CN102237397B - Electrode structure and manufacturing method thereof as well as array substrate and manufacturing method thereof - Google Patents
Electrode structure and manufacturing method thereof as well as array substrate and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 128
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 97
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 97
- 230000008569 process Effects 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
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- 238000005530 etching Methods 0.000 claims abstract description 25
- 239000004411 aluminium Substances 0.000 claims description 86
- 238000002360 preparation method Methods 0.000 claims description 50
- 238000000151 deposition Methods 0.000 claims description 49
- 239000013078 crystal Substances 0.000 claims description 47
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Abstract
The invention discloses an electrode structure and a manufacturing method thereof as well as an array substrate and a manufacturing method thereof. The electrode structure comprises a first aluminum layer, a second aluminum layer and a metal layer, wherein the first aluminum layer is manufactured by using a radio-frequency magnetron sputtering method; the second aluminum layer is manufactured by using a DC (direct current) magnetron sputtering method; the metal layer is manufactured by using the DC magnetron sputtering method and is arranged above the first aluminum layer and the second aluminum layer; and the crystalline grains in the first aluminum layer are smaller than those in the second aluminum layer. In the invention, the first aluminum layer can release the compressive stresses more quickly, thus avoiding generating hillocks; the second aluminum layer has lower resistivity so that the requirement of electrode signal delay can be met; and meanwhile, the metal layer can inhibit hillocks growing on the surfaces of the aluminum layers. According to the invention, additional etching and anodic oxidation processes are not required and process cost is saved.
Description
Technical field
The present invention relates to lcd technology, especially a kind of electrode structure and preparation method, array base palte and preparation method.
Background technology
At present, flat panel display is the mainstream technology that liquid crystal display adopts, Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display wherein, be called for short: TFT-LCD) volume is little, power consumption is few, radiation is little and the resolution advantages of higher because it has, and becomes present most important flat panel display equipment.The TFT-LCD panel comprises array base palte and color filter film substrate, seal liquid crystal between two substrates up for safekeeping, (Printed Circuit Board is called for short: the parts such as PCB) to have reached the printed circuit board (PCB) of driving effect.Wherein array base palte comprises underlay substrate and the conductive pattern and the insulating barrier that form at underlay substrate, and conductive pattern comprises grid structure, data wire, source-drain electrode, active layer and pixel electrode, and insulating barrier comprises gate insulator and passivation layer.(Thin FilmTransistor, be called for short: connection TFT) or disconnection drive Liquid Crystal Molecules Alignment and change, thereby realize Presentation Function TFT-LCD by the control thin-film transistor.
Lcd technology along with the continuous increase of display area, shows the continuous expansion of quantity just towards large-screen, high-resolution future development, need to have the more electrode material of low-resistivity.Take grid material as example, tantalum (Ta), chromium (Cr) although etc. grid material have the advantage of fusing point height, good stability because the resistivity higher (＞20 μ Ω * cm) of its film can't satisfy the requirement that the tft array signal postpones.The metal such as aluminium (Al), copper (Cu) with low resistivity becomes the first-selection of grid material.The resistivity of Cu film is about 2.0 μ Ω * cm, substantially can satisfy the needs of the screen of following foreseeable arbitrary dimension, but Cu can with the materials such as silicon nitride (SiNx), amorphous silicon hydride (a-Si:H) in silicon (Si) atom generation kickback, form extremely unsettled silicon compound.The resistivity of Al film is about 3.3 μ Ω * cm, also can satisfy the needs of large scale liquid crystal screen, if but adopt pure Al as grid material, at chemical vapor deposition (the Plasma Enhanced ChemicalVapor Deposition that strengthens through plasma, be called for short: PECVD) when gate isolation and amorphous silicon active layer, temperature rises to 350 degree, and hillock can appear in the Al film surface.
Grain growth is similar with precipitation process in mechanism that film surface forms hillock and film, all is the result of Stress Release.There are two kinds of Stress Release Models can be used for explaining the generation of hillock, the first model thinks that the release of compression stress is confined near the hillock, compression stress between hillock is then mainly discharged with grain growth and precipitation process, and second model thinks that then the formation of hillock is the result of compression stress horizontal proliferation in the film.
The problem that occurs hillock for solving the Al film after heat treated, prior art provide three kinds of methods to be used for suppressing hillocks growth.Wherein, first method is to use rare earth metal or transient metal doped Al alloy target material, such as aluminium tantalum alloy (AlTa), aluminium neodymium alloy (AlNd), aluminium indium alloy (AlIn) etc., utilize other elements to the pinning effect of Al lattice, avoid hillock to generate; But the shortcoming of the method is to add other element rear film resistivity to raise, and has also improved cost simultaneously.Second method is to adopt etching technics to form cover layer on pure Al thin layer upper strata, forms resilient coating in lower floor; The method still can not be eliminated hillock fully, and owing to increase the step of etching, has increased process costs.The third method is to utilize anodic oxidation to form oxide layer at the Al film surface; The method needs the extra anodic oxidation step that increases, and has increased process costs.
