CN102214736A - Method for manufacturing photoelectric device - Google Patents
Method for manufacturing photoelectric device Download PDFInfo
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- CN102214736A CN102214736A CN201110157658XA CN201110157658A CN102214736A CN 102214736 A CN102214736 A CN 102214736A CN 201110157658X A CN201110157658X A CN 201110157658XA CN 201110157658 A CN201110157658 A CN 201110157658A CN 102214736 A CN102214736 A CN 102214736A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a method for manufacturing a photoelectric device, and is characterized in that devices with the same functions on a production line are centralized to form a specific function device zone; and others devices surround the device zone to carry out process connection. The method is utilized to improve the consistency of device processes on the production line for producing the photoelectric devices on a large scale and product performances, and improve the production efficiency and product yield.
Description
Technical field
The present invention relates to photoelectric device manufacturing technology field, particularly relate to a kind of manufacture method of photoelectric device.
Background technology
Photoelectric device has a wide range of applications in daily life, the photovoltaic device of the photoelectric effect work that photoelectric device mainly comprises the photoconductive device that utilizes the photosensitive characteristic work of semiconductor, utilize semiconductor or organic material and utilize semiconductive thin film triode (TFT) to regulate or drive display device of all kinds of material optical properties etc.Semiconductor photoelectric device comprises light-emitting diode (LED), phototransistor, TFT-LCD liquid crystal display device, LED flat-panel display device etc., also has the wide temperature LCDs of AMLCD in addition, is active-matrix (Active Matrix) LCD again.Semiconductor photovoltaic device comprises monocrystalline silicon, polysilicon, silicon-based film solar cells, CIGS hull cell etc.Continuous increase along with energy resource consumption, main source as the energy, the CO2 emission that a large amount of use caused of oil and coal is pollution of ecological environment seriously, and oil and coal resources also face exhausted condition, therefore, seek low-carbon emission and inexhaustible regenerative resource becomes more and more urgent, and a kind of so just inexhaustible renewable new forms of energy of solar energy.People pay attention to day by day to the development and utilization based on the solar cell of photovoltaic effect, and market is to more large tracts of land, the demand lighter and thinner and novel solar battery that production cost is lower increase day by day.In these novel solar batteries, characteristics such as few with the silicon amount with it based on alloy firm (for example amorphous silicon a-Si:H) solar cell of silicon materials, low-cost and high volume production become a new trend of solar cell development.
Solar energy industry if want can with traditional fossil fuel energy competition, must increase substantially output and reduce production costs.The production concept of pipeline system, promptly solar components finally becomes product through the processing of every equipment successively along same direction, is used widely in the production of Thinfilm solar cell assembly to reach the maximum of output.Other photoelectric device, LED for example is applicable to the mode of production of this pipeline system too.Yet the device height of the every platform independent of pipeline system production requirement is reliable and require the single products production time (producing every product required time) short as far as possible, and the production time is coupling as far as possible.The designing to be in all battery modules or other photovoltaic of this way flow line type all forms via same equipment and series production.Production line upper module power descends or the yield suppression ratio is easier to find related process or the equipment that causes its decline.
The manufacturing of photoelectric device mostly will could form final product through technologies such as the deposition of one or many, photoetching, etchings.The arrangement of equipment and layout also are to arrange successively by the product trend, notion according to production line, will be through repeatedly photoetching, etching, a plurality of lithographic equipments can be arranged in the diverse location of production line, will certainly make troubles to the maintenance of the equipment of carrying out same technology, the process conditions of equipment also are unfavorable for keeping, and production consistency of product and yield can be affected.
Summary of the invention
The invention provides a kind of manufacture method of photoelectric device, can improve the apparatus for production line process consistency and the properties of product of large-scale production photoelectric device, enhance productivity and the product yield.
The manufacture method of a kind of photoelectric device of the present invention, the equipment group that the function on the production line is identical concentrate in together forms the specific functional devices district, and miscellaneous equipment carries out technology and connects around described battery limits.
Described equipment photoelectric device comprises solar cell and light-emitting diode.
Described battery limits comprise and produce the required suitable a plurality of equipment groups of technological requirement of photoelectric device.
