CN102244176A - Light emergency interface of LED (light emitting diode) chip and preparation method thereof - Google Patents
Light emergency interface of LED (light emitting diode) chip and preparation method thereof Download PDFInfo
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- CN102244176A CN102244176A CN2011101178987A CN201110117898A CN102244176A CN 102244176 A CN102244176 A CN 102244176A CN 2011101178987 A CN2011101178987 A CN 2011101178987A CN 201110117898 A CN201110117898 A CN 201110117898A CN 102244176 A CN102244176 A CN 102244176A
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- led chip
- light
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- optical interface
- out optical
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Abstract
The invention discloses a light emergency interface of an LED (light emitting diode) chip, which comprises a light transmitting matrix arranged on the LED chip and is characterized in that the outer surface of the light transmitting matrix is provided with a light transmitting film with a micro convex lens array structure. The invention also discloses a preparation method of the light emergency interface of the LED chip. In the invention, the matrix made of a high optical refractive index light-transmitting material is constructed on the LED chip and the optical film similar to a micro convex lens array is formed on the outer surface, so that the total reflection loss is furthest reduced and avoided and the emergency efficiency of the LED chip is effectively promoted.
Description
Technical field
The invention belongs to the LED lighting technical field, what be specifically related to a kind of led chip goes out optical interface and preparation method thereof.
Background technology
Current under the background that the worry of global energy shortage raises once again, energy savings is the major issue that our present and even following long time all will face.At lighting field, semiconductor lighting since its energy-saving and environmental protection, characteristic such as high-end receive much concern.The LED fluorescent lamp is owing to luminous efficiency height, energy-conservation, and the good effectiveness of colour developing will extensively be popularized in the world.No matter be the LED of general type, still at the widely used white light LEDs of lighting field, because led chip has the light refractive index up to about 2～4, so that when its to than the outgoing of low optical medium the time, because of there being total reflection phenomenon to occur, and the light greater than certain critical angle incident can't be penetrated, light emission rate is descended.Present led chip manufacturer often more pays close attention to the power that improves LED and has ignored this part light that loses because of total reflection.
Summary of the invention
Goal of the invention: the objective of the invention is at the deficiencies in the prior art, provide a kind of reduce to greatest extent and avoid total reflection loss led chip go out optical interface, thereby improve the led chip light extraction efficiency.
Another object of the present invention is to provide this preparation method who goes out optical interface.
Technical scheme: led chip of the present invention go out optical interface, comprise the printing opacity matrix that is arranged on the led chip, described printing opacity matrix outer surface is provided with the light transmission film of dimpling array structure thereof.
The material of described light transmission film is titanium oxide or titanium oxide and zirconic mixture.
Described printing opacity matrix adopts high light refractive index light transmissive material to make.
The preparation method who goes out optical interface of led chip of the present invention comprises the steps:
(1) structure one deck printing opacity matrix on led chip;
(2) on described printing opacity matrix, prepare the light transmission film that is the dimpling array structure thereof.
The preparation method of step (2) is that the use capillary net plate adopts the method for electron beam evaporation to deposit the light transmission film that is the dimpling array structure thereof on led chip.
Described light transmission film adopts titanium oxide or titanium oxide and zirconic mixture to be prepared from.
Described printing opacity matrix adopts high light refractive index light transmissive material to make.
Beneficial effect: the present invention compared with prior art, its beneficial effect is: 1, the present invention is matrix by structure one deck on led chip with high light refractive index light transmissive material, and form the optical thin film of similar dimpling lens arra on the outer surface, rely on it to reduce to greatest extent and avoid loss at total reflection, effectively promoted the light extraction efficiency of led chip; 2, among the present invention, the high light refractive index of light transmission film material has guaranteed that to have than no membrane structure be the bigger angle of total reflection to chip going out optical interface, thereby obtains more light output; The lenslike glass face formation attitude of film outer surface then can be used the loss that optical interface almost has no any total reflection in theory.
Description of drawings
Fig. 1 is the light path schematic diagram that the common LED chip of light transmission film is not set.
Fig. 2 is provided with the light path schematic diagram of the led chip of light transmission film for the present invention.
Among Fig. 1, the light outgoing situation when 1 expression is in critical angle, 2 expressions are less than critical angle time outgoing situation, and 3 expressions are greater than critical angle time outgoing situation.
Among Fig. 2, the light outgoing situation of 1 expression during greater than no optics film critical angle, 2 represent the special optical films.
Embodiment
Below in conjunction with accompanying drawing, technical solution of the present invention is elaborated, but protection scope of the present invention is not limited to described embodiment.
Embodiment 1
A kind of led chip go out optical interface, comprise the printing opacity matrix that is arranged on the led chip, described printing opacity matrix outer surface is provided with the light transmission film of dimpling array structure thereof.
Concrete preparation method is as follows:
In order to obtain to be not less than 2 high index, can in being suitable for preparation light transmission film material, select titanium oxide (T for use
iO
2) or titanium oxide and zirconia (Z
rO
2) mixed resin.
