CN102237630A - Laser resonant cavity, solid laser and manufacturing method of laser resonant cavity - Google Patents
Laser resonant cavity, solid laser and manufacturing method of laser resonant cavity Download PDFInfo
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- CN102237630A CN102237630A CN2010102597254A CN201010259725A CN102237630A CN 102237630 A CN102237630 A CN 102237630A CN 2010102597254 A CN2010102597254 A CN 2010102597254A CN 201010259725 A CN201010259725 A CN 201010259725A CN 102237630 A CN102237630 A CN 102237630A
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Abstract
The invention discloses a laser resonant cavity, which comprises an input part, an output part and a connecting body, wherein an incidence plane of the input part and an emergency plane of the output part are parallel to each other and form a resonant cavity for laser oscillation; film layers of corresponding wavebands are coated on light transmission surfaces of the input part and the output part respectively; and the connecting body fixedly connects the input part with the output part by using an optical adhesive. A cavity mirror of the laser resonant cavity is high in parallelism, stable in structure and convenient for mass production, and can reduce production cost. Meanwhile, the invention also discloses a solid laser adopting the laser resonant cavity. Furthermore, the invention also discloses a manufacturing method of the laser resonant cavity.
Description
Technical field
The invention belongs to laser technology field, relate in particular to a kind of laserresonator and adopt the solid state laser of described laserresonator; In addition, the invention still further relates to a kind of manufacture method of laserresonator.
Background technology
Solid state laser mainly comprises pumping source, resonant cavity and operation material three parts, thereby resonant cavity be meant light wave therein back reflective form the cavity of laser gain, operation material is meant that the energy that the external world can be provided launches the material of laser by the vibration of resonant cavity.
The resonant cavity of existing solid state laser is made up of total reflective mirror and partially reflecting mirror, and the laser crystal that sends laser that can vibrate all separates placement with partially reflecting mirror and total reflective mirror, and this solid state laser need be adjusted resonant cavity when work.
Because it is very high that the depth of parallelism of two chamber mirrors of resonant cavity requires, usually in level second, if adjust the improper operating characteristic that will have a strong impact on laser, therefore need operating personnel to have extremely strong professional knowledge, the adjustment of the resonant cavity depth of parallelism takes time and effort, even professional operating personnel's production efficiency is also lower.
In addition, because element is released state in the chamber of laserresonator, and the depth of parallelism that is in two chamber mirrors of released state changes in the laser application process easily, causes the mechanical antivibration ability of system relatively poor.
This shows that the laserresonator that adopts unpack format to constitute not only causes certain restriction to the mass production of solid state laser, also affect the optics and the mechanical stability of the solid state laser that final production comes out simultaneously.
Summary of the invention
Because the deficiencies in the prior art the invention provides a kind of laserresonator that can produce in enormous quantities, described laserresonator has depth of parallelism height, constitutionally stable characteristics; Simultaneously, the present invention also discloses a kind of solid state laser that adopts described laserresonator; In addition, the present invention also provides the manufacture method of the integrated laser resonant cavity of a kind of depth of parallelism height and suitable large-scale production.
In order to realize first purpose of the present invention, the invention provides a kind of laserresonator that can produce in enormous quantities, its concrete technical scheme is as following description:
A kind of laserresonator, comprise input block, output block and connector, the plane of incidence of described input block and the exit facet of output block is parallel to each other and constitute the resonant cavity make laser generation, the logical light face of described input block and output block is coated with the rete of corresponding wave band respectively, and described connector is connected and fixed input block and output block by optical cement.
Further, preferred construction is that the depth of parallelism of the plane of incidence of described input block and the exit facet of described output block was smaller or equal to 15 seconds.
Further, preferred construction is, described input block is a laser crystal, and described output block is outgoing mirror or nonlinear crystal.
Further, preferred construction is that described input block is a laser crystal, described output block is an outgoing mirror, also be provided with nonlinear crystal between described laser crystal and outgoing mirror, described nonlinear crystal is fixed on the described connector, and the chamber face of its logical light face resonant cavity is parallel.
Further, preferred construction is that described input block, output block and connector use same matrix or the close material of the coefficient of expansion.