The equipment that described function is identical comprises lithographic equipment or laser scribing equipment.
Described equipment group comprises whirl coating equipment, exposure sources, development and fixation facility.
Described equipment group comprises red laser scribing equipment and green laser scribing equipment.
Equipment outside the described battery limits is finished before the described function performing step and processing step afterwards.
Equipment in the described battery limits or equipment group are finished and are made the same or analogous processing step that described photoelectric device will repeat.
After equipment outside the described battery limits is finished corresponding operation to photovoltaic, described product enters described battery limits, after finishing corresponding operation by equipment or equipment group, product shifts out described battery limits, finishes processing step after the technology of functional areas by the equipment outside the battery limits again.
Form series relationship with outer equipment according to technological requirement in the described battery limits.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present invention.
Fig. 1 is the technological process of production figure of example for the production with amorphous silicon thin-film solar cell;
Fig. 2 is the technological process of production figure based on the light-emitting diode of GaN;
Fig. 3 is a light-emitting diode production line schematic diagram;
Fig. 4 is the equipment group schematic diagram of Fig. 3;
Fig. 5 is that the production line flow process according to the inventive method concerns schematic diagram.
Fig. 6 is that the production line flow process according to the inventive method first embodiment concerns schematic diagram;
Fig. 7 is that the product line group flow process according to another embodiment of the inventive method concerns schematic diagram.
Described diagrammatic sketch is illustrative, and nonrestrictive, can not excessively limit protection scope of the present invention at this.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public specific embodiment.
Production with amorphous silicon thin-film solar cell is that example describes method of the present invention below.The production line of amorphous silicon thin-film solar cell mainly comprises following equipment: electro-conductive glass edger unit, electro-conductive glass cleaning equipment, large-scale amorphous silicon membrane PECVD equipment (comprising auxiliary equipment), infrared laser, green laser scoring equipment, large-scale magnetron sputtering production equipment, component testing equipment etc.Its process chart as shown in Figure 1, comprise nesa coating (SnO2:F-TCO) glass edging cleaning, infrared laser TCO cutting, PECVD amorphous silicon film layer deposition, the cutting of green laser amorphous silicon film layer, magnetron sputtering PVD plating AZO-aluminum back electrode film, the cutting of green laser back electrode, laser edge flash trimming, test-annealing-electrical method reparation, the ultra-sonic welded aluminium foil band that confluxes, back of the body glass grinding out cleans, and encapsulation-mounting terminal box-finished product test sorts.
Fig. 2 is the technological process of production figure based on the light-emitting diode of GaN.As shown in Figure 2, the production procedure of LED comprises provides the sapphire substrate substrate, makes epitaxial wafer (utilizing MOCVD process deposits GaN rete) then, and the input chip production line (comprises deposition ITO or SiO through several mask technology then
2, technologies such as photoetching, etching) metal deposition forms electrode, through rubbing down, attenuate, cut into slices at last and detect/classify.Fig. 3 is a light-emitting diode production line schematic diagram, as shown in Figure 3, per pass technology and operation are all finished by corresponding apparatus, for example the extension operation is finished by the MOCVD depositing device, depositing operation is finished by depositing device, mask technology is finished by lithographic equipment equipment such as (photoresist spinner, exposure machine, developing apparatus, fixation facilities), and etching technics is finished by the etching machine, or the like.In the production process of LED, to finish the manufacturing of electrode through 3 to 5 road mask technologies usually.Photoetching process just needs at least 3 mask equipment groups so, and these equipment groups normally are arranged in the different position of production line by the sequencing of technology, finish successively and respectively go on foot photo-mask process.Fig. 4 is the equipment group schematic diagram of Fig. 3, as shown in Figure 4, in this example, lithographic equipment comprises three groups of mask equipment groups, be mask equipment group 31, mask equipment group 32 and mask equipment group 33, they comprise whirl coating equipment 311,321,331 respectively, mask aligner 312,322,332, visualizer 313,323,333 and photographic fixing instrument 314,324,334.Here only illustrate, mask equipment group also may be the equipment combination of other form.Mask equipment group 31 finish photoetching respectively go on foot operation after, through etching, expose required part, and then the material layer that needs of deposition (for example ITO, SiO
2Deng), enter next photo-mask process again, finish each operation of next photoetching process by mask equipment group 32; After etching and deposition, enter next photo-mask process again, finish each operation of next photoetching process by mask equipment group 33 again.Mask equipment group 31, mask equipment group 32 and mask equipment group 33 are carried out same technology, are finished same function, but they spatially are the diverse location that is arranged in production line usually, be unfavorable for so on the one hand safeguarding, be unfavorable for keeping the stability of equipment state and the stability of technology on the other hand.Because the equipment of said function, its maintenance condition, operational environment, state of the art should be basic identical, but be in different positions, and equipment state is unfavorable for safeguarding that maintenance efficiency reduces.If use same group for photo etching (gold-tinted) equipment to finish different lithography steps, certainly will to change different mask so, so greatly reduced production efficiency.
