CN102222652B - 具有接线端元件的功率半导体模块 - Google Patents

具有接线端元件的功率半导体模块 Download PDF

Info

Publication number
CN102222652B
CN102222652B CN201110097525.8A CN201110097525A CN102222652B CN 102222652 B CN102222652 B CN 102222652B CN 201110097525 A CN201110097525 A CN 201110097525A CN 102222652 B CN102222652 B CN 102222652B
Authority
CN
China
Prior art keywords
terminal element
contact
segment
power semiconductor
semiconductor modular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110097525.8A
Other languages
English (en)
Other versions
CN102222652A (zh
Inventor
雷纳尔·波浦
马可·莱德雷尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron Electronics Co ltd
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron Electronics Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Electronics Co ltd filed Critical Semikron Electronics Co ltd
Publication of CN102222652A publication Critical patent/CN102222652A/zh
Application granted granted Critical
Publication of CN102222652B publication Critical patent/CN102222652B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50Fixed connections
    • H01R12/51Fixed connections for rigid printed circuits or like structures
    • H01R12/55Fixed connections for rigid printed circuits or like structures characterised by the terminals
    • H01R12/57Fixed connections for rigid printed circuits or like structures characterised by the terminals surface mounting terminals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02Contact members
    • H01R13/22Contacts for co-operating by abutting
    • H01R13/24Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2407Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
    • H01R13/2421Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means using coil springs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4846Connecting portions with multiple bonds on the same bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50Fixed connections
    • H01R12/51Fixed connections for rigid printed circuits or like structures
    • H01R12/52Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Power Conversion In General (AREA)

Abstract

本发明涉及一种具有接线端元件的功率半导体模块,具有至少一个衬底、依据电路设置的迹线、壳体和至少一个第一接线端元件和至少一个第二接线端元件。接线端元件各自具有第一接触段、第二接触段和弹性段。为紧凑设置和避免电磁感应,依据本发明设计:第二接线端元件的弹性段构成为螺旋弹簧并至少部分围住第一接线端元件。