Further, preferred construction is that described laser crystal is selected from Nd:YVO
4Or Nd:YAG or Nd:YLF or Nd:GdVO
4
Further, preferred construction is that described connector is selected from YVO
4Or YAG or YLF or GdVO
4Or silicon chip or potsherd or glass.
Further, preferred construction is that described nonlinear crystal is selected from PPKTP or PPLN or PPLT or LBO or BBO or BiBO or LN or KNO
3Or KTA or CBO or CLBO or PPMgOLN or KN or LiI.
In order to realize second purpose of the present invention, the invention provides a kind of laserresonator that can produce in enormous quantities, its concrete technical scheme is as following description:
A kind of solid state laser comprises the pumping source that can export pump light, wherein, also comprises laserresonator, and the pump light of described pumping source output is directly incident on the plane of incidence of described resonant cavity.
Further, preferred construction is, also be provided with the optical coupling element that described pump light is coupled, pumping source, optical coupling element, laserresonator are arranged in order point-blank, incide the plane of incidence of described resonant cavity after the shaping of the pump light process optical coupling element of described pumping source output and the focusing.
Further, preferred construction is, described pumping source is a semiconductor laser, and described optical coupling element is a coupling mirror.
Further, preferred construction is, described pumping source is a plurality of semiconductor lasers that matrix pattern is arranged, and described optical coupling element is a plurality of GRIN Lens corresponding with the semiconductor laser output light path.
In order to realize the 3rd purpose of the present invention, the invention provides a kind of laserresonator that can produce in enormous quantities, its concrete technical scheme is as following description:
A kind of manufacture method of laserresonator comprises:
(a) select input block material, output block material and the metallic interconnect materials of large-sized coupling for use;
(b) by described metallic interconnect materials described input block material and output block material are connected and fixed, obtain the resonant cavity embryo;
(c) described resonant cavity embryo is cut.
Further, preferable methods is that in the step (c), the short transverse required size that described resonant cavity embryo is cut according to input block or output block material carries out along the plane vertical with described short transverse.
Further, preferable methods is that described metallic interconnect materials is connected and fixed described input block material and output block material by optical cement.
Further, preferable methods is, in step (a) with (b) the logical light face of input block and output block is carried out the plated film of corresponding wave band.
Further, preferable methods is that the depth of parallelism of the exit facet of the plane of incidence of adjustment input block and output block makes it smaller or equal to 15 seconds in step (b).
Further, preferable methods is, when when step (b) is not carried out the plated film of corresponding wave band to the logical light face of input block and output block before, the exit facet depth of parallelism of the plane of incidence of adjusting input block and output block was carried out the plated film of corresponding wave band then smaller or equal to 15 seconds after being connected and fixed in step (b) to it.
Further, preferable methods is, described input block is a laser crystal, and described output block is outgoing mirror or nonlinear crystal.
Adopted after the manufacture method of laserresonator disclosed in this invention, the chamber mirror-parallelism height of the incorporate laserresonator of producing, Stability Analysis of Structures, only need be equipped with semiconductor pumping sources and refrigerating system during application and can obtain laser output, therefore operating personnel do not need extremely strong professional knowledge can use resonant cavity to carry out the assembling of solid state laser, operation sequence simple and fast, and the solid state laser structure and the stable performance of assembling.The manufacture method of laserresonator of the present invention is expected to obtain to use widely in the large-scale production of solid state laser.
Description of drawings
By the description of its exemplary embodiment being carried out below in conjunction with accompanying drawing, above-mentioned feature and advantage of the present invention will become apparent and understand easily.
Fig. 1 is the structural representation of a specific embodiment of laserresonator involved in the present invention;
Fig. 2 is the structural representation of a specific embodiment of laserresonator involved in the present invention;
Fig. 3 is the structural representation of a specific embodiment of laserresonator involved in the present invention;
Fig. 4 is the structural representation of a specific embodiment of laserresonator involved in the present invention;
Fig. 5 be the related laserresonator of Fig. 4 in along the cutaway view of A-A direction;
Fig. 6 is the structural representation of a specific embodiment of solid state laser involved in the present invention;
Fig. 7 is the structural representation of a specific embodiment of solid state laser involved in the present invention;
Fig. 8 be the related solid state laser of Fig. 7 in along A-A direction cutaway view;
Fig. 9 is the flow chart of specific embodiment of the manufacture method of laserresonator involved in the present invention.