Fig. 5 is that the production line flow process according to the inventive method concerns schematic diagram.Method of the present invention is that the equipment that the function on the production line is identical concentrates in together composition specific functional devices district, and miscellaneous equipment carries out technology and connects around described battery limits.For example, just concentrate in together and form lithographic equipment district 100 with the relevant equipment of mask (mask) with all photoetching processes.These battery limits comprise and produce the required suitable a plurality of equipment groups of technological requirement of photoelectric device, finish and make the same or analogous processing step that described photoelectric device will repeat, and comprise mask1, mask2, mask3 ... maskn etc.Described battery limits 100 outer equipment are finished before the described processing step and processing step afterwards, for example mask1 preceding road technology and mask1 postchannel process etc.Be after described functional areas 100 outer equipment are finished corresponding operation (preceding road technology) to photovoltaic, described product enters described functional areas 100, after finishing corresponding operation by mask equipment or equipment group, product shifts out described functional areas 100, is finished the processing step of (postchannel process) after the operation of functional areas again by the equipment outside the functional areas.Form series relationship with outer equipment according to technological requirement in the described functional areas 100.
Fig. 6 is that the production line flow process according to the inventive method first embodiment concerns schematic diagram.As shown in Figure 6, present embodiment is the manufacture process according to LED, and mask31 equipment group, mask32 equipment group, the mask33 equipment group of carrying out the multiple tracks photoetching process concentrated in the photoetching functional areas 100.At first MOCVD deposits after each rete of GaN, deposit transparent conductive layer ITO, and product enters functional areas 100 then, carry out photoetching process by mask equipment group 31, finish photoetching through equipment 311,312,313,314, product shifts out functional areas 100, carry out etching by etching apparatus, expose electrode district; Product enters functional areas 100 more afterwards, carry out following one photoetching process by mask equipment group 32, finish photoetching through equipment 321,322,323,324, product shifts out functional areas 100, by depositing device plated metal pad layer, carry out metal level then and peel off (metal lift--off).Deposit SiO again
2Layer, product enters functional areas 100 once more afterwards, carries out following one photoetching process by mask equipment group 33, after equipment 331,332,333,334 is finished photoetching, product shifts out functional areas 100, carries out etching by etching apparatus and forms electrode, finishes manufacturing after section.Above-mentioned processing step is an embodiment of LED manufacture process, does not comprise careful processing step, only is for core concept of the present invention is described.
Fig. 7 is that the product line group flow process according to another embodiment of the inventive method concerns schematic diagram.Present embodiment is the manufacture process according to thin-film solar cells, and red laser scribing equipment and the green laser scribing equipment of carrying out multiple tracks laser scribing is concentrated in the laser scribing district 200.Product enters laser scribing district 200 and carries out infrared laser TCO cutting after the deposit transparent conductive oxide layer TCO; Shift out laser scribing district 200 afterwards and carry out each floor of PECVD deposition of amorphous silicon, and then enter laser scribing district 200 and carry out the cutting of green laser amorphous silicon film layer; Shift out laser scribing district 200 then and carry out the back electrode metal deposition, enter the 200 green laser back electrode cuttings of laser scribing district again.
