CN102222477A - Grid driving method, grid driving circuit and pixel structure - Google Patents

Grid driving method, grid driving circuit and pixel structure Download PDF

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Publication number
CN102222477A
CN102222477A CN2010101521864A CN201010152186A CN102222477A CN 102222477 A CN102222477 A CN 102222477A CN 2010101521864 A CN2010101521864 A CN 2010101521864A CN 201010152186 A CN201010152186 A CN 201010152186A CN 102222477 A CN102222477 A CN 102222477A
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grid
pixel
driving voltage
switching device
signal
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CN102222477B (en
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马占洁
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Abstract

The invention relates to a grid driving method, a grid driving circuit and a pixel structure. The grid driving method comprises the following steps of: loading first grid driving voltage on the grid of the pixel of which the data driving voltage is a positive-polarity signal, and loading second grid driving voltage on the grid of the pixel of which the data driving voltage is a negative-polarity signal, wherein the first grid driving voltage is higher than the second grid driving voltage. In the invention, different grid driving voltage is loaded on the grids of the pixels of the positive-polarity signal and the negative-polarity signal so as to meet charging requirements of the pixel electrodes of the positive-polarity signal and the negative-polarity signal; simultaneously, the lower second grid driving voltage is loaded on the grid of the pixel of the negative-polarity signal so as to effectively solve grid bias problem of a thin-film transistor (TFT) and prolong the service life of the TFT; compared with the prior art, the invention has the advantage that: the consumption power of loading the second grid driving voltage is low, so that the power consumption of a liquid crystal panel is reduced.

Description

Grid drive method, gate driver circuit and dot structure
Technical field
The present invention relates to lcd technology, relate in particular to a kind of grid drive method, gate driver circuit and dot structure.
Background technology
In at present traditional LCD, in order to prevent that liquid crystal is in for a long time under the dc state and catabiosis occurs, the data drive voltage that data line offers pixel electrode is an AC signal, when data drive voltage is higher than public electrode voltages, this data drive voltage is called positive signal, when data drive voltage was lower than public electrode voltages, this data drive voltage was called the negative polarity signal.
In traditional LCD, no matter take which kind of type of drive, thin film transistor (TFT) (Thin FilmTransistor, be called for short: when pixel TFT) is opened, no matter data drive voltage is positive signal or negative polarity signal, and the gate drive voltage that is carried in the TFT grid all is a high-voltage signal.If for a long time on the TFT of the pixel electrode of negative polarity signal, load higher gate drive voltage because the serviceable life that higher TFT grid bias can reduce TFT, cause more early, faster, bigger TFT skew; And, also increased unnecessary liquid crystal panel power consumption.
Summary of the invention
The invention provides a kind of grid drive method, gate driver circuit and dot structure, in order to realize promoting the serviceable life of TFT, the power consumption of saving liquid crystal panel.
The invention provides a kind of grid drive method, comprising:
Be to load the first grid driving voltage on the grid of pixel of positive signal in data drive voltage, be to load the second grid driving voltage on the grid of pixel of negative polarity signal in data drive voltage, described first grid driving voltage is higher than described second grid driving voltage.
The invention provides a kind of gate driver circuit, comprise: loaded circuit, be used on data drive voltage is the grid of pixel of positive signal, loading the first grid driving voltage, and be to load the second grid driving voltage on the grid of pixel of negative polarity signal in data drive voltage;
Described first grid driving voltage is higher than described second grid driving voltage.
The invention provides a kind of dot structure, comprise one-row pixels at least, wherein also comprise: two signal lines that are used to drive described one-row pixels; Described two signal lines are respectively applied for and load first grid driving voltage and second grid driving voltage, and described first grid driving voltage is higher than described second grid driving voltage;
The pixel that it is positive signal that the signal line that wherein loads the first grid driving voltage is used for driving described one-row pixels data drive voltage; The signal line that loads the second grid driving voltage is used for driving described one-row pixels data drive voltage the pixel that is the negative polarity signal.
The present invention loads different gate drive voltages by the grid in the positive signal and the pixel of negative polarity signal, satisfies the charging requirement of the pixel electrode of positive signal or negative polarity signal; Simultaneously, the lower second grid driving voltage of on-load voltage on the grid of the pixel of negative polarity signal, alleviation effectively TFT grid bias problem, prolonged serviceable life of TFT; Compared with prior art, the power that loading second grid driving voltage is consumed is less, the power consumption of having saved liquid crystal panel.
