CN102243406A - Self-compensated storage capacitor pixel structure for improving variation of tone curve - Google Patents

Abstract

The invention discloses a self-compensated storage capacitor pixel structure for improving the variation of a tone curve. The pixel structure comprises a scanning line, a storage capacitance line, two signal lines, a pixel and a pixel electrode, wherein the pixel is defined by the cross enclosure of the scanning line, the storage capacitance line and the two signal lines; and the pixel electrode is arranged in the pixel, the pixel electrode and the storage capacitance line are overlapped so as to form a storage capacitor Cs, and the width of the part of the storage capacitance line, from the left side of the pixel to the overlapped area, is greater than the width of the pixel electrode. By the adoption of the pixel structure, the storage capacitor Cs of the pixel can perform self-compensation on the influence of Cgd variation on kickback voltage, so that the characteristics of the pixel can still be kept identical generally when a para-position shift occurs in an array process, and then the variation of the tone curve between panels, caused by the variation of the kickback voltage in the array process, is improved.

Description

Improve the self-compensating storage capacitors dot structure of contrast curve change

Technical field

The present invention relates to the LCD Technology field, particularly improve the self-compensating storage capacitors dot structure of contrast curve change.

Background technology

Image element structure is because of as shown in Figure 1 in the prior art, and sweep trace 1, capacitor storage beam 2, two signal line 3 are intersected to surround and constituted a pixel 4, and each pixel comprises source class 6, grid 8, drain electrode 7 and pixel electrode 5.Wherein, sweep trace 1, grid 8, capacitor storage beam 2 are positioned at the first metal layer, and source class 6, drain electrode 7, two signal line 3, pixel electrode 5 are positioned at second metal level, and source class 6 is electrically connected with signal wire 3, pixel electrode 5 is electrically connected with drain electrode 7, and second metal level is positioned at the first metal layer top.Electric capacity between grid 8 and the drain electrode 7 is called stray capacitance (Cgd).The difference that the contraposition skew will cause each pixel endoparasitism capacitor C gd takes place in the Array processing procedure under this structure: as shown in Figures 2 and 3, the synoptic diagram of contraposition skew for not taking place in Fig. 2, Fig. 3 shows when making second metal level situation that the position with respect to the first metal layer is offset left, then the Cgd of pixel shown in Figure 3 change causes kickback voltage (recalcitrating voltage) bigger greatly, thereby contrast voltage is also bigger, the brightness that causes panel is big (is example with TN mode), so cause the generation that the contrast curve changes between display panels easily.

Summary of the invention

Goal of the invention: at the problem and shortage of above-mentioned existing existence, the purpose of this invention is to provide a kind of self-compensating storage capacitors dot structure that improves the change of contrast curve, the contraposition skew that solves because of the array processing procedure causes the different batches panel to produce the problem of contrast curve change.

Technical scheme: for achieving the above object, the technical solution used in the present invention is a kind of self-compensating storage capacitors dot structure that improves the change of contrast curve, comprising:

The one scan line;

One capacitor storage beam;

Two signal wires;

One pixel, by described one scan line, a described capacitor storage beam and described two signal wires intersect surround defined;

One pixel electrode is arranged in the described pixel, and described pixel electrode and described capacitor storage beam crossover form storage capacitors Cs, and described capacitor storage beam arrives the width of the width of crossover area part greater than described pixel electrode in the left side of described pixel.

Beneficial effect: dot structure of the present invention makes the storage capacitors Cs of pixel can compensate the Cgd variation automatically to recalcitrating the influence of voltage, make when the contraposition skew takes place in the array processing procedure, still can keep pixel characteristic roughly the same, and then improve in the array processing procedure because of recalcitrating the change that change in voltage causes the contrast curve between panel.

Description of drawings

Fig. 1 is traditional dot structure synoptic diagram;

Fig. 2 is a contraposition pixel partial structurtes synoptic diagram just often;

Pixel partial structurtes synoptic diagram when Fig. 3 is offset for contraposition;

Fig. 4 is the dot structure synoptic diagram of the embodiment of the invention.

Embodiment

Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used to the present invention is described and is not used in and limit the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims institute restricted portion to the modification of the various equivalent form of values of the present invention.

As shown in Figure 4, capacitor storage beam 2 in the left side of pixel 4 to the width of the crossover area part of capacitor storage beam 2 and pixel electrode 5 width greater than pixel electrode 5.When if the processing procedure contraposition is offset left, then the crossover area of capacitor storage beam 2 and pixel electrode 5 can become greatly, thereby storage capacitors strengthens.Can reduce the variation in voltage that recalcitrates that generation contraposition skew causes in the processing procedure thus.

Claims (1)

1. one kind is improved the self-compensating storage capacitors dot structure that the contrast curve changes, and comprising:

The one scan line;

One capacitor storage beam;

Two signal wires;

One pixel, by described one scan line, a described capacitor storage beam and described two signal wires intersect surround defined;

One pixel electrode is arranged in the described pixel, and described pixel electrode and described capacitor storage beam crossover form storage capacitors Cs, and described capacitor storage beam arrives the width of the width of crossover area part greater than described pixel electrode in the left side of described pixel.

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