CN102244006B - Thin film transistor and manufacturing method thereof - Google Patents
Thin film transistor and manufacturing method thereof Download PDFInfo
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- CN102244006B CN102244006B CN 201110158824 CN201110158824A CN102244006B CN 102244006 B CN102244006 B CN 102244006B CN 201110158824 CN201110158824 CN 201110158824 CN 201110158824 A CN201110158824 A CN 201110158824A CN 102244006 B CN102244006 B CN 102244006B
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Abstract
The invention provides a thin film transistor and a manufacturing method thereof, wherein, a light resistant layer is patterned in a photomask displacement manner so that the light resistant layer can cover a part of ohm contact layer. Then, after an exposed ohm contact layer is removed, the channel length of the thin film transistor can be shortened to increase firing currents.
Description
Technical field
The invention relates to a kind of thin-film transistor and manufacture method thereof, and a kind of thin-film transistor and manufacture method thereof relevant for being applied to liquid crystal display particularly.
Background technology
Liquid crystal display consists predominantly of the assemblies such as thin-film transistor, colored filter and liquid crystal, and wherein thin-film transistor mainly is comprised of grid, gate dielectric layer, source electrode and drain electrode.When grid is applied in applied voltage, the ohmic contact layer of next-door neighbour's gate dielectric layer can be responded to applied voltage and form channel by source electrode and the conducting each other that drains between source electrode and drain electrode.In general, channel length can affect the size of holding electric current, therefore, if wish improves firing current, needs to reduce channel length.
In the process of manufacturing thin-film transistor, generally need several lithography steps to form said modules.But, because the restriction of exposure machine accuracy, making channel length the shortest can only be 3-4 μ m, and can't shorten again, and then has limited to the size of thin-film transistor firing current.
Summary of the invention
An aspect of the present invention is to carry out the patterning photoresist layer by the light shield displacement mode providing a kind of, makes on its ohmic contact layer that can cover part.Then after removing the ohmic contact layer of exposure, can shorten the channel length of thin-film transistor to improve firing current.
According to one embodiment of the invention, a kind of manufacture method of thin-film transistor is provided, its step comprises as follows.Form thin-film transistor on substrate, and thin-film transistor includes grid, gate dielectric layer, channel layer, ohmic contact layer, source electrode and drain electrode.Then, form photoresist layer on thin-film transistor.Next, toward source electrode or the drain directions translation patterned source light shield used with drain electrode, and translation distance is less than the distance between source electrode and drain electrode.Then, photoresistance is carried out to the exposure imaging processing procedure.Come again, remove the ohmic contact layer that exposes to form opening.Wherein, the distance between source electrode and drain electrode is greater than the width of opening, and A/F can be 2-3 μ m.
According to another embodiment of the present invention, a kind of thin-film transistor structure is provided, comprising: grid, gate dielectric layer, channel layer, the ohmic contact layer with opening, source electrode and drain electrode are sequentially arranged on substrate.Wherein, the distance between source electrode and drain electrode is greater than the width of opening.In addition, also can comprise sheath and pixel electrode.
The foregoing invention content aims to provide the simplification summary of this disclosure, so that the reader possesses basic understanding to this disclosure.This summary of the invention is not the complete overview of this disclosure, and its purpose is not at the key/critical assembly of pointing out the embodiment of the present invention or defines scope of the present invention.After consulting hereinafter execution mode, the persond having ordinary knowledge in the technical field of the present invention is when understanding easily essence spirit of the present invention and other goal of the invention, and the technology used in the present invention means with implement aspect.
The accompanying drawing explanation
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, appended graphic being described as follows:
Figure 1A-Fig. 1 D is the manufacturing process cross-sectional view illustrated according to the thin-film transistor of an embodiment of the present invention.
Fig. 2 is the cross-sectional view illustrated according to the thin-film transistor of another execution mode of the present invention.