Summary of the invention
The invention provides a kind of electrode structure and preparation method, array base palte and preparation method, avoid hillock to generate, save process costs.
The invention provides a kind of electrode structure, comprising: adopt the first aluminium lamination of radio-frequency magnetron sputter method preparation, adopt the second aluminium lamination of direct current magnetron sputtering process preparation, and adopt the metal level of direct current magnetron sputtering process preparation; Described metal level is positioned at the top of described the first aluminium lamination and described the second aluminium lamination;
Wherein, the crystal grain of described the first aluminium lamination is less than the crystal grain of described the second aluminium lamination.
The invention provides a kind of array base palte, comprising: underlay substrate and the conductive pattern and the insulating barrier that form at described underlay substrate, wherein, described conductive pattern comprises above-mentioned electrode structure at least.
The invention provides a kind of electrode structure preparation method, comprising:
Adopt the first process deposits the first aluminium film at underlay substrate;
On the underlay substrate of described the first aluminium film of deposition, adopt the second process deposits the second aluminium film;
On the underlay substrate of described the first aluminium film of deposition and the second aluminium film, adopt the direct current magnetron sputtering process depositing metal films;
By described the first aluminium film of composition technique etching, the second aluminium film and metallic film, form electrode structure;
Described the first technique is radio-frequency magnetron sputter method, and described the second technique is direct current magnetron sputtering process, and the crystal grain of described the first aluminium film is less than the crystal grain of described the second aluminium film; Perhaps, described the first technique is direct current magnetron sputtering process, and described the second technique is radio-frequency magnetron sputter method, and the crystal grain of described the first aluminium film is greater than the crystal grain of described the second aluminium film.
The invention provides a kind of array base palte preparation method, comprising:
Adopt above-mentioned electrode structure preparation method, form electrode structure at underlay substrate;
On the underlay substrate that forms electrode structure, form gate insulator, active layer, source-drain electrode, passivation layer and pixel electrode.
Among the present invention, an Al layer can discharge compression stress faster, has avoided the hillock generation; The resistivity of the 2nd Al layer is less, can satisfy the requirement that electrode signal postpones; Metal level also can suppress Al layer Surface Creation hillock simultaneously.The present invention need not to increase extra etching and anode oxidation process, has saved process costs.
Description of drawings
The partial structurtes schematic diagram of the electrode structure that Fig. 1 provides for the embodiment of the invention one;
The partial structurtes schematic diagram of the electrode structure that Fig. 2 provides for the embodiment of the invention two;
The partial structurtes schematic diagram of the electrode structure that Fig. 3 provides for the embodiment of the invention three;
The partial structurtes schematic diagram of the array base palte that Fig. 4 provides for the embodiment of the invention four;
The electrode structure preparation method's that Fig. 5 provides for the embodiment of the invention five flow chart;
The electrode structure preparation method's that Fig. 6 provides for the embodiment of the invention six flow chart;
The electrode structure preparation method's that Fig. 7 provides for the embodiment of the invention seven flow chart;
The array base palte preparation method's that Fig. 8 provides for the embodiment of the invention eight flow chart.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
The partial structurtes schematic diagram of the electrode structure that Fig. 1 provides for the embodiment of the invention one.As shown in Figure 1, present embodiment comprises an Al layer 11 that adopts the radio-frequency magnetron sputter method preparation, adopt the 2nd Al layer 12 of direct current magnetron sputtering process preparation, and the metal level 13 that adopts the direct current magnetron sputtering process preparation, wherein the crystal grain of an Al layer 11 is less than the crystal grain of the 2nd Al layer 12.The one Al layer 11 is positioned at the below of the 2nd Al layer 12, and metal level 13 is positioned at an Al layer 11 and the 2nd Al layer 12 top.
The electrode structure that present embodiment provides comprises three layers, and wherein an Al layer 11 adopts radio-frequency magnetron sputter method to be prepared from, and the crystal grain of an Al layer 11 is tiny, belongs to the pure Al layer of thin crystalline substance; The 2nd Al layer 12 adopts direct current magnetron sputtering process to be prepared from, and the crystal grain of the 2nd Al layer 12 is larger; Metal level 13 adopts direct current magnetron sputtering process to be prepared from.Under hot conditions, the crystal structure of Al layer and glass substrate does not mate, the coefficient of expansion has larger difference, can produce larger compression stress in contraction process, and the crystal grain of an Al layer 11 is tiny, compression stress is preferentially by an Al layer 11, compare with the 2nd Al layer 12, the propagation velocity of compression stress in the crystal grain of an Al layer 11 is faster, therefore by an Al layer 11, compression stress is discharged faster, has avoided the hillock generation.The effect of the 2nd Al layer 12 mainly is the transmission electrode signal, compares with metal level 13 with an Al layer 11, and the resistivity of the 2nd Al layer 12 is less, can satisfy the requirement that electrode signal postpones.