Description of drawings
Fig. 1 is the process flow diagram of grid drive method one embodiment of the present invention;
Fig. 2 is the structural representation of gate driver circuit embodiment two of the present invention;
Fig. 3 is the structural representation of gate driver circuit embodiment three of the present invention;
Fig. 4 is the structural representation of gate driver circuit embodiment four of the present invention;
Fig. 5 is the structural representation of dot structure embodiment one of the present invention;
Fig. 6 is the structural representation of dot structure embodiment two of the present invention.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the process flow diagram of grid drive method one embodiment of the present invention.As shown in Figure 1, present embodiment comprises as the lower part:
101, on being the grid of pixel of positive signal, data drive voltage loads the first grid driving voltage;
102, on being the grid of pixel of negative polarity signal, data drive voltage loads the second grid driving voltage.
Wherein the first grid driving voltage is higher than the second grid driving voltage.
Through discovering, under identical gate drive voltage, the required duration of charging of positive-negative polarity signal can be different, and the duration of charging of positive signal is greater than the negative polarity signal.The grid drive method that present embodiment provides utilizes this achievement in research, it in data drive voltage the lower second grid driving voltage of on-load voltage on the grid of pixel of negative polarity signal, compared with prior art the duration of charging of proper extension negative polarity signal pixels, do not need very high gate drive voltage just to be well positioned to meet the charging requirement of negative polarity signal pixels.
The grid drive method that present embodiment provides can be applied to multiple type of drive, is described respectively below:
(1) is applied to the frame inversion driving mode
In the frame inversion driving mode, if it is positive signal that data line offers the data drive voltage of current frame pixel, then to offer the data drive voltage of next frame pixel be the negative polarity signal to data line, that is to say, for each frame image signal, the data drive voltage that data line offers pixel is all positive signal or negative polarity signal, and for continuous some frame image signals, the data drive voltage that data line provides alternately is positive signal and negative polarity signal.
If the data drive voltage of current frame pixel is a positive signal, on the grid of current frame pixel, load the first grid driving voltage, so that the current frame pixel electrode charges fully; The data drive voltage of next frame pixel is the negative polarity signal, loads the second grid driving voltage on the grid of next frame pixel, so that the next frame pixel electrode charges fully.
In the frame inversion driving mode,, satisfy the charging requirement of the pixel electrode of positive signal or negative polarity signal by the high-low pressure conversion that above-mentioned gate drive voltage carries out with the frame counter-rotating; Simultaneously, the lower second grid driving voltage of on-load voltage on the grid of the pixel of negative polarity signal, alleviation effectively TFT grid bias problem, prolonged serviceable life of TFT; Compared with prior art, the power that loading second grid driving voltage is consumed is less, the power consumption of having saved liquid crystal panel.
(2) be applied to the row inversion driving mode
Being expert in the inversion driving mode, for a certain frame image signal, is positive signal if data line offers the data drive voltage of the capable pixel of n, and then to offer the data drive voltage of the capable pixel of n+1 be the negative polarity signal to data line; For the next frame of this frame image signal, the data drive voltage that data line offers the capable pixel of n is the negative polarity signal, and the data drive voltage that data line offers the capable pixel of n+1 is a positive signal.
If the data drive voltage of certain delegation's pixel of a certain frame image signal is a positive signal, on the grid of this delegation's pixel, load the first grid driving voltage, so that this delegation's pixel electrode charges fully; The data drive voltage of next line pixel is the negative polarity signal, loads the second grid driving voltage on the grid of next line pixel, so that the next line pixel electrode charges fully.
Be expert in the inversion driving mode,, satisfy the charging requirement of the pixel electrode of positive signal or negative polarity signal by above-mentioned gate drive voltage retinue and with the high-low pressure conversion that the frame counter-rotating is carried out; Simultaneously, the lower second grid driving voltage of on-load voltage on the grid of the pixel of negative polarity signal, alleviation effectively TFT grid bias problem, prolonged serviceable life of TFT; Compared with prior art, the power that loading second grid driving voltage is consumed is less, the power consumption of having saved liquid crystal panel.
(3) be applied to 1 point (Dot) interlacing inversion driving mode
In 1 interlacing inversion driving mode, for a certain frame image signal, if it is positive signal that data line offers the data drive voltage of the capable odd column pixel of n, then to offer the data drive voltage of the capable even column pixel of n be the negative polarity signal to data line, the data drive voltage that data line offers the capable odd column pixel of n+1 is the negative polarity signal, and the data drive voltage that data line offers the capable even column pixel of n+1 is a positive signal; Next frame for this frame image signal, the data drive voltage that data line offers the capable odd column pixel of n is the negative polarity signal, the data drive voltage that data line offers the capable even column pixel of n is a positive signal, the data drive voltage that data line offers the capable odd column pixel of n+1 is a positive signal, and the data drive voltage that data line offers the capable even column pixel of n+1 is the negative polarity signal.
