CN102227689A - Detergent combination for removing photoresist - Google Patents

Detergent combination for removing photoresist Download PDF

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Publication number
CN102227689A
CN102227689A CN2009801483637A CN200980148363A CN102227689A CN 102227689 A CN102227689 A CN 102227689A CN 2009801483637 A CN2009801483637 A CN 2009801483637A CN 200980148363 A CN200980148363 A CN 200980148363A CN 102227689 A CN102227689 A CN 102227689A
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China
Prior art keywords
borate
cleansing composition
boric acid
acids
ether
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CN2009801483637A
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Chinese (zh)
Inventor
彭洪修
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Anji Microelectronics Shanghai Co Ltd
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Anji Microelectronics Shanghai Co Ltd
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Priority to CN2009801483637A priority Critical patent/CN102227689A/en
Publication of CN102227689A publication Critical patent/CN102227689A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C11D2111/22—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3445—Organic compounds containing sulfur containing sulfino groups, e.g. dimethyl sulfoxide
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur

Abstract

A detergent combination for removing photo resist includes quaternary ammonium hydroxide, water, alkyl glycol aryl ether in which the alkyl glycol has 3-18 carbon atoms, dimethyl sulfoxide and corrosion inhibitor. At least one corrosion inhibitor is selected from boric acid, borate and boric acid ester. The detergent combination for removing photo resist further includes polar organic co-solvent, surfactant and /or other corrosion inhibitor. The detergent combination can clean photo resist and residues on a metal, metal alloy and dielectric substrate.

Description

A kind of photoresist cleansing composition
A kind of photoresist cleansing composition
Technical field
The present invention relates to a kind of cleansing composition in semiconductor fabrication process, more particularly to a kind of photoresist cleansing composition.Technical background
In common semiconductor fabrication process, first in silica, Cu (copper）Deng the coating that photoresist is formed on the surfaces such as metal and low-k materials, it is exposed, is developed using appropriate mask, according to characteristic with photoresist, remove the photoresist of exposure or unexposed portion, photoetching agent pattern is formed at required position, then plasma etching or reactant gas etching are carried out on the photoetching agent pattern, pattern transfer is carried out.The quick cleaning of low temperature is the important directions of semiconductor wafer fabrication process development.The negative photoresist of 20 μ η ι above thickness is just gradually applied in semiconductor wafer fabrication process, and the cleansing power of industrial most photoetching gluing cleaning agent aligning property photoresist is preferable at present, but it can not thoroughly remove the especially thick film negative photoresist of the negative photoresist with cross-linked structure after exposed on chip and etching.
In the Process of Chemical Cleaning that semiconductor wafer carries out photoresist, cleaning agent can often cause the corrosion of wafer pattern and base material.Particularly during photoresist and etch residue is removed using chemical, metal（Especially aluminium and copper etc. are compared with active metal）The problem of corrosion is more universal and very serious, often leads to significantly reducing for wafer yield.
At present, photoresist cleansing composition is mainly made up of highly basic, polar organic solvent and/or water etc., by being immersed semiconductor wafer in cleaning agent or rinsing semiconductor wafer using cleaning agent, removes the photoresist on semiconductor wafer. Highly basic such as potassium hydroxide, quaternary ammonium hydroxide and hydramine etc., can dissolve the resist residue produced by photoresist and/or etching.When highly basic content is too low, cleaning agent is not enough to the removal ability of the resist residue produced by photoresist and/or etching；But during highly basic too high levels, cleaning agent easily causes the corrosion of wafer pattern and base material.Compared with the cleaning agent being made up of hydramine, the cleaning agent containing potassium hydroxide or quaternary ammonium hydroxide is preferable to the removal ability of the resist residue produced by photoresist and/or etching.But the cleaning agent containing potassium hydroxide easily causes the corrosion of wafer pattern and base material, and based on its removal in peel way to photoresist, photoresist formation fragment shape overburden or glue is set to be swelled thing, deposition or adhesion of the photoresist in wafer surface are easily caused, the damage of wafer pattern is even resulted in.Removal of the cleaning agent containing quaternary ammonium hydroxide to photoresist has two kinds of effects of stripping and dissolving concurrently, does not result in deposition or adhesion of the photoresist in wafer surface.
Polar organic solvent can dissolve the resist residue produced by photoresist and/or etching, improve cleansing power of the chemical to organic matter.When polar organic solvent content is too low, cleaning agent is not enough to the removal ability of the resist residue produced by photoresist and/or etching;But during polar organic solvent too high levels, the highly basic content in cleaning agent is accordingly reduced so that cleaning agent weakens to the removal ability of the resist residue produced by photoresist and/or etching.
In order to improve hydrolysis and/or solvability of the cleaning agent to the resist residue produced by photoresist and/or etching, the water in chemical is sometimes required.But when water content is too high, cleaning agent is not enough to the removal ability of the resist residue produced by photoresist and/or etching, and easily causes the corrosion of wafer pattern and base material.
The photoetching gluing cleaning agent being made up of hydramine and organic polar solvent is proposed in US4617251.Semiconductor wafer is immersed in the cleaning agent, the positive photoresist on chip is removed under 95 °C.Water is not contained in the cleaning agent, and its cleansing power to negative photoresist is not enough. The photoetching gluing cleaning agent being made up of hydramine, water-miscible organic solvent, water, organic phenolic compounds, triazole compounds and poly- silica protective embankment surfactant is proposed in US6140027.Semiconductor wafer is immersed in the cleaning agent, the photoresist on chip and the resist residue produced by etching are removed under 20 50 °C.The cleaning agent is used as the corrosion inhibiter for suppressing metal erosion using organic phenolic compounds and triazole compounds.Organic phenolic compounds is harmful, and environment can be polluted, and the cleaning agent is not enough to the cleansing power of negative photoresist.
