CN102243967A - Preparation method for cathode of ballistic field-emitting display device based on porous dielectric material thin film - Google Patents
Preparation method for cathode of ballistic field-emitting display device based on porous dielectric material thin film Download PDFInfo
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- CN102243967A CN102243967A CN2011101368619A CN201110136861A CN102243967A CN 102243967 A CN102243967 A CN 102243967A CN 2011101368619 A CN2011101368619 A CN 2011101368619A CN 201110136861 A CN201110136861 A CN 201110136861A CN 102243967 A CN102243967 A CN 102243967A
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Abstract
The invention relates to a preparation method for a cathode of a ballistic field-emitting display device based on a porous dielectric material thin film. The field-emitting cathode consists of an upper emitting electrode, a middle porous dielectric material thin film and a lower emitting electrode, wherein the porous dielectric material thin film is prepared by chemical synthesis and a physical method. The device in the invention has a simple structure, low driving voltage and electron emitting rate of over 5 percent; meanwhile, during preparation, the preparation method has the advantages that: the preparation process is simple, the material is not needed to be treated specially, the emitting cathode is not needed to be activated specially and electron emission can be performed by directly applying the driving voltage. By adoption of the process, the preparation cost is much lower than that of the prior art; and the preparation method is suitable for large-scale production.
Description
Technical field
The invention belongs to vacuum electronic emission type technical field of flat panel display, particularly a kind of preparation method of the trajectory field emission display negative electrode based on the porous dielectric material film.
Background technology
In fact the ballistic electron emission is meant a kind of accurate ballistic electron emission that utilizes porous silicon to realize, result the earliest is the nineteen ninety-five report.This emission has higher efficient and little fluctuating, is considered to overcome many shortcomings of Spindt type negative electrode.1999, develop in Matsushita Electric Industrial Co based on the device example that is called as ballistic electron surface emitting demonstration (Ballistic electron Surface-emitting Display is called for short BSD) of this negative electrode.
Originally the BSD negative electrode is made on silicon chip, develops on deposited polycrystalline silicon thin film on the substrate of glass afterwards and makes.At first prepare column electrode with method of diffusion being oriented on 100 the n type silicon chip.Then with the thick un-doped polysilicon of liquid phase CVD method deposition 1.5um.Then carry out the processing of 12s anodization porous in 1: 1 HF (50%) and ethanolic solution, current density is 30mA/cm
2, the tungsten lamp with 500W shines on the distance of 20cm simultaneously.After carrying out the 60min oxidation processes under 900 ℃, the golden film that deposits 15nm again is as grid to porous silicon.Grid figure newly forms with the ion grinding technique.In order to reduce resistance, with thicker aluminium film production bus electrode.
The emission threshold threshold voltage of BSD negative electrode approximately is 8V, and when grid voltage reached 30V, emission reached 2mA/cm
2, can satisfy the demand that high brightness shows.If the ratio of emission current and grid current is defined as emissivity, then when grid voltage was between 22～30V, emissivity reached 1%.This negative electrode of real surface can still can operate as normal during up to 10Pa at pressure.
The loose structure that forms in the anodizing process is actually by nano particle and forms, and oxidizing process makes nanocrystal and on every side polycrysalline silcon surface formation layer of silicon dioxide fast.Because heat emission, electronics enters the porous silicon from substrate.Collision probability between electronics and the nanocrystal is little, has caused the mean free path of electronics in nanocrystal to be far longer than free path in the body silicon materials, therefore is considered to accurate ballistic electron.Because the existence of oxide layer is able to apply highfield (10 in porous silicon layer
7V/m).Under this highfield, electronics moves to grid, and obtains the energy of several electrons volt, and is transmitted in the vacuum by the gold layer.
BSD has lot of advantages, and is little as beam divergence angle, and self-focusing function, antipollution and can be than operate as normal under the low vacuum etc. be arranged.
The topmost shortcoming of BSD is that emission effciency is low.
Summary of the invention
The objective of the invention is for overcoming the deficiencies in the prior art part, a kind of device electronics operation zero collision that has is proposed, the electron focusing ability is strong, the emission effciency height, device architecture is simple, driving voltage is low, advantages such as low cost of manufacture, it is simple to possess preparation technology simultaneously, material need not special processing, and emitting cathode does not need special activation to handle yet, and directly applies the advantage that driving voltage just can produce the electronics emission, device cost is significantly less than prior art, is fit to the preparation method based on the trajectory field emission display negative electrode of porous dielectric material film of large-scale production.
For achieving the above object, the technical solution used in the present invention is:
1) at first on the Si substrate, prepares the densely covered silicon nanometer grass array that diameter is 10～200nm by dark dry etching;
2) be that template obtains the dielectric material film that diameter is the densely covered nanohole array of 10～200nm by mould rotating technology with silicon nanometer grass array then;
3) each deposit thickness of positive and negative at the dielectric material film that is densely covered with nanohole array is the metal electrode of tens nanometers and hundreds of nanometer;
4) adopt silk screen print method on the metal electrode of the positive and negative of dielectric material film, to print row-column electrode, and on the crosspoint of row-column electrode, print insulating barrier and isolate with silk screen print method.