Further, the thickness of an Al layer 11 exists
Extremely
Between, the thickness of the 2nd Al layer 12 exists
Extremely
Between, the thickness of metal level 13 exists
Extremely
Between.In general, the thickness of the 2nd Al layer 12 is an Al layer 11 and metal level 13 thickness 2 to 3 times, can guarantee like this with enough low resistivity transmission electrode signal.Preferably, the thickness of the 2nd Al layer 12 is
The thickness of the one Al layer 11 not should less than
Can better play like this effect that discharges compression stress.
In the present embodiment, the material of metal level 13 can be molybdenum (Mo), or titanium (Ti), or tantalum (Ta), or the comparatively stable material of chemical property such as chromium (Cr).The below describes as the Mo layer as example take metal level 13.Because the chemical property of Al is more active, easily with the semiconductor amorphous silicon layer in silicon react, generation Al silicon compound, the character of Mo is more stable, present embodiment is formed with the Mo layer on the 2nd Al layer 12, can effectively isolate the 2nd Al layer 12 and semiconductor amorphous silicon layer.Further, the coefficient of expansion of Mo and glass substrate approach, and the Mo layer does not have hillock to generate under hot conditions, and the hardness of Mo is higher than Al, and the Mo layer can weaken the strain that the 2nd Al layer 12 affected by force produce, and further suppresses the generation of Al layer surface hillock.
The electrode structure that present embodiment provides can be grid structure, also can be public electrode structure or source leakage electrode structure, can also be other electrode structure in the semiconductor applications.
The process that forms the electrode structure that present embodiment provides at underlay substrate can be described as follows:
If underlay substrate is glass substrate, at first adopt cleaning fluid and ultrasonic wave that glass substrate is cleaned, check molecule quantity, satisfactory glass substrate is transported to waits for deposition in the magnetic-controlled sputtering coating equipment.
With magnetic-controlled sputtering coating equipment furnishing rf-mode, regulate the parameters such as argon (Ar) flow, Ar pressure, sputter rate, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
An Al film.
With magnetic-controlled sputtering coating equipment furnishing DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
The 2nd Al film.
The rotary machine hand is adjusted to the metal targets place with underlay substrate, and magnetic-controlled sputtering coating equipment keeps DC mode, regulates the parameters such as Ar flow, Ar pressure, power, underlayer temperature, and under vacuum condition, deposit thickness is on underlay substrate
Metallic film.
Deposit complete after, enter the exposure etching procedure, corresponding electrode mask plate patterns is printed on the underlay substrate, remove photoresist, form electrode structure shown in Figure 1 at underlay substrate.Particularly, through the overexposure etching procedure, an Al film is etched to an Al layer 11, the two Al film and is etched to the 2nd Al layer 12, and metallic film is etched to metal level 13.
The electrode structure that present embodiment provides is under hot conditions, and an Al layer can discharge compression stress faster, has avoided the hillock generation; The resistivity of the 2nd Al layer is less, can satisfy the requirement that electrode signal postpones; Metal level also can suppress Al layer Surface Creation hillock simultaneously.Present embodiment need not to increase extra etching and anode oxidation process, has saved process costs.
The partial structurtes schematic diagram of the electrode structure that Fig. 2 provides for the embodiment of the invention two.As shown in Figure 2, present embodiment comprises an Al layer 21 that adopts the radio-frequency magnetron sputter method preparation, adopt the 2nd Al layer 22 of direct current magnetron sputtering process preparation, and the metal level 23 that adopts the direct current magnetron sputtering process preparation, wherein the crystal grain of an Al layer 21 is less than the crystal grain of the 2nd Al layer 22.The one Al layer 21 is positioned at the top of the 2nd Al layer 22, and metal level 23 is positioned at an Al layer 21 and the 2nd Al layer 22 top.
The electrode structure that present embodiment provides comprises three layers, and wherein an Al layer 21 adopts radio-frequency magnetron sputter method to be prepared from, and the crystal grain of an Al layer 21 is tiny, belongs to the pure Al layer of thin crystalline substance; The 2nd Al layer 22 adopts direct current magnetron sputtering process to be prepared from, and the crystal grain of the 2nd Al layer 22 is larger; Metal level 23 adopts direct current magnetron sputtering process to be prepared from.Under hot conditions, the crystal structure of Al layer and glass substrate does not mate, the coefficient of expansion has larger difference, can produce larger compression stress in contraction process, and the crystal grain of an Al layer 21 is tiny, compression stress is preferentially by an Al layer 21, compare with the 2nd Al layer 22, the propagation velocity of compression stress in the crystal grain of an Al layer 21 is faster, therefore by an Al layer 21, compression stress is discharged faster, has avoided the hillock generation.The effect of the 2nd Al layer 22 mainly is the transmission electrode signal, compares with metal level 23 with an Al layer 21, and the resistivity of the 2nd Al layer 22 is less, can satisfy the requirement that electrode signal postpones.