The photoetching gluing cleaning agent that the water for being less than 1% by potassium hydroxide, propylene glycol, 1-METHYLPYRROLIDONE, surfactant, 1,3 butylene glycol, diglycolamine and weight/mass percentage composition is constituted is proposed in US5962197.Semiconductor wafer is immersed in the cleaning agent, the photoresist on chip is removed under 90 110 °C.Contain potassium hydroxide in the cleaning agent, the corrosion to wafer substrate is higher, and the fragment shape overburden that is formed of its stripping photoresist or glue are swelled thing and can deposited on a surface of a wafer or adhesion, cause the residual of photoresist and the damage of wafer pattern.
The photoetching gluing cleaning agent being made up of TMAH, N- methylmorpholine-N- oxides, water and 2-mercaptobenzimidazole is proposed in WO2004059700.Semiconductor wafer is immersed in the cleaning agent, the photoresist on chip is removed under 70 °C.The cleaning agent need to clean photoresist at relatively high temperatures, and the corrosion to semiconductor wafer pattern and base material is slightly higher, and show slightly not enough to the cleansing power of photoresist.
Proposed in US6040117 by quaternary ammonium hydroxide, dimethyl sulfoxide (DMSO), 1,3, the photoetching gluing cleaning agent that-dimethyl -2- imidazolidinones and water are constituted.Semiconductor wafer is immersed in the cleaning agent, metal is removed under 40 ~ 95 °C（Gold, copper, lead or nickel）The photoresist of Ι Ο μ ι η above thickness on base material.The cleaning agent uses 1, the 3'- dimethyl -2- imidazoles protective embankment ketone of price costly as organic cosolvent, and does not contain suppression metal（Especially aluminium etc. is compared with active metal）The corrosion inhibiter of corrosion.The cleaning agent need to clean photoresist at relatively high temperatures, and the corrosion to semiconductor wafer pattern and base material is slightly higher. The photoetching gluing cleaning agent being made up of quaternary ammonium hydroxide, water-miscible organic solvent, organic amine, binary alcohol and water is proposed in JP2001215736.Semiconductor wafer is immersed in the cleaning agent, 20 μ η on chip are removed under 20 90 °C！The photoresist of 40 μ ι η thickness.The cleaning agent is using corrosion inhibiter of the dihydric alcohol as suppression metal erosion, but dihydric alcohol is very weak to the rejection ability of metal erosion, and can reduce cleansing power of the cleaning agent to photoresist especially negative photoresist.Corrosion of the cleaning agent to semiconductor wafer pattern and base material is slightly higher.
The photoetching gluing cleaning agent being made up of quaternary ammonium hydroxide, Ν-methylpyrrole protective embankment ketone, diethanol amine or triethanolamine, water and methanol or ethanol is proposed in JP2004093678.Semiconductor wafer is immersed in the cleaning agent, the photoresist of the Ι Ο μ η ι above thickness on chip is removed under 15 80 °C.The cleaning agent uses methanol or ethanol as the solubilizer of quaternary ammonium hydroxide, but the flash-point of methanol or ethanol is too low, and can reduce cleansing power of the cleaning agent to photoresist especially negative photoresist.The cleaning agent does not contain suppression metal（Especially aluminium and copper etc. are compared with active metal）The corrosion inhibiter of corrosion.Corrosion of the cleaning agent to semiconductor wafer pattern and base material is slightly higher.
In summary, the cleansing power of the existing photoetching gluing cleaning agent photoresist higher to thickness is not enough or stronger to the corrosivity of semiconductor wafer pattern and base material, there is larger defect.
Brief summary of the invention
The technical problem to be solved in the present invention is the defect not enough to thick film photolithography glue cleansing power, stronger to the corrosivity of semiconductor wafer pattern and base material and environmentally harmful that exists for existing photoetching gluing cleaning agent, and there is provided a kind of strong to thick film photolithography glue cleansing power and to the corrosivity of semiconductor wafer pattern and base material is relatively low, photoresist cleansing composition beneficial to environmental protection.
The present invention solves the technical scheme that is used of above-mentioned technical problem：A kind of photoresist cleansing composition, includes quaternary ammonium hydroxide, water, alkyl diol aryl ether, dimethyl sulfoxide (DMSO) and corrosion inhibiter；Wherein, the carbon atom number of protective embankment base glycol is 3 18 in described protective embankment base glycol aryl ether, and described sustained release agent is selected from One or more in boric acid, borate and borate.
In the present invention, one or more of the described quaternary ammonium hydroxide preferably in TMAH, tetraethyl ammonium hydroxide, TPAOH, TBAH and benzyltrimethylammonium hydroxide, one or more more preferably in TMAH, tetraethyl ammonium hydroxide and TBAH, it is optimal for TMAH.Its content is preferably 0.1 10wt%, more preferably l ~ 5wt%.
In the present invention, the content of described water is preferably 0.2 ~ 15wt%, more preferably 0.5 10wt %.In the present invention, described protective embankment base glycol aryl ether is preferably selected from propane diols list phenyl ether, Isopropanediol list phenyl ether, diethylene glycol list phenyl ether, DPG list phenyl ether, di-isopropylene glycol list phenyl ether, triethylene glycol list phenyl ether, tripropylene glycol list phenyl ether, three Isopropanediol list phenyl ethers, six condensed ethandiol list phenyl ethers, six contracting propane diols list phenyl ethers, six contracting Isopropanediol list phenyl ethers, propane diols single-benzyl ether, one or more in Isopropanediol single-benzyl ether and hexylene glycol list naphthyl ether, more preferably it is selected from propane diols list phenyl ether, one or more in DPG list phenyl ether and propane diols single-benzyl ether.The content of described protective embankment base glycol aryl ether is preferably 0.1 65wt%, more preferably 0.5 20.0wt%.Described protective embankment base glycol aryl ether can improve solubility of the TMAH in dimethyl sulfoxide (DMSO), and be less than ethylene glycol protective embankment base ether and ethylene glycol aryl ether etc., more conducively environmental protection to the harm of environment.