Otherwise, for a certain frame image signal, if it is the negative polarity signal that data line offers the data drive voltage of the capable odd column pixel of n, then to offer the data drive voltage of the capable even column pixel of n be positive signal to data line, the data drive voltage that data line offers the capable odd column pixel of n+1 is a positive signal, and the data drive voltage that data line offers the capable even column pixel of n+1 is the negative polarity signal; Next frame for this frame image signal, the data drive voltage that data line offers the capable odd column pixel of n is a positive signal, the data drive voltage that data line offers the capable even column pixel of n is the negative polarity signal, the data drive voltage that data line offers the capable odd column pixel of n+1 is the negative polarity signal, and the data drive voltage that data line offers the capable even column pixel of n+1 is a positive signal.
If the data drive voltage of a certain row pixel of certain delegation of a certain frame image signal is a positive signal, on the grid of this pixel, load the first grid driving voltage, so that this pixel electrode charges fully; If the data drive voltage of a certain row pixel of certain delegation of a certain frame image signal is the negative polarity signal, on the grid of this pixel, load the second grid driving voltage, so that this pixel electrode charges fully.
In 1 interlacing inversion driving mode, load different gate drive voltages by grid in the positive signal and the pixel of negative polarity signal, satisfy the charging requirement of the pixel electrode of positive signal or negative polarity signal; Simultaneously, the lower second grid driving voltage of on-load voltage on the grid of the pixel of negative polarity signal, alleviation effectively TFT grid bias problem, prolonged serviceable life of TFT; Compared with prior art, the power that loading second grid driving voltage is consumed is less, the power consumption of having saved liquid crystal panel.
(4) be applied to 2 point (Dot) interlacing inversion driving modes
In 2 interlacing inversion driving modes, if each row pixel is divided into a plurality of groups, each group comprises 2 adjacent pixels, for a certain frame image signal, if it is positive signal that data line offers the data drive voltage of the capable odd number group pixel of n, then to offer the data drive voltage of the capable even number set pixel of n be the negative polarity signal to data line, the data drive voltage that data line offers the capable odd number group pixel of n+1 is the negative polarity signal, and the data drive voltage that data line offers the capable even number set pixel of n+1 is a positive signal; Next frame for this frame image signal, the data drive voltage that data line offers the capable odd number group pixel of n is the negative polarity signal, the data drive voltage that data line offers the capable even number set pixel of n is a positive signal, the data drive voltage that data line offers the capable odd number group pixel of n+1 is a positive signal, and the data drive voltage that data line offers the capable even number set pixel of n+1 is the negative polarity signal.
Otherwise, for a certain frame image signal, if it is the negative polarity signal that data line offers the data drive voltage of the capable odd number group pixel of n, then to offer the data drive voltage of the capable even number set pixel of n be positive signal to data line, the data drive voltage that data line offers the capable odd number group pixel of n+1 is a positive signal, and the data drive voltage that data line offers the capable even number set pixel of n+1 is the negative polarity signal; Next frame for this frame image signal, the data drive voltage that data line offers the capable odd number group pixel of n is a positive signal, the data drive voltage that data line offers the capable even number set pixel of n is the negative polarity signal, the data drive voltage that data line offers the capable odd number group pixel of n+1 is the negative polarity signal, and the data drive voltage that data line offers the capable even number set pixel of n+1 is a positive signal.
If the data drive voltage of a certain group of pixel of certain delegation of a certain frame image signal is a positive signal, on the grid of this group pixel, load the first grid driving voltage, so that this pixel electrode charges fully; If the data drive voltage of a certain group of pixel of certain delegation of a certain frame image signal is the negative polarity signal, on the grid of this group pixel, load the second grid driving voltage, so that this pixel electrode charges fully.
In 2 interlacing inversion driving modes, load different gate drive voltages by grid in the positive signal and the pixel of negative polarity signal, satisfy the charging requirement of the pixel electrode of positive signal or negative polarity signal; Simultaneously, the lower second grid driving voltage of on-load voltage on the grid of the pixel of negative polarity signal, alleviation effectively TFT grid bias problem, prolonged serviceable life of TFT; Compared with prior art, the power that loading second grid driving voltage is consumed is less, the power consumption of having saved liquid crystal panel.
With above-mentioned 2 interlacing inversion driving modes similarly be, present embodiment also can be used for multiple spot (greater than 2 points) interlacing inversion driving mode, and wherein each row pixel is divided into a plurality of groups, and each group comprises 3 above adjacent pixels.
At above-mentioned various type of drive, the present invention also provides corresponding gate driver circuit, specifically describes as follows.
Gate driver circuit embodiment one of the present invention:
The gate driver circuit that present embodiment provides comprises a loaded circuit, this loaded circuit is used for loading the first grid driving voltage on data drive voltage is the grid of pixel of positive signal, and be to load the second grid driving voltage on the grid of pixel of negative polarity signal in data drive voltage, wherein the first grid driving voltage is higher than the second grid driving voltage.