Further, the thickness of an Al layer 21 exists
Extremely
Between, the thickness of the 2nd Al layer 22 exists
Extremely
Between, the thickness of metal level 23 exists
Extremely
Between.In general, the thickness of the 2nd Al layer 22 is an Al layer 21 and metal level 23 thickness 2 to 3 times, can guarantee like this with enough low resistivity transmission electrode signal.Preferably, the thickness of the 2nd Al layer 22 is
The thickness of the one Al layer 21 not should less than
Can better play like this effect that discharges compression stress.
In the present embodiment, the material of metal level 23 can be Mo, or Ti, or Ta, or the comparatively stable material of chemical property such as Cr.The below describes as the Mo layer as example take metal level 23.Because the chemical property of Al is more active, easily with the semiconductor amorphous silicon layer in silicon react, generation Al silicon compound, the character of Mo is more stable, present embodiment is formed with the Mo layer on an Al layer 21, can effectively isolate an Al layer 21 and semiconductor amorphous silicon layer.Further, the coefficient of expansion of Mo and glass substrate approach, and the Mo layer does not have hillock to generate under hot conditions, and the hardness of Mo is higher than Al, and the Mo layer can weaken the strain that the 2nd Al layer 22 affected by force produce, and suppresses the generation of Al layer surface hillock.
The electrode structure that present embodiment provides can be grid structure, also can be public electrode structure or source leakage electrode structure, can also be other electrode structure in the semiconductor applications.
The process that forms the electrode structure that present embodiment provides at underlay substrate can be described as follows:
If underlay substrate is glass substrate, at first adopt cleaning fluid and ultrasonic wave that glass substrate is cleaned, check molecule quantity, satisfactory glass substrate is transported to waits for deposition in the magnetic-controlled sputtering coating equipment.
With magnetic-controlled sputtering coating equipment furnishing DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
The 2nd Al film.
With magnetic-controlled sputtering coating equipment furnishing rf-mode, regulate the parameters such as Ar flow, Ar pressure, sputter rate, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
An Al film.
The rotary machine hand is adjusted to the metal targets place with underlay substrate, with magnetic-controlled sputtering coating equipment furnishing DC mode, regulates the parameters such as Ar flow, Ar pressure, power, underlayer temperature, and under vacuum condition, deposit thickness is on underlay substrate
Metallic film.
Deposit complete after, enter the exposure etching procedure, corresponding electrode mask plate patterns is printed on the underlay substrate, remove photoresist, form electrode structure shown in Figure 2 at underlay substrate.Particularly, through the overexposure etching procedure, the 2nd Al film is etched to the 2nd Al layer 22, the one Al film and is etched to an Al layer 21, and metallic film is etched to metal level 23.
The electrode structure that present embodiment provides is under hot conditions, and an Al layer can discharge compression stress faster, has avoided the hillock generation; The resistivity of the 2nd Al layer is less, can satisfy the requirement that electrode signal postpones; Metal level also can suppress Al layer Surface Creation hillock simultaneously.Present embodiment need not to increase extra etching and anode oxidation process, has saved process costs.
The partial structurtes schematic diagram of the electrode structure that Fig. 3 provides for the embodiment of the invention three.As shown in Figure 3, present embodiment comprises an Al layer 31 that adopts the radio-frequency magnetron sputter method preparation, adopt the 2nd Al layer 32 of direct current magnetron sputtering process preparation, adopt the 3rd Al layer 33 of direct current magnetron sputtering process preparation, and the metal level 34 that adopts the direct current magnetron sputtering process preparation, wherein the crystal grain of an Al layer 31 is less than the crystal grain of the 2nd Al layer 32, and the crystal grain of an Al layer 31 is less than the crystal grain of the 3rd Al layer 33.The one Al layer 31 is positioned at the top of the 2nd Al layer 32, and the 3rd Al layer 33 is positioned at the top of an Al layer 31, and metal level 34 is positioned at the top of the 3rd Al layer 33.
The electrode structure that present embodiment provides comprises four layers, and wherein an Al layer 31 adopts radio-frequency magnetron sputter method to be prepared from, and the crystal grain of an Al layer 31 is tiny, belongs to the pure Al layer of thin crystalline substance; The 2nd Al layer 32 adopts direct current magnetron sputtering process to be prepared from, and the crystal grain of the 2nd Al layer 32 is larger; The 3rd Al layer 33 adopts direct current magnetron sputtering process to be prepared from, and the crystal grain of the 3rd Al layer 33 is also larger; Metal level 34 adopts direct current magnetron sputtering process to be prepared from.Under hot conditions, the crystal structure of Al layer and glass substrate does not mate, the coefficient of expansion has larger difference, can produce larger compression stress in contraction process, and the crystal grain of an Al layer 31 is tiny, compression stress is preferentially by an Al layer 31, compare with the 3rd Al layer 33 with the 2nd Al layer 32, the propagation velocity of compression stress in the crystal grain of an Al layer 31 is faster, therefore by an Al layer 31, compression stress is discharged faster, has avoided the hillock generation.The effect of the 2nd Al layer 32 and the 3rd Al layer 33 mainly is the transmission electrode signal, compares with metal level 34 with an Al layer 31, and the resistivity of the 2nd Al layer 32 is less, can satisfy the requirement that electrode signal postpones.And compare with embodiment two with embodiment one, the Al layer that crystal grain is larger in the present embodiment is thicker, so that the resistivity of whole electrode structure is less, more is conducive to the transmission of electrode signal.