The etching gas of the dark dry etching of described step 1) is SF6, and flow is 100sccm, and passivation gas is C4F8, flow is 100sccm, etching power 700W, etch period 21min, nanometer natural plant height degree is 10um, and nanometer grass diameter is 10～200nm, and nanometer grass spacing is 10～200nm.
Described step 2) PDMS and curing agent thereof are made into colloidal solution by 10: 1 mass ratio, and colloidal solution is dropped on the Si substrate of the silicon nanometer grass array that gathers, be placed in the closed container that vacuum degree is 10-1Pa and remove the bubble in the PDMS solution and to make PDMS solution fully fill gap between the silicon nanometer grass, at last its insulation was solidified 24 hours at 100 ℃, make that by control PDMS titer the PDMS thickness behind the levelling is 100nm; PDMS after will solidifying again was immersed in 90 ℃ the KOH solution corrosion 3 hours together with silicon chip, silicon chip and the corrosion of nanometer grass thereof is clean, and the sample after will corroding with deionized water ultrasonic cleaning 10min after nitrogen dry up, obtaining thickness is that 10-200nm, aperture are that 10～200nm, pitch of holes are the PDMS porous membrane of 10～200nm.
Described step 3) adopts magnetron sputtering deposition to prepare the upper strata metal electrode at the positive and negative of the dielectric material film that is densely covered with nanohole array, the lower metal electrode, sputtering power is 500W, argon flow amount is 20sccm, the sputtering time of upper strata metal electrode is 1min, film thickness is 25nm, and the sputtering time of lower metal electrode is 10min, and corresponding film thickness is 25nm and 250nm.
Described metal electrode adopts Pt, Pd, Au, Ag or the Cu that work function is low and physical and chemical performance is stable.
Device architecture of the present invention is simple, and driving voltage is low, and electron emissivity surpasses 5%; Simultaneously, it is simple to possess preparation technology at the manufacturing of this device, and material need not special processing, and emitting cathode does not need special activation to handle, and just can produce the advantage that electronics is launched by directly applying driving voltage; Adopt the manufacturing cost of this technology to be significantly less than prior art, and suitable large-scale production.
Description of drawings
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Fig. 1-Fig. 4 is preparation flow figure of the present invention, and wherein, the figure in every picture group (b) is the A-A cutaway view of figure (a).
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
1), at first on the Si substrate, prepares the densely covered silicon nanometer grass array that diameter is 10～200nm by dark dry etching referring to Fig. 1;
Wherein the etching gas of dark dry etching is SF6, and flow is 100sccm, and passivation gas is C4F8, flow is 100sccm, etching power 700W, etch period 21min, nanometer natural plant height degree is 10um, and nanometer grass diameter is 10～200nm, and nanometer grass spacing is 10～200nm.
2) be that template obtains the dielectric material film that diameter is the densely covered nanohole array of 10～200nm by mould rotating technology with silicon nanometer grass array then;
Its concrete preparation process is as follows:
Referring to Fig. 2, PDMS and curing agent thereof are made into colloidal solution by 10: 1 mass ratio, and colloidal solution is dropped on the Si substrate of the silicon nanometer grass array that gathers, be placed in the closed container that vacuum degree is 10-1Pa and remove the bubble in the PDMS solution and to make PDMS solution fully fill gap between the silicon nanometer grass, at last its insulation was solidified 24 hours at 100 ℃, make that by control PDMS titer the PDMS thickness behind the levelling is 100nm; Referring to Fig. 3, PDMS after will solidifying again was immersed in 90 ℃ the KOH solution corrosion 3 hours together with silicon chip, silicon chip and the corrosion of nanometer grass thereof is clean, and the sample after will corroding with deionized water ultrasonic cleaning 10min after nitrogen dry up, obtaining thickness is that 10-200nm, aperture are that 10～200nm, pitch of holes are the PDMS porous membrane of 10～200nm.
3) positive and negative at the dielectric material film that is densely covered with nanohole array adopts magnetron sputtering deposition to prepare upper strata Pt, Pd, Au, Ag or Cu electrode, the Pt of lower floor, Pd, Au, Ag or Cu electrode, sputtering power is 500W, argon flow amount is 20sccm, the sputtering time of upper strata metal electrode is 1min, film thickness is 25nm, and the sputtering time of lower metal electrode is 10min, and corresponding film thickness is 25nm and 250nm.
4) adopt silk screen print method on the metal electrode of the positive and negative of dielectric material film, to print row-column electrode, and on the crosspoint of row-column electrode, print insulating barrier and isolate with silk screen print method.
Although below in conjunction with the accompanying drawings embodiment of the present invention are described, the present invention is not limited to above-mentioned specific embodiments, and above-mentioned specific embodiments only is schematic, guiding, rather than restrictive.Those of ordinary skill in the art under the situation that does not break away from the scope that claim of the present invention protects, can also make a variety of forms under the enlightenment of this specification, these all belong to the row of the present invention's protection.