The gate driver circuit that present embodiment provides can be applied to above-mentioned 4 kinds of type of drive, by in data drive voltage being the lower second grid driving voltage of on-load voltage on the grid of pixel of negative polarity signal, alleviate TFT grid bias problem effectively, prolonged the serviceable life of TFT; Compared with prior art, the power that loading second grid driving voltage is consumed is less, the power consumption of having saved liquid crystal panel.
Gate driver circuit embodiment two of the present invention:
Fig. 2 is the structural representation of gate driver circuit embodiment two of the present invention.As shown in Figure 2, present embodiment comprises: loaded circuit 1 and shift register 2, wherein, shift register 2 is connected with loaded circuit 1.
Loaded circuit 1 is used for loading the first grid driving voltage on data drive voltage is the grid of pixel of positive signal, and be to load the second grid driving voltage on the grid of pixel of negative polarity signal in data drive voltage, the first grid driving voltage is higher than the second grid driving voltage, and first grid driving voltage and second grid driving voltage are that the 3rd gate drive voltage that loaded circuit 1 is exported according to shift register 2 obtains.
Particularly, shift register 2 is exported to loaded circuit 1 with the 3rd gate drive voltage, and loaded circuit 1 obtains first grid driving voltage and second grid driving voltage respectively according to the 3rd gate drive voltage, is carried in respectively on the grid of respective pixel then.
Above-mentioned shift register 2 can be for providing the parts of gate drive voltage for a frame image signal one-row pixels in the existing display panels, loaded circuit 1 newly-increased in the present embodiment is connected between the grid of shift register 2 and pixel, be used for the 3rd gate drive voltage that shift register 2 provides processed and obtain first grid driving voltage and second grid driving voltage, be carried in then on the grid of respective pixel.
Gate driver circuit embodiment three of the present invention:
Fig. 3 is the structural representation of gate driver circuit embodiment three of the present invention.Fig. 3 only shows the driving circuit of the capable pixel gates of n.As shown in Figure 3, present embodiment specifically comprises: loaded circuit 10 and shift register 11, and wherein loaded circuit 10 comprises first circuit 12 and second circuit 13, wherein first circuit 12 is connected with shift register 11 respectively with second circuit 13.
Shift register 11 specifically comprises TFT switching element T 1, T2, T3 and T4, and wherein the grid of T1 is connected the output signal of the capable pixel gates driving circuit of n-1 shift register with source electrode; The source electrode of T2 is connected with the drain electrode of T1, and the grid of T2 connects the output signal of the capable pixel gates driving circuit of n+1 shift register, and the drain electrode of T2 connects low-voltage signal Vss; The grid of T3 connects the drain electrode of T1, and the source electrode of T3 connects clock signal clk 1, and the drain electrode of T3 is used to export the output signal of the capable pixel gates driving circuit of n shift register 11; The source electrode of T4 connects the drain electrode of T3, and the grid of T4 connects the output signal of the capable pixel gates driving circuit of n+1 shift register, and the drain electrode of T4 connects low-voltage signal Vss.
The basic functional principle of above-mentioned shift register 11 is: when the output signal of the capable pixel gates driving circuit of n-1 shift register is high-voltage signal, flip-flop shift 11 output CLK1, when the output signal of the capable pixel gates driving circuit of n+1 shift register is high-voltage signal, flip-flop shift 11 output low-voltage signals.Particularly, when the grid of T1 received high-voltage signal, T1 opened, T1 outputs to the grid of T3 with high-voltage signal, and T3 opens, and T3 exports CLK1, when CLK1 was the cut-in voltage of the capable pixel of n, T3 was with the gate drive voltage output of this cut-in voltage as the capable pixel of n; When the grid of T2 and T4 received high-voltage signal, T2 and T4 opened, and T2 outputs to the grid of T3 with Vss, and T3 closes, and T4 exports Vss, made shift register 11 output low-voltage signals, also promptly stopped to export the gate drive voltage of the capable pixel of n.
See Fig. 3, first circuit, 12 1 ends connect first clock signal clk 2, first circuit 12 is used for when CLK2 is unblocked level, be to load the first grid driving voltage on the grid of pixel of positive signal in data drive voltage, to be first circuit 12 obtain according to the 3rd gate drive voltage of shift register 11 outputs the first grid driving voltage.As a kind of preferred implementation, first circuit 12 can comprise a TFT switching device A1, breadth length ratio (the Width/Length of A1, be called for short: W/L) relatively large, it can be with the output of input signal near-complete, that is to say that when the input signal of A1 was the 3rd gate drive voltage, the first grid driving voltage of A1 output was close with the 3rd gate drive voltage or equate.Particularly, the grid of A1 connects first clock signal clk 2, and the drain electrode of A1 connects shift register 11, specifically connects the drain electrode of T3, the source electrode output first grid driving voltage of A1.When first clock signal clk 2 for data drive voltage is the cut-in voltage of the capable pixel of n of positive signal, A1 opens, and A1 will be close with the 3rd gate drive voltage of T3 output or the complete grid of exporting to the capable pixel of this n of first grid driving voltage that equates.