Embodiment
According to above-mentioned, carry out the patterning photoresist layer by the light shield displacement mode, make on its ohmic contact layer that can cover part.Then, after removing the ohmic contact layer exposed, can shorten the channel length of thin-film transistor.In narration below, will introduce illustration manufacture method and the illustration structure thereof of above-mentioned thin-film transistor.In order easily to understand the event of described embodiment, below will provide many ins and outs.Certainly, not all embodiment all needs these ins and outs.Simultaneously, the structure that some are widely known by the people or assembly only can be drawn in the mode of signal, with simplicity of illustration content suitably in graphic.
Below in detail the manufacture method of illustrative thin-film transistor will be described in detail.Please refer to Figure 1A-1D figure, it illustrates the manufacturing process cross-sectional view according to a kind of thin-film transistor of an embodiment of the present invention.
As shown in Figure 1A figure, first on substrate 100, sequentially form grid 110, gate dielectric layer 112, channel layer 120 and ohmic contact layer 122.Grid 110 materials can be aluminium, copper or other applicable electric conducting material.The method of formation grid 110 is depositing conducting layer on substrate 100 first, then form with micro image etching procedure.Gate dielectric layer 112 materials can be silica or silicon nitride.Forming the method for channel layer 120 and ohmic contact layer 122 can be on gate dielectric layer 112 sequentially after deposited amorphous silicon layer and doped amorphous silicon layer, then form by micro image etching procedure.
As shown in Figure 1B figure, first on ohmic contact layer 122 and gate dielectric layer 112, form source electrode 130 and drain electrode 132.Source electrode 130 can be aluminium, copper or other applicable electric conducting material with the material of drain electrode 132.Form the method for source electrode 130 and drain electrode 132 can be on ohmic contact layer 122 and gate dielectric layer 112 first depositing conducting layer, then form with micro image etching procedure.Specifically, due to the restriction of micro-photographing process exposure machine accuracy used, make source electrode 130 and the drain electrode distance between 132 between 3-4 μ m.
Then, form the photoresist layer 140 of patterning with cover part ohmic contact layer 122 in ohmic contact layer 122, source electrode 130 and drain electrode 132.The method that forms the photoresist layer 140 of patterning can first form photoresist layer 140, then use patterned source 130 and drain electrode 132 light shield used towards the direction displacement one of drain electrode 132 suitably after distance to carry out the processing procedure of exposure imaging.Therefore, the photoresist layer 140 stayed can cover the ohmic contact layer 122 of part, and still has the ohmic contact layer 122 of part to maintain the state originally exposed.So, can shorten the length of the ohmic contact layer 122 exposed.Specifically, the length that above-mentioned ohmic contact layer 122 is covered by photoresist layer 140 is about 1 μ m left and right.
As shown in Fig. 1 C figure, remove the ohmic contact layer 122 that exposes to form opening 124, but and electrical isolation source electrode 130 and drain electrode 132.The method that removes ohmic contact layer 122 can be dry ecthing method.Specifically, the channel length of opening 124 belows is about 2-3 μ m.
As shown in Fig. 1 D figure, at source electrode 130, drain 132, form sheath 150 on ohmic contact layer 122 and gate dielectric layer 112, and form contact hole 152 in sheath 150, with the upper surface of expose portion drain electrode 132.Then, in contact hole 152 and on sheath 150, form pixel electrode 160, pixel electrode 160 can be electrically connected with drain electrode 132.The material of sheath 150 for example can be silica or silicon nitride.The material of pixel electrode 160 can be transparent conductive material, for example indium tin oxide.
Fig. 2 is the cross-sectional view illustrated according to a kind of thin-film transistor of another execution mode of the present invention.In Fig. 2, can see the position of the opening 124 in ohmic contact layer 122 near source electrode 130 places.Details are as follows for the manufacture method of this structure: at first, form the structure of Figure 1A figure, then form source electrode 130 and drain electrode 132 on ohmic contact layer 122 and gate dielectric layer 112.Then, form the photoresist layer 140 of patterning, the method for formation is to utilize source electrode 130 and drain electrode 132 light shield used after source electrode 130 direction displacement one segment distances, then carries out micro image etching procedure, to manufacture the opening 124 near source electrode 130.Then, at source electrode 130, drain 132, form sheath 150 on ohmic contact layer 122 and gate dielectric layer 112, and form contact hole 152 in sheath 150.Finally, form pixel electrode 160 in contact hole 152.