Claims (5)
1. based on the preparation method of the trajectory field emission display negative electrode of porous dielectric material film, it is characterized in that:
1) at first on the Si substrate, prepares the densely covered silicon nanometer grass array that diameter is 10～200nm by dark dry etching;
2) be that template obtains the dielectric material film that diameter is the densely covered nanohole array of 10～200nm by mould rotating technology with silicon nanometer grass array then;
3) each deposit thickness of positive and negative at the dielectric material film that is densely covered with nanohole array is the metal electrode of tens nanometers and hundreds of nanometer;
4) adopt silk screen print method on the metal electrode of the positive and negative of dielectric material film, to print row-column electrode, and on the crosspoint of row-column electrode, print insulating barrier and isolate with silk screen print method.
2. the preparation method of the trajectory field emission display negative electrode based on the porous dielectric material film according to claim 1, it is characterized in that: the etching gas of the dark dry etching of described step 1) is SF6, flow is 100sccm, passivation gas is C4F8, and flow is 100sccm, etching power 700W, etch period 21min, nanometer natural plant height degree is 10um, and nanometer grass diameter is 10～200nm, and nanometer grass spacing is 10～200nm.
3. the preparation method of the trajectory field emission display negative electrode based on the porous dielectric material film according to claim 1, it is characterized in that: described step 2) PDMS and curing agent thereof are made into colloidal solution by 10: 1 mass ratio, and colloidal solution is dropped on the Si substrate of the silicon nanometer grass array that gathers, be placed in the closed container that vacuum degree is 10-1Pa and remove the bubble in the PDMS solution and to make PDMS solution fully fill gap between the silicon nanometer grass, at last its insulation was solidified 24 hours at 100 ℃, make that by control PDMS titer the PDMS thickness behind the levelling is 100nm; PDMS after will solidifying again was immersed in 90 ℃ the KOH solution corrosion 3 hours together with silicon chip, silicon chip and the corrosion of nanometer grass thereof is clean, and the sample after will corroding with deionized water ultrasonic cleaning 10min after nitrogen dry up, obtaining thickness is that 10-200nm, aperture are that 10～200nm, pitch of holes are the PDMS porous membrane of 10～200nm.
4. the preparation method of the trajectory field emission display negative electrode based on the porous dielectric material film according to claim 1, it is characterized in that: described step 3) adopts magnetron sputtering deposition to prepare the upper strata metal electrode at the positive and negative of the dielectric material film that is densely covered with nanohole array, the lower metal electrode, sputtering power is 500W, argon flow amount is 20sccm, the sputtering time of upper strata metal electrode is 1min, film thickness is 25nm, the sputtering time of lower metal electrode is 10min, and corresponding film thickness is 25nm and 250nm.
5. according to the preparation method of claim 1 or 4 described trajectory field emission display negative electrodes based on the porous dielectric material film, it is characterized in that: described metal electrode adopts Pt, Pd, Au, Ag or the Cu that work function is low and physical and chemical performance is stable.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151113A (en) * | 2013-01-31 | 2013-06-12 | 中国科学院化学研究所 | Preparation method of pressure-sensitive conductive membrane |
| WO2019218908A1 (en) * | 2018-05-17 | 2019-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nano array-based ballistic transport-type semiconductor component and manufacturing method therefor |
| CN110504327A (en) * | 2018-05-17 | 2019-11-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ballistic transport Schottky diode based on nano-array and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1305636A (en) * | 1998-06-11 | 2001-07-25 | 彼得·维斯科尔 | Planar electron emitter (PEE) |
| JP2004134229A (en) * | 2002-10-10 | 2004-04-30 | Matsushita Electric Ind Co Ltd | Electron emitting element, fluorescent light emitting device using the same, image plotting device using the element, cooling element, and power generating element |
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2011
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1305636A (en) * | 1998-06-11 | 2001-07-25 | 彼得·维斯科尔 | Planar electron emitter (PEE) |
| CN1202545C (en) * | 1998-06-11 | 2005-05-18 | 彼得·维斯科尔 | Planar electron emitter (PEE) |
| JP2004134229A (en) * | 2002-10-10 | 2004-04-30 | Matsushita Electric Ind Co Ltd | Electron emitting element, fluorescent light emitting device using the same, image plotting device using the element, cooling element, and power generating element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151113A (en) * | 2013-01-31 | 2013-06-12 | 中国科学院化学研究所 | Preparation method of pressure-sensitive conductive membrane |
| CN103151113B (en) * | 2013-01-31 | 2015-07-08 | 中国科学院化学研究所 | Preparation method of pressure-sensitive conductive membrane |
| WO2019218908A1 (en) * | 2018-05-17 | 2019-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nano array-based ballistic transport-type semiconductor component and manufacturing method therefor |
| CN110504327A (en) * | 2018-05-17 | 2019-11-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ballistic transport Schottky diode based on nano-array and preparation method thereof |
| CN110504327B (en) * | 2018-05-17 | 2020-12-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ballistic transport Schottky diode based on nano array and manufacturing method thereof |
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