In the present invention, the content of described dimethyl sulfoxide (DMSO) is preferably l 98wt%, more preferably 30 90wt%.
In the present invention, described boric acid, borate and borate are preferably selected from boric acid, phenyl boric acid, 2- methylphenylboronic acids, 3- methylphenylboronic acids, 4- methylphenylboronic acids, 2, 3- dimethylphenyl boronic acids, 4- ethyl phenyl boric acids, 4- propyl group phenyl boric acids, 4- butyl phenyl boric acids, 2- methoxyphenylboronic acids, 3- methoxyphenylboronic acids, 4- methoxyphenylboronic acids, 3, 4- dimethoxyphenylboronics, 2- Carboxybenzeneboronic acids, 3- Carboxybenzeneboronic acids, 4- Carboxybenzeneboronic acids, 2- methylol phenyl boric acids, 3- methylol phenyl boric acids, 4- methylol phenyl boric acids, 2- thienyl boric acids, 3 thienylboronic acid, naphthalene boronic acids, ammonium borate, tetramethyl ammonium borate, tetraethyl ammonium borate, tetrapropyl ammonium borate, tetrabutyl ammonium borate, benzyl trimethyl ammonium borate, boric acid ethanolamine salt, boric acid diethanolamine salt, triethanolamine borate salt, boric acid diethylene glycol (DEG) amine salt, boric acid isopropanol amine salt, boric acid methyl ethanol amine salt, boric acid methyl diethanolamine salt, trimethylborate, triethyl borate, triproylborate, butyl borate, isoprene borate, duplex catechol borate, one or more in pinacol borate and boric acid imidazoline ester, more preferably it is selected from boric acid, phenyl boric acid, 2- Carboxybenzeneboronic acids, 2- methylol phenyl boric acids, tetramethyl ammonium borate, tetraethyl ammonium borate, boric acid ethanolamine salt, triethanolamine borate salt, one or more in boric acid diethylene glycol (DEG) amine salt and duplex catechol borate.Its content is preferably 0.01-10wt%, more preferably 0.1 ~ 5wt%.
In the present invention, described photoresist cleansing composition can also be further containing the one or more in other corrosion inhibiter selected from polarity organic cosolvent, surfactant and in addition to boric acid, borate and borate.Described polarity organic cosolvent content is preferably 50wt%, but does not include 0wt%, more preferably 5 30wt%;Described surface-active contents are preferably 5wt%, but do not include 0wt%, more preferably 0.05 3.0wt%;Described other inhibition agent contents in addition to the corrosion inhibiter of boric acid, borate and borate are preferably 5.0wt%, but do not include 0wt%, more preferably 0.05 ~ 3.0wt%.
In the present invention, the one or more of described polarity organic cosolvent preferably in sulfoxide, sulfone, imidazoles institute ketone, hydramine and protective embankment base glycol list protective embankment base ether.Wherein, described sulfoxide is preferably diethyl sulfoxide and/or first ethyl-sulfoxide；One or more of the described sulfone preferably in methyl sulfone, ethyl sulfone and sulfolane, more preferably sulfolane；Described imidazoles protective embankment ketone is preferably selected from the one or more in 2- imidazoles protective embankments ketone, 1,3- dimethyl -2- imidazoles protective embankment ketone and 1,3- diethyl -2- imidazoles protective embankment ketone, more preferably 1,3- dimethyl -2- imidazoles protective embankment ketone；Described hydramine is preferably in monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyl diethanolamine, dimethylethanolamine and AEEA One or more, the more preferably one or more in monoethanolamine, triethanolamine, diglycolamine and methylethanolamine；One or more of the described protective embankment base glycol list protective embankment base ether preferably in diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, DPE and Dipropylene glycol mono-n-butyl Ether, the more preferably one or more in diethylene glycol monomethyl ether, dipropylene glycol monomethyl ether and Dipropylene glycol mono-n-butyl Ether.
In the present invention, the one or more of described surfactant preferably in polyvinyl alcohol, polyvinyl pyrrole protective embankment ketone and APEO, more preferably polyvinyl pyrrole protective embankment ketone and/or APEO.The number-average molecular weight of described surfactant is preferably 500 20000, and more preferably 1,000 10000.
In the present invention, one or more of the other corrosion inhibiter in addition to boric acid, borate and borate preferably in alcamines, azole, phosphonic acid and polyacrylic corrosion inhibiter.Wherein, one or more of the described corrosion inhibitor of Alcamines preferably in monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyl diethanolamine, dimethylethanolamine and AEEA, the more preferably one or more in monoethanolamine, triethanolamine, diglycolamine and methylethanolamine；Described Azole Corrosion Inhibitors are preferably selected from BTA, methyl benzotriazazole, BTA diethanolamine salt, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2- mercaptobenzoxazoles, dimercaptothiodiazole, 3- amino -1, 2, 4- triazoles, 4- amino -1, 2, 4- triazoles, 3- amino -5- sulfydryls -1, 2, 4- triazoles, 3, 5- diaminostilbenes, 2, 4- triazoles, 4- amino -5- sulfydryls -1, 2, 4- triazoles, one or more in 5- amino-tetrazole and i_ phenyl-5-mercapto tetrazole, more preferably it is selected from BTA, methyl benzotriazazole, BTA diethanolamine salt, 3- amino -1, 2, 4- triazoles, 4- amino -1, 2, 4- triazoles, 3- amino -5- sulfydryls -1, 2, one or more in 4- triazoles and 5- amino-tetrazole；Described phosphonic acid corrosion inhibiter is preferably selected from one kind in 1- hydroxy ethylene-U- di 2 ethylhexyl phosphonic acids, ATMP, 2- phosphonic acids fourth protective embankments -1,2,4- tricarboxylic acids, ethylenediamine tetramethylene phosphonic acid and diethylenetriamine penta Or a variety of, the one or more more preferably in 2- phosphonobutanes -1,2,4- tricarboxylic acids, ethylenediamine tetramethylene phosphonic acid and diethylenetriamine penta.