Further, the thickness of an Al layer 31 exists
Extremely
Between, the thickness of the 2nd Al layer 32 exists
Extremely
Between, the thickness of the 3rd Al layer 33 exists
Extremely
Between, the thickness of metal level 34 exists
Extremely
Between.In general, the thickness of the 2nd Al layer 32 and the 3rd Al layer 33 is an Al layer 31 and metal level 34 thickness 2 to 3 times, can guarantee like this with enough low resistivity transmission electrode signal.
In the present embodiment, the material of metal level 34 can be Mo, or Ti, or Ta, or the comparatively stable material of chemical property such as Cr.The below describes as the Mo layer as example take metal level 34.Because the chemical property of Al is more active, easily with the semiconductor amorphous silicon layer in silicon react, generation Al silicon compound, the character of Mo is more stable, present embodiment is formed with the Mo layer on the 3rd Al layer 33, can effectively isolate the 3rd Al layer 33 and semiconductor amorphous silicon layer.Further, the coefficient of expansion of Mo and glass substrate approach, and the Mo layer does not have hillock to generate under hot conditions, and the hardness of Mo is higher than Al, the Mo layer can weaken the strain that the 2nd Al layer 32 and the 3rd Al layer 33 affected by force produce, and suppresses the generation of Al layer surface hillock.
The electrode structure that present embodiment provides can be grid structure, also can be public electrode structure or source leakage electrode structure, can also be other electrode structure in the semiconductor applications.
The process that forms the electrode structure that present embodiment provides at underlay substrate can be described as follows:
If underlay substrate is glass substrate, at first adopt cleaning fluid and ultrasonic wave that glass substrate is cleaned, check molecule quantity, satisfactory glass substrate is transported to waits for deposition in the magnetic-controlled sputtering coating equipment.
With magnetic-controlled sputtering coating equipment furnishing DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
The 2nd Al film.
With magnetic-controlled sputtering coating equipment furnishing rf-mode, regulate the parameters such as Ar flow, Ar pressure, sputter rate, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
An Al film.
With magnetic-controlled sputtering coating equipment furnishing DC mode, will regulate the parameters such as Ar flow, Ar pressure, sputter rate, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
The 3rd Al film.
The rotary machine hand is adjusted to the metal targets place with underlay substrate, and magnetic-controlled sputtering coating equipment keeps DC mode, regulates the parameters such as Ar flow, Ar pressure, sputter rate, underlayer temperature, and under vacuum condition, deposit thickness is on underlay substrate
Metallic film.
Deposit complete after, enter the exposure etching procedure, corresponding electrode mask plate patterns is printed on the underlay substrate, remove photoresist, form electrode structure shown in Figure 3 at underlay substrate.Particularly, through the overexposure etching procedure, the 2nd Al film is etched to the 2nd Al layer 32, the one Al film and is etched to an Al layer 31, the three Al film and is etched to the 3rd Al layer 33, and metallic film is etched to metal level 34.
The electrode structure that present embodiment provides is under hot conditions, and an Al layer can discharge compression stress faster, has avoided the hillock generation; The resistivity of the 2nd Al layer and the 3rd Al layer is less, can satisfy the requirement that electrode signal postpones; Metal level also can suppress Al layer Surface Creation hillock simultaneously.Present embodiment need not to increase extra etching and anode oxidation process, has saved process costs.
The partial structurtes schematic diagram of the array base palte that Fig. 4 provides for the embodiment of the invention four.As shown in Figure 4, present embodiment comprises underlay substrate 40 and the conductive pattern and the insulating barrier that form at underlay substrate 40, wherein conductive pattern comprises one of them of electrode structure that above-described embodiment one to three provides at least, and grid 41 is one of them of electrode structure that above-described embodiment one to three provides in the array base palte that Fig. 4 provides.
See Fig. 4, conductive pattern also comprises semiconductor active layer 42, doped semiconductor active layer 43, source-drain electrode 44 and pixel electrode 45, and insulating barrier comprises gate insulator 46 and passivation layer 47.Wherein, source-drain electrode 44 is formed at the top of doped semiconductor active layer 43, form raceway groove 48 between source electrode and the drain electrode, grid 41 is positioned under the raceway groove 48, keep apart by gate insulator 46 between grid 41 and the source-drain electrode 44, the wherein electrode in the source-drain electrode 44 is connected with pixel electrode 45 by via hole 49.