See Fig. 3, second circuit 13 1 ends connect second clock signal CLK3, second circuit 13 is used for when CLK3 is unblocked level, be to load the second grid driving voltage on the grid of pixel of negative polarity signal in data drive voltage, to be second circuit 13 obtain according to the 3rd gate drive voltage of shift register 11 outputs the second grid driving voltage.As a kind of preferred implementation, second circuit 13 can comprise the 2nd TFT switching device A2, the W/L of A2 is less relatively, the W/L of A2 is less than A1, it can reduce higher applied signal voltage back output, that is to say, when the input signal of A2 is the 3rd gate drive voltage, the second grid driving voltage of A2 output is less than the 3rd gate drive voltage, and the second grid driving voltage is also just less than the first grid driving voltage like this.Particularly, the grid of A2 connects second clock signal CLK3, and the drain electrode of A2 connects shift register 11, specifically connects the drain electrode of T3, the source electrode output first grid driving voltage of A2.When second clock signal CLK3 is a data drive voltage when being the cut-in voltage of the capable pixel of n of negative polarity signal, A2 reduces the back with the 3rd gate drive voltage of T3 output and obtains the grid that the second grid driving voltage is exported to the capable pixel of this n.
First circuit and second circuit are not limited only to the switching device into TFT in the gate driver circuit provided by the invention; other devices that can realize above-mentioned functions all belong to invention which is intended to be protected; for example first circuit and second circuit can be the circuit of resistance formation; the resistance value of first circuit can be provided with very little; make the first grid driving voltage be slightly less than the 3rd gate drive voltage; the resistance value setting of second circuit is bigger, makes the second grid driving voltage much smaller than the 3rd gate drive voltage.
Further, present embodiment can also comprise the 7th TFT switching element T 7, the grid of T7 connects the output terminal of n+1 capable (being next line) pixel gates driving circuit shift register, and the drain electrode of T7 connects low-voltage signal Vss, and the source electrode of T7 connects the source electrode of A1 and A2 respectively.When the grid of T7 received high-voltage signal, T7 opened, and T7 exports Vss, made A1 and A2 export low-voltage signal, also promptly stopped to export the gate drive voltage of the capable pixel of n.
The gate driver circuit that present embodiment provides can be used for frame inversion driving mode and row inversion driving mode, the grid line of each row pixel of display panels all is connected with a gate driver circuit shown in Figure 3, and two output lines of gate driver circuit shown in Figure 3 all are connected on the same grid line.Above-mentioned first clock signal clk 2 and second clock signal CLK3 are along with being that unit counter-rotating alternately is a unblocked level with at least one frame, when being used for frame inversion driving mode and row inversion driving mode, first clock signal clk 2 and second clock signal CLK3 alternately provide unblocked level with the counter-rotating of frame.
Gate driver circuit embodiment four of the present invention:
Fig. 4 is the structural representation of gate driver circuit embodiment four of the present invention.Fig. 4 only shows the driving circuit of the capable pixel gates of n.As shown in Figure 4, present embodiment specifically comprises: loaded circuit 20 and shift register 11, wherein loaded circuit 20 comprises tertiary circuit 21, the 4th circuit 22, the 5th circuit 23 and the 6th circuit 24, and wherein tertiary circuit 21, the 4th circuit 22, the 5th circuit 23 are connected with shift register 11 respectively with the 6th circuit 24.
Wherein the structure of shift register 11 is identical with embodiment three with principle of work, does not repeat them here.
See Fig. 4, one end of tertiary circuit 21 1 ends and the 4th circuit 22 all is connected the 3rd clock signal clk 4, tertiary circuit 21 is used for when CLK4 is unblocked level, be to load the first grid driving voltage on the grid of pixel of positive signal in data drive voltage, to be tertiary circuit 21 obtain according to the 3rd gate drive voltage of shift register 11 outputs the first grid driving voltage; The 4th circuit 22 is used for when CLK4 is unblocked level, be to load the second grid driving voltage on the grid of pixel of negative polarity signal in data drive voltage, to be the 4th circuit 22 obtain according to the 3rd gate drive voltage of shift register 11 outputs the second grid driving voltage.As a kind of preferred implementation, tertiary circuit 21 comprises the 3rd TFT switching device A3, and the 4th circuit 22 comprises the 4th TFT switching device A4, and the W/L of A3 is greater than A4.The W/L of A3 is relatively large, it can be with the output of input signal near-complete, the W/L of A4 is less relatively, it can reduce higher applied signal voltage back output, that is to say that when the input signal of A3 and A4 was the 3rd gate drive voltage, the first grid driving voltage of A3 output was close with the 3rd gate drive voltage or equate, the second grid driving voltage of A4 output is less than the 3rd gate drive voltage, and the second grid driving voltage is also just less than the first grid driving voltage like this.Particularly, the grid of A3 and A4 is connected the 3rd clock signal clk 4, and the drain electrode of A3 and A4 is connected shift register 11, specifically connects the drain electrode of T3, the source electrode output first grid driving voltage of A3, the source electrode output second grid driving voltage of A4.When the 3rd clock signal clk 4 is the cut-in voltage of the capable pixel of n frame n, A3 and A4 open, A3 will be close with the 3rd gate drive voltage of T3 output or the complete grid of exporting to the capable one part of pixel of n frame n of first grid driving voltage that equates, the data drive voltage of this one part of pixel is a positive signal, A4 reduces the grid that back acquisition second grid driving voltage is exported to the capable another part pixel of n frame n with the 3rd gate drive voltage of T3 output, and the data drive voltage of this another part pixel is the negative polarity signal.