In the present invention, described polyacrylic corrosion inhibiter is preferably selected from acrylate copolymer and its copolymer, methacrylate polymer and its copolymer, the alcohol amine salt of acrylate copolymer, the alcohol amine salt of methacrylate polymer, polyoxyethylene-modified acrylate copolymer and its ester and alcohol ammonium salt, and the one or more in polyoxyethylene-modified methacrylate polymer and its ester and alcohol ammonium salt, more preferably it is selected from acrylate copolymer or its copolymer, the alcohol amine salt of acrylate copolymer, polyoxyethylene-modified acrylate copolymer and its alcohol ammonium salt, and the one or more in polyoxyethylene-modified methacrylate polymer and its alcohol ammonium salt.The number-average molecular weight of described polyacrylic corrosion inhibiter is preferably 500 100000, and more preferably 1000 ~ 50000.Described polyacrylic corrosion inhibiter goes out extremely strong inhibitory action to the Corrosion behavior of metal such as aluminium.
Agents useful for same and raw material of the present invention are commercially available.
The photoresist cleansing composition of the present invention is simply mixed by component described above can be prepared by.The photoresist cleansing composition of the present invention can be used within the scope of wider temperature（Between 20 ~ 85）.Cleaning method can refer to following steps：By in the semiconductor wafer immersion cleansing composition containing photoresist, constant temperature oscillator slowly vibrating is utilized under 20 85 °C, is dried up after then being washed through deionized water with high pure nitrogen.
Compared to prior art, beneficial effects of the present invention are as follows：
(1) photoresist and other etch residues for the 20 μ π above thickness that photoresist cleansing composition of the invention can be cleaned relatively quickly on the base materials such as metal, metal alloy or dielectric.
(2) the protective embankment base glycol aryl ether that photoresist cleansing composition of the invention contains can improve solubility of the quaternary ammonium hydroxide in dimethyl sulfoxide (DMSO).The increase of quaternary ammonium hydroxide solubility is conducive to carrying Cleansing power of the photoresist cleansing composition to photoresist especially thick film photolithography glue in the high present invention.
(3) the protective embankment base glycol aryl ether contained in photoresist cleansing composition of the invention and the corrosion inhibiter selected from boric acid, borate and borate can be in wafer patterns and substrate surface formation layer protecting film; the attack to wafer pattern and base material such as halogen atom, hydroxide ion is prevented, so as to reduce the corrosion of wafer pattern and base material；Especially its corrosion inhibiter selected from boric acid, borate and borate contained goes out good inhibitory action to the Corrosion behavior of metal such as aluminium.So it shows extremely weak corrosivity to nonmetallic materials such as the metals such as aluminium and copper and silica.
(4) photoresist cleansing composition of the invention can remove the thick film negative photoresist of the high-crosslinking-degree on semiconductor wafer by way of dissolving, deposition or adhesion of the photoresist in wafer surface are avoided, and does not result in the corrosion or damage of wafer pattern.
(5) photoresist cleansing composition of the invention can be within the scope of wider temperature（ 20-85.C) use.The content of the invention
The present invention is further illustrated below by the mode of embodiment, but is not therefore limited the present invention among described scope of embodiments.In following embodiments, percentage is mass percent.
Embodiment 1 ~ 26
Table 1 gives the formula of the photoetching gluing cleaning agent embodiment 1 26 of the present invention, by listed component and its content in table 1, and uniform, i.e., obtained each cleaning agent is simply mixed.
Photoresist embodiment 1 ~ 26 of the present invention
Quaternary ammonium hydroxide protective embankment base glycol aryl ether diformazan boric acid, borate or ffl acid esters are other
Real water base Asia
Apply the specific sulfone concrete content of specific m. contents specific
Example material wt% wt% material wt% a M material wt% material Wt% wt% Tetramethyl hydroxide propane diols list benzene
0.5 0.5 0.99 98 boric acid 0.01 11 cut with scissors base ether
Tetraethyl hydroxide Isopropanediol list
11 7.9 90 phenyl boric acids 0.1 11 cut with scissors phenyl evil spirit
Tetrapropyl hydroxide diethylene glycol list
(number-average molecular weight is the diethyl sulfoxide 50 of 1.5 5 0.5 42.5 2- methylphenylboronic acids 0.5 hinge phenyl tetrabutylammonium hydroxide DPG list polyvinyl alcohol
22 10 85.75 3- methylphenylboronic acids 0.2 0.05 cut with scissors phenyl ether 500)
4- methylphenylboronic acids 3
The polyoxyethylene-modified poly- methyl-prop of benzyl trimethyl hydrogen di-isopropylene glycol
10 15 30 30 5
Single phenyl ether boric acid 1
Amine-oxides olefin(e) acid (number-average molecular weight is 10000)
Boric acid ethanolamine salt 6
2,3- dimethyl benzene boron first ethyl-sulfoxide 30
1
The tetramethyl hydroxide triethylene glycol list of triethylenetetraminehexaacetic acid hydramine 4
55 20 30 polyvinyl pyrrole protective embankment ketone (the equal ammonium phenyl ether of molecule 3 of number