Because the purpose of preparation optical thin film of the present invention, only be to reduce to greatest extent and avoid contingent total reflection loss on the interface, there is no other any other strict demands, therefore, can rely on special capillary net plate to adopt the method for electron beam evaporation, on led chip, deposit surface and present the special optical film of similar convex lens battle array, and needn't adopt the numerous and diverse micro-optic face embossment direct-write methods of existing technology with suitable thickness.
Principle of the present invention is as follows:
As Fig. 1, because technological reason has a spot of air between semiconductor chip and package casing, therefore the outgoing of light just becomes by optically denser medium and reflects to optically thinner medium, when incidence angle θ (sees the situation of mark 2 among Fig. 1) during less than critical angle, light can outgoing, when incidence angle (is seen mark 1 and mark 3 situations) during more than or equal to critical angle, light is because total reflection and can not outgoing causes light loss.When at chip surface the special optical film being arranged (as Fig. 2), owing to film closely contacts with chip, and the refractive index of film is higher, light is through the refraction again of thin film dielectrics, make critical angle become big, make originally can not outgoing light be able to outgoing, increase light emission rate.
Simplify supposition down, when chip light emitting is deferred to Lambert law, because the cirtical angle of total reflection
Wherein, n
1And n
2Be respectively the incident of light and the light refractive index of emergent medium.
Can there be the light emission rate of chip to be
If the light refractive index of film is n
2', then the chip light-emitting rate can be increased to original k doubly:
（2）
As mentioned above, although represented and explained the present invention that with reference to specific preferred embodiment it shall not be construed as the restriction to the present invention self.Under the spirit and scope of the present invention prerequisite that does not break away from the claims definition, can make various variations in the form and details to it.
Claims (7)
- A led chip go out optical interface, comprise the printing opacity matrix that is arranged on the led chip, it is characterized in that: described printing opacity matrix outer surface is provided with the light transmission film of dimpling array structure thereof.
- Led chip according to claim 1 go out optical interface, it is characterized in that: the material of described light transmission film is titanium oxide or titanium oxide and zirconic mixture.
- Led chip according to claim 1 go out optical interface, it is characterized in that: described printing opacity matrix adopts high light refractive index light transmissive material to make.
- 4. the preparation method who goes out optical interface of led chip according to claim 1 is characterized in that comprising the steps:(1) structure one deck printing opacity matrix on led chip;(2) on described printing opacity matrix, prepare the light transmission film that is the dimpling array structure thereof.
- 5. the preparation method who goes out optical interface of led chip according to claim 4, it is characterized in that: the preparation method of step (2) is, use capillary net plate, adopt the method for electron beam evaporation on led chip, to deposit the light transmission film that is the dimpling array structure thereof.
- 6. the preparation method who goes out optical interface of led chip according to claim 4 is characterized in that: described light transmission film adopts titanium oxide or titanium oxide and zirconic mixture to be prepared from.
- 7. the preparation method who goes out optical interface of led chip according to claim 4, it is characterized in that: described printing opacity matrix adopts high light refractive index light transmissive material to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101178987A CN102244176A (en) | 2011-05-09 | 2011-05-09 | Light emergency interface of LED (light emitting diode) chip and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101178987A CN102244176A (en) | 2011-05-09 | 2011-05-09 | Light emergency interface of LED (light emitting diode) chip and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102244176A true CN102244176A (en) | 2011-11-16 |
Family
ID=44962122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101178987A Pending CN102244176A (en) | 2011-05-09 | 2011-05-09 | Light emergency interface of LED (light emitting diode) chip and preparation method thereof |
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| CN (1) | CN102244176A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001203393A (en) * | 2000-01-19 | 2001-07-27 | Matsushita Electric Works Ltd | Light-emitting diode |
| KR20060130980A (en) * | 2005-06-14 | 2006-12-20 | 삼성전자주식회사 | Image forming apparatus and light emitting apparatus |
| CA2639056A1 (en) * | 2008-09-05 | 2010-03-05 | David Jeannette | Method for manufacturing parabolic cylindrical micro lens arrays |
| CN102044615A (en) * | 2009-10-19 | 2011-05-04 | 采钰科技股份有限公司 | Light-emiting device chip and method for fabricating the same, and light-emitting device package |
| CN202140973U (en) * | 2011-05-09 | 2012-02-08 | 宜兴环特光电科技有限公司 | Light-exiting interface of LED (light-emitting diode) chip |
-
2011
- 2011-05-09 CN CN2011101178987A patent/CN102244176A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001203393A (en) * | 2000-01-19 | 2001-07-27 | Matsushita Electric Works Ltd | Light-emitting diode |
| KR20060130980A (en) * | 2005-06-14 | 2006-12-20 | 삼성전자주식회사 | Image forming apparatus and light emitting apparatus |
| CA2639056A1 (en) * | 2008-09-05 | 2010-03-05 | David Jeannette | Method for manufacturing parabolic cylindrical micro lens arrays |
| CN102044615A (en) * | 2009-10-19 | 2011-05-04 | 采钰科技股份有限公司 | Light-emiting device chip and method for fabricating the same, and light-emitting device package |
| CN202140973U (en) * | 2011-05-09 | 2012-02-08 | 宜兴环特光电科技有限公司 | Light-exiting interface of LED (light-emitting diode) chip |
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Application publication date: 20111116 |