Description

具有接线端元件的功率半导体模块
技术领域
本发明涉及一种功率半导体模块,具有多个特别是用于控制接线端、负载接线端和辅助接线端的接线端元件,用于从衬底伸向外面的导电连接。例如由DE 10 2005 058 692 A1所公开的功率半导体模块形成本发明的出发点。
背景技术
这种类型的功率半导体模块按照现有技术由壳体带有至少一个设置给它的底板以及设置在底板上的衬底组成。公知的功率半导体模块此外具有用于外部负载接线端和辅助接线端的接线端元件以及设置在内部的连接件。衬底上设置有用作为接线端元件的接触面的迹线。用于功率半导体模块的内部依据电路连接的连接件大多构成为引线键合连接件。此外公开了一种壳体,其具有多个作为接线端元件保持装置的间隙。
EP 1 391 966 A1公开了一种具有接线端元件构造的功率半导体模块,这些接线端元件各自形成与功率半导体元件和外部接线端部位的触点。接线端元件具有两个接触装置以及一个弹性段。弹性段最好螺旋形构成并因此形成用于接线端元件的动态和可逆接触性能的压缩区。
公知的设计的缺点是上述接线端元件在壳体内的设置。这些接线端元件彼此相距设置在壳体内,由此产生相应的侧向位置需求以与衬底触点接触。事实证明这会存在问题,当衬底上存在的空间一方面由引线键合连接件占据,另一方面主要由功率半导体元件占据。所述接线端元件的另一个缺点来自于其弹性段,如果该弹性段如从机械的角度出发优选构成为螺旋弹簧那样构成。如果螺旋弹簧由变化的电流通流,那么从物理上它被看成线圈。这种电流流动由于感应导致干扰的电流分布并因此可能导致对信号传输产生不利影响。接线端元件所介绍的实施方式的另一缺点是,在触点失灵的情况下,功率半导体模块的继续运行可能不复存在。
发明内容
本发明的目的在于,提供一种具有多个接线端元件的功率半导体模块,所述接线端元件可以使功率半导体模块紧凑构成、在电流流动变化的情况下减少电感的影响或者可以紧凑设计接线端元件的冗余实施方式。
本发明的思路从一种上述类型的功率半导体模块出发,最好具有底板和壳体,该壳体围住一个或者多个衬底。但依据本发明的设计在无底板的功率半导体模块上同样是具有优点的。衬底从它那方面由具有多个处于其第一主面上彼此绝缘的金属迹线的绝缘体以及最好由设置在其第二主面上的平面的金属层组成。此外,接下来衬底具有纳入其下的设置在迹线上的功率半导体元件。因此概念“衬底的接触面”也包括功率半导体元件的接触面。
依据本发明的功率半导体模块包括至少两个接线端元件,接线端元件各自具有与衬底的导电接触,其中,第一接线端元件至少部分由第二接线端元件围住。接线端元件从它们那方面各自具有用于与衬底并在那里与迹线或者与功率半导体元件的接触面触点接触的第一接触段,用于外部连接的第二接触段以及设置在第一接触段和第二接触段之间的弹性段。第二接线端元件的弹性段和最好还有第一接线端元件的那个弹性段在这种情况下构成为螺旋弹簧。此外,优选第一接线端元件与第二接线端元件同心设置。但偏心设置在一定的使用情况下同样有意义。
通过借助两个接线端元件的构成,可以冗余构成唯一的控制接线端、负载接线端或者辅助接线端。为此第一和第二接线端元件与衬底的相同电位连接。在这种冗余实施方式中,因此在一个接线端元件的触点失灵或者其他失灵的情况下,第二接线端元件能够独自承担其功能并避免功率半导体模块失灵。
各个接线端元件的第一和第二接触段最好销子状构成。同样优选第二接触段从壳体中伸出。第一接触段设置给衬底并在向接线端元件施加压力时与其导电连接。此外,第一接线端元件的接触段与其弹性段同心设置。相反,第二接线端元件的两个接触段最好与弹性段的匝圈正切或者近似正切设置。
壳体用作为接线端元件的保持装置并为此具有各自分配给接线端元件的间隙。最好存在第一圆柱体状和第二空心圆柱体状的间隙,其中,第一间隙可与第二间隙同心或者偏心设置。第一接线端元件设置在第一间隙内且第二接线端元件设置在第二间隙内。两个间隙最好借助绝缘套管电气和机械上彼此分开,所述绝缘套管是壳体的部分。
总之,本发明提供了一种功率半导体模块,具有壳体,
具有至少一个衬底、在所述衬底上依据电路设置的迹线和至少一个功率半导体元件,具有至少一个第一接线端元件和至少一个第二接线端元件,其中,所述第一接线端元件用作为栅极接线端且所述第二接线端元件用作为辅助接线端,所述第一接线端元件和所述第二接线端元件各自具有第一接触段、第二接触段和设置在所述第一接触段和所述第二接触段之间的弹性段,
其中,所述第一接线端元件的所述第二接触段具有与所述衬底的第一迹线的导电接触,所述第二接线端元件的所述第二接触段具有与所述衬底的第二迹线的导电接触,其中
所述壳体为设置所述接线端元件而具有间隙,以及
其中,所述第二接线端元件的所述弹性段构成为螺旋弹簧并至少部分围住所述第一接线端元件。
优选地,所述第一接线端元件与所述第二接线端元件同心或者偏心设置。
优选地,所述第一接线端元件的和所述第二接线端元件的所述第一接触段从所述功率半导体模块的所述壳体中伸出。