20000) amount of 4- ethyls phenyl boric acid 1 is
The tetrabutylammonium hydroxide tripropylene glycol list of 5 monoethanolamine of methyl benzotriazazole 0.5 BTA, 0.5 methyl sulfone 30
(number-average molecular weight is the APEO of 2.2 78 42.04 4- propyl group phenyl boric acid 0.75
5 hinge phenyl ffi 10000)
(number-average molecular weight is polyacrylic acid
0.01
500)
Ethyl sulfone 40
4- butyl phenyl boric acid 0.25
The Isopropanediol of 5 tetraethyl hydroxide of diglycolamine three
(number-average molecular weight is 2.5 2.5 5 44.44 polyvinyl alcohol
0.01 ammonium list phenyl ether 2- methoxybenzenes boron 500)
0.25
(number is equal for acid acrylic acid-maleic acid
1500) 0.05 molecular weight is
The condensed ethandiol of tetrapropyl hydroxide six
The ammonium list phenyl ether of 1.5 2 sulfolane 15
3- methoxybenzene boron
The contracting propane diols of 3.5 70.98 0.5 isopropanolamine, 1 benzyl trimethyl hydrogen six acid
1.5 4 polymethylacrylic acid (the single phenyl ether 0.02 of number-average molecular weight oxidation
For 2500) Tetramethyl hydroxide
The ammonium of 2.5 2- imidazoles protective embankments ketone 30
Methyl dies the 4- methoxybenzene boron of 2 six contracting isopropyl of monoethanolamine two
4.5 12 46.45 1
Tetraethyl hydroxide alcohol list phenyl ether acids methacrylic acid-maleic acid
1 0.05 hinges (number-average molecular weight is 1000)
2-mercaptobenzothiazole 0.5
3,4- dimethoxy benzenes
The boric acid of 0.1 1,3- dimethyl -2- imidazolidinones 5
Tetrapropyl hydroxide propane diols list benzyl
The ammonium ether of 33 65 12.5 dimethylethanolamine 10
(number is equal for the polyacrylic acid triethanolamine salt of 2- Carboxybenzeneboronic acids 0.4
20000) 1 molecular weight is
The benzyl trimethyl hydrogen Isopropanediol list of 0.5 1,3- diethyl -2- imidazoles protective embankments ketone of 3- Carboxybenzeneboronic acids 42
The AEEA 8 of 6.5 6 15 18 4- Carboxybenzeneboronic acids 0.5 oxidation hinge benzylic ether
2- methylol benzene boron polymethylacrylic acid monoethanolamine salt
0.5 3 sour (number-average molecular weight is 10000)
Monoethanolamine 20
The tetraethyl hydroxide hexylene glycol list naphthalene 3- methylol benzene boron 2- mercaptobenzoxazoles 0.5 of 2-mercaptobenzimidazole 0.5
0.1 0.2 0.1 78 0.1
Ammonium ether acid
Polyoxyethylene-modified polymethyl methacrylate (number-average molecular weight is 0.5 75000)
The tetrabutylammonium hydroxide propane diols list benzene 4- methylol benzene boron of 3.5 BTA diethanolamine salt of triethanolamine 0.5
7 6 40 40 1.5
The polyoxyethylene-modified polyacrylic acid of ammonium ether acid
1.5 ethyl esters (number-average molecular weight is 50000) diglycolamine 1
2- thienyl boric acids 0.2
1- phenyl -5- mercapto tetrazoles 0.5
The tetramethyl hydroxide DPG list of 3- amino -5- sulfydryl -1,2,4- triazoles 0.1
3.5 4 9 80.5
Cut with scissors phenyl ether
The polyoxyethylene-modified polyacrylic acid of 3 thienylboronic acid 0.2
Monoethanolamine salt (number-average molecular weight is 1 40000) Isopropanolamine 1.5
Naphthalene boronic acids 0.05
The tetrapropyl it of dimercaptothiodiazole 0.30 aoxidizes propane diols list benzyl
(number-average molecular weight is 238 85 APEOs
0.05 ammonium ether boric acid diethanol amine 10000)
0.05
± foretell
(molecular weight is polyvinylpyrrolidone
0.05
20000)
The methyl diethanolamine 5 of Isopropanediol list boric acid 1.5
10
Phenyl ether tetramethyl ylboronic acid cuts with scissors 1 5- amino-benzyl trimethyl hydrogen of tetrazole 1.5
8.5 8 46.5
Oxidation hinge propane diols list phenyl boric acid triethanolamine
The 15 2 polyoxyethylene-modified base ether ± fore-tellings of poly- methyl-prop 1
The tetraethyl ammonium borate 0.3 of olefin(e) acid (number-average molecular weight is 10000) methylethanolamine 7.5
The tetraethyl hydroxide diethylene glycol list of dimercaptothiodiazole 1.2
2.5 10 5 72.8
Cut with scissors the polyoxyethylene-modified polyacrylic acid of phenyl ether
Tetrapropyl boric acid cuts with scissors 0.3 triethanolamine salt, and (number-average molecular weight is 0.4
100000) DPG list tetrabutyl boric acid cuts with scissors 0.2 AEEA 6
5
The polyoxyethylene-modified poly- methyl-prop of phenyl ether trimethylborate 0.2 3- amino-1,2,4-triazols, 2 tetrabutylammonium hydroxides
4.5 5 67.5
Cut with scissors di-isopropylene glycol boric acid isopropanolamine olefin(e) acid diethanolamine salt (the equal molecule 2 of number
5 0.6
Single phenyl ether ± fore-telling amount is 8000) the boric acid diglycolamine diethylene glycol monomethyl ether 30 of dimethylethanolamine 2
0.5
The tetramethyl hydroxide triethylene glycol list of 4- amino-1,2,4-triazols 0.5
23 15 48.69 polymethylacrylic acid monoethanolamine salt cut with scissors phenyl ether 0.01
Ammonium borate 0.2 (number-average molecular weight is 10000)
The tripropylene glycol list isoprene boric acid diethylene glycol monoethyl ether 5 of diglycolamine 0.1
6
The tetrapropyl hydroxide of phenyl ether-ether 1- hydroxy ethylene -1,1- di 2 ethylhexyl phosphonic acids 0.5
2.5 2.5 77
Hinge
The polyoxyethylene-modified polyacrylic acid of three Isopropanediol boric acid methyl diethyls
(number-average molecular weight is 41 0.5 single phenyl ether alcohol amine salt monoethanolamine salt
40000) Propane diols list benzene benzyl trimethyl boron diethylene glycol monobutyl ether 2.4
25 1
Base ether acid cuts with scissors monoethanolamine 20
Boric acid methyl ethanol
The ATMP 0.1 of benzyl trimethyl hydrogen 4
991 amine salt
Amine-oxides DPG list