One of them of the electrode structure that array base palte employing above-described embodiment one to three that present embodiment provides provides avoided the hillock generation, and satisfied the requirement that signal postpones, and saved process costs as grid.The array base palte that present embodiment provides also can adopt above-mentioned electrode structure as source-drain electrode.
Need to prove that array base palte provided by the present invention is not limited only to structure shown in Figure 4, adopt the array base palte of electrode structure provided by the invention all to belong to invention which is intended to be protected.
The electrode structure preparation method's that Fig. 5 provides for the embodiment of the invention five flow chart.In the present embodiment, the first technique is radio-frequency magnetron sputter method, and the second technique is direct current magnetron sputtering process, and the crystal grain of the first aluminium film is less than the crystal grain of the second aluminium film.As shown in Figure 5, present embodiment specifically comprises the steps:
Step 101, adopt radio-frequency magnetron sputter method to deposit an Al film at underlay substrate;
The electrode structure that present embodiment is prepared from can be referring to Fig. 1, and wherein an Al film is etched to an Al layer, and the 2nd Al film is etched to the 2nd Al layer, and metallic film is etched to metal level.
Further, above-mentioned deposition the first aluminium film, deposition the second aluminium film, depositing metal films all are to carry out under vacuum condition.
Specifically, before above steps, at first adopt cleaning fluid and ultrasonic wave that underlay substrate is cleaned, check molecule quantity, satisfactory underlay substrate is transported to waits for deposition in the magnetic-controlled sputtering coating equipment.
In above-mentioned steps 101, with magnetic-controlled sputtering coating equipment furnishing rf-mode, regulate the parameters such as Ar flow, Ar pressure, sputter rate, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
An Al film, preferably, deposit thickness is on underlay substrate
An Al film.
In above-mentioned steps 102, with magnetic-controlled sputtering coating equipment furnishing DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on the underlay substrate of deposition the one Al film
The 2nd Al film, preferably, the deposition the one Al film underlay substrate on deposit thickness be
The 2nd Al film.
In above-mentioned steps 103, the rotary machine hand, underlay substrate is adjusted to the metal targets place, magnetic-controlled sputtering coating equipment keeps DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on the underlay substrate of deposition the one Al film and the 2nd Al film
Metallic film, preferably, deposit thickness is on the underlay substrate of deposition the one Al film and the 2nd Al film
Metallic film.In the present embodiment, the material of metallic film can be Mo, or Ti, or Ta, or the comparatively stable material of chemical property such as Cr.
In step 104, adopt the exposure etching procedure, the electrode mask plate patterns is printed on the underlay substrate, remove photoresist, form electrode structure shown in Figure 1 at underlay substrate.
Adopt the electrode structure of the method preparation that present embodiment provides to be grid structure, also can be public electrode structure or source leakage electrode structure, can also be other electrode structure in the semiconductor applications.
The electrode structure that the electrode structure preparation method that present embodiment provides is prepared from is under hot conditions, and an Al layer can discharge compression stress faster, has avoided the hillock generation; The resistivity of the 2nd Al layer is less, can satisfy the requirement that electrode signal postpones; Metal level also can suppress Al layer Surface Creation hillock simultaneously.Present embodiment need not to increase extra etching and anode oxidation process, has saved process costs.
The electrode structure preparation method's that Fig. 6 provides for the embodiment of the invention six flow chart.In the present embodiment, the first technique is direct current magnetron sputtering process, and the second technique is radio-frequency magnetron sputter method, and the crystal grain of the first aluminium film is greater than the crystal grain of the second aluminium film.As shown in Figure 6, present embodiment specifically comprises the steps:
The electrode structure that present embodiment is prepared from can be referring to Fig. 2, and wherein an Al film is etched to the 2nd Al layer, and the 2nd Al film is etched to an Al layer, and metallic film is etched to metal level.
Further, above-mentioned deposition the first aluminium film, deposition the second aluminium film, depositing metal films all are to carry out under vacuum condition.
Specifically, before above steps, at first adopt cleaning fluid and ultrasonic wave that underlay substrate is cleaned, check molecule quantity, satisfactory underlay substrate is transported to waits for deposition in the magnetic-controlled sputtering coating equipment.
In above-mentioned steps 201, with magnetic-controlled sputtering coating equipment furnishing DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
An Al film.
In above-mentioned steps 202, with magnetic-controlled sputtering coating equipment furnishing rf-mode, regulate the parameters such as Ar flow, Ar pressure, sputter rate, underlayer temperature, under vacuum condition, deposit thickness is on the underlay substrate of deposition the one Al film
The 2nd Al film.
In above-mentioned steps 203, the rotary machine hand, underlay substrate is adjusted to the metal targets place, with magnetic-controlled sputtering coating equipment furnishing DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on the underlay substrate of deposition the one Al film and the 2nd Al film
Metallic film.In the present embodiment, the material of metallic film can be Mo, or Ti, or Ta, or the comparatively stable material of chemical property such as Cr.