优选地,印制电路板能以如下方式平行于所述衬底设置,使所述第一接触段能与所述印制电路板导电连接,并且通过所述印制电路板的这种设置向所述接线端元件施加压力。
优选地,所述第一接线端元件设置在所述壳体的圆柱体状的第一间隙内,且所述第二接线端元件设置在所述壳体的空心圆柱体状的第二间隙内。
优选地,所述壳体的所述第一间隙与所述壳体的所述第二间隙同心设置。
优选地,两个间隙借助绝缘套管彼此分开。
优选地,各个接线端元件的所述第一接触段和所述第二接触段销子状构成。
优选地,所述第一接线端元件的所述第一接触段和所述第二接触段与所述弹性段同心设置。
优选地,所述第二接线端元件的所述接触段与所述弹性段的匝圈正切或者近似正切设置。
附图说明
现借助图1至图4的实施例对本发明的解决方案进行详细说明。其中:
图1示意示出依据本发明的功率半导体模块的剖面。
图2以三维视图示出依据本发明的第一功率半导体模块两个接线端元件。
图3示出根据图2的设计的剖面。
图4示出依据本发明的第二功率半导体模块的两个接线端元件。
具体实施方式
图1示意示出依据本发明的功率半导体模块10,其具有底板20及设置在底板上的衬底30。各个衬底30由具有多个处于其第一主面上彼此绝缘的金属迹线38的绝缘体34以及最好由设置在其第二主面上的平面金属层36组成。此外,在这里衬底30具有设置在迹线38上的功率半导体元件32。这些功率半导体元件借助引线键合连接件90与迹线38连接。
此外示出围住多个衬底30的壳体50。壳体50此外具有多个间隙56、58,用于使接线端元件70、80引导穿过以进行外部连接,例如与印制电路板连接(参见图3)。两个接线端元件在这里与衬底的相同接触面触点接触,由此产生栅极接线端的冗余构造或者辅助接线端的冗余构造。
在功率半导体模块10的另外的设计中,例如没有底板和/或者仅具有一个衬底,接线端元件的所述构造不言而喻同样证明是具有优点的。
图2示意示出原则上与图1所示结构相同的依据本发明的功率半导体模块10的第一和第二接线端元件70、80,但其中,在这里第一接线端元件70用作为栅极接线端且第二接线端元件80用作为辅助接线端。接线端元件70、80各具有第一接触段76、86、第二接触段72、82和设置在其间的弹性段74、84。接线端元件70、80的弹性段74、84螺旋形构成。因此保证动态和可逆运动并由此在施加压力时确保接触段与其连接对可靠接触。依据本发明,第二接线端元件80的弹性段84在这里近似完全地围住第一接线端元件70的弹性段74。第一接线端元件70与第二接线端元件80同心设置。第一接触段76、86和第二接触段72、82各自销子状构成。此外示出衬底30及设置在衬底上的迹线38,接线端元件70、80设置给迹线。第一接线端元件70利用其第二接触段72与第一迹线,与栅极电位连接,而第二接线端元件80利用其第二接触段82与第二迹线,与辅助电位连接。
图3以部分视图示出按图2的依据本发明的功率半导体模块设计的剖面,其中,附加示出壳体50的一部分,该壳体为了设置接线端元件70、80而具有各一个间隙。第一间隙56圆柱状构成并用于第一接线端元件70。第二间隙58空心圆柱状构成且第二接线端元件80设置在这里面。第一间隙56与第二间隙58同心地布置且两个间隙56、58借助绝缘套管54彼此分开,该绝缘套管具有优点地由壳体本身构成。绝缘套管54防止两个接线端元件70、80机械和电气上接触,从而避免短路并因此避免功率半导体模块的可能的损坏。
第一接线端元件70的接触段72、76与弹性段74同心设置。相反,第二接线端元件80的两个接触段82、86与其弹性段的匝圈正切或者近似正切分布。
此外示出印制电路板60,其平行于衬底30可以设置在功率半导体模块的外部,或者在一定的使用情况下也可以设置在功率半导体模块的内部,并且接线端元件70、80的第一接触段76、86分配给所述印制电路板。接线端元件70、80的第一接触段76、86在这里平面状构成,从而与印制电路板存在平面接触。印制电路板60能以如下方式平行于衬底30设置,使第一接触段76、86能与印制电路板导电连接,并且通过印制电路板的这种设置向接线端元件70、80施加压力。
图4以部分视图示出依据本发明的功率半导体模块第二设计及接线端元件和壳体的剖面。第一接线端元件70具有第一接触段76、第二接触段72和弹性段74,其中,弹性段74构成为金属带并借助对向的双重弯曲与第一和第二接触段72、76连接。第二接线端元件80构成为螺旋弹簧并具有第一接触段86、第二接触段82和弹性段84。第二接线端元件80的弹性段84至少部分围住第一接线端元件的弹性段74。
附图标记列表
10      功率半导体模块
20      底板
70、80  接线端元件
76、86  第一接触段
72、82  第二接触段
74、84  弹性段
30      衬底
32      功率半导体元件
34      绝缘体
36      金属层
38      迹线
50      壳体
56、58  间隙
54      绝缘套管
60      印制电路板
90      引线键合连接件