Embodiment
Describe the present invention in detail according to the drawings and specific embodiments below.
At first, in conjunction with the accompanying drawings laserresonator involved in the present invention is described in detail.
Embodiment 1:
Fig. 1 is the structural representation of a specific embodiment of laserresonator involved in the present invention, and wherein, described input block adopts laser crystal, and described output block adopts outgoing mirror.Specifically, described laserresonator comprises laser crystal 101, outgoing mirror 102, connector 103.In this embodiment, described outgoing mirror 102 is average mirror.Wherein, laser crystal 101, outgoing mirror 102 and connector 103 adopt the close material of thermal coefficient of expansion, can reduce the influence of thermal effect to resonant cavity overall structure stability.
Wherein the exit facet (S2 face) of the center of laser crystal 101 planes of incidence (S1 face) and outgoing mirror 102 is centered close to same axis, the logical light face of laser crystal 101 and the logical light face of outgoing mirror 102 plate the rete (rete does not draw in the drawings) of fundamental frequency photophase, the depth of parallelism of the S2 face of 1 of S of laser crystal 101 and outgoing mirror 102 was smaller or equal to 15 seconds, and the two constitutes laserresonator jointly.
Adopted the laserresonator in the present embodiment, laser assembling speed is fast, simple, operating personnel's professional skill is required lower, and resonant cavity depth of parallelism height can improve the speed of production of solid state laser greatly, is convenient to mass production; Because connector 103 is sticked together with laser crystal 101 and outgoing mirror 102, has improved the mechanical structure stability of system; Can fast the heat in the laser crystal 101 be shed simultaneously, reduce system's thermal effect, improve laser output photostability.
This laserresonator is expected to obtain to use widely in the large-scale production of solid state laser.
In the present embodiment, laser crystal 101 adopts Nd:YVO
4Crystal, the laser that also can produce as required adopts Nd:YAG, Nd:YLF or Nd:GdVO
4In a kind of, outgoing mirror 102 and connector 103 adopts YVO
4, also can adopt YAG, YLF, GdVO
4A kind of in crystal, silicon chip, potsherd or the glass etc., in a word, the thermal coefficient of expansion of the thermal coefficient of expansion of connector 103 and laser crystal 101 is close more good more, and the three is better certainly with host material.
In addition, the chamber type of described laserresonator can also be flat-cavity, flat-protruding chamber, concave-concave chamber or biconvex chamber etc. except that Ping-Ping chamber; Connector 103 in the laserresonator also can be bonded in the adjacent both sides of the non-logical light face of laser crystal, certainly, if processing technology can guarantee fastness, cleaning maintenance for handled easily in the optics cold working process and in the future using, also can only be bonded in a side of non-logical light face with a connector, this kind situation repeats no more.
Embodiment 2:
Fig. 2 is the structural representation of a specific embodiment of laserresonator involved in the present invention, and wherein, described output block adopts the frequency-doubling crystal through coating film treatment.
Comprising laser crystal 201, frequency-doubling crystal 202, connector 203.In the present embodiment, the logical light face of laser crystal 201 and the logical light face of frequency-doubling crystal 202 are coated with about fundamental frequency light and the corresponding rete of frequency doubled light, and the plane of incidence of laser crystal 201 and the exit facet of frequency-doubling crystal constitute laserresonator, and this laserresonator is Ping-Ping chamber.
When described laserresonator carries out work, at the plane of incidence end configuring semiconductor pumping source end pumping of laser crystal 201 in laser crystal 201, in laserresonator, at first produce fundamental frequency light, become frequency doubled light, through the emission of frequency-doubling crystal 202 exit facets through behind the frequency-doubling crystal 202.Do not use outgoing mirror in the present embodiment, but plate the high-reflecting film of fundamental frequency light and the high transmittance film of frequency doubled light at the exit facet of frequency-doubling crystal 202, make the plane of incidence and exit facet constitute laser resonant cavity, this structure has been saved outgoing mirror makes structure simpler, and can directly obtain visible light.