Below in detail illustrative thin-film transistor structure will be described in detail.As Fig. 1 D figure, with as shown in Fig. 2, it is the cross-sectional view illustrated respectively according to a kind of thin-film transistor of an embodiment of the present invention.This thin-film transistor can sequentially comprise substrate 100, grid 110, gate dielectric layer 112, channel layer 120, ohmic contact layer 122, source electrode 130 and drain electrode 132.In addition, also can include sheath 150 and pixel electrode 160.
Gate dielectric layer 112 is set on grid 110.Gate dielectric layer 112 materials can be silica or silicon nitride.
In addition, can in gate dielectric layer 112, ohmic contact layer 122, source electrode 130 and drain electrode 132, form sheath 150, and there is contact hole 152 in sheath 150.Sheath 150 materials can be silica or silicon nitride.Then, form pixel electrode 160 in contact hole 152 and on sheath 150.
According to above-mentioned, by by the light shield displacement mode, carrying out the patterning photoresist layer, make on its ohmic contact layer that can cover part.And then after removing the ohmic contact layer of exposure, and can shorten the width of opening.A/F is positioned at the channel length of opening below.And above-mentioned light shield is to use the light shield identical with drain electrode with forming source electrode, and does not need additionally to make new light shield again.Therefore, can reach better operation usefulness in the situation that do not increase equipment cost.In addition, when grid is applied in applied voltage, induction applied voltage and form than short channel, can improve the firing current of thin-film transistor.
Although the present invention with execution mode openly as above; so it is not in order to limit the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking aforesaid the claim person of defining.
Claims (3)
1. the manufacture method of a thin-film transistor, is characterized in that, comprises:
Form a thin-film transistor on a substrate, this thin-film transistor comprises a grid, a gate dielectric layer, a channel layer, an ohmic contact layer, one source pole and a drain electrode;
Form a photoresist layer on this thin-film transistor;
Toward this source electrode direction or this this source electrode of drain directions translation patterning and this light shield used that drains, the distance of translation is less than the distance between this source electrode and this drain electrode;
This photoresist layer is carried out to an exposure imaging processing procedure;
Remove this ohmic contact layer of exposing to form an opening, wherein the distance between this source electrode and this drain electrode is greater than the width of this opening; And
Remove this photoresist layer.
2. manufacture method as claimed in claim 1, is characterized in that, this A/F is 2-3 μ m.
3. manufacture method as claimed in claim 1, is characterized in that, also comprises:
Form a sheath in this gate dielectric layer, this ohmic contact layer, this source electrode and this drain electrode;
Form a contact hole in this sheath, with this drain electrode of expose portion; And
Form a pixel electrode in this contact hole and on this sheath.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110158824 CN102244006B (en) | 2011-06-14 | 2011-06-14 | Thin film transistor and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110158824 CN102244006B (en) | 2011-06-14 | 2011-06-14 | Thin film transistor and manufacturing method thereof |
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| CN102244006A CN102244006A (en) | 2011-11-16 |
| CN102244006B true CN102244006B (en) | 2013-12-18 |
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| CN103354244B (en) * | 2013-07-02 | 2015-08-26 | 华映视讯（吴江）有限公司 | Oxide semiconductor thin-film transistor and manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101425481B (en) * | 2007-10-30 | 2010-09-15 | 中华映管股份有限公司 | Pixel construction and manufacturing method thereof |
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| CN101425481B (en) * | 2007-10-30 | 2010-09-15 | 中华映管股份有限公司 | Pixel construction and manufacturing method thereof |
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