arranged during described step 10) metallized electrode film at whole screen surfaces; Can block without metal frame when steaming top electrode like this, can certainly cooperate with metal frame, faster than being lifted away from speed like this without metal frame, better effects if.
Further, the film that is shaped in the described step 10) plated film is conductive material (comprising metal and ITO).
Further, the film that is shaped in the described step 10) plated film is insulating material (comprising dielectric material).
Further, the film that is shaped in the described step 10) plated film is semiconductor material (comprising semiconductive luminescent materials).
Further, thin film-forming method is an electron beam evaporation deposition in the described step 10) plated film.
Further, thin film-forming method is a magnetron sputtering plating in the described step 10) plated film.
Further, the baffle plate figure that described step 4) adopts when exposing the figure of used mask and described step 10) plated film is worked in coordination, and specifically adjusts mutually according to actual process.
Photo-etching carrying-away moulding method of the present invention is applied to the top electrode moulding of inorganic EL (EL) panel display screen (2 inches, 128 * 64 pixels), and compares with direct mask means shaping top electrode.Find that water-free organic reagent has reduced the destruction to lower floor's luminescent film and deielectric-coating in the device to a great extent; To adopting the carrying-away moulding method and the inorganic el panel of directly mask means making to test, though drawing the screen threshold voltage that is lifted away from the method making, the result increases, the L-V rate of curve is almost suitable with the screen of direct mask.The difference of both saturated brightness is also little.
Comprehensively, the method for using invention is carried out photoetching to the top electrode of inorganic EL display device and is lifted away from shaping, and is less to the El element Effect on Performance, and with low cost, and technology is simple, and is effective to the shaping of high precision lines or figure.
Description of drawings
Figure 1A is photoresist figure (50X) synoptic diagram after the embodiment of the invention is developed;
Figure 1B is (50X) synoptic diagram behind the embodiment of the invention electron beam evaporation of aluminum;
Fig. 2 is that the embodiment of the invention is lifted away from back figure (50X) synoptic diagram;
Fig. 3 is figure (50X) synoptic diagram after the embodiment of the invention 1 is developed;
Fig. 4 is 2 inches inorganic EL screen L-V curve synoptic diagrams in the embodiment of the invention 1;
Fig. 5 is figure (50X) synoptic diagram after the embodiment of the invention 2 is developed.
Embodiment
Below in conjunction with description of drawings embodiments of the invention are described in further detail, but present embodiment is not limited to the present invention, every employing analog structure of the present invention and similar variation thereof all should be listed protection scope of the present invention in.
A kind of photo-etching carrying-away moulding method that the embodiment of the invention provided, the method is carved for wet, and evaporation metal or other film thereon after being shaped by photoresist make the photoresist demoulding to reach the film that is lifted away from the photoresist then, make the method for its shaping; Concrete making step is:
1) substrate is prepared, be ready to have 2 inches (128 * 64 pixels) inorganic EL matrix panel substrate of being with the bottom electrode of drawing, following dielectric layer, luminescent layer and going up dielectric layer, about 32 * the 32mm of device light-emitting area, luminescent film adopts classical inorganic EL luminescent material ZnS:Mn in the test; Film among the present invention can directly be deposited on the glass sheet, also can deposit on there is the film of other material in lower floor.
2) coating photoresist, utilize spin coater on substrate, to be coated with photoresist, photoresist is a kind of negative photosensitive type photoresist, this glue can form upside-down triangle shape by CONTROL PROCESS, the electrode that helps the back step like this is lifted away from, perhaps be not lifted away from,, can directly cut off electrode by controlling negative glue upside-down triangle shape and thickness; Rotating speed and the viscosity of glue of the thickness of photoresist by spin coater waits and controls, and can adjust according to the required thickness that is lifted away from electrode, and the scope that general photoresist thickness can be accomplished is 3um ~ 5um; The photoresist coating method of mentioning among the present invention has spin coating, roller coating etc., and the thickness of photoresist can be controlled at 1 to 7 micron, is the best with 3 to 5 microns.
