CN102243406B - Self-compensated storage capacitor pixel structure for improving variation of tone curve - Google Patents
Self-compensated storage capacitor pixel structure for improving variation of tone curve Download PDFInfo
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- CN102243406B CN102243406B CN 201110187647 CN201110187647A CN102243406B CN 102243406 B CN102243406 B CN 102243406B CN 201110187647 CN201110187647 CN 201110187647 CN 201110187647 A CN201110187647 A CN 201110187647A CN 102243406 B CN102243406 B CN 102243406B
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- 239000003990 capacitor Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 abstract description 8
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
The invention discloses a self-compensated storage capacitor pixel structure for improving the variation of a tone curve. The pixel structure comprises a scanning line, a storage capacitance line, two signal lines, a pixel and a pixel electrode, wherein the pixel is defined by the cross enclosure of the scanning line, the storage capacitance line and the two signal lines; and the pixel electrode is arranged in the pixel, the pixel electrode and the storage capacitance line are overlapped so as to form a storage capacitor Cs, and the width of the part of the storage capacitance line, from the left side of the pixel to the overlapped area, is greater than the width of the pixel electrode. By the adoption of the pixel structure, the storage capacitor Cs of the pixel can perform self-compensation on the influence of Cgd variation on kickback voltage, so that the characteristics of the pixel can still be kept identical generally when a para-position shift occurs in an array process, and then the variation of the tone curve between panels, caused by the variation of the kickback voltage in the array process, is improved.
Description
Technical field
The present invention relates to the LCD Technology field, particularly improve the self-compensating storage capacitors dot structure of tone curve change.
Background technology
Image element structure is because of as shown in Figure 1 in the prior art, and sweep trace 1, capacitor storage beam 2, two signal line 3 are intersected to surround and consisted of a pixel 4, and each pixel comprises source class 6, grid 8, drain electrode 7 and pixel electrode 5.Wherein, sweep trace 1, grid 8, capacitor storage beam 2 are positioned at the first metal layer, and source class 6, drain electrode 7, two signal line 3, pixel electrode 5 are positioned at the second metal level, and source class 6 is electrically connected with signal wire 3, pixel electrode 5 is electrically connected with drain electrode 7, and the second metal level is positioned at the first metal layer top.Electric capacity between grid 8 and the drain electrode 7 is called stray capacitance (Cgd).The difference that the contraposition skew will cause each pixel endoparasitism capacitor C gd occurs in the Array processing procedure under this structure: as shown in Figures 2 and 3, the schematic diagram of contraposition skew for not occuring in Fig. 2, Fig. 3 shows when making the second metal level the situation that the position with respect to the first metal layer is offset left, then the Cgd of pixel shown in Figure 3 change causes greatly kickback voltage (recalcitrating voltage) larger, thereby contrast voltage is also larger, the brightness that causes panel is large (take TN mode as example), therefore easily cause the generation of tone curve change between display panels.
Summary of the invention
Goal of the invention: for the problem and shortage of above-mentioned existing existence, the purpose of this invention is to provide a kind of self-compensating storage capacitors dot structure that improves the tone curve change, the contraposition skew that solves because of the array processing procedure causes the different batches panel to produce the problem of tone curve change.
Technical scheme: for achieving the above object, the technical solution used in the present invention is a kind of self-compensating storage capacitors dot structure that improves the tone curve change, comprising:
The one scan line;
One capacitor storage beam;
Two signal wires;
One pixel, by described one scan line, a described capacitor storage beam and described two signal wires intersect surround defined;
One pixel electrode is arranged in the described pixel, and described pixel electrode and described capacitor storage beam crossover form storage capacitors Cs, and described capacitor storage beam arrives the width of crossover area part greater than the width of described pixel electrode in the left side of described pixel.
Beneficial effect: but dot structure of the present invention so that the storage capacitors Cs auto-compensation Cgd of pixel change recalcitrating the impact of voltage, so that when the contraposition skew occurs in the array processing procedure, still can keep pixel characteristic roughly the same, and then improve the change that causes the tone curve between panel in the array processing procedure because recalcitrating change in voltage.
Description of drawings
Fig. 1 is traditional dot structure schematic diagram;
Fig. 2 is the pixel partial structurtes schematic diagram of contraposition when normal;
Pixel partial structurtes schematic diagram when Fig. 3 is the contraposition skew;
Fig. 4 is the dot structure schematic diagram of the embodiment of the invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
As shown in Figure 4, capacitor storage beam 2 in the left side of pixel 4 to the width of the crossover area part of capacitor storage beam 2 and pixel electrode 5 width greater than pixel electrode 5.When if the processing procedure contraposition is offset left, then the crossover area of capacitor storage beam 2 and pixel electrode 5 can become greatly, thereby storage capacitors strengthens.Can reduce thus the variation in voltage that recalcitrates that generation contraposition skew causes in the processing procedure.
Claims (1)
1. one kind is improved the self-compensating storage capacitors dot structure that tone curve changes, and comprising:
The one scan line;
One capacitor storage beam;
Two signal wires;
One pixel, by described one scan line, a described capacitor storage beam and described two signal wires intersect surround defined;
One pixel electrode, be arranged in the described pixel, described pixel electrode and described capacitor storage beam crossover form storage capacitors Cs, described capacitor storage beam arrives the width of crossover area part greater than the width of described pixel electrode in the left side of described pixel, and described capacitor storage beam arrives the width of crossover area domain part less than the width of described pixel electrode on the right side of described pixel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110187647 CN102243406B (en) | 2011-07-06 | 2011-07-06 | Self-compensated storage capacitor pixel structure for improving variation of tone curve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110187647 CN102243406B (en) | 2011-07-06 | 2011-07-06 | Self-compensated storage capacitor pixel structure for improving variation of tone curve |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102243406A CN102243406A (en) | 2011-11-16 |
| CN102243406B true CN102243406B (en) | 2013-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201110187647 Expired - Fee Related CN102243406B (en) | 2011-07-06 | 2011-07-06 | Self-compensated storage capacitor pixel structure for improving variation of tone curve |
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Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325984C (en) * | 2001-09-26 | 2007-07-11 | 三星电子株式会社 | Thin film transistor array substrate of liquid crystal display device and producing method thereof |
| CN101004527A (en) * | 2007-01-16 | 2007-07-25 | 友达光电股份有限公司 | Liquid crystal display faceplate, and base plate of array in active mode |
| CN101256327A (en) * | 2008-03-14 | 2008-09-03 | 上海广电光电子有限公司 | Lcd |
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| CN102243406A (en) | 2011-11-16 |
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