In above-mentioned steps 204, adopt the exposure etching procedure, the electrode mask plate patterns is printed on the underlay substrate, remove photoresist, form electrode structure shown in Figure 2 at underlay substrate.
Adopt the electrode structure of the method preparation that present embodiment provides to be grid structure, also can be public electrode structure or source leakage electrode structure, can also be other electrode structure in the semiconductor applications.
The electrode structure that the electrode structure preparation method that present embodiment provides is prepared from is under hot conditions, and an Al layer can discharge compression stress faster, has avoided the hillock generation; The resistivity of the 2nd Al layer is less, can satisfy the requirement that electrode signal postpones; Metal level also can suppress Al layer Surface Creation hillock simultaneously.Present embodiment need not to increase extra etching and anode oxidation process, has saved process costs.
The electrode structure preparation method's that Fig. 7 provides for the embodiment of the invention seven flow chart.In the present embodiment, the first technique is direct current magnetron sputtering process, and the second technique is radio-frequency magnetron sputter method, and the crystal grain of the first aluminium film is greater than the crystal grain of the second aluminium film.As shown in Figure 7, present embodiment specifically comprises the steps:
Step 304, on the underlay substrate of deposition the first aluminium film, the second aluminium film and the 3rd aluminium film, adopt the direct current magnetron sputtering process depositing metal films;
Step 305, by composition technique etching the one Al film, the 2nd Al film, the 3rd Al film and metallic film, form electrode structure.
The electrode structure that present embodiment is prepared from can be referring to Fig. 3, and wherein an Al film is etched to the 2nd Al layer, and the 2nd Al film is etched to an Al layer, and the 3rd Al film is etched to the 3rd Al layer, and metallic film is etched to metal level.
Further, above-mentioned deposition the first aluminium film, deposition the second aluminium film, deposition the 3rd aluminium film, depositing metal films all are to carry out under vacuum condition.
Specifically, before above steps, at first adopt cleaning fluid and ultrasonic wave that underlay substrate is cleaned, check molecule quantity, satisfactory underlay substrate is transported to waits for deposition in the magnetic-controlled sputtering coating equipment.
In above-mentioned steps 301, with magnetic-controlled sputtering coating equipment furnishing DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on underlay substrate
An Al film, preferably, deposit thickness is on underlay substrate
An Al film.
In above-mentioned steps 302, with magnetic-controlled sputtering coating equipment furnishing rf-mode, regulate the parameters such as Ar flow, Ar pressure, sputter rate, underlayer temperature, under vacuum condition, deposit thickness is on the underlay substrate of deposition the one Al film
The 2nd Al film, preferably, the deposition the one Al film underlay substrate on deposit thickness be
The 2nd Al film.
In above-mentioned steps 303, with magnetic-controlled sputtering coating equipment furnishing DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on the underlay substrate of deposition the first aluminium film and the second aluminium film
The 3rd Al film, preferably, deposit thickness is on the underlay substrate of deposition the first aluminium film and the second aluminium film
The 3rd Al film.
In above-mentioned steps 304, the rotary machine hand, underlay substrate is adjusted to the metal targets place, magnetic-controlled sputtering coating equipment keeps DC mode, regulate the parameters such as Ar flow, Ar pressure, power, underlayer temperature, under vacuum condition, deposit thickness is on the underlay substrate of deposition the first aluminium film, the second aluminium film and the 3rd aluminium film
Metallic film, preferably, the deposition the first aluminium film, the second aluminium film and the 3rd aluminium film underlay substrate on deposit thickness be
Metallic film.In the present embodiment, the material of metallic film can be Mo, or Ti, or Ta, or the comparatively stable material of chemical property such as Cr.
In above-mentioned steps 305, adopt the exposure etching procedure, the electrode mask plate patterns is printed on the underlay substrate, remove photoresist, form electrode structure shown in Figure 3 at underlay substrate.
Adopt the electrode structure of the method preparation that present embodiment provides to be grid structure, also can be public electrode structure or source leakage electrode structure, can also be other electrode structure in the semiconductor applications.
The electrode structure that the electrode structure preparation method that present embodiment provides is prepared from is under hot conditions, and an Al layer can discharge compression stress faster, has avoided the hillock generation; The resistivity of the 2nd Al layer is less, can satisfy the requirement that electrode signal postpones; Metal level also can suppress Al layer Surface Creation hillock simultaneously.Present embodiment need not to increase extra etching and anode oxidation process, has saved process costs.
The array base palte preparation method's that Fig. 8 provides for the embodiment of the invention eight flow chart.As shown in Figure 8, present embodiment specifically comprises the steps:
One of them of the electrode structure preparation method that step 401, employing above-described embodiment five to embodiment seven provide forms electrode structure at underlay substrate;
Step 402, forming on the underlay substrate of electrode structure, form gate insulator, active layer, source-drain electrode, passivation layer and pixel electrode.