3) preceding baking is carried out in preceding baking behind the coated photoresist, preceding baking step can heat by hot plate, also can pass through baking oven, other interchangeable type of heating such as infrared;
4) exposure exposes after the preceding baking;
5) post bake (back baking) toasts post bake, and the post bake time is with the photoresist thickness adjusted; The post bake step can heat by hot plate, also can pass through baking oven, other interchangeable type of heating such as infrared;
6) develop, developer solution adopts pure organic solution, and development time is that 60s ~ 180s does not wait, and also waits with photoresist thickness and regulates, and visualization way has immersion way, spray mode, or both combinations, adopts immersion way in this test;
7) rinsing, rinsing liquid also are pure organic solution, and rinse method has immersion way, spray mode, or both combinations, adopt immersion way in this test;
8) dry up, after development, rinsing, do with the compression drying air-blowing; Just formed the photoresist figure on the substrate, shown in Fig. 1 (a);
9) cleaning surfaces is handled, and makes the pollution of the residual photoresist of the surface removal that needs plated film or other chemicals.In order to make adhesion of coating film better, can before plated film, use to contain oxygen plasma bombardment treatment substrate, can dispose the residual photoresist in back that develops like this, institute's plated film contact interface is more cleaned, film adheres to more firmly.
10) plated film, film can be metallic film, also can be deielectric-coating, luminescent film or other material film.Concrete resist exposure figure can be adjusted according to arts demand.Now being lithographically example with being lifted away from of metallic film (electrode) is illustrated.A kind of mode can only make electrode and interelectrode insulated column by lithography, blocks the part that does not need electrode evaporation with a metal frame cooperation when the evaporation upper electrode film, so only is lifted away from insulated column, be easy to lift, and the time that needs is short effective; Another kind of except the electrode part, at whole screen surfaces the photoresist protection is arranged all, can block without metal frame when steaming top electrode like this, can certainly cooperate with metal frame, faster than being lifted away from speed like this without metal frame; After the photoresist figure was shaped by developing, deposited metal film was this time tested and is used metallic aluminium, shown in Fig. 1 (b) thereon.Usable range of the present invention is film shaped.Film among the present invention is film forming in several ways, for example electron beam evaporation deposition, magnetron sputtering plating etc.The baffle plate figure that adopts when exposure figure of used mask and evaporated film among the present invention can be worked in coordination, and specifically adjusts mutually according to actual process;
11) being lifted away from, behind the good metal film of evaporation, next is that metal film is lifted away from shaping, and the part of photoresist is arranged, and metal film is along with photoresist breaks away from together, and the metal film of other parts then remains, and the top electrode figure is just basic like this is shaped.As shown in Figure 2, the time that is lifted away from, is removed photoresist than being easier to if be lifted away from the electrode of line strip by the area decision that is lifted away from.
Embodiment 1:
Make 2 inches of inorganic EL (128x64 pixel) matrix panel top electrode, technological parameter is as shown in table 1 below.Figure as shown in Figure 3 behind the film film exposure imaging that uses in this example, photoresist has only formed electrode and interelectrode insulated column, when the evaporation top electrode, adds a metal frame baffle plate on screen, to not need the part of electrode evaporation to block, only insulated column need be lifted when being lifted away from and just can.The electrode pattern that photoetching is lifted away from out is as above shown in Figure 2, electrode line edge after being lifted away from is smooth inadequately, this is that film film version is relevant with the exposure employing, because the precision of film film version causes the photoresist lines edge that develops smooth inadequately inadequately, lines are unsaturated, directly cause the metal wire that is lifted away from out also rough, if make film into the Cr version, above situation will improve.