Claims (10)

1.功率半导体模块,具有壳体(50),
具有至少一个衬底(30)、在所述衬底上依据电路设置的迹线(38)和至少一个功率半导体元件(32),具有至少一个第一接线端元件(70)和至少一个第二接线端元件(80),其中,所述第一接线端元件用作为栅极接线端且所述第二接线端元件用作为辅助接线端,所述第一接线端元件和所述第二接线端元件各自具有第一接触段(76、86)、第二接触段(72、82)和设置在所述第一接触段和所述第二接触段之间的弹性段(74、84),
其中,所述第一接线端元件(70)的所述第二接触段(72)具有与所述衬底(30)的第一迹线的导电接触,所述第二接线端元件(80)的所述第二接触段(82)具有与所述衬底(30)的第二迹线的导电接触,其中
所述壳体(50)为设置所述接线端元件(70、80)而具有间隙(56、58),以及
其中,所述第二接线端元件(80)的所述弹性段(84)构成为螺旋弹簧并至少部分围住所述第一接线端元件(70)。
2.按权利要求1所述的功率半导体模块,其中,所述第一接线端元件(70)与所述第二接线端元件(80)同心或者偏心设置。
3.按权利要求1所述的功率半导体模块,其中,所述第一接线端元件(70)的和所述第二接线端元件(80)的所述第一接触段(76、86)从所述功率半导体模块的所述壳体(50)中伸出。
4.按权利要求1所述的功率半导体模块,其中,印制电路板(60)能以如下方式平行于所述衬底(30)设置,使所述第一接触段(76、86)能与所述印制电路板导电连接,并且通过所述印制电路板的这种设置向所述接线端元件(70、80)施加压力。
5.按权利要求1所述的功率半导体模块,其中,所述第一接线端元件(70)设置在所述壳体(50)的圆柱体状的第一间隙(56)内,且所述第二接线端元件(80)设置在所述壳体(50)的空心圆柱体状的第二间隙(58)内。
6.按权利要求5所述的功率半导体模块,其中,所述壳体(50)的所述第一间隙(56)与所述壳体(50)的所述第二间隙(68)同心设置。
7.按权利要求5或6所述的功率半导体模块,其中,两个间隙(56、58)借助绝缘套管(54)彼此分开。
8.按权利要求1所述的功率半导体模块,其中,各个接线端元件(70、80)的所述第一接触段(72、82)和所述第二接触段(76、86)销子状构成。
9.按权利要求1所述的功率半导体模块,其中,所述第一接线端元件(70)的所述第一接触段(72)和所述第二接触段(76)与所述弹性段(74)同心设置。
10.按权利要求1所述的功率半导体模块,其中,所述第二接线端元件(80)的所述接触段(82、86)与所述弹性段(74)的匝圈正切或者近似正切设置。
CN201110097525.8A 2010-04-14 2011-04-14 具有接线端元件的功率半导体模块 Expired - Fee Related CN102222652B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010014940.3 2010-04-14
DE102010014940A DE102010014940B4 (de) 2010-04-14 2010-04-14 Leistungshalbleitermodul mit Anschlusselementen

Publications (2)

Publication Number Publication Date
CN102222652A CN102222652A (zh) 2011-10-19
CN102222652B true CN102222652B (zh) 2015-07-22

Family

ID=44246312

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110097525.8A Expired - Fee Related CN102222652B (zh) 2010-04-14 2011-04-14 具有接线端元件的功率半导体模块

Country Status (4)

Country Link
EP (1) EP2378552B1 (zh)
KR (1) KR20110115080A (zh)
CN (1) CN102222652B (zh)
DE (1) DE102010014940B4 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101443980B1 (ko) * 2012-11-27 2014-09-23 삼성전기주식회사 접속핀 및 이를 갖는 전력 모듈 패키지
CN104538342B (zh) * 2014-12-04 2018-01-09 株洲南车时代电气股份有限公司 用于夹持半导体器件的装置
DE102016107083B4 (de) * 2016-04-18 2019-05-23 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Anordnung und Fahrzeug hiermit
DE102016115572B4 (de) * 2016-08-23 2019-06-13 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtungssystem mit einer ersten und einer zweiten Leistungshalbleitereinrichtung
DE102017117665B4 (de) * 2017-08-03 2020-04-30 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem eine bauliche Einheit bildenden elektrischen Verbindungselement und mit einem elektrischen ersten Bauelement
EP3500075B1 (de) * 2017-12-14 2019-11-20 Siemens Aktiengesellschaft Kommunikationsmodul für ein kommunikations- oder automatisierungsgerät
US10270193B1 (en) * 2017-12-18 2019-04-23 Continental Automotive Systems, Inc. Concentric springs for sensor connection