The equipment that the apparatus for production line arrangement mode of this intensification of the present invention is identical or close with function concentrates in together, the operational environment of equipment and process conditions (for example cleanliness factor and vacuum degree require) are easy to keep and safeguard, be convenient to management, improved maintenance efficiency, also can improve simultaneously technology unanimity degree, improve consistency of product and stability.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art are not breaking away under the technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the protection range of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (10)
1. the manufacture method of a photoelectric device is characterized in that: the equipment group that the function on the production line is identical concentrates in together forms the specific functional devices district, and miscellaneous equipment carries out technology and connects around described battery limits.
2. method according to claim 1 is characterized in that: described equipment photoelectric device comprises solar cell and light-emitting diode.
3. method according to claim 3 is characterized in that: described battery limits comprise and produce the required suitable a plurality of equipment groups of technological requirement of photoelectric device.
4. method according to claim 1 is characterized in that: the equipment that described function is identical comprises lithographic equipment or laser scribing equipment.
5. method according to claim 4 is characterized in that: described equipment group comprises whirl coating equipment, exposure sources, development and fixation facility.
6. method according to claim 4 is characterized in that: described equipment group comprises red laser scribing equipment and green laser scribing equipment.
7. method according to claim 1 is characterized in that: the equipment outside the described battery limits is finished before the described function performing step and processing step afterwards.
8. method according to claim 1 is characterized in that: equipment in the described battery limits or equipment group are finished and are made the same or analogous processing step that described photoelectric device will repeat.
9. method according to claim 7, it is characterized in that: after the equipment outside the described battery limits is finished corresponding operation to photovoltaic, described product enters described battery limits, after finishing corresponding operation by equipment or equipment group, product shifts out described battery limits, finishes functional areas technology processing step afterwards by the equipment outside the battery limits again.
10. method according to claim 9 is characterized in that: form series relationship with outer equipment according to technological requirement in the described battery limits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110157658XA CN102214736A (en) | 2011-06-14 | 2011-06-14 | Method for manufacturing photoelectric device |
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| CN201110157658XA CN102214736A (en) | 2011-06-14 | 2011-06-14 | Method for manufacturing photoelectric device |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1164757A (en) * | 1996-05-08 | 1997-11-12 | 财团法人工业技术研究院 | Semiconductor modular making unit system |
| CN201294230Y (en) * | 2008-11-06 | 2009-08-19 | 常州天合光能有限公司 | Solar vertical integration production configuration structure |
| US20100047954A1 (en) * | 2007-08-31 | 2010-02-25 | Su Tzay-Fa Jeff | Photovoltaic production line |
| CN201466049U (en) * | 2009-06-22 | 2010-05-12 | 北京京运通科技股份有限公司 | Circulating production line for preparing thin-film photovoltaic batteries |
| CN101950776A (en) * | 2010-09-01 | 2011-01-19 | 福建铂阳精工设备有限公司 | Method for improving productivity and yield of solar battery packs |
| JP2011218772A (en) * | 2010-03-23 | 2011-11-04 | Fuji Xerox Co Ltd | Light emitting device, method of driving the same, print head, and image forming apparatus |
-
2011
- 2011-06-14 CN CN201110157658XA patent/CN102214736A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1164757A (en) * | 1996-05-08 | 1997-11-12 | 财团法人工业技术研究院 | Semiconductor modular making unit system |
| US20100047954A1 (en) * | 2007-08-31 | 2010-02-25 | Su Tzay-Fa Jeff | Photovoltaic production line |
| CN201294230Y (en) * | 2008-11-06 | 2009-08-19 | 常州天合光能有限公司 | Solar vertical integration production configuration structure |
| CN201466049U (en) * | 2009-06-22 | 2010-05-12 | 北京京运通科技股份有限公司 | Circulating production line for preparing thin-film photovoltaic batteries |
| JP2011218772A (en) * | 2010-03-23 | 2011-11-04 | Fuji Xerox Co Ltd | Light emitting device, method of driving the same, print head, and image forming apparatus |
| CN101950776A (en) * | 2010-09-01 | 2011-01-19 | 福建铂阳精工设备有限公司 | Method for improving productivity and yield of solar battery packs |
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