Further, step 402 can comprise:
Utilize the n+ amorphous silicon layer semiconductor active layer of pecvd process deposited silicon nitride gate insulator, amorphous silicon semiconductor active layer and Doping Phosphorus; Utilize K-Mac testing film thickness, utilize Mac/Mic observation to have or not more hillock to generate; As generate sedimentary origin drain electrode film on magnetic-controlled sputtering coating equipment, the etching procedure that exposes, formation raceway groove and source-drain electrode without more hillock;
Deposit passivation layer, then gluing, exposure, development, an electrode place forms a via hole in source-drain electrode, is used for connecting pixel electrode;
Deposit transparent pixel electrode film carries out masking process, forms pixel electrode.
One of them of the electrode structure preparation method that present embodiment employing above-described embodiment five to embodiment seven provides forms grid structure at underlay substrate, avoided the hillock generation, and satisfied the requirement that signal postpones, and saved process costs.Present embodiment also can adopt above-mentioned electrode structure preparation method to prepare source-drain electrode.
The preparation method of above-mentioned array base palte is four exposure technologys, and array base palte preparation method provided by the present invention is not limited only to this, comprises that the array base palte preparation method of above-mentioned steps 401 all belongs to invention which is intended to be protected.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (9)
1. an electrode structure is characterized in that, comprising: adopt the first aluminium lamination of radio-frequency magnetron sputter method preparation, adopt the second aluminium lamination of direct current magnetron sputtering process preparation, and adopt the metal level of direct current magnetron sputtering process preparation; Described metal level is positioned at the top of described the first aluminium lamination and described the second aluminium lamination;
Wherein, the crystal grain of described the first aluminium lamination is less than the crystal grain of described the second aluminium lamination; Described the first aluminium lamination is positioned at the top of the second aluminium lamination;
Described electrode structure also comprises: adopt the 3rd aluminium lamination of direct current magnetron sputtering process preparation, described the 3rd aluminium lamination is positioned at the top of described the first aluminium lamination, and the crystal grain of described the first aluminium lamination is less than the crystal grain of described the 3rd aluminium lamination.
2. electrode structure according to claim 1 is characterized in that, the thickness of described the first aluminium lamination exists
Extremely
Between, the thickness of described the second aluminium lamination exists
Extremely
Between.
3. electrode structure according to claim 1 is characterized in that, the thickness of described the first aluminium lamination exists
Extremely
Between, the thickness of described the second aluminium lamination exists
Extremely
Between.
4. electrode structure according to claim 1 is characterized in that, the thickness of described the first aluminium lamination exists
Extremely
Between, the thickness of described the second aluminium lamination exists
Extremely
Between, the thickness of described the 3rd aluminium lamination exists
Extremely
Between.
5. according to claim 1 to 4 arbitrary described electrode structures, it is characterized in that the thickness of described metal level exists
Extremely
Between.
6. an array base palte comprises underlay substrate and, it is characterized in that described conductive pattern comprises arbitrary described electrode structure such as claim 1-5 at least at conductive pattern and insulating barrier that described underlay substrate forms.
7. an electrode structure preparation method is characterized in that, comprising:
Adopt the first process deposits the first aluminium film at underlay substrate;
On the underlay substrate of described the first aluminium film of deposition, adopt the second process deposits the second aluminium film;
On the underlay substrate of described the first aluminium film of deposition and the second aluminium film, adopt the direct current magnetron sputtering process depositing metal films;
By described the first aluminium film of composition technique etching, the second aluminium film and metallic film, form electrode structure;
Described the first technique is direct current magnetron sputtering process, and described the second technique is radio-frequency magnetron sputter method, and the crystal grain of described the first aluminium film is greater than the crystal grain of described the second aluminium film;
After described employing the second process deposits the second aluminium film, also comprise before the depositing metal films: on the underlay substrate of described the first aluminium film of deposition and the second aluminium film, adopt direct current magnetron sputtering process to deposit the 3rd aluminium film, the crystal grain of described the 3rd aluminium film is greater than the crystal grain of described the second aluminium film.
8. electrode structure preparation method according to claim 7 is characterized in that, described deposition the first aluminium film, deposition the second aluminium film, depositing metal films all are to carry out under vacuum condition.
9. an array base palte preparation method is characterized in that, comprising:
Adopt such as claim 7 or 8 described electrode structure preparation methods, form electrode structure at underlay substrate;
On the underlay substrate that forms electrode structure, form gate insulator, active layer, source-drain electrode, passivation layer and pixel electrode.
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| CN101685229A (en) * | 2008-09-25 | 2010-03-31 | 北京京东方光电科技有限公司 | Method for manufacturing array substrate of liquid crystal display device |
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| CN101685229A (en) * | 2008-09-25 | 2010-03-31 | 北京京东方光电科技有限公司 | Method for manufacturing array substrate of liquid crystal display device |
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