CN102222598A - 衬底处理装置 - Google Patents
衬底处理装置 Download PDFInfo
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- CN102222598A CN102222598A CN2010101509951A CN201010150995A CN102222598A CN 102222598 A CN102222598 A CN 102222598A CN 2010101509951 A CN2010101509951 A CN 2010101509951A CN 201010150995 A CN201010150995 A CN 201010150995A CN 102222598 A CN102222598 A CN 102222598A
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010150995.1A CN102222598B (zh) | 2010-04-19 | 2010-04-19 | 衬底处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010150995.1A CN102222598B (zh) | 2010-04-19 | 2010-04-19 | 衬底处理装置 |
Publications (2)
Publication Number | Publication Date |
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CN102222598A true CN102222598A (zh) | 2011-10-19 |
CN102222598B CN102222598B (zh) | 2015-04-08 |
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CN201010150995.1A Expired - Fee Related CN102222598B (zh) | 2010-04-19 | 2010-04-19 | 衬底处理装置 |
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CN (1) | CN102222598B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206385A (zh) * | 2016-09-27 | 2016-12-07 | 上海华力微电子有限公司 | 一种降低腔体内金属污染含量的多晶硅刻蚀腔及方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327612A (zh) * | 1999-09-23 | 2001-12-19 | 兰姆研究公司 | 具有平铺式瓷衬的半导体加工设备 |
US20020011216A1 (en) * | 1999-06-04 | 2002-01-31 | Tue Nguyen | Integral susceptor-wall reactor system and method |
JP2003224079A (ja) * | 2002-01-31 | 2003-08-08 | Shin Etsu Handotai Co Ltd | 熱処理方法、熱処理装置およびシリコンエピタキシャルウェーハの製造方法 |
CN1483218A (zh) * | 2000-12-29 | 2004-03-17 | 应用材料有限公司 | 用于均匀加热衬底的腔室 |
CN1488165A (zh) * | 2001-01-25 | 2004-04-07 | ���������ƴ���ʽ���� | 热处理方法和热处理装置 |
CN1585832A (zh) * | 2001-04-12 | 2005-02-23 | 马特森技术公司 | 用于在半导体衬底上外延淀积膜的系统和方法 |
-
2010
- 2010-04-19 CN CN201010150995.1A patent/CN102222598B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020011216A1 (en) * | 1999-06-04 | 2002-01-31 | Tue Nguyen | Integral susceptor-wall reactor system and method |
CN1327612A (zh) * | 1999-09-23 | 2001-12-19 | 兰姆研究公司 | 具有平铺式瓷衬的半导体加工设备 |
CN1483218A (zh) * | 2000-12-29 | 2004-03-17 | 应用材料有限公司 | 用于均匀加热衬底的腔室 |
CN1488165A (zh) * | 2001-01-25 | 2004-04-07 | ���������ƴ���ʽ���� | 热处理方法和热处理装置 |
CN1585832A (zh) * | 2001-04-12 | 2005-02-23 | 马特森技术公司 | 用于在半导体衬底上外延淀积膜的系统和方法 |
JP2003224079A (ja) * | 2002-01-31 | 2003-08-08 | Shin Etsu Handotai Co Ltd | 熱処理方法、熱処理装置およびシリコンエピタキシャルウェーハの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206385A (zh) * | 2016-09-27 | 2016-12-07 | 上海华力微电子有限公司 | 一种降低腔体内金属污染含量的多晶硅刻蚀腔及方法 |
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CN102222598B (zh) | 2015-04-08 |
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C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Gyeonggi Do, South Korea Applicant after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do, South Korea Applicant before: IPS Co.,Ltd. |
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COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: INTEGRATED PROCESS SYSTEMS LTD. TO: WONIK IPS CO., LTD. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee after: Lap Yi Cmi Holdings Ltd. Address before: Gyeonggi Do, South Korea Patentee before: WONIK IPS Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20160728 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee before: Lap Yi Cmi Holdings Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150408 Termination date: 20190419 |