Embodiment 3:
Fig. 3 is the structural representation of a specific embodiment of laserresonator involved in the present invention, and in the present embodiment, laserresonator adopts outgoing mirror and laser crystal to constitute resonant cavity.Specifically, described laserresonator comprises laser crystal 301, frequency-doubling crystal 302, connector 303 and outgoing mirror 304.Wherein outgoing mirror 304 is flat-concave mirror, and on the connector 303 that promptly is bonded in both sides in the resonant cavity manufacture process of the frequency-doubling crystal 302 in the described resonant cavity, and the chamber face of its logical light face resonant cavity is parallel, is not described in detail herein.Frequency-doubling crystal described in the present embodiment adopts PPKTP.
In embodiment 2 and 3, frequency-doubling crystal is a kind of of nonlinear crystal, its effect is that the fundamental frequency light that laser crystal produces is carried out the frequency doubled light that frequency multiplication obtains wanting, those of ordinary skills will be understood that, according to actual needs, frequency-doubling crystal also can change other nonlinear crystals into, as with frequency crystal, difference frequency crystal, parametric oscillation crystal (OPO), parameter amplify crystal (OPA) or periodical poled crystal etc.Be specially and adopt PPLN, PPLT, LBO, BBO, BiBO, LN, KNO
3, a kind of among KTA, CBO, CLBO, PPMgOLN, KN or the LiI.
Embodiment 4:
Fig. 4 is the structural representation of a specific embodiment of laserresonator involved in the present invention, Fig. 5 be the related laserresonator of Fig. 4 in along the cutaway view of A-A direction, specifically, comprising laser crystal 401, outgoing mirror 402, connector 403.Outgoing mirror 402 is flat-concave mirror, and resonant cavity is flat-cavity.Unique difference of the specific embodiment that the disclosed laserresonator of present embodiment and Fig. 1 are represented is that the type of outgoing mirror is different.
Those of ordinary skills will be understood that, outgoing mirror among the embodiment 3 and 4 is flat-concave mirror, its part as resonant cavity makes laser produce vibration, therefore its concave surface is the exit facet of resonant cavity, be coated with the film of relevant work wavelength, generally speaking, its concave surface is placed towards intra resonant cavity, and some occasion concave surface also can be towards the outside placement of resonant cavity.
In addition, for laserresonator of the present invention, can input block be the optics plain film also, output block is laser crystal or nonlinear crystal or optics plain film.
Below, solid state laser involved in the present invention is described in detail.
Embodiment 5:
Fig. 6 is the structural representation of a specific embodiment of solid state laser involved in the present invention, and specifically, it comprises semiconductor pumping sources 601, coupling mirror 602, laserresonator 603 and frequency-doubling crystal 604.Semiconductor pumping sources 601 adopts semiconductor laser; Laserresonator 603 comprises Nd:YVO
4Laser crystal 6031, outgoing mirror YVO
4Crystal 6 032 and connector YVO
4Crystal 6 033; Frequency-doubling crystal 604 is the PPKTP crystal.
Frequency-doubling crystal 604 is positioned in the chamber of resonant cavity 603, and its Z separates with resonant cavity 603 two axial sides, and frequency-doubling crystal 604 resonant cavity 603 utilize methods such as glue or welding to be fixed on jointly on heat sink (not drawing) herein.
Nd:YVO
4The plane of incidence of laser crystal 6031 and outgoing mirror YVO
4Crystal 6 032 exit facet constitutes laserresonator 603, and the resonant cavity 603 chamber face depth of parallelisms were smaller or equal to 15 seconds, and each the chamber face of resonant cavity 603 and the logical light face of frequency-doubling crystal 304 all are coated with the rete that the relevant work wavelength needs, and this laserresonator is Ping-Ping chamber.