Table 1: embodiment 1 technological parameter
| Matrix panel | 2 inches matrix panel A# |
| The glue model | Glue 60cp (Japanese Zeon) is born in ZPN 1168 photoetching |
| Rotating speed | 400 rev/mins of spin coaters, 9s; 700 rev/mins, 30s |
| Preceding baking | 112 ℃ of hot plates 3 minutes |
| Exposure | 365nm lamp source, 90mJ; Mask: film film |
| The back baking | 112 ℃ kept 3 minutes |
| Develop | Soak 60s in the BN series organic reagent; Back figure (Beijing Inst. of Chemical Reagent) as shown in Figure 3 develops |
| Rinsing | Pure organic reagent washes (Beijing Inst. of Chemical Reagent) repeatedly twice |
| Dry up | Dried compressed air dries up |
| Aluminize | Band metal frame baffle plate, the oxygen plasma bombardment was handled 2 minutes; Electron beam evaporation deposition 2A/S P=3.6E-3; Thickness 150nm |
| Be lifted away from | Be immersed in the acetone solution 10 minutes, acetone rinsing, compressed gas dries up |
A# has carried out the L-V test to screen, and compare with screen B# that direct mask means is made, the result is as shown in table 2 below, the L-V curve is seen Fig. 4, the relatively direct screen B# that makes of mask means of the screen A# that makes of this method as can be seen from the results, and the emission threshold threshold voltage has some raisings, brightness has decay slightly, the point of striking sparks also has some to increase, but the saturated brightness of two screens are suitable, and L-V rate of curve aspect is almost suitable with the screen B# of direct mask manufacture with the screen A# of this method making as can be seen from Figure 4.Though will unavoidably will pass through processes such as reagent immersion with this method substrate, but water-free organic reagent has reduced the destruction to lower floor's luminescent film and deielectric-coating in the device to a great extent, obtained comparatively ideal result,, will obtain even more ideal result by further technologic improvement.
The inorganic EL screen of table 2:2 inch L-V test result
Embodiment 2:
Make 2 inches of inorganic EL (128x64 pixel) matrix panel top electrode, technological parameter is shown in table 1 among the embodiment 1.Post-develop is carved glue and has been covered whole screen in this example, only reserves the part and the embodiment 1 that need electrode evaporation and compares, and the film film figure that exposes used changes, and the figure behind the exposure imaging as shown in Figure 5.So directly the evaporation metal electrode is lifted away from then, also can add a metal frame when the evaporation metal electrode on screen as embodiment 1, will not need the part of electrode to block, and it is short that both relatively add the used time of being lifted away from of metal frame.The time that is lifted away from, the big more used time of area was then of a specified duration more by the area decision that is lifted away from metal film.It is of a specified duration more to be lifted away from the time, and the time of device contacts solution is just long more, and the influence to device performance is then big more like this, so make the area that is lifted away from little in actual use as far as possible, the time of device contacts solution is short.
Embodiment 3:
Make 2 inches of inorganic EL (128x64 pixel) matrix panel top electrode, technological parameter is as shown in table 3.Shown in Figure 5 among figure such as the embodiment 2 behind the film film exposure imaging that uses in this example, photoresist has covered whole screen, only reserves the part that needs electrode evaporation, cooperates the evaporation top electrode with metal frame.Comparing with embodiment 2, changed employed photoresist, is the BN series minus glue of homemade Beijing Inst. of Chemical Reagent.At photoresist used in the example, be lifted away from the also corresponding BN of the being changed to series matching of agents useful for same liquid parting, be lifted away from arts demand liquid parting is heated to 120 ℃ of coolings again, be incubated then at 80 ℃ and carry out demoulding, used of long duration of the time ratio embodiment that needs 1,2, and 80 ℃ liquid parting has also caused some bad influences to device.This may be relevant with the composition of photoresist, the glue that uses among the relative embodiment 1 of the photoresist that uses in this example, and good with the adhesion of substrate, the gumminess height can obtain thicker glued membrane as required; But its supporting liquid parting needs heating, and this is a unfavorable factor to device.Liquid parting also can adopt the mixed solution of toluene and methyl alcohol, and concrete proportioning and technology remain further to be adjusted.