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1180932A (zh) * 1996-10-25 1998-05-06 国际商业机器公司 同轴互连器件及其制造方法
EP1601016A2 (de) * 2004-05-25 2005-11-30 Semikron Elektronik GmbH & Co. KG Patentabteilung Anordnung in Schraub-Druckkontakierung mit einem Leistungshalbleitermodul
EP2056654A1 (de) * 2007-11-02 2009-05-06 Cinterion Wireless Modules GmbH Leiterplatte mit Kontaktfläche und Anordnung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004504703A (ja) * 2000-07-13 2004-02-12 リカ エレクトロニクス インターナショナル インコーポレイテッド 試験機器に特に有用な接点器具
EP1391966A1 (de) * 2002-08-19 2004-02-25 ABB Schweiz AG Druckkontaktfeder und Anwendung in Leistungshalbleitermodul
US7113408B2 (en) * 2003-06-11 2006-09-26 Neoconix, Inc. Contact grid array formed on a printed circuit board
US20060135045A1 (en) 2004-12-17 2006-06-22 Jinru Bian Polishing compositions for reducing erosion in semiconductor wafers
DE102004061936A1 (de) * 2004-12-22 2006-07-06 Siemens Ag Anordnung eines Halbleitermoduls und einer elektrischen Verschienung
KR101025027B1 (ko) * 2008-08-20 2011-03-25 주식회사 아이에스시테크놀러지 이중 스프링 및 그를 포함한 테스트 소켓

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1180932A (zh) * 1996-10-25 1998-05-06 国际商业机器公司 同轴互连器件及其制造方法
EP1601016A2 (de) * 2004-05-25 2005-11-30 Semikron Elektronik GmbH & Co. KG Patentabteilung Anordnung in Schraub-Druckkontakierung mit einem Leistungshalbleitermodul
EP2056654A1 (de) * 2007-11-02 2009-05-06 Cinterion Wireless Modules GmbH Leiterplatte mit Kontaktfläche und Anordnung

Also Published As

Publication number Publication date
CN102222652A (zh) 2011-10-19
EP2378552B1 (de) 2015-09-16
DE102010014940A1 (de) 2011-10-20
KR20110115080A (ko) 2011-10-20
DE102010014940B4 (de) 2013-12-19
EP2378552A1 (de) 2011-10-19

Similar Documents

Publication Publication Date Title
CN102222652B (zh) 具有接线端元件的功率半导体模块
US10694619B2 (en) Filter comprising printed circuit board and busbars
US8552824B1 (en) Integrated planar electromechanical contactors
CN101364679B (zh) 电连接组件
CN101330164B (zh) 电子设备
CN101996968B (zh) 带电路载体和负载连接件的功率半导体模块及其制造方法
CN102823061B (zh) 无线电开关
CN105957712A (zh) 用于多电压的分裂式薄膜电容器
CN105900296B (zh) 用于导通一定数目个电气信号的导通电桥
CN101924044B (zh) 制造大功率半导体模块的方法和大功率半导体模块
US8628349B2 (en) Flexible printed circuit board connector
CN102446866A (zh) 带有基础模块和连接模块的功率半导体模块
JP2018133846A (ja) 電池監視装置
CN210113743U (zh) 用于控制功率半导体装置的电路配置和具有该配置的构置
CN101740554A (zh) 具有控制功能和集成的变换器的功率半导体模块
CN108010891B (zh) 功率半导体模块
US20140335705A1 (en) Electrical connector
JP2015520492A (ja) 電力部品などの電気部品の相互接続のための電気回路
CN103839667B (zh) 一种平面高压变压器
CN101978455A (zh) 电流互感器组件和机电开关设备
CN111448636B (zh) 集成机电装置
CN209217242U (zh) 电源供应单元和电源连接器组件
KR102029363B1 (ko) 정션블록
CN113766790B (zh) 供电分配单元及数据中心的机柜
KR20120067654A (ko) 인쇄회로기판 연결용 커넥터 및 이를 포함하는 전자기기

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150722

Termination date: 20190414

CF01 Termination of patent right due to non-payment of annual fee