Embodiment 6:
Fig. 7 is the structural representation of another specific embodiment of solid state laser involved in the present invention, Fig. 8 be the related solid state laser of Fig. 7 in along A-A direction cutaway view.As shown in the figure, disclosed solid state laser is the array solid state laser.Comprising pumping source 701, optical coupling system 702, flat-recessed laserresonator 703 and frequency-doubling crystal 704.Specifically be described, described putting down-recessed laserresonator 703 is made of Nd:YAG laser crystal 7031, YAG crystal outgoing mirror 7032 and YAG crystal connector 7033; Frequency-doubling crystal 704 adopts ktp crystal; Pumping source 701 adopts 12 semiconductor lasers to form, and is arranged in the YOZ face according to the matrix pattern of 4X3.In addition, described optical coupling system 702 comprises 12 GRIN Lens, and 12 GRIN Lens are positioned over respectively on the output light path of 12 semiconductor lasers and are corresponding one by one with 12 bundle semiconductor lasers.The plane of incidence of Nd:YAG crystal and the exit facet of outgoing mirror constitute 12 groups of laserresonators, and every group of resonant cavity is flat-cavity.
Specifically be described, each chamber face of described resonant cavity and the logical light face of frequency-doubling crystal 704 plate the corresponding rete of fundamental frequency light and frequency doubled light, the parallel laser of 12 bundles that semiconductor laser produces, focus on the rear end face pumping in Nd:YAG crystal 7031 through 12 GRIN Lens respectively, form the array multi-point pump, at first produce fundamental frequency light in the laserresonator 703, be converted into the exit facet output 12 bundle frequency doubled lights of frequency doubled light behind the fundamental frequency light process KTP frequency-doubling crystal 7032 through outgoing mirror 7033.
Described array solid state laser adopts multi-point pump, realizes that better heating power disperses, and has reduced crystal heat load density, the surface area of laser crystal and volume are big more, radiating effect is good more, can adopt large-size crystals when therefore making laserresonator in the early stage, no longer cuts.
Describe the manufacture method of integrated laser resonant cavity of the present invention below in detail.
At this, mainly the structure with the related laserresonator of the described embodiment of Fig. 1 is an example, and at this, described embodiment only is exemplary, and the difference of the material of element, size resonant cavity chamber type does not influence the essence of its manufacture method.Fig. 9 is the flow chart of specific embodiment of the manufacture method of laserresonator involved in the present invention.
The manufacture method of laserresonator involved in the present invention can be carried out according to the following steps:
Step (a) 901: at first select for use large-sized coupling laser crystal material, outgoing mirror material and metallic interconnect materials (described " large scale " be meant each material of selecting for use in the size of Y direction than each constituent material of single laserresonator of making big at least one times of the size of Y direction).
In general, in the present embodiment, described large-sized laser crystal 101 adopts Nd:YVO
4Crystal also can adopt Nd:YAG, Nd:YLF or Nd:GdVO as required
4In a kind of, outgoing mirror 102 and connector 103 adopts YVO
4, also can adopt YAG, YLF, GdVO as required
4A kind of in crystal, silicon chip, potsherd or the glass, in a word, the thermal coefficient of expansion of its thermal coefficient of expansion and laser crystal is close more good more, and the three is better certainly with host material.
In addition, in the described in the embodiment shown in Figure 2 laserresonator, described frequency-doubling crystal adopts PPKTP, also can adopt PPLN, PPLT, LBO, BBO, BiBO, LN, KNO as required
3, a kind of among KTA, CBO, CLBO, PPMgOLN, KN or the LiI.
Step (b) 902: select whether earlier laser crystal and outgoing mirror to be carried out plated film;
Step 903: if select "Yes", then with the plane of incidence and exit facet, the plane of incidence of outgoing mirror 402 and the plated film that exit facet carries out corresponding wave band of laser crystal 401, (plated film does not draw); Utilize ultraviolet glue that connector 403 is bonded on laser crystal 401 and outgoing mirror 402 sides then, this moment, ultraviolet glue was not solidified, and each crystal still can carry out locational adjusting repeatedly; Utilize the exit facet of the plane of incidence of depth of parallelism detector detection laser crystal 4 01 and outgoing mirror 402 whether parallel, when exit facet 402 depth of parallelisms of the plane of incidence of laser crystal 401 and outgoing mirror during smaller or equal to 15 seconds, make ultraviolet glue solidify with UV-irradiation immediately, obtain high depth of parallelism resonant cavity embryo as shown in Figure 4.