Table 3: embodiment 3 technological parameters
| The glue model | BN308 bears glue 300cp (Beijing Inst. of Chemical Reagent) |
| Rotating speed | 500 rev/mins, 9s; 1700 rev/mins of 30s |
| Preceding baking | 100 ℃ 5 minutes |
| Exposure | 120mJ; Mask: film film (the whole screen of glue covers) |
| The back baking | Do not have |
| Develop | The supporting developer solution 180s of BN |
| Rinsing | The supporting rinsing liquid of BN washes twice repeatedly |
| Dry up | Dried compressed air dries up |
| Evaporation of aluminum | The band metal frame, the oxygen plasma bombardment was handled 2 minutes; Electron beam evaporation deposition 2A/S P=3.6E-3; Thickness 150nm |
| Be lifted away from | In 80 ℃ of BN series liquid partings, 20 minutes |
Embodiment 4:
Technological parameter is with embodiment 1, and the top electrode metal makes transparent ITO electrode into, and ITO adopts the sputtering technology plated film.Heating if desired in the coating process, complexity in the time of can influence the photoresist demoulding, thus when plated film, will be clear that high energy is born temperature, preferably make coating temperature be lower than this temperature, otherwise will be difficult to take off through the photoresist film of high temperature.
Embodiment 5:
Change the photoresist among the embodiment 3 into RFJ-220 negative photoresist (the auspicious red company in Suzhou), viscosity is 300cp, the also corresponding matched reagent that changes the said firm into of other auxiliary reagents.Concrete technological parameter is as shown in table 4 below.With embodiment 3, liquid parting also needs to be heated to 80 ℃, and device is had certain influence, will obtain good effect if improved demoulding technology with the result of this glue.Technology is similar therewith, also can change the negative glue of PKP II series photoetching of U.S. Transene company with photoresist into, the also corresponding matched reagent that changes the said firm into of other auxiliary reagents, technological parameter is according to glue and recommend technology to adjust.
Table 4: embodiment 5 technological parameters
| The glue model | RFJ-220 300cp |
| Rotating speed | 300 rev/mins, 9s; 3000 rev/mins of 30s |
| Preceding baking | 90℃90s |
| Exposure | 120mJ; Mask: film film |
| The back baking | Do not have |
| Develop | RFX-2277 room temperature 60s |
| Rinsing | RFP-2202 washes twice repeatedly |
| Dry up | Dried compressed air dries up |
| Evaporation of aluminum | The band metal frame, the oxygen plasma bombardment was handled 2 minutes; Electron beam evaporation deposition 2A/S P=3.6E-3; Thickness 150nm |
| Be lifted away from | In 80 ℃ of RBL-2304 series liquid partings, 20 minutes |
Claims (23)
1. photo-etching carrying-away moulding method, described method is a wet etching, it is characterized in that, concrete making step is:
1) substrate is prepared;
2) coating photoresist, photoresist solvent is the negative photosensitive type photoresist of pure organic solution, the thickness of photoresist is at 1 to 7 micron;
3) preceding baking;
4) exposure;
5) post bake (back baking);
6) develop, developer solution is pure organic solution, and development time is 60s ~ 180s with the photoresist thickness adjusted;
7) rinsing, rinsing liquid are pure organic solution, wash repeatedly more than one time;
8) dry up, do, make and form the photoresist figure on the substrate with the compression drying air-blowing;
9) cleaning surfaces is handled
10) plated film;
11) be lifted away from, film is lifted away from shaping, the part of photoresist is arranged, film is along with photoresist breaks away from together, and the film of other parts then remains, and figure is shaped substantially.
2. photo-etching carrying-away moulding method according to claim 1 is characterized in that, the substrate in the described step 1) is the light glass substrate, is shaped on the coated glass substrate of single or multiple lift film pattern in advance.
3. photo-etching carrying-away moulding method according to claim 1 is characterized in that, described step 2) in, the thickness of photoresist (control) is at 3 to 5 microns.
4. photo-etching carrying-away moulding method according to claim 1 is characterized in that, described step 2) in the photoresist coating method be spin coating.
5. photo-etching carrying-away moulding method according to claim 1 is characterized in that, described step 2) in the photoresist coating method be roller coating.
6. photo-etching carrying-away moulding method according to claim 1 is characterized in that, baking and described step 5) post bake are for passing through the hot plate type of heating before the described step 3).
7. photo-etching carrying-away moulding method according to claim 1 is characterized in that, baking and described step 5) post bake are for passing through oven heating before the described step 3).