25 polyoxyethylene-modified poly- methyl-prop phenyl ether duplex catechols
1 olefin(e) acid diethanolamine salt (the equal borate of molecule 2.5 of number
Measure as 8000)
Six condensed ethandiol propylene glycol monobutyl ethers 30
8 pinacol borates 2
Single phenyl ether 2- phosphonic acids fourth protective embankment -1,2, (number-average molecular weight is the tetrabutylammonium hydroxide APEO of 4- tricarboxylic acids 0.05
The ammonium 10000 of 55 41.95 triethyl borate 1 0.5)
Six contracting propane diols
4
Single phenyl ether
The polyoxyethylene-modified poly- methyl-prop 1.5 of butyl borate 1
The dipropylene glycol monomethyl ether 20 of olefin(e) acid (number-average molecular weight is 10000) six contracting isopropyl two
4 phenyl boric acids 0.5
The tetramethyl hydroxide of alcohol list phenyl ether ethylenediamine tetramethylene phosphonic acid 0.2
2 12.5 53 polyoxyethylene-modified ammonium polyacrylate propane diols list benzyls 0.5
4 triproylborate 0.3 (number-average molecular weight is 5000) base ethers
The DPE 15 of methylethanolamine 3
2- Carboxybenzeneboronic acids 0.25
The tetrapropyl hydroxide propane diols list benzene of diethylenetriamine penta 0.2
2.5 2.5 8 70.5 3,5- diaminostilbenes, the ammonium ether of 2,4- triazoles 0.2
Boric acid imidazoline ester 0.25
(number-average molecular weight is APEO
0.6 10000)
Tetraethyl hydroxide Isopropanediol list 4- amino -5- sulfydryls -1, the 2,4- triazole 0.3 of 25 monoethanolamine of dipropylene glycol mono butyl evil spirit 5
33 10 48.2 boric acid ethanolamine salts 5
Ammonium phenyl evil spirit
Polyoxyethylene-modified polyacrylic acid monoethanolamine salt (number-average molecular weight is 0.5 40000)
Beneficial effects of the present invention are further illustrated below by currently preferred effect example.Effect example
Table 2 gives contrast cleaning agent Γ 7, and photoresist cleansing composition embodiment of the invention 27 ~ 42 formula, by listed component and its content in table 2, is simply mixed uniform, i.e., obtained each cleaning agent.
The component of the comparative example cleaning agent Γ of table 2 ~ 7' and photoresist cleansing composition embodiment 27 ~ 42 of the present invention with
Each component in table 2 is proportionally well mixed, comparative example cleaning agent Γ 7, and cleaning agent of the embodiment of the present invention 27 42 is made.Wherein, in addition to having a small amount of granular tetramethyl hydroxide hinge in comparative example cleaning agent 7', comparative example cleaning agent 1,6, and cleaning agent of the embodiment of the present invention 27-42 is the homogeneous phase solution of clear.
By comparative example cleaning agent Γ ~ 6, the semiconductor wafer with three kinds of blank wafers of cleaning agent of the embodiment of the present invention 27 42 pair and containing photoresist is cleaned, and test result is shown in Table 3.
1st, comparative example cleaning agent Γ 6' and cleaning agent of the embodiment of the present invention 27 42 are used to clean blank Cu chips, determine its corrosion condition for Ni metal.Method of testing and condition：4 X 4cm blank Cu chips are immersed in cleaning agent, vibrated 60 minutes using constant temperature oscillator under 20 85 °C, then dried up after being washed through deionized water with high pure nitrogen, the change for determining blank Cu chip etching front and rear surfaces resistance using quadrupole probe machine, which is calculated, to be obtained.As a result it is as shown in table 3.
2nd, comparative example cleaning agent Γ 6' and cleaning agent of the embodiment of the present invention 27 ~ 42 are used to clean blank A1 chips, determine its corrosion condition for metal A1.Method of testing and condition：4 X 4cm blank A1 chips are immersed in cleaning agent, vibrated 60 minutes using constant temperature oscillator under 20 85 °C, then dried up after being washed through deionized water with high pure nitrogen, the change for determining blank A1 chip etching front and rear surfaces resistance using quadrupole probe machine, which is calculated, to be obtained.As a result it is as shown in table 3.
The 3rd, comparative example cleaning agent Γ 6' and cleaning agent of the embodiment of the present invention 27 42 are used for the tetraethoxy-silicane protective embankment for cleaning blank（TEOS) chip, determines its corrosion condition for nonmetallic TEOS.Method of testing and condition：4 X 4cm blank TEOS chips are immersed in cleaning agent, is vibrated 60 minutes, is dried up after then being washed through deionized water with high pure nitrogen using constant temperature oscillator under 20 85 °C.Calculated and obtained using the change of TEOS thickness before and after Nanospec6100 calibrators measure blank TEOS wafer cleanings, as a result as shown in table 3.
4th, by comparative example cleaning agent 1,6, and cleaning agent of the embodiment of the present invention 27 42 is used for the photoresist that cleans on semiconductor wafer.Cleaning method is as follows：Negativity esters of acrylic acid photoresist will be contained（Thickness is about 60 microns, and through overexposure and etching）Semiconductor wafer（Contain pattern）Immerse cleaning agent In, vibrated 1 ~ 30 minute, dried up after then being washed through deionized water with high pure nitrogen using constant temperature oscillator under 20 85 °C.The cleaning performance and cleaning agent of photoresist are to the corrosion condition of wafer pattern as shown in table 3.