Step 904:, then utilize ultraviolet glue to be bonded on the connector 403 uncoated laser crystal 401 and outgoing mirror 402 if select "No"; Utilize depth of parallelism detector to detect simultaneously, the plane of incidence of adjusting laser crystal 401 and the exit facet depth of parallelism of outgoing mirror 402 were smaller or equal to 15 seconds; Utilize coating machine that the logical light face of laser crystal 401 logical light faces and outgoing mirror 402 is coated with corresponding rete then, obtain high depth of parallelism resonant cavity embryo as shown in Figure 4.
Step (c) 905: after obtaining the resonant cavity embryo, short transverse (Y direction) required size according to laser crystal 401 utilizes cutting technique to cut along the XOZ face, obtain integrated the putting down-recessed laserresonator of organizing more, when outgoing mirror for flat-recessed or flat-during shape such as protruding, will note when cutting to destroy its concave surface or convex configuration, cut at its adjoiner.
The purpose that adopts cutting is to improve the production efficiency of laserresonator, and the method relatively is fit to grow easily large-sized Nd:YVO
4Crystal etc. can obtain many group laserresonators by cutting, improve resonant cavity production efficiency, certainly, also can not adopt cutting method, directly choose the suitable crystal of size and make laserresonator, do not repeat them here.
It should be noted that; though specifically described principle of the present invention and embodiment at described laserresonator above; but; under above-mentioned instruction of the present invention; those skilled in the art can carry out various improvement and distortion on the basis of the foregoing description, and these improvement or distortion drop in protection scope of the present invention.It will be understood by those skilled in the art that top specific descriptions just in order to explain purpose of the present invention, are not to be used to limit the present invention.Protection scope of the present invention is limited by claim and equivalent thereof.
Claims (19)
1. laserresonator, comprise input block, output block and connector, the plane of incidence of described input block and the exit facet of output block is parallel to each other and constitute the resonant cavity make laser generation, the logical light face of described input block and output block is coated with the rete of corresponding wave band respectively, and described connector is connected and fixed input block and output block by optical cement.
2. laserresonator according to claim 1 is characterized in that, the depth of parallelism of the plane of incidence of described input block and the exit facet of described output block was smaller or equal to 15 seconds.
3. laserresonator according to claim 1 and 2 is characterized in that, described input block is a laser crystal, and described output block is outgoing mirror or nonlinear crystal.
4. laserresonator according to claim 3, it is characterized in that, described input block is a laser crystal, described output block is an outgoing mirror, between described laser crystal and outgoing mirror, also be provided with nonlinear crystal, described nonlinear crystal is fixed on the described connector, and the chamber face of its logical light face resonant cavity is parallel.
5. laserresonator according to claim 1 is characterized in that, described input block, output block and connector use same matrix or the close material of the coefficient of expansion.
6. laserresonator according to claim 4 is characterized in that described laser crystal is selected from Nd:YVO
4Or Nd:YAG or Nd:YLF or Nd:GdVO
4
7. laserresonator according to claim 4 is characterized in that described connector is selected from YVO
4Or YAG or YLF or GdVO
4Or silicon chip or potsherd or glass.
8. laserresonator according to claim 4 is characterized in that, described nonlinear crystal is selected from PPKTP or PPLN or PPLT or LBO or BBO or BiBO or LN or KNO
3Or KTA or CBO or CLBO or PPMgOLN or KN or LiI.
9. a solid state laser comprises the pumping source that can export pump light, it is characterized in that, also comprises the arbitrary described laserresonator of claim 1～8, and the pump light of described pumping source output is directly incident on the plane of incidence of described resonant cavity.
10. solid state laser according to claim 9, it is characterized in that, also be provided with the optical coupling element that described pump light is coupled, pumping source, optical coupling element, laserresonator are arranged in order point-blank, incide the plane of incidence of described resonant cavity after the shaping of the pump light process optical coupling element of described pumping source output and the focusing.