8. photo-etching carrying-away moulding method according to claim 1 is characterized in that, baking and described step 5) post bake are for passing through the Infrared Heating mode before the described step 3).
9. photo-etching carrying-away moulding method according to claim 1 is characterized in that, described step 6) visualization way, described step 7) rinse method and described step 11) are lifted away from the demoulding mode and are respectively immersion way.
10. photo-etching carrying-away moulding method according to claim 1 is characterized in that, described step 6) visualization way, described step 7) rinse method and described step 11) are lifted away from the demoulding mode and are respectively the spray mode.
11. photo-etching carrying-away moulding method according to claim 1 is characterized in that, described step 6) visualization way, described step 7) rinse method and described step 11) are lifted away from the demoulding mode and are respectively the mode that combines with spray of soaking.
12. photo-etching carrying-away moulding method according to claim 1 is characterized in that, the cleaning surfaces in the described step 9) is treated to plasma surface treatment.
13. photo-etching carrying-away moulding method according to claim 12 is characterized in that, the process gas that uses in the described plasma surface treatment is argon/oxygen gas mixture.
14. photo-etching carrying-away moulding method according to claim 12 is characterized in that, the process gas that uses in the described plasma surface treatment is purity oxygen.
15. photo-etching carrying-away moulding method according to claim 1, it is characterized in that, only make electrode and interelectrode insulated column by lithography on the substrate in the described step 10) coating film area, when the electrode evaporation film, block the part that does not need electrode evaporation with a metal frame cooperation.
16. photo-etching carrying-away moulding method according to claim 1 is characterized in that, except required electrode pattern part, at whole screen surfaces the photoresist protection is arranged all in the described step 10) plated film.
17. photo-etching carrying-away moulding method according to claim 1 is characterized in that, the film that is shaped in the described step 10) plated film is an inorganic material film.
18. photo-etching carrying-away moulding method according to claim 17 is characterized in that, described inorganic material is the conductive material that comprises metal and ITO.
19. photo-etching carrying-away moulding method according to claim 17 is characterized in that, described inorganic material is the insulating material that comprises dielectric material.
20. photo-etching carrying-away moulding method according to claim 17 is characterized in that, described inorganic material is the semiconductor material that comprises semiconductive luminescent materials.
21. photo-etching carrying-away moulding method according to claim 1 is characterized in that, thin film-forming method is an electron beam evaporation deposition in the described step 10) plated film.
22. photo-etching carrying-away moulding method according to claim 1 is characterized in that, thin film-forming method is a magnetron sputtering plating in the described step 10) plated film.
23. photo-etching carrying-away moulding method according to claim 1 is characterized in that, the baffle plate figure that described step 4) adopts when exposing the figure of used mask and described step 10) plated film is worked in coordination, and the zone that plated film is limited in need on the substrate is convenient to be lifted away from.
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| CNA2006100298088A CN101122738A (en) | 2006-08-08 | 2006-08-08 | Photo-etching carrying-away moulding method |
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| CNA2006100298088A CN101122738A (en) | 2006-08-08 | 2006-08-08 | Photo-etching carrying-away moulding method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800293A (en) * | 2010-03-15 | 2010-08-11 | 彩虹集团公司 | Manufacturing method of organic light emitting diode, insulation layer and isolation column thereof |
| CN102253601A (en) * | 2011-08-01 | 2011-11-23 | 无锡中微晶园电子有限公司 | Method for improving thermostability of 7350 photoresist |
-
2006
- 2006-08-08 CN CNA2006100298088A patent/CN101122738A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800293A (en) * | 2010-03-15 | 2010-08-11 | 彩虹集团公司 | Manufacturing method of organic light emitting diode, insulation layer and isolation column thereof |
| CN102253601A (en) * | 2011-08-01 | 2011-11-23 | 无锡中微晶园电子有限公司 | Method for improving thermostability of 7350 photoresist |
| CN102253601B (en) * | 2011-08-01 | 2013-04-24 | 无锡中微晶园电子有限公司 | Method for improving thermostability of 7350 photoresist |
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