The corrosivity and its cleaning situation to negative photoresist of 27 ~ 42 pairs of Ni metals of the 6' of 3 comparative example cleaning agent of table 1 ' and cleaning agent of the embodiment of the present invention and A1 and nonmetallic TEOS
Corrosion condition：◎ no corrosions；Cleaning situation：◎ is removed completely;
O slightly has corrosion；' 〇 is remaining on a small quantity: Δ moderate corrosion;The more remnants of △;
X heavy corrosions.X abundant residues.
By the negativity esters of acrylic acid photoresist containing high-crosslinking-degree（Thickness is about 150 microns, and through overexposure and etching）Semiconductor wafer（Contain pattern）Immerse in the cleaning agent of the embodiment of the present invention 32 ~ 42 shown in table 2, vibrated 10 60 minutes, dried up after then being washed through deionized water with high pure nitrogen using constant temperature oscillator under 40 85 °C.The cleaning performance and cleaning agent of photoresist are as shown in table 4 to the corrosion condition of wafer pattern.
32 42 pairs of negativity esters of acrylic acid photoresists of embodiment cleaning agent in table 2
(thickness is about 150 microns）Cleaning situation
Corrosion condition：◎ no corrosions;Cleaning situation：◎ is removed completely;
O slightly has corrosion；O is remaining on a small quantity;
△ moderate corrosions；The more remnants of Δ;
X heavy corrosions.X abundant residues.
It can be seen that and comparative example cleaning agent Γ 6, compare, 27 ~ 42 pairs of thick film negative esters of acrylic acid photoresists of cleaning agent of the embodiment of the present invention have good cleansing power, use temperature from table 3 and table 4 Spend scope wide, while the corrosivity to Ni metal and A1 and nonmetallic TEOS is low, or damage corrosion-free to wafer pattern.
In summary, the photoresist and other etch residues for the 20 μ η ι above thickness that photoresist cleansing composition of the invention can be cleaned relatively quickly on the base materials such as metal, metal alloy or dielectric.It shows extremely weak corrosivity to nonmetallic materials such as the metals such as aluminium and copper and silica, can't cause the corrosion or damage of wafer pattern, and can be in wider temperature range（20 85 °C) in use.

Claims (14)

  1. Claim
    1st, a kind of photoresist cleansing composition, include quaternary ammonium hydroxide, water, protective embankment base glycol aryl ether, dimethyl sulfoxide (DMSO) and corrosion inhibiter, it is characterized in that, the carbon atom number of alkyl diol is 3 18 in described protective embankment base glycol aryl ether, and described corrosion inhibiter includes the one or more in boric acid, borate and borate.
    2nd, photoresist cleansing composition as claimed in claim 1, characterized in that, one or more of the described quaternary ammonium hydroxide in TMAH, tetraethyl ammonium hydroxide, TPAOH, TBAH and benzyltrimethylammonium hydroxide.
    3rd, photoresist cleansing composition as claimed in claim 1, it is characterised in that the content of described quaternary ammonium hydroxide is 0.1 ~ 10wt%.
    4th, photoresist cleansing composition as claimed in claim 3, it is characterised in that the content of described quaternary ammonium hydroxide is l ~ 5wt%.
    5th, photoresist cleansing composition as claimed in claim 1, it is characterised in that the content of described water is 0.2 15wt%.
    6th, photoresist cleansing composition as claimed in claim 5, it is characterised in that the content of described water is 0.5 ~ 10wt %.
    7, photoresist cleansing composition as claimed in claim 1, it is characterized in that, described protective embankment base glycol aryl ether is selected from propane diols list phenyl ether, Isopropanediol list phenyl ether, diethylene glycol list phenyl ether, DPG list phenyl ether, di-isopropylene glycol list phenyl ether, triethylene glycol list phenyl ether, tripropylene glycol list phenyl ether, three Isopropanediol list phenyl ethers, six condensed ethandiol list phenyl ethers, six contracting propane diols list phenyl ethers, six contracting Isopropanediol list phenyl ethers, propane diols single-benzyl ether, one or more in Isopropanediol single-benzyl ether and hexylene glycol list naphthyl ether.
    8th, photoresist cleansing composition as claimed in claim 1, it is characterised in that the content of described protective embankment base glycol aryl ether is 0.1 65wt%.
    9th, photoresist cleansing composition as claimed in claim 8, it is characterised in that the content of described protective embankment base glycol aryl ether is 0.5 ~ 20.0wt%. 10th, photoresist cleansing composition as claimed in claim 1, it is characterised in that the content of described dimethyl sulfoxide (DMSO) is l 98wt%.
    11st, photoresist cleansing composition as claimed in claim 10, it is characterised in that the content of described dimethyl sulfoxide (DMSO) is 30 90wt%.
    12, photoresist cleansing composition as claimed in claim 1, it is characterised in that described boric acid, borate and borate are selected from boric acid, phenyl boric acid, 2- methylphenylboronic acids, 3- methylphenylboronic acids, 4- methylphenylboronic acids, 2,3- dimethylphenyl boronic acids, 4- ethyl phenyl boric acids, 4- propyl group phenyl boric acids, 4- butyl phenyl boric acids, 2- methoxyphenylboronic acids, 3- methoxyphenylboronic acids, 4- methoxyphenylboronic acids, 3,4- dimethoxyphenylboronics, 2- Carboxybenzeneboronic acids, 3- Carboxybenzeneboronic acids, 4- Carboxybenzeneboronic acids, 2- methylol phenyl boric acids, 3- methylol phenyl boric acids, 4- methylol phenyl boric acids, 2- thienyl boric acids, 3 thienylboronic acid, naphthalene boronic acids, ammonium borate, tetramethyl ammonium borate, tetraethyl ammonium borate, tetrapropyl ammonium borate, tetrabutyl ammonium borate, benzyl trimethyl ammonium borate, boric acid ethanolamine salt, boric acid diethanolamine salt, triethanolamine borate salt, boric acid diethylene glycol (DEG) amine salt, boric acid isopropanol amine salt, boric acid methyl ethanol amine salt, boric acid methyl diethanolamine salt, trimethylborate, triethyl borate, triproylborate, butyl borate, isoprene borate, duplex catechol borate, one or more in pinacol borate and boric acid imidazoline ester.