See Fig. 4, one end of the 5th circuit 23 1 ends and the 6th circuit 24 all is connected the 4th clock signal clk 5, the 5th circuit 23 is used for when CLK5 is unblocked level, be to load the second grid driving voltage on the grid of pixel of negative polarity signal in data drive voltage, to be the 5th circuit 23 obtain according to the 3rd gate drive voltage of shift register 11 outputs the second grid driving voltage; The 6th circuit 24 is used for when CLK5 is unblocked level, be to load the first grid driving voltage on the grid of pixel of positive signal in data drive voltage, to be the 6th circuit 24 obtain according to the 3rd gate drive voltage of shift register 11 outputs the first grid driving voltage.As a kind of preferred implementation, the 5th circuit 23 comprises the 5th TFT switching device A5, and the 6th circuit 24 comprises the 6th TFT switching device A6, and the W/L of A6 is greater than A5.The W/L of A5 is less relatively, it can reduce higher applied signal voltage back output, the W/L of A6 is relatively large, it can be with the output of input signal near-complete, that is to say that when the input signal of A5 and A6 was the 3rd gate drive voltage, the second grid driving voltage of A5 output was less than the 3rd gate drive voltage, the first grid driving voltage of A6 output is close with the 3rd gate drive voltage or equate that the second grid driving voltage is also just less than the first grid driving voltage like this.Particularly, the grid of A5 and A6 is connected the 4th clock signal clk 5, and the drain electrode of A5 and A6 is connected shift register 11, specifically connects the drain electrode of T3, the source electrode output second grid driving voltage of A5, the source electrode output first grid driving voltage of A6.When the 4th clock signal clk 5 is the cut-in voltage of the capable pixel of n+1 frame n, A5 and A6 open, A5 reduces the grid that back acquisition second grid driving voltage is exported to the capable one part of pixel of n+1 frame n with the 3rd gate drive voltage of T3 output, the data drive voltage of this one part of pixel is the negative polarity signal, A6 will be close with the 3rd gate drive voltage of T3 output or the complete grid of exporting to the capable another part pixel of n+1 frame n of first grid driving voltage that equates, and the data drive voltage of this another part pixel is a positive signal.
Tertiary circuit, the 4th circuit, the 5th circuit and the 6th circuit are not limited only to the switching device into TFT in the gate driver circuit provided by the invention; other devices that can realize above-mentioned functions all belong to invention which is intended to be protected; for example they can be the circuit of resistance formation; the resistance value of tertiary circuit and the 6th circuit can be provided with very little; make the first grid driving voltage be slightly less than the 3rd gate drive voltage; the resistance value setting of the 4th circuit and the 5th circuit is bigger, makes the second grid driving voltage much smaller than the 3rd gate drive voltage.
In the present embodiment, the annexation of TFT switching element T 7 is identical with embodiment three with working method.
The gate driver circuit that present embodiment provides can be used for 1 interlacing inversion driving mode and 2 interlacing inversion driving modes, the grid line of each row pixel of display panels all is connected with a gate driver circuit shown in Figure 4, and two output lines of gate driver circuit shown in Figure 4 are connected on the different grid lines with delegation's pixel.Above-mentioned the 3rd clock signal clk 4 and the 4th clock signal clk 5 are along with being that unit counter-rotating alternately is a unblocked level with at least one frame, when being used for 1 interlacing inversion driving mode and 2 interlacing inversion driving modes, the 3rd clock signal clk 4 and the 4th clock signal clk 5 alternately provide unblocked level with the counter-rotating of frame.
For above-mentioned 1 interlacing inversion driving mode and 2 interlacing inversion driving modes, data drive voltage with one part of pixel in delegation's pixel is a positive signal, the data drive voltage of another part pixel is the negative polarity signal, at these characteristics, the present invention also provides a kind of dot structure, comprise one-row pixels and two signal lines that are used to drive one-row pixels at least, two signal lines are respectively applied for and load first grid driving voltage and second grid driving voltage.The signal line that wherein loads the first grid driving voltage is used for driving the pixel that the one-row pixels data drive voltage is a positive signal; The signal line that loads the second grid driving voltage is used for driving the pixel that the one-row pixels data drive voltage is the negative polarity signal.At different type of drive, introduce corresponding dot structure respectively in detail below.