11. solid state laser according to claim 10 is characterized in that, described pumping source is a semiconductor laser, and described optical coupling element is a coupling mirror.
12. solid state laser according to claim 10 is characterized in that, described pumping source is a plurality of semiconductor lasers that matrix pattern is arranged, and described optical coupling element is a plurality of GRIN Lens corresponding with the semiconductor laser output light path.
13. the manufacture method of a laserresonator comprises:
(a) select input block material, output block material and the metallic interconnect materials of large-sized coupling for use;
(b) by described metallic interconnect materials described input block material and output block material are connected and fixed, obtain the resonant cavity embryo;
(c) described resonant cavity embryo is cut.
14. the manufacture method of laserresonator according to claim 13, it is characterized in that, in the step (c), the short transverse required size that described resonant cavity embryo is cut according to input block or output block material carries out along the plane vertical with described short transverse.
15. the manufacture method of laserresonator according to claim 13 is characterized in that, described metallic interconnect materials is connected and fixed described input block material and output block material by optical cement.
16. the manufacture method of laserresonator according to claim 13 is characterized in that, in step (a) with (b) the logical light face of input block and output block is carried out the plated film of corresponding wave band.
17. the manufacture method according to claim 13 or 16 described laserresonators is characterized in that, the depth of parallelism of the exit facet of the plane of incidence of adjustment input block and output block makes it smaller or equal to 15 seconds in step (b).
18. the manufacture method of laserresonator according to claim 13, it is characterized in that, when when step (b) is not carried out the plated film of corresponding wave band to the logical light face of input block and output block before, the exit facet depth of parallelism of the plane of incidence of adjusting input block and output block was carried out the plated film of corresponding wave band then smaller or equal to 15 seconds after being connected and fixed in step (b) to it.
19. the manufacture method of laserresonator according to claim 13 is characterized in that, described input block is a laser crystal, and described output block is outgoing mirror or nonlinear crystal.
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| CN2010102597254A CN102237630A (en) | 2010-04-28 | 2010-08-23 | Laser resonant cavity, solid laser and manufacturing method of laser resonant cavity |
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| CN201010158190.1 | 2010-04-28 | ||
| CN2010102597254A CN102237630A (en) | 2010-04-28 | 2010-08-23 | Laser resonant cavity, solid laser and manufacturing method of laser resonant cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103311787A (en) * | 2013-05-31 | 2013-09-18 | 福建华科光电有限公司 | Intracavity frequency doubling microchip laser and preparation method thereof |
| CN104184024A (en) * | 2013-05-23 | 2014-12-03 | 深南电路有限公司 | Method of processing laser and laser |
| CN109314364A (en) * | 2016-08-23 | 2019-02-05 | 株式会社V技术 | Laser pump cavity device |
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| CN2791973Y (en) * | 2005-04-08 | 2006-06-28 | 福州高意通讯有限公司 | Chip laser |
| CN201051612Y (en) * | 2007-07-16 | 2008-04-23 | 福州高意通讯有限公司 | A micro-slice laser cavity |
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| CN2458795Y (en) * | 2000-11-01 | 2001-11-07 | 广州市华光电子系统工程公司 | Laser resonator |
| CN2791973Y (en) * | 2005-04-08 | 2006-06-28 | 福州高意通讯有限公司 | Chip laser |
| CN201051612Y (en) * | 2007-07-16 | 2008-04-23 | 福州高意通讯有限公司 | A micro-slice laser cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104184024A (en) * | 2013-05-23 | 2014-12-03 | 深南电路有限公司 | Method of processing laser and laser |
| CN104184024B (en) * | 2013-05-23 | 2017-10-10 | 深南电路有限公司 | Process the method and laser of laser |
| CN103311787A (en) * | 2013-05-31 | 2013-09-18 | 福建华科光电有限公司 | Intracavity frequency doubling microchip laser and preparation method thereof |
| CN109314364A (en) * | 2016-08-23 | 2019-02-05 | 株式会社V技术 | Laser pump cavity device |
| CN109314364B (en) * | 2016-08-23 | 2021-06-18 | 株式会社V技术 | Laser pump cavity device |
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Application publication date: 20111109 |