    13rd, photoresist cleansing composition as claimed in claim 12, characterized in that, the one or more of described boric acid, borate and borate in boric acid, phenyl boric acid, 2- Carboxybenzeneboronic acids, 2- methylols phenyl boric acid, tetramethyl ammonium borate, tetraethyl ammonium borate, boric acid ethanolamine salt, triethanolamine borate salt, boric acid diethylene glycol (DEG) amine salt and duplex catechol borate.
    14th, photoresist cleansing composition as claimed in claim 1, it is characterised in that the total content of described boric acid, borate and borate is 0.01 ~ 10wt%.
    15th, photoresist cleansing composition as claimed in claim 14, it is characterised in that the total content of described boric acid, borate and borate is 0.1 5wt%.
    16th, photoresist cleansing composition as claimed in claim 1, characterized in that, described photoresist cleansing composition is further containing the one or more in other corrosion inhibiter selected from polarity organic cosolvent, surfactant and in addition to boric acid, borate and borate.
    17th, photoresist cleansing composition as claimed in claim 16, it is characterised in that described Polarity organic cosolvent content is 50wt%, but does not include 0wt%;Described surface-active contents are 5wt%, but do not include 0wt%;Described other inhibition agent contents in addition to the corrosion inhibiter of boric acid, borate and borate are 5.0wt%, but do not include 0wt%.
    18th, photoresist cleansing composition as claimed in claim 17, it is characterised in that the content of described polarity organic cosolvent is 5 30wt%;Described surface-active contents are 0.05 ~ 3.0wt%;Described other inhibition agent contents in addition to the corrosion inhibiter of boric acid, borate and borate are 0.05 3.0wt%.
    19th, photoresist cleansing composition as claimed in claim 16, it is characterised in that one or more of the described polarity organic cosolvent in sulfoxide, sulfone, imidazolidinone, hydramine and protective embankment base glycol monoalkyl ether.
    20th, photoresist cleansing composition as claimed in claim 19, it is characterised in that described sulfoxide is diethyl sulfoxide and/or first ethyl-sulfoxide；One or more of the described sulfone in methyl sulfone, ethyl sulfone and sulfolane；Described imidazolidinone is selected from the one or more in 2- imidazoles protective embankments ketone, 1,3- dimethyl -2- imidazoles protective embankment ketone and 1,3- diethyl -2- imidazolidinones；One or more of the described hydramine in monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyl diethanolamine, dimethylethanolamine and AEEA；One or more of the described alkyl diol list protective embankment base ether in diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, DPE and Dipropylene glycol mono-n-butyl Ether.
    21st, photoresist cleansing composition as claimed in claim 16, it is characterised in that one or more of the described surfactant in polyvinyl alcohol, polyvinyl pyrrole protective embankment ketone and APEO.
    22nd, photoresist cleansing composition as claimed in claim 16, it is characterised in that the number-average molecular weight of described surfactant is 500 ~ 20000.
    23rd, photoresist cleansing composition as claimed in claim 22, it is characterised in that the number-average molecular weight of described surfactant is 1,000 10000.
    24th, photoresist cleansing composition as claimed in claim 16, characterized in that, one or more of the other corrosion inhibiter in addition to boric acid, borate and borate in alcamines, azole, phosphonic acid and polyacrylic corrosion inhibiter. 25th, photoresist cleansing composition as claimed in claim 24, characterized in that, one or more of the described corrosion inhibitor of Alcamines in monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyl diethanolamine, dimethylethanolamine and AEEA；Described Azole Corrosion Inhibitors are selected from BTA, methyl benzotriazazole, BTA diethanolamine salt, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2- mercaptobenzoxazoles, dimercaptothiodiazole, 3- amino -1,2,4- triazoles, 4- amino -1,2,4- triazoles, 3- amino -5- sulfydryls -1,2,4- triazoles, 3,5- diaminostilbenes, 2, one or more in 4- triazoles, 4- amino -5- sulfydryls -1,2,4- triazoles, 5- amino-tetrazole and 1- phenyl -5- mercapto tetrazoles；One or more of the described phosphonic acid corrosion inhibiter in 1- hydroxy ethylene -1,1- di 2 ethylhexyl phosphonic acids, ATMP, 2- phosphonic acids fourth protective embankment -1,2,4- tricarboxylic acids, ethylenediamine tetramethylene phosphonic acid and diethylenetriamine penta；One or more of the described polyacrylic corrosion inhibiter in acrylate copolymer and its copolymer, methacrylate polymer and its copolymer, the alcohol amine salt of acrylate copolymer, the alcohol amine salt of methacrylate polymer, polyoxyethylene-modified acrylate copolymer and its ester and alcohol ammonium salt and polyoxyethylene-modified methacrylate polymer and its ester and alcohol ammonium salt.
    26th, photoresist cleansing composition as claimed in claim 24, it is characterised in that the number-average molecular weight of described polyacrylic corrosion inhibiter is 500 ~ 100000.
    27th, photoresist cleansing composition as claimed in claim 26, it is characterised in that the number-average molecular weight of described polyacrylic corrosion inhibiter is 1,000 50000.
CN2009801483637A 2008-11-28 2009-11-19 Detergent combination for removing photoresist Pending CN102227689A (en)

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