Dot structure embodiment one of the present invention:
Fig. 5 is the structural representation of dot structure embodiment one of the present invention.This dot structure is corresponding to 1 interlacing inversion driving mode, only show two row pixels among Fig. 5, for each row pixel, if it comprises a plurality of groups, each group comprises a pixel, article two, the signal line is respectively signal line 41 and signal line 42, and the data drive voltage that signal line 41 is used for driving one-row pixels is the pixel 43 of positive signal, and the data drive voltage that signal line 42 is used for driving one-row pixels is the pixel 44 of negative polarity signal.
For the row of first among Fig. 5 pixel, the data drive voltage of current time pixel 43 is positive signal (representing with "+" among the figure), and what signal line 41 loaded is the first grid driving voltage; The data drive voltage of pixel 44 is negative polarity signal (representing with "-" among the figure), and what signal line 42 loaded is the second grid driving voltage, and wherein the first grid driving voltage is higher than the second grid driving voltage.
The gate driver circuit that the dot structure of present embodiment can adopt Fig. 4 to provide, particularly, the signal line 41 and 42 in two output lines difference connection layout 5 among Fig. 4.
Present embodiment drives one-row pixels with two signal lines, can on the grid of the positive signal and the pixel of negative polarity signal, load different gate drive voltages, the lower second grid driving voltage of on-load voltage on the grid of the pixel of negative polarity signal particularly, alleviation effectively TFT grid bias problem, prolonged serviceable life of TFT; Compared with prior art, the power that loading second grid driving voltage is consumed is less, the power consumption of having saved liquid crystal panel.
Fig. 6 is the structural representation of dot structure embodiment two of the present invention.This dot structure is corresponding to 2 interlacing inversion driving modes, only show two row pixels among Fig. 6, for each row pixel, if it comprises a plurality of groups, each group comprises 2 adjacent pixels, article two, the signal line is respectively signal line 51 and signal line 52, and the data drive voltage that signal line 51 is used for driving one-row pixels is the pixel 53 of positive signal, and the data drive voltage that signal line 52 is used for driving one-row pixels is the pixel 54 of negative polarity signal.
For the row of first among Fig. 6 pixel, the data drive voltage of current time pixel 53 is positive signal (representing with "+" among the figure), and what signal line 51 loaded is the first grid driving voltage; The data drive voltage of pixel 54 is negative polarity signal (representing with "-" among the figure), and what signal line 52 loaded is the second grid driving voltage, and wherein the first grid driving voltage is higher than the second grid driving voltage.
A signal line in the present embodiment in two signal lines is used for driving the odd number group pixel of one-row pixels, and another signal line is used for driving the even number set pixel of one-row pixels.
The gate driver circuit that the dot structure of present embodiment can adopt Fig. 4 to provide, particularly, the signal line 51 and 52 in two output lines difference connection layout 6 among Fig. 4.
Present embodiment drives one-row pixels with two signal lines, can on the grid of the positive signal and the pixel of negative polarity signal, load different gate drive voltages, the lower second grid driving voltage of on-load voltage on the grid of the pixel of negative polarity signal particularly, alleviation effectively TFT grid bias problem, prolonged serviceable life of TFT; Compared with prior art, the power that loading second grid driving voltage is consumed is less, the power consumption of having saved liquid crystal panel.
The present invention can also be provided for the dot structure of multiple spot (greater than 2 points) interlacing inversion driving mode, and wherein each row pixel is divided into a plurality of groups, is that with the foregoing description difference each group comprises 3 above adjacent pixels.
One of ordinary skill in the art will appreciate that: all or part of step that realizes said method embodiment can be finished by the relevant hardware of programmed instruction, aforesaid program can be stored in the computer read/write memory medium, this program is when carrying out, execution comprises the step of said method embodiment, and aforesaid storage medium comprises: various media that can be program code stored such as ROM, RAM, magnetic disc or CD.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.

Claims (10)

1. a grid drive method is characterized in that, comprising:
Be to load the first grid driving voltage on the grid of pixel of positive signal in data drive voltage, be to load the second grid driving voltage on the grid of pixel of negative polarity signal in data drive voltage, described first grid driving voltage is higher than described second grid driving voltage.
2. gate driver circuit, it is characterized in that, comprise: loaded circuit is used for loading the first grid driving voltage on data drive voltage is the grid of pixel of positive signal, and is to load the second grid driving voltage on the grid of pixel of negative polarity signal in data drive voltage;
Described first grid driving voltage is higher than described second grid driving voltage.
3. gate driver circuit according to claim 2 is characterized in that, also comprises: shift register, and described shift register is connected with described loaded circuit;
Described first grid driving voltage and described second grid driving voltage are that the 3rd gate drive voltage that described loaded circuit is exported according to described shift register obtains.
4. according to claim 2 or 3 described gate driver circuits, it is characterized in that described loaded circuit comprises:
First circuit is used for when first clock signal is unblocked level, in data drive voltage is to load the first grid driving voltage on the grid of pixel of positive signal;
Second circuit is used for when the second clock signal is unblocked level, in data drive voltage is to load the second grid driving voltage on the grid of pixel of negative polarity signal;
Described first clock signal and described second clock signal are along with being that unit counter-rotating alternately is a unblocked level with at least one frame.
5. gate driver circuit according to claim 4, it is characterized in that, described first circuit comprises a TFT switching device, and described second circuit comprises the 2nd TFT switching device, and the breadth length ratio of a described TFT switching device is greater than described the 2nd TFT switching device;
The grid of a described TFT switching device connects described first clock signal, and the drain electrode of a described TFT switching device connects shift register, and the source electrode of a described TFT switching device is exported described first grid driving voltage;
The grid of described the 2nd TFT switching device connects described second clock signal, and the drain electrode of described the 2nd TFT switching device connects shift register, and the source electrode of described the 2nd TFT switching device is exported described second grid driving voltage.
6. gate driver circuit according to claim 5 is characterized in that, described loaded circuit also comprises the 7th TFT switching device;
The grid of described the 7th TFT switching device connects the output terminal of the shift register of next line pixel, the drain electrode of described the 7th TFT switching device connects low-voltage signal, and the source electrode of described the 7th TFT switching device connects the source electrode of a described TFT switching device and the source electrode of described the 2nd TFT switching device.
7. according to claim 2 or 3 described gate driver circuits, it is characterized in that described loaded circuit comprises:
Tertiary circuit is used for when the 3rd clock signal is unblocked level, in data drive voltage is to load the first grid driving voltage on the grid of pixel of positive signal;
The 4th circuit is used for when the 3rd clock signal is unblocked level, in data drive voltage is to load the second grid driving voltage on the grid of pixel of negative polarity signal;
The 5th circuit is used for when the 4th clock signal is unblocked level, in data drive voltage is to load the second grid driving voltage on the grid of pixel of negative polarity signal;
The 6th circuit is used for when the 4th clock signal is unblocked level, in data drive voltage is to load the first grid driving voltage on the grid of pixel of positive signal;
Described the 3rd clock signal and described the 4th clock signal are along with being that unit counter-rotating alternately is a unblocked level with at least one frame.
8. gate driver circuit according to claim 7, it is characterized in that, described tertiary circuit comprises the 3rd TFT switching device, described the 4th circuit comprises the 4th TFT switching device, described the 5th circuit comprises the 5th TFT switching device, described the 6th circuit comprises the 6th TFT switching device, and the breadth length ratio of described the 3rd TFT switching device is greater than described the 4th TFT switching device, and the breadth length ratio of described the 6th TFT switching device is greater than described the 5th TFT switching device;
The grid of described the 3rd TFT switching device connects described the 3rd clock signal, and the drain electrode of described the 3rd TFT switching device connects shift register, and the source electrode of described the 3rd TFT switching device is exported described first grid driving voltage;
The grid of described the 4th TFT switching device connects described the 3rd clock signal, and the drain electrode of described the 4th TFT switching device connects shift register, and the source electrode of described the 4th TFT switching device is exported described second grid driving voltage;
The grid of described the 5th TFT switching device connects described the 4th clock signal, and the drain electrode of described the 5th TFT switching device connects shift register, and the source electrode of described the 5th TFT switching device is exported described second grid driving voltage;
The grid of described the 6th TFT switching device connects described the 4th clock signal, and the drain electrode of described the 6th TFT switching device connects shift register, and the source electrode of described the 6th TFT switching device is exported described first grid driving voltage.
9. a dot structure comprises one-row pixels at least, it is characterized in that, also comprises: two signal lines that are used to drive described one-row pixels; Described two signal lines are respectively applied for and load first grid driving voltage and second grid driving voltage, and described first grid driving voltage is higher than described second grid driving voltage;
The pixel that it is positive signal that the signal line that wherein loads the first grid driving voltage is used for driving described one-row pixels data drive voltage; The signal line that loads the second grid driving voltage is used for driving described one-row pixels data drive voltage the pixel that is the negative polarity signal.
10. dot structure according to claim 9 is characterized in that: described one-row pixels comprises a plurality of groups, and one group of pixel comprises 1 pixel at least; Article one, the signal line is used for driving the odd number group pixel of described one-row pixels, and another signal line is used for driving the even number set pixel of described one-row pixels.
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CN109584837A (en) * 2019-01-30 2019-04-05 惠科股份有限公司 The driving method and display equipment of display panel
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